TWI540612B - An exposure apparatus, an exposure method, and an element manufacturing method - Google Patents

An exposure apparatus, an exposure method, and an element manufacturing method Download PDF

Info

Publication number
TWI540612B
TWI540612B TW102123163A TW102123163A TWI540612B TW I540612 B TWI540612 B TW I540612B TW 102123163 A TW102123163 A TW 102123163A TW 102123163 A TW102123163 A TW 102123163A TW I540612 B TWI540612 B TW I540612B
Authority
TW
Taiwan
Prior art keywords
substrate
exposure
optical system
projection optical
stations
Prior art date
Application number
TW102123163A
Other languages
English (en)
Chinese (zh)
Other versions
TW201342428A (zh
Inventor
蛯原明光
Original Assignee
尼康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 尼康股份有限公司 filed Critical 尼康股份有限公司
Publication of TW201342428A publication Critical patent/TW201342428A/zh
Application granted granted Critical
Publication of TWI540612B publication Critical patent/TWI540612B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70816—Bearings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
  • Glass Compositions (AREA)
  • Magnetic Bearings And Hydrostatic Bearings (AREA)
  • Microscoopes, Condenser (AREA)
  • Magnetic Heads (AREA)
TW102123163A 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method TWI540612B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003174259 2003-06-19

Publications (2)

Publication Number Publication Date
TW201342428A TW201342428A (zh) 2013-10-16
TWI540612B true TWI540612B (zh) 2016-07-01

Family

ID=33534785

Family Applications (15)

Application Number Title Priority Date Filing Date
TW102123163A TWI540612B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW106105260A TW201721717A (zh) 2003-06-19 2004-06-18 曝光裝置、曝光方法、及元件製造方法
TW093117577A TW200514132A (en) 2003-06-19 2004-06-18 Exposure equipment, and component manufacture method
TW098146230A TWI463532B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW098113289A TWI433211B (zh) 2003-06-19 2004-06-18 A method of manufacturing an exposure apparatus and an element
TW099136460A TWI482200B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW098146233A TWI433212B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW099136459A TWI457981B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW103137370A TWI564933B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW103137368A TWI527086B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW104107541A TWI543235B (zh) 2003-06-19 2004-06-18 A method of manufacturing an exposure apparatus and an element
TW102123165A TWI515770B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW102123393A TWI536430B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW105113425A TWI590306B (zh) 2003-06-19 2004-06-18 Exposure apparatus, exposure method, and device manufacturing method
TW102123164A TWI515769B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method

Family Applications After (14)

Application Number Title Priority Date Filing Date
TW106105260A TW201721717A (zh) 2003-06-19 2004-06-18 曝光裝置、曝光方法、及元件製造方法
TW093117577A TW200514132A (en) 2003-06-19 2004-06-18 Exposure equipment, and component manufacture method
TW098146230A TWI463532B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW098113289A TWI433211B (zh) 2003-06-19 2004-06-18 A method of manufacturing an exposure apparatus and an element
TW099136460A TWI482200B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW098146233A TWI433212B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW099136459A TWI457981B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW103137370A TWI564933B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW103137368A TWI527086B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW104107541A TWI543235B (zh) 2003-06-19 2004-06-18 A method of manufacturing an exposure apparatus and an element
TW102123165A TWI515770B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW102123393A TWI536430B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW105113425A TWI590306B (zh) 2003-06-19 2004-06-18 Exposure apparatus, exposure method, and device manufacturing method
TW102123164A TWI515769B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method

Country Status (9)

Country Link
US (22) US7321419B2 (enExample)
EP (4) EP2216685B1 (enExample)
JP (19) JP4437474B2 (enExample)
KR (19) KR101483916B1 (enExample)
CN (2) CN101436003B (enExample)
AT (1) ATE453209T1 (enExample)
DE (1) DE602004024782D1 (enExample)
TW (15) TWI540612B (enExample)
WO (1) WO2004114380A1 (enExample)

Families Citing this family (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101713932B (zh) 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101872135B (zh) * 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
KR101484435B1 (ko) 2003-04-09 2015-01-19 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
CN103383527B (zh) * 2003-04-10 2015-10-28 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
WO2004092833A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
EP2613195B1 (en) 2003-04-11 2015-12-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101436003B (zh) 2003-06-19 2011-08-17 株式会社尼康 曝光装置及器件制造方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1667211B1 (en) * 2003-09-26 2015-09-09 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods for a projection exposure apparatus, and method of producing a device
TWI628698B (zh) 2003-10-28 2018-07-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI612338B (zh) 2003-11-20 2018-01-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
ATE467902T1 (de) 2004-01-05 2010-05-15 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
TWI614795B (zh) 2004-02-06 2018-02-11 Nikon Corporation 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
US8111373B2 (en) 2004-03-25 2012-02-07 Nikon Corporation Exposure apparatus and device fabrication method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101259190B1 (ko) 2004-06-17 2013-04-29 가부시키가이샤 니콘 액침 리소그래피 렌즈에 대한 유체 압력 보상
WO2006007111A2 (en) 2004-07-01 2006-01-19 Nikon Corporation A dynamic fluid control system for immersion lithography
KR101337007B1 (ko) 2004-08-03 2013-12-06 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4488006B2 (ja) 2004-10-15 2010-06-23 株式会社ニコン 露光装置及びデバイス製造方法
US8330939B2 (en) 2004-11-01 2012-12-11 Nikon Corporation Immersion exposure apparatus and device manufacturing method with a liquid recovery port provided on at least one of a first stage and second stage
US7528931B2 (en) * 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2006222165A (ja) * 2005-02-08 2006-08-24 Canon Inc 露光装置
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20070115863A (ko) * 2005-03-31 2007-12-06 가부시키가이샤 니콘 노광 방법, 노광 장치 및 디바이스 제조 방법
US7161659B2 (en) 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
USRE43576E1 (en) * 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7515281B2 (en) 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2660853B1 (en) 2005-05-12 2017-07-05 Nikon Corporation Projection optical system, exposure apparatus and exposure method
JP4708860B2 (ja) * 2005-05-23 2011-06-22 キヤノン株式会社 液浸露光装置
EP1918983A4 (en) * 2005-08-05 2010-03-31 Nikon Corp STAGE EQUIPMENT AND EXPOSURE DEVICE
US20070127135A1 (en) * 2005-11-01 2007-06-07 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
WO2007052659A1 (ja) * 2005-11-01 2007-05-10 Nikon Corporation 露光装置、露光方法、及びデバイス製造方法
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US20070126999A1 (en) * 2005-12-07 2007-06-07 Nikon Corporation Apparatus and method for containing immersion liquid in immersion lithography
US7420194B2 (en) * 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN102866591B (zh) * 2006-02-21 2015-08-19 株式会社尼康 曝光装置及方法、以及元件制造方法
WO2007097380A1 (ja) * 2006-02-21 2007-08-30 Nikon Corporation パターン形成装置及びパターン形成方法、移動体駆動システム及び移動体駆動方法、露光装置及び露光方法、並びにデバイス製造方法
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US7483120B2 (en) 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
US7804582B2 (en) * 2006-07-28 2010-09-28 Asml Netherlands B.V. Lithographic apparatus, method of calibrating a lithographic apparatus and device manufacturing method
KR101933360B1 (ko) * 2006-08-31 2018-12-27 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR101763546B1 (ko) * 2006-08-31 2017-07-31 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US7999918B2 (en) * 2006-09-29 2011-08-16 Nikon Corporation Movable body system, pattern formation apparatus, exposure apparatus and exposure method, and device manufacturing method
US20080158531A1 (en) 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8237911B2 (en) * 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8267388B2 (en) * 2007-09-12 2012-09-18 Xradia, Inc. Alignment assembly
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP4533416B2 (ja) * 2007-09-25 2010-09-01 キヤノン株式会社 露光装置およびデバイス製造方法
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
KR101562073B1 (ko) 2007-10-16 2015-10-21 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
EP2179329A1 (en) 2007-10-16 2010-04-28 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8279399B2 (en) 2007-10-22 2012-10-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP4986185B2 (ja) * 2007-11-07 2012-07-25 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
TWI602033B (zh) 2007-12-28 2017-10-11 Nippon Kogaku Kk Exposure apparatus, moving body driving system, pattern forming apparatus, exposure method, and device manufacturing method
FR2927708A1 (fr) * 2008-02-19 2009-08-21 Commissariat Energie Atomique Procede de photolithographie ultraviolette a immersion
NL1036614A1 (nl) * 2008-03-21 2009-09-22 Asml Netherlands Bv A target material, a source, an EUV lithographic apparatus and a device manufacturing method using the same.
EP2128703A1 (en) 2008-05-28 2009-12-02 ASML Netherlands BV Lithographic Apparatus and a Method of Operating the Apparatus
KR101695034B1 (ko) 2008-05-28 2017-01-10 가부시키가이샤 니콘 공간 광 변조기의 검사 장치, 조명 광학계, 노광 장치, 검사 방법, 조명 광학계의 조정 방법, 조명 방법, 노광 방법, 및 디바이스 제조 방법
KR101634825B1 (ko) 2008-06-09 2016-06-29 케이엘에이-텐코어 코오포레이션 참조 검사 디바이스
US8260479B2 (en) * 2008-12-09 2012-09-04 Honeywell International Inc. Modular software architecture for an unmanned aerial vehicle
US8760629B2 (en) * 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8599359B2 (en) 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8902402B2 (en) 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
EP2221668B1 (en) * 2009-02-24 2021-04-14 ASML Netherlands B.V. Lithographic apparatus and positioning assembly
US8553204B2 (en) * 2009-05-20 2013-10-08 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8792084B2 (en) * 2009-05-20 2014-07-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8970820B2 (en) 2009-05-20 2015-03-03 Nikon Corporation Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method
JP5365407B2 (ja) * 2009-08-17 2013-12-11 ソニー株式会社 画像取得装置及び画像取得方法
US20110096312A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110102761A1 (en) * 2009-09-28 2011-05-05 Nikon Corporation Stage apparatus, exposure apparatus, and device fabricating method
US20110096306A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110096318A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110123913A1 (en) * 2009-11-19 2011-05-26 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
US20110128523A1 (en) * 2009-11-19 2011-06-02 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
DE102010024263A1 (de) * 2010-06-18 2011-12-22 Festo Ag & Co. Kg Luftlagereinrichtung
EP2593841A2 (en) * 2010-07-15 2013-05-22 Centre de Recherche Public - Gabriel Lippmann Methods and systems for detecting, setting, monitoring, determining, storing and compensating the spatial situation of a mobile unit
NL2008183A (en) * 2011-02-25 2012-08-28 Asml Netherlands Bv A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method.
WO2012127629A1 (ja) 2011-03-22 2012-09-27 富士通株式会社 サーバシステム及びクロスバボードの活性保守方法
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
NL2008695A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Lithographic apparatus comprising substrate table.
NL2007114C2 (en) * 2011-07-14 2013-01-15 Levitech B V Floating substrate monitoring and control device, and method for the same.
NL2009692A (en) * 2011-12-07 2013-06-10 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
US9211481B2 (en) * 2012-07-27 2015-12-15 Nb Tech Inc. Visual display system and method of constructing a high-gain reflective beam-splitter
JP5975785B2 (ja) * 2012-08-14 2016-08-23 株式会社アドテックエンジニアリング 描画装置、露光描画装置、プログラム及び描画方法
US9362812B2 (en) * 2012-09-18 2016-06-07 Honeywell International Inc. Shaft coupling apparatus, rotary fluid damper, and deployable device with magnetic coupling mechanism
US9772564B2 (en) 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
TWI564555B (zh) * 2014-12-27 2017-01-01 財團法人工業技術研究院 全周反射取像模組與全周反射取像方法
CN104597721B (zh) * 2015-01-20 2016-09-21 中国科学院上海光学精密机械研究所 紫外光刻二维平台
TW202316204A (zh) * 2015-03-31 2023-04-16 日商尼康股份有限公司 曝光裝置、平面顯示器之製造方法、元件製造方法、及曝光方法
TWI741654B (zh) * 2015-03-31 2021-10-01 日商尼康股份有限公司 曝光裝置、平面顯示器之製造方法、元件製造方法、及曝光方法
PL3319475T3 (pl) 2015-07-06 2020-10-19 Mitchell Terrace Pty. Ltd. Urządzenie do nakładania produktu
WO2017057539A1 (ja) * 2015-09-30 2017-04-06 株式会社ニコン 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
CN108292111B (zh) * 2015-11-30 2020-03-20 Asml荷兰有限公司 用于在光刻设备中处理衬底的方法和设备
CN109690413B (zh) * 2016-09-12 2021-04-13 Asml荷兰有限公司 用于光刻设备的流体处理结构
US10372113B2 (en) * 2016-09-23 2019-08-06 Kla-Tencor Corporation Method for defocus detection
US9990460B2 (en) * 2016-09-30 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source beam optimization method for improving lithography printability
CN109256884A (zh) * 2017-10-13 2019-01-22 朱卫 一种用钛金属生产的马达外壳
CA3095734A1 (en) 2018-02-27 2019-09-06 Georgia Tech Research Corporation System, devices, and methods providing hydrodynamic barriers
JP6922849B2 (ja) * 2018-05-25 2021-08-18 信越化学工業株式会社 単量体、ポリマー、ネガ型レジスト組成物、フォトマスクブランク、及びレジストパターン形成方法
CN110658683A (zh) * 2018-06-28 2020-01-07 上海微电子装备（集团）股份有限公司 晶片承载系统和浸没光刻设备
JP7099250B2 (ja) 2018-10-25 2022-07-12 信越化学工業株式会社 オニウム塩、ネガ型レジスト組成物及びレジストパターン形成方法
JP2019183175A (ja) * 2019-08-01 2019-10-24 ダイキン工業株式会社 離型フィルム
CN110824591A (zh) * 2019-11-20 2020-02-21 曾雪骢 一种液体镜片
CN115818207B (zh) * 2023-02-10 2023-06-02 季华实验室 一种基板传送装置、控制方法及相关设备

Family Cites Families (334)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US4026653A (en) * 1975-05-09 1977-05-31 Bell Telephone Laboratories, Incorporated Proximity printing method
US4341164A (en) 1980-06-13 1982-07-27 Charles H. Ruble Folding camp table
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) * 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
US4650983A (en) 1983-11-07 1987-03-17 Nippon Kogaku K. K. Focusing apparatus for projection optical system
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2940553B2 (ja) 1988-12-21 1999-08-25 株式会社ニコン 露光方法
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JP3200874B2 (ja) 1991-07-10 2001-08-20 株式会社ニコン 投影露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JP3203719B2 (ja) 1991-12-26 2001-08-27 株式会社ニコン 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法
US5469963A (en) 1992-04-08 1995-11-28 Asyst Technologies, Inc. Sealable transportable container having improved liner
JPH05304072A (ja) 1992-04-08 1993-11-16 Nec Corp 半導体装置の製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3316833B2 (ja) 1993-03-26 2002-08-19 株式会社ニコン 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法
JPH06208058A (ja) 1993-01-13 1994-07-26 Olympus Optical Co Ltd 顕微鏡対物レンズ
US5591958A (en) 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
US5636066A (en) 1993-03-12 1997-06-03 Nikon Corporation Optical apparatus
JPH09311278A (ja) 1996-05-20 1997-12-02 Nikon Corp 反射屈折光学系
JP3747951B2 (ja) 1994-11-07 2006-02-22 株式会社ニコン 反射屈折光学系
JP3635684B2 (ja) 1994-08-23 2005-04-06 株式会社ニコン 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置
JP3747958B2 (ja) 1995-04-07 2006-02-22 株式会社ニコン 反射屈折光学系
JP3265503B2 (ja) 1993-06-11 2002-03-11 株式会社ニコン 露光方法及び装置
US5534970A (en) 1993-06-11 1996-07-09 Nikon Corporation Scanning exposure apparatus
JP3212199B2 (ja) 1993-10-04 2001-09-25 旭硝子株式会社 平板型陰極線管
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US6989647B1 (en) 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
JP3395801B2 (ja) 1994-04-28 2003-04-14 株式会社ニコン 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
JPH07335748A (ja) 1994-06-07 1995-12-22 Miyazaki Oki Electric Co Ltd 半導体素子の製造方法
US5715064A (en) * 1994-06-17 1998-02-03 International Business Machines Corporation Step and repeat apparatus having enhanced accuracy and increased throughput
USRE38438E1 (en) 1994-08-23 2004-02-24 Nikon Corporation Catadioptric reduction projection optical system and exposure apparatus having the same
JPH0883753A (ja) 1994-09-13 1996-03-26 Nikon Corp 焦点検出方法
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08136475A (ja) 1994-11-14 1996-05-31 Kawasaki Steel Corp 板状材の表面観察装置
JP3387075B2 (ja) * 1994-12-12 2003-03-17 株式会社ニコン 走査露光方法、露光装置、及び走査型露光装置
JPH08171054A (ja) 1994-12-16 1996-07-02 Nikon Corp 反射屈折光学系
US5677758A (en) 1995-02-09 1997-10-14 Mrs Technology, Inc. Lithography System using dual substrate stages
US6008500A (en) 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3526042B2 (ja) 1995-08-09 2004-05-10 株式会社ニコン 投影露光装置
JP3242564B2 (ja) * 1995-11-29 2001-12-25 富士通株式会社 昇圧回路を有する記憶装置及び昇圧回路制御方法
JPH09232213A (ja) 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
JPH09267236A (ja) * 1996-03-29 1997-10-14 Kyocera Corp 位置決め装置
US5964441A (en) 1996-04-01 1999-10-12 Lear Corporation Linkage assembly with extruded hole member
JPH103039A (ja) 1996-06-14 1998-01-06 Nikon Corp 反射屈折光学系
JPH1020195A (ja) 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系
JP3480192B2 (ja) * 1996-10-01 2003-12-15 ウシオ電機株式会社 Ｘｙステージの位置決め装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH10188333A (ja) * 1996-11-08 1998-07-21 Hitachi Maxell Ltd 原盤露光装置
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029181B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置
AU5067898A (en) 1996-11-28 1998-06-22 Nikon Corporation Aligner and method for exposure
US5815246A (en) 1996-12-24 1998-09-29 U.S. Philips Corporation Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
USRE39027E1 (en) * 1997-02-07 2006-03-21 Emerson Power Transmission Manufacturing, L.P. Shaft locking device for bearing assemblies
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
USRE40043E1 (en) 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
US5884841A (en) * 1997-04-25 1999-03-23 Ratnik Industries, Inc. Method and apparatus for making snow
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
WO1999016113A1 (en) 1997-09-19 1999-04-01 Nikon Corporation Stage device, a scanning aligner and a scanning exposure method, and a device manufactured thereby
JP2000106340A (ja) * 1997-09-26 2000-04-11 Nikon Corp 露光装置及び走査露光方法、並びにステージ装置
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
WO1999027568A1 (en) 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
EP1041357A4 (en) 1997-12-18 2005-06-15 Nikon Corp PLATINUM AND EXPOSURE APPARATUS
JP4264676B2 (ja) 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
JPH11219896A (ja) * 1998-02-02 1999-08-10 Canon Inc 露光装置およびデバイス製造方法
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JPH11340846A (ja) 1998-05-26 1999-12-10 Alps Electric Co Ltd Ｄｅｃｔ通信装置
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
WO2000017916A1 (en) 1998-09-17 2000-03-30 Nikon Corporation Method of adjusting optical projection system
CN1238882C (zh) 1998-12-02 2006-01-25 纽波特公司 试片夹持机械手末端执行器
US6842221B1 (en) 1999-03-12 2005-01-11 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
JP4365934B2 (ja) 1999-05-10 2009-11-18 キヤノン株式会社 露光装置、半導体製造装置およびデバイス製造方法
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
JP2001118773A (ja) 1999-10-18 2001-04-27 Nikon Corp ステージ装置及び露光装置
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
JP2001160530A (ja) * 1999-12-01 2001-06-12 Nikon Corp ステージ装置及び露光装置
TWI223734B (en) 1999-12-21 2004-11-11 Asml Netherlands Bv Crash prevention in positioning apparatus for use in lithographic projection apparatus
EP1111471B1 (en) * 1999-12-21 2005-11-23 ASML Netherlands B.V. Lithographic projection apparatus with collision preventing device
TW546551B (en) 1999-12-21 2003-08-11 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) * 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
JP2001267239A (ja) 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2001313250A (ja) 2000-02-25 2001-11-09 Nikon Corp 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
JP2001241439A (ja) * 2000-02-25 2001-09-07 Canon Inc 静圧軸受を備えた移動装置
TW546699B (en) 2000-02-25 2003-08-11 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
US6426790B1 (en) * 2000-02-28 2002-07-30 Nikon Corporation Stage apparatus and holder, and scanning exposure apparatus and exposure apparatus
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
DE60130754T2 (de) 2000-05-03 2008-01-24 Asml Holding, N.V. Apparat zur Erzeugung eines gespülten optischen Weges in einer photolithographischen Projektionsanlage sowie ein entsprechendes Verfahren
SE517970C2 (sv) 2000-07-20 2002-08-13 Volvo Articulated Haulers Ab Förfarande för att uppskatta en livslängdsreducerande skada på ett i drift belastat objekt,jämte datorprogramprodukt
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
JP2002134930A (ja) 2000-10-20 2002-05-10 Idec Izumi Corp 電気機器
JP4405071B2 (ja) 2000-10-23 2010-01-27 パナソニック株式会社 送り装置及びそれを具備する光ディスク原盤記録装置
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002198299A (ja) 2000-12-27 2002-07-12 Nikon Corp 露光装置及びデバイス製造方法
JP2002305140A (ja) 2001-04-06 2002-10-18 Nikon Corp 露光装置及び基板処理システム
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US6788385B2 (en) * 2001-06-21 2004-09-07 Nikon Corporation Stage device, exposure apparatus and method
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US6680774B1 (en) 2001-10-09 2004-01-20 Ultratech Stepper, Inc. Method and apparatus for mechanically masking a workpiece
US6665054B2 (en) * 2001-10-22 2003-12-16 Nikon Corporation Two stage method
US7134668B2 (en) 2001-10-24 2006-11-14 Ebara Corporation Differential pumping seal apparatus
JP2003249443A (ja) 2001-12-21 2003-09-05 Nikon Corp ステージ装置、ステージ位置管理方法、露光方法及び露光装置、並びにデバイス製造方法
US7154676B2 (en) 2002-03-01 2006-12-26 Carl Zeiss Smt A.G. Very-high aperture projection objective
DE10229249A1 (de) 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Refraktives Projektionsobjektiv mit einer Taille
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
EP1353229A1 (en) * 2002-04-09 2003-10-15 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JPWO2003085708A1 (ja) 2002-04-09 2005-08-18 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
KR20040104691A (ko) 2002-05-03 2004-12-10 칼 짜이스 에스엠테 아게 높은 개구를 갖는 투영 대물렌즈
US20040035775A1 (en) * 2002-05-31 2004-02-26 Biolink Partners, Inc. MemCoatTM: functionalized surface coatings, products and uses thereof
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420300B1 (en) * 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN101713932B (zh) 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
EP1420299B1 (en) 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
US6992750B2 (en) * 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
CN101872135B (zh) 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
ES2268450T3 (es) 2002-12-19 2007-03-16 Koninklijke Philips Electronics N.V. Metodo y dispositivo para irradiar puntos en una capa.
DE60314668T2 (de) 2002-12-19 2008-03-06 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US20040227932A1 (en) 2003-02-13 2004-11-18 Geunyoung Yoon Large dynamic range shack-hartmann wavefront sensor
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US7206059B2 (en) * 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6851787B2 (en) * 2003-03-06 2005-02-08 Hewlett-Packard Development Company, L.P. Printer servicing system and method
US7029832B2 (en) * 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
EP1612850B1 (en) 2003-04-07 2009-03-25 Nikon Corporation Exposure apparatus and method for manufacturing a device
WO2004093159A2 (en) 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
WO2004092833A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
EP1611482B1 (en) 2003-04-10 2015-06-03 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
CN103383527B (zh) 2003-04-10 2015-10-28 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
KR20190007532A (ko) 2003-04-11 2019-01-22 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
JP4582089B2 (ja) * 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
EP2613195B1 (en) * 2003-04-11 2015-12-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
JP4025683B2 (ja) * 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) * 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN1307456C (zh) * 2003-05-23 2007-03-28 佳能株式会社 投影光学系统、曝光装置及器件的制造方法
TWI616932B (zh) 2003-05-23 2018-03-01 Nikon Corp Exposure device and component manufacturing method
JP2004349645A (ja) 2003-05-26 2004-12-09 Sony Corp 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261742A3 (en) * 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
JP4084710B2 (ja) * 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) * 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
CN101436003B (zh) 2003-06-19 2011-08-17 株式会社尼康 曝光装置及器件制造方法
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) * 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1491956B1 (en) * 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1494074A1 (en) 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
JP2005022696A (ja) * 2003-07-02 2005-01-27 Kashiwara Seitai:Kk 空気通路の構造及びこれを用いた空気封入緩衝材
EP2466383B1 (en) 2003-07-08 2014-11-19 Nikon Corporation Wafer table for immersion lithography
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
EP1500982A1 (en) 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
JP4492239B2 (ja) 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
CN102323724B (zh) 2003-07-28 2014-08-13 株式会社尼康 液浸曝光装置及其制造方法、曝光装置、器件制造方法
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005057294A (ja) 2003-08-07 2005-03-03 Asml Netherlands Bv インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法
US7061578B2 (en) * 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101748923B1 (ko) 2003-09-03 2017-06-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60302897T2 (de) 2003-09-29 2006-08-03 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1519230A1 (en) 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524557A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
TWI295408B (en) 2003-10-22 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method, and measurement system
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP2005159322A (ja) 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
EP1531362A3 (en) 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
JP2005150290A (ja) 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4747263B2 (ja) 2003-11-24 2011-08-17 カール・ツァイス・エスエムティー・ゲーエムベーハー オブジェクティブにおける光学素子のための保持装置
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10355301B3 (de) 2003-11-27 2005-06-23 Infineon Technologies Ag Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) 2003-12-09 2005-06-30 Canon Inc 露光装置
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
JP4308638B2 (ja) 2003-12-17 2009-08-05 パナソニック株式会社 パターン形成方法
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
JP4586367B2 (ja) 2004-01-14 2010-11-24 株式会社ニコン ステージ装置及び露光装置
KR101179350B1 (ko) * 2004-01-14 2012-09-11 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
CN1910522B (zh) 2004-01-16 2010-05-26 卡尔蔡司Smt股份公司 偏振调制光学元件
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
JP4843503B2 (ja) 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101377815B1 (ko) 2004-02-03 2014-03-26 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20070039869A (ko) * 2004-02-03 2007-04-13 브루스 더블유. 스미스 용액을 사용한 포토리소그래피 방법 및 관련 시스템
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
EP1714192A1 (en) 2004-02-13 2006-10-25 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
JP2005236087A (ja) 2004-02-20 2005-09-02 Nikon Corp 露光装置
JP2005259789A (ja) 2004-03-09 2005-09-22 Nikon Corp 検知システム及び露光装置、デバイス製造方法
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
JP2005268700A (ja) 2004-03-22 2005-09-29 Nikon Corp ステージ装置及び露光装置
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) * 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) * 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) * 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) * 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) * 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US20050241694A1 (en) 2004-04-29 2005-11-03 Red Flame Hot Tap Services Ltd. Hot tapping method, system and apparatus
US7379159B2 (en) * 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US20060244938A1 (en) 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
US7091502B2 (en) * 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
KR101376931B1 (ko) 2004-05-17 2014-03-25 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100594430C (zh) 2004-06-04 2010-03-17 卡尔蔡司Smt股份公司 用于测量光学成像系统的图像质量的系统
US8605257B2 (en) 2004-06-04 2013-12-10 Carl Zeiss Smt Gmbh Projection system with compensation of intensity variations and compensation element therefor
JP4305915B2 (ja) 2004-06-17 2009-07-29 シャープ株式会社 基地局選択に用いる基準を求める方法
US7057702B2 (en) 2004-06-23 2006-06-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4305917B2 (ja) 2004-07-14 2009-07-29 シャープ株式会社 映像信号処理装置及びテレビジョン装置
US7256871B2 (en) 2004-07-27 2007-08-14 Asml Netherlands B.V. Lithographic apparatus and method for calibrating the same
JP4488006B2 (ja) 2004-10-15 2010-06-23 株式会社ニコン 露光装置及びデバイス製造方法
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7161659B2 (en) 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
CN101385124B (zh) 2006-05-23 2011-02-09 株式会社尼康 维修方法、曝光方法及装置、以及组件制造方法
US8436864B2 (en) * 2006-08-01 2013-05-07 Nvidia Corporation Method and user interface for enhanced graphical operation organization
US8446445B2 (en) * 2006-09-27 2013-05-21 Casio Computer Co., Ltd. Exposure device, image forming apparatus and method for operating exposure device
TWM314880U (en) * 2006-10-20 2007-07-01 Imagetech Co Ltd Multimedia video generation device
JP2007274881A (ja) 2006-12-01 2007-10-18 Nikon Corp 移動体装置、微動体及び露光装置

Also Published As

Publication number Publication date
KR20120030166A (ko) 2012-03-27
TW201021093A (en) 2010-06-01
US20070064214A1 (en) 2007-03-22
CN1802726A (zh) 2006-07-12
KR20160137693A (ko) 2016-11-30
KR101187617B1 (ko) 2012-10-08
WO2004114380A1 (ja) 2004-12-29
JP5556925B2 (ja) 2014-07-23
KR101475634B1 (ko) 2014-12-22
KR20100124345A (ko) 2010-11-26
JP2017033018A (ja) 2017-02-09
US20060114445A1 (en) 2006-06-01
EP1635382B1 (en) 2009-12-23
US20160202617A1 (en) 2016-07-14
KR20150023815A (ko) 2015-03-05
JP5494708B2 (ja) 2014-05-21
EP2216685A2 (en) 2010-08-11
TWI527086B (zh) 2016-03-21
US20130229637A1 (en) 2013-09-05
US8724085B2 (en) 2014-05-13
EP1635382A1 (en) 2006-03-15
KR101686762B1 (ko) 2016-12-28
US8018575B2 (en) 2011-09-13
EP2275869A3 (en) 2011-04-27
JP6614310B2 (ja) 2019-12-04
US20060132740A1 (en) 2006-06-22
US20120008111A1 (en) 2012-01-12
JP2017227915A (ja) 2017-12-28
TW201508817A (zh) 2015-03-01
TW201530615A (zh) 2015-08-01
US8027027B2 (en) 2011-09-27
JP6123920B2 (ja) 2017-05-10
TW201123267A (en) 2011-07-01
US8692976B2 (en) 2014-04-08
TW201721717A (zh) 2017-06-16
KR101134957B1 (ko) 2012-04-10
US20080002166A1 (en) 2008-01-03
JP2015079996A (ja) 2015-04-23
TW201117261A (en) 2011-05-16
KR20130125842A (ko) 2013-11-19
JP5626443B2 (ja) 2014-11-19
ATE453209T1 (de) 2010-01-15
US9025129B2 (en) 2015-05-05
US20180039185A1 (en) 2018-02-08
TW201342430A (zh) 2013-10-16
US20110025996A1 (en) 2011-02-03
JPWO2004114380A1 (ja) 2006-08-03
JP4505675B2 (ja) 2010-07-21
JP2014078752A (ja) 2014-05-01
JP5928618B2 (ja) 2016-06-01
TWI344171B (enExample) 2011-06-21
JP4894936B2 (ja) 2012-03-14
US8705001B2 (en) 2014-04-22
HK1152391A1 (en) 2012-02-24
HK1152392A1 (en) 2012-02-24
KR20140097389A (ko) 2014-08-06
KR101674329B1 (ko) 2016-11-08
KR20100024488A (ko) 2010-03-05
US8830445B2 (en) 2014-09-09
KR101931923B1 (ko) 2018-12-21
TW201019373A (en) 2010-05-16
US20130250257A1 (en) 2013-09-26
KR101529844B1 (ko) 2015-06-17
KR101476087B1 (ko) 2014-12-23
US7486385B2 (en) 2009-02-03
DE602004024782D1 (de) 2010-02-04
US20070211234A1 (en) 2007-09-13
KR20120093403A (ko) 2012-08-22
JP2009117877A (ja) 2009-05-28
JP2010118687A (ja) 2010-05-27
TWI433211B (zh) 2014-04-01
KR101483916B1 (ko) 2015-01-16
TWI543235B (zh) 2016-07-21
JP2013168666A (ja) 2013-08-29
KR20100124346A (ko) 2010-11-26
US8319941B2 (en) 2012-11-27
US20060132739A1 (en) 2006-06-22
US8436979B2 (en) 2013-05-07
JP2014158038A (ja) 2014-08-28
TWI433212B (zh) 2014-04-01
US8436978B2 (en) 2013-05-07
KR101830565B1 (ko) 2018-02-20
EP2278401A3 (en) 2011-04-27
US9274437B2 (en) 2016-03-01
US20170123326A1 (en) 2017-05-04
KR20120003015A (ko) 2012-01-09
US20110025997A1 (en) 2011-02-03
KR101265450B1 (ko) 2013-05-16
KR101148811B1 (ko) 2012-05-24
TWI564933B (zh) 2017-01-01
EP2216685B1 (en) 2012-06-27
TWI463532B (zh) 2014-12-01
EP2278401A2 (en) 2011-01-26
US20150198897A1 (en) 2015-07-16
TW201630048A (zh) 2016-08-16
KR20150130563A (ko) 2015-11-23
US9551943B2 (en) 2017-01-24
TW200947517A (en) 2009-11-16
US20180299788A1 (en) 2018-10-18
US20140211176A1 (en) 2014-07-31
KR20180016621A (ko) 2018-02-14
US7321419B2 (en) 2008-01-22
TW200514132A (en) 2005-04-16
KR101119812B1 (ko) 2012-03-06
US9001307B2 (en) 2015-04-07
KR20130028805A (ko) 2013-03-19
TW201342428A (zh) 2013-10-16
TWI457981B (zh) 2014-10-21
JP2019020745A (ja) 2019-02-07
JP2012138617A (ja) 2012-07-19
JP5287901B2 (ja) 2013-09-11
EP1635382A4 (en) 2008-01-30
KR20130028981A (ko) 2013-03-20
JP5287845B2 (ja) 2013-09-11
KR20060018869A (ko) 2006-03-02
KR101146962B1 (ko) 2012-05-22
TW201508818A (zh) 2015-03-01
EP2275869A2 (en) 2011-01-19
US8767177B2 (en) 2014-07-01
TWI536430B (zh) 2016-06-01
KR101419663B1 (ko) 2014-07-15
US9810995B2 (en) 2017-11-07
CN101436003B (zh) 2011-08-17
JP5488635B2 (ja) 2014-05-14
JP5761418B2 (ja) 2015-08-12
EP2278401B1 (en) 2014-01-15
US8717537B2 (en) 2014-05-06
KR20140029530A (ko) 2014-03-10
TWI515769B (zh) 2016-01-01
TW201342431A (zh) 2013-10-16
KR101148810B1 (ko) 2012-05-24
KR20110122743A (ko) 2011-11-10
JP6264479B2 (ja) 2018-01-24
KR20100005133A (ko) 2010-01-13
US20120200837A1 (en) 2012-08-09
US20140293252A1 (en) 2014-10-02
EP2275869B1 (en) 2014-01-15
JP5930102B2 (ja) 2016-06-08
TWI482200B (zh) 2015-04-21
US7812925B2 (en) 2010-10-12
JP2011119746A (ja) 2011-06-16
JP2015172784A (ja) 2015-10-01
TWI590306B (zh) 2017-07-01
CN101436003A (zh) 2009-05-20
TWI515770B (zh) 2016-01-01
KR20180132996A (ko) 2018-12-12
JP2012138618A (ja) 2012-07-19
JP4437474B2 (ja) 2010-03-24
CN100459036C (zh) 2009-02-04
KR101265454B1 (ko) 2013-05-16
JP6512252B2 (ja) 2019-05-15
US20090190112A1 (en) 2009-07-30
TW201342429A (zh) 2013-10-16
JP2016106251A (ja) 2016-06-16
JP2011109137A (ja) 2011-06-02
JP6103016B2 (ja) 2017-03-29
JP2011109138A (ja) 2011-06-02
JP5287900B2 (ja) 2013-09-11
JP2017090932A (ja) 2017-05-25
HK1145043A1 (en) 2011-03-25
JP2016042187A (ja) 2016-03-31
KR101289979B1 (ko) 2013-07-26
US9019473B2 (en) 2015-04-28
US20140211177A1 (en) 2014-07-31
JP6237857B2 (ja) 2017-11-29
US10007188B2 (en) 2018-06-26
US10191388B2 (en) 2019-01-29
US20130215403A1 (en) 2013-08-22
EP2216685A3 (en) 2010-11-10

Similar Documents

Publication Publication Date Title
TWI540612B (zh) An exposure apparatus, an exposure method, and an element manufacturing method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees