EP2179329A1 - Illumination optical system, exposure apparatus, and device manufacturing method - Google Patents

Illumination optical system, exposure apparatus, and device manufacturing method

Info

Publication number
EP2179329A1
EP2179329A1 EP08840498A EP08840498A EP2179329A1 EP 2179329 A1 EP2179329 A1 EP 2179329A1 EP 08840498 A EP08840498 A EP 08840498A EP 08840498 A EP08840498 A EP 08840498A EP 2179329 A1 EP2179329 A1 EP 2179329A1
Authority
EP
European Patent Office
Prior art keywords
light
optical system
illumination
illumination optical
intensity distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08840498A
Other languages
German (de)
French (fr)
Inventor
Hirohisa Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of EP2179329A1 publication Critical patent/EP2179329A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70075Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

Definitions

  • the present invention relates to an illumination optical system for use in an exposure apparatus that manufactures a device, such as a semiconductor device, a liquid crystal display device, an imaging device, and a thin-film magnetic head, in a photolithography process, an exposure apparatus including such an illumination optical system, and a method for manufacturing a device with such an exposure apparatus.
  • a device such as a semiconductor device, a liquid crystal display device, an imaging device, and a thin-film magnetic head
  • a technique that has drawn attention performs modified illumination at a pupil position of an illumination optical system for an exposure apparatus to form an annular- shaped or multipole-shaped (e.g., quadrupole) light intensity distribution and varies the light intensity distribution on a secondary light source, which is formed on a rear focal plane of a micro-fly's eye lens. This technique increases the focal depth and resolution of a projection optical system.
  • Japanese Laid-Out Patent Publication No. 2002-353105 discloses an exposure apparatus including a movable multi-mirror (e.g., digital micromirror device (DMD) , which includes many microscopic elements mirrors that are arranged in an array. The inclination angle and inclination direction of each of the element mirrors are varied to form a predetermined light intensity distribution at a pupil position of the illumination optical system or a position conjugated with the pupil position (secondary light source position formed at a rear focal plane of a micro-fly's eye lens) .
  • a movable multi-mirror e.g., digital micromirror device (DMD)
  • DMD digital micromirror device
  • Exposure is performed by setting the inclination angle and inclination direction of each mirror element in the movable multi-mirror so that a secondary light source image formed on a rear focal plane of the micro-fly' s eye lens has the optimal light intensity distribution that corresponds to the pattern or the like of the mask during exposure.
  • a laser light source is used as the light source.
  • the light intensity is not uniform in the cross-section of the laser light emitted from the laser light source. Accordingly, when using such laser light to form an annular-shaped or multi- pole shaped light intensity distribution at the pupil position of the illumination optical system, non-uniformity of light intensity occurs in a light distribution shape (cross-section of light beam) .
  • An illumination optical system illuminates an irradiated plane (M) with illumination light provided from a light source (1) .
  • the illumination optical system includes a spatial light modulator (Sl) which is arranged in an optical path of the illumination optical system and cooperates with part of the illumination optical system to form a desired light intensity distribution at a pupil position of the illumination optical system or a position optically conjugated with the pupil position.
  • a detection unit (30 to 33) including a light receiving surface (32a, 33a) receiving ⁇ some of the illumination light detects the light intensity distribution of the illumination light at a position in an optical path extending from the light source to the spatial light modulator.
  • a control unit (20) controls the spatial light modulator based on the light intensity distribution detected by the detection unit.
  • An exposure apparatus transfers a predetermined pattern onto a photosensitive substrate (W) .
  • the exposure apparatus includes the illumination optical system according to the present invention which illuminates the pattern that is arranged on an irradiated plane.
  • a method for manufacturing a device exposes a predetermined pattern onto a photosensitive substrate using the exposure apparatus according to the present invention (S44), develops the photosensitive substrate onto which the pattern has been transferred to form a mask layer shaped in correspondence with the pattern on a surface of the photosensitive substrate (S46) , and processes the surface of the photosensitive substrate through the mask layer (S48) .
  • the exposure apparatus includes a detection unit which detects the light intensity distribution of the illumination light at a position in an optical path extending from the light source to the spatial light modulator.
  • the spatial light modulator can be controlled to form the desired light intensity distribution at the pupil position of the illumination optical system or a position optically conjugated with the pupil position.
  • the exposure apparatus illuminates a mask using an illumination optical system according to the present invention.
  • the pattern of a mask can be exposed onto a photosensitive substrate with a high resolution and high throughput .
  • the method for manufacturing a device according to one embodiment of the present invention performs exposure with an exposure apparatus including an illumination optical system according to the present invention.
  • devices can be manufactured with a high resolution and high throughput.
  • Fig. 1 is a schematic diagram showing an exposure apparatus according to an embodiment
  • Fig. 2 is a diagram showing the structure of a spatial light modulation unit in the embodiment
  • Fig. 3 is a diagram showing the structure of a spatial light modulator in the spatial light modulation unit of the embodiment ;
  • Fig. 4 is a schematic diagram showing the structure of a conical axicon system in an illumination optical system according to the embodiment
  • Fig. 5 is a diagram illustrating the operation of the conical axicon system with respect to a secondary light source formed through annular illumination according to the embodiment ;
  • Fig. 6 is a schematic diagram showing a first cylindrical lens pair and a second cylindrical lens pair in the illumination optical system according to the embodiment
  • Fig. 7 is a diagram illustrating the operation of a zoom lens with respect to a secondary light source formed through the annular illumination according to the embodiment ;
  • Fig. 8 is a diagram showing the structure of a further illumination optical system according to the embodiment.
  • Fig. 9 is a flowchart illustrating a method for manufacturing a semiconductor device, which serves as a micro-device, according to the embodiment.
  • Fig. 10 is a flowchart illustrating a method for manufacturing a liquid crystal display device, which serves as a micro-device, according to the embodiment.
  • Fig. 1 is a schematic diagram showing the structure of an exposure apparatus according to the embodiment.
  • an XYZ orthogonal coordinate system is set as shown in Fig. 1, and the positional relationship of each member will be described with reference to the XYZ orthogonal coordinate system.
  • the XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to a wafer W, and the Z axis is orthogonal to the wafer W.
  • exposure light (illumination light) is supplied from a laser light source 1 to the exposure apparatus of the present embodiment.
  • the laser light source 1 may be, for example, an ArF excimer laser light source, which generates light having a wavelength of 193 nm, or a KrF excimer laser light source, which generates light having a wavelength of 248 nm.
  • the laser light source 1 emits generally parallel light in the Z direction.
  • the light which has a rectangular cross-section that is elongated in the X direction, enters a beam expander 2, which is formed by a pair of lenses 2a and 2b.
  • the lenses 2a and 2b respectively have a negative refractive power and a positive refractive power in a YZ plane as viewed in Fig. 1. Accordingly, the light that enters the beam expander 2 is magnified on a YZ plane as viewed in Fig. 1 and shaped into light having a predetermined rectangular cross-section.
  • the light that has passed through the beam splitter 3 enters a detection unit, which includes a beam splitter 30, a lens 31, a first CCD imaging unit 32, and a second imaging unit 33.
  • the lens 31 converges the parallel light that has passed through the beam splitter 30 onto a light receiving surface, or detection surface 32a, of the first CCD imaging unit 32. Further parallel light reflected by the beam splitter 30 falls on a light receiving surface, or detection surface 33a, of the second CCD imaging unit 33.
  • the lens 31 directs the parallel light to a position on the detection surface 32a of the first CCD imaging unit 32.
  • the inclination angle of the parallel light from the beam splitter 30 and, consequently, the inclination angle of the light reflected by the beam splitter 3 and directed toward a spatial light modulator Sl which will be described later, can be determined.
  • the first CCD imaging unit 32 is one example of an incidence angle detection unit that detects the incidence angle at which illumination light enters the spatial light modulator.
  • the illuminance distribution in a cross-section of the light that has passed through the beam splitter 30 is detected with the detection surface 33a of the second CCD imaging unit 33.
  • the first and second CCD imaging units 32 and 33 can receive a plurality of light pulses from the light source 1 and can output a detection signal every receiving one or more light pulses.
  • a detachable light attenuation filter formed by a neutral density (ND) filter having a predetermined transmittance may be arranged between the beam splitter 3 and the first and second CCD imaging units 32 and 33. Attachment and detachment of the light attenuation filter and gain adjustment of the first and second CCD imaging units 32 and 33 enable the detection signal level of each CCD imaging unit to be kept within an appropriate range.
  • ND neutral density
  • the detection signals from the first and second CCD imaging units 32 and 33 that include information on light angle deviation and light position deviation are sent to a control unit 20.
  • the spatial light modulation unit SMl includes a prism Pl and a spatial light converter Sl, which is integrally attached to the prism Pl.
  • the prism Pl which is a rectangular parallelepiped, has a side surface in which a V-shaped, wedge-like notch is formed. That is, the prism Pl has a V-shaped notch formed by two planes PSl and PS2, which intersect each other at an obtuse angle.
  • the two planes PSl and PS2 are in contact with a straight line PIa, which extends along the X axis shown in Fig. 2.
  • the spatial light modulator Sl is attached to the prism Pl on a side surface that is opposite the V-shaped notch. Inner sides of the two planes PSl and PS2 function as first and second reflection surfaces RlI and Rl2.
  • the prism Pl is arranged so that the side surface to which the spatial light modulator Sl is attached is parallel to the optical axis AX and so that the first reflection surface RIl is located at the side closer to the beam splitter 3 and the second reflection surface R12 is located at the side closer to an afocal lens, which will be described later.
  • the first reflection surface RIl of the prism Pl reflects incident light in the direction of the spatial light modulator Sl (parallel to the optical axis AX) .
  • the spatial light modulator Sl which is arranged in an optical path between the first reflection surface RIl and the second reflection surface R12, reflects the light reflected by the first reflection surface RIl toward the second reflection surface R12.
  • the reflection surface R12 of the prism Pl reflects and emits the light reflected by the spatial light modulator Sl toward the afocal lens 5.
  • the spatial light modulator Sl spatially modulates the light.
  • the spatial light modulator Sl includes a two-dimensional array of a plurality of microscopic mirror elements SEl.
  • a light ray Ll falls on a mirror element SEIa, which is one of the plurality of mirror elements SEl of the spatial light converter Sl
  • a light ray L2 falls on a mirror element SEIb, which is one of the plurality of mirror elements SEl of the spatial light converter Sl differing from the mirror element SEIa.
  • the mirror elements SEIa and SEIb respectively perform spatial modulation on the light rays Ll and L2 in accordance with their positions.
  • the prism Pl is arranged so that the air-equivalent length from incident positions IPl and IP2 at which the light rays Ll and L2 enter the prism Pl to the mirror elements SEIa and SEIb and then to emission positions OPl and OP2 from which light is emitted is equal to the air- equivalent length from positions corresponding to the incident positions IPl and IP2 to positions corresponding to the emission positions OPl and 0P2 when the optical path of exposure light does not include the prism Pl.
  • the air- equivalent length is the optical path length when an optical path length in an optical system is converted to air having a refractive index of one.
  • the air-equivalent length of a medium having refractive index n is obtained by multiplying the physical or actual optical path length of the medium by 1/n.
  • the spatial light modulator Sl is a movable multi-mirror including a plurality of mirror elements SEl, which are microscopic reflection elements.
  • Each of the mirror elements SEl is movable and has a reflection surface.
  • the orientation of the reflection surface that is, the inclination angle and inclination direction of the reflection surface is independently driven and controlled by a spatial light modulator (SLM) drive unit 26, which is controlled by a control unit 20.
  • SLM spatial light modulator
  • Each mirror element SEl is continuously rotatable by a desired rotation angle about two rotation axes that extend perpendicular to each other and parallel to the reflection surface. That is, the mirror elements SEl are each controllable so as to inline two- dimensionally along the reflection surface.
  • one example of a drive mechanism for a mirror element SEl includes a rod member 41, which supports the mirror element SEl in a manner enabling inclination about two perpendicular axes in the reflection surface, a support substrate 42, which supports the rod member 41, four electrodes 43, which are arranged on the support substrate 42 so as to surround the rod member 41, and four electrodes (not shown) , which are arranged on the rear surface of the mirror element SEl facing toward the four electrodes 43.
  • the spatial light modulator (SLM) drive unit 26 controls the potential difference between each of the four electrodes 43 and the corresponding electrode on the rear surface of the mirror element SEl to control the electrostatic force that acts between the electrodes so as to swing and incline mirror element SEl. This continuously controls the inclination angle of the mirror element SEl about the two perpendicular axes of the reflection surface within a predetermined variable range.
  • the structure of the spatial light modulator Sl is disclosed, for example, in Japanese Laid-Open Patent Publication No. 2002-353105.
  • the electrodes 43 shown in Fig. 3 (b) are arranged at the apexes (corners) of the rectangular mirror element SEl but may be arranged instead at a position corresponding to each side of the mirror element SEl.
  • the drive mechanism for the mirror element SEl is not limited to the structure of the present embodiment and any other mechanism may be used.
  • the mirror elements SEl have square outlines and are flat but are not limited in such a manner. However, from the viewpoint of light utilization efficiency, it is preferable that the mirror elements SEl have outlines enabling an arrangement that eliminates gaps. It is also preferable that the gap between adjacent mirror elements SEl be minimized. Further, it is preferable that the mirror elements SEl be as small as possible so that fine changes can be made to the illumination conditions. Moreover, the reflection surfaces of the mirror elements SEl do not have to be planar surfaces and may be curved surfaces such as concave surfaces and convex surfaces.
  • the spatial light modulator Sl is capable of performing modified illumination, which forms a desired light intensity distribution that is circular, annular, dipole-shaped, quadrupole-shaped, or the like at a pupil position (pupil surface) of an illumination optical system.
  • a storage unit 22 which is accessible by the control unit 20, stores information, for example, in the form of a lookup table, on the inclination angle and inclination direction of the mirror elements SEl in the spatial light modulator Sl to form a light intensity distribution that is circular, annular, dipole-shaped, quadrupole-shaped, or the like at the pupil position of the illumination optical system when the incident light has no light intensity variations.
  • control unit 20 When detecting variations (non-uniformity) in the light intensity of the illumination light at a position in the optical path extending from the light source 1 to the spatial light modulator Sl based on the detection result of the detection unit (30 to 33) , to form light distributions that are circular, annular, dipole-shaped, quadrupole- shaped, or the like, the control unit 20 performs an optimization calculation to uniform the light distribution and calculates a corrected inclination angle and corrected inclination direction of each mirror element SEl.
  • the control unit 20 Based on the corrected inclination angle and inclination direction, the control unit 20 sends a control signal to the SLM drive unit 26, and the SLM drive unit 26 controls the inclination angle and inclination direction of each mirror element SEl to form the desired light intensity distribution at the pupil position of the illumination optical system or a position optically conjugated with the pupil position.
  • the control unit 20 obtains the intensity of the light entering the mirror element SEl from the light intensity distribution in the cross-section of the illumination light detected by the detection unit (30 to 33) . Then, the control unit 20 calculates the light intensity distribution in the light distribution shape formed at the pupil position of the illumination optical system using the information stored in the storage unit 22 on- the inclination angle and inclination direction of each mirror element SEl and the information related to the intensity of the light entering each mirror element SEl.
  • control unit 20 obtains the corrected inclination angle and corrected inclination direction of each mirror element SEl, for example, though an appropriate minimization process, such as least squares or attenuation least squares using the inclination angle and inclination direction of each mirror element SEl as a variable and the light intensity distribution in the light intensity distribution shape that is to be formed at a pupil position in the illumination optical system as a target value.
  • the correction operation does not use a Fourier transform that would require time for calculation. Thus, the inclination angle and inclination direction of each mirror element SEl is quickly calculated.
  • the control unit 20 corrects the inclination angles of the plurality of mirror elements SEl in the spatial light modulator Sl of the spatial light modulation unit SMl based on information on angle deviations of the illumination light detected by the detection unit (30 to 33) .
  • the control unit 20 uses the information on the angle deviation of the illumination light detected by the detection unit (30 to 33) to correct the inclination angle and inclination direction of each mirror element SEl stored in the storage unit 22 in the form of a lookup table. For example, when the angle deviation of the illumination light is ⁇ , the angle deviation becomes 2 ⁇ when the light is reflected by each mirror element SEl. The inclination angle of each mirror element SEl for correcting the angle deviation 2 ⁇ of the reflection light is - ⁇ . Thus, the control unit 20 adds the correction angle - ⁇ to the information on the inclination angle and inclination direction of each mirror element SEl stored in the form of a lookup table to obtain the corrected inclination angle and corrected inclination direction of each mirror element SEl. This correction operation enables the elimination of an optical axis inclination correction mechanism that would be arranged between the light source and the main body of the exposure apparatus .
  • the spatial light modulator Sl is controlled so that the light distribution shape of incident light is transformed from a rectangular shape to an annular shape.
  • the light that passes through the spatial light modulation unit SMl enters the afocal lens 5 (relay optical system) and forms an annular light intensity distribution near a pupil position of the afocal lens 5 (and consequently the illumination optical system) or near the pupil position.
  • the afocal lens 5 is an afocal system (non- focal optical system) in which its front focal point is located at the same position as the spatial light modulator Sl and its rear focal point is located at the same position as a predetermined plane 6, which is indicated by broken lines in the drawing. Accordingly, the light entering the spatial light modulator Sl forms an annular light intensity distribution at the pupil position of the afocal lens 5 and is then emitted from the afocal lens 5 as parallel light.
  • a conical axicon system 87, a first cylindrical lens pair 88, and a second cylindrical lens pair 89 are arranged at or near the pupil position of the illumination optical system from the light source side.
  • Fig. 4 is a schematic diagram showing the conical axicon system 87, which is arranged at or near the pupil position of the illumination optical system.
  • the conical axicon system 87 includes from the light source side a first prism 87a and a second prism 87b.
  • the first prism 87a includes a concave, conical refraction surface (concave refraction surface) .
  • the second prism 87b includes a convex, conical refraction surface (convex refraction surface) that is formed to be complement so as to enable contact with the concave, conical refraction surface of the first prism 87a.
  • the first prism 87a is arranged so that its planar surface faces toward the light source side and its concave, conical refraction surface faces toward a mask M.
  • the second prism 87b is arranged so that its convex, conical refraction surface faces toward the light source and its planar surface faces toward the mask M.
  • At least either one of the first prism 87a and the second prism 87b is movable along the optical axis AX so that the interval between the concave, conical refraction surface of the first prism 87a and the convex, conical refraction surface of the second prism 87b (hereinafter, referred to as the interval of the conical axicon system 87) is variable.
  • the conical axicon system 87 functions as a plane parallel plate and does not affect an annular secondary light source that is formed by a micro- lens array 10, which will be described later.
  • the conical axicon system 87 functions as a so-called beam expander. Accordingly, when varying the interval in the conical axicon system 87, the incident angle of the light entering the predetermined plane 6, which is indicated by the broken line in Fig. 1, is varied.
  • Fig. 5 includes drawings illustrating the operation of the conical axicon system 87 with respect to a secondary light source formed through annular illumination.
  • Fig. 5 (a) is a drawing showing an annular secondary light source 130a that is in the smallest state in which the interval in the conical axicon system 87 is zero and the focal length of a zoom lens 7, which will be described later, is set to a minimum value (hereinafter, referred to as the "standard state") .
  • Fig. 5(b) is a drawing showing an annular secondary light source 130b formed in a state in which the interval in the conical axicon system 87 is increased to a predetermined value (the focal length of the zoom lens 7 is invariable) .
  • the width of the secondary light source 130b in the radial direction (a value that is 1/2 the difference between the outer diameter and inner diameter, indicated by the double-headed arrows in the drawings) is the same as the width of the secondary light source 130a in the radial direction.
  • the outer diameter and inner diameter of the annular secondary light source can be increased from the standard state while maintaining the same radial width of the annular secondary light source as the standard state. That is, the conical axicon system 87 functions to vary the annular ratio (inner diameter / outer diameter) and size (outer diameter) of the secondary light source without changing the radial width of the annular secondary light source.
  • Fig. 6 is a schematic diagram showing the first cylindrical lens pair 88 and the second cylindrical lens pair 89 arranged in an optical path between the front lens group 5a and rear lens group 5b of the afocal lens 5.
  • the first cylindrical lens pair 88 includes from the light source side a first cylindrical negative lens 88a, which has, for example, negative refractive power in a YZ plane and no refractive power in an XY plane, and a first cylindrical positive lens 88b, which has positive refraction power in a YZ plane and no refractive power in an XY plane.
  • the second cylindrical lens pair 89 includes from the light source side a second cylindrical negative lens 89a, which has, for example, negative refractive power in an XY plane and no refractive power in a YZ plane, and a second cylindrical positive lens 89b, which has positive refraction power in an XY plane and no refractive power in a YZ plane.
  • the first cylindrical negative lens 88a and the first cylindrical positive lens 88b are formed so as to rotate integrally about the optical axis AX.
  • the second cylindrical negative lens 89a and the second cylindrical positive lens 89b are formed so as to rotate integrally about the optical axis AX.
  • the first cylindrical lens pair 88 functions as a beam expander having power in the Z direction
  • the second cylindrical lens pair 89 functions as a beam expander having power in the X direction.
  • the first cylindrical lens pair 88 and the second cylindrical lens pair 89 are set to have the same power. Accordingly, the light that passes through the first cylindrical lens pair 88 and the second cylindrical lens pair 89 is subjected to a magnification effect resulting from the same powers in the Z direction and X direction.
  • the predetermined plane 6 is located at or near the front focal point of the zoom lens 7, and the micro-lens array 10, which will be described later, is arranged at or near the rear focal plane of the zoom lens 7.
  • the zoom lens 7 arranges the predetermined plane 6 and the incidence surface of the micro-lens array 10 to substantially satisfy an optical Fourier transform relationship and consequently arranges the pupil position of the afocal lens 5 and the incidence surface of the micro-lens array 10 to be generally conjugated with each other.
  • annular illumination field is formed about the optical axis AX on the incidence surface of the micro-lens array 10.
  • the entire shape of the annular illumination field varies in similarity in a manner dependent on the focal length of the zoom lens 7. That is, the size of the secondary light source (planar light source) formed at a position optically conjugated to the pupil position of the illumination optical system by the micro-lens array 10 is varied in similarity in a manner dependent on the focal length of the zoom lens 7 while keeping the amount of the illumination light emitted from the laser light source 1 substantially constant.
  • Fig. 7 includes drawings illustrating the operation of the zoom lens 7 with respect to the secondary light source formed by the annular illumination.
  • Fig. 7 (a) is a drawing showing the annular secondary light source 130a that is formed in the standard state
  • Fig. 7 (b) is a drawing showing an annular secondary light source 130c that is formed in a state in which the focal length of the zoom lens 7 is increased to a predetermined value (the interval of the conical axicon system 87 is invariable) .
  • a predetermined value the interval of the conical axicon system 87 is invariable
  • the annular secondary light source 130a when increasing the focal length of the zoom lens 7 from the minimum value to a predetermined value, the annular secondary light source 130a is transformed to the secondary light source 130c by magnifying the entire shape of the annular secondary light source 130a in similarity while keeping the amount of illumination light substantially constant. That is, the zoom lens 7 functions to vary the width and size (outer diameter) of the annular secondary light source without changing the annular ratio of the annular secondary light source.
  • the light that passes through the zoom lens 7 enters a beam splitter 8.
  • the light reflected by the beam splitter 8 enters a CCD imaging unit 9 (detection unit) .
  • the CCD imaging unit 9 sends an image signal to the control unit 20.
  • the beam splitter 8 which is arranged in an optical path between the spatial light modulator and irradiated plane, is also referred to as an optical path branching member, which branches off some of the illumination light from the optical path and guides the branched light to an information acquisition unit.
  • the light that passes through the beam splitter 8 enters the micro-lens array 10, which serves as an optical integrator.
  • the incidence angle of the light entering the micro-lens array 10 varies in accordance with changes in the interval in the conical axicon system 87 in the same manner as the angle of the light entering the predetermined plane 6.
  • the micro-lens array 10 is an optical device formed by a matrix of a plurality of densely arranged micro lenses having positive refractive power.
  • Each micro lens of the micro-lens array 10 includes a rectangular cross-section, which is in similarity with the shape of the illumination field that is to be formed on the mask M ( (i.e., a plane to be irradiated or an irradiated plane) . (consequently, the shape of the exposure region that is to be formed on a wafer W) .
  • the light entering the micro-lens array 10 is divided two-dimensionally by the plurality of micro lens so as to form at a rear focal plane (consequently, an illumination pupil) a secondary light source having generally the same light distribution as the illumination field formed by the light entering micro-lens array 10, that is, a secondary light source, which is formed by a substantially annular planar light source extending about the optical axis AX.
  • the plane on which this secondary light source is formed is a plane conjugate with an aperture stop of the projection optical system PL and can be called an illumination pupil plane of the illumination apparatus IL.
  • the irradiated plane (the plane on which the mask M is arranged or the surface on which the wafer W is arranged) becomes an optical Fourier transform plane with respect to the illumination pupil plane.
  • the pupil intensity distribution is a light intensity distribution on the illumination pupil plane of the illumination apparatus IL or on a plane conjugate with the illumination pupil plane.
  • micro-lens array 10 when the number of wavefront divisions by the micro-lens array 10 is large, an overall luminance distribution formed on the entrance surface of the micro-lens array 10 shows a high correlation with the overall intensity distribution of the entire secondary light source (pupil intensity distribution) , and, therefore, the light intensity distributions on the entrance surface of the micro-lens array 10 and on a plane conjugate with the entrance surface can also be called pupil intensity distributions.
  • Concerning such micro-lens array 10 reference can be made to U.S. Pat. No. 6,913,373, and U.S. Pat. Application No. 2008/0074631.
  • the micro-lens array 10 can be termed a micro fly's eye lens.
  • the light from the annular secondary light source formed on the rear focal plane of the micro-lens array 10 passes through an aperture stop 12, which can be arranged at or near the rear focal plane (emission plane) of the micro- lens array 10.
  • the aperture stop 12 is formed, for example, by an iris stop or the like that limits the size of the secondary light source formed on the rear focal plane of the micro-lens array 10 to a predetermined size.
  • the light beams that pass through the aperture stop 12 passes through a beam splitter 14 and a condenser lens 17a and illuminates a mask blind MB in a superimposed manner.
  • the light reflected by the beam splitter 14 passes through a lens 15 and enters a photodiode 16.
  • the photodiode 16 sends a detection signal to the control unit 20.
  • a rectangular illumination field which is in accordance with the shape and focal length of each micro lens forming the micro-lens array 10, is formed in the mask blind MB, which serves as an illumination field stop.
  • the light beams that pass through a rectangular aperture of the mask blind MB is subjected to a light converging operation of an imaging optical system 17b and then reflected by a reflection mirror 19 to illuminate in a superimposing manner the mask M, on which a predetermined pattern is formed. That is, the imaging optical system 17b forms an image of the rectangular aperture in the mask blind MB on the mask M, which is placed on a mask stage MS.
  • the laser light source 1 to reflection mirror 19, the CCD imaging units 32 and 33, and the spatial light modulation unit SMl form an illumination optical system.
  • the light that passes through the pattern on the mask M forms a pattern image of the mask M on the wafer W, which is a photosensitive substrate.
  • the pattern of the mask M is sequentially exposed onto each exposure region in the mask by performing batch exposure or scan exposure while two-dimensionally drive-controlling the wafer W on a wafer stage WS in a plane that is orthogonal to the optical axis AX of the projection optical system PL.
  • the control unit 20 detects in predetermined time intervals the light intensity distribution (information related to light intensity distribution) at the pupil position of the illumination optical system or a position optically conjugated with the pupil position based on the detection signal from the CCD imaging unit 9.
  • the control unit 20 corrects the optimization calculation, which is performed by the control unit 20, for the inclination angle and inclination direction of each mirror element SEl based on the detection results of the CCD imaging units 32 and 33.
  • the control unit 20 performs an optimization calculation so that the light intensity becomes uniform in the light distribution shape on the pupil plane of the illumination optical system.
  • the control unit 20 corrects the optimization calculation based on the detection result of the CCD imaging unit 9.
  • the control unit 20 adjusts the inclination angle and inclination direction of each mirror element SEl through the corrected optimization calculation based on the detection results of the CCD imaging units 32 and 33.
  • the control unit 20 controls the SLM drive unit 26 to control the inclination angle and inclination direction of each mirror element SEl and form the desired light distribution shape at the pupil position of the illumination optical system or a position optically conjugated with the pupil position.
  • the exposure apparatus of the present embodiment shown in Fig. 1 is arranged separately from a movable exposure stage (wafer stage WS) , which holds a processed substrate such as the wafer W.
  • a CCD imaging unit 39 (detection unit) is arranged on a measurement stage, which supports various measurement members and sensors.
  • the CCD imaging unit 39 Based on light that passes through both of the illumination optical system and the projection optical system, the CCD imaging unit 39 detects the light intensity distribution at the pupil position of the illumination optical system (projection optical system) and a position optically conjugated with the pupil position and sends the detection result to the control unit 20.
  • the employment of the CCD imaging unit 39 enables correction of influences resulting from optical characteristic variations that occur as time elapses in the projection optical system in addition to the illumination optical system.
  • Such a CCD imaging unit 39 is disclosed, for example, in U.S. Patent Application Publication No. 2008/0030707.
  • An exposure apparatus including such a measurement stage is disclosed, for example, in Japanese Laid-Open Patent Publication No. 11-135400.
  • the CCD imaging unit 9, together with one or both of the photodiode 16 and the CCD imaging unit 39 when necessary, may also be referred to as an information acquisition unit which acquires information related to the light intensity distribution.
  • the inclination angle and inclination direction of each mirror element in the spatial light modulator which obtains the desired light intensity distribution at the pupil position of the illumination optical system or a position optically conjugated with the pupil position, is adjusted by the optimization calculation based on the detection results of the CCD imaging units 32 and 33.
  • the inclination angle and inclination direction of each mirror element SEl can be obtained with less calculations.
  • the desired light intensity distribution to be easily formed at the pupil position of the illumination optical system or a position optically conjugated with the pupil position. Further, the light intensity distribution at the pupil position of the illumination optical system is detected at predetermined time intervals. Based on this detection result, the optimization calculation, which is based on the detection result of the CCD imaging units 32 and 33, is corrected. This ensures accurate optimization calculations that are based on the detection result of the CCD imaging units 32 and 33. Accordingly, mask patterns may be exposed into wafers with a high resolution and satisfactory throughput .
  • the above-described embodiment uses a single spatial light modulator. However, a plurality of spatial light modulators may be used. A modification using a plurality of spatial light modulators will now be described with reference to Fig. 8.
  • Fig. 8 shows a spatial light modulation unit SM2 arranged at the position where the spatial light modulation unit SMl shown in Fig. 1 is located, that is, in the optical path between the beam splitter 3 and the afocal lens 5.
  • Fig. 8 shows only the optical path between the beam splitter 3 and the afocal lens 5.
  • the spatial light modulation unit SM2 includes a divisional light guide member, which divides the incident light into two lights (generally, a plurality of lights) and then guides the first light to a first spatial light modulator S2 and the second light to a second spatial light modulator S3.
  • a prism P2 which is shaped as a triangular prism having a triangular cross- section along a YZ plane, is used as the divisional light guide member.
  • the prism P2 includes two side surfaces PS3 and PS4, which are symmetric to a plane lying along the optical axis and being parallel to a YZ plane.
  • the side surface PS3 functions as a reflection surface R21 that reflects the incident light toward a plurality of mirror elements in the first spatial light modulator S2.
  • the side surface PS4 functions as a reflection surface R31 that reflects the incident light toward a plurality of mirror elements in the second spatial light modulator S3.
  • the prism P2 divides incident light into two lights along the ridgelines of the reflection surfaces R21 and R31.
  • the prism P2 which functions as the divisional light guide member, includes a first deflection surface R21, which deflects the incident light toward the first spatial light modulator S2, and a deflection surface R31, which deflects the incident light toward the second spatial light modulator S3. Further, the prism P2 divides the incident light into a first light and a second light along the ridgelines of the first deflection surface R21 and the second deflection surface R31.
  • the light that reaches the first spatial light modulator S2 is reflected by a reflection surface R22 (third deflection surface) of a planar reflection mirror PS5 and emitted out of the spatial light modulation unit SM2.
  • the light that reaches the second spatial light modulator S3 is reflected by a reflection surface R32 (fourth deflection surface) of a planar reflection mirror PS ⁇ and emitted out of the spatial light modulation unit SM2.
  • first and second spatial light modulators S2 and S3 are the same as the spatial light modulator Sl described above and thus will not be described here.
  • the detection unit (30 to 33) detects displacement of the light entering the divisional light guide member P2 and corrects light intensity distribution errors, which are caused by the light displacement, in the light distribution shape formed at the pupil position of the illumination optical system by correcting the inclination angle and inclination direction of each mirror element in the spatial light modulators S2 and S3.
  • a spatial light modulator that enables the orientation of two-dimensionally arranged reflection surfaces to be separately controlled is used as the spatial light modulator including a plurality of two-dimensionally arranged, separately controlled reflection elements.
  • Examples of such a spatial light modulator are disclosed in Japanese National Phase Laid-Open Patent Publication No. 10- 503300 and its corresponding European Patent Publication No. 779530, Japanese Laid-Open Patent Publication No. 2004-78136 and its corresponding U.S. Patent No. 6,900,915, Japanese National Phase Laid-Open Patent Publication No. 2006-524349 and its corresponding U.S. Patent No. 7,095,546, and Japanese Laid-Open Patent Publication No. 2006-113437.
  • each reflection surface of the spatial light modulator enters a distribution formation optical system at a predetermined angle and forms a predetermined light intensity distribution on an illumination pupil plane in correspondence with a control signal sent to the plurality of optical elements.
  • the spatial light modulator for example, a spatial light modulator enabling the height of two- dimensionally arranged reflection surfaces to be separately controlled may be used.
  • a spatial light modulator are disclosed in Japanese Laid-Open Patent Publication No. 6-281869 and its corresponding U.S. Patent No. 5,312,513 and Japanese National Phase Laid-Open Patent Publication No. 2004-520618 and its corresponding U.S.
  • Patent No. 6,885,493 in Fig. Id. the formation of a two-dimensional height distribution affects incident light in the same manner as a diffraction plane.
  • the above-described spatial light modulator including a plurality of two-dimensionally arranged reflection surfaces may be modified in accordance with the disclosures of, for example, Japanese National Phase Laid-Open Patent Publication No. 2006-513442 and its corresponding U.S. Patent No. 6,891,655 and Japanese National Phase Laid-Open Patent Publication No. 2005-524112 and its corresponding U.S. Patent Application Publication No. 2005/0095749.
  • an ArF excimer laser light source or a KrF excimer laser light source is used.
  • an F2 laser light source may be used instead.
  • the spatial light modulator may be controlled as described below.
  • the control is executed to form a specific light intensity distribution (hereafter, referred to as the first pupil intensity distribution) at the pupil position of the illumination optical system or a position optically conjugated with the pupil position will be discussed.
  • the correction procedures described below are performed prior to actual exposure.
  • the first CCD imaging unit 32 and second CCD imaging unit 33 which serve as a detection unit, are used to measure the incidence angle of the light directed toward the spatial light modulator Sl (S2 and S3) and the illuminance distribution in the cross-section of the light. Then, the detection unit sends the measurement result to the control unit 20.
  • the control unit 20 Based on information of the inclination angle and inclination direction of each mirror element in the spatial light modulator Sl that is read from the storage unit 22 to generate the first pupil intensity distribution and correction information of the inclination angle and inclination direction of each mirror element SEl that can be calculated from the measurement result of the detection unit, the control unit 20 sends a control signal to the SLM drive unit 26.
  • the SLM drive unit 26 sets the inclination angle and inclination direction of each mirror element based on the control signal from the SLM drive unit 26.
  • the CCD imaging unit 39 measures the light intensity distribution at a position conjugated with the pupil position of the projection optical system and sends the measurement results to the control unit 20.
  • the CCD imaging unit 9 measures the light intensity distribution formed on the incidence surface of the optical integrator 10 and sends the measurement result to the control unit 20.
  • the imaging unit 39 uses as the mask M a light transmissive substrate having no pattern.
  • the control unit 20 compares the light intensity distribution measured by the imaging unit 39 and the first pupil intensity distribution that is to be formed. When the intensity distributions are the same (the difference therebetween being within a tolerable range) , the measurement result of the CCD imaging unit 9 is stored in the storage unit 22 in association with the first pupil intensity distribution. When the intensity distributions are not the same (the difference therebetween being outside the tolerable range) , the control unit 20 performs the procedures for resetting the inclination angle and inclination direction of each mirror element Sl in the spatial light modulator Sl, and the CCD imaging unit 39 repeats the measurement procedures.
  • the correction procedures are performed for each of the pupil intensity distributions (e.g., second pupil intensity distribution and third pupil intensity distribution) .
  • the first and second CCD imaging units 32 and 33 measure the incidence angle of the light entering the SLM and the illuminance distribution in the cross-section of the light just before exposing a single lot of wafers. Based on the measurement result, the control unit 20 sets the inclination angle and inclination direction of each mirror element SEl in the spatial light modulator Sl with the SLM drive unit 26. In this state, the CCD imaging unit 9 measures the light intensity distribution in the cross-section of the light that enters the optical integrator 10. The measurement result is compared with the measurement result associated with the first pupil intensity distribution stored in the storage unit 22. When the measurement results are the same (the difference therebetween being within the tolerable range) , exposure is actually performed. When the measurement results are not the same (the difference therebetween being outside the tolerable range) , the inclination angle and inclination direction of the mirror elements SEl in the spatial light modulator Sl are adjusted with the SLM drive unit 26.
  • the CCD imaging unit 39 When performing measurements with the CCD imaging unit 39, the CCD imaging unit 39 must be located at the light emission side of the projection optical system. Thus, during a measurement, the wafer stage cannot be moved to the light emission side of the projection optical system. This decreases throughput during the measurement.
  • a method for manufacturing a device serving using the exposure apparatus of the above-described embodiment will now be discussed with reference to the flowchart of Fig. 9.
  • a metal film is vapor-deposited onto a wafer W, which becomes a substrate for a semiconductor device (step S40), and photoresist, which is a photosensitive material, is applied to the metal film (step S42) .
  • photoresist which is a photosensitive material
  • step S42 a pattern formed on a reticle (mask) is transferred onto each shot region in the wafer W with the exposure apparatus of the embodiment (step S44: exposure step) .
  • step S46 development step
  • step S48 processing step
  • the resist pattern is a photoresist layer including recesses and projections having shapes corresponding to the pattern transferred by the exposure apparatus of the embodiment.
  • the recesses extend through the photoresist layer.
  • the surface of the wafer W is processed through the resist pattern.
  • the processing performed on the surface of the wafer W in step S48 includes, for example, at least either one of etching and metal film formation.
  • the exposure apparatus of the embodiment uses the wafer W to which photoresist is applied as a photosensitive substrate, or plate P, to transfer the pattern.
  • Fig. 10 is a flowchart showing the manufacturing of a liquid crystal device such as a liquid crystal display device. As shown in the flowchart, to manufacture a liquid crystal device, a pattern formation step (step S50), a color filter formation step (step S52) , a cell assembly step (step S54), and a module assembly step (step S56) are sequentially performed.
  • a pattern formation step step S50
  • a color filter formation step step S52
  • step S54 cell assembly step
  • step S56 module assembly step
  • the exposure apparatus of the embodiment forms a predetermined pattern such as a circuit pattern and an electrode pattern on the plate P, which is a glass substrate to which the photoresist is applied (or the wafer W to which the photoresist is applied) .
  • the pattern formation step includes an exposure step for transferring a pattern onto a photoresist layer with the exposure apparatus of the embodiment, a development step for developing the plate P onto which the pattern has been transferred, that is, for developing the photoresist layer on the glass substrate, and a processing step for processing the surface of the glass substrate through the developed photoresist layer.
  • a color filter is formed in which a plurality of sets of three dots corresponding to R (Red) , G (Green) , and B (Blue) are arranged in a matrix or in which a plurality of sets of three stripe filters of R, G, and B are arranged extending in a horizontal scanning line direction.
  • a liquid crystal panel (liquid crystal cell) is assembled using the glass substrate having the predetermined pattern obtained in step S50 and the color filter obtained in step S52. More specifically, a liquid crystal panel is manufactured by injecting liquid crystal between the glass substrate and the color filter.
  • a module assembling step of step S56 components such as electric circuits and a backlight for enabling a display operation of the assembled liquid crystal panel are mounted on the liquid crystal panel.
  • CCD imaging unit for example, an imaging unit with a CMOS image sensor, a photodiode array, or a camera tube may be used.
  • a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with a medium having the refractive index larger than 1.1 typically, a liquid
  • a liquid immersion method it is possible to adopt one of the following techniques as a technique of filing the interior of the optical path between the projection optical system and the photosensitive substrate with the liquid: the technique of locally filling the optical path with the liquid as disclosed in International Publication WO99/49504; the technique of moving a stage holding the substrate to be exposed, in a liquid bath as disclosed in Japanese Patent Application Laid-open No. 6-124873; the technique of forming a liquid bath of a predetermined depth on a stage and holding the substrate therein as disclosed in Japanese Patent Application Laid-open No. 10-303114, and so on.
  • the application of the present invention is not limited to an exposure apparatus for manufacturing a semiconductor device.
  • the present invention may also be applied to exposure apparatuses for a liquid crystal display device formed on a rectangular glass plate or for a display device such as a plasma display device.
  • the present invention may also be widely applied to exposure apparatuses that manufacture various types of devices, such as an imaging device (CCD and the like) , a micro-machine, a thin- film magnetic head, and a DNA chip.
  • the present invention may be applied to an exposure process (exposure apparatus) used when manufacturing various types of devices to form a mask (photomask, reticle, etc. ) including a mask pattern during lithography.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)

Abstract

An illumination optical system which illuminates an irradiated plane with illumination light provided from a light source (1) includes a spatial light modulator (S1) which is arranged in an optical path of the illumination optical system and cooperates with part of the illumination optical system to form a desired light intensity distribution at a pupil position of the illumination optical system or a position optically conjugated with the pupil position. A detection unit (30-33) detects the light intensity distribution of the illumination light at a position in an optical path extending from the light source to the spatial light modulator. The detection unit includes a light receiving surface (32a, 33a) which receives some of the illumination light. A control unit (20) controls the spatial light modulator based on the light intensity distribution detected by the detection unit.

Description

DESCRIPTION
ILLUMINATION OPTICAL SYSTEM, EXPOSURE APPARATUS,
AND DEVICE MANUFACTURING METHOD
TECHNICAL FIELD
The present invention relates to an illumination optical system for use in an exposure apparatus that manufactures a device, such as a semiconductor device, a liquid crystal display device, an imaging device, and a thin-film magnetic head, in a photolithography process, an exposure apparatus including such an illumination optical system, and a method for manufacturing a device with such an exposure apparatus.
BACKGROUND ART
In recent years, the integration of patterns that are formed on a mask has become higher. Thus, to accurately transfer a fine pattern onto a wafer, a mask pattern must be illuminated with the optimal illuminance distribution. Accordingly, a technique that has drawn attention performs modified illumination at a pupil position of an illumination optical system for an exposure apparatus to form an annular- shaped or multipole-shaped (e.g., quadrupole) light intensity distribution and varies the light intensity distribution on a secondary light source, which is formed on a rear focal plane of a micro-fly's eye lens. This technique increases the focal depth and resolution of a projection optical system.
To transform light from a light source to light having an annular-shaped or multipole-shaped light intensity distribution at a pupil position, for example, Japanese Laid-Out Patent Publication No. 2002-353105 discloses an exposure apparatus including a movable multi-mirror (e.g., digital micromirror device (DMD) , which includes many microscopic elements mirrors that are arranged in an array. The inclination angle and inclination direction of each of the element mirrors are varied to form a predetermined light intensity distribution at a pupil position of the illumination optical system or a position conjugated with the pupil position (secondary light source position formed at a rear focal plane of a micro-fly's eye lens) . In this exposure apparatus, light entering each mirror element is reflected by a reflection surface of the mirror element, deflected by a predetermined angle in a predetermined direction, and transformed to light having a predetermined light intensity distribution at the pupil position of the illumination optical system. Exposure is performed by setting the inclination angle and inclination direction of each mirror element in the movable multi-mirror so that a secondary light source image formed on a rear focal plane of the micro-fly' s eye lens has the optimal light intensity distribution that corresponds to the pattern or the like of the mask during exposure.
. DISCLOSURE OF THE INVENTION
In the above-described exposure apparatus, a laser light source is used as the light source. However, the light intensity is not uniform in the cross-section of the laser light emitted from the laser light source. Accordingly, when using such laser light to form an annular-shaped or multi- pole shaped light intensity distribution at the pupil position of the illumination optical system, non-uniformity of light intensity occurs in a light distribution shape (cross-section of light beam) .
It is an object of the present invention to provide an illumination optical system, an exposure apparatus including such an illumination optical system, and a method for manufacturing a device with such an exposure apparatus that easily forms the desired light intensity distribution with uniform illumination at the pupil position of the illumination optical system or a position conjugated with the pupil position even when non-uniformity occurs in the cross-section of the light.
The structure of an embodiment of the present invention will now be discussed using reference characters. However, the present invention is not limited to this embodiment .
An illumination optical system according to one embodiment of the present invention illuminates an irradiated plane (M) with illumination light provided from a light source (1) . The illumination optical system includes a spatial light modulator (Sl) which is arranged in an optical path of the illumination optical system and cooperates with part of the illumination optical system to form a desired light intensity distribution at a pupil position of the illumination optical system or a position optically conjugated with the pupil position. A detection unit (30 to 33) including a light receiving surface (32a, 33a) receiving ■ some of the illumination light detects the light intensity distribution of the illumination light at a position in an optical path extending from the light source to the spatial light modulator. A control unit (20) controls the spatial light modulator based on the light intensity distribution detected by the detection unit.
An exposure apparatus according to one embodiment of the present invention transfers a predetermined pattern onto a photosensitive substrate (W) . The exposure apparatus includes the illumination optical system according to the present invention which illuminates the pattern that is arranged on an irradiated plane.
A method for manufacturing a device according to one embodiment of the present invention exposes a predetermined pattern onto a photosensitive substrate using the exposure apparatus according to the present invention (S44), develops the photosensitive substrate onto which the pattern has been transferred to form a mask layer shaped in correspondence with the pattern on a surface of the photosensitive substrate (S46) , and processes the surface of the photosensitive substrate through the mask layer (S48) .
The exposure apparatus according to one embodiment of the present invention includes a detection unit which detects the light intensity distribution of the illumination light at a position in an optical path extending from the light source to the spatial light modulator. Thus, based on the detection result, the spatial light modulator can be controlled to form the desired light intensity distribution at the pupil position of the illumination optical system or a position optically conjugated with the pupil position.
Further, the exposure apparatus according to one embodiment of the present invention illuminates a mask using an illumination optical system according to the present invention. Thus, the pattern of a mask can be exposed onto a photosensitive substrate with a high resolution and high throughput .
The method for manufacturing a device according to one embodiment of the present invention performs exposure with an exposure apparatus including an illumination optical system according to the present invention. Thus, devices can be manufactured with a high resolution and high throughput.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is a schematic diagram showing an exposure apparatus according to an embodiment;
Fig. 2 is a diagram showing the structure of a spatial light modulation unit in the embodiment;
Fig. 3 is a diagram showing the structure of a spatial light modulator in the spatial light modulation unit of the embodiment ;
Fig. 4 is a schematic diagram showing the structure of a conical axicon system in an illumination optical system according to the embodiment;
Fig. 5 is a diagram illustrating the operation of the conical axicon system with respect to a secondary light source formed through annular illumination according to the embodiment ;
Fig. 6 is a schematic diagram showing a first cylindrical lens pair and a second cylindrical lens pair in the illumination optical system according to the embodiment;
Fig. 7 is a diagram illustrating the operation of a zoom lens with respect to a secondary light source formed through the annular illumination according to the embodiment ;
Fig. 8 is a diagram showing the structure of a further illumination optical system according to the embodiment;
Fig. 9 is a flowchart illustrating a method for manufacturing a semiconductor device, which serves as a micro-device, according to the embodiment; and
Fig. 10 is a flowchart illustrating a method for manufacturing a liquid crystal display device, which serves as a micro-device, according to the embodiment.
BEST MODE FOR CARRYING OUT THE INVENTION
An exposure apparatus according to an embodiment of the present invention will now be discussed with reference to the drawings. Fig. 1 is a schematic diagram showing the structure of an exposure apparatus according to the embodiment. In the description hereafter, an XYZ orthogonal coordinate system is set as shown in Fig. 1, and the positional relationship of each member will be described with reference to the XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to a wafer W, and the Z axis is orthogonal to the wafer W.
With reference to Fig. 1, exposure light (illumination light) is supplied from a laser light source 1 to the exposure apparatus of the present embodiment. The laser light source 1 may be, for example, an ArF excimer laser light source, which generates light having a wavelength of 193 nm, or a KrF excimer laser light source, which generates light having a wavelength of 248 nm. The laser light source 1 emits generally parallel light in the Z direction. The light, which has a rectangular cross-section that is elongated in the X direction, enters a beam expander 2, which is formed by a pair of lenses 2a and 2b. The lenses 2a and 2b respectively have a negative refractive power and a positive refractive power in a YZ plane as viewed in Fig. 1. Accordingly, the light that enters the beam expander 2 is magnified on a YZ plane as viewed in Fig. 1 and shaped into light having a predetermined rectangular cross-section. The parallel light that has passed through the beam expander 2, which serves as a shaping optical system, enters a beam splitter 3.
The light that has passed through the beam splitter 3 enters a detection unit, which includes a beam splitter 30, a lens 31, a first CCD imaging unit 32, and a second imaging unit 33. In the detection unit (30 to 33), the lens 31 converges the parallel light that has passed through the beam splitter 30 onto a light receiving surface, or detection surface 32a, of the first CCD imaging unit 32. Further parallel light reflected by the beam splitter 30 falls on a light receiving surface, or detection surface 33a, of the second CCD imaging unit 33.
In accordance with the inclination of the parallel light from the beam splitter 30, the lens 31 directs the parallel light to a position on the detection surface 32a of the first CCD imaging unit 32. Thus, by detecting the position at which light converges on the detection surface 32a of the first CCD imaging unit 32, the inclination angle of the parallel light from the beam splitter 30 and, consequently, the inclination angle of the light reflected by the beam splitter 3 and directed toward a spatial light modulator Sl, which will be described later, can be determined. The first CCD imaging unit 32 is one example of an incidence angle detection unit that detects the incidence angle at which illumination light enters the spatial light modulator.
The illuminance distribution in a cross-section of the light that has passed through the beam splitter 30 is detected with the detection surface 33a of the second CCD imaging unit 33. By obtaining the center of the illuminance distribution, displacement of the parallel light from the beam splitter 30 and consequently, displacement of the light reflected by the beam splitter 3 and directed to the spatial light modulator Sl can be obtained.
The first and second CCD imaging units 32 and 33 can receive a plurality of light pulses from the light source 1 and can output a detection signal every receiving one or more light pulses.
To attenuate the illuminance of the light directed toward the first and second CCD imaging units 32 and 33 when necessary, a detachable light attenuation filter formed by a neutral density (ND) filter having a predetermined transmittance may be arranged between the beam splitter 3 and the first and second CCD imaging units 32 and 33. Attachment and detachment of the light attenuation filter and gain adjustment of the first and second CCD imaging units 32 and 33 enable the detection signal level of each CCD imaging unit to be kept within an appropriate range.
The detection signals from the first and second CCD imaging units 32 and 33 that include information on light angle deviation and light position deviation are sent to a control unit 20. The light reflected by the beam splitter 3 and deflected in the Y direction enters the spatial light modulation unit SMl.
As shown in Fig. 2, the spatial light modulation unit SMl includes a prism Pl and a spatial light converter Sl, which is integrally attached to the prism Pl. The prism Pl, which is a rectangular parallelepiped, has a side surface in which a V-shaped, wedge-like notch is formed. That is, the prism Pl has a V-shaped notch formed by two planes PSl and PS2, which intersect each other at an obtuse angle. The two planes PSl and PS2 are in contact with a straight line PIa, which extends along the X axis shown in Fig. 2. The spatial light modulator Sl is attached to the prism Pl on a side surface that is opposite the V-shaped notch. Inner sides of the two planes PSl and PS2 function as first and second reflection surfaces RlI and Rl2.
The prism Pl is arranged so that the side surface to which the spatial light modulator Sl is attached is parallel to the optical axis AX and so that the first reflection surface RIl is located at the side closer to the beam splitter 3 and the second reflection surface R12 is located at the side closer to an afocal lens, which will be described later. The first reflection surface RIl of the prism Pl reflects incident light in the direction of the spatial light modulator Sl (parallel to the optical axis AX) . The spatial light modulator Sl, which is arranged in an optical path between the first reflection surface RIl and the second reflection surface R12, reflects the light reflected by the first reflection surface RIl toward the second reflection surface R12. The reflection surface R12 of the prism Pl reflects and emits the light reflected by the spatial light modulator Sl toward the afocal lens 5. In accordance with the position at which the light reflected by the first reflection surface RIl enters the spatial light modulator Sl, the spatial light modulator Sl spatially modulates the light. As shown in Fig. 3, the spatial light modulator Sl includes a two-dimensional array of a plurality of microscopic mirror elements SEl. For example, in the light that enters the spatial light modulator Sl, a light ray Ll falls on a mirror element SEIa, which is one of the plurality of mirror elements SEl of the spatial light converter Sl, and a light ray L2 falls on a mirror element SEIb, which is one of the plurality of mirror elements SEl of the spatial light converter Sl differing from the mirror element SEIa. The mirror elements SEIa and SEIb respectively perform spatial modulation on the light rays Ll and L2 in accordance with their positions.
The prism Pl is arranged so that the air-equivalent length from incident positions IPl and IP2 at which the light rays Ll and L2 enter the prism Pl to the mirror elements SEIa and SEIb and then to emission positions OPl and OP2 from which light is emitted is equal to the air- equivalent length from positions corresponding to the incident positions IPl and IP2 to positions corresponding to the emission positions OPl and 0P2 when the optical path of exposure light does not include the prism Pl. The air- equivalent length is the optical path length when an optical path length in an optical system is converted to air having a refractive index of one. The air-equivalent length of a medium having refractive index n is obtained by multiplying the physical or actual optical path length of the medium by 1/n.
As shown in Fig. 3 (a) , the spatial light modulator Sl is a movable multi-mirror including a plurality of mirror elements SEl, which are microscopic reflection elements. Each of the mirror elements SEl is movable and has a reflection surface. In each mirror element SEl, the orientation of the reflection surface, that is, the inclination angle and inclination direction of the reflection surface is independently driven and controlled by a spatial light modulator (SLM) drive unit 26, which is controlled by a control unit 20. Each mirror element SEl is continuously rotatable by a desired rotation angle about two rotation axes that extend perpendicular to each other and parallel to the reflection surface. That is, the mirror elements SEl are each controllable so as to inline two- dimensionally along the reflection surface.
As shown in Fig. 3 (b) , one example of a drive mechanism for a mirror element SEl includes a rod member 41, which supports the mirror element SEl in a manner enabling inclination about two perpendicular axes in the reflection surface, a support substrate 42, which supports the rod member 41, four electrodes 43, which are arranged on the support substrate 42 so as to surround the rod member 41, and four electrodes (not shown) , which are arranged on the rear surface of the mirror element SEl facing toward the four electrodes 43. In this example, the spatial light modulator (SLM) drive unit 26 controls the potential difference between each of the four electrodes 43 and the corresponding electrode on the rear surface of the mirror element SEl to control the electrostatic force that acts between the electrodes so as to swing and incline mirror element SEl. This continuously controls the inclination angle of the mirror element SEl about the two perpendicular axes of the reflection surface within a predetermined variable range. The structure of the spatial light modulator Sl is disclosed, for example, in Japanese Laid-Open Patent Publication No. 2002-353105. The electrodes 43 shown in Fig. 3 (b) are arranged at the apexes (corners) of the rectangular mirror element SEl but may be arranged instead at a position corresponding to each side of the mirror element SEl.
The drive mechanism for the mirror element SEl is not limited to the structure of the present embodiment and any other mechanism may be used.
Here, the mirror elements SEl have square outlines and are flat but are not limited in such a manner. However, from the viewpoint of light utilization efficiency, it is preferable that the mirror elements SEl have outlines enabling an arrangement that eliminates gaps. It is also preferable that the gap between adjacent mirror elements SEl be minimized. Further, it is preferable that the mirror elements SEl be as small as possible so that fine changes can be made to the illumination conditions. Moreover, the reflection surfaces of the mirror elements SEl do not have to be planar surfaces and may be curved surfaces such as concave surfaces and convex surfaces.
The spatial light modulator Sl is capable of performing modified illumination, which forms a desired light intensity distribution that is circular, annular, dipole-shaped, quadrupole-shaped, or the like at a pupil position (pupil surface) of an illumination optical system. Specifically, a storage unit 22, which is accessible by the control unit 20, stores information, for example, in the form of a lookup table, on the inclination angle and inclination direction of the mirror elements SEl in the spatial light modulator Sl to form a light intensity distribution that is circular, annular, dipole-shaped, quadrupole-shaped, or the like at the pupil position of the illumination optical system when the incident light has no light intensity variations.
When detecting variations (non-uniformity) in the light intensity of the illumination light at a position in the optical path extending from the light source 1 to the spatial light modulator Sl based on the detection result of the detection unit (30 to 33) , to form light distributions that are circular, annular, dipole-shaped, quadrupole- shaped, or the like, the control unit 20 performs an optimization calculation to uniform the light distribution and calculates a corrected inclination angle and corrected inclination direction of each mirror element SEl. Based on the corrected inclination angle and inclination direction, the control unit 20 sends a control signal to the SLM drive unit 26, and the SLM drive unit 26 controls the inclination angle and inclination direction of each mirror element SEl to form the desired light intensity distribution at the pupil position of the illumination optical system or a position optically conjugated with the pupil position.
The correction operation will now be discussed in more detail. For each of the plurality of mirror elements SEl in the spatial light modulator Sl of the spatial light modulation unit SMl, the control unit 20 obtains the intensity of the light entering the mirror element SEl from the light intensity distribution in the cross-section of the illumination light detected by the detection unit (30 to 33) . Then, the control unit 20 calculates the light intensity distribution in the light distribution shape formed at the pupil position of the illumination optical system using the information stored in the storage unit 22 on- the inclination angle and inclination direction of each mirror element SEl and the information related to the intensity of the light entering each mirror element SEl.
Further, the control unit 20 obtains the corrected inclination angle and corrected inclination direction of each mirror element SEl, for example, though an appropriate minimization process, such as least squares or attenuation least squares using the inclination angle and inclination direction of each mirror element SEl as a variable and the light intensity distribution in the light intensity distribution shape that is to be formed at a pupil position in the illumination optical system as a target value. The correction operation does not use a Fourier transform that would require time for calculation. Thus, the inclination angle and inclination direction of each mirror element SEl is quickly calculated.
Further, when the light entering the spatial light modulation unit SMl inclines from a predetermined initial state, displacement of the light distribution shaped formed at the pupil position of the illumination optical system would occur in the pupil plane. Therefore, in the present embodiment, the control unit 20 corrects the inclination angles of the plurality of mirror elements SEl in the spatial light modulator Sl of the spatial light modulation unit SMl based on information on angle deviations of the illumination light detected by the detection unit (30 to 33) .
Specifically, the control unit 20 uses the information on the angle deviation of the illumination light detected by the detection unit (30 to 33) to correct the inclination angle and inclination direction of each mirror element SEl stored in the storage unit 22 in the form of a lookup table. For example, when the angle deviation of the illumination light is θ, the angle deviation becomes 2Θ when the light is reflected by each mirror element SEl. The inclination angle of each mirror element SEl for correcting the angle deviation 2Θ of the reflection light is -θ. Thus, the control unit 20 adds the correction angle -θ to the information on the inclination angle and inclination direction of each mirror element SEl stored in the form of a lookup table to obtain the corrected inclination angle and corrected inclination direction of each mirror element SEl. This correction operation enables the elimination of an optical axis inclination correction mechanism that would be arranged between the light source and the main body of the exposure apparatus .
In the present embodiment, the spatial light modulator Sl is controlled so that the light distribution shape of incident light is transformed from a rectangular shape to an annular shape. The light that passes through the spatial light modulation unit SMl enters the afocal lens 5 (relay optical system) and forms an annular light intensity distribution near a pupil position of the afocal lens 5 (and consequently the illumination optical system) or near the pupil position. The afocal lens 5 is an afocal system (non- focal optical system) in which its front focal point is located at the same position as the spatial light modulator Sl and its rear focal point is located at the same position as a predetermined plane 6, which is indicated by broken lines in the drawing. Accordingly, the light entering the spatial light modulator Sl forms an annular light intensity distribution at the pupil position of the afocal lens 5 and is then emitted from the afocal lens 5 as parallel light.
In an optical path between a front lens group 5a and rear lens group 5b of the afocal lens 5, a conical axicon system 87, a first cylindrical lens pair 88, and a second cylindrical lens pair 89 are arranged at or near the pupil position of the illumination optical system from the light source side.
Fig. 4 is a schematic diagram showing the conical axicon system 87, which is arranged at or near the pupil position of the illumination optical system. The conical axicon system 87 includes from the light source side a first prism 87a and a second prism 87b. The first prism 87a includes a concave, conical refraction surface (concave refraction surface) . The second prism 87b includes a convex, conical refraction surface (convex refraction surface) that is formed to be complement so as to enable contact with the concave, conical refraction surface of the first prism 87a. The first prism 87a is arranged so that its planar surface faces toward the light source side and its concave, conical refraction surface faces toward a mask M. The second prism 87b is arranged so that its convex, conical refraction surface faces toward the light source and its planar surface faces toward the mask M.
At least either one of the first prism 87a and the second prism 87b is movable along the optical axis AX so that the interval between the concave, conical refraction surface of the first prism 87a and the convex, conical refraction surface of the second prism 87b (hereinafter, referred to as the interval of the conical axicon system 87) is variable. In a state in which the concave, conical refraction surface of the first prism 87a and the convex, conical refraction surface of the second prism 87b are in contact with each other, the conical axicon system 87 functions as a plane parallel plate and does not affect an annular secondary light source that is formed by a micro- lens array 10, which will be described later. However, when separating the concave, conical refraction surface of the first prism 87a and the convex, conical refraction surface of the second prism 87b, the conical axicon system 87 functions as a so-called beam expander. Accordingly, when varying the interval in the conical axicon system 87, the incident angle of the light entering the predetermined plane 6, which is indicated by the broken line in Fig. 1, is varied.
Fig. 5 includes drawings illustrating the operation of the conical axicon system 87 with respect to a secondary light source formed through annular illumination. Fig. 5 (a) is a drawing showing an annular secondary light source 130a that is in the smallest state in which the interval in the conical axicon system 87 is zero and the focal length of a zoom lens 7, which will be described later, is set to a minimum value (hereinafter, referred to as the "standard state") . Fig. 5(b) is a drawing showing an annular secondary light source 130b formed in a state in which the interval in the conical axicon system 87 is increased to a predetermined value (the focal length of the zoom lens 7 is invariable) . The width of the secondary light source 130b in the radial direction (a value that is 1/2 the difference between the outer diameter and inner diameter, indicated by the double- headed arrows in the drawings) is the same as the width of the secondary light source 130a in the radial direction. When increasing the interval in the conical axicon system 87 from zero to a predetermined value, the outer diameter and inner diameter of the annular secondary light source can be increased from the standard state while maintaining the same radial width of the annular secondary light source as the standard state. That is, the conical axicon system 87 functions to vary the annular ratio (inner diameter / outer diameter) and size (outer diameter) of the secondary light source without changing the radial width of the annular secondary light source.
Fig. 6 is a schematic diagram showing the first cylindrical lens pair 88 and the second cylindrical lens pair 89 arranged in an optical path between the front lens group 5a and rear lens group 5b of the afocal lens 5. As shown in Fig. 6, the first cylindrical lens pair 88 includes from the light source side a first cylindrical negative lens 88a, which has, for example, negative refractive power in a YZ plane and no refractive power in an XY plane, and a first cylindrical positive lens 88b, which has positive refraction power in a YZ plane and no refractive power in an XY plane. The second cylindrical lens pair 89 includes from the light source side a second cylindrical negative lens 89a, which has, for example, negative refractive power in an XY plane and no refractive power in a YZ plane, and a second cylindrical positive lens 89b, which has positive refraction power in an XY plane and no refractive power in a YZ plane.
The first cylindrical negative lens 88a and the first cylindrical positive lens 88b are formed so as to rotate integrally about the optical axis AX. In the same manner, the second cylindrical negative lens 89a and the second cylindrical positive lens 89b are formed so as to rotate integrally about the optical axis AX. The first cylindrical lens pair 88 functions as a beam expander having power in the Z direction, and the second cylindrical lens pair 89 functions as a beam expander having power in the X direction. Further, in the present embodiment, the first cylindrical lens pair 88 and the second cylindrical lens pair 89 are set to have the same power. Accordingly, the light that passes through the first cylindrical lens pair 88 and the second cylindrical lens pair 89 is subjected to a magnification effect resulting from the same powers in the Z direction and X direction.
The light that passes through the afocal lens 5 enters the zoom lens 7 , which varies the σ value. The predetermined plane 6 is located at or near the front focal point of the zoom lens 7, and the micro-lens array 10, which will be described later, is arranged at or near the rear focal plane of the zoom lens 7. Thus, the zoom lens 7 arranges the predetermined plane 6 and the incidence surface of the micro-lens array 10 to substantially satisfy an optical Fourier transform relationship and consequently arranges the pupil position of the afocal lens 5 and the incidence surface of the micro-lens array 10 to be generally conjugated with each other. Accordingly, in the same manner as the pupil position of the afocal lens 5, for example, an annular illumination field is formed about the optical axis AX on the incidence surface of the micro-lens array 10. The entire shape of the annular illumination field varies in similarity in a manner dependent on the focal length of the zoom lens 7. That is, the size of the secondary light source (planar light source) formed at a position optically conjugated to the pupil position of the illumination optical system by the micro-lens array 10 is varied in similarity in a manner dependent on the focal length of the zoom lens 7 while keeping the amount of the illumination light emitted from the laser light source 1 substantially constant.
Fig. 7 includes drawings illustrating the operation of the zoom lens 7 with respect to the secondary light source formed by the annular illumination. Fig. 7 (a) is a drawing showing the annular secondary light source 130a that is formed in the standard state, and Fig. 7 (b) is a drawing showing an annular secondary light source 130c that is formed in a state in which the focal length of the zoom lens 7 is increased to a predetermined value (the interval of the conical axicon system 87 is invariable) . Referring to Figs. 7 (a) and 7 (b) , when increasing the focal length of the zoom lens 7 from the minimum value to a predetermined value, the annular secondary light source 130a is transformed to the secondary light source 130c by magnifying the entire shape of the annular secondary light source 130a in similarity while keeping the amount of illumination light substantially constant. That is, the zoom lens 7 functions to vary the width and size (outer diameter) of the annular secondary light source without changing the annular ratio of the annular secondary light source. The light that passes through the zoom lens 7 enters a beam splitter 8. The light reflected by the beam splitter 8 enters a CCD imaging unit 9 (detection unit) . The CCD imaging unit 9 sends an image signal to the control unit 20. The beam splitter 8, which is arranged in an optical path between the spatial light modulator and irradiated plane, is also referred to as an optical path branching member, which branches off some of the illumination light from the optical path and guides the branched light to an information acquisition unit. The light that passes through the beam splitter 8 enters the micro-lens array 10, which serves as an optical integrator. The incidence angle of the light entering the micro-lens array 10 varies in accordance with changes in the interval in the conical axicon system 87 in the same manner as the angle of the light entering the predetermined plane 6. The micro-lens array 10 is an optical device formed by a matrix of a plurality of densely arranged micro lenses having positive refractive power. Each micro lens of the micro-lens array 10 includes a rectangular cross-section, which is in similarity with the shape of the illumination field that is to be formed on the mask M ( (i.e., a plane to be irradiated or an irradiated plane) . (consequently, the shape of the exposure region that is to be formed on a wafer W) . The light entering the micro-lens array 10 is divided two-dimensionally by the plurality of micro lens so as to form at a rear focal plane (consequently, an illumination pupil) a secondary light source having generally the same light distribution as the illumination field formed by the light entering micro-lens array 10, that is, a secondary light source, which is formed by a substantially annular planar light source extending about the optical axis AX.
Since in the present example the mask M located on an irradiated plane is illuminated by Kδhler illumination, the plane on which this secondary light source is formed is a plane conjugate with an aperture stop of the projection optical system PL and can be called an illumination pupil plane of the illumination apparatus IL. Typically, the irradiated plane (the plane on which the mask M is arranged or the surface on which the wafer W is arranged) becomes an optical Fourier transform plane with respect to the illumination pupil plane. The pupil intensity distribution is a light intensity distribution on the illumination pupil plane of the illumination apparatus IL or on a plane conjugate with the illumination pupil plane. However, when the number of wavefront divisions by the micro-lens array 10 is large, an overall luminance distribution formed on the entrance surface of the micro-lens array 10 shows a high correlation with the overall intensity distribution of the entire secondary light source (pupil intensity distribution) , and, therefore, the light intensity distributions on the entrance surface of the micro-lens array 10 and on a plane conjugate with the entrance surface can also be called pupil intensity distributions. Concerning such micro-lens array 10, reference can be made to U.S. Pat. No. 6,913,373, and U.S. Pat. Application No. 2008/0074631. The micro-lens array 10 can be termed a micro fly's eye lens.
The light from the annular secondary light source formed on the rear focal plane of the micro-lens array 10 passes through an aperture stop 12, which can be arranged at or near the rear focal plane (emission plane) of the micro- lens array 10. The aperture stop 12 is formed, for example, by an iris stop or the like that limits the size of the secondary light source formed on the rear focal plane of the micro-lens array 10 to a predetermined size. The light beams that pass through the aperture stop 12 passes through a beam splitter 14 and a condenser lens 17a and illuminates a mask blind MB in a superimposed manner. The light reflected by the beam splitter 14 passes through a lens 15 and enters a photodiode 16. The photodiode 16 sends a detection signal to the control unit 20. The beam splitter 14, which is arranged in the optical path between the spatial light modulator and irradiated plane, is also referred to as an optical path branching member, which branches off some of the illumination light from the optical path and guides the branched light to an information acquisition unit.
A rectangular illumination field, which is in accordance with the shape and focal length of each micro lens forming the micro-lens array 10, is formed in the mask blind MB, which serves as an illumination field stop. The light beams that pass through a rectangular aperture of the mask blind MB is subjected to a light converging operation of an imaging optical system 17b and then reflected by a reflection mirror 19 to illuminate in a superimposing manner the mask M, on which a predetermined pattern is formed. That is, the imaging optical system 17b forms an image of the rectangular aperture in the mask blind MB on the mask M, which is placed on a mask stage MS. The laser light source 1 to reflection mirror 19, the CCD imaging units 32 and 33, and the spatial light modulation unit SMl form an illumination optical system.
The light that passes through the pattern on the mask M forms a pattern image of the mask M on the wafer W, which is a photosensitive substrate. In this manner, the pattern of the mask M is sequentially exposed onto each exposure region in the mask by performing batch exposure or scan exposure while two-dimensionally drive-controlling the wafer W on a wafer stage WS in a plane that is orthogonal to the optical axis AX of the projection optical system PL.
In the exposure apparatus of the present embodiment, the control unit 20 detects in predetermined time intervals the light intensity distribution (information related to light intensity distribution) at the pupil position of the illumination optical system or a position optically conjugated with the pupil position based on the detection signal from the CCD imaging unit 9. When the desired light intensity distribution is not formed at the pupil position of the illumination optical system or when variations (non- uniformity) in the light intensity is detected in the light distribution shape, the control unit 20 corrects the optimization calculation, which is performed by the control unit 20, for the inclination angle and inclination direction of each mirror element SEl based on the detection results of the CCD imaging units 32 and 33. More specifically, based on the detection results of the CCD imaging units 32 and 33, the control unit 20 performs an optimization calculation so that the light intensity becomes uniform in the light distribution shape on the pupil plane of the illumination optical system. However, as time elapses, changes take place in the optical characteristics of the illumination optical system. This may result in the light intensity becoming nonuniform in the light distribution shape at the pupil position of the illumination optical system. Accordingly, the control unit 20 corrects the optimization calculation based on the detection result of the CCD imaging unit 9. Then, the control unit 20 adjusts the inclination angle and inclination direction of each mirror element SEl through the corrected optimization calculation based on the detection results of the CCD imaging units 32 and 33. Based on the adjusted inclination angle and inclination direction, the control unit 20 controls the SLM drive unit 26 to control the inclination angle and inclination direction of each mirror element SEl and form the desired light distribution shape at the pupil position of the illumination optical system or a position optically conjugated with the pupil position. The exposure apparatus of the present embodiment shown in Fig. 1 is arranged separately from a movable exposure stage (wafer stage WS) , which holds a processed substrate such as the wafer W. A CCD imaging unit 39 (detection unit) is arranged on a measurement stage, which supports various measurement members and sensors. Based on light that passes through both of the illumination optical system and the projection optical system, the CCD imaging unit 39 detects the light intensity distribution at the pupil position of the illumination optical system (projection optical system) and a position optically conjugated with the pupil position and sends the detection result to the control unit 20. The employment of the CCD imaging unit 39 enables correction of influences resulting from optical characteristic variations that occur as time elapses in the projection optical system in addition to the illumination optical system. Such a CCD imaging unit 39 is disclosed, for example, in U.S. Patent Application Publication No. 2008/0030707. An exposure apparatus including such a measurement stage is disclosed, for example, in Japanese Laid-Open Patent Publication No. 11-135400.
The CCD imaging unit 9, together with one or both of the photodiode 16 and the CCD imaging unit 39 when necessary, may also be referred to as an information acquisition unit which acquires information related to the light intensity distribution.
In the exposure apparatus of the present embodiment, the inclination angle and inclination direction of each mirror element in the spatial light modulator, which obtains the desired light intensity distribution at the pupil position of the illumination optical system or a position optically conjugated with the pupil position, is adjusted by the optimization calculation based on the detection results of the CCD imaging units 32 and 33. Thus, in comparison with when detecting the light intensity distribution at the pupil position of the illumination optical system and calculating the optical inclination angle and inclination direction of each mirror element SEl in the spatial light modulator Sl based on the detection result, the inclination angle and inclination direction of each mirror element SEl can be obtained with less calculations. This enables the desired light intensity distribution to be easily formed at the pupil position of the illumination optical system or a position optically conjugated with the pupil position. Further, the light intensity distribution at the pupil position of the illumination optical system is detected at predetermined time intervals. Based on this detection result, the optimization calculation, which is based on the detection result of the CCD imaging units 32 and 33, is corrected. This ensures accurate optimization calculations that are based on the detection result of the CCD imaging units 32 and 33. Accordingly, mask patterns may be exposed into wafers with a high resolution and satisfactory throughput .
The above-described embodiment uses a single spatial light modulator. However, a plurality of spatial light modulators may be used. A modification using a plurality of spatial light modulators will now be described with reference to Fig. 8.
Fig. 8 shows a spatial light modulation unit SM2 arranged at the position where the spatial light modulation unit SMl shown in Fig. 1 is located, that is, in the optical path between the beam splitter 3 and the afocal lens 5. Fig. 8 shows only the optical path between the beam splitter 3 and the afocal lens 5.
The spatial light modulation unit SM2 includes a divisional light guide member, which divides the incident light into two lights (generally, a plurality of lights) and then guides the first light to a first spatial light modulator S2 and the second light to a second spatial light modulator S3.
In the modification of Fig. 8, a prism P2, which is shaped as a triangular prism having a triangular cross- section along a YZ plane, is used as the divisional light guide member. The prism P2 includes two side surfaces PS3 and PS4, which are symmetric to a plane lying along the optical axis and being parallel to a YZ plane. The side surface PS3 functions as a reflection surface R21 that reflects the incident light toward a plurality of mirror elements in the first spatial light modulator S2. The side surface PS4 functions as a reflection surface R31 that reflects the incident light toward a plurality of mirror elements in the second spatial light modulator S3. The prism P2 divides incident light into two lights along the ridgelines of the reflection surfaces R21 and R31.
In other words, the prism P2, which functions as the divisional light guide member, includes a first deflection surface R21, which deflects the incident light toward the first spatial light modulator S2, and a deflection surface R31, which deflects the incident light toward the second spatial light modulator S3. Further, the prism P2 divides the incident light into a first light and a second light along the ridgelines of the first deflection surface R21 and the second deflection surface R31. The light that reaches the first spatial light modulator S2 is reflected by a reflection surface R22 (third deflection surface) of a planar reflection mirror PS5 and emitted out of the spatial light modulation unit SM2. The light that reaches the second spatial light modulator S3 is reflected by a reflection surface R32 (fourth deflection surface) of a planar reflection mirror PSβ and emitted out of the spatial light modulation unit SM2.
The structures of the first and second spatial light modulators S2 and S3 are the same as the spatial light modulator Sl described above and thus will not be described here.
When using the divisional light guide member P2, which divides incident light into a plurality of lights and guides the divided lights to the spatial light modulators S2 and S3, when the light entering the divisional light guide member P2 is displaced, the illuminance ratio of the light guided to the spatial light modulators S2 and S3 changes. As a result, the light intensity distribution formed at the pupil position of the illumination optical system may not be desirable. However, in this modification, the detection unit (30 to 33) detects displacement of the light entering the divisional light guide member P2 and corrects light intensity distribution errors, which are caused by the light displacement, in the light distribution shape formed at the pupil position of the illumination optical system by correcting the inclination angle and inclination direction of each mirror element in the spatial light modulators S2 and S3. In the exposure apparatus of the above-described embodiment, a spatial light modulator that enables the orientation of two-dimensionally arranged reflection surfaces to be separately controlled is used as the spatial light modulator including a plurality of two-dimensionally arranged, separately controlled reflection elements. Examples of such a spatial light modulator are disclosed in Japanese National Phase Laid-Open Patent Publication No. 10- 503300 and its corresponding European Patent Publication No. 779530, Japanese Laid-Open Patent Publication No. 2004-78136 and its corresponding U.S. Patent No. 6,900,915, Japanese National Phase Laid-Open Patent Publication No. 2006-524349 and its corresponding U.S. Patent No. 7,095,546, and Japanese Laid-Open Patent Publication No. 2006-113437. In these spatial light modulators, light that has passed through each reflection surface of the spatial light modulator enters a distribution formation optical system at a predetermined angle and forms a predetermined light intensity distribution on an illumination pupil plane in correspondence with a control signal sent to the plurality of optical elements.
Further, as the spatial light modulator, for example, a spatial light modulator enabling the height of two- dimensionally arranged reflection surfaces to be separately controlled may be used. Examples of such a spatial light modulator are disclosed in Japanese Laid-Open Patent Publication No. 6-281869 and its corresponding U.S. Patent No. 5,312,513 and Japanese National Phase Laid-Open Patent Publication No. 2004-520618 and its corresponding U.S.
Patent No. 6,885,493 in Fig. Id. In these spatial light modulators, the formation of a two-dimensional height distribution affects incident light in the same manner as a diffraction plane.
The above-described spatial light modulator including a plurality of two-dimensionally arranged reflection surfaces may be modified in accordance with the disclosures of, for example, Japanese National Phase Laid-Open Patent Publication No. 2006-513442 and its corresponding U.S. Patent No. 6,891,655 and Japanese National Phase Laid-Open Patent Publication No. 2005-524112 and its corresponding U.S. Patent Application Publication No. 2005/0095749.
In the exposure apparatus of the above-described embodiment, an ArF excimer laser light source or a KrF excimer laser light source is used. However, an F2 laser light source may be used instead.
In the exposure apparatus of the above-described embodiment and modification, the spatial light modulator may be controlled as described below.
A case in which the control is executed to form a specific light intensity distribution (hereafter, referred to as the first pupil intensity distribution) at the pupil position of the illumination optical system or a position optically conjugated with the pupil position will be discussed. Prior to actual exposure, the correction procedures described below are performed.
First, the first CCD imaging unit 32 and second CCD imaging unit 33, which serve as a detection unit, are used to measure the incidence angle of the light directed toward the spatial light modulator Sl (S2 and S3) and the illuminance distribution in the cross-section of the light. Then, the detection unit sends the measurement result to the control unit 20.
Based on information of the inclination angle and inclination direction of each mirror element in the spatial light modulator Sl that is read from the storage unit 22 to generate the first pupil intensity distribution and correction information of the inclination angle and inclination direction of each mirror element SEl that can be calculated from the measurement result of the detection unit, the control unit 20 sends a control signal to the SLM drive unit 26. The SLM drive unit 26 sets the inclination angle and inclination direction of each mirror element based on the control signal from the SLM drive unit 26.
After the setting, the CCD imaging unit 39 measures the light intensity distribution at a position conjugated with the pupil position of the projection optical system and sends the measurement results to the control unit 20. At the same time, the CCD imaging unit 9 measures the light intensity distribution formed on the incidence surface of the optical integrator 10 and sends the measurement result to the control unit 20. During the measurement, the imaging unit 39 uses as the mask M a light transmissive substrate having no pattern.
The control unit 20 compares the light intensity distribution measured by the imaging unit 39 and the first pupil intensity distribution that is to be formed. When the intensity distributions are the same (the difference therebetween being within a tolerable range) , the measurement result of the CCD imaging unit 9 is stored in the storage unit 22 in association with the first pupil intensity distribution. When the intensity distributions are not the same (the difference therebetween being outside the tolerable range) , the control unit 20 performs the procedures for resetting the inclination angle and inclination direction of each mirror element Sl in the spatial light modulator Sl, and the CCD imaging unit 39 repeats the measurement procedures.
In addition to the first pupil intensity distribution, when there are other types of pupil intensity distribution used for actual exposure, the correction procedures are performed for each of the pupil intensity distributions (e.g., second pupil intensity distribution and third pupil intensity distribution) .
During the actual exposure, the first and second CCD imaging units 32 and 33 measure the incidence angle of the light entering the SLM and the illuminance distribution in the cross-section of the light just before exposing a single lot of wafers. Based on the measurement result, the control unit 20 sets the inclination angle and inclination direction of each mirror element SEl in the spatial light modulator Sl with the SLM drive unit 26. In this state, the CCD imaging unit 9 measures the light intensity distribution in the cross-section of the light that enters the optical integrator 10. The measurement result is compared with the measurement result associated with the first pupil intensity distribution stored in the storage unit 22. When the measurement results are the same (the difference therebetween being within the tolerable range) , exposure is actually performed. When the measurement results are not the same (the difference therebetween being outside the tolerable range) , the inclination angle and inclination direction of the mirror elements SEl in the spatial light modulator Sl are adjusted with the SLM drive unit 26.
In these procedures, measurements are taken with the CCD imaging unit 9, which is always capable of performing measurements. Thus, the throughput is not decreased. When performing measurements with the CCD imaging unit 39, the CCD imaging unit 39 must be located at the light emission side of the projection optical system. Thus, during a measurement, the wafer stage cannot be moved to the light emission side of the projection optical system. This decreases throughput during the measurement.
A method for manufacturing a device serving using the exposure apparatus of the above-described embodiment will now be discussed with reference to the flowchart of Fig. 9. As shown in the flowchart, in a semiconductor manufacturing step, a metal film is vapor-deposited onto a wafer W, which becomes a substrate for a semiconductor device (step S40), and photoresist, which is a photosensitive material, is applied to the metal film (step S42) . Then, a pattern formed on a reticle (mask) is transferred onto each shot region in the wafer W with the exposure apparatus of the embodiment (step S44: exposure step) . The wafer W that has undergone the transfer is developed, that is, the photoresist on which the pattern has been transferred is developed (step S46: development step) . Subsequently, a resist pattern formed on a surface of the wafer W is used as a mask to perform processing such as etching on the surface of the wafer W (step S48: processing step) .
The resist pattern is a photoresist layer including recesses and projections having shapes corresponding to the pattern transferred by the exposure apparatus of the embodiment. The recesses extend through the photoresist layer. In step S48, the surface of the wafer W is processed through the resist pattern. The processing performed on the surface of the wafer W in step S48 includes, for example, at least either one of etching and metal film formation. In step S44, the exposure apparatus of the embodiment uses the wafer W to which photoresist is applied as a photosensitive substrate, or plate P, to transfer the pattern.
Fig. 10 is a flowchart showing the manufacturing of a liquid crystal device such as a liquid crystal display device. As shown in the flowchart, to manufacture a liquid crystal device, a pattern formation step (step S50), a color filter formation step (step S52) , a cell assembly step (step S54), and a module assembly step (step S56) are sequentially performed.
In the pattern formation step of step S50, the exposure apparatus of the embodiment forms a predetermined pattern such as a circuit pattern and an electrode pattern on the plate P, which is a glass substrate to which the photoresist is applied (or the wafer W to which the photoresist is applied) . The pattern formation step includes an exposure step for transferring a pattern onto a photoresist layer with the exposure apparatus of the embodiment, a development step for developing the plate P onto which the pattern has been transferred, that is, for developing the photoresist layer on the glass substrate, and a processing step for processing the surface of the glass substrate through the developed photoresist layer.
In the color filter formation step of step S52, a color filter is formed in which a plurality of sets of three dots corresponding to R (Red) , G (Green) , and B (Blue) are arranged in a matrix or in which a plurality of sets of three stripe filters of R, G, and B are arranged extending in a horizontal scanning line direction.
In the cell assembling step of step S54, a liquid crystal panel (liquid crystal cell) is assembled using the glass substrate having the predetermined pattern obtained in step S50 and the color filter obtained in step S52. More specifically, a liquid crystal panel is manufactured by injecting liquid crystal between the glass substrate and the color filter.
In a module assembling step of step S56, components such as electric circuits and a backlight for enabling a display operation of the assembled liquid crystal panel are mounted on the liquid crystal panel.
As the above-described CCD imaging unit, for example, an imaging unit with a CMOS image sensor, a photodiode array, or a camera tube may be used.
In the foregoing embodiments, it is also possible to apply a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with a medium having the refractive index larger than 1.1 (typically, a liquid), which is so called a liquid immersion method. In this case, it is possible to adopt one of the following techniques as a technique of filing the interior of the optical path between the projection optical system and the photosensitive substrate with the liquid: the technique of locally filling the optical path with the liquid as disclosed in International Publication WO99/49504; the technique of moving a stage holding the substrate to be exposed, in a liquid bath as disclosed in Japanese Patent Application Laid-open No. 6-124873; the technique of forming a liquid bath of a predetermined depth on a stage and holding the substrate therein as disclosed in Japanese Patent Application Laid-open No. 10-303114, and so on.
In the foregoing embodiment, it is also possible to apply the so-called polarized illumination method disclosed in U. S Pat. Published Application Nos . 2006/0203214, 2006/0170901, and 2007/0146676.
The application of the present invention is not limited to an exposure apparatus for manufacturing a semiconductor device. The present invention may also be applied to exposure apparatuses for a liquid crystal display device formed on a rectangular glass plate or for a display device such as a plasma display device. The present invention may also be widely applied to exposure apparatuses that manufacture various types of devices, such as an imaging device (CCD and the like) , a micro-machine, a thin- film magnetic head, and a DNA chip. Further, the present invention may be applied to an exposure process (exposure apparatus) used when manufacturing various types of devices to form a mask (photomask, reticle, etc. ) including a mask pattern during lithography.

Claims

1. An illumination optical system which illuminates an irradiated plane with illumination light provided from a light source, the illumination optical system comprising: a spatial light modulator which is arranged in an optical path of the illumination optical system and cooperates with part of the illumination optical system to form a desired light intensity distribution at a pupil position of the illumination optical system or a position optically conjugated with the pupil position; a detection unit which detects the light intensity distribution of the illumination light at a position in an optical path extending from the light source to the spatial light modulator, with the detection unit including a light receiving surface which receives some of the illumination light; and a control unit which controls the spatial light modulator based on the light intensity distribution detected by the detection unit.
2. The illumination optical system according to claim 1, wherein: the illumination light includes a plurality of light pulses; the light receiving surface of the detection unit receives the light intensity distribution of the illumination light formed based on the light pulses, every one or more light pulses; and the control unit controls the spatial light modulator based on a plurality of the light intensity distributions of the illumination light detected for every one or more light pulses .
3. The illumination optical system according to claim 1 or 2, further comprising: an information acquisition unit which acquires information on the light intensity distribution at the pupil position of the illumination optical system or the position optically conjugated with the pupil position; and wherein the control unit corrects the controlling executed by the control unit based on the light intensity distribution at the pupil position of the illumination optical system or the position optically conjugated with the pupil position that is acquired by the information acquisition unit.
4. The illumination optical system according to claim 3, further comprising: an optical path branching member which is arranged in an optical path between the spatial light modulator and the irradiated plane, with the optical path branching member branching off some of the illumination light from the optical path and guiding the branched off light to the information acquisition unit.
5. The illumination optical system according to claim 3, wherein the information acquisition unit acquires information on the light intensity distribution at the pupil position of the illumination optical system or the position optically conjugated with the pupil position based on the illumination light that has passed through the irradiated plane .
6. The illumination optical system according to any one of claims 1 to 5, wherein the spatial light modulator includes : a first spatial light modulator which cooperates with the part of the illumination optical system to form a first light intensity distribution at the pupil position of the illumination optical system or the position optically conjugated with the pupil position; and a second spatial light modulator which cooperates with the part of the illumination optical system to form a second light intensity distribution at the pupil position of the illumination optical system or the position optically conjugated with the pupil position.
7. The illumination optical system according to claim 6, further comprising: a divisional light guide member which is arranged in an optical path between the light source and the spatial light modulator, with the divisional light guide member dividing the illumination light from the light source and guiding the divided light to the first and second spatial light modulators.
8. The illumination optical system according to claim I1 wherein the detection unit detects the light intensity distribution of the illumination light at a position in an optical path extending from the light source to the divisional light guide member.
9. The illumination optical system according to any one of claims 1 to 8, wherein: the detection unit detects a position on the light receiving surface at which the illumination light falls; and the control unit controls the spatial light modulator based on the position on the light receiving surface at which the illumination light falls.
10. The illumination optical system according to any one of claims 1 to 9, wherein: the detection unit includes an incidence angle detection unit which detects incidence angle of the illumination light entering the spatial light modulator; and the control unit controls the spatial light modulator based on the incidence angle detected by the incidence angle detection unit.
11. The illumination optical system according to any one of claims 1 to 10, wherein: the spatial light modulator includes a plurality of two-dimensionally arranged elements; and the plurality of two-dimensionally arranged elements are controllable independently from each other to perform spatial optical modulation on incident light before emitting the light.
12. The illumination optical system according to claim 11, wherein: the plurality of elements each include a reflection surface; and the reflection surfaces of the plurality of elements are controllable independently from each other to perform spatial optical modulation on incident light before emitting the light.
13. The illumination optical system according to claim 12, wherein orientations of the reflection surfaces are controllable independently from each other.
14. An exposure apparatus which transfers a predetermined pattern onto a photosensitive substrate, the exposure apparatus comprising: the illumination optical system according to any one of claims 1 to 13 which illuminates the pattern that is arranged on an irradiated plane.
15. A method for manufacturing a device comprising: exposing a predetermined pattern onto a photosensitive substrate using the exposure apparatus according to claim 14; developing the photosensitive substrate onto which the pattern has been transferred to form a mask layer shaped in correspondence with the pattern on a surface of the photosensitive substrate; and processing the surface of the photosensitive substrate through the mask layer.
EP08840498A 2007-10-16 2008-09-12 Illumination optical system, exposure apparatus, and device manufacturing method Withdrawn EP2179329A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007269188 2007-10-16
JP2008173244 2008-07-02
PCT/JP2008/066933 WO2009050977A1 (en) 2007-10-16 2008-09-12 Illumination optical system, exposure apparatus, and device manufacturing method

Publications (1)

Publication Number Publication Date
EP2179329A1 true EP2179329A1 (en) 2010-04-28

Family

ID=40138389

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08840498A Withdrawn EP2179329A1 (en) 2007-10-16 2008-09-12 Illumination optical system, exposure apparatus, and device manufacturing method

Country Status (9)

Country Link
US (1) US8520291B2 (en)
EP (1) EP2179329A1 (en)
JP (1) JP5287114B2 (en)
KR (1) KR101546987B1 (en)
CN (1) CN101681125B (en)
HK (1) HK1139745A1 (en)
SG (2) SG10201602750RA (en)
TW (1) TWI456354B (en)
WO (1) WO2009050977A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012060099A1 (en) * 2010-11-04 2012-05-10 株式会社ニコン Light source adjustment method, exposure method, device manufacturing method, illumination optical system, and exposure device

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5267029B2 (en) 2007-10-12 2013-08-21 株式会社ニコン Illumination optical apparatus, exposure apparatus, and device manufacturing method
EP2179329A1 (en) 2007-10-16 2010-04-28 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
WO2009050976A1 (en) 2007-10-16 2009-04-23 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
NL1036334A1 (en) * 2007-12-28 2009-06-30 Asml Netherlands Bv SLM calibration.
WO2009128293A1 (en) * 2008-04-14 2009-10-22 株式会社ニコン Spatial light modulation unit, lighting optical system, exposure apparatus and method for manufacturing device
WO2009145048A1 (en) * 2008-05-28 2009-12-03 株式会社ニコン Inspection device and inspecting method for spatial light modulator, illuminating optical system, method for adjusting the illuminating optical system, exposure device, and device manufacturing method
JPWO2010024106A1 (en) * 2008-08-28 2012-01-26 株式会社ニコン Illumination optical system, exposure apparatus, and device manufacturing method
DE102009008644A1 (en) 2009-02-12 2010-11-18 Carl Zeiss Smt Ag Imaging optics and projection exposure system for microlithography with such an imaging optics
EP2443514A1 (en) * 2009-06-17 2012-04-25 ASML Netherlands B.V. Lithographic apparatus and method
JP5598733B2 (en) 2009-12-23 2014-10-01 株式会社ニコン Spatial light modulation unit, illumination optical system, exposure apparatus, and device manufacturing method
WO2011096453A1 (en) 2010-02-03 2011-08-11 株式会社ニコン Illumination optical device, illumination method, and exposure method and device
JP5842808B2 (en) * 2010-02-20 2016-01-13 株式会社ニコン How to adjust pupil intensity distribution
US20110205519A1 (en) 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
JP2012004465A (en) 2010-06-19 2012-01-05 Nikon Corp Illumination optical system, exposure equipment, and device manufacturing method
JP5807761B2 (en) * 2011-06-06 2015-11-10 株式会社ニコン Illumination method, illumination optical apparatus, and exposure apparatus
NL2008924A (en) * 2011-06-22 2013-01-02 Asml Netherlands Bv System and method to ensure source and image stability.
JP6103467B2 (en) * 2011-10-06 2017-03-29 株式会社ニコン Illumination optical system, illumination method, exposure apparatus, exposure method, and device manufacturing method
KR102170875B1 (en) * 2011-10-24 2020-10-28 가부시키가이샤 니콘 Illumination optical assembly, exposure apparatus, and device manufacturing method
JP5918858B2 (en) * 2011-11-15 2016-05-18 カール・ツァイス・エスエムティー・ゲーエムベーハー Light modulator and illumination system of microlithography projection exposure apparatus
DE102013201506A1 (en) 2012-02-17 2013-08-22 Carl Zeiss Smt Gmbh Optical component
DE102013201509A1 (en) * 2012-02-17 2013-08-22 Carl Zeiss Smt Gmbh Optical component
DE102012205181B4 (en) 2012-03-30 2015-09-24 Carl Zeiss Smt Gmbh Measuring device for measuring a lighting property
DE102013214459B4 (en) * 2013-07-24 2015-07-16 Carl Zeiss Smt Gmbh Optical system for a microlithographic projection exposure apparatus
JP6227347B2 (en) * 2013-09-25 2017-11-08 株式会社Screenホールディングス Exposure apparatus and optical apparatus
EP2876499B1 (en) * 2013-11-22 2017-05-24 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
CN111736162B (en) * 2020-08-04 2020-11-10 中国人民解放军国防科技大学 Laser illumination echo detection device and method for complex target
CN112255818B (en) * 2020-11-03 2022-06-03 广州立景创新科技有限公司 Imaging correction unit and imaging module
DE102021209734A1 (en) 2021-09-03 2022-09-22 Carl Zeiss Smt Gmbh Outcoupling device, method for diverting external radiation, illumination systems, device for providing and forwarding projection radiation for an illumination system and lithography system

Family Cites Families (217)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1034333B (en) 1955-04-20 1958-07-17 Erwin W Wartenberg Process for toughening glasses by immersing the heated glass bodies in cooling baths
EP0023231B1 (en) 1979-07-27 1982-08-11 Tabarelli, Werner, Dr. Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (en) 1980-01-24 1987-02-20 Dme HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4683420A (en) 1985-07-10 1987-07-28 Westinghouse Electric Corp. Acousto-optic system for testing high speed circuits
JP2527807B2 (en) * 1989-05-09 1996-08-28 住友大阪セメント株式会社 Optical associative identification device
US5153428A (en) 1990-06-15 1992-10-06 Hamamatsu Photonics K.K. Confocal laser scanning microscope having relay lens and a slit for removing stray light
US5251222A (en) 1991-04-01 1993-10-05 Teledyne Industries, Inc. Active multi-stage cavity sensor
JPH0513292A (en) * 1991-07-02 1993-01-22 Nikon Corp Exposure apparatus
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US5312513A (en) 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
US5383000A (en) 1992-11-24 1995-01-17 General Signal Corporation Partial coherence varier for microlithographic system
US5461410A (en) 1993-03-29 1995-10-24 Texas Instruments Incorporated Gray scale printing using spatial light modulators
US5815248A (en) 1993-04-22 1998-09-29 Nikon Corporation Illumination optical apparatus and method having a wavefront splitter and an optical integrator
EP0656555B1 (en) 1993-12-01 2003-03-19 Sharp Kabushiki Kaisha Display for 3D images
US5850300A (en) 1994-02-28 1998-12-15 Digital Optics Corporation Diffractive beam homogenizer having free-form fringes
US5815247A (en) 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
DE19535392A1 (en) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarization-rotating optical arrangement and microlithography projection exposure system with it
KR100505202B1 (en) 1995-09-27 2005-11-25 칼 짜이스 에스엠테 아게 Zoom device
RU2084941C1 (en) 1996-05-06 1997-07-20 Йелстаун Корпорейшн Н.В. Adaptive optical module
CN1144263C (en) 1996-11-28 2004-03-31 株式会社尼康 Aligner and method for exposure
JPH1116816A (en) 1997-06-25 1999-01-22 Nikon Corp Projection aligner, method for exposure with the device, and method for manufacturing circuit device using the device
JP4210871B2 (en) 1997-10-31 2009-01-21 株式会社ニコン Exposure equipment
AU1175799A (en) 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
WO1999031716A1 (en) 1997-12-16 1999-06-24 Nikon Corporation Aligner, exposure method and method of manufacturing device
TW449672B (en) 1997-12-25 2001-08-11 Nippon Kogaku Kk Process and apparatus for manufacturing photomask and method of manufacturing the same
AU2747899A (en) 1998-03-20 1999-10-18 Nikon Corporation Photomask and projection exposure system
WO1999050712A1 (en) 1998-03-26 1999-10-07 Nikon Corporation Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device
WO1999066370A1 (en) 1998-06-17 1999-12-23 Nikon Corporation Method for producing mask
AU4930099A (en) 1998-08-18 2000-03-14 Nikon Corporation Illuminator and projection exposure apparatus
US6466304B1 (en) 1998-10-22 2002-10-15 Asm Lithography B.V. Illumination device for projection system and method for fabricating
US6406148B1 (en) 1998-12-31 2002-06-18 Texas Instruments Incorporated Electronic color switching in field sequential video displays
AU4143000A (en) 1999-04-28 2000-11-17 Nikon Corporation Exposure method and apparatus
WO2001003170A1 (en) 1999-06-30 2001-01-11 Nikon Corporation Exposure method and device
DE10029938A1 (en) 1999-07-09 2001-07-05 Zeiss Carl Optical system for projection exposure device, includes optical element which consists of magnesium fluoride, as main constituent
US6280034B1 (en) 1999-07-30 2001-08-28 Philips Electronics North America Corporation Efficient two-panel projection system employing complementary illumination
AU5653699A (en) 1999-09-20 2001-04-24 Nikon Corporation Parallel link mechanism, exposure system and method of manufacturing the same, and method of manufacturing devices
WO2001027978A1 (en) 1999-10-07 2001-04-19 Nikon Corporation Substrate, stage device, method of driving stage, exposure system and exposure method
EP1109067B1 (en) 1999-12-13 2006-05-24 ASML Netherlands B.V. Illuminator
JP2005233979A (en) 2000-02-09 2005-09-02 Nikon Corp Catadioptric system
US7301605B2 (en) 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
GB0016453D0 (en) * 2000-07-04 2000-08-23 Hoffmann La Roche Pyrrole derivatives
KR100775796B1 (en) 2000-08-18 2007-11-12 가부시키가이샤 니콘 Optical element holding device
JP2002231619A (en) 2000-11-29 2002-08-16 Nikon Corp Optical illumination equipment and aligner equipped with the same
SE0100336L (en) 2001-02-05 2002-08-06 Micronic Laser Systems Ab Addressing method and apparatus using the same technical area
CN1491427A (en) 2001-02-06 2004-04-21 ������������ʽ���� Exposure system, and exposure method, and device production method
EP1364257A1 (en) 2001-02-27 2003-11-26 ASML US, Inc. Simultaneous imaging of two reticles
WO2002080185A1 (en) 2001-03-28 2002-10-10 Nikon Corporation Stage device, exposure device, and method of manufacturing device
JP2002305140A (en) 2001-04-06 2002-10-18 Nikon Corp Aligner and substrate processing system
WO2002084850A1 (en) 2001-04-09 2002-10-24 Kabushiki Kaisha Yaskawa Denki Canned linear motor armature and canned linear motor
US6737662B2 (en) 2001-06-01 2004-05-18 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product
US7015491B2 (en) 2001-06-01 2006-03-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby, control system
WO2002101804A1 (en) 2001-06-11 2002-12-19 Nikon Corporation Exposure device, device manufacturing method, and temperature stabilization flow passage device
WO2002103766A1 (en) * 2001-06-13 2002-12-27 Nikon Corporation Scanning exposure method and scanning exposure system, and device production method
EP1280007B1 (en) 2001-07-24 2008-06-18 ASML Netherlands B.V. Imaging apparatus
JPWO2003023832A1 (en) 2001-09-07 2004-12-24 株式会社ニコン Exposure method and apparatus, and device manufacturing method
US6819490B2 (en) 2001-09-10 2004-11-16 Micronic Laser Systems Ab Homogenization of a spatially coherent radiation beam and printing and inspection, respectively, of a pattern on a workpiece
DE60227854D1 (en) 2001-10-01 2008-09-04 Sony Corp Polarization-selective prism for a projector
US6577379B1 (en) 2001-11-05 2003-06-10 Micron Technology, Inc. Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate
US6900915B2 (en) 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
US6618185B2 (en) * 2001-11-28 2003-09-09 Micronic Laser Systems Ab Defective pixel compensation method
US6577429B1 (en) 2002-01-15 2003-06-10 Eastman Kodak Company Laser projection display system
TW200302507A (en) 2002-01-21 2003-08-01 Nikon Corp Stage device and exposure device
JP4352458B2 (en) 2002-03-01 2009-10-28 株式会社ニコン Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, exposure apparatus manufacturing method, program, and device manufacturing method
DE10210899A1 (en) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refractive projection lens for immersion lithography
CN1650401B (en) 2002-04-09 2010-04-21 株式会社尼康 Exposure method, exposure apparatus, and method for manufacturing device
CN1659479A (en) 2002-04-10 2005-08-24 富士胶片株式会社 Exposure head, exposure apparatus, and application thereof
US6960035B2 (en) 2002-04-10 2005-11-01 Fuji Photo Film Co., Ltd. Laser apparatus, exposure head, exposure apparatus, and optical fiber connection method
US20050095749A1 (en) 2002-04-29 2005-05-05 Mathias Krellmann Device for protecting a chip and method for operating a chip
JP4324957B2 (en) 2002-05-27 2009-09-02 株式会社ニコン Illumination optical apparatus, exposure apparatus, and exposure method
DE60319462T2 (en) 2002-06-11 2009-03-12 Asml Netherlands B.V. Lithographic apparatus and method for making an article
JP3884996B2 (en) * 2002-06-14 2007-02-21 キヤノン株式会社 Holding device in projection optical system, optical adjustment method using the holding device, exposure apparatus having the holding device, exposure method, and device manufacturing method
EP1395049A1 (en) 2002-09-02 2004-03-03 Sony International (Europe) GmbH Illumination unit for a projection system
US20050141583A1 (en) 2002-09-02 2005-06-30 Torbjorn Sandstrom Method and device for coherence reduction
JP2004111579A (en) 2002-09-17 2004-04-08 Canon Inc Exposure method and system
KR100480620B1 (en) 2002-09-19 2005-03-31 삼성전자주식회사 Exposing equipment including a Micro Mirror Array and exposing method using the exposing equipment
US6958867B2 (en) 2002-09-30 2005-10-25 Fuji Photo Film Co., Ltd. Illumination optical system, exposure device using the illumination optical system, and exposure method
US6665119B1 (en) 2002-10-15 2003-12-16 Eastman Kodak Company Wire grid polarizer
CN100568101C (en) 2002-11-12 2009-12-09 Asml荷兰有限公司 Lithographic equipment and device making method
US6844927B2 (en) 2002-11-27 2005-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for removing optical abberations during an optical inspection
US6958806B2 (en) 2002-12-02 2005-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200412617A (en) 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
JP4362867B2 (en) 2002-12-10 2009-11-11 株式会社ニコン Exposure apparatus and device manufacturing method
SG171468A1 (en) 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
KR20050062665A (en) 2002-12-10 2005-06-23 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
KR20050085236A (en) 2002-12-10 2005-08-29 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
KR101036114B1 (en) 2002-12-10 2011-05-23 가부시키가이샤 니콘 Exposure apparatus, exposure method and method for manufacturing device
US20040108973A1 (en) 2002-12-10 2004-06-10 Kiser David K. Apparatus for generating a number of color light components
CN100429748C (en) 2002-12-10 2008-10-29 株式会社尼康 Exposure apparatus and method for producing device
WO2004053957A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
JP4352874B2 (en) 2002-12-10 2009-10-28 株式会社ニコン Exposure apparatus and device manufacturing method
TW200421444A (en) 2002-12-10 2004-10-16 Nippon Kogaku Kk Optical device and projecting exposure apparatus using such optical device
WO2004053951A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
DE10257766A1 (en) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Method for setting a desired optical property of a projection lens and microlithographic projection exposure system
US6891655B2 (en) 2003-01-02 2005-05-10 Micronic Laser Systems Ab High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices
EP1583946B1 (en) 2003-01-15 2006-11-08 Micronic Laser Systems Ab A method to detect a defective pixel
JP4280509B2 (en) 2003-01-31 2009-06-17 キヤノン株式会社 Projection exposure mask, projection exposure mask manufacturing method, projection exposure apparatus, and projection exposure method
TW201908879A (en) 2003-02-26 2019-03-01 日商尼康股份有限公司 Exposure apparatus, exposure method, and method for producing device
SE0300516D0 (en) * 2003-02-28 2003-02-28 Micronic Laser Systems Ab SLM direct writer
EP1610361B1 (en) 2003-03-25 2014-05-21 Nikon Corporation Exposure system and device production method
JP2004304135A (en) * 2003-04-01 2004-10-28 Nikon Corp Exposure device, exposing method and manufacturing method of micro-device
WO2004091079A1 (en) 2003-04-07 2004-10-21 Kabushiki Kaisha Yaskawa Denki Canned linear motor armature and canned linear motor
WO2004090956A1 (en) 2003-04-07 2004-10-21 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004094940A1 (en) 2003-04-23 2004-11-04 Nikon Corporation Interferometer system, signal processing method in interferometer system, stage using the signal processing method
US7095546B2 (en) 2003-04-24 2006-08-22 Metconnex Canada Inc. Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
TW200507055A (en) 2003-05-21 2005-02-16 Nikon Corp Polarized cancellation element, illumination device, exposure device, and exposure method
TWI424470B (en) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI421906B (en) 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
CN100541717C (en) 2003-05-28 2009-09-16 株式会社尼康 Exposure method, exposure device and device making method
DE10324477A1 (en) 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Microlithographic projection exposure system
WO2004109780A1 (en) 2003-06-04 2004-12-16 Nikon Corporation Stage apparatus, fixation method, exposure apparatus, exposure method, and device-producing method
KR101146962B1 (en) 2003-06-19 2012-05-22 가부시키가이샤 니콘 Exposure device and device producing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
WO2005006418A1 (en) 2003-07-09 2005-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2005008754A1 (en) 2003-07-18 2005-01-27 Nikon Corporation Flare measurement method, exposure method, and flare measurement mask
KR20180077311A (en) 2003-08-29 2018-07-06 가부시키가이샤 니콘 Liquid recovery apparatus, exposure apparatus, exposure method, and device production method
US7714983B2 (en) * 2003-09-12 2010-05-11 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
DE10343333A1 (en) 2003-09-12 2005-04-14 Carl Zeiss Smt Ag Illumination system for microlithography projection exposure system, has mirror arrangement with array of individual mirrors that is controlled individually by changing angular distribution of light incident on mirror arrangement
WO2005029559A1 (en) 2003-09-19 2005-03-31 Nikon Corporation Exposure apparatus and device producing method
TW200521477A (en) 2003-09-25 2005-07-01 Matsushita Electric Ind Co Ltd Projector and projection method
US7692784B2 (en) * 2003-09-26 2010-04-06 Tidal Photonics, Inc. Apparatus and methods relating to enhanced spectral measurement systems
JPWO2005036619A1 (en) 2003-10-09 2007-11-22 株式会社ニコン Illumination optical apparatus, exposure apparatus, and exposure method
WO2005036620A1 (en) 2003-10-10 2005-04-21 Nikon Corporation Exposure method, exposure device, and device manufacturing method
WO2005041276A1 (en) 2003-10-28 2005-05-06 Nikon Corporation Exposure apparatus, exposure method, and device producing method
TW201834020A (en) 2003-10-28 2018-09-16 日商尼康股份有限公司 Optical illumination device, exposure device, exposure method and device manufacturing method
US7148952B2 (en) 2003-10-31 2006-12-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196772B2 (en) * 2003-11-07 2007-03-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4631707B2 (en) 2003-11-13 2011-02-16 株式会社ニコン Illumination device, an exposure device, manufacturing method for an exposure method and device
JPWO2005048325A1 (en) 2003-11-17 2007-11-29 株式会社ニコン Stage driving method, stage apparatus, and exposure apparatus
TWI512335B (en) * 2003-11-20 2015-12-11 尼康股份有限公司 Light beam converter, optical illuminating apparatus, exposure device, and exposure method
KR101499405B1 (en) 2003-12-15 2015-03-05 가부시키가이샤 니콘 Stage system, exposure apparatus and exposure method
US7542217B2 (en) * 2003-12-19 2009-06-02 Carl Zeiss Smt Ag Beam reshaping unit for an illumination system of a microlithographic projection exposure apparatus
US8064044B2 (en) 2004-01-05 2011-11-22 Nikon Corporation Exposure apparatus, exposure method, and device producing method
WO2005071717A1 (en) 2004-01-26 2005-08-04 Nikon Corporation Exposure apparatus and device producing method
US7580559B2 (en) 2004-01-29 2009-08-25 Asml Holding N.V. System and method for calibrating a spatial light modulator
WO2005076321A1 (en) 2004-02-03 2005-08-18 Nikon Corporation Exposure apparatus and method of producing device
TWI412067B (en) 2004-02-06 2013-10-11 尼康股份有限公司 Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
EP1724815B1 (en) 2004-02-10 2012-06-13 Nikon Corporation Aligner, device manufacturing method, maintenance method and aligning method
US20050231731A1 (en) * 2004-02-18 2005-10-20 The Usa As Represented By The Administrator Of The National Aeronautics And Space Administration Systems and methods for fabricating thin films
WO2005081291A1 (en) 2004-02-19 2005-09-01 Nikon Corporation Exposure apparatus and method of producing device
KR101106497B1 (en) 2004-02-20 2012-01-20 가부시키가이샤 니콘 Exposure apparatus, supply method and recovery method, exposure method, and device producing method
JP4693088B2 (en) 2004-02-20 2011-06-01 株式会社ニコン Illumination optical apparatus, exposure apparatus, and exposure method
US7551261B2 (en) 2004-02-26 2009-06-23 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
US6977718B1 (en) 2004-03-02 2005-12-20 Advanced Micro Devices, Inc. Lithography method and system with adjustable reflector
JP2005309380A (en) 2004-03-26 2005-11-04 Fuji Photo Film Co Ltd Image exposure device
US7153616B2 (en) * 2004-03-31 2006-12-26 Asml Holding N.V. System and method for verifying and controlling the performance of a maskless lithography tool
JP2005302825A (en) 2004-04-07 2005-10-27 Canon Inc Exposure system
EP2490248A3 (en) 2004-04-19 2018-01-03 Nikon Corporation Exposure apparatus and device manufacturing method
US7123348B2 (en) 2004-06-08 2006-10-17 Asml Netherlands B.V Lithographic apparatus and method utilizing dose control
US7116403B2 (en) 2004-06-28 2006-10-03 Asml Netherlands B.V Lithographic apparatus and device manufacturing method
US7116404B2 (en) * 2004-06-30 2006-10-03 Asml Netherlands B.V Lithographic apparatus and device manufacturing method
US7283209B2 (en) 2004-07-09 2007-10-16 Carl Zeiss Smt Ag Illumination system for microlithography
US7259827B2 (en) 2004-07-14 2007-08-21 Asml Netherlands B.V. Diffuser unit, lithographic apparatus, method for homogenizing a beam of radiation, a device manufacturing method and device manufactured thereby
DE102004035489A1 (en) 2004-07-19 2006-02-16 Jenoptik Laser, Optik, Systeme Gmbh Optical system for converting a primary intensity distribution into a given, space-angle-dependent intensity distribution
JP2006054328A (en) * 2004-08-12 2006-02-23 Nikon Corp Illumination optic device, exposure device and manufacturing method of micro device
JP4599936B2 (en) 2004-08-17 2010-12-15 株式会社ニコン Illumination optical apparatus, adjustment method of illumination optical apparatus, exposure apparatus, and exposure method
EP1801853A4 (en) 2004-08-18 2008-06-04 Nikon Corp Exposure apparatus and device manufacturing method
US20080318152A1 (en) 2004-09-17 2008-12-25 Takeyuki Mizutani Substrate for Exposure, Exposure Method and Device Manufacturing Method
GB2419208A (en) 2004-10-18 2006-04-19 Qinetiq Ltd Optical correlation employing an optical bit delay
US7177012B2 (en) 2004-10-18 2007-02-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006051909A1 (en) 2004-11-11 2006-05-18 Nikon Corporation Exposure method, device manufacturing method, and substrate
US7333177B2 (en) 2004-11-30 2008-02-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1837895B1 (en) 2004-12-27 2016-02-24 Nikon Corporation Optical integrator, illumination optical apparatus, exposure apparatus, exposure method, and device manufacturing method
US20060138349A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200923418A (en) * 2005-01-21 2009-06-01 Nikon Corp Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device
JP2006208432A (en) 2005-01-25 2006-08-10 Fuji Photo Film Co Ltd Exposure method and apparatus
WO2006080285A1 (en) 2005-01-25 2006-08-03 Nikon Corporation Exposure device, exposure method, and micro device manufacturing method
KR100664325B1 (en) 2005-02-04 2007-01-04 삼성전자주식회사 Light tunnel and Projection apparatus having the same
JP2006216917A (en) 2005-02-07 2006-08-17 Canon Inc Illumination optical system, exposure device, and manufacturing method thereof
WO2006085524A1 (en) 2005-02-14 2006-08-17 Nikon Corporation Exposure equipment
WO2006085626A1 (en) 2005-02-14 2006-08-17 Nikon Corporation Exposure method and system, and method for fabricating device
WO2006100889A1 (en) 2005-03-23 2006-09-28 Konica Minolta Holdings, Inc. Method for forming organic el layer
JP4561425B2 (en) * 2005-03-24 2010-10-13 ソニー株式会社 Hologram recording / reproducing apparatus and hologram recording / reproducing method
US7317506B2 (en) 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
US7548302B2 (en) 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006303193A (en) * 2005-04-20 2006-11-02 Canon Inc Exposure device, calibrating method, and device manufacturing method
US7400382B2 (en) 2005-04-28 2008-07-15 Asml Holding N.V. Light patterning device using tilting mirrors in a superpixel form
US7724379B2 (en) 2005-05-12 2010-05-25 Technodream21, Inc. 3-Dimensional shape measuring method and device thereof
JP4771753B2 (en) 2005-06-08 2011-09-14 新光電気工業株式会社 Surface light source control apparatus and surface light source control method
DE102005030839A1 (en) 2005-07-01 2007-01-11 Carl Zeiss Smt Ag Projection exposure system with a plurality of projection lenses
US7701555B2 (en) 2005-07-01 2010-04-20 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and system
JPWO2007055237A1 (en) 2005-11-09 2009-04-30 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP2007150295A (en) 2005-11-10 2007-06-14 Carl Zeiss Smt Ag Optical device comprising raster element, and irradiation system comprising the optical device
JPWO2007055373A1 (en) 2005-11-14 2009-04-30 株式会社ニコン Liquid recovery member, exposure apparatus, exposure method, and device manufacturing method
KR20080071552A (en) 2005-12-06 2008-08-04 가부시키가이샤 니콘 Exposure method, exposure apparatus, and method for manufacturing device
EP1962329B1 (en) 2005-12-08 2014-08-06 Nikon Corporation Substrate holding device, exposure device, exposure method, and device fabrication method
WO2007072639A1 (en) 2005-12-21 2007-06-28 Nikon Corporation Optical integrator, illumination optical device, aligner, and method for fabricating device
US7532378B2 (en) 2006-02-21 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, method of laser irradiation, and method for manufacturing semiconductor device
US7525642B2 (en) 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101389982A (en) 2006-02-27 2009-03-18 株式会社尼康 Dichroic filter
JP2007234110A (en) * 2006-02-28 2007-09-13 Toshiba Corp Optical information recording apparatus and control method of optical information recording apparatus
EP1993120A1 (en) 2006-03-03 2008-11-19 Nikon Corporation Exposure method and apparatus, and device manufacturing method
JPWO2007132862A1 (en) 2006-05-16 2009-09-24 株式会社ニコン Projection optical system, exposure method, exposure apparatus, and device manufacturing method
JP4893112B2 (en) 2006-06-03 2012-03-07 株式会社ニコン High frequency circuit components
EP2068349A4 (en) 2006-09-29 2011-03-30 Nikon Corp Stage device and exposure device
US7804603B2 (en) 2006-10-03 2010-09-28 Asml Netherlands B.V. Measurement apparatus and method
JP4924879B2 (en) 2006-11-14 2012-04-25 株式会社ニコン Encoder
WO2008065977A1 (en) 2006-11-27 2008-06-05 Nikon Corporation Exposure method, pattern forming method, exposure device, and device manufacturing method
JP4910679B2 (en) 2006-12-21 2012-04-04 株式会社ニコン Variable capacitor, variable capacitor device, high frequency circuit filter and high frequency circuit
KR20090106555A (en) 2006-12-27 2009-10-09 가부시키가이샤 니콘 Stage apparatus, exposure apparatus and device manufacturing method
WO2008090975A1 (en) 2007-01-26 2008-07-31 Nikon Corporation Support structure and exposure apparatus
US8937706B2 (en) 2007-03-30 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and method
US9250536B2 (en) 2007-03-30 2016-02-02 Asml Netherlands B.V. Lithographic apparatus and method
US20080259304A1 (en) 2007-04-20 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and method
KR101497886B1 (en) 2007-05-09 2015-03-04 가부시키가이샤 니콘 Photomask substrate, photomask substrate forming member, photomask substrate manufacturing method, photomask, and exposure method using photomask
US7573564B2 (en) 2007-06-26 2009-08-11 The United States Of America As Represented By The Secretary Of The Army Systems for doppler tracking using photonic mixing detectors
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US20090091730A1 (en) 2007-10-03 2009-04-09 Nikon Corporation Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method
JP5267029B2 (en) 2007-10-12 2013-08-21 株式会社ニコン Illumination optical apparatus, exposure apparatus, and device manufacturing method
EP2179329A1 (en) 2007-10-16 2010-04-28 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
WO2009050976A1 (en) 2007-10-16 2009-04-23 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
JP2010004008A (en) 2007-10-31 2010-01-07 Nikon Corp Optical unit, illumination optical device, exposure apparatus, exposure method and production process of device
WO2009153925A1 (en) 2008-06-17 2009-12-23 株式会社ニコン Nano-imprint method and apparatus
WO2009157154A1 (en) 2008-06-26 2009-12-30 株式会社ニコン Method and apparatus for manufacturing display element
WO2010001537A1 (en) 2008-06-30 2010-01-07 株式会社ニコン Method and apparatus for manufacturing display element, method and apparatus for manufacturing thin film transistor, and circuit forming apparatus

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
None *
See also references of WO2009050977A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012060099A1 (en) * 2010-11-04 2012-05-10 株式会社ニコン Light source adjustment method, exposure method, device manufacturing method, illumination optical system, and exposure device

Also Published As

Publication number Publication date
CN101681125A (en) 2010-03-24
HK1139745A1 (en) 2010-09-24
KR101546987B1 (en) 2015-08-24
WO2009050977A1 (en) 2009-04-23
US8520291B2 (en) 2013-08-27
US20090097094A1 (en) 2009-04-16
TW200919115A (en) 2009-05-01
SG185313A1 (en) 2012-11-29
TWI456354B (en) 2014-10-11
CN101681125B (en) 2013-08-21
JP2010034486A (en) 2010-02-12
KR20100087325A (en) 2010-08-04
SG10201602750RA (en) 2016-05-30
JP5287114B2 (en) 2013-09-11

Similar Documents

Publication Publication Date Title
US8520291B2 (en) Illumination optical system, exposure apparatus, and device manufacturing method
US8462317B2 (en) Illumination optical system, exposure apparatus, and device manufacturing method
KR101251214B1 (en) Lighting optical device, exposure system, exposure method, device manufacturing method and lighting method
JP3826047B2 (en) Exposure apparatus, exposure method, and device manufacturing method using the same
US8953147B2 (en) Spatial light modulation unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
KR20110021705A (en) Inspection device and inspecting method for spatial light modulator, illuminating optical system, method for adjusting the illuminating optical system, exposure device, and device manufacturing method
JP2010004008A (en) Optical unit, illumination optical device, exposure apparatus, exposure method and production process of device
JP5700272B2 (en) Illumination optical system, exposure apparatus, and device manufacturing method
JP2004055856A (en) Lighting device, manufacturing method for exposure device and for device utilizing the same
TWI470366B (en) Ilumination optical system, exposure apparatus and device manufacturing method
JP2004311742A (en) Method for adjusting optical system, lighting optical device, aligner, and exposure method
JP2009267390A (en) Optical integrator, illumination optical system, exposure device, and device manufacturing method
JP5187631B2 (en) Correction unit, illumination optical system, exposure apparatus, and device manufacturing method
JP2003178954A (en) Exposure system and method of manufacturing device
JP2002270491A (en) Aligner, aligner manufacturing method, wave front aberration measuring apparatus and microdevice manufacturing method
JP2011187989A (en) Illumination optical device, method of adjusting illumination optical device, exposure device, and exposure method
JP2006203257A (en) Exposure method
JP2009117672A (en) Illumination optical system, exposure apparatus, and device manufacturing method

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20091208

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA MK RS

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: NIKON CORPORATION

REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1142690

Country of ref document: HK

DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: NIKON CORPORATION

17Q First examination report despatched

Effective date: 20180327

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20191213

RIN1 Information on inventor provided before grant (corrected)

Inventor name: TANAKA, HIROHISA

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20200603

REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1142690

Country of ref document: HK