TWI515770B - An exposure apparatus, an exposure method, and an element manufacturing method - Google Patents

An exposure apparatus, an exposure method, and an element manufacturing method Download PDF

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Publication number
TWI515770B
TWI515770B TW102123165A TW102123165A TWI515770B TW I515770 B TWI515770 B TW I515770B TW 102123165 A TW102123165 A TW 102123165A TW 102123165 A TW102123165 A TW 102123165A TW I515770 B TWI515770 B TW I515770B
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TW
Taiwan
Prior art keywords
substrate
liquid immersion
liquid
optical system
wafer
Prior art date
Application number
TW102123165A
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English (en)
Chinese (zh)
Other versions
TW201342430A (zh
Inventor
蛯原明光
Original Assignee
尼康股份有限公司
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Publication date
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Publication of TW201342430A publication Critical patent/TW201342430A/zh
Application granted granted Critical
Publication of TWI515770B publication Critical patent/TWI515770B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70816—Bearings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Glass Compositions (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
  • Magnetic Bearings And Hydrostatic Bearings (AREA)
  • Microscoopes, Condenser (AREA)
  • Magnetic Heads (AREA)
TW102123165A 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method TWI515770B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003174259 2003-06-19

Publications (2)

Publication Number Publication Date
TW201342430A TW201342430A (zh) 2013-10-16
TWI515770B true TWI515770B (zh) 2016-01-01

Family

ID=33534785

Family Applications (15)

Application Number Title Priority Date Filing Date
TW102123165A TWI515770B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW099136459A TWI457981B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW102123163A TWI540612B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW104107541A TWI543235B (zh) 2003-06-19 2004-06-18 A method of manufacturing an exposure apparatus and an element
TW098146230A TWI463532B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW102123164A TWI515769B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW099136460A TWI482200B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW103137368A TWI527086B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW105113425A TWI590306B (zh) 2003-06-19 2004-06-18 Exposure apparatus, exposure method, and device manufacturing method
TW103137370A TWI564933B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW098146233A TWI433212B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW098113289A TWI433211B (zh) 2003-06-19 2004-06-18 A method of manufacturing an exposure apparatus and an element
TW102123393A TWI536430B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW106105260A TW201721717A (zh) 2003-06-19 2004-06-18 曝光裝置、曝光方法、及元件製造方法
TW093117577A TW200514132A (en) 2003-06-19 2004-06-18 Exposure equipment, and component manufacture method

Family Applications After (14)

Application Number Title Priority Date Filing Date
TW099136459A TWI457981B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW102123163A TWI540612B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW104107541A TWI543235B (zh) 2003-06-19 2004-06-18 A method of manufacturing an exposure apparatus and an element
TW098146230A TWI463532B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW102123164A TWI515769B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW099136460A TWI482200B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW103137368A TWI527086B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW105113425A TWI590306B (zh) 2003-06-19 2004-06-18 Exposure apparatus, exposure method, and device manufacturing method
TW103137370A TWI564933B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW098146233A TWI433212B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW098113289A TWI433211B (zh) 2003-06-19 2004-06-18 A method of manufacturing an exposure apparatus and an element
TW102123393A TWI536430B (zh) 2003-06-19 2004-06-18 An exposure apparatus, an exposure method, and an element manufacturing method
TW106105260A TW201721717A (zh) 2003-06-19 2004-06-18 曝光裝置、曝光方法、及元件製造方法
TW093117577A TW200514132A (en) 2003-06-19 2004-06-18 Exposure equipment, and component manufacture method

Country Status (9)

Country Link
US (22) US7321419B2 (cg-RX-API-DMAC7.html)
EP (4) EP1635382B1 (cg-RX-API-DMAC7.html)
JP (19) JP4437474B2 (cg-RX-API-DMAC7.html)
KR (19) KR101265454B1 (cg-RX-API-DMAC7.html)
CN (2) CN101436003B (cg-RX-API-DMAC7.html)
AT (1) ATE453209T1 (cg-RX-API-DMAC7.html)
DE (1) DE602004024782D1 (cg-RX-API-DMAC7.html)
TW (15) TWI515770B (cg-RX-API-DMAC7.html)
WO (1) WO2004114380A1 (cg-RX-API-DMAC7.html)

Families Citing this family (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR20130010039A (ko) * 2002-12-10 2013-01-24 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2004090952A1 (ja) 2003-04-09 2004-10-21 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
JP4775256B2 (ja) 2003-04-10 2011-09-21 株式会社ニコン 液浸リソグラフィ装置用の減圧排出を含む環境システム
KR101497289B1 (ko) 2003-04-10 2015-02-27 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
SG139734A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101265454B1 (ko) 2003-06-19 2013-05-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101248325B1 (ko) * 2003-09-26 2013-03-27 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법
TWI474132B (zh) 2003-10-28 2015-02-21 尼康股份有限公司 照明光學裝置、投影曝光裝置、曝光方法以及元件製造方法
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI512335B (zh) 2003-11-20 2015-12-11 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
US7466489B2 (en) * 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
KR20180117228A (ko) 2004-01-05 2018-10-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
TWI379344B (en) 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
JP4525676B2 (ja) 2004-03-25 2010-08-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101259190B1 (ko) 2004-06-17 2013-04-29 가부시키가이샤 니콘 액침 리소그래피 렌즈에 대한 유체 압력 보상
JP4565272B2 (ja) 2004-07-01 2010-10-20 株式会社ニコン 液浸リソグラフィのための動的流体制御システム
DE602005021653D1 (de) 2004-08-03 2010-07-15 Nippon Kogaku Kk Belichtungsgeräte, belichtungsverfahren und bauelemente-herstellungsverfahren
KR101364347B1 (ko) 2004-10-15 2014-02-18 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TWI416265B (zh) 2004-11-01 2013-11-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2006222165A (ja) * 2005-02-08 2006-08-24 Canon Inc 露光装置
US8018573B2 (en) * 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4888388B2 (ja) * 2005-03-31 2012-02-29 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7515281B2 (en) 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161659B2 (en) 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101544336B1 (ko) 2005-05-12 2015-08-12 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
JP4708860B2 (ja) * 2005-05-23 2011-06-22 キヤノン株式会社 液浸露光装置
JP5309565B2 (ja) * 2005-08-05 2013-10-09 株式会社ニコン ステージ装置、露光装置、方法、露光方法、及びデバイス製造方法
US20070127135A1 (en) * 2005-11-01 2007-06-07 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
JPWO2007052659A1 (ja) * 2005-11-01 2009-04-30 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US20070126999A1 (en) * 2005-12-07 2007-06-07 Nikon Corporation Apparatus and method for containing immersion liquid in immersion lithography
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101385121B (zh) * 2006-02-21 2011-04-20 株式会社尼康 图案形成装置及图案形成方法、移动体驱动系统及移动体驱动方法、曝光装置及曝光方法、以及组件制造方法
SG170010A1 (en) * 2006-02-21 2011-04-29 Nikon Corp Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure appararus and method, and device manufacturing method
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US7483120B2 (en) 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
US7804582B2 (en) * 2006-07-28 2010-09-28 Asml Netherlands B.V. Lithographic apparatus, method of calibrating a lithographic apparatus and device manufacturing method
KR101634893B1 (ko) * 2006-08-31 2016-06-29 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI416269B (zh) * 2006-08-31 2013-11-21 尼康股份有限公司 Mobile body driving method and moving body driving system, pattern forming method and apparatus, exposure method and apparatus, and component manufacturing method
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
WO2008038752A1 (en) * 2006-09-29 2008-04-03 Nikon Corporation Mobile unit system, pattern forming device, exposing device, exposing method, and device manufacturing method
US20080158531A1 (en) 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8267388B2 (en) * 2007-09-12 2012-09-18 Xradia, Inc. Alignment assembly
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP4533416B2 (ja) * 2007-09-25 2010-09-01 キヤノン株式会社 露光装置およびデバイス製造方法
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
SG10201602750RA (en) 2007-10-16 2016-05-30 Nikon Corp Illumination Optical System, Exposure Apparatus, And Device Manufacturing Method
CN101681123B (zh) 2007-10-16 2013-06-12 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
US8279399B2 (en) 2007-10-22 2012-10-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
CN101675500B (zh) * 2007-11-07 2011-05-18 株式会社尼康 曝光装置、曝光方法以及元件制造方法
TWI643035B (zh) 2007-12-28 2018-12-01 日商尼康股份有限公司 Exposure apparatus, exposure method, and component manufacturing method
FR2927708A1 (fr) * 2008-02-19 2009-08-21 Commissariat Energie Atomique Procede de photolithographie ultraviolette a immersion
NL1036614A1 (nl) * 2008-03-21 2009-09-22 Asml Netherlands Bv A target material, a source, an EUV lithographic apparatus and a device manufacturing method using the same.
CN105606344B (zh) 2008-05-28 2019-07-30 株式会社尼康 照明光学系统、照明方法、曝光装置以及曝光方法
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
KR101634825B1 (ko) * 2008-06-09 2016-06-29 케이엘에이-텐코어 코오포레이션 참조 검사 디바이스
US8260479B2 (en) * 2008-12-09 2012-09-04 Honeywell International Inc. Modular software architecture for an unmanned aerial vehicle
US8902402B2 (en) 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8599359B2 (en) 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8760629B2 (en) 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP2221668B1 (en) * 2009-02-24 2021-04-14 ASML Netherlands B.V. Lithographic apparatus and positioning assembly
US8792084B2 (en) * 2009-05-20 2014-07-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8970820B2 (en) 2009-05-20 2015-03-03 Nikon Corporation Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method
US8553204B2 (en) * 2009-05-20 2013-10-08 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
JP5365407B2 (ja) * 2009-08-17 2013-12-11 ソニー株式会社 画像取得装置及び画像取得方法
US20110096306A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110096318A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110102761A1 (en) * 2009-09-28 2011-05-05 Nikon Corporation Stage apparatus, exposure apparatus, and device fabricating method
US20110096312A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110123913A1 (en) * 2009-11-19 2011-05-26 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
US20110128523A1 (en) * 2009-11-19 2011-06-02 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
DE102010024263A1 (de) * 2010-06-18 2011-12-22 Festo Ag & Co. Kg Luftlagereinrichtung
EP2593841A2 (en) * 2010-07-15 2013-05-22 Centre de Recherche Public - Gabriel Lippmann Methods and systems for detecting, setting, monitoring, determining, storing and compensating the spatial situation of a mobile unit
NL2008183A (en) * 2011-02-25 2012-08-28 Asml Netherlands Bv A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method.
JPWO2012127629A1 (ja) 2011-03-22 2014-07-24 富士通株式会社 サーバシステム及びクロスバボードの活性保守方法
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
NL2008695A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Lithographic apparatus comprising substrate table.
NL2007114C2 (en) * 2011-07-14 2013-01-15 Levitech B V Floating substrate monitoring and control device, and method for the same.
NL2009692A (en) * 2011-12-07 2013-06-10 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
US9211481B2 (en) * 2012-07-27 2015-12-15 Nb Tech Inc. Visual display system and method of constructing a high-gain reflective beam-splitter
JP5975785B2 (ja) * 2012-08-14 2016-08-23 株式会社アドテックエンジニアリング 描画装置、露光描画装置、プログラム及び描画方法
US9362812B2 (en) * 2012-09-18 2016-06-07 Honeywell International Inc. Shaft coupling apparatus, rotary fluid damper, and deployable device with magnetic coupling mechanism
US9772564B2 (en) 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
TWI564555B (zh) * 2014-12-27 2017-01-01 財團法人工業技術研究院 全周反射取像模組與全周反射取像方法
CN104597721B (zh) * 2015-01-20 2016-09-21 中国科学院上海光学精密机械研究所 紫外光刻二维平台
JP6855008B2 (ja) * 2015-03-31 2021-04-07 株式会社ニコン 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法
TWI741654B (zh) * 2015-03-31 2021-10-01 日商尼康股份有限公司 曝光裝置、平面顯示器之製造方法、元件製造方法、及曝光方法
CN108024612B (zh) 2015-07-06 2021-06-08 米切尔特勒斯企业有限公司 用于施加产品的装置
JP6855009B2 (ja) * 2015-09-30 2021-04-07 株式会社ニコン 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
US10527957B2 (en) * 2015-11-30 2020-01-07 Asml Netherlands B.V. Method and apparatus for processing a substrate in a lithographic apparatus
NL2019453A (en) 2016-09-12 2018-03-15 Asml Netherlands Bv Fluid handling structure for lithographic apparatus
US10372113B2 (en) * 2016-09-23 2019-08-06 Kla-Tencor Corporation Method for defocus detection
US9990460B2 (en) * 2016-09-30 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source beam optimization method for improving lithography printability
CN109256884A (zh) * 2017-10-13 2019-01-22 朱卫 一种用钛金属生产的马达外壳
WO2019169005A1 (en) 2018-02-27 2019-09-06 Georgia Tech Research Corporation System, devices, and methods providing hydrodynamic barriers
JP6922849B2 (ja) * 2018-05-25 2021-08-18 信越化学工業株式会社 単量体、ポリマー、ネガ型レジスト組成物、フォトマスクブランク、及びレジストパターン形成方法
CN110658683A (zh) * 2018-06-28 2020-01-07 上海微电子装备（集团）股份有限公司 晶片承载系统和浸没光刻设备
JP7099250B2 (ja) 2018-10-25 2022-07-12 信越化学工業株式会社 オニウム塩、ネガ型レジスト組成物及びレジストパターン形成方法
JP2019183175A (ja) * 2019-08-01 2019-10-24 ダイキン工業株式会社 離型フィルム
CN110824591A (zh) * 2019-11-20 2020-02-21 曾雪骢 一种液体镜片
CN115818207B (zh) * 2023-02-10 2023-06-02 季华实验室 一种基板传送装置、控制方法及相关设备

Family Cites Families (334)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US4026653A (en) * 1975-05-09 1977-05-31 Bell Telephone Laboratories, Incorporated Proximity printing method
US4341164A (en) 1980-06-13 1982-07-27 Charles H. Ruble Folding camp table
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) * 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
US4650983A (en) 1983-11-07 1987-03-17 Nippon Kogaku K. K. Focusing apparatus for projection optical system
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2940553B2 (ja) 1988-12-21 1999-08-25 株式会社ニコン 露光方法
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JP3200874B2 (ja) 1991-07-10 2001-08-20 株式会社ニコン 投影露光装置
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JP3203719B2 (ja) 1991-12-26 2001-08-27 株式会社ニコン 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法
JPH05304072A (ja) 1992-04-08 1993-11-16 Nec Corp 半導体装置の製造方法
US5469963A (en) 1992-04-08 1995-11-28 Asyst Technologies, Inc. Sealable transportable container having improved liner
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3316833B2 (ja) 1993-03-26 2002-08-19 株式会社ニコン 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JPH06208058A (ja) 1993-01-13 1994-07-26 Olympus Optical Co Ltd 顕微鏡対物レンズ
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JP3635684B2 (ja) 1994-08-23 2005-04-06 株式会社ニコン 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置
US5636066A (en) 1993-03-12 1997-06-03 Nikon Corporation Optical apparatus
JP3747958B2 (ja) 1995-04-07 2006-02-22 株式会社ニコン 反射屈折光学系
JP3747951B2 (ja) 1994-11-07 2006-02-22 株式会社ニコン 反射屈折光学系
JPH09311278A (ja) 1996-05-20 1997-12-02 Nikon Corp 反射屈折光学系
US5534970A (en) 1993-06-11 1996-07-09 Nikon Corporation Scanning exposure apparatus
JP3265503B2 (ja) 1993-06-11 2002-03-11 株式会社ニコン 露光方法及び装置
JP3212199B2 (ja) 1993-10-04 2001-09-25 旭硝子株式会社 平板型陰極線管
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US6989647B1 (en) 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
JP3395801B2 (ja) 1994-04-28 2003-04-14 株式会社ニコン 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
JPH07335748A (ja) 1994-06-07 1995-12-22 Miyazaki Oki Electric Co Ltd 半導体素子の製造方法
US5715064A (en) * 1994-06-17 1998-02-03 International Business Machines Corporation Step and repeat apparatus having enhanced accuracy and increased throughput
USRE38438E1 (en) 1994-08-23 2004-02-24 Nikon Corporation Catadioptric reduction projection optical system and exposure apparatus having the same
JPH0883753A (ja) 1994-09-13 1996-03-26 Nikon Corp 焦点検出方法
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08136475A (ja) 1994-11-14 1996-05-31 Kawasaki Steel Corp 板状材の表面観察装置
JP3387075B2 (ja) * 1994-12-12 2003-03-17 株式会社ニコン 走査露光方法、露光装置、及び走査型露光装置
JPH08171054A (ja) 1994-12-16 1996-07-02 Nikon Corp 反射屈折光学系
US5677758A (en) 1995-02-09 1997-10-14 Mrs Technology, Inc. Lithography System using dual substrate stages
US6008500A (en) 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3526042B2 (ja) 1995-08-09 2004-05-10 株式会社ニコン 投影露光装置
JP3242564B2 (ja) * 1995-11-29 2001-12-25 富士通株式会社 昇圧回路を有する記憶装置及び昇圧回路制御方法
JPH09232213A (ja) 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
JPH09267236A (ja) * 1996-03-29 1997-10-14 Kyocera Corp 位置決め装置
US5964441A (en) 1996-04-01 1999-10-12 Lear Corporation Linkage assembly with extruded hole member
JPH103039A (ja) 1996-06-14 1998-01-06 Nikon Corp 反射屈折光学系
JPH1020195A (ja) 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系
JP3480192B2 (ja) * 1996-10-01 2003-12-15 ウシオ電機株式会社 Ｘｙステージの位置決め装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH10188333A (ja) * 1996-11-08 1998-07-21 Hitachi Maxell Ltd 原盤露光装置
JP4029181B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置
CN1244021C (zh) 1996-11-28 2006-03-01 株式会社尼康 光刻装置和曝光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
US5815246A (en) 1996-12-24 1998-09-29 U.S. Philips Corporation Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
DE69735016T2 (de) 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographisches Gerät mit zwei Objekthaltern
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
USRE39027E1 (en) * 1997-02-07 2006-03-21 Emerson Power Transmission Manufacturing, L.P. Shaft locking device for bearing assemblies
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
USRE40043E1 (en) 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
US5884841A (en) * 1997-04-25 1999-03-23 Ratnik Industries, Inc. Method and apparatus for making snow
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
WO1999016113A1 (en) 1997-09-19 1999-04-01 Nikon Corporation Stage device, a scanning aligner and a scanning exposure method, and a device manufactured thereby
JP2000106340A (ja) * 1997-09-26 2000-04-11 Nikon Corp 露光装置及び走査露光方法、並びにステージ装置
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
WO1999027568A1 (en) 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
EP1041357A4 (en) 1997-12-18 2005-06-15 Nikon Corp PLATINUM AND EXPOSURE APPARATUS
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
JP4264676B2 (ja) 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
JPH11219896A (ja) * 1998-02-02 1999-08-10 Canon Inc 露光装置およびデバイス製造方法
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JPH11340846A (ja) 1998-05-26 1999-12-10 Alps Electric Co Ltd Ｄｅｃｔ通信装置
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
KR20010075157A (ko) 1998-09-17 2001-08-09 오노 시게오 투영광학계의 조정방법
EP1135795B1 (en) * 1998-12-02 2008-03-12 Newport Corporation Specimen holding robotic arm end effector
US6842221B1 (en) 1999-03-12 2005-01-11 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
JP4365934B2 (ja) 1999-05-10 2009-11-18 キヤノン株式会社 露光装置、半導体製造装置およびデバイス製造方法
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
JP2001118773A (ja) 1999-10-18 2001-04-27 Nikon Corp ステージ装置及び露光装置
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
JP2001160530A (ja) * 1999-12-01 2001-06-12 Nikon Corp ステージ装置及び露光装置
TW546551B (en) 1999-12-21 2003-08-11 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
TWI223734B (en) 1999-12-21 2004-11-11 Asml Netherlands Bv Crash prevention in positioning apparatus for use in lithographic projection apparatus
EP1111471B1 (en) * 1999-12-21 2005-11-23 ASML Netherlands B.V. Lithographic projection apparatus with collision preventing device
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) * 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
JP2001267239A (ja) 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2001313250A (ja) 2000-02-25 2001-11-09 Nikon Corp 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
JP2001241439A (ja) 2000-02-25 2001-09-07 Canon Inc 静圧軸受を備えた移動装置
TW546699B (en) 2000-02-25 2003-08-11 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
US6426790B1 (en) * 2000-02-28 2002-07-30 Nikon Corporation Stage apparatus and holder, and scanning exposure apparatus and exposure apparatus
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
WO2001084241A1 (en) 2000-05-03 2001-11-08 Silicon Valley Group, Inc. Non-contact seal using purge gas
SE517970C2 (sv) 2000-07-20 2002-08-13 Volvo Articulated Haulers Ab Förfarande för att uppskatta en livslängdsreducerande skada på ett i drift belastat objekt,jämte datorprogramprodukt
TW591653B (en) 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
JP2002134930A (ja) 2000-10-20 2002-05-10 Idec Izumi Corp 電気機器
JP4405071B2 (ja) * 2000-10-23 2010-01-27 パナソニック株式会社 送り装置及びそれを具備する光ディスク原盤記録装置
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002198299A (ja) 2000-12-27 2002-07-12 Nikon Corp 露光装置及びデバイス製造方法
JP2002305140A (ja) 2001-04-06 2002-10-18 Nikon Corp 露光装置及び基板処理システム
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
US6788385B2 (en) 2001-06-21 2004-09-07 Nikon Corporation Stage device, exposure apparatus and method
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US6680774B1 (en) * 2001-10-09 2004-01-20 Ultratech Stepper, Inc. Method and apparatus for mechanically masking a workpiece
US6665054B2 (en) * 2001-10-22 2003-12-16 Nikon Corporation Two stage method
US7134668B2 (en) 2001-10-24 2006-11-14 Ebara Corporation Differential pumping seal apparatus
JP2003249443A (ja) 2001-12-21 2003-09-05 Nikon Corp ステージ装置、ステージ位置管理方法、露光方法及び露光装置、並びにデバイス製造方法
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
DE10229249A1 (de) 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Refraktives Projektionsobjektiv mit einer Taille
US7154676B2 (en) 2002-03-01 2006-12-26 Carl Zeiss Smt A.G. Very-high aperture projection objective
DE10210899A1 (de) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
KR101013347B1 (ko) * 2002-04-09 2011-02-10 가부시키가이샤 니콘 노광방법, 노광장치, 및 디바이스 제조방법
EP1353229A1 (en) * 2002-04-09 2003-10-15 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
KR20040104691A (ko) 2002-05-03 2004-12-10 칼 짜이스 에스엠테 아게 높은 개구를 갖는 투영 대물렌즈
US20040035775A1 (en) * 2002-05-31 2004-02-26 Biolink Partners, Inc. MemCoatTM: functionalized surface coatings, products and uses thereof
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
EP1420300B1 (en) * 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420299B1 (en) 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101470360B (zh) 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
US6992750B2 (en) * 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
KR20130010039A (ko) 2002-12-10 2013-01-24 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7358507B2 (en) 2002-12-13 2008-04-15 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US20040227932A1 (en) 2003-02-13 2004-11-18 Geunyoung Yoon Large dynamic range shack-hartmann wavefront sensor
US7090964B2 (en) * 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) * 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6851787B2 (en) * 2003-03-06 2005-02-08 Hewlett-Packard Development Company, L.P. Printer servicing system and method
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
JP4902201B2 (ja) 2003-04-07 2012-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR101177331B1 (ko) 2003-04-09 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
WO2004093160A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
JP4775256B2 (ja) 2003-04-10 2011-09-21 株式会社ニコン 液浸リソグラフィ装置用の減圧排出を含む環境システム
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
KR101497289B1 (ko) 2003-04-10 2015-02-27 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
SG139734A1 (en) * 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
CN1774667A (zh) 2003-04-17 2006-05-17 株式会社尼康 用在浸没式平版印刷方法中自动聚焦部件的光学配置
JP4146755B2 (ja) * 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) * 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI616932B (zh) * 2003-05-23 2018-03-01 Nikon Corp Exposure device and component manufacturing method
CN1307456C (zh) * 2003-05-23 2007-03-28 佳能株式会社 投影光学系统、曝光装置及器件的制造方法
JP2004349645A (ja) 2003-05-26 2004-12-09 Sony Corp 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261741A3 (en) * 2003-06-11 2011-05-25 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) * 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) * 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
KR101265454B1 (ko) 2003-06-19 2013-05-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (ja) * 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP2005019616A (ja) 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494074A1 (en) 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1639391A4 (en) 2003-07-01 2009-04-29 Nikon Corp USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS
JP2005022696A (ja) * 2003-07-02 2005-01-27 Kashiwara Seitai:Kk 空気通路の構造及びこれを用いた空気封入緩衝材
EP2853943B1 (en) 2003-07-08 2016-11-16 Nikon Corporation Wafer table for immersion lithography
SG109000A1 (en) 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
EP1500982A1 (en) 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
WO2005010962A1 (ja) 2003-07-28 2005-02-03 Nikon Corporation 露光装置及びデバイス製造方法、並びに露光装置の制御方法
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
JP4492239B2 (ja) 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005057294A (ja) 2003-08-07 2005-03-03 Asml Netherlands Bv インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101523180B1 (ko) 2003-09-03 2015-05-26 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60302897T2 (de) 2003-09-29 2006-08-03 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1519230A1 (en) 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524557A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
TWI295408B (en) 2003-10-22 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method, and measurement system
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005159322A (ja) 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
WO2005050324A2 (en) 2003-11-05 2005-06-02 Dsm Ip Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
EP1531362A3 (en) 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
JP2005150290A (ja) 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1695148B1 (en) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersion objective
DE10355301B3 (de) 2003-11-27 2005-06-23 Infineon Technologies Ag Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie
US7125652B2 (en) * 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) 2003-12-09 2005-06-30 Canon Inc 露光装置
JP2007516613A (ja) 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー 少なくとも１つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ
WO2005106589A1 (en) 2004-05-04 2005-11-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and immersion liquid therefore
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
JP4308638B2 (ja) 2003-12-17 2009-08-05 パナソニック株式会社 パターン形成方法
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
JP4586367B2 (ja) 2004-01-14 2010-11-24 株式会社ニコン ステージ装置及び露光装置
JP5420821B2 (ja) 2004-01-14 2014-02-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 反射屈折投影対物レンズ
KR101099847B1 (ko) 2004-01-16 2011-12-27 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP2007520893A (ja) 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
US7990516B2 (en) 2004-02-03 2011-08-02 Nikon Corporation Immersion exposure apparatus and device manufacturing method with liquid detection apparatus
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
US20070165198A1 (en) 2004-02-13 2007-07-19 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
JP2005236087A (ja) 2004-02-20 2005-09-02 Nikon Corp 露光装置
JP2005259789A (ja) 2004-03-09 2005-09-22 Nikon Corp 検知システム及び露光装置、デバイス製造方法
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
JP2005268700A (ja) 2004-03-22 2005-09-29 Nikon Corp ステージ装置及び露光装置
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) * 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7227619B2 (en) * 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7295283B2 (en) * 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) * 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US20050241694A1 (en) 2004-04-29 2005-11-03 Red Flame Hot Tap Services Ltd. Hot tapping method, system and apparatus
US7244665B2 (en) * 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) * 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) * 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
KR101213831B1 (ko) 2004-05-17 2012-12-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005119368A2 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
EP1759248A1 (en) 2004-06-04 2007-03-07 Carl Zeiss SMT AG Projection system with compensation of intensity variatons and compensation element therefor
JP4305915B2 (ja) 2004-06-17 2009-07-29 シャープ株式会社 基地局選択に用いる基準を求める方法
US7057702B2 (en) 2004-06-23 2006-06-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4305917B2 (ja) 2004-07-14 2009-07-29 シャープ株式会社 映像信号処理装置及びテレビジョン装置
US7256871B2 (en) 2004-07-27 2007-08-14 Asml Netherlands B.V. Lithographic apparatus and method for calibrating the same
KR101364347B1 (ko) 2004-10-15 2014-02-18 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7161659B2 (en) 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
WO2007136089A1 (ja) 2006-05-23 2007-11-29 Nikon Corporation メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
US8436864B2 (en) * 2006-08-01 2013-05-07 Nvidia Corporation Method and user interface for enhanced graphical operation organization
US8446445B2 (en) * 2006-09-27 2013-05-21 Casio Computer Co., Ltd. Exposure device, image forming apparatus and method for operating exposure device
TWM314880U (en) * 2006-10-20 2007-07-01 Imagetech Co Ltd Multimedia video generation device
JP2007274881A (ja) 2006-12-01 2007-10-18 Nikon Corp 移動体装置、微動体及び露光装置

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