TWI308674B - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method Download PDF

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TWI308674B
TWI308674B TW094127050A TW94127050A TWI308674B TW I308674 B TWI308674 B TW I308674B TW 094127050 A TW094127050 A TW 094127050A TW 94127050 A TW94127050 A TW 94127050A TW I308674 B TWI308674 B TW I308674B
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Taiwan
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liquid
substrate
gas
recess
space
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TW200615703A (en
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Nicolaas Rudolf Kemper
Henrikus Herman Marie Cox
Sjoerd Nicolaas Lambertus Donders
Graaf Roelof Frederik De
Christiaan Alexander Hoogendam
Kate Nicolaas Ten
Jeroen Johannes Sophia Maria Mertens
Der Meulen Frits Van
Franciscus Johannes Herman Maria Teunissen
Der Toorn Jan-Gerard Cornelis Van
Martinus Cornelis Maria Verhagen
Stefan Philip Christiaan Belfroid
Johannes Petrus Maria Smeulers
Herman Vogel
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Asml Netherlands Bv
Asml Holding Nv
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
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  • Public Health (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)

Description

1308674 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種微影裝置及一種製造器件之方法。 【先前技術】
微影裝置係一機械,其可向一基板,一般係該基板的— 目標部分上施加一所需的圖案。微影裝置可用於,例如, 積體迴路(ic)的製造。在此情況下,可使用一圖案化器件 (或稱為一光罩或一標線片)來產生欲形成於該積體迴路之 一個別層上的一迴路圖案。可將此圖案轉移至一基板(如 一矽晶圓)的一目標部分(如包括部分、整個或數個晶粒) 上。圖案通常係經由成像轉移至該基板上提供的一輻射敏 感材料(光阻)層上。一般而言,一單一基板將包含連續接 文圖案化之鄰近目標部分的一網路。已知的微影裝置包 括:所謂的步進機’其中藉由一次性將整個圖案曝露於目 標部分上而照射每一目標部分;以及所謂的掃描器,其中 藉由^ %疋方向(#描」方向)透過輻射光束掃描圖 案,同時與此方向平行或反平行地掃描基板,從而照射每 一目標部分。藉由將圖牵 茶亥i印於基板上,也可以蔣圖案從 圖案化器件轉移至基板β 〃 已經有人提出將該微影扭& # @ i I杈影裝置中的基板浸泡在一折 率相對較高的液體(例如水 之最終元件與該基板之、;1於該技衫系 中將具有較短的波長,2空間。由於曝域射於該液 成像。(該液體之影響亦可點之意“於實現較小特徵 °視為提高該系統的有效數值, 103707.doc 1308674 徑(ΝΑ),且還增加聚舞深声 未度)已經有人提出其他的浸泡液 體’包括具有固態粒子(例如石英)懸浮於其中的水。 .然而’將該基板或基板與基板台沈人—液體浴中(例 •如’參見美國專利案us 4,509,852,其全部内容係以引用 .@方式併入於此)意謂著在掃描曝光期間必須加速大量的 液體。如此便需要額外的或功率更強的馬達,而且該液體 中的擾動可能會造成不理想且無法預期的效應。 針對液體供應系統所提出的其中-種解決i式便係僅於 該基板之-局部區域上及該投影系統之最終元件與該基板 (該基板的表面積通常大於該投影系統之最終元件)之間提 . 供液體。PCT專利申請公告案WO 99/49504中揭示一種為 ' &進行配置之方式,該案之全部内容係以引用的方式併入 於此。如圖2及3所示,液體係藉由至少一個入口w而供應 至忒基板上(較佳的係沿該基板相對於該最終元件移動之 方向)’且在穿過該投影系統之下後再藉由至少一個出口 鲁 OUT而移除。亦即’當於乂方向在該元件的下方掃描該基 板時,液體便會供應於該元件的+x側處,並且於-X側處 逝圖2示思性顯示該配置,其中液體係經由入口 in供 應,並藉由出口 0UT(其係連接至一低壓源)從該元件的另 一側流逝。在圖2之說明中,係沿著該基板相對於該最終 凡件移動之方向來供應該液體,不過實際情況並非一定如 此。疋位於該最終元件周圍的入口及出口可有各種方向及 數目,圖3說明一範例,其中由一入口組成且在任一側上 皆有一出口之四組係以一矩形圖案提供於該最終元件周 103707.doc 1308674 【發明内容】 X所說明的次泡微影配置中,移除一浸泡液體一般 ,1及雙相流’即該浸泡液體與-周圍氣體(例如,空氣)或 ' ^自用於限制該浸泡液體的氣體密封件之氣體混合。此 f雙相流不太敎,尤其在使用較大_力差來產生強氣 -以限制該浸泡液體或確保收集所有液體之情況下,而且 t產生不需要的振動。高壓力氣流還可引起保留於該基板 上的液體之蒸發乾燥,並產生熱量梯度。浅漏越進干涉計 光束路徑的氣流亦可影響基板台位置量測之精確度,因為 豸干涉計對該等干涉計光束的路徑中氣體之折射率變化很 敏感,例如可能由於溫度、壓力及濕度之變化 化。 因此彳利的係,例如,提供一配置以有效地從該基板 附近移除液體而不會產生明顯的振動或其他干擾。 • &據本發明之-方面,提供一種微影投影裝置,其係配 置成利用-投影系統將來自一圖案化器件之一圖案投射到 一基板上,且具有一配置成向該投影系統與該基板之間的 -空間供應-液體之液體供應系統,其所包含之一液體移 除系統包括:
Vs,其具有與一其中可能存纟〉夜體的容積空間相鄰 之一開口端; 一多孔部件,其係介於該導管端與該容積空間之間·,以及 一抽吸器件,其係配置成產生橫跨該多孔部件之一壓力 103707.doc 1308674 差。 依據本發明之一方面,提供一種器件製造方法,其包 含: 利用一投影系統將透過—液體之—圖案化的輕射光束投 射到—基板上;以及 ,由;跨對該容積空間構成至少部分限制之—多孔部件 而提供—壓力差,以自容積體積中移除該液體。 【實施方式】 圖1示意性說明依據本發明之一項具體實施例之一微影 裝置。該裝置包含: -一照明系統(照明器)IL,其係配置用以調節一輻射光束 PB(如UV輻射或DUV輻射); -一支撐結構(如光罩台)MT,其係構造用以支撐一圖案化 器件(如光罩)MA,並連接至第一定位器pM,該第一定位 器PM係配置用以依據特定參數來精確地定位該圖案化器 件; -一基板台(如晶圓台)WT,其係構造用以固持一基板(如 已塗佈光阻劑的晶圓)W,並連接至一第二定位器pw,該 第二定位器PW係配置用以依據特定參數來精確地定位該 基板;以及 -一投影系統(如一折射投影透鏡系統)PL,其係配置用以 藉由圖案化元件MA將賦予於輻射光束pb的一圖案投射至 基板W的一目標部分C(如包含一或多個晶粒)上。 該照明系統可包括各種類型的光學組件,如折射、反 103707.doc -10· 1308674 :二磁性、電磁、靜電或其他類型的光學,且件,或 組合,用於導引、成形或控制輻射。 該支撐結構會支撐,即承載該圖案化元件的重量。* 持該圖案化器件之方式取決於該圖案化元 I其固 影裝置的設計以及其他條件,例如該圖案化元件:否^ 持於真空環境中。該支擇結構可使用機械、真空電 其他爽緊技術來固持圖案化器件。該支撑結構可為一框架 或台,例如,其可視需要為固定式或可移動式。該支撐結 構可確保圖案化元件處於—所需位置,例如二 系統。本文對術語「標線片戈「 又影 Έ ^ ^ 九罩」的任何用法都可 視為與更通用的術語「圖案化器件」同義。 本文中所使用的術語「圖案化元件」應廣 示:賦予一11射光束一圖案化斷面的任何器件,以便可於 光束的圖案可能不會精確對應=應“,賦予該輻射 謂料應於純之目標部分巾的所需 圖' 例如’在該圖案包括相位偏移特徵或所謂的輔助特 :之月况下。一般而言,軾予該輻射光束中的圖案將會對 如積體迴路。 ^之1件中的—特殊功能層, 該圖案化元件可為透射型或反射型。圖案化元件之範例 已括:罩,可^式化鏡面陣列以及可程式化£(:1)面板。光 罩在心射為人所熟知,並且包含(例如)二元式、交替 式相移及衰減式相移笤本 移荨先罩類型,以及各種混合光罩類 型可輊式化鏡面陣列的—範例採用小鏡面的一矩陣配 103707.doc 1308674 置’每-鏡面可單獨地加以傾斜,以便在不同方向中反射 -入射輻射光束。It等傾斜的鏡面賦予一輻射光束一圖 案’該轄射光束受到該鏡面矩陣之反射。 本文使用的術語「投影系統」應廣義地解釋為包含任何 類型的投影系、统’如折射、反射、反折射、磁性、電磁及 電光學系統’或其任何組合’其適合於所使用的曝光轄 射或其他諸如使用浸泡液體或使用真空等因素。本文對
術語「投影透鏡」的任何用法都可視為與更通用的術語 投影系統J同義。 如此處所說明,該裝置係透射型(例如採用一透射光 W。或者,該裝置可為反射型(例如採用一上述類型的可 釭式鏡面陣列’或採用一反射光罩)。 該微影裝置可以為具有兩個(雙級)或更多基板 =或更多光罩台)之一類型。在_「多級」機器中, 可平行使用額外的工作臺, ^ , 卞量或在一或更多工作臺上實施預 傷步驟而同時將一或多個宜 飞夕個其他工作臺用於曝光。
>考圖1照明盗江接收來自輕射源S 轄射源及該微影裝置可能係分 射先束1 源為-同核複合分子雷射實體,例如,當該輻射 射Ή W 雷射夺。在此類情況下,不認為該輕 射源會形成微影装詈$ #八 人 5I σ刀,且會借助包含(例如)合適導 ^ 、束擴張11之—光束輪送系統BD,將輕射光 束從輻射源SO傳遞到昭明 可為微… 在其他的情形下,輻射源 J馬Μ衫表置之一整人八 時。_ έ- 、s e 13邛77,例如,當輻射源為水銀燈 守該幸田射源SO與昭明ττ 月,連同需要時的光束輸送系統 103707.doc 1308674 BD,可稱為一輻射系統。 照明器IL可包括一用於調整輻射光束之角強度分佈的調 整器AD。一般而言,可調整該照明器之一瞳孔平面中強 度分佈之至少外徑範圍及/或内徑範圍(通常分別稱為卜外 與σ -内p此外,該照明器IL可包含各種其他組件,例如 一整合器IN及一聚光器CO。可使用該照明器來調節該輻 射光束,以使其斷面具有所需的均勻度及強度分佈。 輻射光束PB係入射於圖案化元件(如光罩μα)上,該圖 案化元件係固持於支樓結構(如光罩台ΜΤ)上並藉由該圖案 化元件來圖案化。該投影光束ΡΒ橫穿該光罩μα後,穿過 該投影系統PL,該投影系統PL將該光束聚焦到該基板冒之 一目標部分C上。一浸泡帽ΙΗ(下面將作進一步說明)向該 投影系統PL之最終元件與該基板貿之間的一空間供應浸泡 液體。 藉助於第二定位器PW及定位感測器IF(如一干涉量測器 件、線性編碼器或電容性感測器),可精確移動基板台 WT,以便(例如)將不同的目標部分c定位於輻射光束= 路t中同樣’第一疋位器ΡΜ及另一定位感測器(其未在 圖1中明4說明)可用以相對於輻射光束⑼之路徑精確定位 光罩ΜΑ’例如,將其從—光罩庫中機器取出之後,或在 掃描期間。一般而言’光罩台Μτ的移動可借助長衝程 模組(粗略定位)及短衝程模組(精確定位)來實現,該 組形成第-定位器ΡΜ的部分。同樣,基板台1了的移動可 猎由長衝程模組及短衝程模組來實現,該等模組形成第二 103707.doc 1308674 定位器PW的部分。在步進機的情形中(與掃描器相反),光 罩台MT可能僅連接至一短衝程致動器,或為固定的。可 使用光罩對準標記M1、⑽及基板對準標記Η、Μ來對準 光罩财與基板W。雖然所述該等基板對準標記會佔據專 = 但其可位於目標部分之間隔内(其係稱為 ^線道對準標記)°同樣,在MMA上提供不止—晶粒的 十月形中’該等光罩對準標記可位於該等晶粒之間。 所述裝置可用於以下至少一模式中: 在〔進模式中’光罩台Μτ及基板台资係實質上保持 A疋’同時賦予輕射光束的整個圖案係―次性(即單 =投影至一目標部分C上。接著讓該基板台WT在x及 射]-Γ上偏移’以便可以曝光不同的目標部分c。在步 像Γ目p該曝光場之最大尺寸會限制單—靜態曝光中成 像的目標部分C之尺寸。 人 2在掃描模式中,同步掃描光罩台MT及基板台WT,同 =賦予投影光束的圖案投射至一目標部分〇上(即單一動 ^先)。錄板台WT相對於光罩台财的速度及方 ==PL之放大(縮小)倍數及影像颠倒特徵決定。在 “二 曝光場之最大尺寸會限制單-動態曝光中 “分之寬度(在非掃描方向上),而掃描動作之長度 可決疋該目標部分之高度(在掃描方向上)。 可=;!二:’該光罩台Μτ”上保持固定而固持-將赋J 亚且移動或掃插該基板台WT而同時 將賦予讀影光束之一圖案投射到一目標部分C上。在此 103707.doc -14· 1308674 ,一般採用一脈衝輻射源,並在每次移動該基板台 後或在掃描期間連續的輻射脈衝之間按需要更新該 可程式圖案化器件。此操作模式可容易地應用於採用可程 . 式化圖案化裝置(例如-上述類型的可程式化鏡®陣列)的 無光罩微影技術中。 還可使用上面說明的使用模式之組合及/或變更或完全 不同的使用模式。 ^ 圖4顯示採用一局部液體供應系統之另一浸泡微影解決 方式藉由δ亥投影系統PL之任一側上的二溝槽入口 IN來供 應液體1藉由配置成自該等入口 IN向外呈放射狀的複數 ' 個離散出口 OUT來移除液體。該等入口 IN及OUT可能係配 • 置於板内,該板在其中心具有一孔並經由該孔來投射該 投影光束。藉由該投影系統PL之一側上的一溝槽入口以來 供應液體,而藉由該投影系統PL之另一側上的複數個離散 出口0UT來移除液體,從而在該投影系統PL與該基板觀 φ 間產生—液體薄膜之流動。選擇入口 IN與出口 0UT之哪一 組合以供使用可取決於該基板W移動之方向(入口 IN與出 口 OUT之其他組合則不起作用)。 有人提出採用一局部化液體供應解決方式之另一浸泡式 微影解決方式,其為該液體供應系統提供一密封部件,該 密封部件會沿著該投影系統之最終元件與該基板台間的空 間之至少一部分邊界延伸。圖5中說明此一解決方式。雖 然s亥密封部件在Z方向(在該光軸之方向)上可能有一定的 相對移動’但在該XY平面中其實質上係相對於該投影系 103707.doc -15- 1308674 統而固定。在該密封部件及 體。 |仟及该基板表面之間會形成一密封 ’考圖5 &存庫1G在投影系統影像區域周圍對基板形 成非接觸式密封,以便使液體 便及體限於填充基板表面與投影系
L終元件間的空間。該貯存器係藉由定位於投影系統PL 、兀件下方及周圍的密封部件12而形成。讓液體進入該 技影系統下方及該密封部件12内的㈣。該密封部件咖 伸略高於該投㈣統之最終元件,而液體位準上升高於該 最終兀件以便提供-液體緩衝劑。密封部件12具有一内部 ^邊’在-項具體實施例中,該内部周邊於上端處會與該 投影系統之形狀或其最終元件之形狀非常一致,而且可能 係圓形。在底部’㈣周邊與影像區域之形狀接近一致,b 例如其可為矩形,但實際情況不必如此。 藉由介於該密封部件12的底部與該基板寶的表面之間的 氣體捃封件16,將該液體限制於該貯存器内。該氣體密 封件係藉由氣體(例如,空氣或合成空氣)而形成,但是在 -項具體實施例中,在壓力下經由入口 15向密封部件㈣ 基板之間的間隙提供&或另一惰性氣體,並經. 、印弟一出口 14來擷取該氣體。該氣體入口 15上的過壓、 说弟一出口 14 上的真空位準及該間隙之幾何結構係配置成使得有—向 的1¾速度氣流限制該液體。例如,美國專利申这 第 10/705,783號中揭示此一系統,該案之全部内 η备係以弓丨用 的方式併入於此。 圖6及圖7說明依據本發明之一項具體實施例 W < 一液體移 103707.doc • 16 - 1308674 除器件20,其中圖7係圖6中部分之一放大視圖。該液體移 除器件20包含一室,該室係保持處於一微小的負壓&且填 充有該浸泡液體。該室之下部表面係由具有大量小電洞 . (例如,直徑dhole在5至50 μιη範圍内)之一薄板21形成,且 • 保持一超過一欲移除液體的表面(例如,基板W之表面)之 兩度hgap在50至3 00 μηι範圍内。在一項具體實施例中,穿 孔板21至少略具親水性,即,與該浸泡液體(例如,水)之 接觸角小於90。。 負壓pc使得形成於該穿孔板21中的孔内之彎月形板22防 止將氣體抽吸進該液體移除器件之室中。但是,當該板21 接觸到該表面W上的液體時,無彎月形板來限制流動,而 • 液體可自由地流入該液體移除器件之室中。此一器件可從 一基板W之表面移除大部分液體,但可保留一液體薄膜, 如圖所示。 為改良或最大化液體移除,該穿孔板21應盡可能薄,而 • 該液體内的壓力Pgap與該室内的壓力Pc之間的壓力差應盡 可能高,而Pe與該間隙内的氣體壓力卩仏之間的壓力差必須 低得足以防止將數量相當多的氣體抽吸進該液體移除器件 2〇不疋總忐防止將氣體抽吸進該液體移除器件,而該 穿孔板將防止大的不均勻流以免其引起振動。藉由電鑄成 形光蝕刻及/或雷射切割而製成的微篩網可用作該板 21。可以適用荷蘭艾比克的Stork Vee〇 B v.公司製作之篩 網。還可使用其他多孔板或多孔材料之實心塊,只要孔尺 寸適合於讓-彎月隸在使用日夺會㈣力錄件下保 103707.doc -17- 1308674 持不變即可。 圖8顯示依據本發明之一項特定具體實施例併入一浸泡 帽IH之一密封部件12内之一液體移除器件。圖8係該密封 部件12之一側之一斷面圖,其形成至少部分圍繞該投影系 . 統凡的曝露區域(圖8未顯示)之一環(本文中所使用的 「環」可為圓形、矩形或任何其他形狀)。在此項具體實 施例中,藉由鄰近該密封部件12的下側最内部邊緣之一環 籲 形室31來形成該液體移除器件20。該室31之下部表面係藉 由一多孔板30而形成,如上所述。環形室31係連接至一或 多個合適的泵,以從該室移除液體並保持所需的負壓。在 - 使用時,該室3 1充滿液體但在此為簡潔起見而顯示為空。 - 該環形室31之外部係一氣體擷取環32與一氣體供應環 33。該氣體供應環33在其下部部分具有一窄狹縫且在使得 逃逸出該狹缝的氣體形成一氣刀34之一壓力下供應氣體 (例如,空氣、人造空氣或沖洗氣體)。藉由連接至該氣體 φ 擷取環32之合適的真空泵來擷取形成該氣刀之氣體,而使 得所產生的氣流向内驅動任何殘餘液體,其中可藉由詨液 體移除器件及/或該等真空泵(其應能夠容許該浸泡液體蒸 汽及/或小液滴)來移除該殘餘液體。但是,由於藉由节液 體移除器件20來移除大多數液體,因此經由該真空系統而 移除的少量液體不會引起不穩定的流及其所引起的振動。 儘官本文將該室31、氣體擷取環32、氣體供應環33及其 他環說明為環,但其不一定係圍繞該曝露區域或係完敕 在—項具體實施例中,此類入口及出口可以僅係圓形、矩 103707.doc -18- 1308674 形或其他類创的;μ t & i的7L件而部分沿該曝露區域之一或多側延 伸’例如,圖2、3及4所示。 ,在圖8心之裝置巾,經由氣體擷取環32而擷取形成該 =的大多數氣體’但是部分氣體可流人該浸泡帽周圍的 ㈣中而可能干擾干涉位置測量系統if。可藉由在該氣刀 外側提供—額外的氣體擷取環35來防止出現此情形,如圖 8A所示。 由於在此項具體實施例中,該液體移除系統在高度超過 。土板W或該基板台WT的表面5 〇至3 〇〇叫時即便不能移 除全部亦可移除大部分浸泡液體,與使用—氣體軸承來限 制該浸泡液體之情況相比,對密封部分的垂直位置之苛刻 要求更少。此點表示可藉由一更簡單的致動及控制系統來 對該密封部件作垂直定位。還表示《基板台及基板平坦 度之要求減小,從而更容易構造諸如感測器之類需要提供 於該基板台WT的上部表面中之器件。 在不進行蒸發之條件下移除大部分液體還表示,可減小 溫度梯度,避免該基板之熱變形’從而防止由此引起的刻 印誤差。可藉由在氣刀中使用濕潤氣體(例如,相對濕度 約為50至75%)並結合約100至5〇〇 mbar之壓力降及約汕至 200 Ι/min之流動速率來使蒸發進一步最小化。 圖9至11顯示本發明之此項具體實施例之變化。該些變 化與上面所述者相同,僅在有關該多孔板3〇的形狀方面有 所不同。 如圖9所示,可將該多孔板3〇a設定成一小角度,以使其 103707.doc -19· 1308674 =振動。如同上述具體實施例-樣’一微網筛可用作 同樣如結合上述具體實施例所說明者一樣,可在該多孔 &供譬曲或一尖銳邊緣以控制該浸泡液體1 1之彎 月开V板位置。同樣,移除任何殘餘液體皆可能受到較高濕 度較大流置氣刀34之影響,而該氣刀之壓力亦可用於 制該彎月形板位置。 、工
本發月之此項及其他具體實施例中,可將在該浸泡液 體中的㈣部件的部分之形狀調整成使得該密封部件^的 垂直移動提供所需程度的衰減。特定言之,該密封部件之 一限制該液體nm通道的部分之寬度Lda可以係選擇 成提:所需衰減,而因此亦對面積作此選擇。衰減數量將 由4衰減區域之面積、其超過該基板〜或基板台wT之高 度hda、該浸泡液體之密度广及其黏度7決定。衰減可使得 該密封部件之位置因振動而產生(例>,由不均勻的流體 流量引起)的變化減小。 亦可使用-多孔板41來控制—溢流沒極4()之流,如圖13 所示°圖13的溢流沒極可應㈣本文所說明的本發明之任 何具體實施财。該溢流祕係提供於該㈣部件Η之一 上部表面而與該密封部件12的中心有_相對較大的半徑。 若該投影系統PL之最終元件與該基板w之間的空間變成充 滿過多的浸泡液體’則多餘的液體會流到該密封部件以 頂部上並流進該汲極40。該汲極4〇 一般充滿液體且保持於 -微小的負壓。該多孔板41防止將氣體抽吸進該溢流汲 103707.doc -21 1308674 極’但允許在需要時將液體汲取掉。該多孔板亦可以係設 疋為與水平成一微小角度。 在提供於一從該浸泡帽IH獲取雙相流的液體汲取系統中 之一歧管50中,亦可使用一多孔分離器。如圖14所示,將 該雙相流51排進一歧管室51,在該歧管室51内該液體與氣 體係分離。藉由一氣體出口 52從該歧管頂部移除該氣體, 藉由一合適的真空泵及壓力控制器讓該氣體出口 52保持 約-0·1 barg之壓力。一液體移除管53延伸至該歧管底部附 近且藉由一多孔板54而封閉。讓該液體移除管幻保持為低 於該多孔板54的泡點之一壓力,例如,約_〇 5 barg。藉由 • 此配置,即使該歧管内的液體位準下降至低於該管53之底 部,亦不會將任何氣體抽吸進該歧管,從而防止該歧管53 之壓力出現不需要的波動,此波動可能會傳達回給該浸泡 帽IH並引起干擾。 圖15顯示該歧管之一變化。此變化與圖14所示者相同, # 丨如下面所說明’其中該歧管係與其周圍環境熱隔離。穿 過該歧管之真空流會引起該浸泡液體之蒸發,從而產生冷 卻。若該歧管係定位成接近該微影装置之一溫度敏感部分 (例如,參考或度量衡框架)或與該部分熱接觸,則此類冷 卻可能具有不需要的效果。 ^ 因此,該歧管係形成為一雙壁槽,其包含内部槽5〇&與 外部槽50b ,而在該等内部與外部槽的壁之間有一溫度受 控制的液體流(例b,水)。該溫度受控制液體係供應2 入口 55而於出口 56移除。將一系列擋板57配置於該等二槽 103707.doc -22- 1308674 的壁之間的空間内以確保無任何停滞液體區域。為避免由 »亥雙壁槽k供的熱隔離出現橋接,任何槽板皆不接觸内部 與外部槽。溫度受控制的液體之流體速率係決定成確保該 外部槽50之溫度偏差不超過任何附近的溫度敏感性組件所 施加的限制。較佳的係,還在該外部槽與任何附近的溫度 敏感性組件之間提供一空氣間隙或額外的熱絕緣。 圖16顯示可用於本發明之具體實施例中的一液體供應系 統60。其串聯地包含:一浸泡液體源61,例如,超純液體 之一製造供應;一恆定流量限制器62 ; 一可變流量限制器 63 ;以及具有一外部分接頭之一壓力調整器64、一可變限 制65與一恆定限制66,其係定位於該浸泡帽m跟前。用於 該壓力調整器64之前導線係連接於該可變限制65之下游, 而因此該恆定限制66之輸入處於一恆定的壓力,因此流入 該浸泡帽之流具有恆定的壓力及速率。 圖17顯示一替代性的液體供應系統6〇,。此與系統6〇相 同,僅下述方面有所不同。替代該調整器64及固定限制66 的係,提供一前向壓力調整器67及反向壓力調整器68。還 提供二個壓力計69a、69b。該正向壓力調整器67保持其壓 力下游處於一預定位準,而該反向壓力調整器保持其壓力 上游處於一預定位準,在二情況下皆與流動速率無關。因 此,該可變流量限制器以恆定的上游及下游壓力進行操 作,從而避免不穩定性,可藉由調整由該等壓力調整器 67、68及該可變流量限制器65借助於該等壓力感測器 69a、69b(其亦可用於監視目的)而設定的壓力位準來調整 103707.doc -23· 1308674 該流動速率。 在一微影裝置中,將一基板固持於一基板架(常稱為一 凸點板、凸節板或夾頭)上,該基板架包含直徑與在主要 表面上具有大量小凸點或凸節的基板相同之一平板。該基 板架係放置於在該基板架頂部上面的基板台(鏡組塊)及基 . 板之一凹陷内。在該基板台與架之間以及在該架與基板之 間的空間内形成一真空,以便藉由該基板上的大氣壓力將 3亥基板及架夾緊於適當位置。該基板台内的凹陷必定略大 _ 於該基板架及該基板以容納基板尺寸及放置狀況之變化。 因此,在該基板邊緣周圍有一窄溝槽或溝渠,其中可收集 浸泡液體。儘管該液體不會在該處造成任何損害,但其可 能被該浸泡帽内之一氣體軸承或氣刀吹出該溝槽。該基板 或基板臺上所產生的小滴在與該浸泡帽下的液體彎月形板 相遇時可能產生氣泡。 該基板架一般係由具有較低熱膨脹係數之一材料(例 如’ Zerodur或ULE)製成。某些此類材料係多孔材料,而 在該情況下,對該等表面孔進行填充以防止孔内捕獲污染 物。但是’建議在該基板架之邊緣周圍及/或在一周邊區 域内保持垓4表面孔不受填充。因此,當該基板架係用於 一浸泡微影裝置中時,進入該溝槽的浸泡液體將進入該基 板架之孔而不會被該氣體軸承或氣刀吹出。若該基板架具 有一開放單元結構,可藉由將該基板及架夾緊的真空系統 將已進入其孔之浸泡液體移除至該基板台。 如圖18所示’連接至一容積空間(從該容積空間僅會經 103707.doc •24· 1308674 由一具有親水壁72的窄毛細管71來擷取液體)之一擷取通 道70可以係配置成使得以適當的負壓-p來擷取液體(例如, 水),但是當該容積空間中不存在液體時,一弯月形板73 防止氣體進入(例如,空氣)。相反,如圖19所示,經由一 具有親水壁82的毛細管8 1而連接至該容積空間之一擷取通 道80擷取氣體(例如’空氣),但是當存在液體(例如,水) 時’彎月形板83防止進一步流動。該些配置所需要的負麼 p之精確位準將取決於所涉及的液體及氣體、該毛細管之 尺寸及該液體與該毛細管壁之接觸角度。但是,對於寬度 0.05 mm之毛細管,20 mbar之負壓適合於實現有選擇地棟 取水或空氣。 可使用此類擷取配置來選擇性地移除來自該微影裝置中 任何所需部分之液體或氣體。圖20a至d顯示一特別有利之 用法’其中液體擷取通道70及氣體擷取通道80皆係連接至 該基板台WT中圍繞該基板w的邊緣之一溝渠。當該基板 邊緣在該投影透鏡下並因此使得該溝渠填充有液體時,通 道70擷取液體以使得有一向下的液體流。此舉抽吸(例如) 因不完全填充而可能形成於該溝渠内的任何氣泡。此舉使 得氣泡到達一位置,在此位置可經由通道80來擷取該氣 體’但該等氣泡不會進入該通道70。當該基板邊緣不再處 於該投影透鏡下時,可快速清空該溝渠。以此方式,可防 止氣泡逃逸而干擾成像。藉由將該液體流與氣流分離,而 避免可引起振動之不穩定性並使得蒸發之冷卻效應最小 化0 103707.doc -25- 1308674 利申請案第。3257〇72 3號中揭示一種雙級浸泡 概念。此一裝置具有二個基板台,用以支撐
基'扳。水平測量可利用第—朽$ A 弟位置處的基板台來實施,其 !包液體;而曝光則可利用第二位置處的-基板台來 只施’其中存在浸泡液體。或者,料置亦可能僅具有一 基板台。 儘管在本文中可能㈣參考在製造積體迴路時使用的微 影裝置’但應瞭解本文所說明的微影裝置可能還有其他應 用,例如,製造積體光學系統、磁域記憶體之導引幻貞測 圖案、平板顯示器、液晶顯示器(LCD)、薄膜磁頭等。熟 習此項技術者將明白,在此類替代性應用之背景下,本文 所使用的術語「晶圓”戈「晶粒」可被分別視為較一般術 語「基板」或「目標部分」的同義詞。本文所參考的基板 可在曝光之前或之後,在如循跡(通t可將光阻層塗佈到 基板上並顯影曝光光阻劑的工具)、度量衡工具及/或檢驗 工具中進行處理。在可應料情Μ,本文之揭示内容可 應用於此類及其他基板處理工具。進一步,例如為了產生 一多層積體迴路,可對該基板進行多次處理,因而本文所 用術語「基板J亦可指一已經包含多個已處理層之基板。 本文所使用的術語「輕射」與「光束」涵蓋所有類型的 電磁輻射’包括紫外線(υν)車畐射(例如,具有約365、 248、193、157或 126 nm之波長)。 如情況允許’術語「透鏡」可指任一類光學,且件或各種 類型光學組件之組合,包括折射與反射型光學組件。 103707.doc -26· 1308674 雖然上面已說明本發明之特定具體 丹體貫施例,但應明白, 本發明可以上面未說明的其他方式來 " 々巧求貫施。例如,本 可採取以下形式:一電腦程式,其 機15可讀取指令的 一或更多序列以說明如上所揭示之 ,或者,一資料儲 存媒體(如半導體記憶體、磁碟或光 Λ祀磲),其具有儲存於其 中的此一電腦程式。
本發明可應用於任何浸泡式微影裝置,尤其是#並不 僅限於u述類型的微影裝置。該裝置中使用的浸泡液體 依據所需特性及所使用的曝光輻射之波長而可具有不同成 分。對於193 nm之曝光波長,可使用超純水或以水為主的 成分,而基於此原因有時將該浸泡液體稱為水,而可以使 =諸如「親水」、「疏水」、「濕度」等與水有關的術語。但 疋應瞭解,本發明之具體實施例可結合其他類型的水來 使用’在&情況下應考慮、&與該浸泡液體冑_的等效術語 來替代此類與水有關的術語。 以上說明希望起說明作用而非限制作用。因此,熟習此 項技術者將明白,可依照說明對本發明進行修改,而不會 脫離下列申請專利範圍之範疇。 【圖式簡單說明】 現在將僅藉由範例方式並參考隨附示意圖而說明本發明 之具體實施例’其中對應的參考符號指示對應的零件,並 且其中: 圖1說明依據本發明之一項具體實施例之一微影裝置; 圖2及3說明一微影投影裝置中使用的一液體供應系統; 103707.doc -27- 1308674 圖4說明一微影投影裝置中使用的另一液體供應系統; 圖5說明一微影投影裝置中使用的另一液體供應系統; 圖6說明依據本發明之一項特定具體實施例的液體移除 器件; 圖7係圖6的部分之一放大視圖; 圖8說明依據本發明之一項具體實施例之一液體供應及 移除系統; 圖8a說明圖8的液體供應及移除系統之一變化; 圖9說明圖8的液體供應及移除系統之一變化; 圖1 〇說明圖8的液體供應及移除系統之另一變化; 圖11說明圖8的液體供應及移除系統之另一變化; 圖12說明依據本發明之另一項特定具體實施例之一液體 供應及移除系統; 圖13說明圖12的液體供應及移除系統之一變化; 圖14說明依據本發明之另一項特定具體實施例之—液體 移除系統中之一歧管; 圖15說明圖14的歧管之一變化; 圖16說明可用於本發明之具體實施例之一液體流調整系 統; ' 圖17說明圖16的液體流調整系統之一變化; 圖18及19說明分別用於擷取液體及氣體之疏水及親水 細管;以及 圖20a至20d說明使用疏水及親水毛細管以從一 乂思分離 地擷取液體與氣體。 103707.doc •28· 1308674
【主要元件符號說明】 10 貯存器 11 液體 12 密封部件 14 第一出口 15 氣體入口 16 氣體密封件 20 液體移除器件 21 穿孔板 22 彎月形板 30 多孔板 31 環形室 32 氣體擷取環 33 氣體供應環 34 氣刀 35 氣體擷取環 36 液體軸承 38 雙相擷取室 40 溢流汲極 41 多孔板 50 歧管 51 雙相流 52 氣體出口 53 液體移除管 103707.doc -29- 1308674 54 多孔板 55 入口 56 出口 57 擋板 60 液體供應系統 61 浸泡液體源 62 恆定流量限制器 63 可變流量限制器 64 壓力調整器 65 可變限制/可變流量限制器 66 恆定限制 67 前向壓力調整器 68 反向壓力調整器 70 擷取通道 71 毛細管 72 壁 73 彎月形板 80 擷取通道 81 毛細管 82 壁 83 彎月形板 11a 彎月形板 30a 多孔板 5 0a 内部槽 103707.doc -30- 1308674 外部槽 液體供應系統 壓力計 壓力計 光束輸送系統 聚光器 定位感測器 浸泡帽
照明系統(照明器) 溝槽入口 圖案化器件(如光罩) 支撐結構(如光罩台) 出口
50b 60’ 69a 69b BD CO IF IH IL IN MA MT OUT PL PM PW SO 投影系統 第一定位器 第二定位器 輻射源 W 基板 WT 基板台(如晶圓台) 103707.doc •31 -

Claims (1)

1308纖=5,專利申請案 r文_明專利範圍替換本(98年2十、申請專利範圍·· 月) 1.
投Π: 影系統將來自—圖索化器件之圖案 :射到-基板上、及具有之一液體供應系統係配置成向 ::影糸統與該基板之間的一空間供應一液體之微影投 影裝置,其所包含之一液體移除系統包括· 導官’其具有與—其令將會存在液體的容積空間相 鄰之一開口端; 夕孔4件,其係介於該導;I;之該端與該容積空間之 間’其中該多孔部件係與該基板的相對表面、—基板台 或兩者成一角度;以及 抽吸器件’其係配置成產生橫跨該多孔部件之 力差。 2. 3. 4. 5. 如明求項1之裝置,其中該液體移除系統係配置成移除 來自與該空間相鄰的容積空間之液體。 如叫,項2之裝置’其進一步包含至少部分圍繞該空間#件’而且其中該導管包含在該部件之—面對該基 板的表面中之一凹陷,該多孔部件封閉該凹陷。 如請求項3之裝置,其中該部件形成圍繞該空間之—閉 合迴路而該凹陷圍繞該部件之該整體而延伸。 :請求項3之裝置’其中該部件進一步包含一氣體供應 =路I在-面對該基板之表面内具有—出口以便形成 ^ 來攸忒基板之一表面移除殘餘液體,該氣刀係從 5玄凹陷向外呈放射狀定位。 6. 如請求項5之裝置, 其中該部件進一步包含具有一位於 103707-980217.doc 1308674 該凹陷與該氣 7·如請求項5之裝置路。 氣刀向外呈放鼾卜 牛進一步包含具有-從哕 卜呈放射狀定位的入口 攸该 8. 如請求項3之I 軋體擷取迴路。 、 1 ^中該部件進一步包含卜 迴路’其在-面對該基板之表面内具有體供應 一液體轴承來至少部分切該部件之重/以便形成 係從該凹陷向内呈放射狀定位。 1 ’该液體軸承 9. 如:求項3之裝置’其中,在使用期 而處於超過該基板之一從5〇至3〇〇 μ 件戈支揮 10. 如請求们之裝 ㈣圍内的高度。 之一邱侔 步包含至少部分圍繞該,, 之邛件,而且其中該導營白人士 闲艽忒工間 板的表面中之_凹陷,兮3肖部件之一背對該基 U·如請求項…:並:件封閉該凹陷。 用承項1之裝置,其中該液體移除 -歧管,w包含延伸進該歧二;= 12’::=置,該多孔部件具有直徑一 二如請求们之裝置’其中該多孔部件係、親水部件。 14. 一種态件製造方法,其包含: 使用投影系統將透過一液體之—圖 投射到-基板上:以& %輻射光束 :一由=跨對一容積空間之至少部分限制的多孔部 =S力差’而從該容積空間移除液體 口 Μ牛係與該基板的相對表面、— 、以 板台或兩者成一角 103707-980217.doc -2- 1308674 度。 15.如請求項14之方法,其中該容積空間與一包含該液體之 空間相鄰,透過該液體而投射該圖案化的光束。 如喷求項15之方法,其包含藉使用—至少部分圍繞該空 間的部件之一面對該基板的表面内之一凹陷,來從該容 積空間移除該液體’該多孔部件封閉該凹陷。 17 如叫求項16之方法,其中該部件形成圍繞該空間之—閉 合迴路而該凹陷圍繞該部件之該整體而延伸。 18.如請求項16之方法,其進一步包含從面對該基板之—表 面供應氣體,以便形成一氣刀來從該基板之一表面移除 殘餘液體,該氣體係供應於從該凹陷向外呈放射狀之一 位置。 19·如睛求項18之方法,其進一步包含從介於該凹陷與供應 該氣體之該位置之間的一位置移除氣體。 邛.如請求項18之方法,其進一步包含從供應該氣體之該位 置向外呈放射狀定位之一位置移除氣體。 21·如印求項16之方法,其進一步包含從面對該基板之一表 面供應氣體,以便形成一液體軸承來至少部分支撐該部 件之該重量,該液體係供應於從該凹陷向内呈放射狀之 一位置。 22·如請求項16之方法,其包含支撐一超過該基板之高度在 從50至300 μιη範圍内之該部件。 23.如請求項14之方法,其包含藉使用一至少部分圍繞該空 門的邛件之一为對該基板的表面内之一凹陷來從該容 積空間移除該液體,該多孔部件封閉該凹陷。 103707-980217.do, 1308674 24.如請求項14之方法,其包含經由一管從該容積空間移除 該液體,該管延伸進入一包含該容積空間的液體/氣體歧 管之一下部部分。 103707-980217.doc -4-
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