CN100526987C - 光刻装置和器件制造方法 - Google Patents
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Abstract
一种光刻投影装置,其设置成使用投影系统来将图案从图案形成装置投射到衬底上,具有设置成可将液体供给到所述投影系统与衬底之间的空间中的液体供给系统,还包括液体去除系统,所述液体去除系统包括:具有与存在有液体的体积相邻的敞开端的导管;位于所述导管的端部与所述体积之间的多孔件;设置成可在所述多孔件上形成压力差的抽吸装置;和至少部分地围绕着所述空间的构件,所述导管包括处于所述构件的朝向衬底的表面中的凹部,所述多孔件封闭了所述凹部,所述多孔件具有直径处于5至50微米的范围内的孔。本发明还提供了一种器件制造方法。
Description
技术领域
本发明涉及一种光刻装置,以及一种用于制造器件的方法。
背景技术
光刻装置是可在衬底、通常是衬底的目标部分上施加所需图案的机器。光刻装置例如可用于集成电路(IC)的制造中。在这种情况下,可采用图案形成装置来产生将形成于IC的单个层上的电路图案,该图案形成装置也称为掩模或分划板。该图案可被转移到衬底(如硅晶片)上的目标部分(例如包括一个或多个管芯)上。图案的转移通常借助于成像到设于衬底上的一层辐射敏感材料(抗蚀剂)上来实现。通常来说,单个衬底包含被连续地形成图案的相邻目标部分的网络。已知的光刻装置包括所谓的步进器,其中通过将整个图案一次性地曝光在目标部分上来照射各目标部分,还包括所谓的扫描器,其中通过沿给定方向(“扫描”方向)由辐射光束来扫描图案并以平行于或反向平行于此方向的方向同步地扫描衬底来照射各目标部分。还可以通过将图案压印在衬底上来将图案从图案形成装置转移到衬底上。
已经提出了可将光刻投影装置中的衬底浸入到具有相对较高折射率的液体如水中,以便填充投影系统的最后元件与衬底之间的空间。其目的是成像较小的特征,这是因为曝光辐射在液体中将具有更短的波长(液体的效果还被认为是增加了系统的有效数值孔径(NA),并且增大了聚焦深度)。还已经提出了其它的浸液,包括其中悬浮有固体颗粒(如石英)的水。
然而,将衬底或衬底及衬底台浸入在液体池(例如可见美国专利US 4509852,其通过引用整体地结合于本文中)意味着,在扫描曝光期间很大一部分液体必须被加速。这就要求有额外的或更大功率的电动机,液体中的湍流可能会导致不希望有的和无法预测的效果。
针对液体供给系统所提出的一种解决方案是,仅在衬底的局部区域上以及在投影系统的最后元件与衬底(衬底通常具有比投影系统的最后元件更大的表面积)之间提供液体。在PCT专利申请No.WO99/49504中公开了已经提出的针对此而设置的一种解决方案,其通过引用整体地结合于本文中。如图2和3所示,液体经由衬底上的至少一个入口IN且优选沿着衬底相对于最后元件的运动方向来供给,并且在已经在投影系统下方通过之后经由至少一个出口OUT排出。这就是说,当衬底在元件下方沿着-X方向被扫描时,液体在元件的+X侧供给并且在-X侧被吸走。图2示意性地显示了这一设置,其中液体经由入口IN来供给,并且经由与低压源相连的出口OUT而在元件的另一侧被吸走。在图2中,液体沿着衬底相对于最后元件的运动方向来供给,但这在此例中不是必须的。入口和出口可具有围绕着最后元件的各种定位和数量,在图3中显示了一个例子,其中围绕着最后元件以规则的图案设置了位于各侧上的四组入口和出口。
发明内容
在这里所介绍的浸入式光刻装置中,浸液的去除通常涉及到两相流动,即浸液与周围气体(如空气)或来自用于限制浸液的气封的气体相混合。这种两相流动不是很稳定,尤其是在采用较大压力差来产生用于限制浸液的强劲气流或保证所有液体均被收集起来时,这样所导致的振动是不希望有的。高压气流还可能会使残留在衬底上的液体被蒸干,导致了热梯度。泄漏到干涉光束路径中的气流还会影响衬底台位置测量的精度,这是因为干涉仪对干涉光束路径中的气体的折射率变化十分敏感,这种变化例如可因温度、压力和湿度的变化所引起。
因此,例如提供一种用来从衬底附近有效地除去液体且不会产生显著的振动或其它干扰的装置将会是有利的。
根据本发明的一个方面,提供了一种光刻投影装置,其设置成可使用投影系统来将图案从图案形成装置投射到衬底上,具有设置成可将液体供给到投影系统与衬底之间的空间中的液体供给系统,还包括液体去除系统,包括:
具有与液体可能存在的体积相邻的敞开端的导管;
位于导管端部与该体积之间的多孔件;和
设置成可在多孔件上形成压力差的抽吸装置。
根据本发明的另一方面,提供了一种器件制造方法,包括:
采用投影系统来将图案化的辐射光束经由液体投射到衬底上;和
通过在多孔件上提供压力差来从某一体积中除去液体,其中该多孔件至少部分地限制了该体积。
附图说明
下面将仅通过示例的方式并参考示意性附图来介绍本发明的实施例,在附图中对应的标号表示对应的部分,其中:
图1显示了根据本发明的一个实施例的光刻装置;
图2和3显示了用于光刻投影装置的液体供给系统;
图4显示了用于光刻投影装置的另一液体供给系统;
图5显示了用于光刻投影装置的另外一个液体供给系统;
图6显示了根据本发明一个特定实施例的液体去除装置;
图7是图6中一部分的放大视图;
图8显示了根据本发明一个特定实施例的液体供给和去除系统;
图8a显示了图8所示液体供给和去除系统的一个变型;
图9显示了图8所示液体供给和去除系统的一个变型;
图10显示了图8所示液体供给和去除系统的另一个变型;
图11显示了图8所示液体供给和去除系统的另外一个变型;
图12显示了根据本发明另一特定实施例的液体供给和去除系统;
图13显示了图12所示液体供给和去除系统的一个变型;
图14显示了根据本发明另一特定实施例的液体去除系统中的歧管;
图15显示了图14所示歧管的一个变型;
图16显示了用于本发明实施例中的液体流量调节系统;和
图17显示了图16所示液体流量调节系统的一个变型;
图18和19显示了用来分别抽取液体和气体的疏水性和亲水性毛细管;和
图20a到20d显示了使用疏水性和亲水性毛细管来独立地从通道中抽取液体和气体。
具体实施方式
图1示意性地显示了根据本发明的一个实施例的光刻装置。该装置包括:
-构造成可调节辐射光束PB(例如UV辐射或DUV辐射)的照明系统(照明器)IL;
-构造成可支撑图案形成装置(例如掩模)MA的支撑结构(例如掩模台)MT,其与构造成可按照一定参数精确地定位图案形成装置的第一定位装置PM相连;
-构造成可固定衬底(例如涂覆有抗蚀剂的晶片)W的衬底台(例如晶片台)WT,其与构造成可按照一定参数精确地定位衬底的第二定位装置PW相连;和
-构造成可将由图案形成装置MA施加给投影光束PB的图案投射在衬底W的目标部分C(例如包括一个或多个管芯)上的投影系统(例如折射型投影透镜系统)PL。
照明系统可包括用于对辐射进行引导、成形或控制的多种类型的光学部件,例如折射式、反射式、磁式、电磁式、静电式或其它类型的光学部件或其任意组合。
支撑结构支撑即承受了图案形成装置的重量。它以一定的方式固定住图案形成装置,这种方式取决于图案形成装置的定向、光刻装置的设计以及其它条件,例如图案形成装置是否固定在真空环境下。支撑结构可使用机械、真空、静电或其它夹紧技术来固定住图案形成装置。支撑结构例如可为框架或台,其可根据要求为固定的或可动的。支撑结构可保证图案形成装置可例如相对于投影系统处于所需的位置。用语“分划板”或“掩模”在本文中的任何使用可被视为与更通用的用语“图案形成装置”具有相同的含义。
这里所用的用语“图案形成装置”应被广义地解释为可用于为辐射光束的横截面施加一定图案以便在衬底的目标部分中形成图案的任何装置。应当注意的是,例如如果图案包括相移特征或所谓的辅助特征,那么施加于辐射光束中的图案可以不精确地对应于衬底目标部分中的所需图案。一般来说,施加于辐射光束中的图案将对应于待形成在目标部分内的器件如集成电路中的特定功能层。
图案形成装置可以是透射式的或反射式的。图案形成装置的例子包括掩模、可编程的镜阵列和可编程的LCD面板。掩模在光刻领域中是众所周知的,其包括例如二元型、交变相移型和衰减相移型等掩模类型,还包括各种混合式掩模类型。可编程镜阵列的一个例子采用微型镜的矩阵设置,各镜子可单独地倾斜以沿不同方向反射所入射的辐射光束。倾斜镜在被镜矩阵所反射的辐射光束中施加了图案。
这里所用的用语“投影系统”应被广义地理解为包括各种类型的投影系统,包括折射式、反射式、反射折射式、磁式、电磁式和静电式光学系统或其任意组合,这例如应根据所用的曝光辐射或其它因素如使用浸液或使用真空的情况来适当地确定。用语“投影透镜”在本文中的任何使用均应被视为与更通用的用语“投影系统”具有相同的含义。
如这里所述,此装置为透射型(例如采用了透射掩模)。或者,此装置也可以是反射型(例如采用了反射掩模)。
光刻装置可以是具有两个(双级)或多个衬底台(和/或两个或多个掩模台)的那种类型。在这种“多级”式机器中,附加的台可以并联地使用,或者可在一个或多个台上进行预备步骤而将一个或多个其它的台用于曝光。
参见图1,照明器IL接收来自辐射源SO的辐射光束。辐射源和光刻装置可以是单独的实体,例如在辐射源为准分子激光器时。在这种情况下,辐射源不应被视为形成了光刻装置的一部分,辐射光束借助于光束传送系统BD从源SO传递到照明器IL中,光束传送系统BD例如包括适当的引导镜和/或光束扩展器。在其它情况下,该源可以是光刻装置的一个整体部分,例如在该源为水银灯时。源SO和照明器IL及光束传送系统BD(如果有的话)一起可称为辐射系统。
照明器IL可包括调节装置AD,其用于调节辐射光束的角强度分布。通常来说,至少可以调节照明器的光瞳面内的强度分布的外部和/或内部径向范围(通常分别称为σ-外部和σ-内部)。另外,照明器IL通常包括各种其它的器件,例如积分器IN和聚光器CO。照明器用来调节辐射光束,以使其在其横截面上具有所需的均匀性和强度分布。
投影光束PB入射在固定于支撑结构(例如掩模台MT)上的图案形成装置(例如掩模MA)上,并通过该图案形成装置而图案化。在穿过掩模MA后,投影光束PB通过投影系统PL,其将光束聚焦在衬底W的目标部分C上。如下将详述的浸罩(immersion hood)IH将浸液提供到投影系统PL的最后元件与衬底W之间的空间内。
借助于第二定位装置PW和位置传感器IF(例如干涉仪、线性编码器或电容传感器),衬底台WT可精确地移动,以便例如将不同的目标部分C定位在辐射光束PB的路径中。类似地,可用第一定位装置PM和另一位置传感器(在图1中未明确示出)来相对于辐射光束PB的路径对掩模MA进行精确的定位,例如在将掩模MA从掩模库中机械式地重新取出之后或者在扫描过程中。通常来说,借助于形成为第一定位装置PM的一部分的长行程模块(粗略定位)和短行程模块(精确定位),可实现掩模台MT的运动。类似的,采用形成为第二定位装置PW的一部分的长行程模块和短行程模块,可实现衬底台WT的运动。在采用分档器的情况下(与扫描器相反),掩模台MT可只与短行程致动器相连,或被固定住。掩模MA和衬底W可采用掩模对准标记M1,M2和衬底对准标记P1,P2来对准。虽然衬底对准标记显示为占据了专用目标部分,然而它们可位于目标部分之间的空间内(它们称为划线路线对准标记)。类似的,在掩模MA上设置了超过一个管芯的情况下,掩模对准标记可位于管芯之间。
所述装置可用于至少一种下述模式中:
1.在步进模式中,掩模台MT和衬底台WT基本上保持静止,而施加到投影光束上的整个图案被一次性投影到目标部分C上(即单次静态曝光)。然后沿X和/或Y方向移动衬底台WT,使得不同的目标部分C被曝光。在步进模式中,曝光区域的最大尺寸限制了在单次静态曝光中所成像的目标部分C的大小。
2.在扫描模式中,掩模台MT和衬底台WT被同步地扫描,同时施加到投影光束上的图案被投影到目标部分C上(即单次动态曝光)。衬底台WT相对于掩模台MT的速度和方向由投影系统PS的放大(缩小)和图像倒转特性来确定。在扫描模式中,曝光区域的最大尺寸限制了单次动态曝光中的目标部分的宽度(非扫描方向上),而扫描运动的长度决定了目标部分的高度(扫描方向上)。
3.在另一模式中,掩模台MT基本上固定地夹持了可编程的图案形成装置,而衬底台WT在施加到投影光束上的图案被投影到目标部分C上时产生运动或扫描。在这种模式中通常采用了脉冲辐射源,可编程的图案形成装置根据需要在衬底台WT的各次运动之后或在扫描期间的连续辐射脉冲之间进行更新。这种操作模式可容易地应用于采用了可编程的图案形成装置、例如上述类型的可编程镜阵列的无掩模式光刻技术。
还可以采用上述使用模式的组合和/或变型,或者采用完全不同的使用模式。
在图4中显示了具有局部化液体供给系统的另一浸入式光刻解决方案。液体经由位于投影系统PL两侧上的两个槽式入口IN来供给,并经由设置在入口IN的径向外侧的多个分散出口OUT来除去。入口IN和出口OUT设置在一块板中,在该板的中心设有孔,投影光束经由该孔来投射。液体经由位于投影系统PL一侧上的一个槽式入口IN来供给,并经由设置在投影系统PL另一侧上的多个分散出口OUT来除去,这便导致了投影系统PL和衬底W之间的液体的薄膜式流动。选择使用入口IN和出口OUT的哪种组合取决于衬底W的运动方向(入口IN和出口OUT的另一种组合被停用)。
已经提出的具有局部化液体供给系统的另一浸入式光刻解决方案是提供带有密封件的液体供给系统,该密封件沿着投影系统的最后元件与衬底台之间的空间的至少一部分边界而延伸。这种解决方案显示于图5中。虽然在Z方向(光轴方向)上可能存在一些相对运动,然而密封件在XY平面内相对于投影系统基本上静止。在密封件和衬底表面之间形成了密封。
参见图5,储槽10形成了与投影系统成像区域周围的衬底之间的无接触式密封,使得液体被限制成填充了衬底表面与投影系统最后元件之间的空间。储槽由位于下方且围绕着投影系统PL的最后元件的密封件12形成。液体进入到投影系统下方的空间中并处于密封件12内。密封件12稍微延伸到投影系统最后元件之上一点,并且液面上升到最后元件之上,从而提供了液体缓冲。密封件12具有内周边,在一个实施例中,该内周边在上端处紧密地顺应着投影系统或其最后元件的形状,因此例如可以是圆形的。在底部处,该内周边紧密地顺应着成像区域的形状,例如为矩形,但并不一定要如此。
液体通过密封件12的底部与衬底W的表面之间的气封16而被限制在储槽中。气封由气体如空气或合成空气形成,但在一个实施例中它可以是氮气或另一惰性气体,其在压力下经由入口15提供到密封件12与衬底之间的间隙中,并经由第一出口14排出。气体入口15上的过压、第一出口14上的真空度以及间隙的几何形状设置成使得存在有限制了液体的向内高速气流。这种系统公开于美国专利申请No.10/705783中,该申请通过引用整体地结合于本文中。
图6和7显示了根据本发明一个实施例的液体去除装置20,其中图7是图6的一部分的放大视图。液体去除装置20包括保持在轻微负压pc下并且填充有浸液的腔室。该腔室的下表面由具有大量小孔、例如直径dhole处于5到50微米范围内的小孔的薄板21形成,并且保持在距将除去液体的表面即衬底W的表面为50到300微米范围内的高度hgap处。在一个实施例中,带孔板21是至少稍具亲水性的,即具有相对于浸液如水为小于90度的接触角。
负压pc设置成使得形成于带孔板21的孔中的弯月面22可防止气体被抽入到液体去除装置的腔室内。然而,当板21与衬底W上的液体接触时,不存在会限制流动的弯月面,液体可以自由地流入到液体去除装置的腔室内。如图所示,尽管残留有液体的薄膜,然而这种装置仍可从衬底W的表面上除去大多数液体。
为了增加液体去除或使之最大化,带孔板21应当尽可能薄,液体压力pgap与腔室压力pc之间的压力差应当尽可能高,同时pc与间隙内的气体压力pair之间的压力差应当低得足以防止有相当大量的气体被抽入到液体去除装置20中。并不总是能够防止气体被抽入到液体去除装置中,但带孔板将阻止可能会导致振动的较大的不均匀流动。可采用通过电铸成型、光蚀刻和/或激光切割制成的微型筛网作为板21。适当的筛网可由荷兰Eerbeek的Stork Veco B.V.制成。也可以使用其它多孔板或多孔材料的实心体,假设孔隙适于在使用中会遇到的压力差下保持弯月面。
图8显示了根据本发明一个特定实施例的结合于密封件12中的液体去除装置以及浸罩IH。图8是密封件12一侧的剖视图,其形成了至少部分地围绕着投影系统PL(图8中未示出)的曝光区域的环(在本文中使用的环可以是圆形的、矩形的或任何其它的形状)。在该实施例中,液体去除装置20由靠近密封件12下侧的最内边缘的环形腔室31形成。腔室31的下表面由如上所述的多孔板30形成。环形腔室31与一个或多个适当的泵相连,以便从腔室中除去液体并保持所需的负压。在使用中,腔室31充满了液体,但这里为清楚起见其显示为空的。
在环形腔室31之外设有气体抽取环32和气体供给环33。气体供给环33在其下部中设有窄缝,并被供应了气体如空气、人造空气或冲洗气体,其处于使得逸出该窄缝的空气形成了气刀34的压力下。形成气刀的气体被与气体抽取环32相连的适当真空泵所抽取,使得所得气流驱动任何残余液体向内流动,在这里它被液体去除装置和/或真空泵所除去,该真空泵应当能够耐受浸液的蒸气和/或小液滴。然而,由于大部分液体被液体去除装置20所除去,因此经由真空系统所除去的少量液体不会导致会引起振动的不稳定流动。
虽然腔室31、气体抽取环32、气体供给环33以及其它环在这里被描述为环,但它们不必包围住曝光区域或是完整的。在一个实施例中,这种入口和出口可以仅是圆形、矩形或者部分地沿着曝光区域的一侧或多侧延伸的其它类型的元件,例如如图2、3和4所示。
在图8所示的装置中,形成气刀的大部分气体经由气体抽取环32来被抽取,然而一些气体可能会流入到浸罩周围的环境中,可能会干扰干涉式位置测量系统IF。这可通过在气刀外侧设置额外的气体抽取环35来阻止,如图8a所示。
由于在该实施例中液体去除系统可以除去大部分浸液(如果不是全部的话),同时其设置在比衬底W或衬底台WT的表面高50到300微米的高度处,因此与采用气体支承来限制浸液相比,对密封件垂直位置的要求更不严格。这意味着密封件可被垂直地定位,并且设置更简单的促动和控制系统。这还意味着对衬底台和衬底的平面度的要求降低,使得更容易构造需要设置在衬底台WT的上表面中的例如传感器的器件。
无蒸发地来去除大部分液体还意味着可以减小温度梯度,避免会导致印制误差的衬底热变形。通过使用气刀中的例如相对湿度为约50到75%的潮湿气体,并且结合使用约100到500毫巴的压力降和约20到200升/分钟的流率,还可以进一步减少蒸发。
在图9到11中显示了本发明的这一实施例的变型。除了多孔板30的形状之外,这些变型与上述相同。
如图9所示,多孔板30a可设置成稍具角度,使得它在外侧较高。多孔板30a与衬底W或衬底台WT之间的增大的间隙以及距曝光区域中心的距离改变了弯月面11a的形状,并且有助于保证浸入在液体中的区域具有或多或少稳定的宽度。
在图10和11所示的变型中,采用尖锐角部35来限制弯月面11a的位置,弯月面11a通过表面张力而保持在尖锐角部处。该尖锐角部可以为如图10所示的钝角,或者如图11所示的直角,气体抽取环32的形状可根据需要来调节。
在与图8类似的图12中显示了根据本发明的另一特定实施例的密封件。
在图12所示的实施例中,采用液体支承36取代单独的促动器来至少部分地支撑密封件12。该液体或水压的支承36由以已知方式在压力下提供给液体供给腔室37的浸液形成。该液体可经由两相抽取腔室38来除去,该腔室38与能够处理两相流动的适当泵(未示出)相连。气刀34以与上述实施例中相同的方式限制了浸液。
液体支承36的使用使得密封件12保持在衬底W或衬底台WT上方的约50到200微米的高度处,可以实现如上所述简便控制和平面度要求。同时,两相式抽取减少了需要在密封件12中形成的腔室的数量和需要设置的管的数量。
在两相式抽取腔室38的底面上设置了多孔板30,以便控制到其中的气体和液体的流动。通过适当地选择该板中的孔的尺寸、数量和排列,就可以使两相流动稳定,避免会导致振动的不均匀流动。如上述实施例中的那样,可采用微型筛网作为板30。
另外,针对上述实施例,在多孔板30中设置了倾斜的或尖锐的边缘,以便控制浸液11中的弯月面的位置。同样,可通过非常潮湿的较大流量的气刀34来去除任何残留液体,还可以利用气刀的压力来控制弯月面的位置。
在本发明的这一实施例以及其它的实施例中,密封件的处于浸液中的部分的形状可被调节成为密封件12的垂直运动提供了所需程度的缓冲。特别是,限制了液体11流到狭窄通道中的密封件部分的宽度Lda及其面积可被选择成提供了所需的缓冲。缓冲量可由缓冲区域的面积、其处于衬底W或衬底台WT上方的高度hda、浸液的密度ρ及其粘度η来决定。缓冲可以减轻例如因不均匀的流体流动所导致的振动所引起的密封件位置的变化。
如图13所示,还可采用多孔板41来控制溢流排放部分40中的流动。图13所示的溢流排放部分可应用于这里所述的本发明的任一实施例中。溢流排放部分设置在密封件12上表面中的距密封件12中心为较大半径的位置处。在投影系统PL的最后元件与衬底W之间的空间过度地填充了浸液时,多余液体将会在密封件12的顶部上流动并进入到排放部分40中。排放部分40通常充满了液体,并且保持在轻微的负压下。多孔板41可防止气体被抽入到溢流排放部分中,但可允许液体在需要时被排走。多孔板还可被设定成相对于水平呈很小的角度。
在从浸罩IH中抽走两相流动的液体排放系统中所设置的歧管50中,还可以使用多孔隔板。如图14所示,两相流动51被排放到歧管腔室51中,在其中将液体和气体分开。气体通过气体出口52而从歧管的顶部处排出,气体出口52通过适当的真空泵和压力控制器而保持在约-0.1巴的压力下。液体去除管53延伸到歧管底部的附近,并且由多孔板54所封闭。液体去除管53保持在低于多孔板54的沸腾点之下的压力如约-0.5巴下。通过这种设置,即使歧管中的液位下降到管53的底部之下,也不会有气体被抽出,这便阻止了歧管50中的压力产生任何不希望有的波动,这种波动可能会反馈回到浸罩IH中并引发紊流。
在图15中显示了该歧管的一个变型。在该变型中,与针对图14所示的情况一样且如下所述,歧管与其周围环境热隔绝。经过歧管的真空流将导致浸液蒸发,引起了冷却。如果歧管设置成更接近光刻装置的温度敏感部分如基准框架或测量框架或者与之形成热接触的话,那么这种冷却可能会具有不希望的效果。
因此,歧管形成为双壁式箱体,其包括内箱50a和外箱50b,在内箱和外箱的壁之间存在有温度受控液体如水的流动。温度受控液体在入口55处供给,在出口56处排出。在两个箱体的壁之间的空间内设置了一系列隔片57,以便保证不会有静液区。为了避免破坏双壁式箱体所提供的热隔绝,没有隔片会同时与内箱和外箱接触。温度受控液体的流率确定成可保证外箱50b的温度偏差处于由任何邻近的温度敏感器件所引起的限制之内。优选还在外箱和任何邻近的温度敏感器件之间设置气隙或额外的热隔绝。
在图16中显示了可在本发明实施例中使用的液体供给系统60。它包括串联在一起的:浸液供应源61,例如超纯液体的大容量供应源;恒流限流器62;变流限流器63;以及带有外部分接头的压力调节器64、变流限制结构65和恒流限制结构66,其正好设于浸罩IH之前。压力调节器64的导引管线连接在变流限制结构65的下游,因此到恒流限制结构66中的输入处于恒压下,因此到浸罩中的流动处于恒压和恒速下。
在图17中显示了另一液体供给系统60’。除了下述内容之外,其与液体供给系统60相同。作为压力调节器64和固定限制结构66的替代,设置了正压调节器67和背压调节器68。还设置了两个压力计69a,69b。正压调节器67可将其下游的压力保持在预定的水平,而背压调节器可将其上游的压力保持在预定的水平,在这两种情况下均与流率无关。因此,变流限制结构在稳定的上游和下游压力下工作,这便避免了不稳定。可通过调节由压力调节器67,68和变流限制结构65所设定的压力水平来调节该流率,这一过程可由还用作监控目的的压力传感器69a,69b来辅助进行。
在光刻装置中,衬底被固定在衬底固定器(通常称为圆丘板(pimple plate)、节瘤板(burl plate)或夹盘)上,该衬底固定器包括直径与衬底一样大的平板,在其主表面上设有大量的小圆丘或节瘤。衬底固定器设置在衬底台(镜块体)中的凹部内,而衬底设置在衬底固定器之上。在衬底台与固定器以及在固定器与衬底之间的空间中形成了真空,使得衬底和固定器被衬底之上的大气压力夹紧就位。衬底台中的凹部必须比衬底固定器和衬底稍大一些,以便适应衬底尺寸和布置方面的偏差。因此,围绕着衬底边缘形成了狭窄的凹槽或沟槽,其中可能会聚集浸液。虽然这些流体不会导致损伤,然而它会通过浸罩内的气体支承或气刀而流出凹槽。所产生的衬底或衬底台上的液滴在浸罩之下的液体弯月面遇到它们的时候可能会导致气泡产生。
衬底固定器通常由具有较低热膨胀系数的材料例如Zerodur或ULE制成。一些这种材料是多孔性的,在这种情况下,表面孔隙被填满以防止有污物夹杂于其中。然而,已经提出过可以使衬底固定器的边缘区域和/或周边区域周围的表面孔隙不被填充。这样,当在浸入式光刻装置中使用衬底固定器时,进入凹槽的浸液将进入到衬底固定器的孔隙中,不会通过气体支承或气刀流出。如果衬底固定器具有开孔式结构,那么已经进入到其孔隙内的浸液会被将衬底和固定器夹紧在衬底台上的真空而除去。
如图18所示,可以设置抽取通道70,其经由带有亲水性壁72的狭窄毛细管71与可从中仅抽取液体的体积相连,因此可通过适当的负压-p来抽取液体如水,但当该体积内无液体时,弯月面73可阻止气体如空气进入到其中。相反,如图19所示,经由带有疏水性壁82的毛细管81与该体积相连的抽取通道80可抽取气体如空气,但在存在有液体如水时,弯月面83可阻止进一步的流动。这些设置所需的负压-p的精确水平将取决于所涉及到的液体和气体、毛细管的大小以及液体与毛细管壁的接触角。然而,对于0.05毫米宽的毛细管而言,20毫巴的负压适合于选择性地抽取水或空气。
可采用这类抽取装置来从光刻装置的任意所需部分中选择性地除去液体或气体。在图20a-d中显示了一个特别优选的应用,其中液体抽取通道70和气体抽取通道80均与衬底台WT中的处于衬底W边缘周围的沟槽相连。当衬底边缘处于投影透镜之下并因此沟槽填满了液体时,通道70便抽取液体,使得存在有向下的液体流动。这就会向下抽吸可能因不充分填充所致的形成于沟槽中的任何气泡。这就将气泡带到气体可经由通道80被抽取的位置处,它们不会进入到通道70中。当衬底边缘不再处于投影透镜之下时,沟槽便被迅速排空。这样就可以防止会干涉成像的气泡逸出。通过将液体流与气体流分开,就可以避免可能会导致振动的不稳定,并且降低蒸发的冷却效果。
在欧洲专利申请No.03257072.3中,公开了双级浸入式光刻装置的概念。这种装置设有用于支撑衬底的两个台。采用处于第一位置中的台在无浸液的情况下进行调平测量,采用处于第二位置中的台在存在浸液的情况下进行曝光。或者,该装置仅具有一个台。
虽然在本文中具体地参考了IC制造中的光刻装置的使用,然而应当理解,这里所介绍的光刻装置还可具有其它应用,例如集成光学系统、用于磁畴存储器的引导和检测图案、平板显示器、液晶显示器(LCD)、薄膜磁头等的制造。本领域的技术人员可以理解,在这种替代性应用的上下文中,用语“晶片”或“管芯”在这里的任何使用分别被视为与更通用的用语“衬底”或“目标区域”具有相同的含义。这里所指的衬底可在曝光前或曝光后例如在轨道(一种通常在衬底上施加抗蚀层并对暴露出来的抗蚀层进行显影的工具)或度量和/或检查工具中进行加工。在适当之处,本公开可应用于这些和其它衬底加工工具中。另外,衬底可被不止一次地加工,例如以形成多层IC,因此,这里所用的用语“衬底”也可指已经包含有多层已加工的层的衬底。
这里所用的用语“辐射”和“光束”用于包括所有类型的电磁辐射,包括紫外线(UV)辐射(例如波长为365,248,193,157或126纳米)。
用语“透镜”在允许之处可指多种光学部件中的任意一种或其组合,包括折射式和反射式光学部件。
虽然在上文中已经描述了本发明的特定实施例,然而可以理解,本发明可通过不同于上述的方式来实施。例如在适当之处,本发明可采用含有一个或多个描述了上述方法的机器可读指令序列的计算机程序的形式,或者存储有这种计算机程序的数据存储介质(如半导体存储器、磁盘或光盘)的形式。
本发明可应用于任何浸入式光刻装置,尤其是但非唯一地用于上述那些类型。根据所需的性质和所用的曝光辐射的波长,在该装置中使用的浸液可具有不同的组分。对于193nm的曝光波长来说,可以采用超纯水或水基组分,为此,浸液有时称为水,也可以使用与水有关的术语,例如亲水性、疏水性、湿度等。然而应当理解,本发明的实施例可以使用其它类型的液体,在这种情况下,这种与水有关的术语应当被与所用浸液有关的等效术语来替代。
这些描述是示例性而非限制性的。因此,对本领域的技术人员来说很明显,在不脱离下述权利要求的范围的前提下,可以对本发明进行修改。
Claims (23)
1.一种光刻投影装置,其设置成使用投影系统来将图案从图案形成装置投射到衬底上,具有设置成可将液体供给到所述投影系统与衬底之间的空间中的液体供给系统,还包括液体去除系统,所述液体去除系统包括:
具有与存在有液体的体积相邻的敞开端的导管;
位于所述导管的端部与所述体积之间的多孔件;
设置成可在所述多孔件上形成压力差的抽吸装置;和
至少部分地围绕着所述空间的构件,所述导管包括处于所述构件的朝向衬底的表面中的凹部,所述多孔件封闭了所述凹部;
所述多孔件具有直径处于5至50微米的范围内的孔。
2.根据权利要求1所述的装置,其特征在于,所述液体去除系统设置成可从与所述空间相邻的体积中去除液体。
3.根据权利要求1所述的装置,其特征在于,所述构件形成了围绕着所述空间的封闭环,所述凹部围绕着整个所述构件延伸。
4.根据权利要求1所述的装置,其特征在于,所述构件还包括气体供给回路,其具有处于朝向衬底的表面中的出口以形成气刀,以便从所述衬底表面中去除残留液体,所述气刀位于所述凹部的径向外侧。
5.根据权利要求4所述的装置,其特征在于,所述构件还包括气体抽取回路,其具有位于所述凹部与气刀之间的入口。
6.根据权利要求4所述的装置,其特征在于,所述构件还包括气体抽取回路,其具有位于所述气刀径向外侧的入口。
7.根据权利要求1所述的装置,其特征在于,所述构件还包括气体供给回路,其具有处于朝向衬底的表面中的出口,以便形成气体支承以至少部分地支撑构件的重量,所述气体支承位于所述凹部的径向内侧。
8.根据权利要求1所述的装置,其特征在于,在所述衬底定位在所述构件之下时,所述构件被支撑在衬底之上的处于从50到300微米范围内的高度处。
9.根据权利要求1所述的装置,其特征在于,所述导管包括位于所述构件的背离衬底的表面中的另一凹部,所述多孔件封闭了所述另一凹部。
10.根据权利要求1所述的装置,其特征在于,所述液体去除系统包括液体/气体分离歧管,所述导管包括延伸到所述歧管下部中的管。
11.根据权利要求1所述的光刻装置,其特征在于,所述多孔件是亲水性的。
12.根据权利要求1所述的光刻装置,其特征在于,所述多孔件是带孔的板。
13.一种器件制造方法,包括:
采用投影系统来将图案化的辐射光束经由液体投射到衬底上;
提供导管,所述导管具有与存在有液体的体积相邻的敞开端;
提供至少部分地围绕着所述投影系统与衬底之间的空间的构件;和
通过多孔件上提供压力差来从某一体积中除去液体,其中所述多孔件位于所述导管的端部与所述体积之间,
其中所述导管包括处于所述构件的朝向衬底的表面中的凹部,利用所述凹部从所述体积中去除液体,所述多孔件封闭了所述凹部;
并且所述多孔件具有直径处于5至50微米的范围内的孔。
14.根据权利要求13所述的方法,其特征在于,所述体积邻近于包括有图案化光束可经其来进行投射的液体的空间。
15.根据权利要求13所述的方法,其特征在于,所述构件形成了围绕着所述空间的封闭环,所述凹部围绕着整个所述构件延伸。
16.根据权利要求13所述的方法,其特征在于,所述方法还包括向所述构件的朝向衬底的表面中提供气体以形成气刀,以便从所述衬底的表面中去除残留液体,所述气刀在所述凹部的径向外侧的位置处来供给。
17.根据权利要求16所述的方法,其特征在于,所述方法还包括从所述凹部和气刀供给位置之间的位置中去除气体。
18.根据权利要求16所述的方法,其特征在于,所述方法还包括从位于气刀供给位置的径向外侧的位置中去除气体。
19.根据权利要求13所述的方法,其特征在于,所述方法还包括向所述构件的朝向衬底的表面中供给液体,以便形成液体支承以至少部分地支撑所述构件的重量,所述液体在所述凹部的径向内侧的位置处来供给。
20.根据权利要求13所述的方法,其特征在于,所述方法还包括将所述构件支撑在所述衬底之上的处于从50到300微米范围内的高度处。
21.根据权利要求13所述的方法,其特征在于,所述方法还包括利用所述构件的背离衬底的表面中的另一凹部来从所述体积中去除液体,所述多孔件封闭了所述另一凹部。
22.根据权利要求13所述的方法,其特征在于,所述方法还包括通过延伸到包括所述体积的液体/气体歧管的下部中的管从所述体积中去除液体。
23.根据权利要求13所述的方法,其特征在于,所述多孔件是带孔的板。
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2018
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2019
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US5207915A (en) * | 1990-02-23 | 1993-05-04 | Minnesota Mining And Manufacturing Company | Separation method using controlled pore composite polytetrafluoroethylene article |
US20040075895A1 (en) * | 2002-10-22 | 2004-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
CN1501173A (zh) * | 2002-11-12 | 2004-06-02 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
WO2004053953A1 (ja) * | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
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