JP5952926B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents
リソグラフィ装置およびデバイス製造方法 Download PDFInfo
- Publication number
- JP5952926B2 JP5952926B2 JP2015013672A JP2015013672A JP5952926B2 JP 5952926 B2 JP5952926 B2 JP 5952926B2 JP 2015013672 A JP2015013672 A JP 2015013672A JP 2015013672 A JP2015013672 A JP 2015013672A JP 5952926 B2 JP5952926 B2 JP 5952926B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- substrate
- projection apparatus
- manifold
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Description
液体を含んでいる容積に隣接する開放端部を有するコンジット(導管)と、
コンジットの端部と容積との間の多孔性部材と、
孔性部材の両端に圧力差を生じるように配置される吸込装置と
を含む。
投影システムを用いて液体を通して基板上にパターン化した放射線のビームを投影する段階と、
容積に少なくとも一部が隣接している多孔性部材の両端に圧力差を供給することにより上記容積から液体を除去する段階とを含む。
1.ステップ・モードの場合には、マスク・テーブルMTおよび基板テーブルWTは本質的に固定されていて、一方、投影ビームに与えられた全パターンが、1回で(すなわち、1回の静的露光で)目標部分C上に投影される。基板テーブルWTは、次に、Xおよび/またはY方向に動かされ、そのため異なる目標部分Cを露光することができる。ステップ・モードの場合には、露光フィールドの最大サイズにより1回の静的露光で画像形成される目標部分Cのサイズが制限される。
を発生しない。
IL 照明システム(照明装置)
MA パターニング機器
PM 第1の位置決め装置
MT 支持構造
W 基板
PW 第2の位置決め装置
WT 基板テーブル
C 目標部分
PL 投影システム
SO 放射線源
BD ビーム供給システム
AM 調整手段
IN インテグレータ
CO コンデンサ
IH 浸漬フード
IF 位置センサ
M1,M2 マスク・アラインメント・マーク
P1,P2 基板アラインメント・マーク
10 リザーバ
12 シール部材
14 第1の出口
15 入り口
20 液体除去装置
21 有孔板
22 メニスカス
30 多孔板
31 チャンバ
32 ガス抽出リング
33 ガス供給リング
34 ガス・ナイフ
35 コーナー
36 液体軸受
37 液体供給チャンバ
38 二相抽出チャンバ
40 ドレン
41 多孔板
50 マニフォールド
50a 内部タンク
50b 外部タンク
51 二相流
52 ガス出口
53 液体除去パイプ
54 多孔板
55 入り口
56 出口
57 バッフル
60 液体供給システム
61 浸漬液源
62 定流制限器
63 可変流制限器
64 圧力調整器
65 可変流制限器
66 定流制限器
67 順方向圧力調整器
68 逆方向圧力調整器
69a,69b 圧力計
70 液体抽出チャネル
73 メニスカス
80 ガス抽出チャネル
81 毛細管
82 壁部
83 メニスカス
Claims (15)
- 投影システムを使用してパターニングデバイスから、基板テーブルに支持される基板上にパターンを投影するリソグラフィ投影装置であって、
前記投影システムと前記基板、前記基板テーブル、又は、前記基板及び前記基板テーブルの両方との間の空間に液体を供給する液体供給システムと、
前記投影システムと前記基板、前記基板テーブル、又は、前記基板及び前記基板テーブルの両方との間に配置されて前記空間に液体を閉じ込めるシール部材であって、当該シール部材の下面に多孔性部材を備え、当該多孔性部材を通じて前記空間から液体が抽出される、シール部材と、
前記シール部材からの流体の流れを受け入れるマニフォールドであって、当該マニフォールド内で液体が前記流体の流れ内のガスから分離される、マニフォールドと、
液体を収集かつ抽出するトレンチが前記基板の縁部の周囲に形成されるように前記基板を受け入れる凹部を有する前記基板テーブルと、を備えるリソグラフィ投影装置。 - 前記トレンチは、液体が下方に流れるように液体を収集かつ抽出する、請求項1に記載のリソグラフィ投影装置。
- 液体は、前記基板の縁部が前記投影システムの下に位置するときに前記トレンチから抽出される、請求項1又は2に記載のリソグラフィ投影装置。
- 前記マニフォールドは、当該マニフォールドの頂部に配置されたガス出口であって、真空ポンプを使用して前記マニフォールドからガスを除去するガス出口を備える、請求項1〜3のいずれか1項に記載のリソグラフィ投影装置。
- 前記マニフォールドは液体除去パイプを備え、前記液体除去パイプの液体開口は前記マニフォールドの底部に向いており、前記液体開口及び前記液体除去パイプは真空下で前記マニフォールドから液体を除去する、請求項1〜4のいずれか1項に記載のリソグラフィ投影装置。
- 前記液体開口は多孔板を備える、請求項5に記載のリソグラフィ投影装置。
- 前記マニフォールドはその周囲から熱的に絶縁されている、請求項1〜6のいずれか1項に記載のリソグラフィ投影装置。
- 前記マニフォールドは二重壁タンクを備える、請求項1〜7のいずれか1項に記載のリソグラフィ投影装置。
- 前記除去開口は、前記多孔性部材を通じて二相流で液体を除去する、請求項1〜8のいずれか1項に記載のリソグラフィ投影装置。
- 前記除去開口は、二相流で液体を除去するチャンバに接続されている、請求項9に記載のリソグラフィ投影装置。
- 前記除去開口は、前記パターンの経路の周囲に長方形の形状を有する、請求項1〜10のいずれか1項に記載のリソグラフィ投影装置。
- 前記シール部材は内周縁を有しており、前記内周縁は、その底部端で、画像フィールドの形状に密着している、請求項1〜11のいずれか1項に記載のリソグラフィ投影装置。
- 前記シール部材は、前記投影システムの下の前記空間に面する液体供給開口を備える、請求項1〜12のいずれか1項に記載のリソグラフィ投影装置。
- 前記空間から前記シール部材の上面上に溢れる液体を収集するオーバーフロードレンをさらに備える、請求項1〜13のいずれか1項に記載のリソグラフィ投影装置。
- 投影システムを使用して、パターニングデバイスから液体を介して基板上にパターン化したビームを投影するステップであって、前記基板は基板テーブルに支持され、前記投影システムは前記基板の上方に配置され、前記基板テーブルは、前記基板の縁部の周囲にトレンチが形成されるように前記基板を受け入れる凹部を有し、液体は、前記投影システムと前記基板、前記基板テーブル、又は、前記基板及び前記基板テーブルの両方との間の空間にある、ステップと、
液体供給システムを使用して、前記投影システムの最終要素の下方まで延びるシール部材内の前記空間に液体を供給しかつ前記空間を液体で満たすステップと、
前記空間に液体を閉じ込めるステップと、
前記シール部材の下面の除去開口内の多孔性部材を通じて前記空間から液体を除去するステップと、
前記トレンチに液体を収集し、前記トレンチから液体を抽出するステップと、
前記シール部材からの流体の流れ内のガスから液体を分離するステップと、を含むデバイス製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/921,348 US7701550B2 (en) | 2004-08-19 | 2004-08-19 | Lithographic apparatus and device manufacturing method |
US10/921,348 | 2004-08-19 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014216375A Division JP5763255B2 (ja) | 2004-08-19 | 2014-10-23 | リソグラフィ装置およびデバイス製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016097814A Division JP6259489B2 (ja) | 2004-08-19 | 2016-05-16 | リソグラフィ装置およびデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015099934A JP2015099934A (ja) | 2015-05-28 |
JP5952926B2 true JP5952926B2 (ja) | 2016-07-13 |
Family
ID=35432522
Family Applications (12)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005237216A Active JP4456044B2 (ja) | 2004-08-19 | 2005-08-18 | リソグラフィ装置およびデバイス製造方法 |
JP2009007038A Active JP4718619B2 (ja) | 2004-08-19 | 2009-01-15 | リソグラフィ装置およびデバイス製造方法 |
JP2010116393A Active JP5023187B2 (ja) | 2004-08-19 | 2010-05-20 | リソグラフィ装置 |
JP2010116426A Active JP5167307B2 (ja) | 2004-08-19 | 2010-05-20 | リソグラフィ投影装置 |
JP2011130651A Active JP5023231B2 (ja) | 2004-08-19 | 2011-06-10 | リソグラフィ装置およびデバイス製造方法 |
JP2012061783A Active JP5676508B2 (ja) | 2004-08-19 | 2012-03-19 | リソグラフィ装置およびデバイス製造方法 |
JP2013265102A Active JP5655131B2 (ja) | 2004-08-19 | 2013-12-24 | リソグラフィ装置およびデバイス製造方法 |
JP2014216375A Active JP5763255B2 (ja) | 2004-08-19 | 2014-10-23 | リソグラフィ装置およびデバイス製造方法 |
JP2015013672A Active JP5952926B2 (ja) | 2004-08-19 | 2015-01-27 | リソグラフィ装置およびデバイス製造方法 |
JP2016097814A Active JP6259489B2 (ja) | 2004-08-19 | 2016-05-16 | リソグラフィ装置およびデバイス製造方法 |
JP2017190006A Active JP6518305B2 (ja) | 2004-08-19 | 2017-09-29 | リソグラフィ装置およびデバイス製造方法 |
JP2019031673A Pending JP2019074770A (ja) | 2004-08-19 | 2019-02-25 | リソグラフィ装置およびデバイス製造方法 |
Family Applications Before (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005237216A Active JP4456044B2 (ja) | 2004-08-19 | 2005-08-18 | リソグラフィ装置およびデバイス製造方法 |
JP2009007038A Active JP4718619B2 (ja) | 2004-08-19 | 2009-01-15 | リソグラフィ装置およびデバイス製造方法 |
JP2010116393A Active JP5023187B2 (ja) | 2004-08-19 | 2010-05-20 | リソグラフィ装置 |
JP2010116426A Active JP5167307B2 (ja) | 2004-08-19 | 2010-05-20 | リソグラフィ投影装置 |
JP2011130651A Active JP5023231B2 (ja) | 2004-08-19 | 2011-06-10 | リソグラフィ装置およびデバイス製造方法 |
JP2012061783A Active JP5676508B2 (ja) | 2004-08-19 | 2012-03-19 | リソグラフィ装置およびデバイス製造方法 |
JP2013265102A Active JP5655131B2 (ja) | 2004-08-19 | 2013-12-24 | リソグラフィ装置およびデバイス製造方法 |
JP2014216375A Active JP5763255B2 (ja) | 2004-08-19 | 2014-10-23 | リソグラフィ装置およびデバイス製造方法 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016097814A Active JP6259489B2 (ja) | 2004-08-19 | 2016-05-16 | リソグラフィ装置およびデバイス製造方法 |
JP2017190006A Active JP6518305B2 (ja) | 2004-08-19 | 2017-09-29 | リソグラフィ装置およびデバイス製造方法 |
JP2019031673A Pending JP2019074770A (ja) | 2004-08-19 | 2019-02-25 | リソグラフィ装置およびデバイス製造方法 |
Country Status (8)
Country | Link |
---|---|
US (13) | US7701550B2 (ja) |
EP (4) | EP1628163B1 (ja) |
JP (12) | JP4456044B2 (ja) |
KR (3) | KR100806823B1 (ja) |
CN (1) | CN100526987C (ja) |
DE (1) | DE602005020720D1 (ja) |
SG (3) | SG120267A1 (ja) |
TW (1) | TWI308674B (ja) |
Families Citing this family (243)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
JP3977324B2 (ja) | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
SG2012087615A (en) | 2003-02-26 | 2015-08-28 | Nippon Kogaku Kk | Exposure apparatus, exposure method, and method for producing device |
KR101369016B1 (ko) * | 2003-04-10 | 2014-02-28 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
CN101813892B (zh) * | 2003-04-10 | 2013-09-25 | 株式会社尼康 | 沉浸式光刻装置及使用光刻工艺制造微器件的方法 |
TWI442694B (zh) * | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
WO2005006418A1 (ja) * | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
KR20170070264A (ko) * | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
KR101748504B1 (ko) * | 2004-01-05 | 2017-06-16 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
KR101554772B1 (ko) | 2004-02-04 | 2015-09-22 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
KR101441777B1 (ko) * | 2004-03-25 | 2014-09-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2490248A3 (en) * | 2004-04-19 | 2018-01-03 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US20070103661A1 (en) * | 2004-06-04 | 2007-05-10 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070216889A1 (en) * | 2004-06-04 | 2007-09-20 | Yasufumi Nishii | Exposure Apparatus, Exposure Method, and Method for Producing Device |
US8508713B2 (en) * | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
KR101505756B1 (ko) * | 2004-06-10 | 2015-03-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
US8717533B2 (en) * | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070139628A1 (en) * | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070222959A1 (en) * | 2004-06-10 | 2007-09-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8373843B2 (en) | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
SG10201607447RA (en) | 2004-06-10 | 2016-10-28 | Nikon Corp | Exposure equipment, exposure method and device manufacturing method |
US7481867B2 (en) * | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7522261B2 (en) * | 2004-09-24 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7379155B2 (en) | 2004-10-18 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7362412B2 (en) * | 2004-11-18 | 2008-04-22 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
US7119035B2 (en) * | 2004-11-22 | 2006-10-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method using specific contact angle for immersion lithography |
US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1681597B1 (en) * | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20160135859A (ko) | 2005-01-31 | 2016-11-28 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US8692973B2 (en) * | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4262252B2 (ja) * | 2005-03-02 | 2009-05-13 | キヤノン株式会社 | 露光装置 |
TW200644079A (en) * | 2005-03-31 | 2006-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device production method |
US20070132976A1 (en) * | 2005-03-31 | 2007-06-14 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1873816A4 (en) | 2005-04-18 | 2010-11-24 | Nikon Corp | EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENTS MANUFACTURING METHOD |
US7433016B2 (en) * | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7468779B2 (en) * | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7751026B2 (en) | 2005-08-25 | 2010-07-06 | Nikon Corporation | Apparatus and method for recovering fluid for immersion lithography |
JP4125315B2 (ja) * | 2005-10-11 | 2008-07-30 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
WO2007055373A1 (ja) * | 2005-11-14 | 2007-05-18 | Nikon Corporation | 液体回収部材、露光装置、露光方法、及びデバイス製造方法 |
US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446859B2 (en) * | 2006-01-27 | 2008-11-04 | International Business Machines Corporation | Apparatus and method for reducing contamination in immersion lithography |
US8027019B2 (en) * | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7903232B2 (en) * | 2006-04-12 | 2011-03-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9477158B2 (en) * | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7701551B2 (en) | 2006-04-14 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5151977B2 (ja) | 2006-05-10 | 2013-02-27 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
CN102298274A (zh) * | 2006-05-18 | 2011-12-28 | 株式会社尼康 | 曝光方法及装置、维护方法、以及组件制造方法 |
US8144305B2 (en) | 2006-05-18 | 2012-03-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20090023335A (ko) * | 2006-05-22 | 2009-03-04 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 |
US20070273856A1 (en) * | 2006-05-25 | 2007-11-29 | Nikon Corporation | Apparatus and methods for inhibiting immersion liquid from flowing below a substrate |
US7532309B2 (en) * | 2006-06-06 | 2009-05-12 | Nikon Corporation | Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid |
US7656502B2 (en) * | 2006-06-22 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100827507B1 (ko) * | 2006-06-22 | 2008-05-06 | 주식회사 하이닉스반도체 | 이머젼 리소그래피 장치 |
WO2008001871A1 (fr) * | 2006-06-30 | 2008-01-03 | Nikon Corporation | Procédé de maintenance, procédé d'exposition et procédé de fabrication d'appareil et de dispositif |
US20080043211A1 (en) * | 2006-08-21 | 2008-02-21 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
TWI596444B (zh) * | 2006-08-31 | 2017-08-21 | 尼康股份有限公司 | Exposure method and device, and device manufacturing method |
US7826030B2 (en) * | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8330936B2 (en) * | 2006-09-20 | 2012-12-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20080100812A1 (en) * | 2006-10-26 | 2008-05-01 | Nikon Corporation | Immersion lithography system and method having a wafer chuck made of a porous material |
JP5029870B2 (ja) * | 2006-11-13 | 2012-09-19 | 株式会社ニコン | 露光方法及び装置、液浸部材、露光装置のメンテナンス方法、並びにデバイス製造方法 |
US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US8634053B2 (en) * | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US8004651B2 (en) | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
KR100843709B1 (ko) * | 2007-02-05 | 2008-07-04 | 삼성전자주식회사 | 액체 실링 유니트 및 이를 갖는 이멀젼 포토리소그래피장치 |
US20080212050A1 (en) * | 2007-02-06 | 2008-09-04 | Nikon Corporation | Apparatus and methods for removing immersion liquid from substrates using temperature gradient |
US20080198348A1 (en) * | 2007-02-20 | 2008-08-21 | Nikon Corporation | Apparatus and methods for minimizing force variation from immersion liquid in lithography systems |
US8068209B2 (en) * | 2007-03-23 | 2011-11-29 | Nikon Corporation | Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool |
US8134685B2 (en) * | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US20080231823A1 (en) * | 2007-03-23 | 2008-09-25 | Nikon Corporation | Apparatus and methods for reducing the escape of immersion liquid from immersion lithography apparatus |
KR101373013B1 (ko) | 2007-05-14 | 2014-03-14 | 삼성전자주식회사 | 방송 서비스로의 효율적인 액세스를 위한 방송 전송 장치및 방법 및 방송 서비스 수신 장치 및 방법 |
US20090122282A1 (en) * | 2007-05-21 | 2009-05-14 | Nikon Corporation | Exposure apparatus, liquid immersion system, exposing method, and device fabricating method |
US8514365B2 (en) * | 2007-06-01 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8141566B2 (en) * | 2007-06-19 | 2012-03-27 | Lam Research Corporation | System, method and apparatus for maintaining separation of liquids in a controlled meniscus |
US7576833B2 (en) * | 2007-06-28 | 2009-08-18 | Nikon Corporation | Gas curtain type immersion lithography tool using porous material for fluid removal |
US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
US20090025753A1 (en) * | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus And Contamination Removal Or Prevention Method |
NL1035757A1 (nl) * | 2007-08-02 | 2009-02-03 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
JP4961299B2 (ja) * | 2007-08-08 | 2012-06-27 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
US7924404B2 (en) * | 2007-08-16 | 2011-04-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8681308B2 (en) * | 2007-09-13 | 2014-03-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
NL1035908A1 (nl) | 2007-09-25 | 2009-03-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
NL1036009A1 (nl) * | 2007-10-05 | 2009-04-07 | Asml Netherlands Bv | An Immersion Lithography Apparatus. |
NL1036069A1 (nl) * | 2007-10-30 | 2009-05-07 | Asml Netherlands Bv | An Immersion Lithography Apparatus. |
JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | クリーニング装置および液浸リソグラフィ装置 |
NL1036187A1 (nl) | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL1036211A1 (nl) * | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic Apparatus and Device Manufacturing Method. |
NL1036253A1 (nl) * | 2007-12-10 | 2009-06-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5369443B2 (ja) | 2008-02-05 | 2013-12-18 | 株式会社ニコン | ステージ装置、露光装置、露光方法、及びデバイス製造方法 |
JP4922322B2 (ja) * | 2008-02-14 | 2012-04-25 | エーエスエムエル ネザーランズ ビー.ブイ. | コーティング |
NL1036579A1 (nl) * | 2008-02-19 | 2009-08-20 | Asml Netherlands Bv | Lithographic apparatus and methods. |
NL1036596A1 (nl) | 2008-02-21 | 2009-08-24 | Asml Holding Nv | Re-flow and buffer system for immersion lithography. |
US8289497B2 (en) * | 2008-03-18 | 2012-10-16 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
NL1036631A1 (nl) | 2008-03-24 | 2009-09-25 | Asml Netherlands Bv | Immersion Lithographic Apparatus and Device Manufacturing Method. |
US8233139B2 (en) * | 2008-03-27 | 2012-07-31 | Nikon Corporation | Immersion system, exposure apparatus, exposing method, and device fabricating method |
NL1036715A1 (nl) | 2008-04-16 | 2009-10-19 | Asml Netherlands Bv | Lithographic apparatus. |
NL1036709A1 (nl) | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL1036766A1 (nl) * | 2008-04-25 | 2009-10-27 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus. |
NL1036835A1 (nl) * | 2008-05-08 | 2009-11-11 | Asml Netherlands Bv | Lithographic Apparatus and Method. |
EP2131241B1 (en) | 2008-05-08 | 2019-07-31 | ASML Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
EP2249205B1 (en) | 2008-05-08 | 2012-03-07 | ASML Netherlands BV | Immersion lithographic apparatus, drying device, immersion metrology apparatus and device manufacturing method |
JP5097166B2 (ja) | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置の動作方法 |
EP2131242A1 (en) * | 2008-06-02 | 2009-12-09 | ASML Netherlands B.V. | Substrate table, lithographic apparatus and device manufacturing method |
NL1036924A1 (nl) * | 2008-06-02 | 2009-12-03 | Asml Netherlands Bv | Substrate table, lithographic apparatus and device manufacturing method. |
NL2002964A1 (nl) * | 2008-06-16 | 2009-12-17 | Asml Netherlands Bv | Lithographic Apparatus, a Metrology Apparatus and a Method of Using the Apparatus. |
EP2136250A1 (en) * | 2008-06-18 | 2009-12-23 | ASML Netherlands B.V. | Lithographic apparatus and method |
NL2002983A1 (nl) * | 2008-06-26 | 2009-12-29 | Asml Netherlands Bv | A lithographic apparatus and a method of operating the lithographic apparatus. |
JP4922359B2 (ja) * | 2008-07-25 | 2012-04-25 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体ハンドリング構造、リソグラフィ装置及びデバイス製造方法 |
TW201009895A (en) * | 2008-08-11 | 2010-03-01 | Nikon Corp | Exposure apparatus, maintaining method and device fabricating method |
NL2003226A (en) * | 2008-08-19 | 2010-03-09 | Asml Netherlands Bv | Lithographic apparatus, drying device, metrology apparatus and device manufacturing method. |
NL2003392A (en) | 2008-09-17 | 2010-03-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
JP2010098172A (ja) * | 2008-10-17 | 2010-04-30 | Canon Inc | 液体回収装置、露光装置及びデバイス製造方法 |
NL2003421A (en) * | 2008-10-21 | 2010-04-22 | Asml Netherlands Bv | Lithographic apparatus and a method of removing contamination. |
US8477284B2 (en) * | 2008-10-22 | 2013-07-02 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
US8634055B2 (en) * | 2008-10-22 | 2014-01-21 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
NL2003333A (en) * | 2008-10-23 | 2010-04-26 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2003575A (en) | 2008-10-29 | 2010-05-03 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2003638A (en) | 2008-12-03 | 2010-06-07 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
US20100328637A1 (en) * | 2008-12-04 | 2010-12-30 | Nikon Corporation | Exposure apparatus, exposing method and device fabricating method |
NL2003758A (en) * | 2008-12-04 | 2010-06-07 | Asml Netherlands Bv | A member with a cleaning surface and a method of removing contamination. |
TWI438577B (zh) | 2008-12-08 | 2014-05-21 | Asml Netherlands Bv | 微影裝置及器件製造方法 |
EP2196857A3 (en) | 2008-12-09 | 2010-07-21 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
JP5001343B2 (ja) * | 2008-12-11 | 2012-08-15 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法 |
JP2010147471A (ja) * | 2008-12-18 | 2010-07-01 | Asml Netherlands Bv | リソグラフィ装置及び少なくとも2つのターゲット部分を照射する方法 |
NL2003820A (en) * | 2008-12-22 | 2010-06-23 | Asml Netherlands Bv | Fluid handling structure, table, lithographic apparatus, immersion lithographic apparatus, and device manufacturing methods. |
US8896806B2 (en) | 2008-12-29 | 2014-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
NL2004162A (en) * | 2009-02-17 | 2010-08-18 | Asml Netherlands Bv | A fluid supply system, a lithographic apparatus, a method of varying fluid flow rate and a device manufacturing method. |
EP2221669A3 (en) | 2009-02-19 | 2011-02-09 | ASML Netherlands B.V. | A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method |
NL2004305A (en) | 2009-03-13 | 2010-09-14 | Asml Netherlands Bv | Substrate table, immersion lithographic apparatus and device manufacturing method. |
JP2010251745A (ja) * | 2009-04-10 | 2010-11-04 | Asml Netherlands Bv | 液浸リソグラフィ装置及びデバイス製造方法 |
NL2004362A (en) * | 2009-04-10 | 2010-10-12 | Asml Netherlands Bv | A fluid handling device, an immersion lithographic apparatus and a device manufacturing method. |
NL2004497A (en) | 2009-05-01 | 2010-11-02 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL2004523A (en) * | 2009-05-08 | 2010-11-09 | Asml Netherlands Bv | Immersion lithographic apparatus and device manufacturing method. |
NL2004547A (en) * | 2009-05-14 | 2010-11-18 | Asml Netherlands Bv | An immersion lithographic apparatus and a device manufacturing method. |
NL2004540A (en) * | 2009-05-14 | 2010-11-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
EP2256553B1 (en) * | 2009-05-26 | 2016-05-25 | ASML Netherlands B.V. | Fluid handling structure and lithographic apparatus |
EP2264529A3 (en) | 2009-06-16 | 2011-02-09 | ASML Netherlands B.V. | A lithographic apparatus, a method of controlling the apparatus and a method of manufacturing a device using a lithographic apparatus |
EP2264528A1 (en) | 2009-06-19 | 2010-12-22 | ASML Netherlands B.V. | Sensor and lithographic apparatus |
JP5058305B2 (ja) | 2009-06-19 | 2012-10-24 | エーエスエムエル ネザーランズ ビー.ブイ. | 液浸リソグラフィ装置、液体閉じ込め構造体、液浸リソグラフィ装置用の投影システムの最終エレメント、および基板テーブル |
NL2004808A (en) * | 2009-06-30 | 2011-01-12 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2004820A (en) * | 2009-06-30 | 2011-01-04 | Asml Netherlands Bv | Lithographic apparatus and a method of measuring flow rate in a two phase flow. |
NL2004980A (en) * | 2009-07-13 | 2011-01-17 | Asml Netherlands Bv | Heat transfers assembly, lithographic apparatus and manufacturing method. |
NL2005009A (en) * | 2009-07-27 | 2011-01-31 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
JP5507392B2 (ja) | 2009-09-11 | 2014-05-28 | エーエスエムエル ネザーランズ ビー.ブイ. | シャッター部材、リソグラフィ装置及びデバイス製造方法 |
NL2005126A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2005120A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2005089A (nl) * | 2009-09-23 | 2011-03-28 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2005208A (en) * | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
NL2005207A (en) * | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
NL2005167A (en) * | 2009-10-02 | 2011-04-05 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL2005478A (en) * | 2009-11-17 | 2011-05-18 | Asml Netherlands Bv | Lithographic apparatus, removable member and device manufacturing method. |
NL2005479A (en) * | 2009-11-17 | 2011-05-18 | Asml Netherlands Bv | Lithographic apparatus, removable member and device manufacturing method. |
NL2005610A (en) | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and surface cleaning method. |
NL2005657A (en) * | 2009-12-03 | 2011-06-06 | Asml Netherlands Bv | A lithographic apparatus and a method of forming a lyophobic coating on a surface. |
US20110134400A1 (en) * | 2009-12-04 | 2011-06-09 | Nikon Corporation | Exposure apparatus, liquid immersion member, and device manufacturing method |
NL2005655A (en) | 2009-12-09 | 2011-06-14 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
NL2005717A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
NL2005666A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
NL2005874A (en) | 2010-01-22 | 2011-07-25 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
NL2005951A (en) * | 2010-02-02 | 2011-08-03 | Asml Netherlands Bv | Lithographic apparatus and a device manufacturing method. |
NL2006054A (en) | 2010-02-09 | 2011-08-10 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2005974A (en) * | 2010-02-12 | 2011-08-15 | Asml Netherlands Bv | Lithographic apparatus and a device manufacturing method. |
NL2006127A (en) * | 2010-02-17 | 2011-08-18 | Asml Netherlands Bv | A substrate table, a lithographic apparatus and a method for manufacturing a device using a lithographic apparatus. |
NL2006076A (en) * | 2010-03-04 | 2011-09-06 | Asml Netherlands Bv | A lithographic apparatus and a method of manufacturing a device using a lithographic apparatus. |
WO2011109760A2 (en) * | 2010-03-05 | 2011-09-09 | TeraDiode, Inc. | Wavelength beam combining system and method |
US20110222031A1 (en) * | 2010-03-12 | 2011-09-15 | Nikon Corporation | Liquid immersion member, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
JP5269128B2 (ja) | 2010-03-12 | 2013-08-21 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置および方法 |
NL2006243A (en) * | 2010-03-19 | 2011-09-20 | Asml Netherlands Bv | A lithographic apparatus, an illumination system, a projection system and a method of manufacturing a device using a lithographic apparatus. |
NL2006389A (en) | 2010-04-15 | 2011-10-18 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and a device manufacturing method. |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
NL2006272A (en) | 2010-05-04 | 2011-11-07 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2006648A (en) | 2010-06-01 | 2011-12-06 | Asml Netherlands Bv | A fluid supply system, a lithographic apparatus, a method of varying fluid flow rate and a device manufacturing method. |
NL2006818A (en) | 2010-07-02 | 2012-01-03 | Asml Netherlands Bv | A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus. |
US20120013863A1 (en) * | 2010-07-14 | 2012-01-19 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
US20120013864A1 (en) * | 2010-07-14 | 2012-01-19 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
US8937703B2 (en) * | 2010-07-14 | 2015-01-20 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
US20120012191A1 (en) * | 2010-07-16 | 2012-01-19 | Nikon Corporation | Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
EP2423749B1 (en) | 2010-08-24 | 2013-09-11 | ASML Netherlands BV | A lithographic apparatus and device manufacturing method |
NL2007453A (en) | 2010-10-18 | 2012-04-19 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2007477A (en) | 2010-10-22 | 2012-04-24 | Asml Netherlands Bv | Method of optimizing a lithographic process, device manufacturing method, lithographic apparatus, computer program product and simulation apparatus. |
NL2007633A (en) | 2010-11-22 | 2012-05-23 | Asml Netherlands Bv | A positioning system, a lithographic apparatus and a method for positional control. |
NL2007768A (en) | 2010-12-14 | 2012-06-18 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
EP2490073B1 (en) | 2011-02-18 | 2015-09-23 | ASML Netherlands BV | Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder |
NL2008183A (en) | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method. |
NL2008199A (en) * | 2011-02-28 | 2012-08-29 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2008250A (en) * | 2011-03-08 | 2012-09-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2008272A (en) * | 2011-03-09 | 2012-09-11 | Asml Netherlands Bv | Lithographic apparatus. |
NL2008630A (en) | 2011-04-27 | 2012-10-30 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
NL2008979A (en) | 2011-07-11 | 2013-01-14 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2008980A (en) | 2011-07-11 | 2013-01-14 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2009139A (en) | 2011-08-05 | 2013-02-06 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
JP5778093B2 (ja) | 2011-08-10 | 2015-09-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板テーブルアセンブリ、液浸リソグラフィ装置及びデバイス製造方法 |
NL2009189A (en) | 2011-08-17 | 2013-02-19 | Asml Netherlands Bv | Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method. |
SG188036A1 (en) | 2011-08-18 | 2013-03-28 | Asml Netherlands Bv | Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method |
US9256137B2 (en) * | 2011-08-25 | 2016-02-09 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
US20130050666A1 (en) * | 2011-08-26 | 2013-02-28 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
NL2009272A (en) | 2011-08-31 | 2013-03-04 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2009271A (en) | 2011-09-15 | 2013-03-18 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2009487A (en) | 2011-10-14 | 2013-04-16 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
NL2009472A (en) * | 2011-10-24 | 2013-04-25 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2009692A (en) | 2011-12-07 | 2013-06-10 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
NL2009899A (en) | 2011-12-20 | 2013-06-24 | Asml Netherlands Bv | A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method. |
NL2009858A (en) | 2011-12-27 | 2013-07-01 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, and device manufacturing method. |
CN109298602B (zh) | 2012-02-03 | 2021-10-15 | Asml荷兰有限公司 | 衬底保持器和光刻装置 |
CN102621818B (zh) * | 2012-04-10 | 2013-12-04 | 中国科学院光电技术研究所 | 一种用于光刻机的浸没控制装置 |
US20150124234A1 (en) | 2012-04-19 | 2015-05-07 | Asml Netherlands B.V. | Substrate holder, lithographic apparatus, and device manufacturing method |
US9891541B2 (en) | 2012-05-17 | 2018-02-13 | Asml Netherlands B.V. | Thermal conditioning unit, lithographic apparatus and device manufacturing method |
CN104321702B (zh) | 2012-05-22 | 2016-11-23 | Asml荷兰有限公司 | 传感器、光刻设备以及器件制造方法 |
EP2856262B1 (en) | 2012-05-29 | 2019-09-25 | ASML Netherlands B.V. | Support apparatus, lithographic apparatus and device manufacturing method |
NL2010762A (en) | 2012-05-29 | 2013-12-02 | Asml Netherlands Bv | An object holder, a lithographic apparatus and a device manufacturing method. |
CN102707580B (zh) * | 2012-05-30 | 2014-01-29 | 浙江大学 | 用于浸没式光刻机的气密封和气液分离回收装置 |
WO2013186136A2 (en) | 2012-06-11 | 2013-12-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2014029603A1 (en) | 2012-08-20 | 2014-02-27 | Asml Netherlands B.V. | Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program |
JP6074058B2 (ja) | 2012-12-20 | 2017-02-01 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびその装置で使用するためのテーブル |
CN103176368B (zh) * | 2013-03-06 | 2014-12-10 | 浙江大学 | 用于浸没式光刻机的气密封和气液减振回收装置 |
NL2010527A (en) | 2013-03-27 | 2014-09-30 | Asml Netherlands Bv | Object holder, lithographic apparatus, device manufacturing method, and method of manufacturing an object holder. |
WO2015028202A1 (en) | 2013-08-30 | 2015-03-05 | Asml Netherlands B.V. | Immersion lithographic apparatus |
CN105683839B (zh) | 2013-09-27 | 2017-08-08 | Asml荷兰有限公司 | 用于光刻设备的支撑台、光刻设备以及器件制造方法 |
WO2015106860A1 (en) | 2014-01-20 | 2015-07-23 | Asml Netherlands B.V. | Substrate holder and support table for lithography |
EP3137945B1 (en) | 2014-04-30 | 2020-05-06 | ASML Netherlands B.V. | Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method |
US10551748B2 (en) | 2014-12-19 | 2020-02-04 | Asml Netherlands B.V. | Fluid handling structure, a lithographic apparatus and a device manufacturing method |
CN113204178A (zh) * | 2016-01-13 | 2021-08-03 | Asml荷兰有限公司 | 流体处理结构及光刻设备 |
CN107561865B (zh) * | 2016-06-30 | 2019-10-25 | 上海微电子装备(集团)股份有限公司 | 一种流体抽排装置和一种浸没式光刻机 |
NL2019842A (en) * | 2016-12-14 | 2018-06-18 | Asml Netherlands Bv | A lithography apparatus and a method of manufacturing a device |
CN113508340A (zh) | 2019-03-01 | 2021-10-15 | Asml荷兰有限公司 | 包括静电夹具的物体保持器 |
CN109883995B (zh) * | 2019-03-05 | 2021-06-29 | 中国计量大学 | 基于哈特曼光线追迹的非均匀介质场的测量系统及其方法 |
CN113138538A (zh) * | 2020-01-17 | 2021-07-20 | 浙江启尔机电技术有限公司 | 一种用于浸没式光刻机的浸液供给回收装置 |
CN113138540B (zh) * | 2020-01-17 | 2024-02-09 | 浙江启尔机电技术有限公司 | 一种具有气液分离回收功能的浸液供给回收装置 |
CN113138537B (zh) * | 2020-01-17 | 2023-10-13 | 浙江大学 | 一种用于浸没式光刻机的浸液供给回收装置 |
KR20230169991A (ko) * | 2021-04-15 | 2023-12-18 | 에이에스엠엘 네델란즈 비.브이. | 유체 핸들링 시스템, 방법 및 리소그래피 장치 |
Family Cites Families (268)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE242880C (ja) | ||||
DE221563C (ja) | ||||
DE224448C (ja) | ||||
DE206607C (ja) | ||||
GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
JPS5919912Y2 (ja) | 1978-08-21 | 1984-06-08 | 清水建設株式会社 | 複合熱交換器 |
EP0023231B1 (de) | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4390273A (en) | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS57153433U (ja) | 1981-03-20 | 1982-09-27 | ||
JPS58189018A (ja) * | 1982-04-28 | 1983-11-04 | Asahi Chem Ind Co Ltd | 膜を利用した有機溶媒の分離濃縮方法 |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS58189018U (ja) | 1982-06-07 | 1983-12-15 | 株式会社神戸製鋼所 | 圧延機出側における圧延油回収装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS61113376A (ja) | 1984-11-07 | 1986-05-31 | Sony Corp | テレビジヨン信号の動き検出装置 |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS6265326U (ja) | 1985-10-16 | 1987-04-23 | ||
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
WO1987004114A1 (en) | 1985-12-30 | 1987-07-16 | Ebara Corporation | Dehydratation method and apparatus |
JPS62121417U (ja) | 1986-01-24 | 1987-08-01 | ||
US4729932A (en) | 1986-10-08 | 1988-03-08 | United Technologies Corporation | Fuel cell with integrated cooling water/static water removal means |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPS63157419U (ja) | 1987-03-31 | 1988-10-14 | ||
US5040020A (en) | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
AU617957B2 (en) | 1989-10-26 | 1991-12-05 | Mitsubishi Denki Kabushiki Kaisha | Boiling and condensing heat transfer type cooler device for power semiconductor switching elements |
US5207915A (en) * | 1990-02-23 | 1993-05-04 | Minnesota Mining And Manufacturing Company | Separation method using controlled pore composite polytetrafluoroethylene article |
US5121256A (en) | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US6104687A (en) | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
EP0951054B1 (en) | 1996-11-28 | 2008-08-13 | Nikon Corporation | Aligner and method for exposure |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10228861A (ja) | 1997-02-17 | 1998-08-25 | Hitachi Ltd | シャドウマスク検査手段を具備した露光装置 |
DE69829614T2 (de) | 1997-03-10 | 2006-03-09 | Asml Netherlands B.V. | Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
US5788477A (en) * | 1997-03-26 | 1998-08-04 | Jones; Wendyle | Gas flare |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JPH10340850A (ja) | 1997-06-05 | 1998-12-22 | Nikon Corp | 露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
AU1505699A (en) | 1997-12-12 | 1999-07-05 | Nikon Corporation | Projection exposure method and projection aligner |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
TWI242111B (en) | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
WO2001008204A1 (fr) | 1999-07-23 | 2001-02-01 | Nikon Corporation | Procede et appareil d'exposition |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
JP2001272604A (ja) | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
JP2002260999A (ja) | 2000-12-08 | 2002-09-13 | Carl-Zeiss-Stiftung Trading As Carl Zeiss | 対物レンズの少なくとも1つの内部空間を気体洗浄するシステム |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US7099896B2 (en) * | 2001-04-06 | 2006-08-29 | Patientkeeper, Inc. | Synchronizing data between disparate schemas using composite version |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
US6600547B2 (en) | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
JP2006502558A (ja) | 2001-11-07 | 2006-01-19 | アプライド マテリアルズ インコーポレイテッド | 光学式スポット格子アレイ印刷装置 |
JP3572357B2 (ja) | 2001-12-17 | 2004-09-29 | 防衛庁技術研究本部長 | ハンガ装置 |
US6686084B2 (en) * | 2002-01-04 | 2004-02-03 | Hybrid Power Generation Systems, Llc | Gas block mechanism for water removal in fuel cells |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
FR2837098B1 (fr) | 2002-03-18 | 2004-05-28 | Vincience | Composition cosmetique ou pharmaceutique comprenant des peptides, procedes de traitement et utilisations |
JP2005531672A (ja) | 2002-07-02 | 2005-10-20 | デグサ アクチエンゲゼルシャフト | 液状デュロプラスチック |
KR20050035890A (ko) | 2002-08-23 | 2005-04-19 | 가부시키가이샤 니콘 | 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법 |
US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US6988327B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101382738B (zh) | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
JP3977324B2 (ja) | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
EP1429188B1 (en) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121829A1 (en) | 2002-11-29 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
KR20130010039A (ko) | 2002-12-10 | 2013-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US6992750B2 (en) | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
SG171468A1 (en) | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
JP4595320B2 (ja) | 2002-12-10 | 2010-12-08 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
EP1571695A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE SAME |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
WO2004053950A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
JP4179283B2 (ja) | 2002-12-10 | 2008-11-12 | 株式会社ニコン | 光学素子及びその光学素子を用いた投影露光装置 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
WO2004053954A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
ATE424026T1 (de) | 2002-12-13 | 2009-03-15 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
EP1431710A3 (en) | 2002-12-19 | 2004-09-15 | ASML Holding N.V. | Liquid flow proximity sensor for use in immersion lithography |
DE60314668T2 (de) | 2002-12-19 | 2008-03-06 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
WO2004057590A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
AU2003282325A1 (en) | 2002-12-20 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Protocol-based volume visualization |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
SG2012087615A (en) | 2003-02-26 | 2015-08-28 | Nippon Kogaku Kk | Exposure apparatus, exposure method, and method for producing device |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US7105089B2 (en) * | 2003-03-13 | 2006-09-12 | 3M Innovative Properties Company | Liquid—liquid extraction system and method |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
ATE426914T1 (de) | 2003-04-07 | 2009-04-15 | Nikon Corp | Belichtungsgerat und verfahren zur herstellung einer vorrichtung |
WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
JP4488005B2 (ja) | 2003-04-10 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ装置用の液体を捕集するための流出通路 |
JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
CN101813892B (zh) | 2003-04-10 | 2013-09-25 | 株式会社尼康 | 沉浸式光刻装置及使用光刻工艺制造微器件的方法 |
KR101369016B1 (ko) | 2003-04-10 | 2014-02-28 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
EP2172809B1 (en) | 2003-04-11 | 2018-11-07 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
SG10201404132YA (en) | 2003-04-11 | 2014-09-26 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
PL1620423T3 (pl) | 2003-05-02 | 2008-07-31 | Dsm Sinochem Pharm Nl Bv | Sposób wytwarzania (4-hydroksy-6-okso-tetrahydropiran-2-ylo) acetonitrylu i jego pochodnych |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN1307456C (zh) | 2003-05-23 | 2007-03-28 | 佳能株式会社 | 投影光学系统、曝光装置及器件的制造方法 |
TWI518742B (zh) * | 2003-05-23 | 2016-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
US7274472B2 (en) | 2003-05-28 | 2007-09-25 | Timbre Technologies, Inc. | Resolution enhanced optical metrology |
US7013094B2 (en) | 2003-05-29 | 2006-03-14 | Xerox Corporation | Reload error compensation method |
TWI442694B (zh) | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
EP2738792B1 (en) * | 2003-06-13 | 2015-08-05 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4343597B2 (ja) | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP2005019616A (ja) | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1494074A1 (en) | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
EP1652003B1 (en) | 2003-07-08 | 2015-01-07 | Nikon Corporation | Wafer table for immersion lithography |
SG109000A1 (en) | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
EP2264534B1 (en) | 2003-07-28 | 2013-07-17 | Nikon Corporation | Exposure apparatus, method for producing device, and method for controlling exposure apparatus |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4378136B2 (ja) | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
JP2005159322A (ja) | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
EP1685446A2 (en) | 2003-11-05 | 2006-08-02 | DSM IP Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
WO2005054953A2 (en) | 2003-11-24 | 2005-06-16 | Carl-Zeiss Smt Ag | Holding device for an optical element in an objective |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005166197A (ja) | 2003-12-04 | 2005-06-23 | Fuji Photo Film Co Ltd | 磁気転写マスターの位置測定装置および位置決め装置 |
JP2005175016A (ja) | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
JP2005175034A (ja) | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
WO2005106589A1 (en) | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and immersion liquid therefore |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
WO2005059654A1 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objective as a microlithography projection objective with at least one liquid lens |
JP4720506B2 (ja) * | 2003-12-15 | 2011-07-13 | 株式会社ニコン | ステージ装置、露光装置、及び露光方法 |
US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4954444B2 (ja) | 2003-12-26 | 2012-06-13 | 株式会社ニコン | 流路形成部材、露光装置及びデバイス製造方法 |
JP2005191381A (ja) | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
JP2005191393A (ja) | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
KR101748504B1 (ko) * | 2004-01-05 | 2017-06-16 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
CN102169226B (zh) | 2004-01-14 | 2014-04-23 | 卡尔蔡司Smt有限责任公司 | 反射折射投影物镜 |
KR101295439B1 (ko) | 2004-01-16 | 2013-08-09 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
WO2005071491A2 (en) | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
US7697110B2 (en) | 2004-01-26 | 2010-04-13 | Nikon Corporation | Exposure apparatus and device manufacturing method |
JP2005217188A (ja) | 2004-01-29 | 2005-08-11 | Hamamatsu Photonics Kk | 半導体光検出装置及び製造方法 |
US8852850B2 (en) | 2004-02-03 | 2014-10-07 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
JP4018647B2 (ja) | 2004-02-09 | 2007-12-05 | キヤノン株式会社 | 投影露光装置およびデバイス製造方法 |
KR101115111B1 (ko) | 2004-02-13 | 2012-04-16 | 칼 짜이스 에스엠티 게엠베하 | 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈 |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
JP2005286068A (ja) | 2004-03-29 | 2005-10-13 | Canon Inc | 露光装置及び方法 |
US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
WO2005093506A1 (fr) | 2004-03-29 | 2005-10-06 | Quanta Display Inc. | Structure de pixels et son procede de fabrication |
JP4510494B2 (ja) | 2004-03-29 | 2010-07-21 | キヤノン株式会社 | 露光装置 |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7712905B2 (en) | 2004-04-08 | 2010-05-11 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR101213831B1 (ko) | 2004-05-17 | 2012-12-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8605257B2 (en) | 2004-06-04 | 2013-12-10 | Carl Zeiss Smt Gmbh | Projection system with compensation of intensity variations and compensation element therefor |
EP1774405B1 (en) | 2004-06-04 | 2014-08-06 | Carl Zeiss SMT GmbH | System for measuring the image quality of an optical imaging system |
US8705008B2 (en) | 2004-06-09 | 2014-04-22 | Nikon Corporation | Substrate holding unit, exposure apparatus having same, exposure method, method for producing device, and liquid repellant plate |
JP4543767B2 (ja) | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR101505756B1 (ko) | 2004-06-10 | 2015-03-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
US20070222959A1 (en) | 2004-06-10 | 2007-09-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
SG10201607447RA (en) | 2004-06-10 | 2016-10-28 | Nikon Corp | Exposure equipment, exposure method and device manufacturing method |
US20070139628A1 (en) | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
EP3258318B1 (en) | 2004-08-03 | 2019-02-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP4752375B2 (ja) * | 2004-08-03 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006059720A1 (ja) | 2004-12-02 | 2006-06-08 | Nikon Corporation | 露光装置、露光方法、及びデバイス製造方法 |
EP1681597B1 (en) | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4622595B2 (ja) | 2005-03-11 | 2011-02-02 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR200454568Y1 (ko) * | 2009-07-24 | 2011-07-20 | 배유라 | 다기능 가방 |
-
2004
- 2004-08-19 US US10/921,348 patent/US7701550B2/en not_active Expired - Fee Related
-
2005
- 2005-08-05 EP EP05254920A patent/EP1628163B1/en not_active Not-in-force
- 2005-08-05 EP EP07000192.0A patent/EP1783556B1/en not_active Expired - Fee Related
- 2005-08-05 EP EP10181629A patent/EP2261745B1/en not_active Not-in-force
- 2005-08-05 DE DE602005020720T patent/DE602005020720D1/de active Active
- 2005-08-05 EP EP10181627A patent/EP2261744B1/en not_active Not-in-force
- 2005-08-09 TW TW094127050A patent/TWI308674B/zh active
- 2005-08-12 SG SG200505158A patent/SG120267A1/en unknown
- 2005-08-12 SG SG200800887-2A patent/SG139771A1/en unknown
- 2005-08-12 SG SG2011048709A patent/SG173341A1/en unknown
- 2005-08-18 JP JP2005237216A patent/JP4456044B2/ja active Active
- 2005-08-18 CN CNB2005100939241A patent/CN100526987C/zh active Active
- 2005-08-19 KR KR1020050076451A patent/KR100806823B1/ko active IP Right Grant
- 2005-08-29 US US11/212,921 patent/US7602470B2/en active Active
-
2007
- 2007-06-26 KR KR1020070062952A patent/KR100830141B1/ko active IP Right Grant
- 2007-11-09 KR KR1020070114244A patent/KR100806282B1/ko active IP Right Grant
-
2009
- 2009-01-15 JP JP2009007038A patent/JP4718619B2/ja active Active
- 2009-08-14 US US12/541,755 patent/US8446563B2/en active Active
-
2010
- 2010-03-01 US US12/714,829 patent/US8031325B2/en not_active Expired - Fee Related
- 2010-05-20 JP JP2010116393A patent/JP5023187B2/ja active Active
- 2010-05-20 JP JP2010116426A patent/JP5167307B2/ja active Active
-
2011
- 2011-06-10 JP JP2011130651A patent/JP5023231B2/ja active Active
- 2011-07-19 US US13/186,123 patent/US9097992B2/en active Active
- 2011-09-01 US US13/223,952 patent/US8755028B2/en active Active
-
2012
- 2012-03-19 JP JP2012061783A patent/JP5676508B2/ja active Active
-
2013
- 2013-12-24 JP JP2013265102A patent/JP5655131B2/ja active Active
-
2014
- 2014-05-08 US US14/273,335 patent/US9488923B2/en not_active Expired - Fee Related
- 2014-10-23 JP JP2014216375A patent/JP5763255B2/ja active Active
-
2015
- 2015-01-27 JP JP2015013672A patent/JP5952926B2/ja active Active
- 2015-07-22 US US14/806,395 patent/US9507278B2/en not_active Expired - Fee Related
-
2016
- 2016-05-16 JP JP2016097814A patent/JP6259489B2/ja active Active
- 2016-10-13 US US15/293,009 patent/US9746788B2/en active Active
- 2016-10-24 US US15/333,044 patent/US9904185B2/en active Active
-
2017
- 2017-08-28 US US15/687,938 patent/US10331047B2/en not_active Expired - Fee Related
- 2017-09-29 JP JP2017190006A patent/JP6518305B2/ja active Active
-
2018
- 2018-02-26 US US15/904,946 patent/US10705439B2/en active Active
-
2019
- 2019-02-25 JP JP2019031673A patent/JP2019074770A/ja active Pending
- 2019-06-12 US US16/438,765 patent/US10599054B2/en active Active
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6259489B2 (ja) | リソグラフィ装置およびデバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150226 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150408 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151119 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160516 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160602 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160610 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5952926 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |