JP5655131B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
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- Environmental & Geological Engineering (AREA)
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- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Description
液体を含んでいる容積に隣接する開放端部を有するコンジット(導管)と、
コンジットの端部と容積との間の多孔性部材と、
孔性部材の両端に圧力差を生じるように配置される吸込装置と
を含む。
投影システムを用いて液体を通して基板上にパターン化した放射線のビームを投影する段階と、
容積に少なくとも一部が隣接している多孔性部材の両端に圧力差を供給することにより上記容積から液体を除去する段階とを含む。
1.ステップ・モードの場合には、マスク・テーブルMTおよび基板テーブルWTは本質的に固定されていて、一方、投影ビームに与えられた全パターンが、1回で(すなわち、1回の静的露光で)目標部分C上に投影される。基板テーブルWTは、次に、Xおよび/またはY方向に動かされ、そのため異なる目標部分Cを露光することができる。ステップ・モードの場合には、露光フィールドの最大サイズにより1回の静的露光で画像形成される目標部分Cのサイズが制限される。
を発生しない。
IL 照明システム(照明装置)
MA パターニング機器
PM 第1の位置決め装置
MT 支持構造
W 基板
PW 第2の位置決め装置
WT 基板テーブル
C 目標部分
PL 投影システム
SO 放射線源
BD ビーム供給システム
AM 調整手段
IN インテグレータ
CO コンデンサ
IH 浸漬フード
IF 位置センサ
M1,M2 マスク・アラインメント・マーク
P1,P2 基板アラインメント・マーク
10 リザーバ
12 シール部材
14 第1の出口
15 入り口
20 液体除去装置
21 有孔板
22 メニスカス
30 多孔板
31 チャンバ
32 ガス抽出リング
33 ガス供給リング
34 ガス・ナイフ
35 コーナー
36 液体軸受
37 液体供給チャンバ
38 二相抽出チャンバ
40 ドレン
41 多孔板
50 マニフォールド
50a 内部タンク
50b 外部タンク
51 二相流
52 ガス出口
53 液体除去パイプ
54 多孔板
55 入り口
56 出口
57 バッフル
60 液体供給システム
61 浸漬液源
62 定流制限器
63 可変流制限器
64 圧力調整器
65 可変流制限器
66 定流制限器
67 順方向圧力調整器
68 逆方向圧力調整器
69a,69b 圧力計
70 液体抽出チャネル
73 メニスカス
80 ガス抽出チャネル
81 毛細管
82 壁部
83 メニスカス
Claims (15)
- 投影システムを使用してパターニング機器から基板上にパターン付きビームを投影し、液体供給システムを使用して前記投影システムと前記基板との間の空間に液体を供給し且つ満たすリソグラフィ投影装置であって、
前記基板を保持し、基板テーブルの凹部内に配置された基板ホルダと、
前記投影システムと、前記基板の表面、前記基板テーブル、又は、前記基板の表面及び前記基板テーブルの両方との間の前記空間に前記液体を少なくとも部分的に閉じ込める閉じ込め部材と、
前記基板を向き、多孔性部材を備える除去開口であって、前記多孔性部材を通じて前記液体を除去する除去開口と、を備え、
前記凹部は、前記基板ホルダによって前記基板が保持された場合に前記基板の縁部の周囲にトレンチが設けられるように前記基板ホルダ及び前記基板よりも若干大きく形成されており、
前記トレンチは前記液体を収集且つ抽出する、リソグラフィ投影装置。 - 前記除去開口は、前記多孔性部材を通じて二相流で前記液体を除去する、請求項1に記載のリソグラフィ投影装置。
- 前記除去開口は、二相流で前記液体を除去するチャンバに接続されている、請求項2に記載のリソグラフィ投影装置。
- 前記除去開口は、前記パターン付きビームの通路の周囲に長方形の形状を有する、請求項1〜3のいずれか1項に記載のリソグラフィ投影装置。
- 前記閉じ込め部材は、前記閉じ込め部材の位置の変動を低減するように前記基板の対向面と通路を形成する面を備えており、前記除去開口は、前記通路を形成する前記面に設けられている、請求項1〜4のいずれか1項に記載のリソグラフィ投影装置。
- 前記トレンチから液体又はガスが選択的に除去される、請求項1〜5のいずれか1項に記載のリソグラフィ投影装置。
- 前記トレンチに接続され、前記トレンチを介してガスから液体を分離して抽出する液体抽出チャネルを備える、請求項1〜5のいずれか1項に記載のリソグラフィ投影装置。
- 前記液体は、前記基板の縁部が前記投影システムの下に位置する場合に前記トレンチから抽出される、請求項1〜7のいずれか1項に記載のリソグラフィ投影装置。
- 前記トレンチは、液体が下方に流れるように前記液体を収集且つ抽出する、請求項1〜8のいずれか1項に記載のリソグラフィ投影装置。
- 前記閉じ込め部材は内周縁部を有しており、前記内周縁部の下端部において前記内周縁部は画像フィールドの形状に一致する、請求項1〜9のいずれか1項に記載のリソグラフィ投影装置。
- 前記画像フィールドは長方形である、請求項10に記載のリソグラフィ投影装置。
- 前記内周縁部の上端部において、前記内周縁部は前記投影システムの形状に密着している、請求項10又は11に記載のリソグラフィ投影装置。
- 前記リソグラフィ投影装置は、前記基板テーブルと前記基板ホルダとの間の空間及び前記基板ホルダと前記基板との間の空間に作用する真空と、前記基板上の気圧とによって、前記凹部に前記基板及び前記基板ホルダを固定する、請求項1〜12のいずれか1項に記載のリソグラフィ投影装置。
- 前記基板ホルダは、主平面上に多数の小さな突起又は隆起を有する平らな板を備える、請求項1〜12のいずれか1項に記載のリソグラフィ投影装置。
- 投影システムを使用してパターニング機器から基板上にパターン付きビームを投影し、液体供給システムを使用して前記投影システムと前記基板との間の空間に液体を供給し且つ満たすリソグラフィ投影装置を稼働させる方法であって、
基板テーブルの凹部内に配置された基板ホルダ上に基板を保持する段階と、
閉じ込め部材を用いて、前記投影システムと、前記基板の表面、前記基板テーブル、又は、前記基板の表面及び前記基板テーブルの両方との間の前記空間に前記液体を閉じ込める段階と、
多孔性部材を通じて前記液体を除去する段階であって、前記多孔性部材は、前記基板を向く除去開口に設けられる、段階と、
前記基板ホルダが前記基板を保持した場合に前記基板の縁部の周囲に設けられたトレンチ内に液体を収集且つ抽出する段階であって、前記凹部は前記基板ホルダよりも若干大きく形成されている、段階と、を含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/921,348 US7701550B2 (en) | 2004-08-19 | 2004-08-19 | Lithographic apparatus and device manufacturing method |
US10/921,348 | 2004-08-19 |
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JP2012061783A Division JP5676508B2 (ja) | 2004-08-19 | 2012-03-19 | リソグラフィ装置およびデバイス製造方法 |
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JP2014057108A JP2014057108A (ja) | 2014-03-27 |
JP2014057108A5 JP2014057108A5 (ja) | 2014-10-09 |
JP5655131B2 true JP5655131B2 (ja) | 2015-01-14 |
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JP2009007038A Active JP4718619B2 (ja) | 2004-08-19 | 2009-01-15 | リソグラフィ装置およびデバイス製造方法 |
JP2010116393A Active JP5023187B2 (ja) | 2004-08-19 | 2010-05-20 | リソグラフィ装置 |
JP2010116426A Active JP5167307B2 (ja) | 2004-08-19 | 2010-05-20 | リソグラフィ投影装置 |
JP2011130651A Active JP5023231B2 (ja) | 2004-08-19 | 2011-06-10 | リソグラフィ装置およびデバイス製造方法 |
JP2012061783A Active JP5676508B2 (ja) | 2004-08-19 | 2012-03-19 | リソグラフィ装置およびデバイス製造方法 |
JP2013265102A Active JP5655131B2 (ja) | 2004-08-19 | 2013-12-24 | リソグラフィ装置およびデバイス製造方法 |
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