JP6518305B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Description
液体を含んでいる容積に隣接する開放端部を有するコンジット(導管)と、
コンジットの端部と容積との間の多孔性部材と、
孔性部材の両端に圧力差を生じるように配置される吸込装置と
を含む。
投影システムを用いて液体を通して基板上にパターン化した放射線のビームを投影する段階と、
容積に少なくとも一部が隣接している多孔性部材の両端に圧力差を供給することにより上記容積から液体を除去する段階とを含む。
1.ステップ・モードの場合には、マスク・テーブルMTおよび基板テーブルWTは本質的に固定されていて、一方、投影ビームに与えられた全パターンが、1回で(すなわち、1回の静的露光で)目標部分C上に投影される。基板テーブルWTは、次に、Xおよび/またはY方向に動かされ、そのため異なる目標部分Cを露光することができる。ステップ・モードの場合には、露光フィールドの最大サイズにより1回の静的露光で画像形成される目標部分Cのサイズが制限される。
を発生しない。
IL 照明システム(照明装置)
MA パターニング機器
PM 第1の位置決め装置
MT 支持構造
W 基板
PW 第2の位置決め装置
WT 基板テーブル
C 目標部分
PL 投影システム
SO 放射線源
BD ビーム供給システム
AM 調整手段
IN インテグレータ
CO コンデンサ
IH 浸漬フード
IF 位置センサ
M1,M2 マスク・アラインメント・マーク
P1,P2 基板アラインメント・マーク
10 リザーバ
12 シール部材
14 第1の出口
15 入り口
20 液体除去装置
21 有孔板
22 メニスカス
30 多孔板
31 チャンバ
32 ガス抽出リング
33 ガス供給リング
34 ガス・ナイフ
35 コーナー
36 液体軸受
37 液体供給チャンバ
38 二相抽出チャンバ
40 ドレン
41 多孔板
50 マニフォールド
50a 内部タンク
50b 外部タンク
51 二相流
52 ガス出口
53 液体除去パイプ
54 多孔板
55 入り口
56 出口
57 バッフル
60 液体供給システム
61 浸漬液源
62 定流制限器
63 可変流制限器
64 圧力調整器
65 可変流制限器
66 定流制限器
67 順方向圧力調整器
68 逆方向圧力調整器
69a,69b 圧力計
70 液体抽出チャネル
73 メニスカス
80 ガス抽出チャネル
81 毛細管
82 壁部
83 メニスカス
Claims (14)
- 放射線感光基板上に放射ビームを投影するように構成された投影システムであって、最終光学素子を備え、底面を有する投影システムと、
前記最終光学素子と可動テーブルとの間の空間に少なくとも部分的に液体を閉じ込めるための部材であって、前記部材の少なくとも一部が前記底面の下に延在し、前記部材は、前記可動テーブルに面する回収開口を備え、前記回収開口は、液体を回収するように構成された多孔性構造を備える、部材と、
前記空間に関して前記回収開口の外側の抽出出口であって、前記回収開口を越えて流出する流体を排出するように構成された抽出出口と、を備えるリソグラフィ投影装置。 - 前記空間に関して前記抽出出口の外側の入口であって、ガスを供給するように構成された入口をさらに備える、請求項1に記載のリソグラフィ投影装置。
- 前記部材は、前記最終光学素子に対して前記放射ビームの光軸の方向に移動可能である、請求項1又は2に記載のリソグラフィ投影装置。
- 放射線感光基板上に放射ビームを投影するように構成された投影システムであって、最終光学素子を備え、底面を有する投影システムと、
前記最終光学素子と可動テーブルとの間の空間に少なくとも部分的に液体を閉じ込めるための部材であって、前記部材の少なくとも一部が前記底面の下に延在し、前記部材は、前記可動テーブルに面する回収開口を備え、前記回収開口は、液体を回収するように構成された多孔性構造を備える、部材と、
前記空間に関して前記回収開口の外側の入口であって、前記回収開口を越えて流出する液体にガスを提供するように構成された入口と、を備えるリソグラフィ投影装置。 - 前記多孔性構造を通じて回収された流体を受け取るように構成され、かつ、回収された前記流体中のガスから液体を分離するように構成されたマニフォールドであって、さらなる多孔性構造を備えるマニフォールドをさらに備える、請求項1〜4のいずれか1項に記載のリソグラフィ投影装置。
- 前記部材の前記少なくとも一部は、そこを通ってパターンが投影されることが可能なアパーチャを規定し、前記アパーチャは複数の辺を有する、請求項1〜5のいずれか1項に記載のリソグラフィ投影装置。
- 前記多孔性構造は、
液体を回収するように構成された第1部分であって、前記可動テーブルの上面に本質的に平行な表面を有する第1部分と、
液体を回収するように構成された第2部分であって、前記可動テーブルの前記上面に面する表面を有し、前記第2部分の少なくとも一部は、前記第1部分の表面よりも前記可動テーブルからさらに遠くにある、第2部分と、を備える、請求項1〜6のいずれか1項に記載のリソグラフィ投影装置。 - 放射性感光基板上に放射ビームを投影するように構成された投影システムと、
前記投影システムと可動テーブルとの間の空間に少なくとも部分的に液体を閉じ込めるための部材であって、前記部材は、前記可動テーブルに面する回収開口を備え、前記回収開口は、流体を回収するように構成された第1多孔性構造を備える、部材と、
前記第1多孔性構造から、回収された流体を受け取るように構成された第2多孔性構造であって、回収された前記流体中のガスから液体を別個に排出するように構成された第2多孔性構造と、を備えるリソグラフィ投影装置。 - 回収された前記流体のガスを排出するように構成された出口をさらに備え、前記出口は前記第2多孔性構造の上方に配置される、請求項8に記載のリソグラフィ投影装置。
- 回収された前記流体は、前記出口の下方の位置でキャビティ内に受け取られる、請求項9に記載のリソグラフィ投影装置。
- 前記第2多孔性構造は、キャビティ内に突出する構造内に又は構造上に配置される、請求項8又は9に記載のリソグラフィ投影装置。
- 前記第2多孔性構造は、実質的に液体のみを除去するように構成される、請求項8〜11のいずれか1項に記載のリソグラフィ投影装置。
- 前記部材の一部は、前記投影システムの底面と前記可動テーブルとの間に配置され、かつ、前記底面の下に配置され、前記一部は、そこを通って前記放射ビームが投影されることが可能なアパーチャを規定し、前記アパーチャは複数の辺を有する、請求項8〜12のいずれか1項に記載のリソグラフィ投影装置。
- 前記多孔性構造は、前記空間内で、前記放射ビームの通路の周囲に延在する形状を有し、前記形状は、前記経路の周囲に配置された複数の辺を備える、請求項1〜13のいずれか1項に記載のリソグラフィ投影装置。
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US10/921,348 | 2004-08-19 | ||
US10/921,348 US7701550B2 (en) | 2004-08-19 | 2004-08-19 | Lithographic apparatus and device manufacturing method |
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JP2005237216A Active JP4456044B2 (ja) | 2004-08-19 | 2005-08-18 | リソグラフィ装置およびデバイス製造方法 |
JP2009007038A Active JP4718619B2 (ja) | 2004-08-19 | 2009-01-15 | リソグラフィ装置およびデバイス製造方法 |
JP2010116426A Active JP5167307B2 (ja) | 2004-08-19 | 2010-05-20 | リソグラフィ投影装置 |
JP2010116393A Active JP5023187B2 (ja) | 2004-08-19 | 2010-05-20 | リソグラフィ装置 |
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