RU2014121727A - Печатная плата и способ ее получения - Google Patents
Печатная плата и способ ее получения Download PDFInfo
- Publication number
- RU2014121727A RU2014121727A RU2014121727/07A RU2014121727A RU2014121727A RU 2014121727 A RU2014121727 A RU 2014121727A RU 2014121727/07 A RU2014121727/07 A RU 2014121727/07A RU 2014121727 A RU2014121727 A RU 2014121727A RU 2014121727 A RU2014121727 A RU 2014121727A
- Authority
- RU
- Russia
- Prior art keywords
- coating
- substrate
- circuit board
- printed circuit
- wire connection
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims 16
- 239000011248 coating agent Substances 0.000 claims abstract 52
- 238000000576 coating method Methods 0.000 claims abstract 52
- 239000000758 substrate Substances 0.000 claims abstract 30
- 229920000642 polymer Polymers 0.000 claims abstract 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract 6
- 150000008282 halocarbons Chemical class 0.000 claims abstract 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052802 copper Inorganic materials 0.000 claims abstract 3
- 239000010949 copper Substances 0.000 claims abstract 3
- 229920002313 fluoropolymer Polymers 0.000 claims abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052737 gold Inorganic materials 0.000 claims abstract 3
- 239000010931 gold Substances 0.000 claims abstract 3
- 239000011810 insulating material Substances 0.000 claims abstract 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract 3
- 229910052709 silver Inorganic materials 0.000 claims abstract 3
- 239000004332 silver Substances 0.000 claims abstract 3
- 229910000679 solder Inorganic materials 0.000 claims 7
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 239000011247 coating layer Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 238000005476 soldering Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 2
- 210000004907 gland Anatomy 0.000 claims 2
- 239000010410 layer Substances 0.000 claims 2
- 229910001507 metal halide Inorganic materials 0.000 claims 2
- 150000005309 metal halides Chemical class 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 230000001376 precipitating effect Effects 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
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- H01H13/78—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard characterised by the contacts or the contact sites
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- H01L2924/1901—Structure
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- H01L2924/19043—Component type being a resistor
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- H01L2924/3011—Impedance
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
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- H05K2201/015—Fluoropolymer, e.g. polytetrafluoroethylene [PTFE]
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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- H05K2203/049—Wire bonding
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
- H05K2203/1322—Encapsulation comprising more than one layer
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/222—Completing of printed circuits by adding non-printed jumper connections
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Laminated Bodies (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
1. Печатная плата, включающая:подложку, включающую изоляционный материал;множество электропроводных печатных дорожек, присоединенных по меньшей мере к одной поверхности подложки;покрытие, осажденное по меньшей мере на одну поверхность подложки, причем:покрытие покрывает по меньшей мере часть множества электропроводных печатных дорожек; ивключает по меньшей мере один галогенуглеводородный полимер; ипо меньшей мере один электропроводный провод, который соединен проводным соединением по меньшей мере с одной электропроводной печатной дорожкой, причем проводное соединение формируют через покрытие без предварительного удаления покрытия так, что проводное соединение примыкает к покрытию.2. Печатная плата по п. 1, в которой проводное соединение примыкает к покрытию вдоль плоскости, параллельной по меньшей мере одной поверхности подложки.3. Печатная плата по п. 1, в которой проводное соединение представляет собой по меньшей мере одно из:шарикового термокомпрессионного микросварного соединения; иклинового термокомпрессионного микросварного соединения.4. Печатная плата по п. 1, в которой провод включает по меньшей мере одно из:золота;алюминия;серебра;меди;никеля; ижелеза.5. Печатная плата по п. 1, в которой по меньшей мере часть провода покрыта покрытием.6. Печатная плата по п. 1, в которой покрытие имеет толщину от 1 нанометра до 2 микрометров.7. Печатная плата по п. 1, в которой покрытие имеет толщину от 10 нанометров до 100 нанометров.8. Печатная плата по п. 1, в которой по меньшей мере один галогенуглеводородный полимер представляет собой фторуглеводородный полимер.9. Печатная плата по п. 1, в которой проводное соединение с�
Claims (29)
1. Печатная плата, включающая:
подложку, включающую изоляционный материал;
множество электропроводных печатных дорожек, присоединенных по меньшей мере к одной поверхности подложки;
покрытие, осажденное по меньшей мере на одну поверхность подложки, причем:
покрытие покрывает по меньшей мере часть множества электропроводных печатных дорожек; и
включает по меньшей мере один галогенуглеводородный полимер; и
по меньшей мере один электропроводный провод, который соединен проводным соединением по меньшей мере с одной электропроводной печатной дорожкой, причем проводное соединение формируют через покрытие без предварительного удаления покрытия так, что проводное соединение примыкает к покрытию.
2. Печатная плата по п. 1, в которой проводное соединение примыкает к покрытию вдоль плоскости, параллельной по меньшей мере одной поверхности подложки.
3. Печатная плата по п. 1, в которой проводное соединение представляет собой по меньшей мере одно из:
шарикового термокомпрессионного микросварного соединения; и
клинового термокомпрессионного микросварного соединения.
4. Печатная плата по п. 1, в которой провод включает по меньшей мере одно из:
золота;
алюминия;
серебра;
меди;
никеля; и
железа.
5. Печатная плата по п. 1, в которой по меньшей мере часть провода покрыта покрытием.
6. Печатная плата по п. 1, в которой покрытие имеет толщину от 1 нанометра до 2 микрометров.
7. Печатная плата по п. 1, в которой покрытие имеет толщину от 10 нанометров до 100 нанометров.
8. Печатная плата по п. 1, в которой по меньшей мере один галогенуглеводородный полимер представляет собой фторуглеводородный полимер.
9. Печатная плата по п. 1, в которой проводное соединение сформировано в отдельной области подложки, причем формирование проводного соединения изменяет покрытие в отдельной области без изменения покрытия в других областях подложки.
10. Печатная плата по п. 9, в которой:
покрытие не удалено с отдельной области подложки перед формированием проводного соединения; и
формирование проводного соединения изменяет покрытие в отдельной области подложки в результате избирательного удаления покрытия с отдельной области подложки.
11. Печатная плата по п. 1, дополнительно включающая по меньшей мере один электрический компонент, соединенный паяным соединением по меньшей мере с одной электропроводной печатной дорожкой, причем паяное соединение припаяно через покрытие так, что паяное соединение примыкает к покрытию.
12. Печатная плата по п. 1, в которой проводное соединение сформировано в первой области подложки, причем первая область покрыта покрытием, и дополнительно включает:
по меньшей мере один электрический компонент, соединенный паяным соединением по меньшей мере с одной электропроводной печатной дорожкой во второй области подложки, причем вторая область покрыта другим покрытием.
13. Печатная плата по п. 1, в которой покрытие осаждают так, что слой галогенида металла покрывает по меньшей мере часть многочисленных электропроводных печатных дорожек.
14. Печатная плата по п. 1, в которой покрытие осаждают так, что слой галогенида металла по существу отсутствует между многочисленными электропроводными печатными дорожками и покрытием.
15. Способ получения печатной платы, включающий этапы, на которых:
присоединяют множество электропроводных печатных дорожек по меньшей мере к одной поверхности подложки, включающей изоляционный материал;
осаждают покрытие по меньшей мере на одну поверхность подложки, причем покрытие покрывает по меньшей мере часть множества электропроводных печатных дорожек, причем покрытие включает по меньшей мере один галогенуглеводородный полимер; и
формируют проводное соединение между по меньшей мере одним электропроводным проводом и по меньшей мере одной электропроводной печатной дорожкой, причем проводное соединение
формируют через покрытие без предварительного удаления покрытия так, что проводное соединение примыкает к покрытию.
16. Способ по п. 15, в котором проводное соединение примыкает к покрытию вдоль плоскости, параллельной по меньшей мере одной поверхности подложки.
17. Способ по п. 15, в котором проводное соединение представляет собой по меньшей мере одно из:
шарикового термокомпрессионного микросварного соединения; и
клинового термокомпрессионного микросварного соединения.
18. Способ по п. 15, в котором провод включает по меньшей мере одно из:
золота;
алюминия;
серебра;
меди;
никеля; и
железа.
19. Способ по п. 15, в котором по меньшей мере часть провода покрывают покрытием перед формированием проводного соединения.
20. Способ по п. 15, в котором покрытие имеет толщину от 1 нанометра до 2 микрометров.
21. Способ по п. 15, в котором покрытие имеет толщину от 10 нанометров до 100 нанометров.
22. Способ по п. 15, в котором по меньшей мере один галогенуглеводородный полимер представляет собой фторуглеводородный полимер.
23. Способ по п. 15, в котором проводное соединение формируют в отдельной области подложки, причем формирование проводного соединения изменяет покрытие в отдельной области без изменения покрытия в других областях подложки.
24. Способ по п. 23, в котором:
покрытие не удаляют с отдельной области подложки перед формированием проводного соединения; и
формирование проводного соединения изменяет покрытие в отдельной области подложки избирательным удалением покрытия с отдельной области подложки.
25. Способ по п. 15, дополнительно включающий этап, на котором:
после осаждения покрытия проводят пайку через покрытие с образованием паяного соединения между электрическим компонентом и по меньшей мере одной электропроводной печатной дорожкой, присоединенной к подложке, причем паяное соединение примыкает к покрытию.
26. Способ по п. 15, в котором проводное соединение формируют по меньшей мере в первой области подложки, причем первую область покрывают покрытием, и дополнительной включающий этапы, на которых:
осаждают другое покрытие во второй области подложки; и
проводят пайку через другое покрытие во второй области подложки для формирования паяного соединения между электрическим компонентом и по меньшей мере одной электропроводной печатной дорожкой, присоединенной к подложке.
27. Способ по п. 15, в котором осаждение покрытия включает осаждение первого слоя покрытия, и дополнительно включающий
этап, на котором после формирования проводного соединения осаждают второй слой покрытия по меньшей мере на одну поверхность подложки, причем второй слой покрытия покрывает по меньшей мере часть проводного соединения.
28. Способ по п. 15, в котором проводное соединение представляет собой проводное соединение бескорпусного кристалла.
29. Способ по п. 15, в котором подложка включена в печатную плату, и дополнительно включающий этап, на котором:
после формирования проводного соединения на печатную плату осаждают конформное покрытие, причем конформное покрытие включает по меньшей мере один галогенуглеводородный полимер, причем конформное покрытие имеет по меньшей мере одно из следующих свойств:
способность к пайке через покрытие;
способность обеспечивать проведение проводного монтажа через конформное покрытие.
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GB0815095A GB2462823A (en) | 2008-08-18 | 2008-08-18 | A switch |
GB0815094A GB2462822B (en) | 2008-08-18 | 2008-08-18 | Wire bonding |
GB0815096.3 | 2008-08-18 | ||
GB0815096A GB2462824A (en) | 2008-08-18 | 2008-08-18 | Printed circuit board encapsulation |
GB0815094.8 | 2008-08-18 | ||
GB0815095.5 | 2008-08-18 |
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RU2014121727A RU2685692C2 (ru) | 2008-08-18 | 2014-05-28 | Печатная плата и способ ее получения |
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RU2011110260/07A RU2533162C2 (ru) | 2008-08-18 | 2009-08-11 | Галогенуглеводородное полимерное покрытие |
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CN (3) | CN102150480A (ru) |
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MY (1) | MY155804A (ru) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2741623C1 (ru) * | 2019-10-03 | 2021-01-28 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Способ формирования защитного покрытия на поверхности бескорпусных элементов |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0703172D0 (en) | 2007-02-19 | 2007-03-28 | Pa Knowledge Ltd | Printed circuit boards |
US10008637B2 (en) | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
WO2010020753A2 (en) | 2008-08-18 | 2010-02-25 | Semblant Limited | Halo-hydrocarbon polymer coating |
GB201003067D0 (en) * | 2010-02-23 | 2010-04-07 | Semblant Ltd | Plasma-polymerized polymer coating |
GB201203927D0 (en) * | 2012-03-06 | 2012-04-18 | Semblant Ltd | Coated electrical assembly |
US8995146B2 (en) | 2010-02-23 | 2015-03-31 | Semblant Limited | Electrical assembly and method |
US9204553B2 (en) | 2010-03-23 | 2015-12-01 | Lear Corporation | Method for producing a printed circuit board |
GB2485419B (en) * | 2010-11-15 | 2015-02-25 | Semblant Ltd | Method for reducing creep corrosion |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
US10211380B2 (en) | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
CN103782402B (zh) | 2011-07-21 | 2017-12-01 | 克利公司 | 用于改进的化学抗性的发光体器件封装、部件和方法、以及相关方法 |
KR101175909B1 (ko) * | 2011-07-27 | 2012-08-22 | 삼성전기주식회사 | 인쇄회로기판의 표면처리 방법 및 인쇄회로기판 |
ITRM20110461A1 (it) * | 2011-09-07 | 2013-03-08 | Pielleitalia S R L | "materiale composito comprendente uno strato di materiale piezoelettrico polimerico accoppiato con un substrato tessile e procedimento per realizzare detto materiale composito" |
EP2786429A4 (en) * | 2011-12-01 | 2015-07-29 | Cree Inc | LIGHT EMITTING DEVICES AND COMPONENTS HAVING ENHANCED CHEMICAL RESISTANCE AND RELATED METHODS |
US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
AU2013208273B2 (en) | 2012-01-10 | 2015-11-26 | Hzo, Inc. | Methods, apparatuses and systems for monitoring for exposure of electronic devices to moisture and reacting to exposure of electronic devices to moisture |
JP5693515B2 (ja) | 2012-01-10 | 2015-04-01 | エイチズィーオー・インコーポレーテッド | 内部耐水性被覆を備える電子デバイス |
US9146207B2 (en) | 2012-01-10 | 2015-09-29 | Hzo, Inc. | Methods, apparatuses and systems for sensing exposure of electronic devices to moisture |
JP2013143563A (ja) * | 2012-01-10 | 2013-07-22 | Hzo Inc | 内部耐水性被覆を備える電子デバイスを組み立てるためのシステム |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
CN107262347A (zh) * | 2012-03-06 | 2017-10-20 | 赛姆布兰特有限公司 | 涂覆的电气组件 |
CN104334287A (zh) | 2012-03-23 | 2015-02-04 | Hzo股份有限公司 | 用于将保护覆层施加至电子装置组件的设备、系统以及方法 |
JP2013201742A (ja) * | 2012-03-23 | 2013-10-03 | Hzo Inc | ポートレス電子装置 |
EP2780935A4 (en) | 2013-01-08 | 2015-11-11 | Hzo Inc | REMOVAL OF SELECTED PARTS FROM SUBSTRATE PROTECTIVE COATINGS |
US9894776B2 (en) | 2013-01-08 | 2018-02-13 | Hzo, Inc. | System for refurbishing or remanufacturing an electronic device |
US10449568B2 (en) | 2013-01-08 | 2019-10-22 | Hzo, Inc. | Masking substrates for application of protective coatings |
DE102013207721A1 (de) * | 2013-04-26 | 2014-10-30 | Infineon Technologies Ag | Bondverbindung und Bondverfahren |
EP2860319A1 (de) * | 2013-10-11 | 2015-04-15 | Daw Se | Wärmedämmverbund und Wärmedämmverbundareal sowie Wandaufbau, umfassend den Wärmedämmverbund oder das Wärmedämmverbundareal, und verfahren zur herstellung von Wandaufbauten |
US9776911B2 (en) | 2013-10-28 | 2017-10-03 | Ferro Corporation | Dielectric pastes for aluminum substrates |
DE102014213944A1 (de) * | 2014-07-17 | 2016-01-21 | Siemens Aktiengesellschaft | Elektrische Schaltvorrichtung für Mittel- und/oder Hochspannungsanwendungen |
CN104320920B (zh) * | 2014-10-13 | 2017-05-10 | 北京卫星制造厂 | 一种基于低内应力的电子产品涂覆方法 |
US9633930B2 (en) * | 2014-11-26 | 2017-04-25 | Kookmin University Industry Academy Cooperation Foundation | Method of forming through-hole in silicon substrate, method of forming electrical connection element penetrating silicon substrate and semiconductor device manufactured thereby |
KR20170016047A (ko) * | 2015-08-03 | 2017-02-13 | 에스케이하이닉스 주식회사 | 플래나 스택된 반도체칩들을 포함하는 반도체 패키지 |
JP6583669B2 (ja) * | 2015-08-03 | 2019-10-02 | パナソニックIpマネジメント株式会社 | Ledモジュール |
WO2017051019A1 (en) * | 2015-09-24 | 2017-03-30 | Europlasma Nv | Polymer coatings and methods for depositing polymer coatings |
DE102015221196B4 (de) * | 2015-10-29 | 2019-09-19 | Schott Ag | Verfahren zur Herstellung eines Bauteiles, Bauteil und Drucksensor |
US9893027B2 (en) * | 2016-04-07 | 2018-02-13 | Nxp Usa, Inc. | Pre-plated substrate for die attachment |
US20170358445A1 (en) | 2016-06-13 | 2017-12-14 | Gvd Corporation | Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles |
US11679412B2 (en) | 2016-06-13 | 2023-06-20 | Gvd Corporation | Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles |
CN106132086A (zh) * | 2016-07-08 | 2016-11-16 | 广东小天才科技有限公司 | 一种电路板结构及电子元件焊接方法 |
GB201621177D0 (en) | 2016-12-13 | 2017-01-25 | Semblant Ltd | Protective coating |
JP2018129409A (ja) * | 2017-02-09 | 2018-08-16 | 国立研究開発法人産業技術総合研究所 | 基材背面レーザ光照射による金属粉末低温融解に基くパターン配線回路形成方法とその形成された構造物 |
US10770238B2 (en) | 2017-07-03 | 2020-09-08 | Avx Corporation | Solid electrolytic capacitor assembly with hydrophobic coatings |
US11257628B2 (en) | 2017-07-03 | 2022-02-22 | KYOCERA AVX Components Corporation | Solid electrolytic capacitor containing a nanocoating |
CN107457475A (zh) * | 2017-07-24 | 2017-12-12 | 南昌大学 | 金属表面耐磨涂层的涂覆装置及方法 |
CN109385174B (zh) | 2017-08-10 | 2021-04-27 | 财团法人工业技术研究院 | 底漆组成物与使用该底漆组成物的铜箔基板 |
US10172244B1 (en) | 2018-05-09 | 2019-01-01 | International Business Machines Corporation | Construction of printed circuit board having a buried via |
JP6490866B1 (ja) * | 2018-11-09 | 2019-03-27 | 株式会社インテリジェンス・ワークス | フレキシブルセンサコネクタ、及びセンサシステム |
CN110972405B (zh) * | 2019-11-29 | 2021-04-09 | 苏州热工研究院有限公司 | 一种核电厂核级电路板银离子电迁移的防止方法和装置 |
US11439024B2 (en) * | 2020-07-16 | 2022-09-06 | Steering Solutions Ip Holding Corporation | Method for manufacturing water resistant printed circuit board |
RU201058U1 (ru) * | 2020-08-05 | 2020-11-25 | Общество с ограниченной ответственностью "АЕДОН" | Печатная плата с электронным компонентом |
RU2751605C1 (ru) * | 2020-09-04 | 2021-07-15 | Александр Владимирович Подувальцев | Способ монтажа проволочных проводников к контактным площадкам полупроводниковых приборов |
WO2022093072A1 (ru) * | 2020-10-27 | 2022-05-05 | Акционерное Общество "Модуль-Воронеж" | Активная ушная бирка для животных |
CN113573493B (zh) * | 2021-07-20 | 2022-08-12 | 荣耀终端有限公司 | 一种电路板、电子设备以及电路板的生产方法 |
US20230326820A1 (en) * | 2022-04-07 | 2023-10-12 | Infineon Technologies Ag | Anti-Corrosion Particles in Semiconductor Device |
CN116900557A (zh) * | 2023-08-30 | 2023-10-20 | 亿铖达科技(江西)有限公司 | 一种微波复合加热用纳米锡银铜焊膏及其制备方法和焊接方法 |
CN118507368A (zh) * | 2024-07-18 | 2024-08-16 | 芯联集成电路制造股份有限公司 | 一种半导体器件及其制备方法 |
Family Cites Families (141)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US391453A (en) * | 1888-10-23 | collins | ||
US3770571A (en) | 1969-04-02 | 1973-11-06 | Richardson Co | Fabrication of printed circuit boards |
FR2048044B1 (ru) | 1969-06-30 | 1973-01-12 | Fmc Corp | |
US3649475A (en) | 1969-07-22 | 1972-03-14 | Gen Dynamics Corp | Multi-layer printed circuit boards and methods of making same |
US3737339A (en) * | 1970-12-18 | 1973-06-05 | Richardson Co | Fabrication of printed circuit boards |
US3745536A (en) * | 1971-03-01 | 1973-07-10 | Burroughs Corp | High speed serial scan and read-out of keyboards |
GB1399252A (en) | 1971-05-19 | 1975-07-02 | Post Office | Electrical signal initiating keyboards |
US3931454A (en) * | 1972-10-17 | 1976-01-06 | Westinghouse Electric Corporation | Printed circuit board and method of preparing it |
JPS5219875B2 (ru) | 1974-02-07 | 1977-05-31 | ||
US3931453A (en) * | 1974-08-23 | 1976-01-06 | Walker, Hall, Sears, Inc. | Geophone case with improved cable anchor |
US4136225A (en) | 1977-07-08 | 1979-01-23 | Bell Telephone Laboratories, Incorporated | Cover coatings for printed circuits |
JPS5439873A (en) | 1977-09-06 | 1979-03-27 | Nippon Denso Co | Incombustible ypet flexible printed wiring board |
US4268568A (en) * | 1979-05-14 | 1981-05-19 | Bell Telephone Laboratories, Incorporated | Lubricated electrical contacts |
US4508756A (en) | 1980-10-08 | 1985-04-02 | Murata Manufacturing Co., Ltd. | Method for inhibiting oxidation of a copper film on ceramic body |
US4369287A (en) | 1981-03-16 | 1983-01-18 | Motorola Inc. | Permanent fluxing agent and solder-through conformal coating |
JPS5997029A (ja) | 1982-11-26 | 1984-06-04 | Hitachi Ltd | 絶対圧形半導体圧力センサ |
US4689110A (en) | 1983-12-22 | 1987-08-25 | Trw Inc. | Method of fabricating multilayer printed circuit board structure |
US4591659A (en) | 1983-12-22 | 1986-05-27 | Trw Inc. | Multilayer printed circuit board structure |
JPS60214941A (ja) | 1984-04-10 | 1985-10-28 | 株式会社 潤工社 | プリント基板 |
JPS60214942A (ja) | 1984-04-10 | 1985-10-28 | 株式会社 潤工社 | 圧縮変形しにくい延伸多孔質四弗化エチレン樹脂体 |
JPS60257592A (ja) | 1984-06-04 | 1985-12-19 | 松下電工株式会社 | 多層プリント配線板 |
JPS60258232A (ja) | 1984-06-04 | 1985-12-20 | Matsushita Electric Works Ltd | フツ素系樹脂積層板 |
JPS61213221A (ja) * | 1985-03-19 | 1986-09-22 | Japan Synthetic Rubber Co Ltd | プラズマ重合膜の製法 |
US4710429A (en) | 1985-04-15 | 1987-12-01 | The Dow Chemical Company | Laminates from epoxidized phenol-hydrocarbon adducts |
JPS61243844A (ja) | 1985-04-23 | 1986-10-30 | Hitachi Ltd | 熱硬化性樹脂組成物 |
JPS62252016A (ja) | 1986-04-24 | 1987-11-02 | 富士ポリマテック株式会社 | 接点ゴム導通部の形成法 |
CA1312040C (en) | 1985-12-19 | 1992-12-29 | Joseph Victor Koleske | Conformal coatings cured with actinic radiation |
US4732649A (en) | 1986-06-18 | 1988-03-22 | Macdermid, Incorporated | Method for manufacture of printed circuit boards |
US4784901A (en) | 1987-04-13 | 1988-11-15 | Japan Gore-Tex, Inc. | Flexible printed circuit board base material |
US4772509A (en) | 1987-04-13 | 1988-09-20 | Japan Gore-Tex, Inc. | Printed circuit board base material |
US4755911A (en) | 1987-04-28 | 1988-07-05 | Junkosha Co., Ltd. | Multilayer printed circuit board |
US4797178A (en) | 1987-05-13 | 1989-01-10 | International Business Machines Corporation | Plasma etch enhancement with large mass inert gas |
JPH0180974U (ru) | 1987-11-20 | 1989-05-30 | ||
US6238774B1 (en) | 1988-02-04 | 2001-05-29 | Fujitsu Limited | Protection of oxide superconductor |
JPH01225539A (ja) | 1988-03-04 | 1989-09-08 | Junkosha Co Ltd | 積層板 |
US4975319A (en) | 1988-07-14 | 1990-12-04 | General Electric Company | Printed circuit board from fibers impregnated with epoxy resin mixture, halogenated bisphenol and polyphenylene ether |
EP0355955A3 (en) | 1988-07-25 | 1991-12-27 | Hitachi, Ltd. | Connection for semiconductor devices or integrated circuits by coated wires and method of manufacturing the same |
JPH02120351A (ja) | 1988-10-29 | 1990-05-08 | Japan Synthetic Rubber Co Ltd | 難燃性樹脂組成物 |
DE3912580C2 (de) | 1989-04-17 | 1997-08-21 | F&K Delvotec Bondtechnik Gmbh | Bondstempel |
US5141702A (en) | 1990-03-13 | 1992-08-25 | Olin Corporation | Method of making coated electrical connectors |
JPH07120858B2 (ja) | 1990-03-30 | 1995-12-20 | 株式会社日立製作所 | 多層プリント回路板およびその製造方法 |
JPH0465184A (ja) | 1990-07-05 | 1992-03-02 | Kansai Paint Co Ltd | 電着前処理方法 |
JP2529459B2 (ja) * | 1990-10-22 | 1996-08-28 | 松下電器産業株式会社 | 半導体装置とこれにおけるボンディング方法 |
JP2505314B2 (ja) * | 1991-01-22 | 1996-06-05 | 松下電器産業株式会社 | 電子チップ部品の金属バンプ形成方法 |
RU2032286C1 (ru) * | 1991-01-28 | 1995-03-27 | Особое конструкторское бюро "Спектр" при Рязанском радиотехническом институте | Печатная плата с однотипными навесными элементами |
ATE125666T1 (de) | 1991-02-07 | 1995-08-15 | Siemens Ag | Mikromehrlagenverdrahtung. |
JP3202271B2 (ja) * | 1991-10-09 | 2001-08-27 | 株式会社東芝 | 半導体装置の製造方法 |
US5274913A (en) | 1991-10-25 | 1994-01-04 | International Business Machines Corporation | Method of fabricating a reworkable module |
JP3129796B2 (ja) | 1991-11-21 | 2001-01-31 | ニチモウ株式会社 | 切断方法 |
JPH05275487A (ja) | 1991-11-22 | 1993-10-22 | Sumitomo 3M Ltd | 電子部品表面保護材、その表面保護材を備えた電子部品、およびその表面保護材を使用した電子部品の電気的接続方法 |
JP3242992B2 (ja) | 1992-06-17 | 2001-12-25 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
JP3348454B2 (ja) * | 1993-02-05 | 2002-11-20 | ソニー株式会社 | 酸化防止方法 |
JP3278494B2 (ja) | 1993-06-04 | 2002-04-30 | アクトロニクス株式会社 | 静止誘導機器巻線の加温方法 |
JP3334301B2 (ja) | 1993-11-25 | 2002-10-15 | 日本メクトロン株式会社 | フッ素樹脂基質と金属との接着剤 |
IL111497A (en) | 1993-12-08 | 2001-01-28 | Rohco Inc Mcgean | Seelan preparations are useful as adhesives |
CA2118544A1 (en) | 1993-12-30 | 1995-07-01 | Henry W. Krautter | Reliability elastomeric keypads and method for making same |
US5639989A (en) | 1994-04-19 | 1997-06-17 | Motorola Inc. | Shielded electronic component assembly and method for making the same |
US5734008A (en) | 1994-10-28 | 1998-03-31 | Sumitomo Chemical Company, Limited | Polyimide film |
DE19535068C2 (de) | 1995-09-21 | 1997-08-21 | Lpkf Cad Cam Systeme Gmbh | Beschichtung zur strukturierten Erzeugung von Leiterbahnen auf der Oberfläche von elektrisch isolierenden Substraten, Verfahren zum Herstellen der Beschichtung und von strukturierten Leiterbahnen |
GB9608952D0 (en) | 1995-09-22 | 1996-07-03 | Bnfl Fluorchem Ltd | Coating compositions |
US7112265B1 (en) | 1996-02-14 | 2006-09-26 | Lifescan Scotland Limited | Disposable test strips with integrated reagent/blood separation layer |
WO1997039610A1 (en) | 1996-04-18 | 1997-10-23 | International Business Machines Corporation | Organic-metallic composite coating for copper surface protection |
WO1998058117A1 (en) | 1997-06-14 | 1998-12-23 | The Secretary Of State For Defence | Surface coatings |
JPH1112716A (ja) | 1997-06-19 | 1999-01-19 | Seiko Epson Corp | ロウ接用材料およびその製造方法 |
JPH1140907A (ja) | 1997-07-17 | 1999-02-12 | Fuji Photo Film Co Ltd | プリント配線板及び部品取り付け方法 |
US5858074A (en) | 1997-07-29 | 1999-01-12 | National Research Council Of Canada | Organic solderability preservative compositions |
JP3420492B2 (ja) | 1998-01-23 | 2003-06-23 | 京セラ株式会社 | 半導体装置 |
JP3551007B2 (ja) | 1998-03-02 | 2004-08-04 | セイコーエプソン株式会社 | ワイヤボンディング方法および装置ならびにワイヤバンプの形成方法 |
JP3974256B2 (ja) | 1998-04-22 | 2007-09-12 | 新日鐵化学株式会社 | アルカリ現像型感光性樹脂組成物 |
JPH11319635A (ja) | 1998-05-15 | 1999-11-24 | Omron Corp | 接点用有機物塗布装置及び接点用有機物塗布方法 |
GB9821267D0 (en) | 1998-10-01 | 1998-11-25 | Secr Defence | Surface coatings |
JP2002531589A (ja) * | 1998-11-27 | 2002-09-24 | メタルフェルエーデルンク ゲーエムベーハー ウント コー.カーゲー | プラスチック表面層から成る被覆層、及びこの被覆層の製造法並びに装置 |
US6284308B2 (en) | 1998-12-25 | 2001-09-04 | Victor Company Of Japan, Ltd. | Manufacturing method of printed circuit board |
JP2000211057A (ja) | 1999-01-26 | 2000-08-02 | Hitachi Chem Co Ltd | 積層用中間板 |
SG93210A1 (en) | 1999-06-29 | 2002-12-17 | Univ Singapore | Method for lamination of fluoropolymer to metal and printed circuit board (pcb) substrate |
JP3640337B2 (ja) | 1999-10-04 | 2005-04-20 | 信越化学工業株式会社 | 圧力センサー装置 |
IL132898A (en) | 1999-11-11 | 2009-09-01 | Nds Ltd | System for bitstream generation |
JP3451373B2 (ja) * | 1999-11-24 | 2003-09-29 | オムロン株式会社 | 電磁波読み取り可能なデータキャリアの製造方法 |
EP1172393B1 (en) | 1999-12-17 | 2007-10-31 | DAICEL CHEMICAL INDUSTRIES, Ltd. | Curable resin composition, process for producing the same, and coated object made with the same |
JP2001257437A (ja) | 2000-03-10 | 2001-09-21 | Denso Corp | 電子回路基板及びその製造方法 |
US6335224B1 (en) | 2000-05-16 | 2002-01-01 | Sandia Corporation | Protection of microelectronic devices during packaging |
DE10026714A1 (de) | 2000-05-30 | 2001-12-13 | Hueck Folien Gmbh | Verbundfolie, Verfahren zu ihrer Herstellung und ihre Verwendung |
US7465478B2 (en) | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
DE10051053A1 (de) | 2000-10-14 | 2002-05-02 | Bosch Gmbh Robert | Verfahren zum Schutz elektronischer oder mikromechanischer Bauteile |
US20020134588A1 (en) | 2000-12-18 | 2002-09-26 | Dollarhite James Michael | Hardsurfacing/hardfacing pertaining primarly to the horizontal directional drilling (HDD) industry utilizing technogenia |
JP4644945B2 (ja) * | 2001-01-31 | 2011-03-09 | 住友ベークライト株式会社 | 半田接合用硬化性フラックス、半田接合部、半導体パッケージ及び半導体装置 |
DE10114897A1 (de) * | 2001-03-26 | 2002-10-24 | Infineon Technologies Ag | Elektronisches Bauteil |
US6969472B2 (en) | 2001-04-19 | 2005-11-29 | Lsi Logic Corporation | Method of fabricating sub-micron hemispherical and hemicylidrical structures from non-spherically shaped templates |
JP2002329741A (ja) | 2001-05-07 | 2002-11-15 | Sumiden Magnet Wire Kk | 銅ボンディングワイヤー |
US6589639B2 (en) | 2001-05-23 | 2003-07-08 | International Business Machines Corporation | Hole fill composition and method for filling holes in a substrate |
US6803092B2 (en) | 2001-06-26 | 2004-10-12 | 3M Innovative Properties Company | Selective deposition of circuit-protective polymers |
EP1402321A1 (en) | 2001-07-04 | 2004-03-31 | Showa Denko K.K. | Resist curable resin composition and cured article thereof |
DE10133739A1 (de) | 2001-07-11 | 2003-01-30 | Mewa Textil Service Ag & Co Man Ohg | Transportbehälter |
SG117395A1 (en) | 2001-08-29 | 2005-12-29 | Micron Technology Inc | Wire bonded microelectronic device assemblies and methods of manufacturing same |
US6500529B1 (en) | 2001-09-14 | 2002-12-31 | Tonoga, Ltd. | Low signal loss bonding ply for multilayer circuit boards |
JP4409134B2 (ja) | 2001-10-09 | 2010-02-03 | パナソニック株式会社 | 実装システム |
TW545092B (en) | 2001-10-25 | 2003-08-01 | Matsushita Electric Ind Co Ltd | Prepreg and circuit board and method for manufacturing the same |
JP4075379B2 (ja) | 2002-01-08 | 2008-04-16 | 株式会社デンソー | フッ素樹脂の表面処理方法およびフッ素樹脂を用いたプリント配線基板の製造方法 |
US20030215588A1 (en) | 2002-04-09 | 2003-11-20 | Yeager Gary William | Thermoset composition, method, and article |
JP4499344B2 (ja) | 2002-05-28 | 2010-07-07 | 株式会社日立製作所 | 樹脂組成物とそれを用いたプリプレグ,積層板および多層プリント回路板 |
US6776827B2 (en) | 2002-09-23 | 2004-08-17 | Syed M. Hasan | Method and solution for treating fluorocarbon surfaces |
JP2004184340A (ja) | 2002-12-05 | 2004-07-02 | Tanaka Kikinzoku Kogyo Kk | Dnaプローブ固定電極の製造方法 |
JP4208597B2 (ja) | 2003-02-17 | 2009-01-14 | シャープ株式会社 | 表示装置、およびこれを用いた携帯電話端末、モバイルゲーム端末、テレビ受像機、立体表示システム |
RU2233301C1 (ru) * | 2003-09-16 | 2004-07-27 | Федеральное государственное унитарное предприятие "Московское машиностроительное производственное предприятие "Салют" | Способ нанесения покрытия на изделия |
JP2005112981A (ja) | 2003-10-07 | 2005-04-28 | Hitachi Chem Co Ltd | 低誘電率樹脂組成物およびそれを用いたプリプレグ、金属張積層板、印刷配線板 |
US20050121226A1 (en) | 2003-10-21 | 2005-06-09 | Park Electrochemical Corporation | Laminates having a low dielectric constant, low disapation factor bond core and method of making same |
JP4896367B2 (ja) | 2003-10-23 | 2012-03-14 | パナソニック株式会社 | 電子部品の処理方法及び装置 |
US6923221B2 (en) | 2003-12-04 | 2005-08-02 | Gilbarco Inc. | Vapor recovery system with ORVR compensation |
JP4195365B2 (ja) | 2003-12-05 | 2008-12-10 | アルプス電気株式会社 | 難燃性及び耐湿性を有する回路基板 |
JP4551654B2 (ja) | 2003-12-09 | 2010-09-29 | 株式会社神戸製鋼所 | プリント配線基板の穴あけ加工に使用する樹脂被覆金属板 |
JP4694251B2 (ja) | 2004-06-10 | 2011-06-08 | 四国化成工業株式会社 | 無鉛半田付け用の銅または銅合金の表面処理剤及びその利用 |
US8183386B2 (en) | 2004-06-10 | 2012-05-22 | Shikoku Chemicals Corporation | Phenylnaphthylimidazole compound and usage of the same |
DE102004030388A1 (de) | 2004-06-23 | 2006-01-26 | Ormecon Gmbh | Artikel mit einer Beschichtung von elektrisch leitfähigem Polymer und Verfahren zu deren Herstellung |
US7673970B2 (en) | 2004-06-30 | 2010-03-09 | Lexmark International, Inc. | Flexible circuit corrosion protection |
JP5010112B2 (ja) | 2004-07-26 | 2012-08-29 | 新神戸電機株式会社 | プリプレグの製造法、積層板およびプリント配線板の製造法 |
JP4843214B2 (ja) * | 2004-11-16 | 2011-12-21 | 株式会社東芝 | モジュール基板およびディスク装置 |
US7985677B2 (en) | 2004-11-30 | 2011-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7579134B2 (en) | 2005-03-15 | 2009-08-25 | E. I. Dupont De Nemours And Company | Polyimide composite coverlays and methods and compositions relating thereto |
JP4262699B2 (ja) | 2005-06-22 | 2009-05-13 | 日本航空電子工業株式会社 | 配線基板 |
JP2007010794A (ja) | 2005-06-28 | 2007-01-18 | Hitachi Chem Co Ltd | 感光性樹脂組成物及び感光性エレメント |
JP2007084764A (ja) | 2005-09-26 | 2007-04-05 | Jsr Corp | コーティング材およびその製造方法 |
JP4722669B2 (ja) | 2005-10-26 | 2011-07-13 | 株式会社日立ハイテクインスツルメンツ | プラズマ洗浄装置 |
JP4438735B2 (ja) | 2005-10-31 | 2010-03-24 | 日本ピラー工業株式会社 | フッ素樹脂プリント基板 |
JP2007129039A (ja) | 2005-11-02 | 2007-05-24 | Nippon Pillar Packing Co Ltd | フッ素樹脂プリント基板及びその製造方法 |
US20070258722A1 (en) | 2006-05-08 | 2007-11-08 | Jin Yu | Optical receiver |
JP2007326956A (ja) | 2006-06-07 | 2007-12-20 | Kaneka Corp | プリプレグ、積層板、およびこれらからなるプリント配線板 |
JP4861072B2 (ja) * | 2006-06-20 | 2012-01-25 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
US7527915B2 (en) | 2006-07-19 | 2009-05-05 | E. I. Du Pont De Nemours And Company | Flame retardant multi-layer photoimagable coverlay compositions and methods relating thereto |
CN101145451B (zh) | 2006-08-29 | 2010-04-14 | 松下电器产业株式会社 | 触点开关 |
US8004860B2 (en) | 2006-08-29 | 2011-08-23 | Texas Instruments Incorporated | Radiofrequency and electromagnetic interference shielding |
US20090008796A1 (en) | 2006-12-29 | 2009-01-08 | United Test And Assembly Center Ltd. | Copper on organic solderability preservative (osp) interconnect |
US20080176096A1 (en) | 2007-01-22 | 2008-07-24 | Yen-Hang Cheng | Solderable layer and a method for manufacturing the same |
GB0703172D0 (en) | 2007-02-19 | 2007-03-28 | Pa Knowledge Ltd | Printed circuit boards |
KR100882023B1 (ko) | 2007-05-25 | 2009-02-05 | 한국생산기술연구원 | 표면에너지 제어를 이용한 패터닝 방법 |
JP2009051876A (ja) | 2007-08-23 | 2009-03-12 | Three M Innovative Properties Co | コーティング組成物及びそれを使用した物品 |
US8071160B2 (en) | 2007-10-29 | 2011-12-06 | Integrated Surface Technologies | Surface coating process |
WO2010020753A2 (en) | 2008-08-18 | 2010-02-25 | Semblant Limited | Halo-hydrocarbon polymer coating |
US8618420B2 (en) * | 2008-08-18 | 2013-12-31 | Semblant Global Limited | Apparatus with a wire bond and method of forming the same |
US8995146B2 (en) | 2010-02-23 | 2015-03-31 | Semblant Limited | Electrical assembly and method |
GB201203927D0 (en) | 2012-03-06 | 2012-04-18 | Semblant Ltd | Coated electrical assembly |
GB2485419B (en) | 2010-11-15 | 2015-02-25 | Semblant Ltd | Method for reducing creep corrosion |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2741623C1 (ru) * | 2019-10-03 | 2021-01-28 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Способ формирования защитного покрытия на поверхности бескорпусных элементов |
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