KR940004858A - 반도체장치 및 그 제작방법 - Google Patents

반도체장치 및 그 제작방법 Download PDF

Info

Publication number
KR940004858A
KR940004858A KR1019930016789A KR930016789A KR940004858A KR 940004858 A KR940004858 A KR 940004858A KR 1019930016789 A KR1019930016789 A KR 1019930016789A KR 930016789 A KR930016789 A KR 930016789A KR 940004858 A KR940004858 A KR 940004858A
Authority
KR
South Korea
Prior art keywords
film
silicon oxide
semiconductor device
oxide film
manufacturing
Prior art date
Application number
KR1019930016789A
Other languages
English (en)
Other versions
KR0131062B1 (ko
Inventor
순페이 야마자끼
장홍용
Original Assignee
순페이 야마자끼
가부시키가이샤 한도오따이 에네루기 겐큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5177410A external-priority patent/JPH0786593A/ja
Priority claimed from JP05191934A external-priority patent/JP3122699B2/ja
Application filed by 순페이 야마자끼, 가부시키가이샤 한도오따이 에네루기 겐큐쇼 filed Critical 순페이 야마자끼
Publication of KR940004858A publication Critical patent/KR940004858A/ko
Application granted granted Critical
Publication of KR0131062B1 publication Critical patent/KR0131062B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

저온에서의 특성·신뢰성이 우수한 박막트랜지스터를 고 스루풋으로 제조효율이 양효하게 제조하는 방법을 제공한다. 이 방법은 절연기판상에 박막 트랜지스터(TFT)를 형성하는 공정에 있어서, 반로체피막을 형성한 후 TEOS를 원료로 하여 화학적 기상성장법에 의해 게이트 산화막이 되는 산화규소막을 제작하고, 바람직하게는 산소, 오존, 산화질소 분위기 중에서 이것에 펄스 레이저광 또는 자외광을 조사하는 것에 의해 산화규소막 중의 탄소나 탄화수소등의 클러스터를 제거하고, 따라서 막중의 트랩센터를 제거하여, 게이트 산화막으로서 적당한 특성을 나타내는 산화막으로 하는 것을 특징으로 하는 박막형 반도체장치의 제작방법이다.
또한, 산화규소막으로 이루어지는 게이트 절연막에 대하여 질소 이온을 주입하고, 이어서 적외광에 의한 어닐을 행하는 것에 의해 게이트 절연막을 산화 질화규소로 하여 내압의 향상, 비유전율의 향상, 막질의 치밀화를 실현한다. 이렇게 하는 것으로서 TFT의 특성을 안정화시켜 신뢰성을 향상시킨다.

Description

반도체장치 및 그 제작방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 TFT(박막 트랜지스터)의 제작 방법도,
제2도는 본 발명에 의한 TFT의 제작 방법도,
제3도는 본 발명에 사용한 레이저, 자외광 처리장치의 개념도,
제4도는 실시예의 제작 공정도,
제5도는 실시예의 제작 공정도,
제6도는 실시예의 제작 공정도,
제7도는 본 발명에 의한 TFT의 제작방법.

Claims (25)

  1. 절연 기판상에 반도체 피막을 형성하는 공정과, 상기 반도체 피막상에 유기실란 또는 그 일부의 수소, 탄소 또는 탄화 수소기를 불소에 의해 치환(치환)한 재료를 원료로 하는 화학적 기상 성장법에 의해 산화규소막을 형성하는 공정과, 상기 반도체피막 및 산화규소막에 펄프 레이저광 또는 그것과 동등의 강광을 조사하는 공정과, 상기 산화규소막상에 게이트 전극을 형성하는 공정을 갖는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  2. 제1항에 있어서, 산화규소막을 기판온도 200-500℃에서 형성하는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  3. 제1항에 있어서, 게이트 전극 형성후, 게이트 전극을 주된 마스크로 하여 자기정합적으로 고속 이온을 조사하는 공정과, 상기 이온 조사후 상기 게이트 전극을 주된 마스크로하여 펄스레이저광 또는 그것과 동등의 강광을 조사하는 공정을 갖는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  4. 제1항에 있어서, 상기 유기 실란은 테트라·에틸·옥시실란으로 이루어지는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  5. 제1항에 있어서, 상기 화학적 기상성장법은 플라즈마 CVD, 열 CVD, 포토 CVD 또는 포토 플라즈마 CVD인 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  6. 제1항에 있어서, 상기 조사 공정전에 상기 산화규소막을 400∼700℃의 질소 분위기 중에서 열어닐하는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  7. 제1항에 있어서, 상기 조사 공정후 상기 산화규소막을 400∼700℃의 질소 분위기 중에서 열어닐 하는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  8. 절연기판상에 반도체피막을 형성하는 공정과, 상기 반도체피막상에 레이저광 또는 그것과 동등의 강광에 대하여 실질적으로 투명한 보호절연막을 형성하는 공정과, 상기 반도체피막과 펄스레이저광 또는 그것과 동등의 강광을 조사하는 것에 의해 상기 반도체피막의 결정성을 개선시키는 공정과, 상기 보호 절연피막을 제거하는 것에 의해 상기 반도체피막 표면을 노출시키는 공정과, 유기실란 또는 그 일부의 수소, 탄소 또는 탄화수소기를 불소에 의해 치환한 재료를 원료로 하는 화학적 기상 성장법에 의해 산화규소막을 형성하는 공정과, 상기 반도체피막 및 산화규소막에 펄스 레이저광 또는 그것과 동등의 강광을 조사하는 공정과, 상기 산화규소막상에 게이트 전극을 형성하는 공정을 갖는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  9. 제8항에 있어서, 산화규소막을 기판온도 200∼500℃에서 형성하는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  10. 제8항에 있어서, 게이트 전극 형성후 게이트 전극을 주된 마스크로하여 자기 정합적으로 고속 이온을 조사하는 공정과, 상기 이온 조사후 상기 게이트 전극을 주된 마스크로하여 펄스레이저광 또는 그것과 동등의 강광을 조사하는 공정을 갖는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  11. 제8항에 있어서, 상기 유기실란은 테트라·에틸·옥시실란으로 이루어지는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  12. 제8항에 있어서, 상기 화학적 기상성장법은 플라즈마 CVD, 열 CVD, 포토 CVD 또는 포토플라즈마 CVD인 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  13. 제8항에 있어서, 상기 조사 공정전에 상기 산화규소막을 400∼700℃의 질소 분위기 중에서 열어닐 하는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  14. 제8항에 있어서, 상기 조사 공정후에 상기 산화규소막을 400∼700℃의 질소 또는 산화 분위기 중에서 열어닐 하는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  15. 절연기판상에, 반도체 피막을 형성하는 공정과, 상기 반도체 피막상에 유기실란 또는 그 일부의 수소, 탄소 탄화수소기를 불소에 의해 치환한 재료를 원료로 하는 화학적 기상성장법에 의해 산화규소막을 형성하는 공정과, 상기 반도체피막 및 산화규소막에 산소, 오존 또는 산화질소를 포함한 분위기 중에서 파장 300nm이하의 자외광을 조사하는 공정과, 상기 산화규소막상에 게이트 전극을 형성하는 공정을 갖는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  16. 제15항에 있어서, 상기 유기실란은 테트라·에틸·옥시실란으로 이루어지는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  17. 제15항에 있어서, 상기 화학적 기상성장법은 플라즈마 CVD, 열 CVD, 포토 CVD 또는 포토플라즈마 CVD인 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  18. 절연기판상에 규소 반도체피막을 형성하는 공정과, 500∼700℃ 온도의 산화물 기체중에서 상기 규소 반도체피막의 표면을 산화하고, 그 표면에 20∼200Å의 두께의 제1의 산화규소층을 형성하는 공정과, 상기 제1의 산화규소층상에 유기실란 또는 그 일부의 수소, 탄소 또는 탄화수소기를 불소에 의해 치환한 재료를 원료로 하는 화학적 기상성장법에 의해 제2의 산화규소막을 형성하는 공정과, 상기 제2의 산화규소층을 광어닐하는 공정과, 상기 반도체피막 및 산화규소막에 펄스레이저광 또는 그것과 동등의 강광을 조사하는 공정과, 상기 산화규소막 상에 게이트 전극을 형성하는 공정을 갖는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  19. 제15항에 있어서, 상기 광어닐을 펄스 레이저광 또는 그것과 동등의 강광을 상기 제2의 산화규소층에 조사하는 것에 의해 행하는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  20. 제20항에 있어서, 상기 산화물 기체는 순도 99.9％이상의 건조화 산소로 이루어지는 것을 특징으로 하는 박막형 반도체장치의 제작방법.
  21. 산화규소막을 갖는 반도체장치로서, 상기 산화규소막의 표면이 질화되어 있는 것을 특징으로 하는 반도체장치.
  22. 절연게이트형 전계효과 반도체장치로서, 그 표면이 질화된 산화규소막에 의해 게이트 절연막이 구성되어 있는 것을 특징으로 하는 반도체장치.
  23. 산화규소막을 갖는 반도체장치의 제작방법으로서, 산화규소막으로 이루어진 절연막 표면에 질소 이온을 주입하는 것에 의해 상기 산화규소막 표면을 산화질화규소로 하는 것을 특징으로 하는 반도체장치의 제작방법.
  24. 절연게이트형 전계효과 반도체장치의 제작방법으로서, 게이트 절연막으로서 산화규소막을 형성하는 공정과, 상기 산화규소막 표면에 질소이온을 주입하는 공정을 갖는 것을 특징으로 하는 반도체장치의 제작방법.
  25. 제24항에 있어서, 질소이온 주입 다음에 적외광의 조사에 의한 어닐을 행하는 것을 특징으로 하는 반도체장치의 제작방법.
KR1019930016789A 1992-08-27 1993-08-27 반도체장치 제작방법 KR0131062B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP92-252296 1992-08-27
JP25229692 1992-08-27
JP93-177410 1993-06-24
JP5177410A JPH0786593A (ja) 1993-06-24 1993-06-24 半導体装置およびその作製方法
JP05191934A JP3122699B2 (ja) 1992-08-27 1993-07-06 薄膜状半導体装置の作製方法。
JP93-191934 1993-07-06

Publications (2)

Publication Number Publication Date
KR940004858A true KR940004858A (ko) 1994-03-16
KR0131062B1 KR0131062B1 (ko) 1998-04-14

Family

ID=27324414

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930016789A KR0131062B1 (ko) 1992-08-27 1993-08-27 반도체장치 제작방법

Country Status (3)

Country Link
US (3) US6168980B1 (ko)
KR (1) KR0131062B1 (ko)
CN (6) CN1052569C (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100385721B1 (ko) * 2000-02-16 2003-05-27 주식회사 엘지화학 무광택 내열성 열가소성 수지 조성물 및 그의 제조방법
KR100446651B1 (ko) * 2001-11-16 2004-09-04 주식회사 엘지화학 열용착성이 우수한 열가소성 수지 조성물
KR100472018B1 (ko) * 2001-11-16 2005-03-08 주식회사 엘지화학 열용착성이 우수한 열가소성 수지 조성물

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1052569C (zh) * 1992-08-27 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
JP3587537B2 (ja) * 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW371796B (en) * 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
JP3729955B2 (ja) * 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7056381B1 (en) * 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6599790B1 (en) 1996-02-15 2003-07-29 Semiconductor Energy Laboratory Co., Ltd Laser-irradiation method and laser-irradiation device
TW335503B (en) * 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
US5955825A (en) * 1996-04-26 1999-09-21 Mitsubishi Materials Corporation Crystal oscillator and manufacturing method thereof
US6897105B1 (en) * 1998-09-16 2005-05-24 Texas Instrument Incorporated Method of forming metal oxide gate structures and capacitor electrodes
AUPO347196A0 (en) * 1996-11-06 1996-12-05 Pacific Solar Pty Limited Improved method of forming polycrystalline-silicon films on glass
JP4180689B2 (ja) * 1997-07-24 2008-11-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100505452B1 (ko) * 1997-12-30 2005-10-14 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성 방법
JP2000039628A (ja) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
KR100474385B1 (ko) * 1998-09-03 2005-08-30 엘지.필립스 엘시디 주식회사 비정질실리콘박막을결정화하는방법과이를이용한다결정실리콘박막트랜지스터제조방법
KR20000019893A (ko) * 1998-09-16 2000-04-15 구본준, 론 위라하디락사 박막트랜지스터
US6656779B1 (en) * 1998-10-06 2003-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof
JP3631384B2 (ja) * 1998-11-17 2005-03-23 富士通ディスプレイテクノロジーズ株式会社 液晶表示装置及び液晶表示装置の基板製造方法
JP3483484B2 (ja) 1998-12-28 2004-01-06 富士通ディスプレイテクノロジーズ株式会社 半導体装置、画像表示装置、半導体装置の製造方法、及び画像表示装置の製造方法
US6511921B1 (en) * 1999-01-12 2003-01-28 Sumco Phoenix Corporation Methods for reducing the reactivity of a semiconductor substrate surface and for evaluating electrical properties of a semiconductor substrate
US6593195B1 (en) * 1999-02-01 2003-07-15 Agere Systems Inc Stable memory device that utilizes ion positioning to control state of the memory device
GB2377548B (en) * 2001-01-05 2003-06-18 Esm Ltd Method of fabricating a gate dielectric layer for a thin film transistor
US6771239B1 (en) * 1999-05-17 2004-08-03 Seiko Epson Corporation Method for manufacturing an active matrix substrate
KR100631011B1 (ko) * 1999-08-12 2006-10-04 엘지.필립스 엘시디 주식회사 박막트랜지스터 제조방법
US6777274B2 (en) * 2000-01-25 2004-08-17 Samsung Electronics Co., Ltd. Low temperature polycrystalline silicon type thin film transistor and a method of the thin film transistor fabrication
US6475930B1 (en) * 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
US6833329B1 (en) * 2000-06-22 2004-12-21 Micron Technology, Inc. Methods of forming oxide regions over semiconductor substrates
US6686298B1 (en) * 2000-06-22 2004-02-03 Micron Technology, Inc. Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
US6660657B1 (en) 2000-08-07 2003-12-09 Micron Technology, Inc. Methods of incorporating nitrogen into silicon-oxide-containing layers
US6638876B2 (en) 2000-09-19 2003-10-28 Mattson Technology, Inc. Method of forming dielectric films
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2002170825A (ja) * 2000-11-30 2002-06-14 Nec Corp 半導体装置及びｍｉｓ型半導体装置並びにその製造方法
US7045444B2 (en) * 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI221645B (en) * 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) * 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) * 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5088993B2 (ja) * 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4993810B2 (ja) 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW523931B (en) 2001-02-20 2003-03-11 Hitachi Ltd Thin film transistor and method of manufacturing the same
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
US6878585B2 (en) * 2001-08-29 2005-04-12 Micron Technology, Inc. Methods of forming capacitors
US6812064B2 (en) * 2001-11-07 2004-11-02 Micron Technology, Inc. Ozone treatment of a ground semiconductor die to improve adhesive bonding to a substrate
JP2003142579A (ja) * 2001-11-07 2003-05-16 Hitachi Ltd 半導体装置の製造方法および半導体装置
US6723599B2 (en) * 2001-12-03 2004-04-20 Micron Technology, Inc. Methods of forming capacitors and methods of forming capacitor dielectric layers
KR100641762B1 (ko) * 2001-12-07 2006-11-06 동경 엘렉트론 주식회사 절연막의 질화 방법, 반도체 장치 및 반도체 장치의 제조방법, 기판 처리 장치 및 기판 처리 방법
JP3995476B2 (ja) * 2001-12-28 2007-10-24 三洋電機株式会社 表示装置及びその製造方法
JP3953320B2 (ja) * 2001-12-28 2007-08-08 三洋電機株式会社 表示装置及びその製造方法
TWI296062B (en) * 2001-12-28 2008-04-21 Sanyo Electric Co Liquid crystal display device
TWI230304B (en) * 2002-03-04 2005-04-01 Sanyo Electric Co Display device with reflecting layer
US20030168730A1 (en) * 2002-03-08 2003-09-11 Howard Davidson Carbon foam heat exchanger for integrated circuit
US7163901B2 (en) * 2002-03-13 2007-01-16 Varian Semiconductor Equipment Associates, Inc. Methods for forming thin film layers by simultaneous doping and sintering
US6878415B2 (en) * 2002-04-15 2005-04-12 Varian Semiconductor Equipment Associates, Inc. Methods for chemical formation of thin film layers using short-time thermal processes
WO2003090268A1 (fr) * 2002-04-19 2003-10-30 Tokyo Electron Limited Procede de traitement de substrat et procede de production de dispositifs a semi-conducteurs
DE10226914B4 (de) * 2002-06-17 2006-03-02 Infineon Technologies Ag Verfahren zur Herstellung einer Spacerstruktur
KR100464424B1 (ko) * 2002-07-05 2005-01-03 삼성전자주식회사 누설 전류를 감소시킬 수 있는 게이트 절연막 형성방법
CN1326638C (zh) * 2002-07-19 2007-07-18 上海华虹（集团）有限公司 一种去除硅化物形成过程中多余金属的方法
US6861338B2 (en) * 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
KR20040021758A (ko) * 2002-09-04 2004-03-11 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막트랜지스터 제조방법
KR100487256B1 (ko) * 2002-10-31 2005-05-03 엘지.필립스 엘시디 주식회사 폴리 실리콘 박막 트랜지스터 제조방법
US7374976B2 (en) * 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
US6956237B2 (en) * 2002-12-28 2005-10-18 Lg.Philips Lcd Co., Ltd. Thin film transistor array substrate and method for manufacturing the same
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
TWI240959B (en) 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
JP4406540B2 (ja) * 2003-03-28 2010-01-27 シャープ株式会社 薄膜トランジスタ基板およびその製造方法
US7115488B2 (en) * 2003-08-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2005191482A (ja) * 2003-12-26 2005-07-14 Semiconductor Leading Edge Technologies Inc 半導体装置及びその製造方法
KR101088712B1 (ko) * 2004-05-03 2011-12-01 동부일렉트로닉스 주식회사 반도체 소자의 제조방법
TWI257175B (en) * 2004-11-25 2006-06-21 Chunghwa Picture Tubes Ltd Production of lightly doped drain of low-temperature poly-silicon thin film transistor
TWI311213B (en) * 2004-12-24 2009-06-21 Au Optronics Corp Crystallizing method for forming poly-si films and thin film transistors using same
US20080142903A1 (en) * 2005-05-03 2008-06-19 Jea Hee Kim Semiconductor device and method for manufacturing the same
US7547886B2 (en) * 2005-07-07 2009-06-16 The Regents Of The University Of California Infrared sensor systems and devices
KR101299604B1 (ko) * 2005-10-18 2013-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP2007273919A (ja) * 2006-03-31 2007-10-18 Nec Corp 半導体装置及びその製造方法
CN101473211A (zh) * 2006-07-03 2009-07-01 和舰科技(苏州)有限公司 一种氮氧化硅薄膜的等离子处理程度的光学检测方法
US8034724B2 (en) 2006-07-21 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN100449391C (zh) * 2006-08-04 2009-01-07 北京京东方光电科技有限公司 一种薄膜晶体管液晶显示器像素结构及其制造方法
KR100917654B1 (ko) 2006-11-10 2009-09-17 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 박막트랜지스터 액정 디스플레이 화소 구조 및 그 제조방법
CN100444012C (zh) * 2006-11-10 2008-12-17 北京京东方光电科技有限公司 一种薄膜晶体管液晶显示器像素结构及其制造方法
CN100432812C (zh) * 2006-11-10 2008-11-12 北京京东方光电科技有限公司 一种薄膜晶体管液晶显示器像素结构及其制造方法
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
EP1986230A2 (en) * 2007-04-25 2008-10-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing SOI substrate and method of manufacturing semiconductor device
US9704817B2 (en) * 2007-09-06 2017-07-11 Qortek, Inc. Integrated laser auto-destruct system for electronic components
US8114780B2 (en) * 2009-03-27 2012-02-14 Lam Research Corporation Method for dielectric material removal between conductive lines
DE102009035417B4 (de) * 2009-07-31 2014-12-04 Globalfoundries Dresden Module One Llc & Co. Kg Größere Dichte von dielektrischen Materialien mit kleinem ε in Halbleiterbauelementen durch Anwenden einer UV-Behandlung
CN102543741B (zh) * 2010-12-23 2016-03-30 中芯国际集成电路制造(上海)有限公司 P型金属氧化物半导体管的制作方法
KR101743661B1 (ko) * 2011-06-01 2017-06-07 삼성전자 주식회사 서로 다른 두께의 게이트 절연막을 갖는 모스펫 소자 형성 방법
CN102280381A (zh) * 2011-06-27 2011-12-14 福州华映视讯有限公司 平坦化绝缘层的方法及制作具有平坦化绝缘层的数组基板的方法
JP6013313B2 (ja) * 2013-03-21 2016-10-25 東京エレクトロン株式会社 積層型半導体素子の製造方法、積層型半導体素子、及び、その製造装置
WO2015027348A1 (en) * 2013-08-29 2015-03-05 Jaquet Technology Group Ag Sensor device for determining rotational speed of a rotatable object and turbocharger with such a sensor device
CN105529255A (zh) * 2014-09-30 2016-04-27 中芯国际集成电路制造(上海)有限公司 栅极结构的形成方法以及栅极结构
US20180254290A1 (en) * 2017-03-01 2018-09-06 Government Of The United States, As Represented By The Secretary Of The Air Force Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer
CN108598168A (zh) * 2018-05-03 2018-09-28 深圳吉华微特电子有限公司 抗总剂量辐射的功率场效应晶体管及其制造方法
US10403492B1 (en) * 2018-12-11 2019-09-03 Mattson Technology, Inc. Integration of materials removal and surface treatment in semiconductor device fabrication
KR20210070780A (ko) * 2019-12-05 2021-06-15 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판과 디지털 엑스레이 검출기 및 그 제조 방법
KR20230149660A (ko) 2022-04-20 2023-10-27 박진철 기와 성형용 금형의 공기 배출 구조 및 이를 위한 에어툴
KR20230149659A (ko) 2022-04-20 2023-10-27 박진철 기와 성형용 금형의 공기 배출 구조 및 금형용 스틱형 에어툴

Family Cites Families (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28385E (en) * 1968-03-20 1975-04-08 Method of treating semiconductor devices
US3556880A (en) * 1968-04-11 1971-01-19 Rca Corp Method of treating semiconductor devices to improve lifetime
US3783049A (en) 1971-03-31 1974-01-01 Trw Inc Method of platinum diffusion
JPS55153339A (en) 1979-05-18 1980-11-29 Fujitsu Ltd Manufacture of semiconductor device
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
JPS5898933A (ja) 1981-12-09 1983-06-13 Seiko Epson Corp 半導体装置の製造方法
JPS58190020A (ja) 1982-04-30 1983-11-05 Seiko Epson Corp エピタキシヤル成長法
JPS59201422A (ja) 1983-04-30 1984-11-15 Fujitsu Ltd 半導体装置の製造方法
JPS59204273A (ja) * 1983-05-06 1984-11-19 Ise Electronics Corp 薄膜トランジスタ
US4963503A (en) * 1984-04-09 1990-10-16 Hosiden Electronics Co., Ltd. Method of manufacturing liquid crystal display device
JPS60241269A (ja) 1984-05-16 1985-11-30 Seiko Epson Corp 薄膜トランジスタの製造方法
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4585492A (en) * 1984-07-30 1986-04-29 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced hole trapping
JPS6163020A (ja) 1984-09-04 1986-04-01 Agency Of Ind Science & Technol 薄膜形成方法
JPS61166074A (ja) 1985-01-17 1986-07-26 Fujitsu Ltd 絶縁ゲ−ト型トランジスタ及びその製造方法
EP0178447B1 (en) 1984-10-09 1993-02-17 Fujitsu Limited A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology
JPS6189621A (ja) 1984-10-09 1986-05-07 Fujitsu Ltd 半導体装置の製造方法
JPH07105338B2 (ja) 1985-08-07 1995-11-13 日本電気株式会社 半導体装置の製造方法
JPS62119974A (ja) 1985-11-19 1987-06-01 Sharp Corp 薄膜トランジスタの製造方法
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
JPS62285464A (ja) 1986-06-03 1987-12-11 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ基板及びその製造方法
US4774197A (en) * 1986-06-17 1988-09-27 Advanced Micro Devices, Inc. Method of improving silicon dioxide
JPS6319876A (ja) * 1986-07-11 1988-01-27 Fuji Xerox Co Ltd 薄膜トランジスタ装置
US4810673A (en) * 1986-09-18 1989-03-07 Texas Instruments Incorporated Oxide deposition method
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide
JPS63105970A (ja) 1986-10-23 1988-05-11 Applied Materials Japan Kk 気相成長方法
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPS63157476A (ja) * 1986-12-22 1988-06-30 Seiko Instr & Electronics Ltd 薄膜トランジスタ
US4955697A (en) * 1987-04-20 1990-09-11 Hitachi, Ltd. Liquid crystal display device and method of driving the same
US5153702A (en) * 1987-06-10 1992-10-06 Hitachi, Ltd. Thin film semiconductor device and method for fabricating the same
JPS6425515A (en) 1987-07-22 1989-01-27 Hitachi Ltd Manufacture of semiconductor device
JPS6437029A (en) 1987-07-31 1989-02-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
JPH0640585B2 (ja) * 1987-11-02 1994-05-25 沖電気工業株式会社 薄膜トランジスタ
JP2613403B2 (ja) 1987-11-13 1997-05-28 日本電信電話株式会社 薄膜トランジスタの製造方法
JPH01149475A (ja) 1987-12-04 1989-06-12 Nippon Telegr & Teleph Corp <Ntt> 薄膜トランジスタの製造方法
US4851370A (en) 1987-12-28 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Fabricating a semiconductor device with low defect density oxide
US5153701A (en) 1987-12-28 1992-10-06 At&T Bell Laboratories Semiconductor device with low defect density oxide
JP2623276B2 (ja) 1988-01-22 1997-06-25 株式会社日立製作所 薄膜半導体装置の製造方法
JPH01217423A (ja) * 1988-02-26 1989-08-31 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタアレイ基板
US5225355A (en) * 1988-02-26 1993-07-06 Fujitsu Limited Gettering treatment process
JPH01238024A (ja) 1988-03-17 1989-09-22 Koujiyundo Kagaku Kenkyusho:Kk 半導体装置の酸化膜の製造法
US5274279A (en) 1988-05-17 1993-12-28 Seiko Epson Corporation Thin film CMOS inverter
US5493129A (en) * 1988-06-29 1996-02-20 Hitachi, Ltd. Thin film transistor structure having increased on-current
US5010037A (en) 1988-10-14 1991-04-23 California Institute Of Technology Pinhole-free growth of epitaxial CoSi2 film on Si(111)
US4894352A (en) * 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
JPH02140915A (ja) 1988-11-22 1990-05-30 Seiko Epson Corp 半導体装置の製造方法
JP2880175B2 (ja) 1988-11-30 1999-04-05 株式会社日立製作所 レーザアニール方法及び薄膜半導体装置
DE68921567T2 (de) * 1988-11-30 1995-07-06 Nippon Electric Co Flüssigkristallanzeigetafel mit verminderten Pixeldefekten.
US5187604A (en) * 1989-01-18 1993-02-16 Hitachi, Ltd. Multi-layer external terminals of liquid crystal displays with thin-film transistors
JPH02189954A (ja) 1989-01-18 1990-07-25 Mitsubishi Electric Corp 半導体装置
JPH02224253A (ja) 1989-02-27 1990-09-06 Hitachi Ltd 薄膜半導体装置の製造方法
US5116771A (en) 1989-03-20 1992-05-26 Massachusetts Institute Of Technology Thick contacts for ultra-thin silicon on insulator films
JP2731236B2 (ja) 1989-05-09 1998-03-25 三菱電機株式会社 薄膜結晶層を有する半導体装置の製造方法
JPH0334434A (ja) 1989-06-30 1991-02-14 Hitachi Ltd 薄膜半導体装置及びその製造方法
US5316960A (en) 1989-07-11 1994-05-31 Ricoh Company, Ltd. C-MOS thin film transistor device manufacturing method
US5075259A (en) 1989-08-22 1991-12-24 Motorola, Inc. Method for forming semiconductor contacts by electroless plating
US4996575A (en) 1989-08-29 1991-02-26 David Sarnoff Research Center, Inc. Low leakage silicon-on-insulator CMOS structure and method of making same
US5278093A (en) * 1989-09-23 1994-01-11 Canon Kabushiki Kaisha Method for forming semiconductor thin film
JPH03132041A (ja) 1989-10-18 1991-06-05 Sony Corp 半導体装置の製造方法
JPH03133131A (ja) 1989-10-18 1991-06-06 Mitsubishi Electric Corp 半導体装置
US5153690A (en) 1989-10-18 1992-10-06 Hitachi, Ltd. Thin-film device
JP3029434B2 (ja) 1989-12-29 2000-04-04 正俊 右高 絶縁膜の製造方法及びこの絶縁膜を使用する半導体装置の製造方法
DE69107101T2 (de) * 1990-02-06 1995-05-24 Semiconductor Energy Lab Verfahren zum Herstellen eines Oxydfilms.
JPH0740569B2 (ja) * 1990-02-27 1995-05-01 エイ・ティ・アンド・ティ・コーポレーション Ｅｃｒプラズマ堆積方法
DE69127395T2 (de) * 1990-05-11 1998-01-02 Asahi Glass Co Ltd Verfahren zum Herstellen eines Dünnfilm-Transistors mit polykristallinem Halbleiter
DE69125886T2 (de) * 1990-05-29 1997-11-20 Semiconductor Energy Lab Dünnfilmtransistoren
JP2652267B2 (ja) 1990-10-29 1997-09-10 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
JPH04102375A (ja) 1990-08-22 1992-04-03 Ricoh Co Ltd 薄膜トランジスタ
JPH04110470A (ja) 1990-08-30 1992-04-10 Canon Inc 薄膜形成方法
US5112764A (en) 1990-09-04 1992-05-12 North American Philips Corporation Method for the fabrication of low leakage polysilicon thin film transistors
EP0480580A3 (en) * 1990-09-10 1992-09-02 Canon Kabushiki Kaisha Electrode structure of semiconductor device and method for manufacturing the same
EP0475838B1 (en) * 1990-09-10 1996-03-06 Sumitomo Electric Industries, Ltd. Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same
JPH0824193B2 (ja) 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
KR950001360B1 (ko) 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
KR940011483B1 (ko) * 1990-11-28 1994-12-19 가부시끼가이샤 도시바 반도체 디바이스를 제조하기 위한 방법 및 이 방법에 의해 제조되는 반도체 디바이스
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5376561A (en) 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
EP0519079B1 (en) * 1991-01-08 1999-03-03 Fujitsu Limited Process for forming silicon oxide film
JP2650003B2 (ja) 1991-02-14 1997-09-03 信越化学工業株式会社 化学的気相成長法によるシリコン単結晶の製造方法およびその原料クロロシラン類中の超微量元素と製造されたシリコン単結晶中の超微量元素の分別定量方法
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2794678B2 (ja) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH04284675A (ja) 1991-03-13 1992-10-09 Ricoh Co Ltd 半導体装置の製造方法
JPH0824104B2 (ja) * 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
JP2794499B2 (ja) 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH05182923A (ja) * 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
US5414442A (en) * 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
GB9114018D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
JP2888462B2 (ja) 1991-08-26 1999-05-10 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
KR960000225B1 (ko) 1991-08-26 1996-01-03 가부시키가이샤 한도오따이 에네루기 겐큐쇼 절연게이트형 반도체장치의 제작방법
TW243541B (ko) * 1991-08-31 1995-03-21 Samsung Electronics Co Ltd
US5244819A (en) * 1991-10-22 1993-09-14 Honeywell Inc. Method to getter contamination in semiconductor devices
US5288662A (en) 1992-06-15 1994-02-22 Air Products And Chemicals, Inc. Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning
CN1052569C (zh) * 1992-08-27 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
US5300187A (en) * 1992-09-03 1994-04-05 Motorola, Inc. Method of removing contaminants
US5330929A (en) * 1992-10-05 1994-07-19 Motorola, Inc. Method of making a six transistor static random access memory cell
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US5604360A (en) 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
TW226478B (en) 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
JPH06296023A (ja) 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
JP3662263B2 (ja) 1993-02-15 2005-06-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN1052110C (zh) 1993-02-15 2000-05-03 株式会社半导体能源研究所 制造半导体器件的方法
US5275851A (en) * 1993-03-03 1994-01-04 The Penn State Research Foundation Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
CN1095204C (zh) 1993-03-12 2002-11-27 株式会社半导体能源研究所 半导体器件和晶体管
TW241377B (ko) 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
JP3193803B2 (ja) 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
US5569936A (en) 1993-03-12 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing crystallization catalyst
US5624851A (en) 1993-03-12 1997-04-29 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized
US5501989A (en) 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
US5422311A (en) 1993-05-03 1995-06-06 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a conductor layer in a semiconductor device
US5481121A (en) 1993-05-26 1996-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US5488000A (en) 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US5594569A (en) 1993-07-22 1997-01-14 Semiconductor Energy Laboratory Co., Ltd. Liquid-crystal electro-optical apparatus and method of manufacturing the same
US5663077A (en) 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
TW369686B (en) 1993-07-27 1999-09-11 Semiconductor Energy Lab Corp Semiconductor device and process for fabricating the same
US5492843A (en) 1993-07-31 1996-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device and method of processing substrate
JP2975973B2 (ja) 1993-08-10 1999-11-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2762215B2 (ja) 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
JP2814049B2 (ja) 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW264575B (ko) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
JP3562590B2 (ja) 1993-12-01 2004-09-08 株式会社半導体エネルギー研究所 半導体装置作製方法
US5612250A (en) 1993-12-01 1997-03-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a catalyst
JP2860869B2 (ja) 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5654203A (en) 1993-12-02 1997-08-05 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing a thin film transistor using catalyst elements to promote crystallization
KR100319332B1 (ko) 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
JP3378078B2 (ja) 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3402400B2 (ja) * 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
JPH07325323A (ja) 1994-06-02 1995-12-12 Matsushita Electric Ind Co Ltd 液晶表示装置
JPH07332262A (ja) * 1994-06-03 1995-12-22 Toyota Autom Loom Works Ltd スクロール型圧縮機
JPH07335906A (ja) 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
US5508532A (en) * 1994-06-16 1996-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with braded silicon nitride
JP3072000B2 (ja) 1994-06-23 2000-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5970384A (en) * 1994-08-11 1999-10-19 Semiconductor Energy Laboratory Co., Ltd. Methods of heat treating silicon oxide films by irradiating ultra-violet light
US5712191A (en) 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3942651B2 (ja) 1994-10-07 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3486240B2 (ja) 1994-10-20 2004-01-13 株式会社半導体エネルギー研究所 半導体装置
US5756364A (en) 1994-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device using a catalyst
TW447144B (en) 1995-03-27 2001-07-21 Semiconductor Energy Lab Semiconductor device and a method of manufacturing the same
US5835177A (en) * 1995-10-05 1998-11-10 Kabushiki Kaisha Toshiba Array substrate with bus lines takeout/terminal sections having multiple conductive layers
JPH1031231A (ja) * 1996-07-15 1998-02-03 Sony Corp 反射型ゲストホスト液晶表示装置及びその製造方法
US5809481A (en) * 1996-08-08 1998-09-15 David Baron Advertising method and system
US5721827A (en) * 1996-10-02 1998-02-24 James Logan System for electrically distributing personalized information
JP3916823B2 (ja) * 1999-04-07 2007-05-23 シャープ株式会社 アクティブマトリクス基板およびその製造方法、並びにフラットパネル型イメージセンサ
US7146329B2 (en) * 2000-01-13 2006-12-05 Erinmedia, Llc Privacy compliant multiple dataset correlation and content delivery system and methods

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100385721B1 (ko) * 2000-02-16 2003-05-27 주식회사 엘지화학 무광택 내열성 열가소성 수지 조성물 및 그의 제조방법
KR100446651B1 (ko) * 2001-11-16 2004-09-04 주식회사 엘지화학 열용착성이 우수한 열가소성 수지 조성물
KR100472018B1 (ko) * 2001-11-16 2005-03-08 주식회사 엘지화학 열용착성이 우수한 열가소성 수지 조성물

Also Published As

Publication number Publication date
CN1156018C (zh) 2004-06-30
US7329906B2 (en) 2008-02-12
KR0131062B1 (ko) 1998-04-14
CN100483651C (zh) 2009-04-29
US7416907B2 (en) 2008-08-26
CN1560691B (zh) 2010-05-26
CN1052569C (zh) 2000-05-17
US6168980B1 (en) 2001-01-02
CN1248069A (zh) 2000-03-22
CN1088712A (zh) 1994-06-29
CN1637565A (zh) 2005-07-13
CN100465742C (zh) 2009-03-04
US20050003568A1 (en) 2005-01-06
CN1248037A (zh) 2000-03-22
US20050110091A1 (en) 2005-05-26
CN1244891C (zh) 2006-03-08
CN1560691A (zh) 2005-01-05
CN1549316A (zh) 2004-11-24

Similar Documents

Publication Publication Date Title
KR940004858A (ko) 반도체장치 및 그 제작방법
KR0143873B1 (ko) 절연막 및 반도체장치 및 반도체 장치 제조방법
US7094713B1 (en) Methods for improving the cracking resistance of low-k dielectric materials
US5804471A (en) Method of fabricating thin film transistor
KR100407392B1 (ko) 반도체장치제작방법
Inoue et al. Low temperature growth of SiO2 thin film by double-excitation photo-CVD
KR100800495B1 (ko) 반도체 장치의 제조방법
US7381662B1 (en) Methods for improving the cracking resistance of low-k dielectric materials
KR100230485B1 (ko) 반도체 처리장치
TW573052B (en) Insulating film formation method, semiconductor device, and production apparatus
KR950007162A (ko) 절연게이트형 반도체장치 및 그 제조방법
US6815717B2 (en) Thin-film transistor and method of manufacturing the same
JP2003523624A (ja) Ｃｖｄ蒸着膜の電子ビーム改質による低誘電率材料の形成
US7097712B1 (en) Apparatus for processing a semiconductor
EP1157415A1 (en) Silicon oxynitride film
US6008078A (en) Method for manufacturing a semiconductor device
US20080132045A1 (en) Laser-based photo-enhanced treatment of dielectric, semiconductor and conductive films
KR930020566A (ko) 레이저 처리방법 및 레이저 처리장치
US5770486A (en) Method of forming a transistor with an LDD structure
RU2035800C1 (ru) Способ изготовления тонкопленочных транзисторов
KR0172031B1 (ko) 반도체장치의 층간 절연막 형성방법
Licoppe et al. A combination of rapid thermal processing and photochemical deposition for the growth of SiO2 suitable for InP device applications
JP2840802B2 (ja) 半導体材料の製造方法および製造装置
JP3146702B2 (ja) 薄膜トランジスタの製造方法
JPH0855846A (ja) 酸化珪素膜の加熱処理方法および加熱処理装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121019

Year of fee payment: 16

EXPY Expiration of term