CN101473211A - 一种氮氧化硅薄膜的等离子处理程度的光学检测方法 - Google Patents
一种氮氧化硅薄膜的等离子处理程度的光学检测方法 Download PDFInfo
- Publication number
- CN101473211A CN101473211A CNA2006800551510A CN200680055151A CN101473211A CN 101473211 A CN101473211 A CN 101473211A CN A2006800551510 A CNA2006800551510 A CN A2006800551510A CN 200680055151 A CN200680055151 A CN 200680055151A CN 101473211 A CN101473211 A CN 101473211A
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- CN
- China
- Prior art keywords
- plasma treatment
- silicon oxynitride
- oxynitride film
- detecting method
- optical detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
Abstract
一种氮氧化硅薄膜的等离子处理程度的光学检测方法，包括先用化学汽相沉积法在半导体晶片上沉积氮氧化硅薄膜，然后对其进行等离子处理，最后利用光学检测方法对氮氧化硅薄膜的等离子处理程度进行光学检测。根据氮氧化硅薄膜的折射率或反射率的变化判断其等离子处理的程度。
Description
PCT国内申请，说明书已公开。
Claims (1)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2006/001542 WO2008009165A1 (fr) | 2006-07-03 | 2006-07-03 | PROCÉDÉ D'INSPECTION OPTIQUE D'UN DEGRÉ DE TRAITEMENT AU PLASMA D'UN FILM DE SiON |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101473211A true CN101473211A (zh) | 2009-07-01 |
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ID=38956510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800551510A Pending CN101473211A (zh) | 2006-07-03 | 2006-07-03 | 一种氮氧化硅薄膜的等离子处理程度的光学检测方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101473211A (zh) |
| WO (1) | WO2008009165A1 (zh) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02198305A (ja) * | 1989-01-27 | 1990-08-06 | Ricoh Co Ltd | 屈折率・膜厚測定に於ける入射角決定方法 |
| CN1052569C (zh) * | 1992-08-27 | 2000-05-17 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
| WO1999054694A1 (en) * | 1998-04-23 | 1999-10-28 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6090302A (en) * | 1998-04-23 | 2000-07-18 | Sandia | Method and apparatus for monitoring plasma processing operations |
| DE1194763T1 (de) * | 1999-05-17 | 2002-10-17 | Florida Internat University Bo | Nachweis von oberflächenplasmonresonanz mit hoher winkelauflösung und schneller antwortzeit |
| US6160621A (en) * | 1999-09-30 | 2000-12-12 | Lam Research Corporation | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| CN1153056C (zh) * | 2001-04-10 | 2004-06-09 | 华邦电子股份有限公司 | 以光学方法测量温度并监控蚀刻率的方法 |
| CN1272621C (zh) * | 2002-10-30 | 2006-08-30 | 江苏大学 | 界面结合强度的远紫外激光划痕测量方法及装置 |
| US20040258927A1 (en) * | 2003-06-23 | 2004-12-23 | Conzone Samuel D. | Non-destructive quality control method for microarray substrate coatings via labeled doping |
| US8460945B2 (en) * | 2003-09-30 | 2013-06-11 | Tokyo Electron Limited | Method for monitoring status of system components |
| JP2005257651A (ja) * | 2004-03-15 | 2005-09-22 | Omron Corp | プラズマ測定装置及びプラズマ測定方法 |
-
2006
- 2006-07-03 CN CNA2006800551510A patent/CN101473211A/zh active Pending
- 2006-07-03 WO PCT/CN2006/001542 patent/WO2008009165A1/zh active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008009165A1 (fr) | 2008-01-24 |
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Legal Events
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090701 |