CN102543741B - P型金属氧化物半导体管的制作方法 - Google Patents
P型金属氧化物半导体管的制作方法 Download PDFInfo
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- CN102543741B CN102543741B CN201010603101.XA CN201010603101A CN102543741B CN 102543741 B CN102543741 B CN 102543741B CN 201010603101 A CN201010603101 A CN 201010603101A CN 102543741 B CN102543741 B CN 102543741B
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- silicon oxide
- drain electrode
- oxide layer
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- polysilicon gate
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CN201010603101.XA CN102543741B (zh) | 2010-12-23 | 2010-12-23 | P型金属氧化物半导体管的制作方法 |
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CN201010603101.XA CN102543741B (zh) | 2010-12-23 | 2010-12-23 | P型金属氧化物半导体管的制作方法 |
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CN102543741A CN102543741A (zh) | 2012-07-04 |
CN102543741B true CN102543741B (zh) | 2016-03-30 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1088712A (zh) * | 1992-08-27 | 1994-06-29 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
CN101207085A (zh) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN101777494A (zh) * | 2009-01-09 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
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US8138104B2 (en) * | 2005-05-26 | 2012-03-20 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure |
US20070105292A1 (en) * | 2005-11-07 | 2007-05-10 | Neng-Kuo Chen | Method for fabricating high tensile stress film and strained-silicon transistors |
US7875520B2 (en) * | 2008-03-27 | 2011-01-25 | United Microelectronics Corp. | Method of forming CMOS transistor |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1088712A (zh) * | 1992-08-27 | 1994-06-29 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
CN101207085A (zh) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN101777494A (zh) * | 2009-01-09 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
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ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121116 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C14 | Grant of patent or utility model | ||
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