CN102543741A - P型金属氧化物半导体管的制作方法 - Google Patents
P型金属氧化物半导体管的制作方法 Download PDFInfo
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- CN102543741A CN102543741A CN201010603101XA CN201010603101A CN102543741A CN 102543741 A CN102543741 A CN 102543741A CN 201010603101X A CN201010603101X A CN 201010603101XA CN 201010603101 A CN201010603101 A CN 201010603101A CN 102543741 A CN102543741 A CN 102543741A
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CN201010603101.XA CN102543741B (zh) | 2010-12-23 | 2010-12-23 | P型金属氧化物半导体管的制作方法 |
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CN102543741A true CN102543741A (zh) | 2012-07-04 |
CN102543741B CN102543741B (zh) | 2016-03-30 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1088712A (zh) * | 1992-08-27 | 1994-06-29 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
US20070105292A1 (en) * | 2005-11-07 | 2007-05-10 | Neng-Kuo Chen | Method for fabricating high tensile stress film and strained-silicon transistors |
CN101207085A (zh) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN101496145A (zh) * | 2006-06-20 | 2009-07-29 | 应用材料股份有限公司 | 利用原位氮等离子体处理及非原位紫外光固化来增加氮化硅拉伸应力的方法 |
US20090246922A1 (en) * | 2008-03-27 | 2009-10-01 | Meng-Yi Wu | Method of forming cmos transistor |
CN101777494A (zh) * | 2009-01-09 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
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- 2010-12-23 CN CN201010603101.XA patent/CN102543741B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1088712A (zh) * | 1992-08-27 | 1994-06-29 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
US20070105292A1 (en) * | 2005-11-07 | 2007-05-10 | Neng-Kuo Chen | Method for fabricating high tensile stress film and strained-silicon transistors |
CN101496145A (zh) * | 2006-06-20 | 2009-07-29 | 应用材料股份有限公司 | 利用原位氮等离子体处理及非原位紫外光固化来增加氮化硅拉伸应力的方法 |
CN101207085A (zh) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
US20090246922A1 (en) * | 2008-03-27 | 2009-10-01 | Meng-Yi Wu | Method of forming cmos transistor |
CN101777494A (zh) * | 2009-01-09 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
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CN102543741B (zh) | 2016-03-30 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121116 |
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Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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