KR101996773B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101996773B1
KR101996773B1 KR1020187017777A KR20187017777A KR101996773B1 KR 101996773 B1 KR101996773 B1 KR 101996773B1 KR 1020187017777 A KR1020187017777 A KR 1020187017777A KR 20187017777 A KR20187017777 A KR 20187017777A KR 101996773 B1 KR101996773 B1 KR 101996773B1
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South Korea
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insulating layer
electrode
transistor
oxide semiconductor
layer
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Korean (ko)
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KR20180072880A (ko
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？뻬이 야마자끼
준 고야마
게이따로 이마이
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H01L27/1207—
    • H01L21/84—
    • H01L27/0688—
    • H01L27/1225—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dram (AREA)
  • Recrystallisation Techniques (AREA)
KR1020187017777A 2009-10-21 2010-09-27 반도체 장치 Active KR101996773B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-242689 2009-10-21
JP2009242689 2009-10-21
PCT/JP2010/067294 WO2011048929A1 (en) 2009-10-21 2010-09-27 Semiconductor device

Related Parent Applications (1)

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KR1020127009813A Division KR101872229B1 (ko) 2009-10-21 2010-09-27 반도체 장치

Publications (2)

Publication Number Publication Date
KR20180072880A KR20180072880A (ko) 2018-06-29
KR101996773B1 true KR101996773B1 (ko) 2019-07-04

Family

ID=43878612

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020187017777A Active KR101996773B1 (ko) 2009-10-21 2010-09-27 반도체 장치
KR1020127009813A Active KR101872229B1 (ko) 2009-10-21 2010-09-27 반도체 장치
KR1020147006149A Active KR101591613B1 (ko) 2009-10-21 2010-09-27 반도체 장치

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Application Number Title Priority Date Filing Date
KR1020127009813A Active KR101872229B1 (ko) 2009-10-21 2010-09-27 반도체 장치
KR1020147006149A Active KR101591613B1 (ko) 2009-10-21 2010-09-27 반도체 장치

Country Status (7)

Country Link
US (5) US20110089417A1 (enExample)
EP (1) EP2491585B1 (enExample)
JP (15) JP5586412B2 (enExample)
KR (3) KR101996773B1 (enExample)
CN (3) CN105070715B (enExample)
TW (3) TWI570889B (enExample)
WO (1) WO2011048929A1 (enExample)

Families Citing this family (193)

* Cited by examiner, † Cited by third party
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