JP2015500561A - マイクロデバイス転写ヘッドのヒータアセンブリ及びマイクロデバイスを転写する方法 - Google Patents
マイクロデバイス転写ヘッドのヒータアセンブリ及びマイクロデバイスを転写する方法 Download PDFInfo
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- JP2015500561A JP2015500561A JP2014542348A JP2014542348A JP2015500561A JP 2015500561 A JP2015500561 A JP 2015500561A JP 2014542348 A JP2014542348 A JP 2014542348A JP 2014542348 A JP2014542348 A JP 2014542348A JP 2015500561 A JP2015500561 A JP 2015500561A
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- Y10T156/1702—For plural parts or plural areas of single part
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- Y10T156/1707—Discrete spaced laminae on adhered carrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
本願は、この参照により全開示が本明細書内に組み込まれる、2011年11月18日付で出願された米国特許仮出願第61/561,706号、2012年2月3日付で出願された米国特許仮出願第61/594,919号、2012年2月9日付で出願された米国特許仮出願第61/597,109号、及び2012年2月10日付で出願された米国特許仮出願第61/597,658号の優先権を主張するものである。
式中、εo=8.85.10−12、Vはボルト(V)の単位で表される電極−基板間電圧、εrは誘電率、及びdはメートル(m)の単位で表される誘電体の厚さである。2本のグリップ電極を使用する双極グリッパでは、上記式の電圧(V)は電極AとBとの間の電圧の半分、即ち[VA−VB]/2である。基板の電位は、平均電位、即ち[VA=VB]/2に中心がある。この平均値は、通常、VA=[−VB]となり、ゼロである。
る場合があることが理解される。
Claims (24)
- マイクロデバイスを転写する方法であって、
接着層に接続されたマイクロデバイスを搬送するキャリア基板を、前記接着層の液相線温度よりも低い温度に加熱する工程と、
転写ヘッドを前記接着層の前記液相線温度よりも高い温度に加熱する工程と、
前記マイクロデバイスを転写ヘッドに接触させる工程であって、前記転写ヘッドから前記接着層内へと熱を伝導させて前記接着層を少なくとも部分的に融解させる、前記接触させる工程と、
前記転写ヘッドに電圧を印加して前記マイクロデバイスに対してグリップ圧力を生じさせる工程と、
前記転写ヘッドによって前記マイクロデバイスをピックアップする工程と、
前記マイクロデバイスを転写先基板と接触させる工程と、
前記マイクロデバイスを前記転写先基板上にリリースする工程と、
を含む、方法。 - 前記キャリア基板を加熱する工程が、前記キャリア基板を前記接着層の前記液相線温度よりも1℃〜10℃低い温度に加熱する工程を含む、請求項1に記載の方法。
- 前記転写ヘッドを加熱する工程が、前記転写ヘッドを前記接着層の前記液相線温度よりも1℃〜150℃高い温度に加熱する工程を含む、請求項1に記載の方法。
- 前記転写ヘッドを加熱する工程が、前記転写ヘッドを前記接着層の前記液相線温度よりも1℃〜50℃高い温度に加熱する工程を含む、請求項1に記載の方法。
- 前記マイクロデバイス転写ヘッドが、
ベース基板と、
側壁を含むメサ形構造体と、
前記メサ形構造体を覆って形成された電極と、
前記電極を覆う誘電体層と、
を含む、請求項1に記載の方法。 - 前記マイクロデバイスが、
マイクロp−nダイオードと、
前記マイクロp−nダイオードと前記キャリア基板上の接着層との間の金属被覆層と、
を含むマイクロLEDデバイスである、請求項1に記載の方法。 - 前記マイクロデバイスをピックアップする工程が、前記マイクロp−nダイオード、前記金属被覆層、及び前記接着層の一部分をピックアップする工程を含む、請求項6に記載の方法。
- 共形誘電体バリア層が、前記マイクロp−nダイオードの側壁及び前記マイクロp−nダイオードの底面にまで広がっている、請求項7に記載の方法。
- 前記マイクロp−nダイオードの前記底面の下方で前記共形誘電体バリア層の一部分を裂く工程を更に含む、請求項8に記載の方法。
- 前記転写先基板を全体的に加熱する工程を更に含む、請求項1に記載の方法。
- マイクロデバイスが前記転写先基板上にリリースされる場合に、前記転写先基板を局所的に加熱する工程を更に含む、請求項1に記載の方法。
- マイクロデバイスのアレイを転写する方法であって、
接着層の複数の場所に接続されたマイクロデバイスのアレイを搬送する基板を前記接着層の液相線温度に加熱する工程と、
転写ヘッドのアレイを前記接着層の前記液相線温度よりも高い温度に加熱する工程と、
前記マイクロデバイスのアレイを前記転写ヘッドのアレイと接触させる工程であって、前記転写ヘッドのアレイから前記接着層の前記複数の場所内に熱を伝導させて前記接着層の前記複数の場所の部分を少なくとも部分的に融解させる、前記接触させる工程と、
前記転写ヘッドのアレイの一部分に選択的に電圧を印加する工程と、
前記転写ヘッドのアレイのうちの前記部分によって前記マイクロデバイスのアレイの対応する部分をピックアップする工程と、
転写先基板を前記マイクロデバイスのアレイのうちの前記部分と接触させる工程と、
前記マイクロデバイスのアレイのうちの前記部分を少なくとも1つの転写先基板上に選択的にリリースする工程と、
を含む、方法。 - 前記転写ヘッドのアレイが、
ベース基板と、
メサ形構造体のアレイであって、各メサ形構造体が側壁及び前記メサ形構造体を覆って形成された電極を含む、前記メサ形構造体のアレイと、
前記メサ形構造体のアレイ及び各メサ形構造体を覆って形成された各電極を覆う誘電体層と、
を含む、請求項12に記載の方法。 - 前記キャリア基板を加熱する工程が、前記キャリア基板を前記接着層の前記液相線温度よりも1℃〜10℃低い温度に加熱する工程を含む、請求項12に記載の方法。
- 前記接着層の前記複数の場所を前記接着層の前記液相線温度よりも1℃〜10℃低い前記温度に全体的に加熱する工程を含む、請求項14に記載の方法。
- 前記接着層の前記複数の場所を前記接着層の前記液相線温度よりも1℃〜10℃低い前記温度に局所的に加熱する工程を含む、請求項14に記載の方法。
- 前記転写ヘッドのアレイを加熱する工程が、前記転写ヘッドのアレイを前記接着層の前記液相線温度よりも1℃〜150℃高い温度に加熱する工程を含む、請求項11に記載の方法。
- 前記転写ヘッドのアレイを加熱する工程が、前記転写ヘッドを前記接着層の前記液相線温度よりも1℃〜50℃高い温度に加熱する工程を含む、請求項11に記載の方法。
- 前記マイクロデバイスのアレイ内の各マイクロデバイスが、
マイクロp−nダイオードと、
前記マイクロp−nダイオードと前記キャリア基板上の接着層との間の金属被覆層と、
を含むマイクロLEDデバイスである、請求項11に記載の方法。 - 前記マイクロデバイスのアレイをピックアップする工程が、前記マイクロp−nダイオード、前記金属被覆層、及び前記マイクロデバイスのアレイ内の各マイクロデバイスのための前記接着層の前記複数の場所の一部分をピックアップする工程を含む、請求項19に記載の方法。
- 共形誘電体バリア層が、前記マイクロp−nダイオードの各々の側壁及び底面にまで広がっている、請求項20に記載の方法。
- 前記共形誘電体バリア層の一部分を各マイクロp−nダイオードの前記底面の下方の別個の場所で裂く工程を更に含む、請求項21に記載の方法。
- 前記転写先基板を全体的に加熱する工程を更に含む、請求項12に記載の方法。
- マイクロデバイスのアレイが前記転写先基板上にリリースされる場合に、前記転写先基板を局所的に加熱する工程を更に含む、請求項12に記載の方法。
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US201161561706P | 2011-11-18 | 2011-11-18 | |
US61/561,706 | 2011-11-18 | ||
US201261594919P | 2012-02-03 | 2012-02-03 | |
US61/594,919 | 2012-02-03 | ||
US201261597109P | 2012-02-09 | 2012-02-09 | |
US61/597,109 | 2012-02-09 | ||
US201261597658P | 2012-02-10 | 2012-02-10 | |
US61/597,658 | 2012-02-10 | ||
US13/372,422 US8349116B1 (en) | 2011-11-18 | 2012-02-13 | Micro device transfer head heater assembly and method of transferring a micro device |
US13/372,422 | 2012-02-13 | ||
PCT/US2012/064221 WO2013074373A1 (en) | 2011-11-18 | 2012-11-08 | Micro device transfer head heater assembly and method of transferring a micro device |
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JP7106714B2 (ja) | 2015-11-13 | 2022-07-26 | メタ プラットフォームズ テクノロジーズ, リミテッド ライアビリティ カンパニー | ディスプレイ要素の製造において使用するための方法および装置 |
KR20200097278A (ko) * | 2017-12-22 | 2020-08-18 | 토레 엔지니어링 가부시키가이샤 | 실장 방법 및 실장 장치 |
KR102614211B1 (ko) | 2017-12-22 | 2023-12-14 | 토레 엔지니어링 가부시키가이샤 | 실장 방법 및 실장 장치 |
WO2020261870A1 (ja) * | 2019-06-26 | 2020-12-30 | 株式会社ジャパンディスプレイ | 転写用基板 |
JP2021005632A (ja) * | 2019-06-26 | 2021-01-14 | 株式会社ジャパンディスプレイ | 転写用基板 |
JP7340365B2 (ja) | 2019-06-26 | 2023-09-07 | 株式会社ジャパンディスプレイ | 転写用基板 |
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CN104067381B (zh) | 2016-09-07 |
US9463613B2 (en) | 2016-10-11 |
BR112014011849A2 (pt) | 2017-05-02 |
US11552046B2 (en) | 2023-01-10 |
BR112014011849B1 (pt) | 2020-12-15 |
CN104067381A (zh) | 2014-09-24 |
WO2013074373A1 (en) | 2013-05-23 |
KR20140109890A (ko) | 2014-09-16 |
US8349116B1 (en) | 2013-01-08 |
MX2014006030A (es) | 2015-01-16 |
US20200219840A1 (en) | 2020-07-09 |
US20230120136A1 (en) | 2023-04-20 |
MX362327B (es) | 2019-01-11 |
TW201331110A (zh) | 2013-08-01 |
US20140290867A1 (en) | 2014-10-02 |
JP5783481B2 (ja) | 2015-09-24 |
US8789573B2 (en) | 2014-07-29 |
US10607961B2 (en) | 2020-03-31 |
US20190096846A1 (en) | 2019-03-28 |
EP2780936A4 (en) | 2015-07-29 |
US20170018613A1 (en) | 2017-01-19 |
AU2012339941A1 (en) | 2014-06-05 |
EP2780936A1 (en) | 2014-09-24 |
US10121864B2 (en) | 2018-11-06 |
US20130126098A1 (en) | 2013-05-23 |
KR101585818B1 (ko) | 2016-01-14 |
TWI579221B (zh) | 2017-04-21 |
AU2012339941B2 (en) | 2014-11-13 |
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