WO2004066409A1 - sERKAPSELUNG FÜR EIN ORGANISCHES ELEKTRONIKBAUTEIL UND HERSTELLUNGSVERFAHREN DAZU - Google Patents
sERKAPSELUNG FÜR EIN ORGANISCHES ELEKTRONIKBAUTEIL UND HERSTELLUNGSVERFAHREN DAZU Download PDFInfo
- Publication number
- WO2004066409A1 WO2004066409A1 PCT/EP2004/000429 EP2004000429W WO2004066409A1 WO 2004066409 A1 WO2004066409 A1 WO 2004066409A1 EP 2004000429 W EP2004000429 W EP 2004000429W WO 2004066409 A1 WO2004066409 A1 WO 2004066409A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- encapsulation
- electronic component
- melt
- alloy
- alloys
- Prior art date
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000007639 printing Methods 0.000 claims abstract description 9
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 5
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 239000000155 melt Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910000743 fusible alloy Inorganic materials 0.000 abstract description 14
- 238000002844 melting Methods 0.000 abstract description 14
- 230000008018 melting Effects 0.000 abstract description 13
- 238000000576 coating method Methods 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 238000007649 pad printing Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Definitions
- the invention relates to an encapsulation for an organic electronic component, in particular an encapsulation for an organic light emitting diode (OLED).
- OLED organic light emitting diode
- OLEDs based on OLEDs have been known since 1987. Compared to the conventional liquid crystal displays, the OLEDs offer several advantages such as self-emission, low energy consumption, compactness and short switching times.
- an OLED is made up of organic films that are arranged between electrodes. As soon as voltage is applied to the electrodes, light is emitted because holes recombine with electrons.
- the thin organic layers of the OLED are typically arranged on a glass substrate and encapsulated with a further glass or metal plate.
- attempts are also being made to replace the rigid glass or metal plates with those made of plastic.
- hermetic sealing of the inner layers of an OLED from moisture and oxygen is essential, so it is not easy to find a replacement for the materials glass or metal.
- plastic encapsulation with an applied protective layer being used.
- Plastic layers made of dielectric layers that are up to 1 ⁇ m thick are also used. However, these encapsulations are not necessarily to be classified as flexible.
- An essential point with all encapsulations is the tightness against moisture, especially water and oxi gases, especially oxygen.
- Organic materials generally have a relatively high permeability to moisture, metals and technical ceramics have a high degree of tightness against these environmental influences, but firstly it is difficult to draw a metallic film over an organic electronic component without damaging the component itself and secondly Conventional metal layers, which were applied via CVD or the like, have a relatively high number of “pinholes” through which moisture and oxygen can diffuse through.
- the invention relates to an encapsulation for an electronic component, in particular for an OLED, which can essentially be produced from the melt of a metallic alloy.
- the invention also relates to a method for producing an encapsulation for an OLED by applying the melt of a metallic alloy.
- additives such as wetting agents, adhesion promoters or the like
- wetting agents such as wetting agents, adhesion promoters or the like
- low-melting alloys are, for example, the "fusible alloys' 1 *, ie metallic alloys that have a low melting point or melting range.
- hermetically sealed encapsulations for organic electronic components are created by conventional coating methods such as printing methods, “doctor-blading ⁇ ,” spin coating or “dip-coating ⁇ , because the low-melting metal alloys, the“ fusible alloys ”, are meltable at temperatures between 30 and 200 ° C. and hence how polymers can be processed, making it possible to produce a homogeneous and extensive coating as well as a structured layer.
- the melt is applied, preferably structured, by a printing process, such as stamp or pad printing, screen printing, ink jet printing, high and / or gravure printing, stencil printing, flexographic printing and others.
- a printing process such as stamp or pad printing, screen printing, ink jet printing, high and / or gravure printing, stencil printing, flexographic printing and others.
- the alloy of the "fusible alloy 1 " is applied by means of an embossing technique or like a casting resin.
- the melt can also be applied just as well by spin coating, immersion, knife coating, etc.
- the "fusible alloys” are by their nature is known, it is, for example, alloys educational a "eutectic ⁇ to, that is at a certain percentage by mole, weight or volume of distribution of the components in the alloy, the melting point decreases the alloy or a mixture well below that of the individual components
- the eutectic alloys also have the advantage that they have a defined melting point as opposed to a melting range which can possibly extend over 10 ° C. or more.
- alloys which are present as a melt in the range between 30 ° C. and 200 ° C., particularly preferably below 150 ° C.
- Components of these alloys can be the following metals: bismuth, lead, tin, cadmium, indium, mercury, silver.
- the “fusible alloy is characterized by the fact that its melting point is clearly, ie measurable in degrees Celsius, below that of the individual components ,
- the "fusible alloys" or alloys that are harmless to health are particularly advantageous, that is to say those which manage with little or no cadmium, mercury and / or lead.
- the following alloys may be mentioned as examples: 57% (weight percent) bismuth, 17% tin, 26 % Indium (melting point 78 ° C); 48% tin, 52% indium (melting point 118 ° C) or 58% bismuth, 42% tin (melting point 138 ° C).
- Another great advantage of the method is that these materials produce a homogeneous film with a low defect rate, in contrast to films that were produced using physical vapor deposition (PVD) or CVD.
- PVD physical vapor deposition
- an insulator layer is applied between the organic electronic component, in particular between the OLED and the encapsulation.
- the insulating intermediate layer can be, for example, an organic layer or a ceramic layer, such as made of SiO 2 .
- the insulating intermediate layer can be by evaporation, sputtering, chemical vapor deposition (CVD), "spin-coating" or by means of printing techniques.
- the melt is applied directly to the organic electronic component, in particular the OLED, so that it solidifies on the electronic component, advantageously in a controlled manner. This most strongly suppresses imperfections and pinholes. Only because of the melting range at low temperatures can this process be used for organic electronic components without damaging them.
- This form of encapsulation is particularly suitable for flexible use (with plastic films or thin glass) because the solidified, that is to say in the solid phase, “fusible alloys * alloys, preferably in the layer thickness in which they are present during the encapsulation, are flexible.
- the layer thicknesses of the encapsulations can be between 1 and 700 ⁇ m. Layer thicknesses between 20 and 200 ⁇ m are preferred, layer thicknesses between 30 and 70 ⁇ m are particularly preferred.
- the adhesion properties of the alloys on the substrate are very favorable, so that the transition from encapsulation to substrate can also be made relatively easily sealed.
- the encapsulation can be used for all organic electronic components, in particular for passive matrix displays, flexible light sources and or organic solar cells or organic photovoltaic cells. Other applications include flexible organic detectors and integrated circuits on an organic basis.
- An organic electronic component is built on a glass substrate.
- An insulating intermediate layer is applied thereon by means of a coating process such as "spin-coating" or the like.
- a thin film for example with a thickness of 50 ⁇ m, of a metallic, low-melting alloy, for example 48% tin and 52% indium, is applied thereon. The application can, because of the low
- encapsulation for an organic electronic component in particular an OLED
- OLED organic electronic component
- fusible alloys i.e. low-melting metal alloys that combine a low melting point with high tightness against moisture and oxidizing gases.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/542,978 US20060226419A1 (en) | 2003-01-21 | 2004-01-20 | Encapsulation for an organic electronics component and production method therefor |
JP2005518644A JP2006515716A (ja) | 2003-01-21 | 2004-01-20 | 有機電子素子のための封止体及び前記封止体の製造方法 |
EP04703393A EP1629547A1 (de) | 2003-01-21 | 2004-01-20 | Erkapselung für ein organisches elektronikbauteil und herstellungsverfahren dazu |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10302145 | 2003-01-21 | ||
DE10302145.0 | 2003-01-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004066409A1 true WO2004066409A1 (de) | 2004-08-05 |
Family
ID=32747466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2004/000429 WO2004066409A1 (de) | 2003-01-21 | 2004-01-20 | sERKAPSELUNG FÜR EIN ORGANISCHES ELEKTRONIKBAUTEIL UND HERSTELLUNGSVERFAHREN DAZU |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060226419A1 (de) |
EP (1) | EP1629547A1 (de) |
JP (1) | JP2006515716A (de) |
CN (1) | CN1742394A (de) |
WO (1) | WO2004066409A1 (de) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1770793A2 (de) * | 2005-09-30 | 2007-04-04 | Osram Opto Semiconductors GmbH | Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements |
DE102006015043A1 (de) * | 2006-03-31 | 2007-10-11 | Siemens Ag | Verfahren zum Verkapseln eines organischen photoaktiven Bauteils und Verkapselung eines photoaktiven elektronischen Bauteils |
DE102013106855A1 (de) * | 2013-07-01 | 2015-01-08 | Osram Oled Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements, optoelektronisches Bauelement und Verwendung einer flüssigen ersten Legierung zum Herstellen eines optoelektronischen Bauelements |
US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
US10121864B2 (en) | 2011-11-18 | 2018-11-06 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
US10297712B2 (en) | 2011-11-18 | 2019-05-21 | Apple Inc. | Micro LED display |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101108157B1 (ko) * | 2009-11-19 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
KR101604139B1 (ko) | 2009-11-30 | 2016-03-17 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치와 그 제조방법 |
EP2780954B1 (de) * | 2011-11-18 | 2019-10-16 | Apple Inc. | Verfahren zur bildung einer mikro-led-struktur |
JP2014007192A (ja) * | 2012-06-21 | 2014-01-16 | Industrial Technology Research Institute | Ledウェハーを接合する方法、ledチップを製造する方法及び接合構造 |
CN105097881A (zh) * | 2015-07-28 | 2015-11-25 | 合肥京东方光电科技有限公司 | 显示面板及其封装方法、显示装置 |
CN107623085B (zh) * | 2017-10-16 | 2019-12-10 | 深圳市华星光电半导体显示技术有限公司 | Oled面板的封装方法及封装结构 |
CN107785501B (zh) * | 2017-10-17 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | 柔性oled面板的封装方法及封装结构 |
CN108461652A (zh) * | 2018-03-30 | 2018-08-28 | 武汉华星光电半导体显示技术有限公司 | 封装体、显示装置及显示面板的封装方法 |
CN111114157B (zh) * | 2018-10-31 | 2022-03-01 | 北京梦之墨科技有限公司 | 一种柔版印刷方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997046052A1 (en) * | 1996-05-28 | 1997-12-04 | Philips Electronics N.V. | Organic electroluminescent device |
WO2001078151A2 (en) * | 2000-04-11 | 2001-10-18 | Rockwell Technologies, Llc | Patterning of polymer light emitting devices using electrochemical polymerization |
US20020079832A1 (en) * | 2000-12-22 | 2002-06-27 | Koninklijke Philips Electronics N.V. | Electroluminescent device and a method of manufacturing thereof |
-
2004
- 2004-01-20 CN CNA2004800025605A patent/CN1742394A/zh active Pending
- 2004-01-20 US US10/542,978 patent/US20060226419A1/en not_active Abandoned
- 2004-01-20 WO PCT/EP2004/000429 patent/WO2004066409A1/de not_active Application Discontinuation
- 2004-01-20 EP EP04703393A patent/EP1629547A1/de not_active Withdrawn
- 2004-01-20 JP JP2005518644A patent/JP2006515716A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997046052A1 (en) * | 1996-05-28 | 1997-12-04 | Philips Electronics N.V. | Organic electroluminescent device |
WO2001078151A2 (en) * | 2000-04-11 | 2001-10-18 | Rockwell Technologies, Llc | Patterning of polymer light emitting devices using electrochemical polymerization |
US20020079832A1 (en) * | 2000-12-22 | 2002-06-27 | Koninklijke Philips Electronics N.V. | Electroluminescent device and a method of manufacturing thereof |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1770793A2 (de) * | 2005-09-30 | 2007-04-04 | Osram Opto Semiconductors GmbH | Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements |
EP1770793A3 (de) * | 2005-09-30 | 2007-12-12 | Osram Opto Semiconductors GmbH | Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements |
US7679100B2 (en) | 2005-09-30 | 2010-03-16 | Osram Opto Semiconductors Gmbh | Housing for an electromagnetic radiation emitting optoelectronic component, component and method of making a housing or a component |
DE102006015043A1 (de) * | 2006-03-31 | 2007-10-11 | Siemens Ag | Verfahren zum Verkapseln eines organischen photoaktiven Bauteils und Verkapselung eines photoaktiven elektronischen Bauteils |
US10121864B2 (en) | 2011-11-18 | 2018-11-06 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
US10297712B2 (en) | 2011-11-18 | 2019-05-21 | Apple Inc. | Micro LED display |
US10607961B2 (en) | 2011-11-18 | 2020-03-31 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
US11552046B2 (en) | 2011-11-18 | 2023-01-10 | Apple Inc. | Micro device transfer head assembly |
DE102013106855B4 (de) * | 2013-07-01 | 2017-10-12 | Osram Oled Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement unter Verwendung einer flüssigen ersten Legierung |
US9831465B2 (en) | 2013-07-01 | 2017-11-28 | Osram Oled Gmbh | Optoelectronic component and method for producing same |
DE102013106855A1 (de) * | 2013-07-01 | 2015-01-08 | Osram Oled Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements, optoelektronisches Bauelement und Verwendung einer flüssigen ersten Legierung zum Herstellen eines optoelektronischen Bauelements |
Also Published As
Publication number | Publication date |
---|---|
US20060226419A1 (en) | 2006-10-12 |
JP2006515716A (ja) | 2006-06-01 |
CN1742394A (zh) | 2006-03-01 |
EP1629547A1 (de) | 2006-03-01 |
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