CN107154374B - 微转印方法 - Google Patents

微转印方法 Download PDF

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CN107154374B
CN107154374B CN201710370030.5A CN201710370030A CN107154374B CN 107154374 B CN107154374 B CN 107154374B CN 201710370030 A CN201710370030 A CN 201710370030A CN 107154374 B CN107154374 B CN 107154374B
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CN107154374A (zh
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陈黎暄
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TCL Huaxing Photoelectric Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2017/089264 priority patent/WO2018214204A1/zh
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Abstract

本发明提供一种微转印方法，利用传送头的拾取凸起吸附载体基板上的微部件后，将传送头与载体基板上下翻转，使所述传送头位于载体基板的下方；然后将传送头与载体基板分离，使传送头承载着被拾取凸起吸附的微部件；然后将承载有微部件的传送头转移到接受基板的上方，再将传送头上下翻转，将拾取凸起吸附的微部件置于接受基板上；本发明的微转印方法，在传送头转移微部件的过程中，微部件承载于传送头上，相对于现有技术，传送头对微部件的吸附不再需要克服重力的影响，继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。

Description

微转印方法
技术领域
本发明涉及显示技术领域，尤其涉及一种微转印方法。
背景技术
微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成MicroLED显示面板。其中，微转印Micro LED阵列的基本原理大致为：使用具有图案化的传送头(Transfer)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LEDbare chip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成Micro LED bare chip的转移，形成Micro LED阵列。
目前，来自爱尔兰的X-celeprint、美国德州大学等都曾发表过有关Micro LED显示器的研究成果。苹果公司于2014年正式收购具有Micro LED技术的LuxVue后，引发业界开始关注于Micro LED的技术优势，LuxVue与X-Celeprint所使用的微转移技术差别较大，X-Celeprint主要利用PDMS等膜层结构的吸附力进行转移动作，而LuxVue通过在传送头的凸起上通电，利用静电力来吸附Micro LED等器件。
不论采用何种方式进行吸附的Transfer，Transfer的转移良率和速度都是技术的关键点，在现有微转印方法的Transfer移动过程中，Transfer从提供零部件的衬底上吸附起例如LED、集成电路芯片(IC)等微米尺寸的零部件时，其实际是克服地球重力和衬底的吸附力，而在移动和转移的过程中，也时刻受到地球重力影响；假设Transfer移动速度较快，则可能导致在移动过程中Micro LED等器件从Transfer上脱落，而为了提高Transfer过程中的稳定性，则又可能牺牲Transfer的速度继而影响产能。
发明内容
本发明的目的在于提供一种微转印方法，可有效提高传送头的转移良率和速率。
为实现上述目的，本发明提供了一种微转印方法，包括如下步骤：
步骤S1、提供传送头、及载体基板，所述传送头具有数个拾取凸起，每一拾取凸起均具有吸附面，所述载体基板上设有数个微部件，将所述传送头放置于所述载体基板上，此时所述拾取凸起的吸附面朝向下方，使得所述拾取凸起的吸附面与载体基板上的微部件相接触，即利用所述传送头的拾取凸起吸附载体基板上的微部件；
步骤S2、将传送头与载体基板上下翻转，此时所述传送头位于所述载体基板的下方，所述拾取凸起的吸附面朝向上方，然后将传送头与载体基板分离，此时所述传送头承载着所述步骤S1中被拾取凸起吸附的微部件；
步骤S3、提供接受基板，将承载有微部件的传送头转移到所述接受基板的上方，然后将传送头上下翻转，此时所述传送头位于所述接受基板的上方，所述拾取凸起的吸附面朝向下方，将拾取凸起吸附的微部件置于接受基板上。
所述步骤S1中提供的传送头中，每一拾取凸起的吸附面上均设有挡墙。
每一拾取凸起上的挡墙均设于相应吸附面的至少一侧边上。
所述步骤S2中，每一拾取凸起上吸附的微部件的高度均大于该拾取凸起上挡墙的高度。
所述传送头上的挡墙通过光刻制程制作形成。
所述微部件为微发光二极管。
所述微部件具有金属电极，所述步骤S3中提供的接受基板为TFT阵列基板。
所述步骤S3还包括将微部件的金属电极与接受基板导通，并使得所述微部件固定于所述接受基板上。
所述微部件为微集成电路芯片。
所述传送头为PDMS传送头，所述拾取凸起为PDMS材料，所述步骤S1中通过拾取凸起的粘性吸附微部件。
本发明的有益效果：本发明提供了一种微转印方法，利用传送头的拾取凸起吸附载体基板上的微部件后，将传送头与载体基板上下翻转，使所述传送头位于载体基板的下方；然后将传送头与载体基板分离，使传送头承载着被拾取凸起吸附的微部件；然后将承载有微部件的传送头转移到接受基板的上方，再将传送头上下翻转，将拾取凸起吸附的微部件置于接受基板上；本发明的微转印方法，在传送头转移微部件的过程中，微部件承载于传送头上，相对于现有技术，传送头对微部件的吸附不再需要克服重力的影响，继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的微转印方法的流程示意图；
图2-3为本发明的微转印方法的步骤S1的示意图；
图4-6为本发明的微转印方法的步骤S2的示意图；
图7-9为本发明的微转印方法的步骤S3的示意图；
图10为本发明的微转印方法中传送头上一拾取凸起的放大示意图；
图11为本发明的微转印方法的步骤S3中传送头转移微器件时对应一拾取凸起处的示意图；
图12为本发明的微转印方法中一拾取凸起上挡墙设于相应吸附面的相对两侧边上的示意图；
图13为本发明的微转印方法中一拾取凸起上挡墙设于相应吸附面的四周侧边上的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种微转印方法，包括如下步骤：
步骤S1、如图2-3所示，提供传送头50、及载体基板10，所述传送头50具有数个拾取凸起51，每一拾取凸起51均具有吸附面511，所述载体基板10上设有数个微部件40，将所述传送头50放置于所述载体基板10上，此时所述拾取凸起51的吸附面511朝向下方，使得所述拾取凸起51的吸附面511与载体基板10上的微部件40相接触，即利用所述传送头50的拾取凸起51吸附载体基板10上的微部件40。
步骤S2、如图4-6所示，将传送头50与载体基板10上下翻转，此时所述传送头50位于所述载体基板10的下方，所述拾取凸起51的吸附面511朝向上方，然后将传送头50与载体基板10分离，此时所述传送头50承载着所述步骤S1中被拾取凸起51吸附的微部件40。
步骤S3、如图7-9所示，提供接受基板20，将承载有微部件40的传送头50转移到所述接受基板20的上方，然后将传送头50上下翻转，此时所述传送头50位于所述接受基板20的上方，所述拾取凸起51的吸附面511朝向下方，将拾取凸起51吸附的微部件40置于接受基板20上。
本发明的微转印方法，在传送头50转移微部件40的过程中，微部件40承载于传送头50上，相对于现有技术，传送头50对微部件40的吸附不再需要克服重力的影响，继而在步骤S3中，在保证传送头50对微部件40稳定转移的情况下，可以对传送头50进行快速移动，有效提高了传送头50的转移良率和速率。
具体地，每一拾取凸起51的吸附面511的尺寸均大于其所吸附的微部件40的尺寸，如图10所示，所述步骤S1中提供的传送头50中，每一拾取凸起51的吸附面511的边缘上均设有挡墙512，从而在传送头50对微部件40转移过程中，即使微部件40发生偶尔的晃动，由于挡墙512的阻挡作用，微部件40也不会从拾取凸起51上脱落。
进一步地，每一拾取凸起51上的挡墙512可设于相应吸附面511四侧边中的某一边上、某两边上、某三边上、或是四周侧边上；例如，如图12所示，每一拾取凸起51上的挡墙512设于相应吸附面511的相对两侧边上；又例如，如图13所示，每一拾取凸起51上的挡墙512设于相应吸附面511的四周侧边上，从而形成可包围微部件40的结构。
具体地，所述传送头50上的挡墙512通过光刻制程在传送头50成型过程中制作形成。
具体地，如图11所示，所述步骤S2中，每一拾取凸起51上吸附的微部件40的高度均大于该拾取凸起51上挡墙512的高度；从而在所述步骤S3中，将传送头50上下翻转后，挡墙512不会阻碍微部件40放置在接受基板20上，进而避免影响微部件40与接受基板20的绑定(Bonding)。
具体地，所述微部件40为微发光二极管，具有金属电极41，所述步骤S3中提供的接受基板20为TFT阵列基板。进一步地，所述步骤S3还包括将微部件40的金属电极41与接受基板20导通，并使得所述微部件40固定于所述接受基板20上，即将微部件40也即微发光二极管与接受基板20进行绑定。
除此之外，所述微部件40也可以为其他微米尺寸或更小尺寸的器件，例如微集成电路芯片。
具体地，所述传送头50为PDMS传送头，所述拾取凸起51为PDMS材料，所述步骤S1中通过拾取凸起51的粘性吸附微部件40。除此之外，所述传送头50还可以为其他类型的传送头，比如通过静电力来进行拾取的传送头。
综上所述，本发明提供了一种微转印方法，利用传送头的拾取凸起吸附载体基板上的微部件后，将传送头与载体基板上下翻转，使所述传送头位于载体基板的下方；然后将传送头与载体基板分离，使传送头承载着被拾取凸起吸附的微部件；然后将承载有微部件的传送头转移到接受基板的上方，再将传送头上下翻转，将拾取凸起吸附的微部件置于接受基板上；本发明的微转印方法，在传送头转移微部件的过程中，微部件承载于传送头上，相对于现有技术，传送头对微部件的吸附不再需要克服重力的影响，继而在保证传送头对微部件稳定转移的情况下，可以对传送头进行快速移动，有效提高了传送头的转移良率和速率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种微转印方法，包括如下步骤：
步骤S1、提供传送头(50)、及载体基板(10)，所述传送头(50)具有数个拾取凸起(51)，每一拾取凸起(51)均具有吸附面(511)，所述载体基板(10)上设有数个微部件(40)，将所述传送头(50)放置于所述载体基板(10)上，此时所述拾取凸起(51)的吸附面(511)朝向下方，使得所述拾取凸起(51)的吸附面(511)与载体基板(10)上的微部件(40)相接触，即利用所述传送头(50)的拾取凸起(51)吸附载体基板(10)上的微部件(40)；
其特征在于，包括如下步骤：
步骤S2、将传送头(50)与载体基板(10)上下翻转，此时所述传送头(50)位于所述载体基板(10)的下方，所述拾取凸起(51)的吸附面(511)朝向上方，然后将传送头(50)与载体基板(10)分离，此时所述传送头(50)承载着所述步骤S1中被拾取凸起(51)吸附的微部件(40)；
步骤S3、提供接受基板(20)，将承载有微部件(40)的传送头(50)转移到所述接受基板(20)的上方，然后将传送头(50)上下翻转，此时所述传送头(50)位于所述接受基板(20)的上方，所述拾取凸起(51)的吸附面(511)朝向下方，将拾取凸起(51)吸附的微部件(40)置于接受基板(20)上。
2.如权利要求1所述的微转印方法，其特征在于，所述步骤S1中提供的传送头(50)中，每一拾取凸起(51)的吸附面(511)上均设有挡墙(512)。
3.如权利要求2所述的微转印方法，其特征在于，每一拾取凸起(51)上的挡墙(512)均设于相应吸附面(511)的至少一侧边上。
4.如权利要求2所述的微转印方法，其特征在于，所述步骤S2中，每一拾取凸起(51)上吸附的微部件(40)的高度均大于该拾取凸起(51)上挡墙(512)的高度。
5.如权利要求2所述的微转印方法，其特征在于，所述传送头(50)上的挡墙(512)通过光刻制程制作形成。
6.如权利要求1所述的微转印方法，其特征在于，所述微部件(40)为微发光二极管。
7.如权利要求6所述的微转印方法，其特征在于，所述微部件(40)具有金属电极(41)，所述步骤S3中提供的接受基板(20)为TFT阵列基板。
8.如权利要求7所述的微转印方法，其特征在于，所述步骤S3还包括将微部件(40)的金属电极(41)与接受基板(20)导通，并使得所述微部件(40)固定于所述接受基板(20)上。
9.如权利要求1所述的微转印方法，其特征在于，所述微部件(40)为微集成电路芯片。
10.如权利要求1所述的微转印方法，其特征在于，所述传送头(50)为PDMS传送头，所述拾取凸起(51)为PDMS材料，所述步骤S1中通过拾取凸起(51)的粘性吸附微部件(40)。
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