JP2012160720A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
- Publication number
- JP2012160720A JP2012160720A JP2012001840A JP2012001840A JP2012160720A JP 2012160720 A JP2012160720 A JP 2012160720A JP 2012001840 A JP2012001840 A JP 2012001840A JP 2012001840 A JP2012001840 A JP 2012001840A JP 2012160720 A JP2012160720 A JP 2012160720A
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- film
- oxide
- insulating film
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 603
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 179
- 239000001301 oxygen Substances 0.000 claims abstract description 179
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 179
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 238000010438 heat treatment Methods 0.000 claims abstract description 105
- 230000001681 protective effect Effects 0.000 claims abstract description 74
- 239000001257 hydrogen Substances 0.000 claims abstract description 59
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 59
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 112
- 239000002019 doping agent Substances 0.000 claims description 85
- 125000004429 atom Chemical group 0.000 claims description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 28
- 230000005684 electric field Effects 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 150000002431 hydrogen Chemical class 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 229910052734 helium Inorganic materials 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052743 krypton Inorganic materials 0.000 claims description 8
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052754 neon Inorganic materials 0.000 claims description 8
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052724 xenon Inorganic materials 0.000 claims description 8
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 40
- 238000009413 insulation Methods 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 759
- 239000004973 liquid crystal related substance Substances 0.000 description 88
- 239000010410 layer Substances 0.000 description 43
- 239000003990 capacitor Substances 0.000 description 34
- 229910044991 metal oxide Inorganic materials 0.000 description 31
- 150000004706 metal oxides Chemical class 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 30
- 239000000463 material Substances 0.000 description 30
- 230000006870 function Effects 0.000 description 29
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 28
- 239000007789 gas Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 25
- 229910007541 Zn O Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 23
- 238000004544 sputter deposition Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000012298 atmosphere Substances 0.000 description 17
- 125000004430 oxygen atom Chemical group O* 0.000 description 17
- 239000010936 titanium Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 229910052719 titanium Inorganic materials 0.000 description 15
- 238000003795 desorption Methods 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 239000011787 zinc oxide Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 239000011651 chromium Substances 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 239000002156 adsorbate Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- 206010021143 Hypoxia Diseases 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 101001047514 Bos taurus Lethal(2) giant larvae protein homolog 1 Proteins 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- -1 copper-magnesium-aluminum Chemical compound 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 3
- 238000012821 model calculation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052696 pnictogen Inorganic materials 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000003098 cholesteric effect Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical group [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 239000005264 High molar mass liquid crystal Substances 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 241001591005 Siga Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000004698 pseudo-potential method Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Liquid Crystal (AREA)
- Non-Volatile Memory (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】基板上に第1の酸化絶縁膜を形成し、該第1の酸化絶縁膜上に第1の酸化物半導体膜を形成した後、加熱処理を行い、第1の酸化物半導体膜に含まれる水素を脱離させつつ、第1の酸化絶縁膜に含まれる酸素の一部を第1の酸化物半導体膜に拡散させ、水素濃度及び酸素欠陥を低減させた第2の酸化物半導体膜を形成する。次に、第2の酸化物半導体膜を選択的にエッチングして、第3の酸化物半導体膜を形成した後、第2の酸化絶縁膜を形成して、当該第2の酸化絶縁膜を選択的にエッチングして、第3の酸化物半導体膜の端部を覆う保護膜を形成する。この後、第3の酸化物半導体膜及び保護膜上に一対の電極、ゲート絶縁膜、及びゲート電極を形成する。
【選択図】図1
Description
本実施の形態では、リーク電流の低減が可能なトランジスタの構造及び作製方法について、図1乃至図3を用いて説明する。
本実施の形態では、実施の形態1と異なる作製方法により、図1に示すトランジスタを作製する方法について、図3及び図4を用いて説明する。
本実施の形態では、実施の形態1及び実施の形態2と異なるトランジスタの作製方法について、図3、図5及び図6を用いて説明する。ここでは、実施の形態1に示すトランジスタの作製方法の別形態として説明するが、実施の形態2を適宜適用することができる。なお、図6は、絶縁膜145の作製工程における上面図であり、図5(A)は図6の一点鎖線A−Bの断面図に相当する。
本実施の形態では、実施の形態1及び実施の形態2と異なる構造のトランジスタの構造及び作製方法について、図2、図3、図7、及び図8を用いて説明する。ここでは、実施の形態1に示すトランジスタの作製方法の別形態として説明するが、実施の形態2に適宜適用することができる。
本実施の形態では、実施の形態1乃至実施の形態4と異なる構造のトランジスタ及びその作製方法について、図9乃至図11を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態5と異なる構造のトランジスタについて、図12を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態6と異なる保護膜の作製方法について、図13を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態7に示す酸化物半導体膜103、192にCAAC酸化物半導体を用いて形成する方法について、説明する。なお、ここでは酸化物半導体膜103を用いて説明する。
図14(A)に半導体装置を構成する記憶素子(以下、メモリセルとも記す)の回路図の一例を示す。メモリセルは、酸化物半導体以外の材料(例えば、シリコン、ゲルマニウム、炭化シリコン、ガリウムヒ素、窒化ガリウム、有機化合物など)をチャネル形成領域に用いたトランジスタ1160と酸化物半導体をチャネル形成領域に用いたトランジスタ1162によって構成される。
本実施の形態では、容量素子を有するメモリセルの回路図の一例を示す。図16(A)に示すメモリセル1170は、第1の配線SL、第2の配線BL、第3の配線S1、第4の配線S2と、第5の配線WLと、トランジスタ1171(第1のトランジスタ)と、トランジスタ1172(第2のトランジスタ)と、容量素子1173とから構成されている。トランジスタ1171は、酸化物半導体以外の材料をチャネル形成領域に用いており、トランジスタ1172はチャネル形成領域に酸化物半導体を用いている。
本実施の形態では、先の実施の形態に示すトランジスタを用いた半導体装置の例について、図17を参照して説明する。
酸化物半導体をチャネル形成領域に用いたトランジスタを少なくとも一部に用いてCPU(Central Processing Unit)を構成することができる。
実施の形態1乃至実施の形態8で例示したトランジスタを用いた表示装置の一形態を図19に示す。
Claims (21)
- 基板上に第1の酸化絶縁膜を形成し、
前記第1の酸化絶縁膜上に第1の酸化物半導体膜を形成した後、加熱処理を行って第2の酸化物半導体膜を形成し、
前記第2の酸化物半導体膜を選択的にエッチングして、第3の酸化物半導体膜を形成した後、前記第3の酸化物半導体膜上に第2の酸化絶縁膜を形成し、
前記第2の酸化絶縁膜を選択的にエッチングして、前記第3の酸化物半導体膜の端部を覆う保護膜を形成し、
前記保護膜及び前記第3の酸化物半導体膜に接する一対の配線を形成し、
前記第3の酸化物半導体膜、前記保護膜、及び一対の配線を覆うゲート絶縁膜を形成し、
前記ゲート絶縁膜上に前記第3の酸化物半導体膜と重畳するゲート電極を形成することを特徴とする半導体装置の作製方法。 - 基板上に第1の酸化絶縁膜を形成し、
前記第1の酸化絶縁膜上に第1の酸化物半導体膜を形成し、
前記第1の酸化物半導体膜を選択的にエッチングして、第2の酸化物半導体膜を形成した後、前記第2の酸化物半導体膜上に第2の酸化絶縁膜を形成し、加熱処理を行って第3の酸化物半導体膜を形成し、
前記第2の酸化絶縁膜を選択的にエッチングして、前記第3の酸化物半導体膜の端部を覆う保護膜を形成し、
前記保護膜及び前記第3の酸化物半導体膜に接する一対の配線を形成し、
前記第3の酸化物半導体膜、前記保護膜、及び一対の配線を覆うゲート絶縁膜を形成し、
前記ゲート絶縁膜上に前記第3の酸化物半導体膜と重畳するゲート電極を形成することを特徴とする半導体装置の作製方法。 - 基板上に第1の酸化絶縁膜を形成し、
前記第1の酸化絶縁膜上に第1の酸化物半導体膜を形成した後、加熱処理を行って第2の酸化物半導体膜を形成し、
前記第2の酸化物半導体膜を選択的にエッチングして、第3の酸化物半導体膜を形成した後、前記第3の酸化物半導体膜上に第2の酸化絶縁膜を形成し、
前記第2の酸化絶縁膜を選択的にエッチングして、一対の開口部を有する第3の酸化絶縁膜を形成し、
前記一対の開口部を有する第3の酸化絶縁膜及び前記第3の酸化物半導体膜に接する一対の配線を形成した後、前記一対の開口部を有する第3の酸化絶縁膜を選択的にエッチングして、前記第3の酸化物半導体膜の端部を覆う保護膜を形成し、
前記第3の酸化物半導体膜、前記保護膜、及び一対の配線を覆うゲート絶縁膜を形成し、
前記ゲート絶縁膜上に前記第3の酸化物半導体膜と重畳するゲート電極を形成することを特徴とする半導体装置の作製方法。 - 基板上に第1の酸化絶縁膜を形成し、
前記第1の酸化絶縁膜上に第1の酸化物半導体膜を形成し、
前記第1の酸化物半導体膜を選択的にエッチングして、第2の酸化物半導体膜を形成した後、前記第2の酸化物半導体膜上に第2の酸化絶縁膜を形成し、加熱処理を行って第3の酸化物半導体膜を形成し、
前記第2の酸化絶縁膜を選択的にエッチングして、一対の開口部を有する第3の酸化絶縁膜を形成し、
前記一対の開口部を有する第3の酸化絶縁膜及び前記第3の酸化物半導体膜に接する一対の配線を形成した後、前記一対の開口部を有する第3の酸化絶縁膜を選択的にエッチングして、前記第3の酸化物半導体膜の端部を覆う保護膜を形成し、
前記第3の酸化物半導体膜、前記保護膜、及び一対の配線を覆うゲート絶縁膜を形成し、
前記ゲート絶縁膜上に前記第3の酸化物半導体膜と重畳するゲート電極を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一項において、
前記ゲート電極を形成した後、前記第3の酸化物半導体膜にドーパントを添加し、加熱して、前記ゲート電極と重畳する第1の酸化物半導体領域、前記第1の酸化物半導体領域を挟む一対の第2の酸化物半導体領域、及び前記一対の配線と重畳し、且つ前記第2の酸化物半導体領域を挟む一対の第3の酸化物半導体領域を形成することを特徴とする半導体装置の作製方法。 - 請求項5において、
前記第2の酸化物半導体領域は、前記ドーパントを含む領域であり、前記ドーパントは、窒素、リン、砒素、水素、ヘリウム、ネオン、アルゴン、クリプトン、キセノンの少なくともいずれか一以上であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項6のいずれか一項において、前記第1の酸化絶縁膜及び前記第2の酸化絶縁膜として、加熱により酸素の一部が脱離する酸化絶縁膜を形成することを特徴とする半導体装置の作製方法。
- 請求項1乃至請求項6のいずれか一項において、前記第1の酸化絶縁膜及び前記第2の酸化絶縁膜として、化学量論比を満たす酸素よりも多くの酸素を含む酸化絶縁膜を形成することを特徴とする半導体装置の作製方法。
- 請求項1または請求項3において、前記加熱処理は、前記第1の酸化物半導体膜から水素を脱離させると共に、前記第1の酸化絶縁膜に含まれる酸素を前記第1の酸化物半導体膜に拡散させ、前記第2の酸化物半導体膜を形成する温度で加熱することを特徴とする半導体装置の作製方法。
- 請求項2または請求項4において、前記加熱処理は、前記第2の酸化物半導体膜から水素を脱離させると共に、前記第1の酸化絶縁膜及び前記第2の酸化絶縁膜に含まれる酸素を前記第2の酸化物半導体膜に拡散させ、前記第3の酸化物半導体膜を形成する温度で加熱することを特徴とする半導体装置の作製方法。
- 請求項1乃至請求項10のいずれか一項において、前記加熱処理は、150℃以上前記基板の歪み点未満であることを特徴とする半導体装置の作製方法。
- 請求項1乃至請求項12のいずれか一項において、前記第1の酸化物半導体膜乃至前記第3の酸化物半導体膜が、In、Ga、SnおよびZnから選ばれた一種以上の元素を含むことを特徴とする半導体装置の作製方法。
- 絶縁表面上に形成される酸化絶縁膜と、
前記酸化絶縁膜上に形成される酸化物半導体膜と、
前記酸化物半導体膜の端部を覆う保護膜と、
前記保護膜及び前記酸化物半導体膜に接する一対の配線と、
前記酸化物半導体膜及び前記一対の配線に接するゲート絶縁膜と、
前記ゲート絶縁膜を介して、前記酸化物半導体膜と重畳するゲート電極と、を有することを特徴とする半導体装置。 - 請求項13において、前記酸化物半導体膜は、非単結晶であり、かつc軸配向の結晶領域を有することを特徴とする半導体装置。
- 請求項13または請求項14において、前記酸化物半導体膜は、前記ゲート電極と重畳する第1の酸化物半導体領域、前記第1の酸化物半導体領域を挟む一対の第2の酸化物半導体領域、及び前記一対の配線と重畳し、且つ前記第2の酸化物半導体領域を挟む一対の第3の酸化物半導体領域を有することを特徴とする半導体装置。
- 請求項15において、
前記第1の酸化物半導体領域はチャネル領域であり、
前記一対の第2の酸化物半導体領域は、電界緩和領域であり、
前記一対の第3の酸化物半導体領域は、ソース領域及びドレイン領域であることを特徴とする半導体装置。 - 請求項15または請求項16において、
前記一対の第2の酸化物半導体領域には、窒素、リン、又は砒素の少なくともいずれか一以上の元素が、5×1018atoms/cm3以上1×1022atoms/cm3以下含まれていることを特徴とする半導体装置。 - 請求項15乃至請求項17のいずれか一項において、
前記一対の第2の酸化物半導体領域には、水素、ヘリウム、ネオン、アルゴン、クリプトン、キセノンの少なくともいずれか一以上のドーパントが、5×1018atoms/cm3以上1×1022atoms/cm3以下含まれていることを特徴とする半導体装置。 - 請求項13乃至請求項18のいずれか一において、
前記酸化物半導体膜は、In、Ga、SnおよびZnから選ばれた一種以上の元素を含むことを特徴とする半導体装置。 - 請求項13乃至請求項19のいずれか一項において、前記酸化絶縁膜は、加熱により酸素の一部が脱離する酸化絶縁膜であることを特徴とする半導体装置。
- 請求項13乃至請求項19のいずれか一項において、前記酸化絶縁膜は、化学量論比を満たす酸素よりも多くの酸素を含む酸化絶縁膜であることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012001840A JP5836552B2 (ja) | 2011-01-12 | 2012-01-10 | 半導体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011004423 | 2011-01-12 | ||
JP2011004423 | 2011-01-12 | ||
JP2012001840A JP5836552B2 (ja) | 2011-01-12 | 2012-01-10 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015216220A Division JP2016028455A (ja) | 2011-01-12 | 2015-11-03 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012160720A true JP2012160720A (ja) | 2012-08-23 |
JP2012160720A5 JP2012160720A5 (ja) | 2014-11-27 |
JP5836552B2 JP5836552B2 (ja) | 2015-12-24 |
Family
ID=46454569
Family Applications (10)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012001840A Expired - Fee Related JP5836552B2 (ja) | 2011-01-12 | 2012-01-10 | 半導体装置 |
JP2015216220A Withdrawn JP2016028455A (ja) | 2011-01-12 | 2015-11-03 | 半導体装置 |
JP2017162000A Active JP6411600B2 (ja) | 2011-01-12 | 2017-08-25 | 半導体装置 |
JP2018179687A Expired - Fee Related JP6613354B2 (ja) | 2011-01-12 | 2018-09-26 | 半導体装置の作製方法 |
JP2019150882A Active JP6644942B2 (ja) | 2011-01-12 | 2019-08-21 | 半導体装置 |
JP2019185067A Active JP6726347B2 (ja) | 2011-01-12 | 2019-10-08 | 半導体装置 |
JP2020070278A Active JP6781353B2 (ja) | 2011-01-12 | 2020-04-09 | 半導体装置 |
JP2020173762A Withdrawn JP2021013036A (ja) | 2011-01-12 | 2020-10-15 | トランジスタ及び半導体装置 |
JP2021100078A Active JP7033687B2 (ja) | 2011-01-12 | 2021-06-16 | トランジスタの作製方法 |
JP2022029093A Active JP7472181B2 (ja) | 2011-01-12 | 2022-02-28 | 半導体装置 |
Family Applications After (9)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015216220A Withdrawn JP2016028455A (ja) | 2011-01-12 | 2015-11-03 | 半導体装置 |
JP2017162000A Active JP6411600B2 (ja) | 2011-01-12 | 2017-08-25 | 半導体装置 |
JP2018179687A Expired - Fee Related JP6613354B2 (ja) | 2011-01-12 | 2018-09-26 | 半導体装置の作製方法 |
JP2019150882A Active JP6644942B2 (ja) | 2011-01-12 | 2019-08-21 | 半導体装置 |
JP2019185067A Active JP6726347B2 (ja) | 2011-01-12 | 2019-10-08 | 半導体装置 |
JP2020070278A Active JP6781353B2 (ja) | 2011-01-12 | 2020-04-09 | 半導体装置 |
JP2020173762A Withdrawn JP2021013036A (ja) | 2011-01-12 | 2020-10-15 | トランジスタ及び半導体装置 |
JP2021100078A Active JP7033687B2 (ja) | 2011-01-12 | 2021-06-16 | トランジスタの作製方法 |
JP2022029093A Active JP7472181B2 (ja) | 2011-01-12 | 2022-02-28 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (3) | US8785266B2 (ja) |
JP (10) | JP5836552B2 (ja) |
KR (1) | KR101940315B1 (ja) |
TW (1) | TWI570809B (ja) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014065301A1 (en) * | 2012-10-24 | 2014-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2014112657A (ja) * | 2012-10-17 | 2014-06-19 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の作製方法 |
KR20150022671A (ko) * | 2013-08-22 | 2015-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20150088728A (ko) * | 2014-01-24 | 2015-08-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2015179818A (ja) * | 2013-12-27 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置及び該半導体装置を用いた表示装置 |
JP2015228490A (ja) * | 2014-05-07 | 2015-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置および該半導体装置を有する電子機器 |
WO2017094644A1 (ja) * | 2015-11-30 | 2017-06-08 | シャープ株式会社 | 半導体基板及び表示装置 |
US9829533B2 (en) | 2013-03-06 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film and semiconductor device |
US10043660B2 (en) | 2016-05-20 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or display device including the same |
JP2018152445A (ja) * | 2017-03-13 | 2018-09-27 | 株式会社Joled | 半導体装置、表示装置および電子機器 |
JP2018170511A (ja) * | 2012-12-25 | 2018-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2018185397A (ja) * | 2017-04-25 | 2018-11-22 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
JP2019114814A (ja) * | 2013-12-27 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、及び半導体装置 |
JP2019114796A (ja) * | 2013-12-25 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2019187102A1 (ja) * | 2018-03-30 | 2019-10-03 | シャープ株式会社 | アクティブマトリクス基板、表示装置およびアクティブマトリクス基板の製造方法 |
JP2022133320A (ja) * | 2013-12-27 | 2022-09-13 | 株式会社半導体エネルギー研究所 | 発光装置 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8536571B2 (en) | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
TWI535032B (zh) | 2011-01-12 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
US8921948B2 (en) | 2011-01-12 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5982125B2 (ja) | 2011-01-12 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI570920B (zh) | 2011-01-26 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI787452B (zh) | 2011-01-26 | 2022-12-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8541781B2 (en) * | 2011-03-10 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9960278B2 (en) * | 2011-04-06 | 2018-05-01 | Yuhei Sato | Manufacturing method of semiconductor device |
US9105749B2 (en) | 2011-05-13 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9040981B2 (en) | 2012-01-20 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6168795B2 (ja) | 2012-03-14 | 2017-07-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP6001308B2 (ja) | 2012-04-17 | 2016-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6076612B2 (ja) | 2012-04-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9153699B2 (en) * | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
CN102790096A (zh) * | 2012-07-20 | 2012-11-21 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
US20150277168A1 (en) * | 2012-11-21 | 2015-10-01 | Sharp Kabushiki Kaisha | Display device |
US8901666B1 (en) * | 2013-07-30 | 2014-12-02 | Micron Technology, Inc. | Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures |
US9716003B2 (en) * | 2013-09-13 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
CN104409413B (zh) * | 2014-11-06 | 2017-12-08 | 京东方科技集团股份有限公司 | 阵列基板制备方法 |
JP2016100522A (ja) * | 2014-11-25 | 2016-05-30 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ及びその製造方法 |
CN105140290B (zh) * | 2015-06-26 | 2019-01-29 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管、阵列基板和液晶显示面板 |
US9871046B2 (en) * | 2016-02-24 | 2018-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | SRAM circuits with aligned gate electrodes |
US10942408B2 (en) | 2016-04-01 | 2021-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor, semiconductor device using the composite oxide semiconductor, and display device including the semiconductor device |
US10290710B2 (en) * | 2017-09-05 | 2019-05-14 | United Microelectronics Corp. | Semiconductor device and method for forming the same |
US11031579B2 (en) * | 2017-10-06 | 2021-06-08 | Lumileds Llc | Method of manufacturing an OLED device |
KR102537352B1 (ko) * | 2017-12-08 | 2023-05-25 | 엘지디스플레이 주식회사 | 도핑된 산화물 반도체층을 갖는 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
KR20200034083A (ko) * | 2018-09-20 | 2020-03-31 | 삼성디스플레이 주식회사 | 트랜지스터 기판, 이의 제조 방법, 및 이를 포함하는 표시 장치 |
CN109524401A (zh) * | 2018-10-08 | 2019-03-26 | 山东大学 | 一种基于氧化物半导体的高性能静态随机读取存储器及其制备方法 |
CN113169055B (zh) * | 2018-12-05 | 2023-08-08 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009135380A (ja) * | 2007-05-30 | 2009-06-18 | Canon Inc | 酸化物半導体を用いた薄膜トランジスタの製造方法および表示装置 |
JP2009167087A (ja) * | 2007-12-17 | 2009-07-30 | Fujifilm Corp | 無機結晶性配向膜及びその製造方法、半導体デバイス |
JP2010021520A (ja) * | 2008-07-08 | 2010-01-28 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ及びその製造方法、ならびに薄膜トランジスタを備える平板表示装置 |
JP2010080952A (ja) * | 2008-09-01 | 2010-04-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
JP2010114413A (ja) * | 2008-10-08 | 2010-05-20 | Sony Corp | 薄膜トランジスタおよび表示装置 |
JP2010219511A (ja) * | 2009-02-20 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 不揮発性半導体記憶装置およびその作製方法 |
Family Cites Families (194)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3520051A (en) * | 1967-05-01 | 1970-07-14 | Rca Corp | Stabilization of thin film transistors |
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
US5559344A (en) * | 1992-01-31 | 1996-09-24 | Hitachi, Ltd. | Thin-film semiconductor element, thin-film semiconductor device and methods of fabricating the same |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH06275832A (ja) * | 1993-03-18 | 1994-09-30 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
JP3298974B2 (ja) | 1993-03-23 | 2002-07-08 | 電子科学株式会社 | 昇温脱離ガス分析装置 |
JPH07115205A (ja) * | 1993-08-24 | 1995-05-02 | Fujitsu Ltd | 多結晶SiTFTの製造方法 |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
KR100394896B1 (ko) | 1995-08-03 | 2003-11-28 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 투명스위칭소자를포함하는반도체장치 |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
GB9613065D0 (en) * | 1996-06-21 | 1996-08-28 | Philips Electronics Nv | Electronic device manufacture |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
JP2001053167A (ja) * | 1999-08-04 | 2001-02-23 | Sony Corp | 半導体記憶装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
KR100307456B1 (ko) * | 1999-12-08 | 2001-10-17 | 김순택 | 박막 트랜지스터의 제조 방법 |
US6291255B1 (en) * | 2000-05-22 | 2001-09-18 | Industrial Technology Research Institute | TFT process with high transmittance |
TW501282B (en) | 2000-06-07 | 2002-09-01 | Semiconductor Energy Lab | Method of manufacturing semiconductor device |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
JP2003050405A (ja) * | 2000-11-15 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
KR100491141B1 (ko) * | 2001-03-02 | 2005-05-24 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그의 제조방법과 이를 이용한 액티브매트릭스형 표시소자 및 그의 제조방법 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4869509B2 (ja) * | 2001-07-17 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP3600229B2 (ja) * | 2001-10-31 | 2004-12-15 | 株式会社半導体エネルギー研究所 | 電界効果型トランジスタの製造方法 |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
JP4209619B2 (ja) * | 2002-02-28 | 2009-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
AU2003264480A1 (en) * | 2002-09-19 | 2004-04-08 | Sharp Kabushiki Kaisha | Variable resistance functional body and its manufacturing method |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
KR100528326B1 (ko) * | 2002-12-31 | 2005-11-15 | 삼성전자주식회사 | 가요성 기판 상에 보호캡을 구비하는 박막 반도체 소자 및 이를 이용하는 전자장치 및 그 제조방법 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
JP2005079283A (ja) * | 2003-08-29 | 2005-03-24 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法、電気光学装置、並びに電子機器 |
JP4451270B2 (ja) * | 2003-10-28 | 2010-04-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100611152B1 (ko) * | 2003-11-27 | 2006-08-09 | 삼성에스디아이 주식회사 | 평판표시장치 |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
KR100600878B1 (ko) * | 2004-06-29 | 2006-07-14 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조방법 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
EP1812969B1 (en) | 2004-11-10 | 2015-05-06 | Canon Kabushiki Kaisha | Field effect transistor comprising an amorphous oxide |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
JP4316558B2 (ja) * | 2005-06-28 | 2009-08-19 | 三星モバイルディスプレイ株式會社 | 有機発光表示装置 |
TWI401802B (zh) * | 2005-06-30 | 2013-07-11 | Samsung Display Co Ltd | 薄膜電晶體板及其製造方法 |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101117948B1 (ko) | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
JP5015470B2 (ja) * | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタ及びその製法 |
JP5015473B2 (ja) * | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタアレイ及びその製法 |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR101169058B1 (ko) * | 2006-03-10 | 2012-07-26 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 그 제조방법 |
JP5110803B2 (ja) | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
JP2007287451A (ja) * | 2006-04-14 | 2007-11-01 | Kochi Univ Of Technology | イオンをドーピングする装置、イオンをドーピングする方法、半導体装置の製法及び薄膜トランジスタの製法 |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
EP2259294B1 (en) | 2006-04-28 | 2017-10-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
JP5285235B2 (ja) * | 2006-04-28 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5128172B2 (ja) | 2006-04-28 | 2013-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN101356652B (zh) * | 2006-06-02 | 2012-04-18 | 日本财团法人高知县产业振兴中心 | 包括由氧化锌构成的氧化物半导体薄膜层的半导体器件及其制造方法 |
US20070287221A1 (en) * | 2006-06-12 | 2007-12-13 | Xerox Corporation | Fabrication process for crystalline zinc oxide semiconductor layer |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
KR100796609B1 (ko) * | 2006-08-17 | 2008-01-22 | 삼성에스디아이 주식회사 | Cmos 박막 트랜지스터의 제조방법 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
JP5090708B2 (ja) * | 2006-10-20 | 2012-12-05 | 株式会社ジャパンディスプレイイースト | 画像表示装置とその製造方法 |
JP2008134625A (ja) * | 2006-10-26 | 2008-06-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、表示装置及び電子機器 |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
WO2008069255A1 (en) | 2006-12-05 | 2008-06-12 | Canon Kabushiki Kaisha | Method for manufacturing thin film transistor using oxide semiconductor and display apparatus |
JP5305630B2 (ja) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
US8143115B2 (en) | 2006-12-05 | 2012-03-27 | Canon Kabushiki Kaisha | Method for manufacturing thin film transistor using oxide semiconductor and display apparatus |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR101312259B1 (ko) * | 2007-02-09 | 2013-09-25 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
US8581260B2 (en) * | 2007-02-22 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a memory |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US8158974B2 (en) * | 2007-03-23 | 2012-04-17 | Idemitsu Kosan Co., Ltd. | Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor |
JP5512930B2 (ja) * | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2008126492A1 (ja) * | 2007-04-05 | 2008-10-23 | Idemitsu Kosan Co., Ltd. | 電界効果型トランジスタ及び電界効果型トランジスタの製造方法 |
JP5197058B2 (ja) * | 2007-04-09 | 2013-05-15 | キヤノン株式会社 | 発光装置とその作製方法 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
US20080258423A1 (en) * | 2007-04-18 | 2008-10-23 | Yuan-Hsin Huang | Vertical-tube-fixing-base structure of the fork tube of the bike |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
US8274078B2 (en) | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
CN101681928B (zh) | 2007-05-31 | 2012-08-29 | 佳能株式会社 | 使用氧化物半导体的薄膜晶体管的制造方法 |
JP5324758B2 (ja) * | 2007-06-05 | 2013-10-23 | 三菱電機株式会社 | 薄膜トランジスタ、表示装置、およびその製造方法 |
JP2009071289A (ja) * | 2007-08-17 | 2009-04-02 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
CN101803031B (zh) * | 2007-09-18 | 2012-07-04 | 夏普株式会社 | 半导体装置的制造方法以及半导体装置 |
US8232598B2 (en) * | 2007-09-20 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
JP5354999B2 (ja) | 2007-09-26 | 2013-11-27 | キヤノン株式会社 | 電界効果型トランジスタの製造方法 |
JP5268132B2 (ja) * | 2007-10-30 | 2013-08-21 | 富士フイルム株式会社 | 酸化物半導体素子とその製造方法、薄膜センサおよび電気光学装置 |
JP2009135188A (ja) * | 2007-11-29 | 2009-06-18 | Sony Corp | 光センサーおよび表示装置 |
JP5332030B2 (ja) * | 2007-12-28 | 2013-11-06 | 大日本印刷株式会社 | 薄膜トランジスタ基板及びその製造方法 |
JP5264197B2 (ja) * | 2008-01-23 | 2013-08-14 | キヤノン株式会社 | 薄膜トランジスタ |
KR100965260B1 (ko) * | 2008-01-25 | 2010-06-22 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치 |
JP5467728B2 (ja) | 2008-03-14 | 2014-04-09 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびその製造方法 |
KR101496148B1 (ko) * | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
JP5306705B2 (ja) * | 2008-05-23 | 2013-10-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR100958006B1 (ko) * | 2008-06-18 | 2010-05-17 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP5519964B2 (ja) * | 2008-06-30 | 2014-06-11 | ユニバーサル・バイオ・リサーチ株式会社 | 遺伝子解析用基板 |
JP2010055070A (ja) * | 2008-07-30 | 2010-03-11 | Sumitomo Chemical Co Ltd | 表示装置および表示装置の製造方法 |
TWI495108B (zh) | 2008-07-31 | 2015-08-01 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
KR20110050580A (ko) * | 2008-08-04 | 2011-05-16 | 파나소닉 주식회사 | 플렉시블 반도체 장치 및 그 제조 방법 |
KR101533391B1 (ko) * | 2008-08-06 | 2015-07-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판과 그 제조 방법 |
SG159484A1 (en) * | 2008-09-05 | 2010-03-30 | Semiconductor Energy Lab | Method of manufacturing soi substrate |
JP5478166B2 (ja) * | 2008-09-11 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101681483B1 (ko) * | 2008-09-12 | 2016-12-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
KR101490148B1 (ko) | 2008-09-19 | 2015-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
WO2010035627A1 (en) | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP2010123758A (ja) | 2008-11-19 | 2010-06-03 | Nec Corp | 薄膜デバイス及びその製造方法 |
CN103456794B (zh) | 2008-12-19 | 2016-08-10 | 株式会社半导体能源研究所 | 晶体管的制造方法 |
JP2010205765A (ja) * | 2009-02-27 | 2010-09-16 | Toyama Univ | 自己整合半導体トランジスタの製造方法 |
KR101056428B1 (ko) * | 2009-03-27 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치 |
JP5669426B2 (ja) * | 2009-05-01 | 2015-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5760298B2 (ja) * | 2009-05-21 | 2015-08-05 | ソニー株式会社 | 薄膜トランジスタ、表示装置、および電子機器 |
JP2010283190A (ja) * | 2009-06-05 | 2010-12-16 | Konica Minolta Holdings Inc | 薄膜トランジスタ、及びその製造方法 |
JP5322787B2 (ja) * | 2009-06-11 | 2013-10-23 | 富士フイルム株式会社 | 薄膜トランジスタ及びその製造方法、電気光学装置、並びにセンサー |
JP5640478B2 (ja) * | 2009-07-09 | 2014-12-17 | 株式会社リコー | 電界効果型トランジスタの製造方法及び電界効果型トランジスタ |
WO2011013502A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011013523A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN102473734B (zh) | 2009-07-31 | 2015-08-12 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
CN103489871B (zh) | 2009-07-31 | 2016-03-23 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
KR102386147B1 (ko) | 2009-07-31 | 2022-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
KR101056229B1 (ko) * | 2009-10-12 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치 |
SG188112A1 (en) * | 2009-10-30 | 2013-03-28 | Semiconductor Energy Lab | Logic circuit and semiconductor device |
KR101652790B1 (ko) * | 2009-11-09 | 2016-08-31 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
JP5888990B2 (ja) | 2011-01-12 | 2016-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI535032B (zh) | 2011-01-12 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP5982125B2 (ja) | 2011-01-12 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8536571B2 (en) | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8921948B2 (en) | 2011-01-12 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
-
2012
- 2012-01-04 TW TW101100293A patent/TWI570809B/zh not_active IP Right Cessation
- 2012-01-09 US US13/345,940 patent/US8785266B2/en active Active
- 2012-01-10 JP JP2012001840A patent/JP5836552B2/ja not_active Expired - Fee Related
- 2012-01-11 KR KR1020120003386A patent/KR101940315B1/ko active IP Right Grant
-
2014
- 2014-06-05 US US14/296,837 patent/US9349752B2/en active Active
-
2015
- 2015-10-26 US US14/922,862 patent/US9882062B2/en active Active
- 2015-11-03 JP JP2015216220A patent/JP2016028455A/ja not_active Withdrawn
-
2017
- 2017-08-25 JP JP2017162000A patent/JP6411600B2/ja active Active
-
2018
- 2018-09-26 JP JP2018179687A patent/JP6613354B2/ja not_active Expired - Fee Related
-
2019
- 2019-08-21 JP JP2019150882A patent/JP6644942B2/ja active Active
- 2019-10-08 JP JP2019185067A patent/JP6726347B2/ja active Active
-
2020
- 2020-04-09 JP JP2020070278A patent/JP6781353B2/ja active Active
- 2020-10-15 JP JP2020173762A patent/JP2021013036A/ja not_active Withdrawn
-
2021
- 2021-06-16 JP JP2021100078A patent/JP7033687B2/ja active Active
-
2022
- 2022-02-28 JP JP2022029093A patent/JP7472181B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009135380A (ja) * | 2007-05-30 | 2009-06-18 | Canon Inc | 酸化物半導体を用いた薄膜トランジスタの製造方法および表示装置 |
JP2009167087A (ja) * | 2007-12-17 | 2009-07-30 | Fujifilm Corp | 無機結晶性配向膜及びその製造方法、半導体デバイス |
JP2010021520A (ja) * | 2008-07-08 | 2010-01-28 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ及びその製造方法、ならびに薄膜トランジスタを備える平板表示装置 |
JP2010080952A (ja) * | 2008-09-01 | 2010-04-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
JP2010114413A (ja) * | 2008-10-08 | 2010-05-20 | Sony Corp | 薄膜トランジスタおよび表示装置 |
JP2010219511A (ja) * | 2009-02-20 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 不揮発性半導体記憶装置およびその作製方法 |
Cited By (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014112657A (ja) * | 2012-10-17 | 2014-06-19 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の作製方法 |
WO2014065301A1 (en) * | 2012-10-24 | 2014-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9865743B2 (en) | 2012-10-24 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide layer surrounding oxide semiconductor layer |
JP2018170511A (ja) * | 2012-12-25 | 2018-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9829533B2 (en) | 2013-03-06 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film and semiconductor device |
KR20150022671A (ko) * | 2013-08-22 | 2015-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2015062220A (ja) * | 2013-08-22 | 2015-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102232133B1 (ko) * | 2013-08-22 | 2021-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2019114796A (ja) * | 2013-12-25 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102310399B1 (ko) | 2013-12-27 | 2021-10-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US10818795B2 (en) | 2013-12-27 | 2020-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102658554B1 (ko) * | 2013-12-27 | 2024-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
JP7373025B2 (ja) | 2013-12-27 | 2023-11-01 | 株式会社半導体エネルギー研究所 | 発光装置 |
US11757041B2 (en) | 2013-12-27 | 2023-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20230044323A (ko) * | 2013-12-27 | 2023-04-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
JP2022133320A (ja) * | 2013-12-27 | 2022-09-13 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP2019114814A (ja) * | 2013-12-27 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、及び半導体装置 |
JP2015179818A (ja) * | 2013-12-27 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置及び該半導体装置を用いた表示装置 |
US11380795B2 (en) | 2013-12-27 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor film |
KR20190119680A (ko) * | 2013-12-27 | 2019-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP7057458B2 (ja) | 2013-12-27 | 2022-04-19 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2020109866A (ja) * | 2013-12-27 | 2020-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2021106274A (ja) * | 2013-12-27 | 2021-07-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
KR20150088728A (ko) * | 2014-01-24 | 2015-08-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2015159280A (ja) * | 2014-01-24 | 2015-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10263117B2 (en) | 2014-01-24 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102306200B1 (ko) | 2014-01-24 | 2021-09-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2015228490A (ja) * | 2014-05-07 | 2015-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置および該半導体装置を有する電子機器 |
WO2017094644A1 (ja) * | 2015-11-30 | 2017-06-08 | シャープ株式会社 | 半導体基板及び表示装置 |
US10580641B2 (en) | 2016-05-20 | 2020-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or display device including the same |
US10043660B2 (en) | 2016-05-20 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or display device including the same |
JP2018152445A (ja) * | 2017-03-13 | 2018-09-27 | 株式会社Joled | 半導体装置、表示装置および電子機器 |
US11114568B2 (en) | 2017-04-25 | 2021-09-07 | Japan Display Inc. | Semiconductor device |
JP2018185397A (ja) * | 2017-04-25 | 2018-11-22 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
US11935967B2 (en) | 2017-04-25 | 2024-03-19 | Japan Display Inc. | Semiconductor device |
WO2019187102A1 (ja) * | 2018-03-30 | 2019-10-03 | シャープ株式会社 | アクティブマトリクス基板、表示装置およびアクティブマトリクス基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2021153194A (ja) | 2021-09-30 |
JP7033687B2 (ja) | 2022-03-10 |
JP2022063364A (ja) | 2022-04-21 |
JP6411600B2 (ja) | 2018-10-24 |
KR101940315B1 (ko) | 2019-01-18 |
TW201304014A (zh) | 2013-01-16 |
JP2019004180A (ja) | 2019-01-10 |
JP6781353B2 (ja) | 2020-11-04 |
US9882062B2 (en) | 2018-01-30 |
JP2019197928A (ja) | 2019-11-14 |
JP2016028455A (ja) | 2016-02-25 |
JP2020113794A (ja) | 2020-07-27 |
US20140284599A1 (en) | 2014-09-25 |
JP6613354B2 (ja) | 2019-11-27 |
JP6726347B2 (ja) | 2020-07-22 |
JP5836552B2 (ja) | 2015-12-24 |
JP7472181B2 (ja) | 2024-04-22 |
JP2018006764A (ja) | 2018-01-11 |
US8785266B2 (en) | 2014-07-22 |
US20120175609A1 (en) | 2012-07-12 |
US20160049519A1 (en) | 2016-02-18 |
US9349752B2 (en) | 2016-05-24 |
KR20120090781A (ko) | 2012-08-17 |
TWI570809B (zh) | 2017-02-11 |
JP2020017754A (ja) | 2020-01-30 |
JP6644942B2 (ja) | 2020-02-12 |
JP2021013036A (ja) | 2021-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7472181B2 (ja) | 半導体装置 | |
JP6232031B2 (ja) | 半導体装置の作製方法 | |
JP2024073476A (ja) | 半導体装置の作製方法 | |
KR101953912B1 (ko) | 반도체 장치 및 반도체 장치의 제작 방법 | |
JP2024091719A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141015 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141015 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151021 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151027 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151103 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5836552 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |