JP4316558B2 - 有機発光表示装置 - Google Patents
有機発光表示装置 Download PDFInfo
- Publication number
- JP4316558B2 JP4316558B2 JP2005339510A JP2005339510A JP4316558B2 JP 4316558 B2 JP4316558 B2 JP 4316558B2 JP 2005339510 A JP2005339510 A JP 2005339510A JP 2005339510 A JP2005339510 A JP 2005339510A JP 4316558 B2 JP4316558 B2 JP 4316558B2
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- Prior art keywords
- conductive substrate
- thin film
- film transistor
- insulating layer
- bias voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 183
- 239000010409 thin film Substances 0.000 claims description 107
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000005611 electricity Effects 0.000 description 10
- 230000003068 static effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000007715 excimer laser crystallization Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
Description
23、24…接地部、
101…基板露出部、
25、120…第1絶縁層、
26、130…半導体層、
27、140…第2絶縁層、
28、150…ゲート電極、
29、160…第3絶縁層、
30a、30b、160a、160b…ソース/ドレイン電極、
24、102…連結配線、
104…システム制御部、
104…コントローラー。
Claims (5)
- ステンレスまたはチタンよりなるフレキシブルな伝導性基板と、
前記伝導性基板上に形成される少なくとも一つの薄膜トランジスターと、
前記伝導性基板上に形成される少なくとも一つの絶縁層と、
前記絶縁層の中で少なくとも一層をとり除いて前記伝導性基板の少なくとも一領域を露出させる基板露出部と、
前記基板露出部に連結されて前記伝導性基板に、前記薄膜トランジスターがPMOSトランジスターの場合は負(−)のバックバイアス電圧を印加し、前記薄膜トランジスターがNMOSトランジスターの場合は正(+)のバックバイアス電圧を印加するシステム制御部と、を含むことを特徴とする有機発光表示装置。 - 前記基板下面に形成される絶縁層をさらに含むことを特徴とする請求項1に記載の有機発光表示装置。
- 前記基板露出部は、
前記伝導性基板の下面に形成される前記絶縁層の少なくとも一層の一領域を取り除くことで形成されることを特徴とする請求項2に記載の有機発光表示装置。 - 前記システム制御部は、
前記伝導性基板に印加される前記バックバイアス電圧を調節するコントローラーを含むことを特徴とする請求項1に記載の有機発光表示装置。 - 前記基板露出部は、
前記伝導性基板上に形成されたパッド部に形成されていることを特徴とする請求項1記載の有機発光表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050056540A KR100703473B1 (ko) | 2005-06-28 | 2005-06-28 | 평판표시장치 및 그 구동방법 |
KR1020050063846A KR100722094B1 (ko) | 2005-07-14 | 2005-07-14 | 반도체 장치 및 유기 발광 표시장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007011256A JP2007011256A (ja) | 2007-01-18 |
JP4316558B2 true JP4316558B2 (ja) | 2009-08-19 |
Family
ID=37566285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005339510A Active JP4316558B2 (ja) | 2005-06-28 | 2005-11-24 | 有機発光表示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7727823B2 (ja) |
JP (1) | JP4316558B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8047442B2 (en) * | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI570809B (zh) | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR101246692B1 (ko) * | 2011-07-14 | 2013-03-21 | 주식회사 한림포스텍 | 무선전력 통신시스템용 전력 전송장치 |
KR102013893B1 (ko) | 2012-08-20 | 2019-08-26 | 삼성디스플레이 주식회사 | 평판표시장치 및 그의 제조방법 |
JP2019152772A (ja) * | 2018-03-05 | 2019-09-12 | 株式会社Joled | 半導体装置および表示装置 |
KR20200064207A (ko) | 2018-11-28 | 2020-06-08 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20210156927A (ko) * | 2020-06-18 | 2021-12-28 | 삼성디스플레이 주식회사 | 표시장치 |
WO2022210918A1 (ja) | 2021-03-31 | 2022-10-06 | 日鉄ケミカル&マテリアル株式会社 | 可撓性ステンレス箔および可撓性発光デバイス |
Family Cites Families (20)
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KR950013784B1 (ko) * | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US6556257B2 (en) * | 1991-09-05 | 2003-04-29 | Sony Corporation | Liquid crystal display device |
JPH09179106A (ja) | 1995-12-21 | 1997-07-11 | Dainippon Printing Co Ltd | 薄型ディスプレイ用基板とこれを使用したフィルム液晶ディスプレイおよびフィールドエミッションディスプレイ |
JP3207760B2 (ja) | 1996-09-19 | 2001-09-10 | シャープ株式会社 | 半導体装置およびこれを用いた画像表示装置 |
JP3831028B2 (ja) | 1996-12-03 | 2006-10-11 | シチズン時計株式会社 | 液晶表示装置 |
JP4030200B2 (ja) * | 1998-09-17 | 2008-01-09 | 株式会社ルネサステクノロジ | 半導体パッケージおよびその製造方法 |
JP2000196102A (ja) | 1998-10-20 | 2000-07-14 | Citizen Watch Co Ltd | 半導体装置およびその製造方法 |
JP3454752B2 (ja) * | 1999-05-31 | 2003-10-06 | シャープ株式会社 | Soi半導体装置の安定化方法及びsoi半導体装置 |
KR100387122B1 (ko) | 2000-09-15 | 2003-06-12 | 피티플러스(주) | 백 바이어스 효과를 갖는 다결정 실리콘 박막 트랜지스터의 제조 방법 |
TW535137B (en) * | 2000-11-09 | 2003-06-01 | Toshiba Corp | Self-illuminating display device |
TW574753B (en) | 2001-04-13 | 2004-02-01 | Sony Corp | Manufacturing method of thin film apparatus and semiconductor device |
JP2003280034A (ja) | 2002-03-20 | 2003-10-02 | Sharp Corp | Tft基板およびそれを用いる液晶表示装置 |
US6642092B1 (en) * | 2002-07-11 | 2003-11-04 | Sharp Laboratories Of America, Inc. | Thin-film transistors formed on a metal foil substrate |
TW548853B (en) | 2002-09-13 | 2003-08-21 | Ind Tech Res Inst | Method of manufacturing flexible TFT display |
JP4373085B2 (ja) * | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
US7436050B2 (en) * | 2003-01-22 | 2008-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a flexible printed circuit |
JP3585912B2 (ja) | 2003-05-14 | 2004-11-10 | 株式会社東芝 | 半導体装置 |
KR100988084B1 (ko) | 2003-06-07 | 2010-10-18 | 삼성전자주식회사 | 박막 트랜지스터 제조방법 |
JP4182022B2 (ja) | 2004-04-01 | 2008-11-19 | キヤノン株式会社 | 表示装置用パネル及び表示装置 |
US20060202209A1 (en) * | 2005-03-09 | 2006-09-14 | Kelman Maxim B | Limiting net curvature in a wafer |
-
2005
- 2005-11-24 JP JP2005339510A patent/JP4316558B2/ja active Active
-
2006
- 2006-06-27 US US11/477,101 patent/US7727823B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2007011256A (ja) | 2007-01-18 |
US20060289868A1 (en) | 2006-12-28 |
US7727823B2 (en) | 2010-06-01 |
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