JP2015179818A - 半導体装置及び該半導体装置を用いた表示装置 - Google Patents
半導体装置及び該半導体装置を用いた表示装置 Download PDFInfo
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- JP2015179818A JP2015179818A JP2014263891A JP2014263891A JP2015179818A JP 2015179818 A JP2015179818 A JP 2015179818A JP 2014263891 A JP2014263891 A JP 2014263891A JP 2014263891 A JP2014263891 A JP 2014263891A JP 2015179818 A JP2015179818 A JP 2015179818A
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract
【解決手段】酸化物絶縁膜と、酸化物絶縁膜上の酸化物半導体膜と、酸化物半導体膜に接するソース電極及びドレイン電極と、ソース電極とドレイン電極間のゲート絶縁膜と、ゲート絶縁膜を介して酸化物半導体膜と重なるゲート電極と、を有し、酸化物半導体膜は、ゲート電極と重なる第1の領域と、ゲート電極、ソース電極、及びドレイン電極と重ならない第2の領域と、を有し、第1の領域及び第2の領域は、不純物元素の濃度が異なり、ゲート電極、ソース電極、及びドレイン電極は、同一の金属元素を含む。
【選択図】図1
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1乃至図11を用いて説明する。
図1に、半導体装置に含まれるトランジスタの一例として、トップゲート構造のトランジスタを示す。
次に、半導体装置の別の構成について、図3を用いて説明する。
次に、半導体装置の別の構成を図4、図5、及び図11を用いて説明する。
ここで、図4及び図5に示すトランジスタのバンド構造について説明する。なお、図11(A)は、図4に示すトランジスタ153のバンド構造であり、理解を容易にするため、絶縁膜104、酸化物半導体膜107a、酸化物半導体膜107b、酸化物半導体膜107cおよび絶縁膜108の伝導帯下端のエネルギー(Ec)を示す。また、図11(B)は、図5に示すトランジスタ154のバンド構造であり、理解を容易にするため、絶縁膜104、酸化物半導体膜107b、酸化物半導体膜107cおよび絶縁膜108の伝導帯下端のエネルギー(Ec)を示す。
次に、半導体装置の別の構成について、図6を用いて説明する。
次に、図1に示すトランジスタ150の作製方法について、図7乃至図9を用いて説明する。
図3に示すトランジスタ151の作製方法を説明する。なお、ここでは、トランジスタ151の導電膜110、導電膜112、及び導電膜114に含まれる導電膜110c、導電膜112c、及び導電膜114cの形成工程と、酸化物半導体膜106に不純物元素117を添加する工程について説明する。
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図12乃至図22を用いて説明する。なお、本実施の形態は、実施の形態1と比較して、低抵抗領域の作製方法が異なる。
図12に、半導体装置に含まれるトランジスタの一例として、トップゲート構造のトランジスタを示す。
次に、半導体装置の別の構成について、図14を用いて説明する。
次に、半導体装置の別の構成を図15及び図16を用いて説明する。
次に、半導体装置の別の構成について、図17を用いて説明する。
次に、半導体装置の別の構成について、図25及び図26を用いて説明する。
次に、半導体装置の別の構成について、図38を用いて説明する。
次に、図12に示すトランジスタ190の作製方法について、図18乃至図20を用いて説明する。
図14に示すトランジスタ191の作製方法を説明する。なお、ここでは、トランジスタ191の導電膜170、導電膜172、及び導電膜174に含まれる導電膜170c、導電膜172c、及び導電膜174cの形成工程と、酸化物半導体膜166に不純物元素177を添加する工程について説明する。
図12に示すトランジスタ190の別の作製方法を説明する。なお、ここでは、不純物元素の添加工程と、絶縁膜176の作製工程について図22を用いて説明する。
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図23及び図24を用いて説明する。
図23に、半導体装置に含まれるトランジスタ150と、トランジスタ150と接続する容量素子159の構造を示す。
図24に、半導体装置に含まれるトランジスタ190と、該トランジスタ190と接続する容量素子199の構造を示す。
本実施の形態では、本発明の一態様の半導体装置に含まれる酸化物半導体膜の構成について以下詳細に説明を行う。
酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体とに分けられる。非単結晶酸化物半導体としては、CAAC−OS、多結晶酸化物半導体、微結晶酸化物半導体、非晶質酸化物半導体などがある。
まずは、CAAC−OSについて説明する。なお、CAAC−OSを、CANC(C−Axis Aligned nanocrystals)を有する酸化物半導体と呼ぶこともできる。
次に、微結晶酸化物半導体について説明する。
次に、非晶質酸化物半導体について説明する。
なお、酸化物半導体は、nc−OSと非晶質酸化物半導体との間の構造を有する場合がある。そのような構造を有する酸化物半導体を、特に非晶質ライク酸化物半導体(a−like OS:amorphous−like Oxide Semiconductor)と呼ぶ。
以下では、CAAC−OSおよびnc−OSの成膜モデルの一例について説明する。
本実施の形態においては、先の実施の形態で例示したトランジスタを用いて表示機能を有する表示装置の一例について、図27乃至図30を用いて以下説明を行う。
図28は、図27(A)に示す一点鎖線Q−Rにおける切断面に相当する断面図である。図29は、図27(B)に示す一点鎖線V−Wにおける切断面に相当する断面図である。
図28に示す表示装置700は、液晶素子775を有する。液晶素子775は、導電膜772、導電膜774、及び液晶層776を有する。導電膜774は、第2の基板705側に設けられ、対向電極としての機能を有する。図28に示す表示装置700は、導電膜772と導電膜774に印加される電圧によって、液晶層776の配向状態が変わることによって光の透過、非透過が制御され画像を表示することができる。
図29に示す表示装置800は、発光素子880を有する。発光素子880は、導電膜844、EL層846、及び導電膜848を有する。表示装置800は、発光素子880が有するEL層846が発光することによって、画像を表示することができる。
図30に示す表示装置700Aは、液晶素子775を有する。液晶素子775は、導電膜773、導電膜777、及び液晶層776を有する。導電膜773は、第1の基板701上の平坦化絶縁膜770上に設けられ、反射電極としての機能を有する。図30に示す表示装置700Aは、外光を利用し導電膜773で光を反射して着色膜836を介して表示する、所謂反射型のカラー液晶表示装置である。
本実施の形態では、本発明の一態様の半導体装置を用いることができる表示装置について、図31を用いて説明を行う。
本実施の形態では、本発明の一態様の半導体装置を用いることができる表示モジュール及び電子機器について、図32及び図33を用いて説明を行う。
103 絶縁膜
104 絶縁膜
104a 窒化物絶縁膜
104b 酸化物絶縁膜
106 酸化物半導体膜
106a 領域
106b 領域
106c 領域
106d 領域
107a 酸化物半導体膜
107b 酸化物半導体膜
107c 酸化物半導体膜
108 絶縁膜
109 導電膜
110 導電膜
110a 導電膜
110b 導電膜
110c 導電膜
111 マスク
112 導電膜
112a 導電膜
112b 導電膜
112c 導電膜
114 導電膜
114a 導電膜
114b 導電膜
114c 導電膜
116 絶縁膜
117 不純物元素
118 絶縁膜
119 膜
120 導電膜
120a 導電膜
121 酸素
122 絶縁膜
123 エッチングガス
124 導電膜
135 端部
136 端部
137 端部
140a 開口部
140b 開口部
142a 開口部
142b 開口部
150 トランジスタ
150A トランジスタ
151 トランジスタ
152 トランジスタ
153 トランジスタ
154 トランジスタ
156 酸化物半導体膜
159 容量素子
162 基板
164 絶縁膜
164a 窒化物絶縁膜
164b 酸化物絶縁膜
166 酸化物半導体膜
166a 領域
166b 領域
166c 領域
166d 領域
166x 領域
166y 領域
167 エッチングガス
167a 酸化物半導体膜
167b 酸化物半導体膜
167c 酸化物半導体膜
168 絶縁膜
169 導電膜
170 導電膜
170a 導電膜
170b 導電膜
170c 導電膜
170d 導電膜
170e 導電膜
172 導電膜
172a 導電膜
172b 導電膜
172c 導電膜
172d 導電膜
172e 導電膜
174 導電膜
174a 導電膜
174b 導電膜
174c 導電膜
174d 導電膜
174e 導電膜
176 絶縁膜
177 不純物元素
178 絶縁膜
180a 開口部
180b 開口部
181 導電膜
182 絶縁膜
182a 開口部
182b 開口部
183 開口部
184 導電膜
190 トランジスタ
190A トランジスタ
190B トランジスタ
191 トランジスタ
192 トランジスタ
193 トランジスタ
194 トランジスタ
195 端部
196 端部
197 端部
198 酸化物半導体膜
199 容量素子
501 画素回路
502 画素部
504 駆動回路部
504a ゲートドライバ
504b ソースドライバ
506 保護回路
507 端子部
550 トランジスタ
552 トランジスタ
554 トランジスタ
560 容量素子
562 容量素子
570 液晶素子
572 発光素子
700 表示装置
700A 表示装置
701 基板
702 画素部
704 ソースドライバ回路部
705 基板
706 ゲートドライバ回路部
708 FPC端子部
710 信号線
710a 信号線
711 配線部
712 シール材
716 FPC
750 トランジスタ
752 トランジスタ
760 接続電極
760a 接続電極
764 絶縁膜
766 絶縁膜
770 平坦化絶縁膜
772 導電膜
773 導電膜
774 導電膜
775 液晶素子
776 液晶層
777 導電膜
778 スペーサ
780 異方性導電膜
790 容量素子
792 導電膜
800 表示装置
802 画素部
830 絶縁膜
832 封止膜
834 絶縁膜
836 着色膜
838 遮光膜
844 導電膜
846 EL層
848 導電膜
880 発光素子
900 接続部
902 基板
904 絶縁膜
908 絶縁膜
910 導電膜
912 導電膜
914 導電膜
916 絶縁膜
918 絶縁膜
930a 開口部
930b 開口部
945 導電膜
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
5100 ペレット
5100a ペレット
5100b ペレット
5101 イオン
5102 酸化亜鉛層
5103 粒子
5105a ペレット
5105a1 領域
5105a2 ペレット
5105b ペレット
5105c ペレット
5105d ペレット
5105d1 領域
5105e ペレット
5120 基板
5130 ターゲット
5161 領域
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライト
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (11)
- 酸化物絶縁膜と、
前記酸化物絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜に接するソース電極及びドレイン電極と、
前記ソース電極と前記ドレイン電極間のゲート絶縁膜と、
前記ゲート絶縁膜を介して前記酸化物半導体膜と重なるゲート電極と、を有し、
前記酸化物半導体膜は、
前記ゲート電極と重なる第1の領域と、前記ゲート電極、前記ソース電極、及び前記ドレイン電極と重ならない第2の領域と、を有し、
前記第1の領域及び前記第2の領域は、不純物元素の濃度が異なり、
前記ゲート電極、前記ソース電極、及び前記ドレイン電極は、同一の金属元素を含む、
ことを特徴とする半導体装置。 - 酸化物絶縁膜と、
前記酸化物絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜に接するソース電極及びドレイン電極と、
前記ソース電極と前記ドレイン電極間のゲート絶縁膜と、
前記ゲート絶縁膜を介して前記酸化物半導体膜と重なるゲート電極と、を有し、
前記酸化物半導体膜は、
前記ゲート電極と重なる第1の領域と、前記ゲート電極、前記ソース電極、及び前記ドレイン電極と重ならない第2の領域と、を有し、
前記第1の領域及び前記第2の領域は、不純物元素の濃度が異なり、
前記第2の領域には、窒化物絶縁膜が接して設けられ、
前記ゲート電極、前記ソース電極、及び前記ドレイン電極は、同一の金属元素を含む、
ことを特徴とする半導体装置。 - 請求項1または請求項2において、
前記第1の領域より前記第2の領域の不純物元素の濃度が高い、
ことを特徴とする半導体装置。 - 請求項1または請求項2において、
前記不純物元素は、水素、ホウ素、炭素、窒素、フッ素、アルミニウム、シリコン、リンまたは塩素の中から選ばれるいずれか一つを有する、
ことを特徴とする半導体装置。 - 請求項2において、
前記窒化物絶縁膜は、窒化シリコン膜である、
ことを特徴とする半導体装置。 - 酸化物絶縁膜と、
前記酸化物絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜に接するソース電極及びドレイン電極と、
前記ソース電極と前記ドレイン電極間のゲート絶縁膜と、
前記ゲート絶縁膜を介して前記酸化物半導体膜と重なるゲート電極と、を有し、
前記酸化物半導体膜は、
前記ゲート電極と重なる第1の領域と、前記ゲート電極、前記ソース電極、及び前記ドレイン電極と重ならない第2の領域と、を有し、
前記第2の領域は、前記第1の領域よりも水素濃度が高く、
前記ゲート電極、前記ソース電極、及び前記ドレイン電極は、同一の金属元素を含む、
ことを特徴とする半導体装置。 - 酸化物絶縁膜と、
前記酸化物絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜に接するソース電極及びドレイン電極と、
前記ソース電極と前記ドレイン電極間のゲート絶縁膜と、
前記ゲート絶縁膜を介して前記酸化物半導体膜と重なるゲート電極と、を有し、
前記酸化物半導体膜は、
前記ゲート電極と重なる第1の領域と、前記ゲート電極、前記ソース電極、及び前記ドレイン電極と重ならない第2の領域と、を有し、
前記第1の領域は、前記第2の領域よりも結晶性が高く、
前記ゲート電極、前記ソース電極、及び前記ドレイン電極は、同一の金属元素を含む、
ことを特徴とする半導体装置。 - 請求項1、請求項2、請求項6または請求項7のいずれか一つにおいて、
前記ゲート電極と前記ソース電極及び前記ドレイン電極は、
少なくとも一部が同一平面上に形成される、
ことを特徴とする半導体装置。 - 請求項1、請求項2、請求項6または請求項7のいずれか一つにおいて、
前記酸化物半導体膜は、
In−M−Zn酸化物(Mは、Ti、Ga、Y、Zr、La、Ce、Nd、またはHf)である、
ことを特徴とする半導体装置。 - 請求項1、請求項2、請求項6または請求項7のいずれか一つにおいて、
前記酸化物半導体膜は、
結晶部を含み、前記結晶部のc軸が前記酸化物半導体膜の被形成面の法線ベクトルに平行である、
ことを特徴とする半導体装置。 - 請求項1乃至請求項10に記載のいずれか一つの半導体装置を用いた表示装置。
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JP2018026526A (ja) * | 2016-05-20 | 2018-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置または当該半導体装置を有する表示装置 |
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JP2022106746A (ja) | 2022-07-20 |
JP7057458B2 (ja) | 2022-04-19 |
US20170338353A1 (en) | 2017-11-23 |
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US20150187953A1 (en) | 2015-07-02 |
JP7413431B2 (ja) | 2024-01-15 |
US9722095B2 (en) | 2017-08-01 |
JP2024032718A (ja) | 2024-03-12 |
JP2019149574A (ja) | 2019-09-05 |
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US9577110B2 (en) | 2017-02-21 |
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US20170162716A1 (en) | 2017-06-08 |
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