JP2009152551A5 - - Google Patents

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JP2009152551A5
JP2009152551A5 JP2008271319A JP2008271319A JP2009152551A5 JP 2009152551 A5 JP2009152551 A5 JP 2009152551A5 JP 2008271319 A JP2008271319 A JP 2008271319A JP 2008271319 A JP2008271319 A JP 2008271319A JP 2009152551 A5 JP2009152551 A5 JP 2009152551A5
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silicon
oxide layer
silicon oxide
room temperature
substrate
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JP2009152551A (ja
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  1. シリコン酸化物層を基板上に形成する方法であって、
    基板を準備するステップと、
    前記基板の少なくとも一部を覆う第1のシリコン酸化物層を形成するステップであって、前記第1のシリコン酸化物層が、残留する水、水酸基及び炭素種を含むステップと、
    前記第1のシリコン酸化物層を、約10ミリトール〜約600トールの圧力、室温程度から約900℃の温度で、約1秒〜約3時間、複数のシリコン含有種に曝すステップであって、前記複数のシリコン含有種のうちの少なくとも一部が、前記残留する水及び水酸基の少なくとも一部と反応するか、または、熱分解されて複数の非晶質シリコン成分を形成し、前記複数の非晶質シリコン成分が、前記第1のシリコン酸化物層と部分的に混合するステップと、
    前記複数の非晶質シリコン成分と部分的に混合された前記第1のシリコン酸化物層を、酸化環境中でアニーリングして、第2のシリコン酸化物層を前記基板上に形成するステップであって、前記非晶質シリコン成分の少なくとも一部が、酸化されて、前記第2のシリコン酸化物層の一部になり、また、前記第2のシリコン酸化物層内の未反応の残留する水酸基及び炭素種が、実質的に除去されるステップと、
    を備える方法。
  2. 前記第1のシリコン酸化物層が、シリコン含有前駆体と、遠隔プラズマ源によって生成される原子酸素を備える酸素含有前駆体の化学気相堆積を用いて堆積される請求項1に記載の方法。
  3. 前記シリコン酸化物層の少なくとも一部が、STI構造で形成される請求項1または2に記載の方法。
  4. 前記シリコン含有種が、線形ポリシラン(シラン、ジシラン及び高級同族体)、環状ポリシラン(シクロペンタシラン)、ジクロロシラン、テトラクロロシランを備える請求項1〜3のいずれか一項に記載の方法。
  5. 前記複数のシリコン含有種が、不活性ガスで希釈することができる請求項1〜4のいずれか一項に記載の方法。
  6. 前記酸化環境が、室温程度から約900℃の蒸気、室温程度から約600℃のオゾン、室温程度から約900℃の分子酸素、または、室温程度から約600℃における遠隔プラズマ源からの原子酸素を備える請求項1〜5のいずれか一項に記載の方法。
  7. 前記アニーリングステップが、急速加熱処理チャンバ内で実行される請求項1〜6のいずれか一項に記載の方法。
  8. シリコン酸化物層を基板上に形成する方法であって、
    基板を準備するステップと、
    非晶質シリコン層を、前記基板上の少なくとも一部に堆積するステップと、
    前記非晶質シリコン層を覆う第1のシリコン酸化物層を堆積するステップであって、前記第1のシリコン酸化物層が水酸基及び炭素種を含むステップと、
    前記非晶質シリコン層を覆う第1のシリコン酸化物層を、酸化環境中でアニーリングして、第2のシリコン酸化物層を前記基板上に形成するステップであって、前記非晶質シリコン層が、酸化されて前記第2のシリコン酸化物層の一部になり、前記第2のシリコン酸化物層内の水酸基及び炭素種が、実質的に除去されるステップと、
    を備える方法。
  9. 前記アニーリングのプロセスの前に、非晶質シリコン層を形成するプロセスと、前記非晶質シリコン層を覆う第1のシリコン酸化物層を形成するプロセスとを、目標の厚さに達するまで交互に行うステップをさらに備える請求項に記載の方法。
  10. 前記非晶質シリコン層が、線形ポリシラン(シラン、ジシラン及び高級同族体)、環状ポリシラン(シクロペンタシラン)、アルキルシラン(メチルシラン、トリメチルシラン、テトラメチルシラン)、ジクロロシラン及びテトラクロロシランからなる群から選択される少なくとも1つの前駆体を用いて、熱CVDプロセス、プラズマCVDプロセス、プラズマジェットプロセスまたはホットワイヤCVDプロセスによって堆積することができる請求項に記載の方法。
  11. 前記非晶質シリコン層が、STI構造を含む基板構造に追従するようにコンフォーマルであるシリコンリッチな自己集合の単層を備える請求項に記載の方法。
  12. 各交互の堆積サイクルにおいて、前記非晶質シリコン層を覆う第1のシリコン酸化物層を形成するステップが、シリコン含有前駆体及び遠隔プラズマ源によって生成される原子酸素を用いた化学気相堆積を用いて、5〜500Åのシリコン酸化膜を堆積する工程を備える請求項に記載の方法。
  13. 前記アニーリングのプロセスが、室温から約900℃の蒸気、室温から約600℃のオゾン、室温から約900℃の分子酸素、または、室温から約600℃における遠隔プラズマ源からの原子酸素のうちの1つを含む酸化環境中で実行される急速加熱処理である請求項に記載の方法。
  14. シリコン酸化物層を基板上に形成する方法であって、
    1つ以上の溝を含む基板を、半導体プロセスチャンバ内に設けるステップと、
    水酸基及び炭素種を含む第1のシリコン酸化物層を前記基板上に堆積するステップであって、前記第1のシリコン酸化物層が、前記1つ以上の溝を少なくとも部分的に充填するステップと、
    複数のシリコン含有粒子を前記半導体プロセスチャンバ内に導入するステップであって、前記シリコン含有粒子が、前記第1のシリコン酸化物層内に組込まれるステップと、
    前記複数のシリコン含有粒子を含む前記第1のシリコン酸化物層を酸化環境中でアニーリングすることにより、第2のシリコン酸化物層を形成するステップであって、前記複数のシリコン含有粒子が酸化され、また、前記水酸基及び炭素種が実質的に除去されるステップと、
    を備える方法。
  15. 前記第2のシリコン酸化物層が、前記第1のシリコン酸化物層よりも緻密であり、実質的にボイドフリーの状態で、前記1つ以上の溝を充填する請求項14に記載の方法。
  16. 前記1つ以上の溝が、11:1以上のアスペクト比を有する請求項14に記載の方法。
  17. 前記第1のシリコン酸化物層が、シリコン含有前駆体及び遠隔プラズマ源によって生成される原子酸素を用いた化学気相堆積を用いて堆積され、1つ以上のSTI構造を少なくとも部分的に充填する請求項14に記載の方法。
  18. 前記シリコン含有粒子を半導体プロセスチャンバ内に導入するプロセスが、
    プラズマによって、シリコンリッチな前駆体から前記シリコン含有粒子を生成するステップと、
    所定の期間、前記プラズマをターンオフすることにより、前記プラズマが生成したシリコン含有粒子を、前記第1のシリコン酸化物層上に堆積するステップと、
    を備える請求項14に記載の方法。
  19. 前記シリコン含有粒子を生成するプロセスが、遠隔プラズマチャンバ内で実行することができ、その後、前記シリコン含有粒子が、前記第1のシリコン酸化物層で覆われている前記基板が設けられている半導体プロセスチャンバ内に供給される請求項18に記載の方法。
  20. 前記プラズマが生成したシリコン含有粒子を堆積するステップが、前記第1のシリコン酸化物層を前記半導体プロセスチャンバ内で形成するステップと同時に行うことができる請求項18に記載の方法。
  21. 前記シリコン含有粒子が、10〜50nmの直径を有する請求項18に記載の方法。
  22. 前記アニーリングするプロセスが、室温から900℃の蒸気、室温から600℃のオゾン、室温から900℃の分子酸素、または、室温から600℃における遠隔プラズマ源からの原子酸素を用いて、別のチャンバ内で実行される急速加熱処理とすることができる請求項14に記載の方法。
JP2008271319A 2007-10-22 2008-10-21 ボイドフリーギャップ充填に対する誘電体膜品質を向上させる方法及びシステム Pending JP2009152551A (ja)

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US (1) US7541297B2 (ja)
EP (1) EP2053640A3 (ja)
JP (2) JP2009152551A (ja)
KR (1) KR101019768B1 (ja)
CN (1) CN101425461B (ja)
SG (1) SG152169A1 (ja)
TW (1) TWI351061B (ja)

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