DE10322733A1 - Halbleiterspeichervorrichtung mit stabil erzeugter interner Spannung - Google Patents

Halbleiterspeichervorrichtung mit stabil erzeugter interner Spannung Download PDF

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Publication number
DE10322733A1
DE10322733A1 DE10322733A DE10322733A DE10322733A1 DE 10322733 A1 DE10322733 A1 DE 10322733A1 DE 10322733 A DE10322733 A DE 10322733A DE 10322733 A DE10322733 A DE 10322733A DE 10322733 A1 DE10322733 A1 DE 10322733A1
Authority
DE
Germany
Prior art keywords
voltage
level
signal
circuit
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10322733A
Other languages
German (de)
English (en)
Inventor
Tadaaki Yamauchi
Junko Matsumoto
Takeo Okamoto
Makoto Suwa
Tetsuichiro Ichiguchi
Hideki Yonetani
Tsutomu Nagasawa
Zengcheng Itami Tian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10322733A1 publication Critical patent/DE10322733A1/de
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
DE10322733A 2002-05-20 2003-05-20 Halbleiterspeichervorrichtung mit stabil erzeugter interner Spannung Withdrawn DE10322733A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-144869 2002-05-20
JP2002144869A JP4386619B2 (ja) 2002-05-20 2002-05-20 半導体装置

Publications (1)

Publication Number Publication Date
DE10322733A1 true DE10322733A1 (de) 2004-03-04

Family

ID=29417087

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10322733A Withdrawn DE10322733A1 (de) 2002-05-20 2003-05-20 Halbleiterspeichervorrichtung mit stabil erzeugter interner Spannung

Country Status (6)

Country Link
US (1) US6954103B2 (enExample)
JP (1) JP4386619B2 (enExample)
KR (1) KR100545422B1 (enExample)
CN (3) CN100505093C (enExample)
DE (1) DE10322733A1 (enExample)
TW (1) TWI222639B (enExample)

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TWI425520B (zh) * 2008-05-12 2014-02-01 Taiwan Semiconductor Mfg 用於記憶體元件之電源啟動／切斷序列機制
JP5211889B2 (ja) * 2008-06-25 2013-06-12 富士通株式会社 半導体集積回路
CN101639797B (zh) * 2008-07-30 2011-05-04 鸿富锦精密工业（深圳）有限公司 内存侦测电路
KR101559908B1 (ko) * 2009-01-20 2015-10-15 삼성전자주식회사 반도체 메모리 장치의 내부전압 발생회로
JP2010176742A (ja) * 2009-01-29 2010-08-12 Elpida Memory Inc 半導体装置及びデータ処理システム
US8054120B2 (en) * 2009-06-30 2011-11-08 Stmicroelectronics Design & Application Gmbh Integrated circuit operable in a standby mode
JP5512226B2 (ja) * 2009-10-27 2014-06-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2011233631A (ja) * 2010-04-26 2011-11-17 Elpida Memory Inc 半導体装置
KR101782137B1 (ko) * 2010-11-08 2017-09-27 삼성전자주식회사 파워 온 리셋 회로
JP5727211B2 (ja) * 2010-12-17 2015-06-03 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
CN102157193B (zh) * 2011-03-28 2013-04-17 钰创科技股份有限公司 存储器的电压调整器
JP2015050722A (ja) * 2013-09-04 2015-03-16 ソニー株式会社 信号出力回路および信号出力方法
CN104795087B (zh) * 2014-01-22 2017-08-25 中芯国际集成电路制造(上海)有限公司 用于读取数据的灵敏放大器及存储器
US9317051B2 (en) * 2014-02-06 2016-04-19 SK Hynix Inc. Internal voltage generation circuits
JP5733771B2 (ja) * 2014-06-17 2015-06-10 ラピスセミコンダクタ株式会社 半導体メモリ
KR102280433B1 (ko) * 2015-09-23 2021-07-22 삼성전자주식회사 전력 공급 회로 및 이를 포함하는 저장 장치
CN106680686A (zh) * 2016-12-29 2017-05-17 浙江大学 一种提高半导体器件皮秒级超快速电学特性测试精度的方法
US10700683B1 (en) * 2018-08-28 2020-06-30 Qualcomm Incorporated Dynamic power supply shifting
CN109946580B (zh) * 2019-04-09 2020-09-04 浙江大学 一种应用于半导体器件超高速实时表征的信号同步方法
JP6998981B2 (ja) * 2020-03-03 2022-01-18 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
CN113467565B (zh) * 2021-07-08 2025-05-30 海宁奕斯伟计算技术有限公司 驱动系统、驱动方法、计算机系统和可读介质
CN117938145B (zh) * 2024-03-22 2024-06-04 深圳安森德半导体有限公司 一种能够实现初态自动控制的电平转换电路

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Also Published As

Publication number Publication date
CN100550185C (zh) 2009-10-14
CN1937069A (zh) 2007-03-28
US6954103B2 (en) 2005-10-11
CN1937068A (zh) 2007-03-28
JP2003338178A (ja) 2003-11-28
CN100550184C (zh) 2009-10-14
KR100545422B1 (ko) 2006-01-24
KR20030090535A (ko) 2003-11-28
JP4386619B2 (ja) 2009-12-16
CN1461009A (zh) 2003-12-10
US20030214345A1 (en) 2003-11-20
CN100505093C (zh) 2009-06-24
TW200401292A (en) 2004-01-16
TWI222639B (en) 2004-10-21

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