CN100505093C - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN100505093C
CN100505093C CNB03136750XA CN03136750A CN100505093C CN 100505093 C CN100505093 C CN 100505093C CN B03136750X A CNB03136750X A CN B03136750XA CN 03136750 A CN03136750 A CN 03136750A CN 100505093 C CN100505093 C CN 100505093C
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CN
China
Prior art keywords
voltage
signal
circuit
level
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB03136750XA
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English (en)
Chinese (zh)
Other versions
CN1461009A (zh
Inventor
山内忠昭
松本淳子
冈本武郎
诹访真人
市口哲一郎
米谷英树
长泽勉
田增成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1461009A publication Critical patent/CN1461009A/zh
Application granted granted Critical
Publication of CN100505093C publication Critical patent/CN100505093C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
CNB03136750XA 2002-05-20 2003-05-20 半导体装置 Expired - Fee Related CN100505093C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP144869/2002 2002-05-20
JP2002144869A JP4386619B2 (ja) 2002-05-20 2002-05-20 半導体装置
JP144869/02 2002-05-20

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CNB2006101425396A Division CN100550184C (zh) 2002-05-20 2003-05-20 半导体装置
CNB2006101425409A Division CN100550185C (zh) 2002-05-20 2003-05-20 半导体装置

Publications (2)

Publication Number Publication Date
CN1461009A CN1461009A (zh) 2003-12-10
CN100505093C true CN100505093C (zh) 2009-06-24

Family

ID=29417087

Family Applications (3)

Application Number Title Priority Date Filing Date
CNB03136750XA Expired - Fee Related CN100505093C (zh) 2002-05-20 2003-05-20 半导体装置
CNB2006101425409A Expired - Fee Related CN100550185C (zh) 2002-05-20 2003-05-20 半导体装置
CNB2006101425396A Expired - Fee Related CN100550184C (zh) 2002-05-20 2003-05-20 半导体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
CNB2006101425409A Expired - Fee Related CN100550185C (zh) 2002-05-20 2003-05-20 半导体装置
CNB2006101425396A Expired - Fee Related CN100550184C (zh) 2002-05-20 2003-05-20 半导体装置

Country Status (6)

Country Link
US (1) US6954103B2 (enExample)
JP (1) JP4386619B2 (enExample)
KR (1) KR100545422B1 (enExample)
CN (3) CN100505093C (enExample)
DE (1) DE10322733A1 (enExample)
TW (1) TWI222639B (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100626367B1 (ko) * 2003-10-02 2006-09-20 삼성전자주식회사 내부전압 발생장치
JP4374254B2 (ja) * 2004-01-27 2009-12-02 Ｏｋｉセミコンダクタ株式会社 バイアス電圧発生回路
CN101027619A (zh) * 2004-05-14 2007-08-29 泽默斯技术有限公司 内部电压发生器方案和电源管理方法
US7782090B2 (en) * 2004-08-02 2010-08-24 Panasonic Corporation Semiconductor device
KR100585168B1 (ko) * 2004-12-22 2006-06-02 삼성전자주식회사 다중경로 입력버퍼회로
KR100754328B1 (ko) * 2005-02-15 2007-08-31 삼성전자주식회사 내부전원전압 발생회로 및 이를 포함하는 반도체 메모리 장치
JP2006279203A (ja) 2005-03-28 2006-10-12 Fujitsu Ltd レベル変換回路
JP4820571B2 (ja) * 2005-04-15 2011-11-24 ルネサスエレクトロニクス株式会社 半導体装置
KR100753048B1 (ko) 2005-09-05 2007-08-30 주식회사 하이닉스반도체 반도체 메모리 장치의 주변영역 전압 발생 장치
JP4391976B2 (ja) * 2005-09-16 2009-12-24 富士通株式会社 クロック分配回路
US8199600B2 (en) * 2005-09-28 2012-06-12 Hynix Semiconductor Inc. Voltage generator for peripheral circuit
JP2007095075A (ja) * 2005-09-29 2007-04-12 Hynix Semiconductor Inc 内部電圧生成装置
KR100818706B1 (ko) * 2006-01-09 2008-04-02 주식회사 하이닉스반도체 반도체 소자의 내부 전압 발생 장치
KR100771870B1 (ko) 2006-05-19 2007-11-01 삼성전자주식회사 반도체 메모리장치의 승압전압 검출회로 및 이를 제어하는방법
US7595687B2 (en) * 2006-07-31 2009-09-29 Wisconsin Alumni Research Foundation Apparatus and method for reducing EMI generated by a power conversion device
US7768756B2 (en) 2007-04-27 2010-08-03 Hewlett-Packard Development Company, L.P. Leakage current protection circuit
KR100892640B1 (ko) * 2007-05-10 2009-04-09 주식회사 하이닉스반도체 반도체 집적 회로
US7868605B1 (en) 2007-07-02 2011-01-11 Altera Corporation Mixed mode power regulator circuitry for memory elements
US7705659B1 (en) * 2007-07-02 2010-04-27 Altera Corporation Power regulator circuitry with power-on-reset control
JP2009081384A (ja) * 2007-09-27 2009-04-16 Nec Electronics Corp 半導体装置
KR100925368B1 (ko) * 2007-12-20 2009-11-09 주식회사 하이닉스반도체 센스앰프 전압 공급 회로 및 그의 구동 방법
TWI425520B (zh) * 2008-05-12 2014-02-01 Taiwan Semiconductor Mfg 用於記憶體元件之電源啟動／切斷序列機制
JP5211889B2 (ja) * 2008-06-25 2013-06-12 富士通株式会社 半導体集積回路
CN101639797B (zh) * 2008-07-30 2011-05-04 鸿富锦精密工业（深圳）有限公司 内存侦测电路
KR101559908B1 (ko) * 2009-01-20 2015-10-15 삼성전자주식회사 반도체 메모리 장치의 내부전압 발생회로
JP2010176742A (ja) * 2009-01-29 2010-08-12 Elpida Memory Inc 半導体装置及びデータ処理システム
US8054120B2 (en) * 2009-06-30 2011-11-08 Stmicroelectronics Design & Application Gmbh Integrated circuit operable in a standby mode
JP5512226B2 (ja) * 2009-10-27 2014-06-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2011233631A (ja) * 2010-04-26 2011-11-17 Elpida Memory Inc 半導体装置
KR101782137B1 (ko) * 2010-11-08 2017-09-27 삼성전자주식회사 파워 온 리셋 회로
JP5727211B2 (ja) * 2010-12-17 2015-06-03 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
CN102157193B (zh) * 2011-03-28 2013-04-17 钰创科技股份有限公司 存储器的电压调整器
JP2015050722A (ja) * 2013-09-04 2015-03-16 ソニー株式会社 信号出力回路および信号出力方法
CN104795087B (zh) * 2014-01-22 2017-08-25 中芯国际集成电路制造(上海)有限公司 用于读取数据的灵敏放大器及存储器
US9317051B2 (en) * 2014-02-06 2016-04-19 SK Hynix Inc. Internal voltage generation circuits
JP5733771B2 (ja) * 2014-06-17 2015-06-10 ラピスセミコンダクタ株式会社 半導体メモリ
KR102280433B1 (ko) * 2015-09-23 2021-07-22 삼성전자주식회사 전력 공급 회로 및 이를 포함하는 저장 장치
CN106680686A (zh) * 2016-12-29 2017-05-17 浙江大学 一种提高半导体器件皮秒级超快速电学特性测试精度的方法
US10700683B1 (en) * 2018-08-28 2020-06-30 Qualcomm Incorporated Dynamic power supply shifting
CN109946580B (zh) * 2019-04-09 2020-09-04 浙江大学 一种应用于半导体器件超高速实时表征的信号同步方法
JP6998981B2 (ja) * 2020-03-03 2022-01-18 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
CN113467565B (zh) * 2021-07-08 2025-05-30 海宁奕斯伟计算技术有限公司 驱动系统、驱动方法、计算机系统和可读介质
CN117938145B (zh) * 2024-03-22 2024-06-04 深圳安森德半导体有限公司 一种能够实现初态自动控制的电平转换电路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6067269A (en) * 1997-12-31 2000-05-23 Samsung Electronics Co., Ltd. Semiconductor memory device capable of operating at a low power supply voltage

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427094A (en) 1987-07-23 1989-01-30 Mitsubishi Electric Corp Mos-type semiconductor memory
JPH05120884A (ja) 1991-10-28 1993-05-18 Nec Corp 半導体集積回路
JP3239581B2 (ja) 1994-01-26 2001-12-17 富士通株式会社 半導体集積回路の製造方法及び半導体集積回路
JP3450091B2 (ja) 1995-04-06 2003-09-22 株式会社リコー 昇圧回路装置及び昇圧方法
JPH09274793A (ja) 1996-04-04 1997-10-21 Kawasaki Steel Corp ダイナミックランダムアクセスメモリ
JPH10199241A (ja) 1997-01-06 1998-07-31 Mitsubishi Electric Corp 半導体記憶装置
JPH10228768A (ja) 1997-02-14 1998-08-25 Mitsubishi Electric Corp 半導体記憶装置
JP3346273B2 (ja) 1998-04-24 2002-11-18 日本電気株式会社 ブースト回路および半導体記憶装置
JP2000021166A (ja) 1998-06-30 2000-01-21 Hitachi Ltd 昇圧回路
JP4368994B2 (ja) 1999-05-14 2009-11-18 株式会社ルネサステクノロジ 半導体装置
JP4053718B2 (ja) * 2000-09-07 2008-02-27 富士通株式会社 半導体記憶装置の内部電源供給回路及び半導体記憶装置の内部電源供給方法
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR100446297B1 (ko) * 2002-04-02 2004-08-30 삼성전자주식회사 외부 전압의 변화에 무관하게 안정된 출력 전압을발생하는 전압 발생회로
KR100456597B1 (ko) * 2002-07-16 2004-11-09 삼성전자주식회사 외부 전압 레벨에 따라 내부 전압을 선택적으로 발생하는반도체 메모리 장치 및 그 내부 전압 발생 회로

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6067269A (en) * 1997-12-31 2000-05-23 Samsung Electronics Co., Ltd. Semiconductor memory device capable of operating at a low power supply voltage

Also Published As

Publication number Publication date
CN100550185C (zh) 2009-10-14
DE10322733A1 (de) 2004-03-04
CN1937069A (zh) 2007-03-28
US6954103B2 (en) 2005-10-11
CN1937068A (zh) 2007-03-28
JP2003338178A (ja) 2003-11-28
CN100550184C (zh) 2009-10-14
KR100545422B1 (ko) 2006-01-24
KR20030090535A (ko) 2003-11-28
JP4386619B2 (ja) 2009-12-16
CN1461009A (zh) 2003-12-10
US20030214345A1 (en) 2003-11-20
TW200401292A (en) 2004-01-16
TWI222639B (en) 2004-10-21

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Granted publication date: 20090624

Termination date: 20110520