KR100545422B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100545422B1
KR100545422B1 KR1020030031801A KR20030031801A KR100545422B1 KR 100545422 B1 KR100545422 B1 KR 100545422B1 KR 1020030031801 A KR1020030031801 A KR 1020030031801A KR 20030031801 A KR20030031801 A KR 20030031801A KR 100545422 B1 KR100545422 B1 KR 100545422B1
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KR
South Korea
Prior art keywords
power supply
voltage
level
signal
circuit
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Expired - Fee Related
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KR1020030031801A
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English (en)
Korean (ko)
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KR20030090535A (ko
Inventor
야마우치다다아키
마츠모토쥰코
오카모토다케오
스와마코토
이치구치데츠이치로
요네타니히데키
나가사와츠토무
티안젱쳉
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20030090535A publication Critical patent/KR20030090535A/ko
Application granted granted Critical
Publication of KR100545422B1 publication Critical patent/KR100545422B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
KR1020030031801A 2002-05-20 2003-05-20 반도체 장치 Expired - Fee Related KR100545422B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00144869 2002-05-20
JP2002144869A JP4386619B2 (ja) 2002-05-20 2002-05-20 半導体装置

Publications (2)

Publication Number Publication Date
KR20030090535A KR20030090535A (ko) 2003-11-28
KR100545422B1 true KR100545422B1 (ko) 2006-01-24

Family

ID=29417087

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030031801A Expired - Fee Related KR100545422B1 (ko) 2002-05-20 2003-05-20 반도체 장치

Country Status (6)

Country Link
US (1) US6954103B2 (enExample)
JP (1) JP4386619B2 (enExample)
KR (1) KR100545422B1 (enExample)
CN (3) CN100505093C (enExample)
DE (1) DE10322733A1 (enExample)
TW (1) TWI222639B (enExample)

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JP4374254B2 (ja) * 2004-01-27 2009-12-02 Ｏｋｉセミコンダクタ株式会社 バイアス電圧発生回路
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JP2006279203A (ja) 2005-03-28 2006-10-12 Fujitsu Ltd レベル変換回路
JP4820571B2 (ja) * 2005-04-15 2011-11-24 ルネサスエレクトロニクス株式会社 半導体装置
KR100753048B1 (ko) 2005-09-05 2007-08-30 주식회사 하이닉스반도체 반도체 메모리 장치의 주변영역 전압 발생 장치
JP4391976B2 (ja) * 2005-09-16 2009-12-24 富士通株式会社 クロック分配回路
US8199600B2 (en) * 2005-09-28 2012-06-12 Hynix Semiconductor Inc. Voltage generator for peripheral circuit
JP2007095075A (ja) * 2005-09-29 2007-04-12 Hynix Semiconductor Inc 内部電圧生成装置
KR100818706B1 (ko) * 2006-01-09 2008-04-02 주식회사 하이닉스반도체 반도체 소자의 내부 전압 발생 장치
KR100771870B1 (ko) 2006-05-19 2007-11-01 삼성전자주식회사 반도체 메모리장치의 승압전압 검출회로 및 이를 제어하는방법
US7595687B2 (en) * 2006-07-31 2009-09-29 Wisconsin Alumni Research Foundation Apparatus and method for reducing EMI generated by a power conversion device
US7768756B2 (en) 2007-04-27 2010-08-03 Hewlett-Packard Development Company, L.P. Leakage current protection circuit
KR100892640B1 (ko) * 2007-05-10 2009-04-09 주식회사 하이닉스반도체 반도체 집적 회로
US7868605B1 (en) 2007-07-02 2011-01-11 Altera Corporation Mixed mode power regulator circuitry for memory elements
US7705659B1 (en) * 2007-07-02 2010-04-27 Altera Corporation Power regulator circuitry with power-on-reset control
JP2009081384A (ja) * 2007-09-27 2009-04-16 Nec Electronics Corp 半導体装置
KR100925368B1 (ko) * 2007-12-20 2009-11-09 주식회사 하이닉스반도체 센스앰프 전압 공급 회로 및 그의 구동 방법
TWI425520B (zh) * 2008-05-12 2014-02-01 Taiwan Semiconductor Mfg 用於記憶體元件之電源啟動／切斷序列機制
JP5211889B2 (ja) * 2008-06-25 2013-06-12 富士通株式会社 半導体集積回路
CN101639797B (zh) * 2008-07-30 2011-05-04 鸿富锦精密工业（深圳）有限公司 内存侦测电路
KR101559908B1 (ko) * 2009-01-20 2015-10-15 삼성전자주식회사 반도체 메모리 장치의 내부전압 발생회로
JP2010176742A (ja) * 2009-01-29 2010-08-12 Elpida Memory Inc 半導体装置及びデータ処理システム
US8054120B2 (en) * 2009-06-30 2011-11-08 Stmicroelectronics Design & Application Gmbh Integrated circuit operable in a standby mode
JP5512226B2 (ja) * 2009-10-27 2014-06-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2011233631A (ja) * 2010-04-26 2011-11-17 Elpida Memory Inc 半導体装置
KR101782137B1 (ko) * 2010-11-08 2017-09-27 삼성전자주식회사 파워 온 리셋 회로
JP5727211B2 (ja) * 2010-12-17 2015-06-03 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
CN102157193B (zh) * 2011-03-28 2013-04-17 钰创科技股份有限公司 存储器的电压调整器
JP2015050722A (ja) * 2013-09-04 2015-03-16 ソニー株式会社 信号出力回路および信号出力方法
CN104795087B (zh) * 2014-01-22 2017-08-25 中芯国际集成电路制造(上海)有限公司 用于读取数据的灵敏放大器及存储器
US9317051B2 (en) * 2014-02-06 2016-04-19 SK Hynix Inc. Internal voltage generation circuits
JP5733771B2 (ja) * 2014-06-17 2015-06-10 ラピスセミコンダクタ株式会社 半導体メモリ
KR102280433B1 (ko) * 2015-09-23 2021-07-22 삼성전자주식회사 전력 공급 회로 및 이를 포함하는 저장 장치
CN106680686A (zh) * 2016-12-29 2017-05-17 浙江大学 一种提高半导体器件皮秒级超快速电学特性测试精度的方法
US10700683B1 (en) * 2018-08-28 2020-06-30 Qualcomm Incorporated Dynamic power supply shifting
CN109946580B (zh) * 2019-04-09 2020-09-04 浙江大学 一种应用于半导体器件超高速实时表征的信号同步方法
JP6998981B2 (ja) * 2020-03-03 2022-01-18 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
CN113467565B (zh) * 2021-07-08 2025-05-30 海宁奕斯伟计算技术有限公司 驱动系统、驱动方法、计算机系统和可读介质
CN117938145B (zh) * 2024-03-22 2024-06-04 深圳安森德半导体有限公司 一种能够实现初态自动控制的电平转换电路

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JPH05120884A (ja) 1991-10-28 1993-05-18 Nec Corp 半導体集積回路
JP3239581B2 (ja) 1994-01-26 2001-12-17 富士通株式会社 半導体集積回路の製造方法及び半導体集積回路
JP3450091B2 (ja) 1995-04-06 2003-09-22 株式会社リコー 昇圧回路装置及び昇圧方法
JPH09274793A (ja) 1996-04-04 1997-10-21 Kawasaki Steel Corp ダイナミックランダムアクセスメモリ
JPH10199241A (ja) 1997-01-06 1998-07-31 Mitsubishi Electric Corp 半導体記憶装置
JPH10228768A (ja) 1997-02-14 1998-08-25 Mitsubishi Electric Corp 半導体記憶装置
KR100267011B1 (ko) * 1997-12-31 2000-10-02 윤종용 반도체 메모리 장치의 내부 전원 전압 발생 회로
JP3346273B2 (ja) 1998-04-24 2002-11-18 日本電気株式会社 ブースト回路および半導体記憶装置
JP2000021166A (ja) 1998-06-30 2000-01-21 Hitachi Ltd 昇圧回路
JP4368994B2 (ja) 1999-05-14 2009-11-18 株式会社ルネサステクノロジ 半導体装置
JP4053718B2 (ja) * 2000-09-07 2008-02-27 富士通株式会社 半導体記憶装置の内部電源供給回路及び半導体記憶装置の内部電源供給方法
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR100446297B1 (ko) * 2002-04-02 2004-08-30 삼성전자주식회사 외부 전압의 변화에 무관하게 안정된 출력 전압을발생하는 전압 발생회로
KR100456597B1 (ko) * 2002-07-16 2004-11-09 삼성전자주식회사 외부 전압 레벨에 따라 내부 전압을 선택적으로 발생하는반도체 메모리 장치 및 그 내부 전압 발생 회로

Also Published As

Publication number Publication date
CN100550185C (zh) 2009-10-14
DE10322733A1 (de) 2004-03-04
CN1937069A (zh) 2007-03-28
US6954103B2 (en) 2005-10-11
CN1937068A (zh) 2007-03-28
JP2003338178A (ja) 2003-11-28
CN100550184C (zh) 2009-10-14
KR20030090535A (ko) 2003-11-28
JP4386619B2 (ja) 2009-12-16
CN1461009A (zh) 2003-12-10
US20030214345A1 (en) 2003-11-20
CN100505093C (zh) 2009-06-24
TW200401292A (en) 2004-01-16
TWI222639B (en) 2004-10-21

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