TWI871801B - 顯示裝置及電子裝置 - Google Patents

顯示裝置及電子裝置 Download PDF

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Publication number
TWI871801B
TWI871801B TW112140023A TW112140023A TWI871801B TW I871801 B TWI871801 B TW I871801B TW 112140023 A TW112140023 A TW 112140023A TW 112140023 A TW112140023 A TW 112140023A TW I871801 B TWI871801 B TW I871801B
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Taiwan
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transistor
layer
conductive layer
region
semiconductor layer
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TW112140023A
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English (en)
Chinese (zh)
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TW202407445A (zh
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高橋圭
三宅博之
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日商半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0291—Details of output amplifiers or buffers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/08—Details of timing specific for flat panels, other than clock recovery
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving
    • G09G2330/023—Power management, e.g. power saving using energy recovery or conservation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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    • G09G2354/00—Aspects of interface with display user
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Optics & Photonics (AREA)
TW112140023A 2016-08-03 2017-07-21 顯示裝置及電子裝置 TWI871801B (zh)

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Application Number Priority Date Filing Date Title
JP2016-152394 2016-08-03
JP2016152394 2016-08-03

Publications (2)

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TW202407445A TW202407445A (zh) 2024-02-16
TWI871801B true TWI871801B (zh) 2025-02-01

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TW112140023A TWI871801B (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置
TW112119814A TWI867547B (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置
TW106124615A TWI771308B (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置
TW111123077A TWI805414B (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置
TW110123418A TWI782595B (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置
TW113150329A TW202533198A (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置

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TW112119814A TWI867547B (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置
TW106124615A TWI771308B (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置
TW111123077A TWI805414B (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置
TW110123418A TWI782595B (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置
TW113150329A TW202533198A (zh) 2016-08-03 2017-07-21 顯示裝置及電子裝置

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US (6) US10373983B2 (enExample)
JP (8) JP7060927B2 (enExample)
KR (8) KR102458660B1 (enExample)
DE (1) DE102017212741A1 (enExample)
TW (6) TWI871801B (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8736315B2 (en) * 2011-09-30 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102458660B1 (ko) * 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP2018049267A (ja) 2016-09-16 2018-03-29 株式会社半導体エネルギー研究所 表示システム、電子機器および表示方法
KR102774342B1 (ko) * 2017-02-07 2025-03-05 삼성디스플레이 주식회사 유기 발광 표시 장치
JP2018180110A (ja) * 2017-04-06 2018-11-15 株式会社ジャパンディスプレイ 表示装置
CN107863354A (zh) * 2017-10-20 2018-03-30 武汉华星光电技术有限公司 阵列基板及其制作方法
JP7186732B2 (ja) 2018-02-08 2022-12-09 株式会社半導体エネルギー研究所 表示装置
CN111937159A (zh) * 2018-03-28 2020-11-13 堺显示器制品株式会社 有机el显示装置及有机el显示装置的制造方法
US11094763B2 (en) 2018-03-28 2021-08-17 Sakai Display Products Corporation Organic EL device with alternately lined source drain electrodes
WO2019186808A1 (ja) * 2018-03-28 2019-10-03 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
JP6603826B1 (ja) * 2018-03-28 2019-11-06 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
US11404107B2 (en) * 2018-03-29 2022-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
JP6603831B1 (ja) * 2018-04-11 2019-11-06 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
CN120356411A (zh) 2018-05-17 2025-07-22 株式会社半导体能源研究所 显示装置及电子设备
JP7308655B2 (ja) * 2018-07-13 2023-07-14 株式会社半導体エネルギー研究所 表示装置、及び電子機器
KR20200023573A (ko) * 2018-08-23 2020-03-05 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
TWI677741B (zh) * 2018-11-12 2019-11-21 友達光電股份有限公司 顯示裝置
JP6865249B2 (ja) * 2019-05-15 2021-04-28 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
JP6694988B2 (ja) * 2019-05-15 2020-05-20 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
US11164894B2 (en) * 2019-10-16 2021-11-02 Tcl China Star Optoelectronics Technology Co., Ltd. Display panel and manufacturing method thereof
KR102762838B1 (ko) 2019-10-28 2025-02-04 엘지디스플레이 주식회사 발광 표시 패널
KR20210057448A (ko) * 2019-11-12 2021-05-21 엘지디스플레이 주식회사 발광 표시 패널
KR102835926B1 (ko) * 2019-12-24 2025-07-17 엘지디스플레이 주식회사 발광표시패널
CN111128028A (zh) * 2019-12-31 2020-05-08 武汉华星光电半导体显示技术有限公司 一种可弯折显示面板、显示装置及显示设备
TWI893073B (zh) 2020-03-20 2025-08-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR20220011243A (ko) * 2020-07-20 2022-01-28 삼성디스플레이 주식회사 표시 장치
JP7775218B2 (ja) 2020-12-06 2025-11-25 株式会社半導体エネルギー研究所 表示装置
JPWO2022190984A1 (enExample) * 2021-03-08 2022-09-15
KR20230169177A (ko) * 2021-04-22 2023-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN113921538A (zh) * 2021-09-30 2022-01-11 合肥视涯技术有限公司 显示面板、显示面板的驱动背板的制备方法及显示装置
US20240334741A1 (en) * 2021-10-11 2024-10-03 Sharp Display Technology Corporation Display device
KR20240093706A (ko) * 2021-10-22 2024-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR20240122458A (ko) 2021-12-08 2024-08-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 장치
JPWO2023248643A1 (enExample) 2022-06-23 2023-12-28
JPWO2024127199A1 (enExample) * 2022-12-16 2024-06-20
TW202445532A (zh) * 2023-01-11 2024-11-16 日商索尼半導體解決方案公司 顯示裝置及電子機器
WO2025153925A1 (ja) * 2024-01-17 2025-07-24 株式会社半導体エネルギー研究所 表示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201436177A (zh) * 2013-02-25 2014-09-16 Semiconductor Energy Lab 顯示裝置和電子裝置
TW201515213A (zh) * 2013-09-06 2015-04-16 半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
US20150243203A1 (en) * 2014-02-25 2015-08-27 Lg Display Co., Ltd. Display Having Selective Portions Driven with Adjustable Refresh Rate and Method of Driving the Same

Family Cites Families (192)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053878B1 (en) 1980-12-08 1985-08-14 Kabushiki Kaisha Toshiba Semiconductor memory device
JPH0612799B2 (ja) 1986-03-03 1994-02-16 三菱電機株式会社 積層型半導体装置およびその製造方法
JPS6324507U (enExample) 1986-07-30 1988-02-18
JPH0383690U (enExample) 1989-12-12 1991-08-26
JPH05299653A (ja) 1991-04-05 1993-11-12 Fuji Xerox Co Ltd 半導体装置及びその製造方法
JPH0529571A (ja) 1991-07-19 1993-02-05 Oki Electric Ind Co Ltd 半導体記憶装置およびその製造方法
JP2784615B2 (ja) 1991-10-16 1998-08-06 株式会社半導体エネルギー研究所 電気光学表示装置およびその駆動方法
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US6759680B1 (en) 1991-10-16 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Display device having thin film transistors
US7253440B1 (en) 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
JP2775040B2 (ja) 1991-10-29 1998-07-09 株式会社 半導体エネルギー研究所 電気光学表示装置およびその駆動方法
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
JPH103091A (ja) 1996-06-18 1998-01-06 Hoshiden Philips Display Kk 液晶表示素子
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US5770483A (en) 1996-10-08 1998-06-23 Advanced Micro Devices, Inc. Multi-level transistor fabrication method with high performance drain-to-gate connection
US6271542B1 (en) 1997-12-08 2001-08-07 International Business Machines Corporation Merged logic and memory combining thin film and bulk Si transistors
KR100333180B1 (ko) 1998-06-30 2003-06-19 주식회사 현대 디스플레이 테크놀로지 Tft-lcd제조방법
JP2001053164A (ja) 1999-08-04 2001-02-23 Sony Corp 半導体記憶装置
IT1314025B1 (it) 1999-11-10 2002-12-03 St Microelectronics Srl Processo per sigillare selettivamente elementi capacitoriferroelettrici compresi in celle di memorie non volatili integrate su
JP3735855B2 (ja) 2000-02-17 2006-01-18 日本電気株式会社 半導体集積回路装置およびその駆動方法
JP2002093924A (ja) 2000-09-20 2002-03-29 Sony Corp 半導体記憶装置
JP4306142B2 (ja) 2001-04-24 2009-07-29 株式会社日立製作所 画像表示装置及びその製造方法
JP2002368226A (ja) 2001-06-11 2002-12-20 Sharp Corp 半導体装置、半導体記憶装置及びその製造方法、並びに携帯情報機器
CN1219770C (zh) 2001-07-13 2005-09-21 朱景力 异喹啉的提纯方法
JP2003060060A (ja) 2001-08-21 2003-02-28 Fujitsu Ltd 半導体集積回路装置
JP4275336B2 (ja) 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1498955A4 (en) 2002-04-17 2008-02-20 Matsushita Electric Industrial Co Ltd SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US6787835B2 (en) 2002-06-11 2004-09-07 Hitachi, Ltd. Semiconductor memories
JP4314843B2 (ja) * 2003-03-05 2009-08-19 カシオ計算機株式会社 画像読取装置及び個人認証システム
US7915723B2 (en) 2004-01-29 2011-03-29 Casio Computer Co., Ltd. Transistor array, manufacturing method thereof and image processor
JP4401971B2 (ja) 2004-04-29 2010-01-20 三星モバイルディスプレイ株式會社 発光表示装置
JP4927321B2 (ja) 2004-06-22 2012-05-09 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
JP4466853B2 (ja) 2005-03-15 2010-05-26 セイコーエプソン株式会社 有機強誘電体メモリ及びその製造方法
JP4849817B2 (ja) 2005-04-08 2012-01-11 ルネサスエレクトロニクス株式会社 半導体記憶装置
WO2006118294A1 (en) 2005-04-27 2006-11-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
EP1777689B1 (en) 2005-10-18 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic equipment each having the same
JP5015473B2 (ja) 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタアレイ及びその製法
JP4839904B2 (ja) 2006-03-16 2011-12-21 セイコーエプソン株式会社 半導体装置、集積回路、及び電子機器
US7663165B2 (en) 2006-08-31 2010-02-16 Aptina Imaging Corporation Transparent-channel thin-film transistor-based pixels for high-performance image sensors
KR100829570B1 (ko) 2006-10-20 2008-05-14 삼성전자주식회사 크로스 포인트 메모리용 박막 트랜지스터 및 그 제조 방법
JP5116290B2 (ja) 2006-11-21 2013-01-09 キヤノン株式会社 薄膜トランジスタの製造方法
KR20080052107A (ko) 2006-12-07 2008-06-11 엘지전자 주식회사 산화물 반도체층을 구비한 박막 트랜지스터
JP5086625B2 (ja) 2006-12-15 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
GB2448174B (en) 2007-04-04 2009-12-09 Cambridge Display Tech Ltd Organic thin film transistors
JP5043499B2 (ja) 2007-05-02 2012-10-10 財団法人高知県産業振興センター 電子素子及び電子素子の製造方法
KR101402189B1 (ko) 2007-06-22 2014-06-02 삼성전자주식회사 Ｚｎ 산화물계 박막 트랜지스터 및 Ｚｎ 산화물의 식각용액
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
KR20090002841A (ko) 2007-07-04 2009-01-09 삼성전자주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 그 제조방법
US8049253B2 (en) 2007-07-11 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI353063B (en) 2007-07-27 2011-11-21 Au Optronics Corp Photo detector and method for fabricating the same
US8232598B2 (en) 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8044464B2 (en) 2007-09-21 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7982250B2 (en) 2007-09-21 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4759598B2 (ja) 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
TW200921226A (en) 2007-11-06 2009-05-16 Wintek Corp Panel structure and manufacture method thereof
JP5435857B2 (ja) 2007-11-07 2014-03-05 スパンション エルエルシー 半導体装置
JP5512078B2 (ja) 2007-11-22 2014-06-04 富士フイルム株式会社 画像形成装置
JP5213429B2 (ja) 2007-12-13 2013-06-19 キヤノン株式会社 電界効果型トランジスタ
JP5213458B2 (ja) 2008-01-08 2013-06-19 キヤノン株式会社 アモルファス酸化物及び電界効果型トランジスタ
KR101412761B1 (ko) 2008-01-18 2014-07-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
JP2009206508A (ja) 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
JP5121478B2 (ja) 2008-01-31 2013-01-16 株式会社ジャパンディスプレイウェスト 光センサー素子、撮像装置、電子機器、およびメモリー素子
JP4555358B2 (ja) 2008-03-24 2010-09-29 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
JP5253872B2 (ja) 2008-04-17 2013-07-31 株式会社東芝 半導体集積回路装置
KR101496148B1 (ko) 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
JP2010003910A (ja) 2008-06-20 2010-01-07 Toshiba Mobile Display Co Ltd 表示素子
KR100963026B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR100963027B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5345456B2 (ja) 2008-08-14 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタ
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
EP2202802B1 (en) 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
KR101100999B1 (ko) 2009-01-13 2011-12-29 삼성모바일디스플레이주식회사 씨모스 박막트랜지스터 및 그 제조방법과 이를 구비한 유기전계발광 표시장치
KR101048965B1 (ko) 2009-01-22 2011-07-12 삼성모바일디스플레이주식회사 유기 전계발광 표시장치
KR101065407B1 (ko) 2009-08-25 2011-09-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101073542B1 (ko) 2009-09-03 2011-10-17 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
EP2491585B1 (en) 2009-10-21 2020-01-22 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
KR101969279B1 (ko) 2009-10-29 2019-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
SG10201910510UA (en) 2009-10-29 2020-01-30 Semiconductor Energy Lab Semiconductor device
KR101788521B1 (ko) 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102598249B (zh) 2009-10-30 2014-11-05 株式会社半导体能源研究所 半导体装置
KR20250075719A (ko) 2009-10-30 2025-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101499494B1 (ko) 2009-10-30 2015-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
WO2011055625A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
EP2497111B1 (en) 2009-11-06 2016-03-30 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
CN102612749B (zh) 2009-11-06 2015-04-01 株式会社半导体能源研究所 半导体器件
WO2011055669A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102072118B1 (ko) 2009-11-13 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
KR101893332B1 (ko) 2009-11-13 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101708607B1 (ko) 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101448908B1 (ko) 2009-11-20 2014-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
MY166309A (en) 2009-11-20 2018-06-25 Semiconductor Energy Lab Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
CN102668063B (zh) 2009-11-20 2015-02-18 株式会社半导体能源研究所 半导体装置
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065183A1 (en) 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
KR101911382B1 (ko) 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5491835B2 (ja) 2009-12-02 2014-05-14 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 画素回路および表示装置
CN102648526B (zh) 2009-12-04 2015-08-05 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011070981A1 (ja) 2009-12-09 2011-06-16 シャープ株式会社 半導体装置およびその製造方法
CN102714180B (zh) 2009-12-11 2015-03-25 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路以及使用它们的半导体器件
CN102656683B (zh) 2009-12-11 2015-02-11 株式会社半导体能源研究所 半导体装置
WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105789204B (zh) 2009-12-25 2021-11-02 株式会社半导体能源研究所 半导体装置
CN103985760B (zh) 2009-12-25 2017-07-18 株式会社半导体能源研究所 半导体装置
KR101842413B1 (ko) 2009-12-28 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102804603B (zh) 2010-01-20 2015-07-15 株式会社半导体能源研究所 信号处理电路及其驱动方法
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011096270A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096264A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
WO2011102205A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011187506A (ja) 2010-03-04 2011-09-22 Sony Corp 薄膜トランジスタおよびその製造方法、並びに表示装置
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101840797B1 (ko) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치
JP5174988B2 (ja) 2010-04-07 2013-04-03 シャープ株式会社 回路基板および表示装置
JP5275515B2 (ja) 2010-04-30 2013-08-28 シャープ株式会社 回路基板および表示装置
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI438868B (zh) 2010-07-30 2014-05-21 Au Optronics Corp 互補金氧半電晶體及其製作方法
TWI605549B (zh) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
DE112011102837B4 (de) 2010-08-27 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Speichereinrichtung und Halbleitereinrichtung mit Doppelgate und Oxidhalbleiter
TWI670711B (zh) 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102122620A (zh) 2011-01-18 2011-07-13 北京大学深圳研究生院 一种自对准薄膜晶体管的制作方法
TWI567736B (zh) 2011-04-08 2017-01-21 半導體能源研究所股份有限公司 記憶體元件及信號處理電路
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
KR102760694B1 (ko) 2011-05-13 2025-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
SG2014013833A (en) 2011-06-24 2014-10-30 Sharp Kk Display device and method for manufacturing same
JP5795893B2 (ja) 2011-07-07 2015-10-14 株式会社Ｊｏｌｅｄ 表示装置、表示素子、及び、電子機器
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
JP6034048B2 (ja) * 2012-04-23 2016-11-30 株式会社半導体エネルギー研究所 表示装置、電子機器
WO2014063116A2 (en) 2012-10-18 2014-04-24 Ikanos Communications, Inc. Method and apparatus for cancelling impulse noise in dsl systems
TWI600157B (zh) 2012-11-16 2017-09-21 半導體能源研究所股份有限公司 半導體裝置
US9564478B2 (en) 2013-08-26 2017-02-07 Apple Inc. Liquid crystal displays with oxide-based thin-film transistors
US9818765B2 (en) 2013-08-26 2017-11-14 Apple Inc. Displays with silicon and semiconducting oxide thin-film transistors
JP6101357B2 (ja) 2013-10-09 2017-03-22 シャープ株式会社 半導体装置およびその製造方法
US9734756B2 (en) 2013-10-18 2017-08-15 Apple Inc. Organic light emitting diode displays with reduced leakage current
KR102227474B1 (ko) 2013-11-05 2021-03-15 삼성디스플레이 주식회사 박막트랜지스터 어레이 기판, 유기발광표시장치 및 박막트랜지스터 어레이 기판의 제조 방법
KR102273443B1 (ko) 2013-12-05 2021-07-07 엘지디스플레이 주식회사 유기전계 발광소자
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102325158B1 (ko) 2014-01-30 2021-11-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법
KR102235597B1 (ko) 2014-02-19 2021-04-05 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 이의 제조 방법
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
KR102279392B1 (ko) * 2014-02-24 2021-07-21 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
KR102397873B1 (ko) * 2014-02-24 2022-05-16 엘지디스플레이 주식회사 표시장치
KR102346544B1 (ko) * 2014-02-24 2022-01-05 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
US9881986B2 (en) 2014-02-24 2018-01-30 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9691799B2 (en) 2014-02-24 2017-06-27 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
JP6518890B2 (ja) 2014-03-31 2019-05-29 株式会社Ｊｏｌｅｄ 表示装置および電子機器
US9336709B2 (en) 2014-04-25 2016-05-10 Apple Inc. Displays with overlapping light-emitting diodes and gate drivers
US10073571B2 (en) * 2014-05-02 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor and touch panel including capacitor
JP2015225104A (ja) 2014-05-26 2015-12-14 株式会社ジャパンディスプレイ 表示装置
KR20160004936A (ko) * 2014-07-04 2016-01-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 전자 기기
US10147747B2 (en) 2014-08-21 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
CN105390504B (zh) 2014-08-29 2019-02-01 乐金显示有限公司 薄膜晶体管基板及使用它的显示装置
US9543370B2 (en) 2014-09-24 2017-01-10 Apple Inc. Silicon and semiconducting oxide thin-film transistor displays
US9601517B2 (en) 2014-10-01 2017-03-21 Apple Inc. Hybrid pixel control circuits for light-emitting diode display
JP2016110075A (ja) 2014-10-03 2016-06-20 株式会社半導体エネルギー研究所 発光装置、モジュール、及び電子機器
KR102226236B1 (ko) 2014-10-13 2021-03-11 엘지디스플레이 주식회사 유기 발광 표시 장치
JP6633346B2 (ja) * 2014-10-31 2020-01-22 株式会社半導体エネルギー研究所 表示装置
JP6587497B2 (ja) 2014-10-31 2019-10-09 株式会社半導体エネルギー研究所 半導体装置
US9397124B2 (en) * 2014-12-03 2016-07-19 Apple Inc. Organic light-emitting diode display with double gate transistors
KR101658716B1 (ko) 2014-12-31 2016-09-30 엘지디스플레이 주식회사 표시 장치
JP6474275B2 (ja) 2015-02-19 2019-02-27 株式会社ディスコ 加工装置
US9685469B2 (en) 2015-04-03 2017-06-20 Apple Inc. Display with semiconducting oxide and polysilicon transistors
US10020354B2 (en) 2015-04-17 2018-07-10 Apple Inc. Organic light-emitting diode displays with silicon and semiconducting oxide thin-film transistors
KR102326170B1 (ko) 2015-04-20 2021-11-17 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR102408898B1 (ko) 2015-06-19 2022-06-16 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
US11733807B2 (en) 2015-09-25 2023-08-22 Apple Inc. Light sensing display
KR102454087B1 (ko) 2015-10-27 2022-10-13 엘지디스플레이 주식회사 박막 트랜지스터 기판
US10121430B2 (en) 2015-11-16 2018-11-06 Apple Inc. Displays with series-connected switching transistors
KR102424108B1 (ko) 2015-11-26 2022-07-25 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
KR102519942B1 (ko) 2015-11-26 2023-04-11 엘지디스플레이 주식회사 유기발광 다이오드 표시장치용 박막 트랜지스터 기판
US9818344B2 (en) 2015-12-04 2017-11-14 Apple Inc. Display with light-emitting diodes
KR102485374B1 (ko) 2015-12-31 2023-01-04 엘지디스플레이 주식회사 디스플레이 장치
JP2017162852A (ja) 2016-03-07 2017-09-14 株式会社ジャパンディスプレイ 半導体装置および表示装置
JP2017174946A (ja) 2016-03-23 2017-09-28 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP6673731B2 (ja) 2016-03-23 2020-03-25 株式会社ジャパンディスプレイ 表示装置及びその製造方法
JP6827270B2 (ja) 2016-03-28 2021-02-10 株式会社ジャパンディスプレイ 半導体装置の作製方法
JP6668160B2 (ja) 2016-05-06 2020-03-18 株式会社ジャパンディスプレイ 表示装置の製造方法
JP6725317B2 (ja) 2016-05-19 2020-07-15 株式会社ジャパンディスプレイ 表示装置
JP2017224676A (ja) 2016-06-14 2017-12-21 株式会社ジャパンディスプレイ 半導体装置及び表示装置
KR20180004370A (ko) 2016-07-01 2018-01-11 삼성디스플레이 주식회사 화소 및 스테이지 회로와 이를 가지는 유기전계발광 표시장치
JP6751613B2 (ja) 2016-07-15 2020-09-09 株式会社ジャパンディスプレイ 表示装置
JP2018013567A (ja) 2016-07-20 2018-01-25 株式会社ジャパンディスプレイ 表示装置
KR102458660B1 (ko) * 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201436177A (zh) * 2013-02-25 2014-09-16 Semiconductor Energy Lab 顯示裝置和電子裝置
TW201515213A (zh) * 2013-09-06 2015-04-16 半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
US20150243203A1 (en) * 2014-02-25 2015-08-27 Lg Display Co., Ltd. Display Having Selective Portions Driven with Adjustable Refresh Rate and Method of Driving the Same

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