KR102458660B1 - 표시 장치 및 전자 기기 - Google Patents
표시 장치 및 전자 기기 Download PDFInfo
- Publication number
- KR102458660B1 KR102458660B1 KR1020170091315A KR20170091315A KR102458660B1 KR 102458660 B1 KR102458660 B1 KR 102458660B1 KR 1020170091315 A KR1020170091315 A KR 1020170091315A KR 20170091315 A KR20170091315 A KR 20170091315A KR 102458660 B1 KR102458660 B1 KR 102458660B1
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- South Korea
- Prior art keywords
- transistor
- layer
- insulating layer
- display unit
- display
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H01L27/156—
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
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- H01L29/786—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
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- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0291—Details of output amplifiers or buffers arranged for use in a driving circuit
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/08—Details of timing specific for flat panels, other than clock recovery
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
- G09G2330/023—Power management, e.g. power saving using energy recovery or conservation
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2354/00—Aspects of interface with display user
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3275—Details of drivers for data electrodes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Electrophonic Musical Instruments (AREA)
- Optics & Photonics (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020210082151A KR102457419B1 (ko) | 2016-08-03 | 2021-06-24 | 표시 장치 및 전자 기기 |
| KR1020220135552A KR102505809B1 (ko) | 2016-08-03 | 2022-10-20 | 표시 장치 및 전자 기기 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2016-152394 | 2016-08-03 | ||
| JP2016152394 | 2016-08-03 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020210082151A Division KR102457419B1 (ko) | 2016-08-03 | 2021-06-24 | 표시 장치 및 전자 기기 |
| KR1020220135552A Division KR102505809B1 (ko) | 2016-08-03 | 2022-10-20 | 표시 장치 및 전자 기기 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180015574A KR20180015574A (ko) | 2018-02-13 |
| KR102458660B1 true KR102458660B1 (ko) | 2022-10-26 |
Family
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Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170091315A Active KR102458660B1 (ko) | 2016-08-03 | 2017-07-19 | 표시 장치 및 전자 기기 |
| KR1020210082151A Active KR102457419B1 (ko) | 2016-08-03 | 2021-06-24 | 표시 장치 및 전자 기기 |
| KR1020220135552A Active KR102505809B1 (ko) | 2016-08-03 | 2022-10-20 | 표시 장치 및 전자 기기 |
| KR1020230025997A Active KR102548242B1 (ko) | 2016-08-03 | 2023-02-27 | 표시 장치 및 전자 기기 |
| KR1020230080258A Active KR102586023B1 (ko) | 2016-08-03 | 2023-06-22 | 표시 장치 및 전자 기기 |
| KR1020230130722A Active KR102631185B1 (ko) | 2016-08-03 | 2023-09-27 | 표시 장치 및 전자 기기 |
| KR1020230142853A Active KR102839889B1 (ko) | 2016-08-03 | 2023-10-24 | 표시 장치 및 전자 기기 |
| KR1020250100467A Pending KR20250120939A (ko) | 2016-08-03 | 2025-07-24 | 표시 장치 및 전자 기기 |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020210082151A Active KR102457419B1 (ko) | 2016-08-03 | 2021-06-24 | 표시 장치 및 전자 기기 |
| KR1020220135552A Active KR102505809B1 (ko) | 2016-08-03 | 2022-10-20 | 표시 장치 및 전자 기기 |
| KR1020230025997A Active KR102548242B1 (ko) | 2016-08-03 | 2023-02-27 | 표시 장치 및 전자 기기 |
| KR1020230080258A Active KR102586023B1 (ko) | 2016-08-03 | 2023-06-22 | 표시 장치 및 전자 기기 |
| KR1020230130722A Active KR102631185B1 (ko) | 2016-08-03 | 2023-09-27 | 표시 장치 및 전자 기기 |
| KR1020230142853A Active KR102839889B1 (ko) | 2016-08-03 | 2023-10-24 | 표시 장치 및 전자 기기 |
| KR1020250100467A Pending KR20250120939A (ko) | 2016-08-03 | 2025-07-24 | 표시 장치 및 전자 기기 |
Country Status (5)
| Country | Link |
|---|---|
| US (6) | US10373983B2 (enExample) |
| JP (8) | JP7060927B2 (enExample) |
| KR (8) | KR102458660B1 (enExample) |
| DE (1) | DE102017212741A1 (enExample) |
| TW (6) | TWI805414B (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8736315B2 (en) * | 2011-09-30 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102458660B1 (ko) * | 2016-08-03 | 2022-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| JP2018049267A (ja) | 2016-09-16 | 2018-03-29 | 株式会社半導体エネルギー研究所 | 表示システム、電子機器および表示方法 |
| KR102774342B1 (ko) * | 2017-02-07 | 2025-03-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP2018180110A (ja) * | 2017-04-06 | 2018-11-15 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN107863354A (zh) * | 2017-10-20 | 2018-03-30 | 武汉华星光电技术有限公司 | 阵列基板及其制作方法 |
| US11417687B2 (en) | 2018-02-08 | 2022-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| WO2019186805A1 (ja) * | 2018-03-28 | 2019-10-03 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
| JP6530155B1 (ja) * | 2018-03-28 | 2019-06-12 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及び有機el表示装置の製造方法 |
| JP6606309B1 (ja) * | 2018-03-28 | 2019-11-13 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
| WO2019186809A1 (ja) * | 2018-03-28 | 2019-10-03 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及び有機el表示装置の製造方法 |
| CN119380776A (zh) * | 2018-03-29 | 2025-01-28 | 株式会社半导体能源研究所 | 存储装置及电子设备 |
| JP6603831B1 (ja) * | 2018-04-11 | 2019-11-06 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及び有機el表示装置の製造方法 |
| US11423844B2 (en) * | 2018-05-17 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| JP7308655B2 (ja) * | 2018-07-13 | 2023-07-14 | 株式会社半導体エネルギー研究所 | 表示装置、及び電子機器 |
| KR20200023573A (ko) * | 2018-08-23 | 2020-03-05 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| TWI677741B (zh) * | 2018-11-12 | 2019-11-21 | 友達光電股份有限公司 | 顯示裝置 |
| JP6865249B2 (ja) * | 2019-05-15 | 2021-04-28 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及び有機el表示装置の製造方法 |
| JP6694988B2 (ja) * | 2019-05-15 | 2020-05-20 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及び有機el表示装置の製造方法 |
| US11164894B2 (en) * | 2019-10-16 | 2021-11-02 | Tcl China Star Optoelectronics Technology Co., Ltd. | Display panel and manufacturing method thereof |
| KR102762838B1 (ko) | 2019-10-28 | 2025-02-04 | 엘지디스플레이 주식회사 | 발광 표시 패널 |
| KR20210057448A (ko) * | 2019-11-12 | 2021-05-21 | 엘지디스플레이 주식회사 | 발광 표시 패널 |
| KR102835926B1 (ko) | 2019-12-24 | 2025-07-17 | 엘지디스플레이 주식회사 | 발광표시패널 |
| CN111128028A (zh) * | 2019-12-31 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | 一种可弯折显示面板、显示装置及显示设备 |
| TWI893073B (zh) | 2020-03-20 | 2025-08-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| KR20220011243A (ko) * | 2020-07-20 | 2022-01-28 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR20230112706A (ko) | 2020-12-06 | 2023-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 보정 시스템 |
| WO2022190984A1 (ja) * | 2021-03-08 | 2022-09-15 | キヤノン株式会社 | 半導体装置および機器 |
| KR20230169177A (ko) | 2021-04-22 | 2023-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| CN113921538A (zh) * | 2021-09-30 | 2022-01-11 | 合肥视涯技术有限公司 | 显示面板、显示面板的驱动背板的制备方法及显示装置 |
| WO2023062696A1 (ja) * | 2021-10-11 | 2023-04-20 | シャープディスプレイテクノロジー株式会社 | 表示装置 |
| WO2023067456A1 (ja) * | 2021-10-22 | 2023-04-27 | 株式会社半導体エネルギー研究所 | 表示装置、及び電子機器 |
| US12449898B2 (en) | 2021-12-08 | 2025-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| WO2023248643A1 (ja) * | 2022-06-23 | 2023-12-28 | ソニーグループ株式会社 | 表示装置及び電子機器 |
| WO2024127199A1 (ja) * | 2022-12-16 | 2024-06-20 | 株式会社半導体エネルギー研究所 | 電子機器 |
| CN120239878A (zh) * | 2023-01-11 | 2025-07-01 | 索尼半导体解决方案公司 | 显示装置及电子装置 |
| WO2025153925A1 (ja) * | 2024-01-17 | 2025-07-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016048385A1 (en) * | 2014-09-24 | 2016-03-31 | Apple Inc. | Silicon and semiconducting oxide thin-film transistor displays |
| JP2016091027A (ja) * | 2014-10-31 | 2016-05-23 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール及び電子機器 |
| US20160163745A1 (en) * | 2014-12-03 | 2016-06-09 | Apple Inc. | Organic Light-Emitting Diode Display With Double Gate Transistors |
Family Cites Families (192)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3171836D1 (en) | 1980-12-08 | 1985-09-19 | Toshiba Kk | Semiconductor memory device |
| JPH0612799B2 (ja) | 1986-03-03 | 1994-02-16 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| JPS6324507U (enExample) | 1986-07-30 | 1988-02-18 | ||
| JPH0383690U (enExample) | 1989-12-12 | 1991-08-26 | ||
| JPH05299653A (ja) | 1991-04-05 | 1993-11-12 | Fuji Xerox Co Ltd | 半導体装置及びその製造方法 |
| JPH0529571A (ja) | 1991-07-19 | 1993-02-05 | Oki Electric Ind Co Ltd | 半導体記憶装置およびその製造方法 |
| US7071910B1 (en) | 1991-10-16 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and method of driving and manufacturing the same |
| US7253440B1 (en) | 1991-10-16 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least first and second thin film transistors |
| US6759680B1 (en) | 1991-10-16 | 2004-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device having thin film transistors |
| JP2784615B2 (ja) | 1991-10-16 | 1998-08-06 | 株式会社半導体エネルギー研究所 | 電気光学表示装置およびその駆動方法 |
| JP2775040B2 (ja) | 1991-10-29 | 1998-07-09 | 株式会社 半導体エネルギー研究所 | 電気光学表示装置およびその駆動方法 |
| TW299897U (en) | 1993-11-05 | 1997-03-01 | Semiconductor Energy Lab | A semiconductor integrated circuit |
| JPH103091A (ja) | 1996-06-18 | 1998-01-06 | Hoshiden Philips Display Kk | 液晶表示素子 |
| JP4103968B2 (ja) | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
| US5770483A (en) | 1996-10-08 | 1998-06-23 | Advanced Micro Devices, Inc. | Multi-level transistor fabrication method with high performance drain-to-gate connection |
| US6271542B1 (en) | 1997-12-08 | 2001-08-07 | International Business Machines Corporation | Merged logic and memory combining thin film and bulk Si transistors |
| KR100333180B1 (ko) | 1998-06-30 | 2003-06-19 | 주식회사 현대 디스플레이 테크놀로지 | Tft-lcd제조방법 |
| JP2001053164A (ja) | 1999-08-04 | 2001-02-23 | Sony Corp | 半導体記憶装置 |
| IT1314025B1 (it) | 1999-11-10 | 2002-12-03 | St Microelectronics Srl | Processo per sigillare selettivamente elementi capacitoriferroelettrici compresi in celle di memorie non volatili integrate su |
| JP3735855B2 (ja) | 2000-02-17 | 2006-01-18 | 日本電気株式会社 | 半導体集積回路装置およびその駆動方法 |
| JP2002093924A (ja) | 2000-09-20 | 2002-03-29 | Sony Corp | 半導体記憶装置 |
| JP4306142B2 (ja) | 2001-04-24 | 2009-07-29 | 株式会社日立製作所 | 画像表示装置及びその製造方法 |
| JP2002368226A (ja) | 2001-06-11 | 2002-12-20 | Sharp Corp | 半導体装置、半導体記憶装置及びその製造方法、並びに携帯情報機器 |
| CN1219770C (zh) | 2001-07-13 | 2005-09-21 | 朱景力 | 异喹啉的提纯方法 |
| JP2003060060A (ja) | 2001-08-21 | 2003-02-28 | Fujitsu Ltd | 半導体集積回路装置 |
| JP4275336B2 (ja) | 2001-11-16 | 2009-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN100405612C (zh) | 2002-04-17 | 2008-07-23 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| US7189992B2 (en) | 2002-05-21 | 2007-03-13 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures having a transparent channel |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| US6787835B2 (en) | 2002-06-11 | 2004-09-07 | Hitachi, Ltd. | Semiconductor memories |
| JP4314843B2 (ja) * | 2003-03-05 | 2009-08-19 | カシオ計算機株式会社 | 画像読取装置及び個人認証システム |
| KR100685239B1 (ko) | 2004-01-29 | 2007-02-22 | 가시오게산키 가부시키가이샤 | 트랜지스터어레이 및 그 제조방법 및 화상처리장치 |
| JP4401971B2 (ja) | 2004-04-29 | 2010-01-20 | 三星モバイルディスプレイ株式會社 | 発光表示装置 |
| JP4927321B2 (ja) | 2004-06-22 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| JP4466853B2 (ja) | 2005-03-15 | 2010-05-26 | セイコーエプソン株式会社 | 有機強誘電体メモリ及びその製造方法 |
| JP4849817B2 (ja) | 2005-04-08 | 2012-01-11 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| WO2006118294A1 (en) | 2005-04-27 | 2006-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP4560502B2 (ja) | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| EP1777689B1 (en) | 2005-10-18 | 2016-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic equipment each having the same |
| JP5015473B2 (ja) | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタアレイ及びその製法 |
| JP4839904B2 (ja) | 2006-03-16 | 2011-12-21 | セイコーエプソン株式会社 | 半導体装置、集積回路、及び電子機器 |
| US7663165B2 (en) | 2006-08-31 | 2010-02-16 | Aptina Imaging Corporation | Transparent-channel thin-film transistor-based pixels for high-performance image sensors |
| KR100829570B1 (ko) | 2006-10-20 | 2008-05-14 | 삼성전자주식회사 | 크로스 포인트 메모리용 박막 트랜지스터 및 그 제조 방법 |
| JP5116290B2 (ja) | 2006-11-21 | 2013-01-09 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
| KR20080052107A (ko) | 2006-12-07 | 2008-06-11 | 엘지전자 주식회사 | 산화물 반도체층을 구비한 박막 트랜지스터 |
| JP5086625B2 (ja) | 2006-12-15 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| GB2448174B (en) | 2007-04-04 | 2009-12-09 | Cambridge Display Tech Ltd | Organic thin film transistors |
| JP5043499B2 (ja) | 2007-05-02 | 2012-10-10 | 財団法人高知県産業振興センター | 電子素子及び電子素子の製造方法 |
| KR101402189B1 (ko) | 2007-06-22 | 2014-06-02 | 삼성전자주식회사 | Zn 산화물계 박막 트랜지스터 및 Zn 산화물의 식각용액 |
| US8354674B2 (en) | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
| KR20090002841A (ko) | 2007-07-04 | 2009-01-09 | 삼성전자주식회사 | 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 그 제조방법 |
| US8049253B2 (en) | 2007-07-11 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI353063B (en) | 2007-07-27 | 2011-11-21 | Au Optronics Corp | Photo detector and method for fabricating the same |
| US8232598B2 (en) | 2007-09-20 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US7982250B2 (en) | 2007-09-21 | 2011-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8044464B2 (en) | 2007-09-21 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4759598B2 (ja) | 2007-09-28 | 2011-08-31 | キヤノン株式会社 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
| TW200921226A (en) | 2007-11-06 | 2009-05-16 | Wintek Corp | Panel structure and manufacture method thereof |
| JP5435857B2 (ja) | 2007-11-07 | 2014-03-05 | スパンション エルエルシー | 半導体装置 |
| JP5512078B2 (ja) | 2007-11-22 | 2014-06-04 | 富士フイルム株式会社 | 画像形成装置 |
| JP5213429B2 (ja) | 2007-12-13 | 2013-06-19 | キヤノン株式会社 | 電界効果型トランジスタ |
| JP5213458B2 (ja) | 2008-01-08 | 2013-06-19 | キヤノン株式会社 | アモルファス酸化物及び電界効果型トランジスタ |
| KR101412761B1 (ko) | 2008-01-18 | 2014-07-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| JP2009206508A (ja) | 2008-01-31 | 2009-09-10 | Canon Inc | 薄膜トランジスタ及び表示装置 |
| JP5121478B2 (ja) | 2008-01-31 | 2013-01-16 | 株式会社ジャパンディスプレイウェスト | 光センサー素子、撮像装置、電子機器、およびメモリー素子 |
| JP4555358B2 (ja) | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
| JP5253872B2 (ja) | 2008-04-17 | 2013-07-31 | 株式会社東芝 | 半導体集積回路装置 |
| KR101496148B1 (ko) | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
| JP2010003910A (ja) | 2008-06-20 | 2010-01-07 | Toshiba Mobile Display Co Ltd | 表示素子 |
| KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| JP5345456B2 (ja) | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
| JP5781720B2 (ja) | 2008-12-15 | 2015-09-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| EP2202802B1 (en) | 2008-12-24 | 2012-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| KR101100999B1 (ko) | 2009-01-13 | 2011-12-29 | 삼성모바일디스플레이주식회사 | 씨모스 박막트랜지스터 및 그 제조방법과 이를 구비한 유기전계발광 표시장치 |
| KR101048965B1 (ko) * | 2009-01-22 | 2011-07-12 | 삼성모바일디스플레이주식회사 | 유기 전계발광 표시장치 |
| KR101065407B1 (ko) | 2009-08-25 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR101073542B1 (ko) | 2009-09-03 | 2011-10-17 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| CN103794612B (zh) | 2009-10-21 | 2018-09-07 | 株式会社半导体能源研究所 | 半导体装置 |
| SG10201406934WA (en) | 2009-10-29 | 2014-11-27 | Semiconductor Energy Lab | Semiconductor device |
| KR20140061553A (ko) | 2009-10-29 | 2014-05-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| SG10201903542TA (en) | 2009-10-30 | 2019-05-30 | Semiconductor Energy Lab | Semiconductor device |
| KR101293262B1 (ko) | 2009-10-30 | 2013-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101752518B1 (ko) | 2009-10-30 | 2017-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP2494692B1 (en) | 2009-10-30 | 2016-11-23 | Semiconductor Energy Laboratory Co. Ltd. | Logic circuit and semiconductor device |
| KR101761432B1 (ko) | 2009-11-06 | 2017-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101707159B1 (ko) | 2009-11-06 | 2017-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101952065B1 (ko) * | 2009-11-06 | 2019-02-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 동작 방법 |
| CN104600074A (zh) | 2009-11-06 | 2015-05-06 | 株式会社半导体能源研究所 | 半导体装置 |
| KR102188443B1 (ko) | 2009-11-13 | 2020-12-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| WO2011058934A1 (en) | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| KR101922849B1 (ko) | 2009-11-20 | 2018-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102451852B1 (ko) | 2009-11-20 | 2022-10-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011062068A1 (en) | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011062067A1 (en) | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101823861B1 (ko) | 2009-11-20 | 2018-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치 |
| WO2011065183A1 (en) | 2009-11-24 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including memory cell |
| WO2011065258A1 (en) | 2009-11-27 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5491835B2 (ja) * | 2009-12-02 | 2014-05-14 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 画素回路および表示装置 |
| KR20180077332A (ko) | 2009-12-04 | 2018-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| EP2511896B1 (en) | 2009-12-09 | 2019-05-08 | Sharp Kabushiki Kaisha | Semiconductor device and method for producing same |
| IN2012DN04871A (enExample) | 2009-12-11 | 2015-09-25 | Semiconductor Energy Laoboratory Co Ltd | |
| KR101770976B1 (ko) | 2009-12-11 | 2017-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102652356B (zh) | 2009-12-18 | 2016-02-17 | 株式会社半导体能源研究所 | 半导体装置 |
| KR102167820B1 (ko) | 2009-12-25 | 2020-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 장치 |
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101842413B1 (ko) | 2009-12-28 | 2018-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP2526619B1 (en) | 2010-01-20 | 2016-03-23 | Semiconductor Energy Laboratory Co. Ltd. | Signal processing circuit and method for driving the same |
| WO2011096153A1 (en) * | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR101921618B1 (ko) | 2010-02-05 | 2018-11-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
| KR101822962B1 (ko) | 2010-02-05 | 2018-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102049472B1 (ko) | 2010-02-19 | 2019-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2011187506A (ja) | 2010-03-04 | 2011-09-22 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| WO2011114905A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| WO2011114868A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8581257B2 (en) | 2010-04-07 | 2013-11-12 | Sharp Kabushiki Kaisha | Circuit board and display device |
| WO2011135908A1 (ja) | 2010-04-30 | 2011-11-03 | シャープ株式会社 | 回路基板および表示装置 |
| WO2012002186A1 (en) | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI438868B (zh) | 2010-07-30 | 2014-05-21 | Au Optronics Corp | 互補金氧半電晶體及其製作方法 |
| TWI688047B (zh) | 2010-08-06 | 2020-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US8422272B2 (en) | 2010-08-06 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| CN103081092B (zh) | 2010-08-27 | 2016-11-09 | 株式会社半导体能源研究所 | 存储器件及半导体器件 |
| TWI539453B (zh) | 2010-09-14 | 2016-06-21 | 半導體能源研究所股份有限公司 | 記憶體裝置和半導體裝置 |
| US9443984B2 (en) | 2010-12-28 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN102122620A (zh) | 2011-01-18 | 2011-07-13 | 北京大学深圳研究生院 | 一种自对准薄膜晶体管的制作方法 |
| TWI567736B (zh) | 2011-04-08 | 2017-01-21 | 半導體能源研究所股份有限公司 | 記憶體元件及信號處理電路 |
| US9111795B2 (en) | 2011-04-29 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with capacitor connected to memory element through oxide semiconductor film |
| WO2012157186A1 (en) | 2011-05-13 | 2012-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| WO2012176422A1 (ja) | 2011-06-24 | 2012-12-27 | シャープ株式会社 | 表示装置及びその製造方法 |
| JP5795893B2 (ja) * | 2011-07-07 | 2015-10-14 | 株式会社Joled | 表示装置、表示素子、及び、電子機器 |
| US10002968B2 (en) | 2011-12-14 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
| US9324449B2 (en) | 2012-03-28 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device |
| JP6034048B2 (ja) * | 2012-04-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
| JP2016500966A (ja) | 2012-10-18 | 2016-01-14 | イカノス・コミュニケーションズ・インコーポレイテッドIkanos Communications,Inc. | Dslシステムにおいてインパルスノイズをキャンセルするための方法および装置 |
| TWI661553B (zh) * | 2012-11-16 | 2019-06-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI611566B (zh) | 2013-02-25 | 2018-01-11 | 半導體能源研究所股份有限公司 | 顯示裝置和電子裝置 |
| US9818765B2 (en) | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
| US9564478B2 (en) | 2013-08-26 | 2017-02-07 | Apple Inc. | Liquid crystal displays with oxide-based thin-film transistors |
| TWI794098B (zh) | 2013-09-06 | 2023-02-21 | 日商半導體能源研究所股份有限公司 | 發光裝置以及發光裝置的製造方法 |
| JP6101357B2 (ja) | 2013-10-09 | 2017-03-22 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US9734756B2 (en) | 2013-10-18 | 2017-08-15 | Apple Inc. | Organic light emitting diode displays with reduced leakage current |
| KR102227474B1 (ko) * | 2013-11-05 | 2021-03-15 | 삼성디스플레이 주식회사 | 박막트랜지스터 어레이 기판, 유기발광표시장치 및 박막트랜지스터 어레이 기판의 제조 방법 |
| KR102273443B1 (ko) * | 2013-12-05 | 2021-07-07 | 엘지디스플레이 주식회사 | 유기전계 발광소자 |
| WO2015097596A1 (en) * | 2013-12-26 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9401432B2 (en) | 2014-01-16 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| KR102325158B1 (ko) | 2014-01-30 | 2021-11-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법 |
| KR102235597B1 (ko) | 2014-02-19 | 2021-04-05 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
| EP2911199B1 (en) | 2014-02-24 | 2020-05-06 | LG Display Co., Ltd. | Thin film transistor substrate and display using the same |
| US9881986B2 (en) | 2014-02-24 | 2018-01-30 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
| KR102346544B1 (ko) * | 2014-02-24 | 2022-01-05 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
| KR102397873B1 (ko) * | 2014-02-24 | 2022-05-16 | 엘지디스플레이 주식회사 | 표시장치 |
| US9214508B2 (en) | 2014-02-24 | 2015-12-15 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
| KR102279392B1 (ko) * | 2014-02-24 | 2021-07-21 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
| US9489882B2 (en) * | 2014-02-25 | 2016-11-08 | Lg Display Co., Ltd. | Display having selective portions driven with adjustable refresh rate and method of driving the same |
| JP6518890B2 (ja) | 2014-03-31 | 2019-05-29 | 株式会社Joled | 表示装置および電子機器 |
| US9336709B2 (en) | 2014-04-25 | 2016-05-10 | Apple Inc. | Displays with overlapping light-emitting diodes and gate drivers |
| US10073571B2 (en) * | 2014-05-02 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor and touch panel including capacitor |
| JP2015225104A (ja) * | 2014-05-26 | 2015-12-14 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP6722986B2 (ja) | 2014-07-04 | 2020-07-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10147747B2 (en) | 2014-08-21 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| CN105390504B (zh) | 2014-08-29 | 2019-02-01 | 乐金显示有限公司 | 薄膜晶体管基板及使用它的显示装置 |
| US9601517B2 (en) | 2014-10-01 | 2017-03-21 | Apple Inc. | Hybrid pixel control circuits for light-emitting diode display |
| JP2016110075A (ja) * | 2014-10-03 | 2016-06-20 | 株式会社半導体エネルギー研究所 | 発光装置、モジュール、及び電子機器 |
| KR102226236B1 (ko) | 2014-10-13 | 2021-03-11 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP6587497B2 (ja) * | 2014-10-31 | 2019-10-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101658716B1 (ko) | 2014-12-31 | 2016-09-30 | 엘지디스플레이 주식회사 | 표시 장치 |
| JP6474275B2 (ja) | 2015-02-19 | 2019-02-27 | 株式会社ディスコ | 加工装置 |
| US9685469B2 (en) | 2015-04-03 | 2017-06-20 | Apple Inc. | Display with semiconducting oxide and polysilicon transistors |
| US10020354B2 (en) | 2015-04-17 | 2018-07-10 | Apple Inc. | Organic light-emitting diode displays with silicon and semiconducting oxide thin-film transistors |
| KR102326170B1 (ko) | 2015-04-20 | 2021-11-17 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
| KR102408898B1 (ko) | 2015-06-19 | 2022-06-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
| WO2017052727A1 (en) | 2015-09-25 | 2017-03-30 | Cressputi Research Llc | Light sensing display |
| KR102454087B1 (ko) | 2015-10-27 | 2022-10-13 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 |
| US10121430B2 (en) | 2015-11-16 | 2018-11-06 | Apple Inc. | Displays with series-connected switching transistors |
| KR102424108B1 (ko) | 2015-11-26 | 2022-07-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
| KR102519942B1 (ko) | 2015-11-26 | 2023-04-11 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치용 박막 트랜지스터 기판 |
| US9818344B2 (en) | 2015-12-04 | 2017-11-14 | Apple Inc. | Display with light-emitting diodes |
| KR102485374B1 (ko) | 2015-12-31 | 2023-01-04 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
| JP2017162852A (ja) | 2016-03-07 | 2017-09-14 | 株式会社ジャパンディスプレイ | 半導体装置および表示装置 |
| JP6673731B2 (ja) | 2016-03-23 | 2020-03-25 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
| JP2017174946A (ja) | 2016-03-23 | 2017-09-28 | 株式会社ジャパンディスプレイ | 半導体装置の製造方法 |
| JP6827270B2 (ja) | 2016-03-28 | 2021-02-10 | 株式会社ジャパンディスプレイ | 半導体装置の作製方法 |
| JP6668160B2 (ja) | 2016-05-06 | 2020-03-18 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
| JP6725317B2 (ja) | 2016-05-19 | 2020-07-15 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2017224676A (ja) | 2016-06-14 | 2017-12-21 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
| KR20180004370A (ko) | 2016-07-01 | 2018-01-11 | 삼성디스플레이 주식회사 | 화소 및 스테이지 회로와 이를 가지는 유기전계발광 표시장치 |
| JP6751613B2 (ja) | 2016-07-15 | 2020-09-09 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2018013567A (ja) | 2016-07-20 | 2018-01-25 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102458660B1 (ko) * | 2016-08-03 | 2022-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016048385A1 (en) * | 2014-09-24 | 2016-03-31 | Apple Inc. | Silicon and semiconducting oxide thin-film transistor displays |
| JP2016091027A (ja) * | 2014-10-31 | 2016-05-23 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール及び電子機器 |
| US20160163745A1 (en) * | 2014-12-03 | 2016-06-09 | Apple Inc. | Organic Light-Emitting Diode Display With Double Gate Transistors |
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