JP7060927B2 - 表示装置および電子機器 - Google Patents
表示装置および電子機器 Download PDFInfo
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- JP7060927B2 JP7060927B2 JP2017141468A JP2017141468A JP7060927B2 JP 7060927 B2 JP7060927 B2 JP 7060927B2 JP 2017141468 A JP2017141468 A JP 2017141468A JP 2017141468 A JP2017141468 A JP 2017141468A JP 7060927 B2 JP7060927 B2 JP 7060927B2
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- transistor
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- light emitting
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Description
本発明の一態様の表示装置は、発光素子を駆動するためのトランジスタ(駆動トランジスタ)を第1の素子層に配置し、ソース線のビデオ電圧を駆動トランジスタのゲートに与えるためにスイッチとして機能するトランジスタ(選択トランジスタ)を第1の素子層の上層である第2の素子層に配置する構成とする。駆動トランジスタはSOI(Silicon on Insulator)基板を用いて作製されたトランジスタのように、シリコンをチャネル形成領域に有するトランジスタとする。選択トランジスタは、半導体として機能する金属酸化物(以下、酸化物半導体、またはOS(Oxide Semiconductor)ともいう)をチャネル形成領域に有するトランジスタとする。
本発明の一態様の表示装置は、シリコンを用いたトランジスタ(Siトランジスタ)と、酸化物半導体を用いたトランジスタ(OSトランジスタ)とを有する。Siトランジスタは、シリコンウェハ、SOI(Silicon on Insulator)基板、絶縁表面上のシリコン薄膜などを用いて形成することができる。本実施の形態では、表示装置の作製方法について、図7乃至図10を参照して説明する。
本実施の形態では、本発明の一態様の表示装置を適用可能な表示モジュールの例について説明する。本発明の一態様の表示装置を有する表示モジュールについて、図11を用いて説明を行う。表示モジュールは、本発明の一態様の表示装置を有するため、極めて精細度が高い表示部とすることができる。
本実施の形態では、本発明の一態様の表示装置を適用可能な電子機器の例について説明する。
M1 トランジスタ
M2 トランジスタ
M3 トランジスタ
M11 トランジスタ
M12 トランジスタ
M13 トランジスタ
M14 トランジスタ
10 表示装置
11 駆動回路
12 駆動回路
13 表示部
20 画素回路
20A 画素回路
21 素子層
21B 素子層
21C 素子層
22 素子層
23 素子層
31 ベース基板
33 絶縁層
35 半導体層
36 半導体層
36A 不純物領域
36B 不純物領域
37 チャネル形成領域
38 ゲート絶縁層
39 ゲート電極層
40 絶縁層
41 絶縁層
42 絶縁層
43A 電極層
43B 電極層
43C ゲート電極層
44 ゲート絶縁層
45 酸化物半導体層
46A ソース電極
46B ドレイン電極
46C 電極
47 絶縁層
48 絶縁層
49 絶縁層
50 導電層
51 絶縁層
52 EL層
53 導電層
61 シフトレジスタ
62 バッファ回路
63 ビデオ電圧生成回路
64 バッファ回路
71 不純物元素
80 ボンド基板
82 脆化層
84 半導体層
85 半導体層
7000 表示部
7001 表示部
7100 携帯電話機
7101 筐体
7103 操作ボタン
7104 外部接続ポート
7105 スピーカ
7106 マイク
7107 カメラ
7110 携帯電話機
7200 携帯情報端末
7201 筐体
7202 操作ボタン
7203 情報
7210 携帯情報端末
7300 テレビジョン装置
7301 筐体
7303 スタンド
7311 リモコン操作機
7500 携帯情報端末
7501 筐体
7502 部材
7503 操作ボタン
7600 携帯情報端末
7601 筐体
7602 ヒンジ
7650 携帯情報端末
7651 非表示部
7700 携帯情報端末
7701 筐体
7703a ボタン
7703b ボタン
7704a スピーカ
7704b スピーカ
7705 外部接続ポート
7706 マイク
7709 バッテリ
7800 携帯情報端末
7801 バンド
7802 入出力端子
7803 操作ボタン
7804 アイコン
7805 バッテリ
7900 自動車
7901 車体
7902 車輪
7903 フロントガラス
7904 ライト
7905 フォグランプ
7910 表示部
7911 表示部
7912 表示部
7913 表示部
7914 表示部
7915 表示部
7916 表示部
7917 表示部
800 表示モジュール
8000 筐体
801 上部カバー
8001 表示部
802 下部カバー
803 FPC
8003 スピーカ
804 タッチパネル
805 FPC
806 表示パネル
809 フレーム
810 プリント基板
811 バッテリ
8101 筐体
8102 筐体
8103 表示部
8104 表示部
8105 マイクロフォン
8106 スピーカ
8107 操作キー
8108 スタイラス
8111 筐体
8112 表示部
8113 キーボード
8114 ポインティングデバイス
8200 ヘッドマウントディスプレイ
8201 装着部
8202 レンズ
8203 本体
8204 表示部
8205 ケーブル
8206 バッテリ
8300 ヘッドマウントディスプレイ
8301 筐体
8302 表示部
8303 操作ボタン
8304 固定具
8305 レンズ
8306 ダイヤル
8400 カメラ
8401 筐体
8402 表示部
8403 操作ボタン
8404 シャッターボタン
8406 レンズ
8500 ファインダー
8501 筐体
8502 表示部
8503 ボタン
Claims (6)
- 画素回路と、発光素子と、を有し、
前記画素回路は、第1のトランジスタを有する第1の素子層と、第2のトランジスタを有する第2の素子層と、を有し、
前記発光素子は、第1の導電層を有し、
前記第1の導電層は、前記第1の導電層の下方に位置し、且つ前記第2のトランジスタのソース電極又はドレイン電極と同層に位置する第2の導電層の上面と接し、
前記第2の導電層の下方に、前記第1のトランジスタのソース又はドレインの一方として機能する第3の導電層が位置し、
前記第2の導電層と前記第3の導電層との間には、前記第2の導電層の下面と接する領域を有し、且つ前記第3の導電層の上面と接する領域を有する単層の第1の絶縁層を有し、
前記第1のトランジスタは、チャネル形成領域にシリコンを有し、
前記第1のトランジスタは、前記発光素子を駆動する機能を有し、
前記第2のトランジスタは、スイッチの機能を有し、
前記第2のトランジスタは、チャネル形成領域に金属酸化物を有し、
前記金属酸化物は、半導体の機能を有し、
前記第2の素子層は、前記第1の素子層の上方に設けられることを特徴とする表示装置。 - 画素回路と、発光素子と、を有し、
前記画素回路は、第1のトランジスタを有する第1の素子層と、第2のトランジスタを有する第2の素子層と、を有し、
前記発光素子は、第1の導電層を有し、
前記第1の導電層は、前記第1の導電層の下方に位置し、且つ前記第2のトランジスタのソース電極又はドレイン電極と同層に位置する第2の導電層の上面と接し、
前記第2の導電層の下方に、前記第1のトランジスタのソース又はドレインの一方として機能する第3の導電層が位置し、
前記第2の導電層と前記第3の導電層との間には、前記第2の導電層の下面と接する領域を有し、且つ前記第3の導電層の上面と接する領域を有する単層の第1の絶縁層を有し、
前記第1のトランジスタは、チャネル形成領域にシリコンを有し、
前記第1のトランジスタは、前記発光素子を駆動する機能を有し、
前記第2のトランジスタは、スイッチの機能を有し、
前記第2のトランジスタは、チャネル形成領域に金属酸化物を有し、
前記金属酸化物は、半導体の機能を有し、
前記第2の素子層は、前記第1の素子層の上方に設けられ、
前記発光素子を有する層は、前記第2の素子層の上方に設けられることを特徴とする表示装置。 - 画素回路と、発光素子と、駆動回路と、を有し、
前記画素回路は、第1のトランジスタを有する第1の素子層と、第2のトランジスタを有する第2の素子層と、を有し、
前記発光素子は、第1の導電層を有し、
前記第1の導電層は、前記第1の導電層の下方に位置し、且つ前記第2のトランジスタのソース電極又はドレイン電極と同層に位置する第2の導電層の上面と接し、
前記第2の導電層の下方に、前記第1のトランジスタのソース又はドレインの一方として機能する第3の導電層が位置し、
前記第2の導電層と前記第3の導電層との間には、前記第2の導電層の下面と接する領域を有し、且つ前記第3の導電層の上面と接する領域を有する単層の第1の絶縁層を有し、
前記駆動回路は、第3のトランジスタと、第4のトランジスタと、を有し、
前記駆動回路は、ソース線またはゲート線に電気的に接続され、
前記第1のトランジスタは、チャネル形成領域にシリコンを有し、
前記第1のトランジスタは、前記発光素子を駆動する機能を有し、
前記第2のトランジスタは、スイッチの機能を有し、
前記第2のトランジスタは、チャネル形成領域に金属酸化物を有し、
前記金属酸化物は、半導体の機能を有し、
前記第3のトランジスタおよび前記第4のトランジスタは、前記第1の素子層に設けられ、
前記第2の素子層は、前記第1の素子層の上方に設けられることを特徴とする表示装置。 - 画素回路と、発光素子と、駆動回路と、を有し、
前記画素回路は、第1のトランジスタを有する第1の素子層と、第2のトランジスタを有する第2の素子層と、を有し、
前記発光素子は、第1の導電層を有し、
前記第1の導電層は、前記第1の導電層の下方に位置し、且つ前記第2のトランジスタのソース電極又はドレイン電極と同層に位置する第2の導電層の上面と接し、
前記第2の導電層の下方に、前記第1のトランジスタのソース又はドレインの一方として機能する第3の導電層が位置し、
前記第2の導電層と前記第3の導電層との間には、前記第2の導電層の下面と接する領域を有し、且つ前記第3の導電層の上面と接する領域を有する単層の第1の絶縁層を有し、
前記駆動回路は、第3のトランジスタと、第4のトランジスタと、を有し、
前記駆動回路は、ソース線またはゲート線に電気的に接続され、
前記第1のトランジスタは、チャネル形成領域にシリコンを有し、
前記第1のトランジスタは、前記発光素子を駆動する機能を有し、
前記第2のトランジスタは、スイッチの機能を有し、
前記第2のトランジスタは、チャネル形成領域に金属酸化物を有し、
前記金属酸化物は、半導体の機能を有し、
前記第3のトランジスタおよび前記第4のトランジスタは、前記第1の素子層に設けられ、
前記第2の素子層は、前記第1の素子層の上方に設けられ、
前記発光素子を有する層は、前記第2の素子層の上方に設けられることを特徴とする表示装置。 - 請求項1乃至4のいずれか一項において、
前記画素回路は、さらに第5のトランジスタを有し、
前記第5のトランジスタは、スイッチの機能を有し、
前記第5のトランジスタは、前記第2の素子層に設けられることを特徴とする表示装置。 - 請求項1乃至請求項5のいずれか一項に記載の表示装置と、レンズと、操作ボタンと、固定具と、を備えた電子機器。
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