JP2015156486A - 有機発光ディスプレイ装置 - Google Patents
有機発光ディスプレイ装置 Download PDFInfo
- Publication number
- JP2015156486A JP2015156486A JP2015022859A JP2015022859A JP2015156486A JP 2015156486 A JP2015156486 A JP 2015156486A JP 2015022859 A JP2015022859 A JP 2015022859A JP 2015022859 A JP2015022859 A JP 2015022859A JP 2015156486 A JP2015156486 A JP 2015156486A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- organic light
- light emitting
- layer
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000003990 capacitor Substances 0.000 claims description 41
- 239000012535 impurity Substances 0.000 claims description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 159
- 239000010409 thin film Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
本実施形態において、前記キャパシタは、前記第2絶縁層を挟んで、前記第2電極上に形成された第3電極をさらに含んでもよい。
本発明の他の実施形態は、基板上に多結晶シリコン層を形成し、前記多結晶シリコン層をパターニングし、第1ゲート電極の中間層、及び活性層の中間層を形成するパターニング段階、前記第1ゲート電極の中間層上、及び前記活性層の中間層上に、第1絶縁層を形成する段階、前記活性層の中間層上に位置するように、前記第1絶縁層上に第2ゲート電極を形成する段階、前記第1ゲート電極の中間層と、前記活性層の中間層とに、不純物をドーピングし、第1ゲート電極と活性層とを形成するドーピング段階、前記第1ゲート電極上に位置するように、前記第1絶縁層上に酸化物半導体層を形成する段階、前記第2ゲート電極と、前記酸化物半導体層との上に、第2絶縁層を形成する段階、及び前記第2絶縁層を貫通し、前記酸化物半導体層と接する、第1ソース電極及び第1ドレイン電極を形成する段階を含む有機発光ディスプレイ装置の製造方法を開示する。
本実施形態において、前記酸化物半導体層は、ガリウム(Ga)、インジウム(In)、亜鉛(Zn)、ハフニウム(Hf)及びスズ(Sn)のうち一つ以上の元素と、酸素(O)とを含んで形成されてもよい。
複数の画素それぞれは、図2に図示されているように、有機発光素子OLEDと、有機発光素子OLEDに電流を供給するための画素回路Cと、を具備することができる。
キャパシタC1は、第1電極410と第2電極420との間、及び第2電極420と第3電極430との間の2つのキャパシタが並列に連結されて密度が増大するので、キャパシタC1の大きさを縮小させることができる。
次に、図5のように、活性層の中間層201上に位置するように、第1絶縁層102上に、第2ゲート電極220を形成する。ゲート電極220は、Au、Ag、Cu、Ni、Pt、Pd、Al、Moを含み、Al:Nd合金、Mo:W合金のような合金を含んでもよいが、本発明は、それに限定されるものではない。
101 基板
102 第1絶縁層
103 第2絶縁層
201 活性層の中間層
202 第1ゲート電極の中間層
203 第1電極の中間層
210 活性層
212 チャネル領域
214 ソース領域
216 ドレイン領域
220 第2ゲート電極
232 第2ソース電極
234 第2ドレイン電極
310 第1ゲート電極
320 酸化物半導体層
332 第1ソース電極
334 第1ドレイン
410 第1電極
420 第2電極
430 第3電極
C 画素回路
C1 キャパシタ
N1 第1ノード
DA 表示領域
ND 非表示領域
TR1 第1トランジスタ
TR2 第2トランジスタ
OLED 有機発光素子
ELVDD(t) 第1電源
ELVSS(t) 第2電源
Data(t) データ信号
Scan(n) スキャン信号
h1 第1ビアホール
h2 第2ビアホール
h3 第3ビアホール
Claims (10)
- 基板と、
前記基板上に形成された有機発光素子と、
前記有機発光素子に電流を供給するための画素回路と、を含み、
前記画素回路は、前記基板上に形成されたスイッチングトランジスタと駆動トランジスタとを含み、
前記スイッチングトランジスタは、前記基板上の第1ゲート電極と、第1絶縁層を挟んで、前記第1ゲート電極上に形成された酸化物半導体層と、を含み、
前記駆動トランジスタは、前記基板上の活性層と、前記第1絶縁層を挟んで、前記活性層上に形成された第2ゲート電極と、を含む有機発光ディスプレイ装置。 - 前記酸化物半導体層は、ガリウム(Ga)、インジウム(In)、亜鉛(Zn)、ハフニウム(Hf)及びスズ(Sn)のうち一つ以上の元素と、酸素(O)とを含むことを特徴とする請求項1に記載の有機発光ディスプレイ装置。
- 前記第1ゲート電極は、不純物がドーピングされた多結晶シリコン層であることを特徴とする請求項1に記載の有機発光ディスプレイ装置。
- 前記活性層は、チャネル領域、並びに前記チャネル領域の両側に、前記不純物がドーピングされたソース領域及びドレイン領域を含むことを特徴とする請求項3に記載の有機発光ディスプレイ装置。
- 前記酸化物半導体層と前記第2ゲート電極との上の第2絶縁層をさらに含み、
前記スイッチングトランジスタは、前記第2絶縁層を貫通し、前記酸化物半導体層と接する、第1ソース電極及び第1ドレイン電極を含むことを特徴とする請求項4に記載の有機発光ディスプレイ装置。 - 前記駆動トランジスタは、前記第1絶縁層及び前記第2絶縁層を貫通し、前記ソース領域及び前記ドレイン領域とそれぞれ接する第2ソース電極と第2ドレイン電極とを含むことを特徴とする請求項5に記載の有機発光ディスプレイ装置。
- 前記画素回路は、キャパシタをさらに含み、
前記キャパシタは、前記基板上の第1電極と、前記第1絶縁層を挟んで、前記第1電極上に形成された第2電極と、を含むことを特徴とする請求項4に記載の有機発光ディスプレイ装置。 - 前記第1電極は、前記不純物がドーピングされた前記多結晶シリコン層から形成され、
前記第2電極は、前記酸化物半導体層から形成されたことを特徴とする請求項7に記載の有機発光ディスプレイ装置。 - 前記キャパシタは、前記第2絶縁層を挟んで、前記第2電極上に形成された第3電極をさらに含むことを特徴とする請求項7に記載の有機発光ディスプレイ装置。
- 前記有機発光素子は、アノード電極、カソード電極、及び前記アノード電極と前記カソード電極との間に位置する有機発光層を含むことを特徴とする請求項1に記載の有機発光ディスプレイ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2014-0019212 | 2014-02-19 | ||
KR1020140019212A KR102235597B1 (ko) | 2014-02-19 | 2014-02-19 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015156486A true JP2015156486A (ja) | 2015-08-27 |
JP6578102B2 JP6578102B2 (ja) | 2019-09-18 |
Family
ID=53798816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015022859A Active JP6578102B2 (ja) | 2014-02-19 | 2015-02-09 | 有機発光ディスプレイ装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9530854B2 (ja) |
JP (1) | JP6578102B2 (ja) |
KR (1) | KR102235597B1 (ja) |
CN (1) | CN104851388B (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017536646A (ja) * | 2014-09-24 | 2017-12-07 | アップル インコーポレイテッド | シリコン及び半導体酸化物の薄膜トランジスタディスプレイ |
JP2018025777A (ja) * | 2016-08-03 | 2018-02-15 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
JP2018036290A (ja) * | 2016-08-29 | 2018-03-08 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2018043472A1 (ja) * | 2016-09-02 | 2018-03-08 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
JP2018078217A (ja) * | 2016-11-10 | 2018-05-17 | 株式会社Joled | 薄膜トランジスタ基板 |
JP2018101681A (ja) * | 2016-12-20 | 2018-06-28 | 株式会社Joled | 半導体装置および表示装置 |
US10096622B2 (en) | 2013-08-26 | 2018-10-09 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
WO2019064744A1 (ja) * | 2017-09-28 | 2019-04-04 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2020100442A1 (ja) * | 2018-11-14 | 2020-05-22 | 株式会社ジャパンディスプレイ | 表示装置 |
US10714009B2 (en) | 2015-12-04 | 2020-07-14 | Apple Inc. | Display with light-emitting diodes |
WO2022190984A1 (ja) * | 2021-03-08 | 2022-09-15 | キヤノン株式会社 | 半導体装置および機器 |
US20230354644A1 (en) * | 2014-07-23 | 2023-11-02 | Sony Group Corporation | Display device, method of manufacturing display device, and electronic apparatus |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
KR102235597B1 (ko) * | 2014-02-19 | 2021-04-05 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
EP2911202B1 (en) | 2014-02-24 | 2019-02-20 | LG Display Co., Ltd. | Thin film transistor substrate and display using the same |
US10985196B2 (en) | 2014-02-24 | 2021-04-20 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
US9214508B2 (en) | 2014-02-24 | 2015-12-15 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
US9691799B2 (en) | 2014-02-24 | 2017-06-27 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
EP2911200B1 (en) | 2014-02-24 | 2020-06-03 | LG Display Co., Ltd. | Thin film transistor substrate and display using the same |
US9721973B2 (en) | 2014-02-24 | 2017-08-01 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
US10325937B2 (en) | 2014-02-24 | 2019-06-18 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
CN105390503B (zh) | 2014-08-29 | 2018-12-28 | 乐金显示有限公司 | 薄膜晶体管基板及使用薄膜晶体管基板的显示装置 |
CN105390502B (zh) | 2014-08-29 | 2019-07-12 | 乐金显示有限公司 | 显示装置 |
US10083990B2 (en) | 2014-08-29 | 2018-09-25 | Lg Display Co., Ltd. | Thin film transistor substrate and display device using the same |
KR102519942B1 (ko) * | 2015-11-26 | 2023-04-11 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치용 박막 트랜지스터 기판 |
CN105931988B (zh) * | 2016-05-30 | 2019-12-24 | 深圳市华星光电技术有限公司 | Amoled像素驱动电路的制作方法 |
WO2017206141A1 (zh) | 2016-06-02 | 2017-12-07 | 长春富乐玻显示技术有限公司 | Oled驱动电路及其制备方法和显示装置 |
US10217678B2 (en) * | 2016-06-14 | 2019-02-26 | Innolux Corporation | Display device and method of manufacturing the display device |
KR102476721B1 (ko) * | 2016-06-30 | 2022-12-15 | 삼성디스플레이 주식회사 | 스테이지 및 이를 이용한 유기전계발광 표시장치 |
KR102566551B1 (ko) | 2016-12-05 | 2023-08-14 | 삼성디스플레이주식회사 | 표시장치 및 그의 구동방법 |
KR102486085B1 (ko) * | 2017-11-30 | 2023-01-06 | 엘지디스플레이 주식회사 | 화소 및 이를 포함하는 발광 표시 장치 |
TWI684053B (zh) * | 2018-06-21 | 2020-02-01 | 友達光電股份有限公司 | 顯示裝置及其製造方法 |
KR20200145882A (ko) * | 2019-06-19 | 2020-12-31 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20210010696A (ko) * | 2019-07-17 | 2021-01-28 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20210060692A (ko) | 2019-11-18 | 2021-05-27 | 삼성디스플레이 주식회사 | 표시 패널 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011044698A (ja) * | 2009-07-18 | 2011-03-03 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
JP2011048339A (ja) * | 2009-08-25 | 2011-03-10 | Samsung Mobile Display Co Ltd | 有機発光表示装置及びその製造方法 |
JP2011054936A (ja) * | 2009-09-03 | 2011-03-17 | Samsung Mobile Display Co Ltd | 有機発光表示装置及びその製造方法 |
JP2011100091A (ja) * | 2009-11-04 | 2011-05-19 | Samsung Mobile Display Co Ltd | 有機電界発光表示装置の製造方法 |
US20130015448A1 (en) * | 2011-07-14 | 2013-01-17 | Chao-Shun Yang | Semiconductor device and electroluminescent device and method of making the same |
CN103295962A (zh) * | 2013-05-29 | 2013-09-11 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法,显示装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2350926A (en) * | 1999-05-27 | 2000-12-13 | Seiko Epson Corp | Monolithic,semiconductor light emitting and receiving device |
JP4434411B2 (ja) * | 2000-02-16 | 2010-03-17 | 出光興産株式会社 | アクティブ駆動型有機el発光装置およびその製造方法 |
JP2002050764A (ja) * | 2000-08-02 | 2002-02-15 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、アレイ基板、液晶表示装置、有機el表示装置およびその製造方法 |
US7105999B2 (en) * | 2002-07-05 | 2006-09-12 | Lg.Philips Lcd Co., Ltd. | Organic electroluminescent display device and method of fabricating the same |
KR100885843B1 (ko) * | 2002-08-31 | 2009-02-27 | 엘지디스플레이 주식회사 | 유기전계발광 표시소자 및 그 제조방법 |
TWI291310B (en) | 2005-12-01 | 2007-12-11 | Au Optronics Corp | Organic light emitting diode (OLED) display panel and method of forming polysilicon channel layer thereof |
TWI371223B (en) | 2008-02-20 | 2012-08-21 | Chimei Innolux Corp | Organic light emitting display device and fabrications thereof and electronic device |
CN201199736Y (zh) * | 2008-05-23 | 2009-02-25 | 上海广电光电子有限公司 | 有机发光显示器的像素电路 |
KR101408962B1 (ko) | 2008-07-01 | 2014-06-17 | 삼성디스플레이 주식회사 | 트랜지스터의 제조방법 및 이를 이용한 유기전계발광표시장치의 제조방법 |
KR101100999B1 (ko) | 2009-01-13 | 2011-12-29 | 삼성모바일디스플레이주식회사 | 씨모스 박막트랜지스터 및 그 제조방법과 이를 구비한 유기전계발광 표시장치 |
KR101048965B1 (ko) | 2009-01-22 | 2011-07-12 | 삼성모바일디스플레이주식회사 | 유기 전계발광 표시장치 |
KR20230174763A (ko) * | 2009-11-13 | 2023-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
KR101084273B1 (ko) | 2010-03-03 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101137391B1 (ko) * | 2010-03-24 | 2012-04-20 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터를 갖는 기판, 이를 제조하는 방법, 및 상기 박막 트랜지스터를 갖는 기판을 구비하는 유기 발광 표시 장치 |
KR101808533B1 (ko) | 2011-08-02 | 2017-12-13 | 엘지디스플레이 주식회사 | 유기 전계 발광 표시 패널 및 그의 제조방법 |
TWI463663B (zh) * | 2011-12-30 | 2014-12-01 | Ind Tech Res Inst | 半導體元件及其製造方法 |
KR102235597B1 (ko) * | 2014-02-19 | 2021-04-05 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
-
2014
- 2014-02-19 KR KR1020140019212A patent/KR102235597B1/ko active IP Right Grant
- 2014-11-12 US US14/539,048 patent/US9530854B2/en active Active
-
2015
- 2015-02-09 JP JP2015022859A patent/JP6578102B2/ja active Active
- 2015-02-11 CN CN201510072175.8A patent/CN104851388B/zh active Active
-
2016
- 2016-12-16 US US15/381,998 patent/US9768208B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011044698A (ja) * | 2009-07-18 | 2011-03-03 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
JP2011048339A (ja) * | 2009-08-25 | 2011-03-10 | Samsung Mobile Display Co Ltd | 有機発光表示装置及びその製造方法 |
JP2011054936A (ja) * | 2009-09-03 | 2011-03-17 | Samsung Mobile Display Co Ltd | 有機発光表示装置及びその製造方法 |
JP2011100091A (ja) * | 2009-11-04 | 2011-05-19 | Samsung Mobile Display Co Ltd | 有機電界発光表示装置の製造方法 |
US20130015448A1 (en) * | 2011-07-14 | 2013-01-17 | Chao-Shun Yang | Semiconductor device and electroluminescent device and method of making the same |
CN103295962A (zh) * | 2013-05-29 | 2013-09-11 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法,显示装置 |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10707237B2 (en) | 2013-08-26 | 2020-07-07 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US11876099B2 (en) | 2013-08-26 | 2024-01-16 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US11587954B2 (en) | 2013-08-26 | 2023-02-21 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US11177291B2 (en) | 2013-08-26 | 2021-11-16 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US10096622B2 (en) | 2013-08-26 | 2018-10-09 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US10998344B2 (en) | 2013-08-26 | 2021-05-04 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US10741588B2 (en) | 2013-08-26 | 2020-08-11 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US11985857B2 (en) * | 2014-07-23 | 2024-05-14 | Sony Group Corporation | Display device, method of manufacturing display device, and electronic apparatus |
US20230354644A1 (en) * | 2014-07-23 | 2023-11-02 | Sony Group Corporation | Display device, method of manufacturing display device, and electronic apparatus |
US10032841B2 (en) | 2014-09-24 | 2018-07-24 | Apple Inc. | Silicon and semiconducting oxide thin-film transistor displays |
JP2017536646A (ja) * | 2014-09-24 | 2017-12-07 | アップル インコーポレイテッド | シリコン及び半導体酸化物の薄膜トランジスタディスプレイ |
US10997917B2 (en) | 2015-12-04 | 2021-05-04 | Apple Inc. | Display with light-emitting diodes |
US11232748B2 (en) | 2015-12-04 | 2022-01-25 | Apple Inc. | Display with light-emitting diodes |
US11615746B2 (en) | 2015-12-04 | 2023-03-28 | Apple Inc. | Display with light-emitting diodes |
US11462163B2 (en) | 2015-12-04 | 2022-10-04 | Apple Inc. | Display with light-emitting diodes |
US11875745B2 (en) | 2015-12-04 | 2024-01-16 | Apple Inc. | Display with light-emitting diodes |
US10714009B2 (en) | 2015-12-04 | 2020-07-14 | Apple Inc. | Display with light-emitting diodes |
JP7060927B2 (ja) | 2016-08-03 | 2022-04-27 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
US11404447B2 (en) | 2016-08-03 | 2022-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
JP2018025777A (ja) * | 2016-08-03 | 2018-02-15 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
US11676971B2 (en) | 2016-08-03 | 2023-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
JP2018036290A (ja) * | 2016-08-29 | 2018-03-08 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2018043472A1 (ja) * | 2016-09-02 | 2018-03-08 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
JPWO2018043472A1 (ja) * | 2016-09-02 | 2019-06-27 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
JP2018078217A (ja) * | 2016-11-10 | 2018-05-17 | 株式会社Joled | 薄膜トランジスタ基板 |
JP2018101681A (ja) * | 2016-12-20 | 2018-06-28 | 株式会社Joled | 半導体装置および表示装置 |
WO2019064744A1 (ja) * | 2017-09-28 | 2019-04-04 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2020100442A1 (ja) * | 2018-11-14 | 2020-05-22 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2022190984A1 (ja) * | 2021-03-08 | 2022-09-15 | キヤノン株式会社 | 半導体装置および機器 |
Also Published As
Publication number | Publication date |
---|---|
CN104851388A (zh) | 2015-08-19 |
US20150236079A1 (en) | 2015-08-20 |
JP6578102B2 (ja) | 2019-09-18 |
KR102235597B1 (ko) | 2021-04-05 |
US9768208B2 (en) | 2017-09-19 |
KR20150098281A (ko) | 2015-08-28 |
CN104851388B (zh) | 2019-01-04 |
US20170098664A1 (en) | 2017-04-06 |
US9530854B2 (en) | 2016-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6578102B2 (ja) | 有機発光ディスプレイ装置の製造方法 | |
US10050095B2 (en) | Transparent organic light-emitting diode display with capacitor overlapping light transmitting region | |
US9184222B2 (en) | Method of manufacturing an organic light-emitting display device | |
US9390655B2 (en) | Organic light emitting diode display, driving method thereof, and manufacturing method thereof | |
US9076983B2 (en) | Organic light-emitting display device and method of manufacturing the same | |
KR101811702B1 (ko) | 유기 발광 디스플레이 장치 및 이의 제조 방법 | |
CN104576653B (zh) | 薄膜晶体管阵列基板及其制造方法 | |
KR102349283B1 (ko) | 박막 트랜지스터 어레이 기판, 및 이를 포함하는 유기 발광 표시 장치 | |
KR101780250B1 (ko) | 유기 발광 디스플레이 장치 및 이의 제조 방법 | |
KR20130053053A (ko) | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조방법 | |
KR102056865B1 (ko) | 표시 장치용 필름 및 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법 | |
KR20100090998A (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
TW201513318A (zh) | 製造顯示面板之方法 | |
US20160111483A1 (en) | Thin film transistor array substrate, method of manufacturing the same, and organic light-emitting diode (oled) display including the same | |
KR102352182B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
JP2012124153A (ja) | 有機発光ディスプレイ装置及びその製造方法 | |
KR20150073745A (ko) | 유기 발광 표시 장치용 원장 기판 및 유기 발광 표시 장치 | |
US20150102300A1 (en) | Organic light emitting display apparatus and method of manufacturing the same | |
KR20160013341A (ko) | 표시장치 및 표시장치 제조방법 | |
KR20140120542A (ko) | 유기발광표시장치 및 이의 제조방법 | |
KR101094296B1 (ko) | 표시장치 및 그 제조 방법 | |
KR102493127B1 (ko) | 반도체 소자 및 그의 제조 방법 | |
KR102556027B1 (ko) | 디스플레이장치 및 이의 제조방법 | |
KR102296921B1 (ko) | 표시장치 및 표시장치 제조방법 | |
KR20080056897A (ko) | 유기 전계 발광 표시장치 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20160405 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180208 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181212 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190318 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190409 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190709 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190730 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190826 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6578102 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |