TWI621923B - Exposure apparatus, exposure method, and component manufacturing method - Google Patents

Exposure apparatus, exposure method, and component manufacturing method Download PDF

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Publication number
TWI621923B
TWI621923B TW100140676A TW100140676A TWI621923B TW I621923 B TWI621923 B TW I621923B TW 100140676 A TW100140676 A TW 100140676A TW 100140676 A TW100140676 A TW 100140676A TW I621923 B TWI621923 B TW I621923B
Authority
TW
Taiwan
Prior art keywords
liquid
substrate
supply
recovery
optical system
Prior art date
Application number
TW100140676A
Other languages
English (en)
Chinese (zh)
Other versions
TW201220002A (en
Inventor
Hiroyuki Nagasaka
Soichi Owa
Yasufumi Nishii
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW201220002A publication Critical patent/TW201220002A/zh
Application granted granted Critical
Publication of TWI621923B publication Critical patent/TWI621923B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • User Interface Of Digital Computer (AREA)
TW100140676A 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and component manufacturing method TWI621923B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003049365 2003-02-26
JP2003110748 2003-04-15
JP2003320100 2003-09-11

Publications (2)

Publication Number Publication Date
TW201220002A TW201220002A (en) 2012-05-16
TWI621923B true TWI621923B (zh) 2018-04-21

Family

ID=33101941

Family Applications (6)

Application Number Title Priority Date Filing Date
TW107141889A TW201908879A (zh) 2003-02-26 2004-02-26 曝光裝置、曝光方法及元件製造方法
TW103143643A TWI591445B (zh) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and device manufacturing method
TW093104895A TW200500813A (en) 2003-02-26 2004-02-26 Exposure apparatus and method, and method of producing device
TW101105430A TWI468876B (zh) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and device manufacturing method
TW106102146A TW201719296A (zh) 2003-02-26 2004-02-26 曝光裝置、曝光方法及元件製造方法
TW100140676A TWI621923B (zh) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and component manufacturing method

Family Applications Before (5)

Application Number Title Priority Date Filing Date
TW107141889A TW201908879A (zh) 2003-02-26 2004-02-26 曝光裝置、曝光方法及元件製造方法
TW103143643A TWI591445B (zh) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and device manufacturing method
TW093104895A TW200500813A (en) 2003-02-26 2004-02-26 Exposure apparatus and method, and method of producing device
TW101105430A TWI468876B (zh) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and device manufacturing method
TW106102146A TW201719296A (zh) 2003-02-26 2004-02-26 曝光裝置、曝光方法及元件製造方法

Country Status (9)

Country Link
US (15) US7268854B2 (ko)
EP (9) EP2945016B1 (ko)
JP (11) JP4640516B2 (ko)
KR (11) KR101643112B1 (ko)
CN (2) CN104678715B (ko)
HK (9) HK1168912A1 (ko)
SG (4) SG183572A1 (ko)
TW (6) TW201908879A (ko)
WO (1) WO2004086468A1 (ko)

Families Citing this family (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101101737B1 (ko) * 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
KR101643112B1 (ko) 2003-02-26 2016-07-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101484435B1 (ko) 2003-04-09 2015-01-19 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR20170064003A (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
KR101178754B1 (ko) * 2003-04-10 2012-09-07 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
TWI421906B (zh) * 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1494079B1 (en) * 2003-06-27 2008-01-02 ASML Netherlands B.V. Lithographic Apparatus
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
WO2005006418A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
WO2005006415A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101590686B1 (ko) 2003-09-03 2016-02-01 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
WO2005029559A1 (ja) 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
TWI609409B (zh) 2003-10-28 2017-12-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置製造方法
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DE102004013886A1 (de) 2004-03-16 2005-10-06 Carl Zeiss Smt Ag Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem
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WO2005125186A1 (en) * 2004-06-15 2005-12-29 Quantum Semiconductor Llc Imaging devices operable with multiple aspect ratios
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US7180571B2 (en) * 2004-12-08 2007-02-20 Asml Netherlands B.V. Lithographic projection apparatus and actuator
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DE602006012746D1 (de) * 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
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JP2006261606A (ja) * 2005-03-18 2006-09-28 Canon Inc 露光装置、露光方法及びデバイス製造方法
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US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
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US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
US7170583B2 (en) * 2005-06-29 2007-01-30 Asml Netherlands B.V. Lithographic apparatus immersion damage control
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WO2007023813A1 (ja) 2005-08-23 2007-03-01 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US7751026B2 (en) * 2005-08-25 2010-07-06 Nikon Corporation Apparatus and method for recovering fluid for immersion lithography
JPWO2007043535A1 (ja) * 2005-10-07 2009-04-16 株式会社ニコン 光学特性計測方法、露光方法及びデバイス製造方法、並びに検査装置及び計測方法
US20070127002A1 (en) * 2005-11-09 2007-06-07 Nikon Corporation Exposure apparatus and method, and device manufacturing method
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US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
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JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
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US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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KR20090033170A (ko) * 2006-06-30 2009-04-01 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법 및 장치 및 디바이스 제조 방법
US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US8208116B2 (en) * 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US20080158531A1 (en) * 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP5055971B2 (ja) 2006-11-16 2012-10-24 株式会社ニコン 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法
JPWO2008132799A1 (ja) 2007-04-12 2010-07-22 株式会社ニコン 計測方法、露光方法及びデバイス製造方法
JP2009033111A (ja) 2007-05-28 2009-02-12 Nikon Corp 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
US8164736B2 (en) * 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8098362B2 (en) 2007-05-30 2012-01-17 Nikon Corporation Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
KR101427071B1 (ko) 2007-07-24 2014-08-07 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
US8547527B2 (en) 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
US20090051895A1 (en) * 2007-08-24 2009-02-26 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, device manufacturing method, and processing system
US8218129B2 (en) 2007-08-24 2012-07-10 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system
US8237919B2 (en) 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US8867022B2 (en) 2007-08-24 2014-10-21 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method
US9304412B2 (en) 2007-08-24 2016-04-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method
US8023106B2 (en) 2007-08-24 2011-09-20 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
EP2179330A1 (en) 2007-10-16 2010-04-28 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
KR101546987B1 (ko) 2007-10-16 2015-08-24 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
US8279399B2 (en) 2007-10-22 2012-10-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9013681B2 (en) * 2007-11-06 2015-04-21 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
WO2009060585A1 (ja) * 2007-11-07 2009-05-14 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US9256140B2 (en) * 2007-11-07 2016-02-09 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction
US8665455B2 (en) * 2007-11-08 2014-03-04 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US8422015B2 (en) 2007-11-09 2013-04-16 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US8711327B2 (en) * 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
SG183058A1 (en) * 2007-12-17 2012-08-30 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
CN102566320B (zh) 2007-12-28 2015-01-28 株式会社尼康 曝光装置、曝光方法以及器件制造方法
NL1036715A1 (nl) * 2008-04-16 2009-10-19 Asml Netherlands Bv Lithographic apparatus.
WO2009145048A1 (ja) 2008-05-28 2009-12-03 株式会社ニコン 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法
TW201003053A (en) * 2008-07-10 2010-01-16 Nikon Corp Deformation measuring apparatus, exposure apparatus, jig for deformation measuring apparatus, position measuring method and device manufacturing method
JP4922359B2 (ja) * 2008-07-25 2012-04-25 エーエスエムエル ネザーランズ ビー.ブイ. 流体ハンドリング構造、リソグラフィ装置及びデバイス製造方法
US8384875B2 (en) 2008-09-29 2013-02-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8619231B2 (en) 2009-05-21 2013-12-31 Nikon Corporation Cleaning method, exposure method, and device manufacturing method
CN102597815A (zh) * 2009-10-29 2012-07-18 Lg化学株式会社 具有低反射和高接触角的基板及其制备方法
EP2502115A4 (en) * 2009-11-20 2013-11-06 Pelican Imaging Corp RECORDING AND PROCESSING IMAGES THROUGH A MONOLITHIC CAMERA ARRAY WITH HETEROGENIC IMAGE CONVERTER
US9651873B2 (en) 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
US9352073B2 (en) 2013-01-22 2016-05-31 Niko Corporation Functional film
US9057955B2 (en) 2013-01-22 2015-06-16 Nikon Corporation Functional film, liquid immersion member, method of manufacturing liquid immersion member, exposure apparatus, and device manufacturing method
JP5979302B2 (ja) 2013-02-28 2016-08-24 株式会社ニコン 摺動膜、摺動膜が形成された部材、及びその製造方法
US20140292111A1 (en) * 2013-03-28 2014-10-02 Ebara Corporation Stage device and electron beam application apparatus
KR20230130161A (ko) 2015-02-23 2023-09-11 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 관리 방법, 중첩 계측 방법 및 디바이스 제조 방법
EP3742109A1 (en) 2015-02-23 2020-11-25 Nikon Corporation Measurement device, lithography system and exposure apparatus, and device manufacturing method
JP6719729B2 (ja) 2015-02-23 2020-07-08 株式会社ニコン 基板処理システム及び基板処理方法、並びにデバイス製造方法
WO2018038071A1 (ja) 2016-08-24 2018-03-01 株式会社ニコン 計測システム及び基板処理システム、並びにデバイス製造方法
KR102625369B1 (ko) 2016-09-30 2024-01-15 가부시키가이샤 니콘 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법
JP7431597B2 (ja) * 2020-02-05 2024-02-15 キヤノン株式会社 振動制御装置、露光装置、および物品製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
TW200423118A (en) * 2002-12-13 2004-11-01 Koninkl Philips Electronics Nv Liquid removal in a method and device for irradiating spots on a layer

Family Cites Families (244)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) * 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
DE2963537D1 (en) 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) * 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4390273A (en) * 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD242880A1 (de) 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6194342U (ko) 1984-11-27 1986-06-18
JPS6265326A (ja) * 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
US5040020A (en) * 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
JPH0263664A (ja) 1988-08-31 1990-03-02 Keihin Seiki Mfg Co Ltd 真空ダイカスト装置
JPH069195B2 (ja) * 1989-05-06 1994-02-02 大日本スクリーン製造株式会社 基板の表面処理方法
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
US5304759A (en) 1992-10-15 1994-04-19 Johnson Service Company Direct mount pressure control with a field adjustable trip point and reset point
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JPH07220990A (ja) * 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US6989647B1 (en) 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
US6008500A (en) 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5661092A (en) * 1995-09-01 1997-08-26 The University Of Connecticut Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof
US6297871B1 (en) * 1995-09-12 2001-10-02 Nikon Corporation Exposure apparatus
WO1998009278A1 (en) * 1996-08-26 1998-03-05 Digital Papyrus Technologies Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
CN1144263C (zh) 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP3728613B2 (ja) * 1996-12-06 2005-12-21 株式会社ニコン 走査型露光装置の調整方法及び該方法を使用する走査型露光装置
US5815246A (en) 1996-12-24 1998-09-29 U.S. Philips Corporation Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
DE69735016T2 (de) 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographisches Gerät mit zwei Objekthaltern
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
JP3626504B2 (ja) 1997-03-10 2005-03-09 アーエスエム リソグラフィ ベスローテン フェンノートシャップ 2個の物品ホルダを有する位置決め装置
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
US5744294A (en) * 1997-04-30 1998-04-28 Eastman Kodak Company Radiographic element modified to provide protection from visual fatigue
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6563565B2 (en) * 1997-08-27 2003-05-13 Nikon Corporation Apparatus and method for projection exposure
WO1999025011A1 (fr) 1997-11-12 1999-05-20 Nikon Corporation Appareil d'exposition par projection
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
AU1505699A (en) 1997-12-12 1999-07-05 Nikon Corporation Projection exposure method and projection aligner
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU4975399A (en) 1998-07-08 2000-02-01 Lennard H. Bieman Machine vision and semiconductor handling
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
KR19980081982A (ko) * 1998-08-11 1998-11-25 양승창 형광등 반사갓
JP2000173884A (ja) * 1998-12-02 2000-06-23 Canon Inc デバイス製造装置および方法ならびにデバイス製造装置の配線・配管実装方法
US6377332B1 (en) * 1999-02-03 2002-04-23 Nikon Corporation Optical member for photolithography and photolithography apparatus
US6707529B1 (en) * 1999-02-12 2004-03-16 Nikon Corporation Exposure method and apparatus
DE60034840T3 (de) 1999-03-23 2011-02-24 Kaneka Corp., Osaka-shi Photovoltaisches Modul
TWI242111B (en) * 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP2001021875A (ja) 1999-07-12 2001-01-26 Seiko Epson Corp 液晶装置及びこれを用いた投写型表示装置
AU6005499A (en) 1999-10-07 2001-04-23 Nikon Corporation Substrate, stage device, method of driving stage, exposure system and exposure method
JP3679668B2 (ja) 1999-12-20 2005-08-03 キヤノン株式会社 インクジェット記録ヘッドの製造方法
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2001272604A (ja) * 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
US20020014403A1 (en) * 2000-04-07 2002-02-07 Eiichi Hoshino Method of fabricating reflective mask, and methods and apparatus of detecting wet etching end point and inspecting side etching amount
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
WO2001084241A1 (en) 2000-05-03 2001-11-08 Silicon Valley Group, Inc. Non-contact seal using purge gas
US6488040B1 (en) 2000-06-30 2002-12-03 Lam Research Corporation Capillary proximity heads for single wafer cleaning and drying
JP3682914B2 (ja) 2000-07-31 2005-08-17 巌 秋月 データ通信システムおよびこれに用いるデータ処理装置、ブラウザを利用した接続維持方法、記録媒体
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002198286A (ja) * 2000-12-25 2002-07-12 Nikon Corp 露光装置
JP3961311B2 (ja) * 2001-01-19 2007-08-22 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置およびデバイスの製造方法
JP4345098B2 (ja) 2001-02-06 2009-10-14 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US7095482B2 (en) * 2001-03-27 2006-08-22 Nikon Corporation Multiple system vibration isolator
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
JP2002333018A (ja) * 2001-05-09 2002-11-22 Canon Inc 流体軸受装置、およびこれを用いた露光装置ならびにデバイス製造方法
US6618205B2 (en) * 2001-05-14 2003-09-09 Pentax Corporation Endoscope objective optical system
JP2002343565A (ja) * 2001-05-18 2002-11-29 Sharp Corp 有機led表示パネルの製造方法、その方法により製造された有機led表示パネル、並びに、その方法に用いられるベースフィルム及び基板
US6600547B2 (en) * 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
US20030091767A1 (en) 2001-11-02 2003-05-15 Podhajny Richard M. Anti-microbial packaging materials and methods for making the same
KR20050044371A (ko) * 2001-11-07 2005-05-12 어플라이드 머티어리얼스, 인코포레이티드 광학 스폿 그리드 어레이 프린터
US20040007589A1 (en) * 2002-02-12 2004-01-15 Lindsay Leveen Device and method for dispensing carbonated beverages
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
EP1532489A2 (en) 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6988327B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR100588124B1 (ko) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101424881B (zh) 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
KR101157002B1 (ko) 2002-12-10 2012-06-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
AU2003302831A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
WO2004053957A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 面位置検出装置、露光方法、及びデバイス製造方法
AU2003289199A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus and method for manufacturing device
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
CN100446179C (zh) 2002-12-10 2008-12-24 株式会社尼康 曝光设备和器件制造法
KR20050085236A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101101737B1 (ko) 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
EP1571700A4 (en) 2002-12-10 2007-09-12 Nikon Corp OPTICAL DEVICE AND PROJECTION EXPOSURE DEVICE USING THE OPTICAL DEVICE
AU2003289236A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus and method for manufacturing device
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
CN100385535C (zh) 2002-12-19 2008-04-30 皇家飞利浦电子股份有限公司 照射光敏层上斑点的方法和装置
US7112727B2 (en) * 2002-12-20 2006-09-26 Peotec Seeds S.R.L. Mutant allele of tomato
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US7090964B2 (en) 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
KR101643112B1 (ko) * 2003-02-26 2016-07-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4352930B2 (ja) * 2003-02-26 2009-10-28 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
TW585291U (en) * 2003-03-25 2004-04-21 Quanta Comp Inc A strap buckle apparatus for a notebook computer
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
JP4488005B2 (ja) 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
KR101178754B1 (ko) 2003-04-10 2012-09-07 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
KR20170064003A (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
CN106444292A (zh) 2003-04-11 2017-02-22 株式会社尼康 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置
KR101178756B1 (ko) 2003-04-11 2012-08-31 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI282487B (en) 2003-05-23 2007-06-11 Canon Kk Projection optical system, exposure apparatus, and device manufacturing method
JP2004349645A (ja) * 2003-05-26 2004-12-09 Sony Corp 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
DE60308161T2 (de) * 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1494074A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20060027832A (ko) 2003-07-01 2006-03-28 가부시키가이샤 니콘 광학 엘리먼트로서 동위원소적으로 특정된 유체를 사용하는방법
WO2005006415A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101590686B1 (ko) 2003-09-03 2016-02-01 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置製造方法
EP1695148B1 (en) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersion objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP5106858B2 (ja) 2003-12-15 2012-12-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 高開口数と平面状端面とを有する投影対物レンズ
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102830487A (zh) 2004-01-14 2012-12-19 卡尔蔡司Smt有限责任公司 反射折射投影物镜
CN101799637B (zh) 2004-01-16 2012-07-04 卡尔蔡司Smt有限责任公司 照明光学装置、显微光刻投射系统及装置制造方法
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
JP4843503B2 (ja) 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
JP2007520893A (ja) 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
KR101115111B1 (ko) 2004-02-13 2012-04-16 칼 짜이스 에스엠티 게엠베하 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈
EP1721201A1 (en) 2004-02-18 2006-11-15 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205180A1 (en) * 2004-03-16 2005-09-22 Goudeau Michael C Method and apparatus for three dimensional object covers
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) * 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US20050241694A1 (en) 2004-04-29 2005-11-03 Red Flame Hot Tap Services Ltd. Hot tapping method, system and apparatus
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (en) 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US20060244938A1 (en) 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
CN100483174C (zh) 2004-05-17 2009-04-29 卡尔蔡司Smt股份公司 具有中间图像的反射折射投影物镜
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1759248A1 (en) 2004-06-04 2007-03-07 Carl Zeiss SMT AG Projection system with compensation of intensity variatons and compensation element therefor
US7796274B2 (en) 2004-06-04 2010-09-14 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
US8717533B2 (en) * 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
TW200423118A (en) * 2002-12-13 2004-11-01 Koninkl Philips Electronics Nv Liquid removal in a method and device for irradiating spots on a layer

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