TWI399779B - 使離子束與樣本相互作用的方法 - Google Patents

使離子束與樣本相互作用的方法 Download PDF

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Publication number
TWI399779B
TWI399779B TW095142345A TW95142345A TWI399779B TW I399779 B TWI399779 B TW I399779B TW 095142345 A TW095142345 A TW 095142345A TW 95142345 A TW95142345 A TW 95142345A TW I399779 B TWI399779 B TW I399779B
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Taiwan
Prior art keywords
sample
ion beam
tip
ion
less
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TW095142345A
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English (en)
Chinese (zh)
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TW200733166A (en
Inventor
沃德 比利Ｗ
諾提四世 約翰Ａ
Ｓ 法卡斯三世 路易士
Ｇ 柏西佛 藍道爾
希爾 雷蒙
馬克渥特 拉爾斯
艾德霍 德克
Original Assignee
艾莉絲公司
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Priority claimed from US11/385,136 external-priority patent/US20070228287A1/en
Priority claimed from US11/385,215 external-priority patent/US7601953B2/en
Application filed by 艾莉絲公司 filed Critical 艾莉絲公司
Publication of TW200733166A publication Critical patent/TW200733166A/zh
Application granted granted Critical
Publication of TWI399779B publication Critical patent/TWI399779B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/024—Moving components not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20264—Piezoelectric devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2555—Microprobes, i.e. particle-induced X-ray spectrometry
    • H01J2237/2566—Microprobes, i.e. particle-induced X-ray spectrometry ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/262—Non-scanning techniques
    • H01J2237/2623—Field-emission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2812—Emission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30477—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H01J2237/31737—Direct-write microstructures using ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Tubes For Measurement (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
TW095142345A 2005-12-02 2006-11-15 使離子束與樣本相互作用的方法 TWI399779B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US74195605P 2005-12-02 2005-12-02
US78438806P 2006-03-20 2006-03-20
US78439006P 2006-03-20 2006-03-20
US78450006P 2006-03-20 2006-03-20
US78433106P 2006-03-20 2006-03-20
US11/385,136 US20070228287A1 (en) 2006-03-20 2006-03-20 Systems and methods for a gas field ionization source
US11/385,215 US7601953B2 (en) 2006-03-20 2006-03-20 Systems and methods for a gas field ion microscope
US79580606P 2006-04-28 2006-04-28
US79920306P 2006-05-09 2006-05-09

Publications (2)

Publication Number Publication Date
TW200733166A TW200733166A (en) 2007-09-01
TWI399779B true TWI399779B (zh) 2013-06-21

Family

ID=37907217

Family Applications (11)

Application Number Title Priority Date Filing Date
TW095142345A TWI399779B (zh) 2005-12-02 2006-11-15 使離子束與樣本相互作用的方法
TW095142350A TWI407475B (zh) 2005-12-02 2006-11-15 使離子束與樣本相互作用的方法、以離子噴濺樣本的方法、以離子束與電子束研究樣本的方法、結合掃描電子顯微鏡與氣體場離子源的系統
TW103131105A TWI518737B (zh) 2005-12-02 2006-11-15 離子顯微鏡系統及離子顯微鏡操作方法
TW095142346A TWI463524B (zh) 2005-12-02 2006-11-15 離子顯微鏡、離子源系統
TW095142349A TWI463515B (zh) 2005-12-02 2006-11-15 產生離子束的系統
TW103131106A TWI538009B (zh) 2005-12-02 2006-11-15 離子源顯微鏡系統
TW103131293A TWI538004B (zh) 2005-12-02 2006-11-15 離子顯微鏡操作方法
TW103131500A TWI538005B (zh) 2005-12-02 2006-11-15 離子束產生系統
TW095142348A TWI463525B (zh) 2005-12-02 2006-11-15 用於樣本分析的系統
TW095142344A TWI406318B (zh) 2005-12-02 2006-11-15 製作氣體場離子系統的方法、對準離子源與離子光學系統的方法、形成氣體場離子源之導電尖端的方法、離子源系統、從離子束移除化學物種的方法、氣體場離子系統、產生及使用離子源的方法
TW095142347A TWI463514B (zh) 2005-12-02 2006-11-15 處理樣本之方法

Family Applications After (10)

Application Number Title Priority Date Filing Date
TW095142350A TWI407475B (zh) 2005-12-02 2006-11-15 使離子束與樣本相互作用的方法、以離子噴濺樣本的方法、以離子束與電子束研究樣本的方法、結合掃描電子顯微鏡與氣體場離子源的系統
TW103131105A TWI518737B (zh) 2005-12-02 2006-11-15 離子顯微鏡系統及離子顯微鏡操作方法
TW095142346A TWI463524B (zh) 2005-12-02 2006-11-15 離子顯微鏡、離子源系統
TW095142349A TWI463515B (zh) 2005-12-02 2006-11-15 產生離子束的系統
TW103131106A TWI538009B (zh) 2005-12-02 2006-11-15 離子源顯微鏡系統
TW103131293A TWI538004B (zh) 2005-12-02 2006-11-15 離子顯微鏡操作方法
TW103131500A TWI538005B (zh) 2005-12-02 2006-11-15 離子束產生系統
TW095142348A TWI463525B (zh) 2005-12-02 2006-11-15 用於樣本分析的系統
TW095142344A TWI406318B (zh) 2005-12-02 2006-11-15 製作氣體場離子系統的方法、對準離子源與離子光學系統的方法、形成氣體場離子源之導電尖端的方法、離子源系統、從離子束移除化學物種的方法、氣體場離子系統、產生及使用離子源的方法
TW095142347A TWI463514B (zh) 2005-12-02 2006-11-15 處理樣本之方法

Country Status (6)

Country Link
EP (13) EP1955351B1 (cg-RX-API-DMAC10.html)
JP (15) JP5292545B2 (cg-RX-API-DMAC10.html)
KR (12) KR101196026B1 (cg-RX-API-DMAC10.html)
CN (3) CN102364659B (cg-RX-API-DMAC10.html)
TW (11) TWI399779B (cg-RX-API-DMAC10.html)
WO (10) WO2007067296A2 (cg-RX-API-DMAC10.html)

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