JP5292545B2 - イオン源、システム及び方法 - Google Patents

イオン源、システム及び方法 Download PDF

Info

Publication number
JP5292545B2
JP5292545B2 JP2008543314A JP2008543314A JP5292545B2 JP 5292545 B2 JP5292545 B2 JP 5292545B2 JP 2008543314 A JP2008543314 A JP 2008543314A JP 2008543314 A JP2008543314 A JP 2008543314A JP 5292545 B2 JP5292545 B2 JP 5292545B2
Authority
JP
Japan
Prior art keywords
sample
ion beam
tip
ion
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008543314A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009517841A (ja
Inventor
ダブリュー ワード ビリー
エイ ノッテ ザ フォース ジョン
エス ファルカス ザ サード ルイス
ジー パーシヴァル ランドール
ヒル レイモンド
Original Assignee
カール ツァイス マイクロスコーピー エルエルシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/385,215 external-priority patent/US7601953B2/en
Priority claimed from US11/385,136 external-priority patent/US20070228287A1/en
Application filed by カール ツァイス マイクロスコーピー エルエルシー filed Critical カール ツァイス マイクロスコーピー エルエルシー
Publication of JP2009517841A publication Critical patent/JP2009517841A/ja
Application granted granted Critical
Publication of JP5292545B2 publication Critical patent/JP5292545B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/024—Moving components not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20264—Piezoelectric devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2555—Microprobes, i.e. particle-induced X-ray spectrometry
    • H01J2237/2566—Microprobes, i.e. particle-induced X-ray spectrometry ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/262—Non-scanning techniques
    • H01J2237/2623—Field-emission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2812—Emission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30477—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H01J2237/31737—Direct-write microstructures using ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Tubes For Measurement (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2008543314A 2005-12-02 2006-11-15 イオン源、システム及び方法 Expired - Fee Related JP5292545B2 (ja)

Applications Claiming Priority (19)

Application Number Priority Date Filing Date Title
US74195605P 2005-12-02 2005-12-02
US60/741,956 2005-12-02
US78439006P 2006-03-20 2006-03-20
US78433106P 2006-03-20 2006-03-20
US78450006P 2006-03-20 2006-03-20
US78438806P 2006-03-20 2006-03-20
US11/385,215 2006-03-20
US60/784,388 2006-03-20
US60/784,331 2006-03-20
US11/385,136 2006-03-20
US11/385,215 US7601953B2 (en) 2006-03-20 2006-03-20 Systems and methods for a gas field ion microscope
US60/784,390 2006-03-20
US11/385,136 US20070228287A1 (en) 2006-03-20 2006-03-20 Systems and methods for a gas field ionization source
US60/784,500 2006-03-20
US79580606P 2006-04-28 2006-04-28
US60/795,806 2006-04-28
US79920306P 2006-05-09 2006-05-09
US60/799,203 2006-05-09
PCT/US2006/044389 WO2007067314A2 (en) 2005-12-02 2006-11-15 Ion sources, systems and methods

Publications (2)

Publication Number Publication Date
JP2009517841A JP2009517841A (ja) 2009-04-30
JP5292545B2 true JP5292545B2 (ja) 2013-09-18

Family

ID=37907217

Family Applications (15)

Application Number Title Priority Date Filing Date
JP2008543314A Expired - Fee Related JP5292545B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543313A Expired - Fee Related JP5193053B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543311A Expired - Fee Related JP5266447B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543325A Expired - Fee Related JP5155874B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543312A Active JP5302686B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543316A Expired - Fee Related JP5173828B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543318A Expired - Fee Related JP5043855B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543317A Pending JP2009517844A (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543315A Expired - Fee Related JP5193054B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2011232869A Expired - Fee Related JP5508371B2 (ja) 2005-12-02 2011-10-24 システム
JP2011259420A Active JP5656811B2 (ja) 2005-12-02 2011-11-28 イオン源、システム及び方法
JP2011266313A Pending JP2012098294A (ja) 2005-12-02 2011-12-05 イオン源、システム及び方法
JP2012026734A Expired - Fee Related JP5766133B2 (ja) 2005-12-02 2012-02-09 方法
JP2012032193A Pending JP2012142292A (ja) 2005-12-02 2012-02-16 イオン源、システム及び方法
JP2012154808A Expired - Fee Related JP5643262B2 (ja) 2005-12-02 2012-07-10 イオン源、システム及び方法

Family Applications After (14)

Application Number Title Priority Date Filing Date
JP2008543313A Expired - Fee Related JP5193053B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543311A Expired - Fee Related JP5266447B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543325A Expired - Fee Related JP5155874B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543312A Active JP5302686B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543316A Expired - Fee Related JP5173828B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543318A Expired - Fee Related JP5043855B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543317A Pending JP2009517844A (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2008543315A Expired - Fee Related JP5193054B2 (ja) 2005-12-02 2006-11-15 イオン源、システム及び方法
JP2011232869A Expired - Fee Related JP5508371B2 (ja) 2005-12-02 2011-10-24 システム
JP2011259420A Active JP5656811B2 (ja) 2005-12-02 2011-11-28 イオン源、システム及び方法
JP2011266313A Pending JP2012098294A (ja) 2005-12-02 2011-12-05 イオン源、システム及び方法
JP2012026734A Expired - Fee Related JP5766133B2 (ja) 2005-12-02 2012-02-09 方法
JP2012032193A Pending JP2012142292A (ja) 2005-12-02 2012-02-16 イオン源、システム及び方法
JP2012154808A Expired - Fee Related JP5643262B2 (ja) 2005-12-02 2012-07-10 イオン源、システム及び方法

Country Status (6)

Country Link
EP (13) EP1955351B1 (cg-RX-API-DMAC10.html)
JP (15) JP5292545B2 (cg-RX-API-DMAC10.html)
KR (12) KR101196026B1 (cg-RX-API-DMAC10.html)
CN (3) CN102364659B (cg-RX-API-DMAC10.html)
TW (11) TWI399779B (cg-RX-API-DMAC10.html)
WO (10) WO2007067296A2 (cg-RX-API-DMAC10.html)

Families Citing this family (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100475411B1 (ko) * 2002-11-22 2005-03-10 주식회사 민경종합식품 즉석 어묵죽의 제조방법
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7427765B2 (en) 2005-10-03 2008-09-23 Jeol, Ltd. Electron beam column for writing shaped electron beams
WO2008152132A2 (en) * 2007-06-15 2008-12-18 Interuniversitair Microelektronica Centrum Vzw (Imec) Apparatus and method for performing secondary ion mass spectroscopy
EP2012341B1 (en) * 2007-07-06 2012-05-02 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Modular gas ion source
GB0713276D0 (en) 2007-07-09 2007-08-15 Medical Res Council Transmission electron microscope
US8274063B2 (en) * 2007-08-08 2012-09-25 Sii Nanotechnology Inc. Composite focused ion beam device, process observation method using the same, and processing method
JPWO2009020150A1 (ja) * 2007-08-08 2010-11-04 エスアイアイ・ナノテクノロジー株式会社 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法
EP2068345B1 (en) * 2007-12-05 2016-07-20 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High resolution gas field ion column with reduced sample load
JP4887344B2 (ja) * 2007-12-14 2012-02-29 株式会社日立ハイテクノロジーズ ガス電界電離イオン源，走査荷電粒子顕微鏡，光軸調整方法、及び試料観察方法
JP5086105B2 (ja) * 2008-01-07 2012-11-28 株式会社日立ハイテクノロジーズ ガス電界電離イオン源
WO2009111149A1 (en) * 2008-03-03 2009-09-11 Alis Corporation Gas field ion source with coated tip
WO2009154953A2 (en) * 2008-06-20 2009-12-23 Carl Zeiss Smt Inc. Sample inspection methods, systems and components
CN101929965B (zh) * 2008-09-04 2012-09-05 汉民微测科技股份有限公司 带电粒子检测装置及检测方法
US7973283B2 (en) * 2008-09-25 2011-07-05 Hermes Microvision, Inc. Method for regulating scanning sample surface charge in continuous and leap-and-scan scanning mode imaging process
DE112010000799B4 (de) * 2009-01-15 2020-12-17 Hitachi High-Tech Corporation Ionenstrahlvorrichtung
EP2211366B1 (en) * 2009-01-23 2011-10-19 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High resolution gas field ion column
JP5410786B2 (ja) 2009-02-27 2014-02-05 株式会社日立ハイテクサイエンス 集束イオンビーム装置
WO2010132221A2 (en) * 2009-05-12 2010-11-18 Carl Zeiss Nts, Llc. Gas field ion microscopes having multiple operation modes
WO2010144267A1 (en) * 2009-06-12 2010-12-16 Carl Zeiss Nts, Llc Method and system for heating a tip apex of a charged particle source
EP2446459B1 (en) * 2009-06-24 2015-04-01 Carl Zeiss Microscopy, LLC Charged particle detectors
US20120132802A1 (en) * 2009-06-30 2012-05-31 Noriaki Arai Gas field ionization ion source apparatus and scanning charged particle microscope equipped with same
JP5383419B2 (ja) * 2009-10-14 2014-01-08 株式会社日立ハイテクノロジーズ イオンビーム装置
JP5989959B2 (ja) 2010-02-16 2016-09-07 株式会社日立ハイテクサイエンス 集束イオンビーム装置
EP2365511B1 (en) 2010-03-10 2013-05-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Feedback loop for emitter flash cleaning
KR101801106B1 (ko) 2010-05-17 2017-11-24 삼성전자주식회사 디지털 방송 송신기, 디지털 방송 수신기 및 그들의 스트림 구성 및 처리 방법
JP5553308B2 (ja) * 2010-06-28 2014-07-16 独立行政法人理化学研究所 軽元素分析装置及び分析方法
US8847173B2 (en) 2010-08-06 2014-09-30 Hitachi High-Technologies Corporation Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same
EP2444990B1 (en) * 2010-10-19 2014-06-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Simplified particle emitter and method of operating thereof
JP6043476B2 (ja) * 2011-10-12 2016-12-14 株式会社日立ハイテクノロジーズ イオン源およびそれを用いたイオンビーム装置
US10088413B2 (en) 2011-11-21 2018-10-02 Kla-Tencor Corporation Spectral matching based calibration
JP5896708B2 (ja) 2011-12-06 2016-03-30 株式会社日立ハイテクノロジーズ 走査イオン顕微鏡および二次粒子制御方法
US8604427B2 (en) * 2012-02-02 2013-12-10 Applied Materials Israel, Ltd. Three-dimensional mapping using scanning electron microscope images
US9018597B2 (en) * 2012-04-03 2015-04-28 Hitachi High-Technologies Corporation Gas field ionization ion source and ion beam apparatus
KR101975520B1 (ko) * 2012-05-08 2019-08-28 한국전자통신연구원 고에너지 입자 분석 장치 및 이를 이용한 분석 방법
JP5677365B2 (ja) * 2012-05-11 2015-02-25 株式会社日立ハイテクノロジーズ 荷電粒子顕微鏡
CN104428867B (zh) 2012-07-16 2018-10-16 Fei 公司 用于聚焦离子束处理的终点确定
CN103632912A (zh) * 2012-08-21 2014-03-12 B-纳诺有限公司 电子显微镜成像系统及方法
US9341752B2 (en) * 2012-11-07 2016-05-17 Asml Netherlands B.V. Viewport protector for an extreme ultraviolet light source
JP5963662B2 (ja) * 2012-12-04 2016-08-03 住友重機械イオンテクノロジー株式会社 イオン注入装置
JP2014130077A (ja) 2012-12-28 2014-07-10 Hitachi High-Technologies Corp パターン形状評価方法、半導体装置の製造方法及びパターン形状評価装置
JP6116303B2 (ja) 2013-03-25 2017-04-19 株式会社日立ハイテクサイエンス 集束イオンビーム装置
JP6112930B2 (ja) 2013-03-26 2017-04-12 株式会社日立ハイテクサイエンス ガスイオン源、及び集束イオンビーム装置
JP6222805B2 (ja) 2013-03-26 2017-11-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置および観察像形成方法
JP6126425B2 (ja) 2013-03-27 2017-05-10 株式会社日立ハイテクサイエンス 集束イオンビーム装置及びその制御方法
JP6292565B2 (ja) * 2013-05-16 2018-03-14 国立研究開発法人産業技術総合研究所 粒子分析方法および粒子分析装置
JP5591378B2 (ja) * 2013-05-27 2014-09-17 株式会社日立ハイテクノロジーズ ガス電界電離イオン源、イオンビーム装置
JP6258801B2 (ja) * 2013-07-08 2018-01-10 カール ツァイス マイクロスコーピー エルエルシー 荷電粒子ビームシステム
US9530612B2 (en) 2013-07-08 2016-12-27 Carl Zeiss Microscopy, Llc Charged particle beam system and method of operating a charged particle beam system
JP6165110B2 (ja) * 2013-07-08 2017-07-19 カール ツァイス マイクロスコーピー エルエルシー 荷電粒子ビームシステム
DE102013011491B4 (de) 2013-07-09 2025-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Partikelstrahlmikroskops und Partikelstrahlmikroskop
DE102013213501A1 (de) 2013-07-10 2015-01-15 Carl Zeiss Microscopy Gmbh Massenspektrometer, dessen Verwendung, sowie Verfahren zur massenspektrometrischen Untersuchung eines Gasgemisches
JP6490917B2 (ja) 2013-08-23 2019-03-27 株式会社日立ハイテクサイエンス 修正装置
CN105792890A (zh) * 2013-11-21 2016-07-20 三菱电机株式会社 粒子射线治疗装置
JP6316578B2 (ja) * 2013-12-02 2018-04-25 株式会社日立ハイテクノロジーズ 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡
JP6529264B2 (ja) * 2014-01-22 2019-06-12 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置および試料観察方法
US9934969B2 (en) 2014-01-31 2018-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Charged-particle-beam patterning without resist
CN103868773A (zh) * 2014-03-24 2014-06-18 上海华力微电子有限公司 透射电镜样品的制作方法
DE102014008083B9 (de) 2014-05-30 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
US10216087B2 (en) 2014-06-13 2019-02-26 Intel Corporation Ebeam universal cutter
KR102377771B1 (ko) 2014-06-13 2022-03-23 인텔 코포레이션 Ｅ 빔 스태거형 빔 애퍼처 어레이
WO2015191105A1 (en) 2014-06-13 2015-12-17 Intel Corporation Ebeam three beam aperture array
JP6367618B2 (ja) * 2014-06-27 2018-08-01 国立研究開発法人物質・材料研究機構 軽元素分析装置及び軽元素分析方法
US9715724B2 (en) 2014-07-29 2017-07-25 Applied Materials Israel Ltd. Registration of CAD data with SEM images
WO2016070939A1 (en) * 2014-11-07 2016-05-12 Applied Materials, Inc. Apparatus and method for treatment of flexible substrates using an electron beam
US9918073B2 (en) * 2014-12-22 2018-03-13 Google Llc Integrated camera system having two dimensional image capture and three dimensional time-of-flight capture with movable illuminated region of interest
JP6177817B2 (ja) 2015-01-30 2017-08-09 松定プレシジョン株式会社 荷電粒子線装置及び走査電子顕微鏡
JP6204388B2 (ja) * 2015-01-30 2017-09-27 松定プレシジョン株式会社 荷電粒子線装置及び走査電子顕微鏡
JP6584786B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
CN107533017B (zh) * 2015-03-23 2021-01-08 泰科英赛科技有限公司 与成像装置中失真校正相关的方法、系统和装置
US9536697B2 (en) * 2015-05-19 2017-01-03 Hermes Microvision Inc. System and method for calibrating charge-regulating module
JP2017033889A (ja) * 2015-08-06 2017-02-09 国立研究開発法人物質・材料研究機構 試料載置ユニット、真空オペランド測定装置、及びリチウムイオン二次電池を用いたオペランド測定方法
WO2017029742A1 (ja) 2015-08-20 2017-02-23 株式会社日立ハイテクノロジーズ イオンビーム装置およびガス電界電離イオン源の洗浄方法
US10785394B2 (en) * 2015-08-28 2020-09-22 Kla Corporation Imaging performance optimization methods for semiconductor wafer inspection
EP3157041A1 (en) * 2015-10-13 2017-04-19 FEI Company Investigation of high-temperature specimens in a charged particle microscope
US10354830B2 (en) 2016-04-06 2019-07-16 Carl Zeiss Microscopy, Llc Charged particle beam system
CN106024573B (zh) * 2016-06-29 2018-10-26 苏州微木智能系统有限公司 一种光电发射电离源
JP7270540B2 (ja) * 2016-10-14 2023-05-10 エヴァテック・アーゲー スパッタリングソース
US9922796B1 (en) * 2016-12-01 2018-03-20 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
KR102260984B1 (ko) * 2016-12-12 2021-06-03 어플라이드 머티어리얼스, 인코포레이티드 기판을 검사하기 위한 방법 및 명령들이 저장된 컴퓨터 판독가능 매체
JP7113613B2 (ja) * 2016-12-21 2022-08-05 エフ イー アイ カンパニ 欠陥分析
JP6771767B2 (ja) * 2017-02-15 2020-10-21 株式会社日立ハイテクサイエンス 集束イオンビーム装置
JP6909618B2 (ja) 2017-04-19 2021-07-28 株式会社日立ハイテクサイエンス イオンビーム装置
JP6943701B2 (ja) * 2017-09-15 2021-10-06 日本電子株式会社 冷陰極電界放出型電子銃の調整方法
CN111213219B (zh) * 2017-09-19 2023-03-10 Asml荷兰有限公司 带电粒子束装置以及操作该装置的系统和方法
WO2019066802A1 (en) * 2017-09-27 2019-04-04 Intel Corporation ELECTRON BEAM SURFING FOR CHIP DEBUGGING AND DEFAULT ISOLATION
JP7073668B2 (ja) * 2017-10-25 2022-05-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
JP7007642B2 (ja) 2017-11-30 2022-02-10 国立大学法人北陸先端科学技術大学院大学 単原子終端構造を有するティップおよび単原子終端構造を有するティップの製造方法
JP7217913B2 (ja) * 2018-02-16 2023-02-06 株式会社日立ハイテクサイエンス プラスチック標準物質の製造方法
CN110506236B (zh) * 2018-02-22 2021-12-03 应用材料公司 用于显示器制造的基板上的自动临界尺寸测量的方法、用于检查用于显示器制造的大面积基板的方法和设备和操作所述设备的方法
US11244802B2 (en) * 2018-02-28 2022-02-08 Hitachi High-Tech Corporation Ion milling device and ion source adjusting method for ion milling device
US10714307B2 (en) * 2018-06-08 2020-07-14 Kla-Tencor Corporation Neutral atom imaging system
US11087956B2 (en) 2018-06-29 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Detection systems in semiconductor metrology tools
US10504684B1 (en) * 2018-07-12 2019-12-10 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High performance inspection scanning electron microscope device and method of operating the same
US10490397B1 (en) 2018-07-18 2019-11-26 Thermo Finnigan Llc Methods and systems for detection of ion spatial distribution
CN109298005B (zh) * 2018-08-15 2019-06-28 中国科学院地质与地球物理研究所 聚焦离子束—氦离子显微镜对页岩纳米孔隙三维成像方法
WO2020044429A1 (ja) * 2018-08-28 2020-03-05 株式会社日立ハイテクノロジーズ イオンビーム装置
TWI719666B (zh) * 2018-10-16 2021-02-21 美商卡爾蔡司Ｓｍｔ公司 在半導體物件上移動結構的方法及檢驗半導體物件的檢驗裝置
US12001521B2 (en) 2018-11-08 2024-06-04 Hitachi High-Tech Corporation Adjusting method of charged particle beam device and charged particle beam device system
US11640898B2 (en) * 2018-12-17 2023-05-02 Applied Materials, Inc. Methods of optical device fabrication using an ion beam source
EP3909066A4 (en) * 2019-01-08 2022-11-09 Applied Materials Israel, Ltd. SCANNING ELECTRON MICROSCOPE AND METHODS FOR OVERLAY MONITORING
CN109752401A (zh) * 2019-01-16 2019-05-14 清华大学 具有实时原位检测功能的增材制造装置及方法
JP7091263B2 (ja) * 2019-01-22 2022-06-27 株式会社日立ハイテク 電子顕微鏡及び３次元構造の深さ算出方法
DE102019201468B4 (de) * 2019-02-05 2025-05-15 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Reparieren einer fotolithographischen Maske
JP6696019B2 (ja) * 2019-02-22 2020-05-20 株式会社日立ハイテク イオンビーム装置、及びその作動方法
KR102114135B1 (ko) 2019-02-28 2020-05-22 서강대학교산학협력단 현미경 장치 및 현미경 장치의 동작방법
JP2020145157A (ja) * 2019-03-08 2020-09-10 キオクシア株式会社 アトムプローブ検査装置、電界イオン顕微鏡および歪み補正方法
KR102213033B1 (ko) * 2019-05-23 2021-02-05 (주)화인솔루션 이온빔 스퍼터링 장치
CN110208302B (zh) * 2019-07-05 2021-03-23 北京师范大学 一种粒子激发x射线荧光分析深度分辨的装置及方法
CN110320191A (zh) * 2019-07-05 2019-10-11 北京师范大学 原位分析离子辐照损伤光学特征深度分布的装置及方法
US12041728B2 (en) 2019-08-05 2024-07-16 Apple Inc. Selective soldering with photonic soldering technology
US20210043597A1 (en) * 2019-08-05 2021-02-11 Apple Inc. Selective Soldering with Photonic Soldering Technology
KR102180979B1 (ko) * 2019-08-19 2020-11-19 참엔지니어링(주) 처리 장치 및 방법
US12148593B2 (en) 2019-09-17 2024-11-19 Hitachi High-Tech Corporation Ion beam device
JP7360871B2 (ja) * 2019-09-24 2023-10-13 株式会社日立ハイテクサイエンス 荷電粒子ビーム照射装置、及び制御方法
CN113363197B (zh) * 2019-10-30 2023-11-03 长江存储科技有限责任公司 用于校准粒子束的垂直度的方法以及应用于半导体制造工艺的系统
JP6751957B1 (ja) * 2019-11-21 2020-09-09 ジオ・サーチ株式会社 鉄筋腐食度評価装置、鉄筋腐食度評価方法、及びコンピュータプログラム
US12005391B2 (en) 2019-12-11 2024-06-11 Brookhaven Science Associates, Llc Method for trapping noble gas atoms and molecules in oxide nanocages
JP7482411B2 (ja) 2019-12-13 2024-05-14 パナソニックＩｐマネジメント株式会社 金属線
US11615938B2 (en) * 2019-12-20 2023-03-28 Nuflare Technology, Inc. High-resolution multiple beam source
TWI794701B (zh) 2019-12-20 2023-03-01 荷蘭商Ａｓｍｌ荷蘭公司 用於帶電粒子檢測系統之射束電流調整
TWI840644B (zh) * 2020-01-07 2024-05-01 美商思娜公司 顯示器系統及操作顯示器系統的方法
KR102552225B1 (ko) * 2020-02-04 2023-07-06 (주)새론테크놀로지 주사 전자 현미경
US12609264B2 (en) * 2020-03-20 2026-04-21 Asml Netherlands B. V. Apparatus using enhanced deflectors to manipulate charged particle beams
US11079405B1 (en) * 2020-05-05 2021-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for detecting ferroelectric signal
CN111958576A (zh) * 2020-08-11 2020-11-20 旻投电力发展有限公司 一种端部带缓冲的可回转姿态控制臂架
WO2022070258A1 (ja) * 2020-09-29 2022-04-07 株式会社日立ハイテク 半導体検査装置および半導体試料の検査方法
CN114551200B (zh) * 2020-11-19 2024-11-08 中微半导体设备(上海)股份有限公司 一种绝缘窗及其控制方法、及等离子体处理装置
CN112863979B (zh) * 2021-01-14 2022-02-08 西安交通大学 一种微纳尺度离子束外束引出装置
CN114914142B (zh) * 2021-02-08 2025-02-14 中微半导体设备(上海)股份有限公司 下电极组件和等离子体处理装置
US11958111B2 (en) 2021-02-22 2024-04-16 General Electric Company Gaseous ionization detectors for monitoring and controlling energy beams used to additively manufacture three-dimensional objects
CN112557130B (zh) * 2021-02-28 2021-04-30 中国工程物理研究院核物理与化学研究所 一种气体探测器充入气体的方法
EP4308895A4 (en) * 2021-03-17 2024-10-09 Forcen Inc. Force and torque sensor with overload structure and method for manufacturing
TWI811653B (zh) * 2021-03-30 2023-08-11 台灣積體電路製造股份有限公司 樣品載台及修飾樣品的系統及方法
CN113109595B (zh) * 2021-04-09 2022-12-02 南方科技大学 一种解析静电与力电耦合响应的原子力显微方法及系统
KR20240035391A (ko) * 2021-05-14 2024-03-15 샤인 테크놀로지스 엘엘씨 효율적인 이온 수집을 갖는 이온 생산 시스템
CN113325017A (zh) * 2021-06-02 2021-08-31 苏州鑫之博科技有限公司 一种用于高能束加工的设备及二次电子探测方法
AU2022358410A1 (en) 2021-10-01 2024-04-11 Shine Technologies, Llc Ion production system with fibrous lattice for ion collection
KR102576105B1 (ko) * 2021-10-12 2023-09-11 에이치비솔루션(주) 시료 분석 시스템
KR102997850B1 (ko) * 2022-02-16 2026-07-30 어플라이드 머티어리얼스, 인코포레이티드 기판의 인-라인 검사 방법, 주사 전자 현미경, 및 컴퓨터 판독가능 매체
JP7764801B2 (ja) * 2022-05-13 2025-11-06 株式会社ニューフレアテクノロジー 被覆率算出方法、荷電粒子ビーム描画方法、被覆率算出装置及び荷電粒子ビーム描画装置
US12386164B2 (en) * 2022-10-14 2025-08-12 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Method of determining a brightness of a charged particle beam, method of determining a size of a source of the charged particle beam, and charged particle beam imaging device
US20240222070A1 (en) * 2022-12-29 2024-07-04 Applied Materials, Inc. Xray diffraction angle verification in an ion implanter
US20260221384A1 (en) * 2023-01-31 2026-07-30 Hitachi High-Tech Corporation Processing Method and Charged Particle Beam Device
US12676280B2 (en) 2023-06-12 2026-07-07 Airsem Technologies Ltd. Charged particle beam devices and membrane assemblies useful therein
JP7606798B1 (ja) * 2024-03-25 2024-12-26 中和科学株式会社 荷電粒子銃
WO2025203155A1 (ja) * 2024-03-25 2025-10-02 中和科学株式会社 荷電粒子源制御装置
US20260066215A1 (en) * 2024-08-27 2026-03-05 Fei Company Controlling incidence angle of ion beam by sample biasing

Family Cites Families (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7005A (en) * 1850-01-08 Improvement in coating iron with copper or its alloy
GB1180894A (en) * 1967-06-20 1970-02-11 Nat Res Dev Atom Probe Field Ion Microscope.
JPS52142580A (en) 1976-05-21 1977-11-28 Hitachi Ltd Ion microanalyzer
US4139773A (en) * 1977-11-04 1979-02-13 Oregon Graduate Center Method and apparatus for producing bright high resolution ion beams
US4364949A (en) * 1979-12-21 1982-12-21 Ciba-Geigy Corporation Hydroxyphenyl ketones
JPS57132632A (en) * 1981-02-09 1982-08-17 Hitachi Ltd Ion source
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS58102454A (ja) * 1981-12-14 1983-06-18 Jeol Ltd イオン分析装置
EP0107320A3 (en) * 1982-09-17 1986-11-20 Dubilier Scientific Limited Improvements relating to ion-beam apparatus
JPS6062045A (ja) * 1983-09-14 1985-04-10 Hitachi Ltd イオンマイクロビ−ム打込み装置
US4697986A (en) 1984-03-26 1987-10-06 David Constant V Helicopter blade cyclic pitch control system
JPH0616391B2 (ja) * 1984-07-13 1994-03-02 株式会社日立製作所 イオンビーム照射装置
JPS61158658A (ja) * 1984-12-29 1986-07-18 Shimadzu Corp 複合表面評価装置
US4633084A (en) * 1985-01-16 1986-12-30 The United States Of America As Represented By The United States Department Of Energy High efficiency direct detection of ions from resonance ionization of sputtered atoms
JPS61171048A (ja) * 1985-01-25 1986-08-01 Anelva Corp 分析装置
JPS61217748A (ja) * 1985-03-22 1986-09-27 Shimadzu Corp 複合表面分析装置
JPS61250928A (ja) * 1985-04-27 1986-11-08 Jeol Ltd ガスフエ−ズイオン源
JPS6251134A (ja) * 1985-08-29 1987-03-05 Fujitsu Ltd 電界電離型ガスイオン源
JPS62114226A (ja) * 1985-11-14 1987-05-26 Fujitsu Ltd イオンビ−ム露光装置
DE3610540A1 (de) * 1986-03-27 1987-10-01 Kernforschungsanlage Juelich Bewegungseinrichtung zur mikrobewegung von objekten
JPH0828197B2 (ja) * 1986-06-27 1996-03-21 ソニー株式会社 イオンビ−ム装置
JPS6210840A (ja) * 1986-07-18 1987-01-19 Hitachi Ltd イオン源
JPS6340241A (ja) * 1986-08-05 1988-02-20 Nec Corp イオンビ−ム装置
JPH0828190B2 (ja) * 1986-08-12 1996-03-21 ソニー株式会社 イオンビ−ム装置
JPH0665010B2 (ja) * 1986-09-26 1994-08-22 日電アネルバ株式会社 電界電離ガスイオン源
JPS63105452A (ja) 1986-10-22 1988-05-10 Hitachi Ltd 荷電ビ−ム照射系
JPH0514452Y2 (cg-RX-API-DMAC10.html) * 1987-01-10 1993-04-16
JPS63187542A (ja) * 1987-01-28 1988-08-03 Hitachi Ltd イオンマイクロビ−ム装置
JPS63200434A (ja) * 1987-02-13 1988-08-18 Sony Corp イオンビ−ム発生装置
JPS6410548A (en) * 1987-07-03 1989-01-13 Jeol Ltd Gas phase ion source
JPS6424340A (en) * 1987-07-20 1989-01-26 Fujitsu Ltd Emitter for electric field ionization type gas ion source
JPS6444555A (en) * 1987-08-11 1989-02-16 Nec Corp Memory capacity decision system for information processor
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH0680662B2 (ja) * 1987-12-02 1994-10-12 株式会社日立製作所 Ｉｃ素子の修正方法
JP2752626B2 (ja) * 1988-01-22 1998-05-18 日本電気株式会社 電界電離ガスイオン化方法とそのイオン源
JPH01221847A (ja) * 1988-03-01 1989-09-05 Agency Of Ind Science & Technol ガスフェーズイオン源における高圧導入部
JP2753306B2 (ja) * 1988-03-18 1998-05-20 株式会社日立製作所 イオンビーム加工方法及び集束イオンビーム装置
US4985634A (en) * 1988-06-02 1991-01-15 Oesterreichische Investitionskredit Aktiengesellschaft And Ionen Mikrofabrications Ion beam lithography
JPH0237649A (ja) * 1988-07-26 1990-02-07 Sony Corp 電界電離型イオン源
JPH0254851A (ja) * 1988-08-17 1990-02-23 Fujitsu Ltd 電界電離型ガスイオン源の制御方法
JPH0260041A (ja) * 1988-08-25 1990-02-28 T Ee C Gijutsu Kagaku Kenkyusho:Kk 二次元検出器及び該検出器を用いた二次イオン質量分析装置
JPH0261941A (ja) * 1988-08-26 1990-03-01 Sony Corp 電界電離型イオン源
JPH071686B2 (ja) * 1988-09-22 1995-01-11 株式会社日立製作所 イオンマイクロアナライザ
JP2789610B2 (ja) * 1988-09-24 1998-08-20 ソニー株式会社 集束イオンビーム装置のエミッターの加工方法
JP2867389B2 (ja) * 1988-10-17 1999-03-08 ソニー株式会社 イオンビーム装置およびその使用方法
EP0366851B1 (en) * 1988-11-01 1994-02-16 International Business Machines Corporation Low-voltage source for narrow electron/ion beams
JPH02230641A (ja) * 1989-03-03 1990-09-13 Nec Corp イオンビーム発生装置
US5083033A (en) * 1989-03-31 1992-01-21 Kabushiki Kaisha Toshiba Method of depositing an insulating film and a focusing ion beam apparatus
JPH02291650A (ja) * 1989-05-01 1990-12-03 Fujitsu Ltd 電界電離型ガスイオン源
US5087815A (en) * 1989-11-08 1992-02-11 Schultz J Albert High resolution mass spectrometry of recoiled ions for isotopic and trace elemental analysis
JP2815658B2 (ja) * 1990-02-16 1998-10-27 株式会社神戸製鋼所 ２次電子像表示装置
JPH03266336A (ja) * 1990-03-15 1991-11-27 Fujitsu Ltd ガスイオン源装置
US5059785A (en) * 1990-05-30 1991-10-22 The United States Of America As Represented By The United States Department Of Energy Backscattering spectrometry device for identifying unknown elements present in a workpiece
JPH088245B2 (ja) 1990-09-28 1996-01-29 株式会社島津製作所 集束イオンビームエッチング装置
JPH04341743A (ja) * 1991-05-16 1992-11-27 Mitsubishi Electric Corp 集束イオンビーム発生装置
JPH04341734A (ja) * 1991-05-17 1992-11-27 Mitsubishi Electric Corp ラスタローテーション装置
JP3084307B2 (ja) * 1991-08-20 2000-09-04 日本真空技術株式会社 イオン注入装置
US5151594A (en) * 1991-10-18 1992-09-29 International Business Machines Corporation Subpicosecond atomic and molecular motion detection and signal transmission by field emission
JPH06192858A (ja) * 1992-12-28 1994-07-12 Mitsubishi Electric Corp 集束イオンビーム発生装置
JPH06231716A (ja) * 1993-02-09 1994-08-19 Hitachi Ltd イオンマイクロビーム装置
JP3117836B2 (ja) * 1993-03-02 2000-12-18 セイコーインスツルメンツ株式会社 集束イオンビーム装置
JPH0721955A (ja) * 1993-06-29 1995-01-24 Jeol Ltd イオンビーム装置
JPH0721954A (ja) * 1993-07-01 1995-01-24 Jeol Ltd イオンビーム発生方法および電界電離型ガスフェーズイオン源
JP3058785B2 (ja) * 1993-10-12 2000-07-04 日本電子株式会社 エミッタ製造方法
JPH07192669A (ja) * 1993-12-27 1995-07-28 Jeol Ltd 電界電離型ガスフェーズイオン源の調整方法
JPH07226181A (ja) * 1994-02-08 1995-08-22 Hitachi Ltd イオン散乱表面分析装置
JPH07230783A (ja) * 1994-02-17 1995-08-29 Technova:Kk 水素イオンビーム発生装置
JPH07272653A (ja) * 1994-03-29 1995-10-20 Jeol Ltd 電界電離型ガスフェーズイオン源の調整方法およびイオンビーム装置
DE4416413C2 (de) * 1994-05-10 1996-03-28 Ion Tof Gmbh Verfahren zum Betreiben eines Flugzeit-Sekundärionen-Massenspektrometers
JPH08220030A (ja) * 1995-02-17 1996-08-30 Nippon Telegr & Teleph Corp <Ntt> 表面分析方法およびその表面分析装置
JPH08222176A (ja) * 1995-02-17 1996-08-30 Hitachi Ltd 集束イオンビーム加工方法および加工装置
JPH08236052A (ja) * 1995-02-24 1996-09-13 Advantest Corp 荷電粒子線装置における荷電粒子源位置調整方法及びその装置
JP3331127B2 (ja) * 1995-08-22 2002-10-07 株式会社東芝 マスク欠陥修正装置および修正方法
US5637879A (en) * 1996-03-20 1997-06-10 Schueler; Bruno W. Focused ion beam column with electrically variable blanking aperture
US5916424A (en) * 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
JPH10134746A (ja) * 1996-10-29 1998-05-22 Seiko Instr Inc 集束イオンビームの光軸調整方法および集束イオンビーム装置
JPH10162769A (ja) * 1996-11-28 1998-06-19 Hitachi Ltd イオンビーム加工装置
JPH10223574A (ja) * 1997-02-12 1998-08-21 Hitachi Ltd 加工観察装置
US5821549A (en) * 1997-03-03 1998-10-13 Schlumberger Technologies, Inc. Through-the-substrate investigation of flip-chip IC's
DE19715226A1 (de) * 1997-04-11 1998-10-15 Univ Schiller Jena Verfahren und Vorrichtung zur hochgenauen Mikropositionierung
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
DE19744126A1 (de) * 1997-10-01 1999-04-15 Thomas Ludwig Dipl Phys Kalka Vorrichtung zur Positionierung im nm-Bereich
JPH11154479A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd ２次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置
US6039000A (en) * 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column
JP2967074B2 (ja) * 1998-03-23 1999-10-25 株式会社日立製作所 荷電粒子線顕微法および荷電粒子線顕微装置
JP2909061B2 (ja) * 1998-05-15 1999-06-23 株式会社日立製作所 断面観察装置
JP2000146876A (ja) 1998-11-11 2000-05-26 Hitachi Ltd 電子デバイス非破壊内部欠陥検出装置
JP3462107B2 (ja) * 1999-02-02 2003-11-05 シャープ株式会社 ２次イオン質量分析装置
JP2000311644A (ja) * 1999-02-25 2000-11-07 Seiko Instruments Inc 走査型顕微鏡
JP3741897B2 (ja) * 1999-04-16 2006-02-01 株式会社ルネサステクノロジ 荷電ビーム処理装置およびその方法、半導体の不良解析方法
JP4221817B2 (ja) * 1999-05-11 2009-02-12 株式会社日立製作所 投射型イオンビーム加工装置
US6414307B1 (en) * 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions
KR20010039728A (ko) * 1999-07-22 2001-05-15 가와하라 하지메 이온 소스
US7094312B2 (en) * 1999-07-22 2006-08-22 Fsi Company Focused particle beam systems and methods using a tilt column
JP2001176440A (ja) * 1999-12-15 2001-06-29 Jeol Ltd イオンビーム装置およびオージェマイクロプローブ
DE10011202A1 (de) * 2000-03-08 2001-09-13 Leica Microsys Lithography Ltd Verfahren zur Ausrichtung eines Elektronenstrahls auf eine Zielposition an einer Substratoberfläche
JP3455501B2 (ja) * 2000-07-13 2003-10-14 住友重機械工業株式会社 ビーム成形スリット
US7084399B2 (en) * 2000-07-18 2006-08-01 Hitachi, Ltd. Ion beam apparatus and sample processing method
JP3597761B2 (ja) * 2000-07-18 2004-12-08 株式会社日立製作所 イオンビーム装置及び試料加工方法
US6515290B1 (en) * 2000-09-05 2003-02-04 Axcelis Technologies, Inc. Bulk gas delivery system for ion implanters
GB2374979A (en) 2000-12-28 2002-10-30 Ims Ionen Mikrofab Syst A field ionisation source
US6581023B1 (en) * 2001-02-07 2003-06-17 Advanced Micro Devices, Inc. Accurate contact critical dimension measurement using variable threshold method
KR100399597B1 (ko) * 2001-03-08 2003-09-26 삼성전자주식회사 오버레이 키 및 그의 제조방법과 이를 이용한 오버레이측정방법
EP1419418A4 (en) * 2001-07-27 2006-11-29 Fei Co ELECTRON BEAM PROCESSING
JP2003075378A (ja) * 2001-09-06 2003-03-12 Nagoya Industrial Science Research Inst 二次イオン分析装置及びイオンビームスパッタ装置
JP4003423B2 (ja) * 2001-09-07 2007-11-07 株式会社日立製作所 荷電粒子線顕微鏡および荷電粒子線顕微方法
TW507264B (en) * 2001-12-26 2002-10-21 Taiwan Semiconductor Mfg Wet bench for removing photoresist and residue
JP2003197138A (ja) * 2001-12-26 2003-07-11 Toshiba Corp 荷電ビーム装置、パターン測定方法および半導体装置の製造方法
US7190823B2 (en) * 2002-03-17 2007-03-13 United Microelectronics Corp. Overlay vernier pattern for measuring multi-layer overlay alignment accuracy and method for measuring the same
JP4122404B2 (ja) * 2002-04-11 2008-07-23 レーザーテック株式会社 試料ステージ及びそれを用いた顕微鏡又は測定器
JP3575472B2 (ja) * 2002-04-23 2004-10-13 日新電機株式会社 イオン源
JP3904483B2 (ja) * 2002-06-19 2007-04-11 株式会社神戸製鋼所 イオン散乱分析装置
US20040121069A1 (en) * 2002-08-08 2004-06-24 Ferranti David C. Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope
JP2004087174A (ja) * 2002-08-23 2004-03-18 Seiko Instruments Inc イオンビーム装置およびイオンビーム加工方法
US6979822B1 (en) * 2002-09-18 2005-12-27 Fei Company Charged particle beam system
AU2003276900A1 (en) * 2002-09-18 2004-04-08 Fei Company Charged particle beam system
JP3984521B2 (ja) * 2002-09-20 2007-10-03 松下電器産業株式会社 透過型電子顕微鏡による観察方法
US6787783B2 (en) * 2002-12-17 2004-09-07 International Business Machines Corporation Apparatus and techniques for scanning electron beam based chip repair
JP2004226079A (ja) * 2003-01-20 2004-08-12 Seiko Instruments Inc 表面あるいは断面加工観察方法及びその装置
US7173253B2 (en) * 2003-01-31 2007-02-06 Canon Kabushiki Kaisha Object-moving method, object-moving apparatus, production process and produced apparatus
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US6926935B2 (en) * 2003-06-27 2005-08-09 Fei Company Proximity deposition
JP4309711B2 (ja) * 2003-07-25 2009-08-05 株式会社日立ハイテクノロジーズ 加工観察装置および加工観察方法
US6897665B2 (en) * 2003-09-06 2005-05-24 Taiwan Semiconductor Manufacturing Co., Ltd In-situ electron beam induced current detection
US7321118B2 (en) * 2005-06-07 2008-01-22 Alis Corporation Scanning transmission ion microscope
US7368727B2 (en) * 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
US7842933B2 (en) * 2003-10-22 2010-11-30 Applied Materials Israel, Ltd. System and method for measuring overlay errors
JP2005150058A (ja) * 2003-11-20 2005-06-09 Canon Inc 液体金属イオン放出用装置、イオンビーム照射装置、該イオンビーム照射装置を備えた加工装置、分析装置、および液体金属イオン放出用装置の製造方法
US7507320B2 (en) * 2004-10-09 2009-03-24 Academia Sinica Single-atom tip and preparation method thereof
US7388218B2 (en) * 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
JP3904021B2 (ja) * 2005-04-05 2007-04-11 株式会社日立製作所 電子線分析方法

Also Published As

Publication number Publication date
EP2418674A3 (en) 2013-06-05
WO2007067316A3 (en) 2007-09-13
WO2007067328A3 (en) 2008-02-28
EP1955348A2 (en) 2008-08-13
JP5266447B2 (ja) 2013-08-21
EP2416342B1 (en) 2016-06-29
EP2416342A3 (en) 2013-06-05
WO2007067315A2 (en) 2007-06-14
TW200735162A (en) 2007-09-16
JP5173828B2 (ja) 2013-04-03
WO2007067317A3 (en) 2007-08-16
JP5766133B2 (ja) 2015-08-19
EP1974365B1 (en) 2019-08-21
EP1955350B1 (en) 2018-07-25
JP5193053B2 (ja) 2013-05-08
WO2007067317A2 (en) 2007-06-14
KR20110003565A (ko) 2011-01-12
EP2416343B1 (en) 2019-01-02
EP1955350A2 (en) 2008-08-13
JP5043855B2 (ja) 2012-10-10
JP2009517839A (ja) 2009-04-30
KR20080078033A (ko) 2008-08-26
KR101139113B1 (ko) 2012-04-30
KR101141863B1 (ko) 2012-05-08
WO2007067296A2 (en) 2007-06-14
TWI518737B (zh) 2016-01-21
EP2418674B1 (en) 2019-03-13
WO2007067311A2 (en) 2007-06-14
KR20080078035A (ko) 2008-08-26
TW200737269A (en) 2007-10-01
KR101196026B1 (ko) 2012-10-30
KR20110008322A (ko) 2011-01-26
KR101226381B1 (ko) 2013-01-24
CN102324365B (zh) 2014-07-16
TWI463525B (zh) 2014-12-01
TWI406318B (zh) 2013-08-21
TWI538004B (zh) 2016-06-11
EP1955354A2 (en) 2008-08-13
WO2007067314A2 (en) 2007-06-14
EP2416344A2 (en) 2012-02-08
JP2009517845A (ja) 2009-04-30
JP2009517838A (ja) 2009-04-30
CN102324365A (zh) 2012-01-18
TW200733166A (en) 2007-09-01
JP5302686B2 (ja) 2013-10-02
WO2007067316A2 (en) 2007-06-14
WO2007067296A8 (en) 2008-05-29
TW201506986A (zh) 2015-02-16
CN102364659A (zh) 2012-02-29
KR101053389B1 (ko) 2011-08-01
KR101254894B1 (ko) 2013-04-15
WO2007067313A2 (en) 2007-06-14
JP2012098294A (ja) 2012-05-24
KR20080080354A (ko) 2008-09-03
TW200735163A (en) 2007-09-16
KR20080078027A (ko) 2008-08-26
TW200739663A (en) 2007-10-16
EP2416343A2 (en) 2012-02-08
TW201503204A (zh) 2015-01-16
JP2009517842A (ja) 2009-04-30
WO2007067314A3 (en) 2008-03-06
KR101053403B1 (ko) 2011-08-01
TW201503223A (zh) 2015-01-16
JP2009517840A (ja) 2009-04-30
EP1955349A2 (en) 2008-08-13
JP2012098293A (ja) 2012-05-24
WO2007067318A2 (en) 2007-06-14
WO2007067311A3 (en) 2008-03-13
EP1955351B1 (en) 2019-08-21
JP2012248540A (ja) 2012-12-13
CN102364659B (zh) 2016-06-01
KR101053299B1 (ko) 2011-08-01
EP2416342A2 (en) 2012-02-08
WO2007067310A2 (en) 2007-06-14
KR101053279B1 (ko) 2011-08-01
EP2416344A3 (en) 2013-06-05
EP2416343A3 (en) 2013-06-05
JP2009517844A (ja) 2009-04-30
WO2007067315A3 (en) 2007-12-06
TWI463514B (zh) 2014-12-01
WO2007067313A3 (en) 2007-09-07
WO2007067328A2 (en) 2007-06-14
JP5656811B2 (ja) 2015-01-21
TW200737268A (en) 2007-10-01
KR20080078034A (ko) 2008-08-26
KR20080078029A (ko) 2008-08-26
JP5643262B2 (ja) 2014-12-17
KR20110003390A (ko) 2011-01-11
EP1955348B1 (en) 2017-07-12
EP1955355A2 (en) 2008-08-13
EP1974365A2 (en) 2008-10-01
TWI538005B (zh) 2016-06-11
JP5155874B2 (ja) 2013-03-06
TWI407475B (zh) 2013-09-01
TWI538009B (zh) 2016-06-11
KR101052997B1 (ko) 2011-07-29
KR20080078026A (ko) 2008-08-26
WO2007067310A3 (en) 2008-03-13
KR101053348B1 (ko) 2011-08-01
JP5193054B2 (ja) 2013-05-08
TW200739645A (en) 2007-10-16
JP2012138360A (ja) 2012-07-19
EP1955356A2 (en) 2008-08-13
TW201503205A (zh) 2015-01-16
TWI463515B (zh) 2014-12-01
JP2009517846A (ja) 2009-04-30
JP2009517841A (ja) 2009-04-30
JP2012142292A (ja) 2012-07-26
KR20110003566A (ko) 2011-01-12
KR101052952B1 (ko) 2011-07-29
EP2416344B1 (en) 2017-03-08
EP2418674A2 (en) 2012-02-15
EP1955353A2 (en) 2008-08-13
TWI399779B (zh) 2013-06-21
EP1955351A2 (en) 2008-08-13
JP2012074383A (ja) 2012-04-12
WO2007067318A3 (en) 2008-07-17
CN101882551B (zh) 2013-10-02
CN101882551A (zh) 2010-11-10
JP5508371B2 (ja) 2014-05-28
JP2009517843A (ja) 2009-04-30
TWI463524B (zh) 2014-12-01
KR20110007254A (ko) 2011-01-21

Similar Documents

Publication Publication Date Title
JP5155874B2 (ja) イオン源、システム及び方法
CN101361157B (zh) 离子源、系统和方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110706

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110712

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20111004

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20111012

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120703

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120926

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121003

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121101

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121127

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20130315

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130402

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130425

R150 Certificate of patent or registration of utility model

Ref document number: 5292545

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees