TW507264B - Wet bench for removing photoresist and residue - Google Patents

Wet bench for removing photoresist and residue Download PDF

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Publication number
TW507264B
TW507264B TW90132416A TW90132416A TW507264B TW 507264 B TW507264 B TW 507264B TW 90132416 A TW90132416 A TW 90132416A TW 90132416 A TW90132416 A TW 90132416A TW 507264 B TW507264 B TW 507264B
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Taiwan
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residue
wet
wafer
workbench
rotating part
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TW90132416A
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Chinese (zh)
Inventor
Kai-Ming Ching
Chai-Fu Lin
Wen-Hsiang Tseng
Ta-Min Lin
Yen-Ming Chen
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Taiwan Semiconductor Mfg
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Publication of TW507264B publication Critical patent/TW507264B/en

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Abstract

This invention provides a wet bench for removing photoresist and residue applicable to at least one wafer, which consists of a clean tank containing chemical solution for cleaning, a rotation mechanism having a rotation member which is installed inside of the clean tank, and a carrier member connected to the rotation member to carry the wafer to soak in the chemical solution for cleaning through the rotation of the rotation member. The use of the above-mentioned wet bench can significantly improve effectiveness of removing photoresist and residue, and thus achieve the goal to complete clean away excessive photoresist residing between bumps and residue materials remaining at the pattern corner.

Description

【發明領域】 特別是有贴疋有關於種濕式工作檯(w e t b e n c h ),卫 濕式工作檯於一種用於去除光阻及殘餘物(residue)之 【發明背景】 習知、 凸塊形成二2 :彡對於晶圓的光阻去除步驟中’特別是4 於光阻的二二非process)中的光阻去除步驟中,这 夾在凸塊與:塊:門(=120//m),加上薄光阻層常常1 生光阻不容易清除:淨二b ί成在去除多餘光阻時常會養 步驟或介層孔蝕刻步::象。此外’在施行完金屬蝕亥 物亦非常不容易蔣r,。f,位於侧壁(sidewa11)的殘食 的處理方法是使用:;2上述現象,目前業界最常採月 圓含浸於去光^化”晶圓移動之濕式工作檯而將aa 光阻及殘餘物。予I ’合液及潔淨用溶劑或溶液中來去時 工作4之社構::=此圖係表不習知技術所使用的濕式 殘餘物用’10為晶圓,12為去除光阻或 洗槽,20為產生動力用^ ί用以裝盛上述化學溶液12之清 生的動力之傳缸,22為用以傳遞汽缸20所產 以承載晶搭2载I與 的y方Θ1舲#曰曰圓1〇表面之相對運動就僅限於圖中所示 的y万向 如此雖可去险Arr 》 无除掉大部份的光阻或殘餘物,但對 507264 五、發明說明(2) 於夾在凸塊與凸塊之間的光阻或殘存在圖案角落的殘餘物 卻經常無法完全清除乾淨,其結果就會如第1 b圖所示。第 1 b圖係表示利用第1 a圖中所示的濕式工作檯對晶圓表面施 行去除光阻步驟後之結果示意圖,圖中,1 〇為晶圓,丨6為 凸塊,1 8為殘餘光阻。另外,習知所使用的濕式工作檯亦 有往上述圖中所示的z方向動作者,然其效果仍跟以上所 述者相同,無法將夾在凸塊與凸塊之間的光阻或殘存在圖 案角落的殘餘物完全清除乾淨。 除此之外,參照第2a圖及第2b圖所示,此兩圖係表示[Field of the invention] In particular, there are related to wet benches, wet benches in a type for removing photoresist and residue [Background of the invention] Known, bump formation 2 2: 彡 for the photoresist removal step of the wafer 'especially in the photoresist removal step of the photoresist process, this is sandwiched between the bump and the: block: gate (= 120 // m) In addition, the thin photoresist layer is often not easy to remove the photoresist: Net two b, often when the excess photoresist is removed, a step or an etching step of the interstitial hole :: elephant. In addition, it is very difficult to finish the metal etching after the implementation. f. The treatment method of the side food (sidewa11) is to use: 2 The above phenomenon, currently the industry most often adopts the full moon to impregnate the wet worktable of the "de-lighting" wafer to move the aa photoresist and Residues. I'll work when the mixture and cleaning solvents or solutions come and go: 4 == This picture shows the wet residues used in the conventional technology. '10 is the wafer and 12 is the removal. Photoresistor or washing tank, 20 is used to generate power ^ ί is used to hold the clean power of the chemical solution 12 above, and 22 is used to transfer the y produced by the cylinder 20 to carry the crystal and 2 Θ1 舲 # Said that the relative motion of the circle 10 surface is limited to the y universal shown in the figure. Although it can remove the risk Arr ", most of the photoresist or residue is not removed, but the 507264 (2) The photoresist sandwiched between the bumps and the bumps or the residue left in the corners of the pattern are often not completely removed, and the result will be shown in Figure 1b. Figure 1b shows the use The schematic diagram of the result after the photoresist removal step is performed on the wafer surface by the wet table shown in Fig. 1a. In the figure, 10 is Circle, 6 is a bump, and 18 is a residual photoresistor. In addition, the wet worktable used in the known practice also has an action in the z direction shown in the above figure, but the effect is still the same as the one described above. It is impossible to completely remove the photoresist sandwiched between the bumps and the bumps or the residue remaining in the corners of the pattern. In addition, referring to Figures 2a and 2b, these two figures show

另外2種習知技術所使用的濕式工作檯之動作示音圖,圖 中箭號係表示晶圓10在化學溶液12中的移動方向“。第2a圖 中所述的濕式工作檯,係以令複數晶圓丨〇繞著一固定軸心 方式於化學溶液12中移動,而第中所述的濕式 ίIΪ則是以令晶圓1 〇本身產生自轉的方式於化學溶液1 2 面述兩種;式工作檯動作的方式,都只能使 表:”塊”艮化學溶液於某一固定相對方向作相對 運動’因此還是無法完全解決上述清 間的光阻或殘存在圖案角落的殘餘物之門&與凸士之 【發明概要】 ~难。The operation sound diagrams of the other two types of conventional wet worktables. The arrows in the figure indicate the moving direction of the wafer 10 in the chemical solution 12. "The wet worktable described in Fig. 2a, The multiple wafers are moved around the chemical solution 12 around a fixed axis, and the wet type I described in the above is on the surface of the chemical solution 1 2 in such a way that the wafer 10 itself rotates. The two types of table-type table movement methods can only make the table: "block" Gen chemical solution relative movement in a fixed relative direction 'so it can not completely solve the photoresistance in the clear room or the pattern corners [Residential Gate] & Toshi's [Summary of Invention] ~ Difficult.

有鑑於此,本發明的主要目的就是提供一錄田仏本广 光阻及殘餘物之濕式工作檯,適用於至曰3用=除 -清洗槽’上述清洗槽内具有 :囫’包括. 一旋轉機構,具有一旋轉部,且上 :洛液, 上述清洗槽内;以及 述疑轉部係設置於In view of this, the main purpose of the present invention is to provide a wet work table for recording Takimoto's wide photoresistors and residues, suitable for use up to 3 times = except-cleaning tank 'the above cleaning tank has: 囫' included. A rotating mechanism has a rotating part, and the upper part is: Luoye, in the cleaning tank; and the suspected rotating part is provided in

五、發明說明^3) — ·~"' --〜 产# —搭載部,樞接於上述旋轉部,係用以搭載上述晶圓 思著上述旋轉部之旋轉而浸泡於上述清洗用化學溶液中。 藉由使用上述之濕式工作檯,就能使晶圓表面(凸塊 跟化學溶液作全方位的相對運動,因而可讓晶圓表面 、凸塊)的每一個角落都經化學溶液流過而被充分地清 洗’故能有效地改善去除光阻及殘餘物的效果,而達到將 爽f凸塊與凸塊之間的多餘光阻或殘存在圖案角落的殘餘 物等習知難以清除乾淨的部份完全清除之目的。 【圖式之簡單說明】 立 第1 a圖係表示習知技術所使用的濕式工作檯之結構示 :圖’第1 b圖則係表示利用第丨a圖中所示的濕式工作檯對 曰曰圓表面施行去除光阻步驟後之結果示意圖。 第2 a圖及第2 b圖係表示習知技術所使用的濕式工作 之動作示意圖。 至 立第3a圖係表示本發明實施例1之濕式工作檯的結構示 思圖;第3b圖則係表示第3a圖中所示的濕式工作檯之 前視圖。 Ό|物 、第4圖係表示凸塊在第3b圖中所示的各個位置受到 學溶液清洗的狀況示意圖。 ^ 第5a圖係表示本發明實施例2之濕式工作檯的結構示 意圖;第5b圖則係表示第5a圖中所示的濕式工 "71" 前視圖。 p值心4份 第6a圖係表示本發明實施例3之濕式工作檯的結構八 意圖;第6b圖則係表示第6a圖中所示的濕式工作檯之部^份V. Description of the invention ^ 3) — · ~ " '-~ PRODUCT # —The mounting part is pivotally connected to the rotating part, and is used to carry the wafer immersed in the cleaning chemistry in consideration of the rotation of the rotating part. In solution. By using the above-mentioned wet worktable, the wafer surface (bumps and chemical solutions can be moved in all directions relative to each other, so each corner of the wafer surface and bumps) can flow through the chemical solution. It is fully cleaned, so it can effectively improve the effect of removing photoresist and residues, and achieve the conventional photoresistance, such as excess photoresistance between bumps and bumps, or residues in pattern corners, which are difficult to remove. Purpose of partial removal. [Simplified description of the drawing] Figure 1a shows the structure of the wet workbench used in the conventional technology: Figure '1b shows the use of the wet workbench shown in Figure 丨 a Schematic diagram of the results after a photoresist removal step is performed on a round surface. Figures 2a and 2b are schematic diagrams showing the operation of wet work used in the conventional technology. Fig. 3a is a schematic view showing the structure of a wet workbench according to Embodiment 1 of the present invention; Fig. 3b is a front view of the wet workbench shown in Fig. 3a. Ό | 物, Figure 4 is a schematic diagram showing the situation where the bumps are cleaned by the learning solution at each position shown in Figure 3b. ^ Fig. 5a is a schematic view showing the structure of a wet workbench according to Embodiment 2 of the present invention; Fig. 5b is a front view of the wet work shown in Fig. 5a " 71 ". 4 copies of p-value center Fig. 6a shows the eighth structure of the wet workbench in Embodiment 3 of the present invention; Fig. 6b shows the parts of the wet workbench shown in Fig. 6a ^

0503-6977tw ; TSMC2001-0835 ; peterliou.ptd 第7頁0503-6977tw; TSMC2001-0835; peterliou.ptd page 7

則視圖 符號說明】 前 第7 a圖係夺-士 意圖;镇®又7^本發明實施例4之渴今 ^、 第7 b圖則係表 “、、式JL作 則現圖。 ’、第7a圖中所示的渴气 I的結構示 作檯之部份^ 為讓本發明之上琉 顯易僅,下文特舉出=他目的、特徵、和 細說明如下: 佳實施例,並配合所附 10〜晶圓; 14〜清洗槽; 1 8殘餘光阻; 22〜傳動構件; 30〜晶圓; 3 2〜化學溶液; 4 2 a〜旋轉部; 4 2 b〜傳動軸; 4 4〜晶圓搭载部·, I明之詳細說明】 1 2〜化學溶液; 1 6〜凸塊; 2 0〜汽缸; 24〜晶0搭栽部· 31〜清洗槽; 34〜凸塊; 42a’〜桿部; 42c〜樞接部; 50〜動力部。 優點能更明 圖式,作詳 【實施例】 的社ia圖’其係表示本發明實施例1戈 ^構不思圖。圖中,30為晶圓;31為清洗 >月洗用之化學溶液32 ;42a為旋轉 並具有 式工作檯 ,用以裝盛 樞接部4 2 cExplanation of View Symbols] Figure 7a before is the intention of robbers and soldiers; Town ® 7 ^ The present example of the fourth embodiment of the present invention, Figure 7b is the table ", and the formula JL is the current picture. ', The structure of thirst I shown in Fig. 7a is shown as a part of the platform ^ In order to make the present invention easy, only the following aims, characteristics, and detailed descriptions are as follows: Cooperate with attached 10 ~ wafer; 14 ~ cleaning tank; 1 8 residual photoresist; 22 ~ transmission member; 30 ~ wafer; 3 2 ~ chemical solution; 4 2 a ~ rotating part; 4 2 b ~ drive shaft; 4 4 ~ Wafer mounting section, detailed description] 1 2 ~ Chemical solution; 16 ~ Bump; 20 ~ Cylinder; 24 ~ Crystal 0 mounting section; 31 ~ Cleaning tank; 34 ~ Bump; 42a ' ~ Rod part; 42c ~ Pivot joint part; 50 ~ Power part. Advantages can be more clearly illustrated, detailed [illustration] of the company's diagram 'It shows the structure of the first embodiment of the present invention. Figure 30 is a wafer; 31 is a chemical solution for cleaning > moon cleaning; 32a is a rotary and has a table for holding the pivot joint 4 2 c

507264 五、發明說明(5) 一"' ’ 4 2b為傳動軸,一端與動力部5〇相連接,另一端則連接 於上述旋轉部42a的中心;44為晶圓搭載部。當傳動軸42b ^到來自於動力部50之動力而旋轉時,就會同時帶動旋轉 部42a旋轉,此時,樞接於旋轉部42a所具有的樞接部“ο 之晶圓搭載部44,即會搭載著晶圓30並隨著上述旋轉部 42a之旋轉而浸泡在化學溶液32内移動。第儿圖係表示第 3a ^中所示之旋轉部42a的前視圖,圖中,34係表示形成 於,,30表面之凸塊,而箭頭則係分別表示旋轉部42a位 於符號A〜Η位置處之旋轉方向。由此第3b圖中可知,晶圓 搭載部44係以如『摩天輪』般的方式樞接於樞接部42c而 順著旋轉部42a之旋轉來移動,因此在移動的過程中,晶 圓30表面之凸塊34的周圍皆可受到上述化學溶 洗,以下基於上述第3b圖中所示的符號A〜H位置V參昭中第4 圖來對化學溶液32於凸塊34周圍之流動情形進行詳細說 明0 —第4圖係表示凸塊在第3b圖中所示的各個位置受到化 學f液清洗的狀況示意圖,圖中,箭號係表示化學溶液“ 之飢動方向。由此第4圖可清楚看出,當上述晶圓搭載部 44所搭載的晶圓30隨著上述旋轉部42&之旋轉而浸泡在化 學洛液3 2内並依序移動至第3b圖中所示的A〜Η位置處時, 形成於晶圓30表面之凸塊34周圍就會因跟化學溶液3 的相對運動而分別受到來自不同方向的化學溶液32的沖 洗,換言之:即為可對凸塊34周圍進行全方位的清洗。 因此,藉由使用上述本發明實施例丨之濕式工作檯,507264 V. Description of the invention (5)-"'4 2b is a transmission shaft, one end of which is connected to the power section 50 and the other end is connected to the center of the above-mentioned rotating section 42a; 44 is a wafer mounting section. When the transmission shaft 42b is rotated by the power from the power section 50, the rotation section 42a will be rotated at the same time. At this time, it is pivotally connected to the wafer mounting section 44 of the pivot section "ο" of the rotation section 42a. That is, the wafer 30 is mounted and moved in the chemical solution 32 as the rotating part 42a rotates. The first figure shows a front view of the rotating part 42a shown in Figure 3a ^, and the figure 34 shows The bumps formed on the surface of 30, and the arrows indicate the rotation directions of the rotating portion 42a at the positions A to Η. From the figure 3b, it can be seen that the wafer mounting portion 44 is like a "ferris wheel" It is pivotally connected to the pivoting portion 42c and moves in accordance with the rotation of the rotating portion 42a in a general manner. Therefore, during the movement, the surroundings of the bumps 34 on the surface of the wafer 30 can be subjected to the above chemical dissolution. The symbols A to H shown in Figure 3b are shown in Figure 4. Refer to Figure 4 for details of the flow of the chemical solution 32 around the bumps 34. Figure 4-Figure 4 shows the bumps shown in Figure 3b. Schematic diagram of the condition of each position being cleaned by chemical f liquid. In the figure, the arrows indicate Shows the chemical solution "movement direction of hunger. From FIG. 4, it can be clearly seen that when the wafer 30 mounted on the wafer mounting portion 44 is immersed in the chemical solution 3 2 with the rotation of the rotating portion 42 & and sequentially moves to FIG. 3 b When the positions A to Η are shown, the surroundings of the bumps 34 formed on the surface of the wafer 30 will be washed by the chemical solution 32 from different directions due to the relative movement with the chemical solution 3, in other words: All around the bumps 34 are cleaned. Therefore, by using the wet workbench described in the embodiment of the present invention,

五、發明說明(6) 一胃b有效地改善去除光阻及殘餘物的效, 凸塊與凸塊之間的多餘《阻或殘存= =達到將夾在 習知難以清除乾淨的部份完全清除之目的角洛的殘餘物等 使用=搖;述:= 舉例如:馬達等,另外亦可 盤部較佳,另外亦可J 部4ja係以使用例如:圓形 實施例2另外亦T使用多邊形盤部等。 & &二二第53圖,其係表示本發明實施例2之渴4工你t 的結構示意圖。名太眷 “、、式工作檯 的樞接部42c改成複數以^ ^除了將旋轉部42a所具有 其餘結構Μ上述實施二=複數的晶圓搭載部44以外, 疋轉邛42a的前視圖。由此第託圖中 ,的囫搭載部44係以如『摩天輪』般的方 :的樞接部42c而順著旋轉部仏之旋:別:= 動的過程中、曰曰_表面之凸塊就會如同因:在移 =的』圍…到化學溶液32的沖洗而達到被全方 因此,藉由使用上述本發明實施例2之濕工 除了能夠達到與實施例1相同之去除光阻及# 至 短整體製程時間之優點。 進步具有縮 實施例3 參照第6a圖,其係表示本發明實施例3 的結構示意圖。在本實施例3中,除了將旋轉部上改作成松桿V. Description of the invention (6) A stomach b can effectively improve the effect of removing photoresist and residues, and the excess between the bumps and the bumps "resistance or residual == to reach the place where it is difficult to remove clean conventionally. The purpose of the removal of the remnants of Jiao Luo = shake; description: = For example: motors, etc., but also the disk part is better, in addition, the J part 4ja can be used, for example: round Example 2 and also T use Polygonal disc section and so on. & & Fig. 53 is a schematic diagram showing the structure of the second embodiment of the present invention. The name of the articulated part 42c of the "type" table is changed to plural. ^^ In addition to the remaining structure of the rotating part 42a, the above-mentioned implementation of the second = plural wafer mounting part 44, the front view of the turn 42a Therefore, in the figure, the cymbal mounting portion 44 follows the rotation portion 42c with a pivoting portion 42c like a "ferris wheel": Do not: = In the process of moving, say _ surface The bumps will be as a whole because of the washing of the chemical solution 32 in the shifted range. Therefore, by using the wet work of the second embodiment of the present invention, the same removal as that of the first embodiment can be achieved. Photoresistance and # the advantages of short overall process time. Progress has a reduced embodiment 3 Refer to Figure 6a, which is a schematic diagram showing the structure of the embodiment 3 of the present invention. In this embodiment 3, in addition to changing the rotating part to loose Pole

第10頁 507264 五、發明說明(7) 部42a’以外,其餘結構皆與上述實施例j相同。第6b圖則 係表示第6a圖中所示之桿部42a,的前視圖。由此第讣圖'中 可知,晶圓搭載部44係以如『摩天輪』般的方式分別樞接 於樞接部42c而順著桿部42a,之旋轉來移動,因此在移動 的過程中,晶圓3 0表面之凸塊就會如同上述實施例j中所 述般,其周圍皆可受到化學溶液32的沖洗而達到被全方位 清洗的效果。 ^ 因此’藉由使用上述本發明實施例3之濕式工作檯, 就能有效地改善去除光阻及殘餘物的效果,而達到將夾在 凸塊與凸塊之間的多餘光阻或殘存在圖案角落的殘餘物等 各知難以清除乾淨的部份完全清除之目的。 實施例4 參照第7a圖,其係表示本發明實施例4之濕式工作檯 的結構不意圖。在本實施例4中,除了將桿部42a,改為複 數並分別於各個桿部42a,設置樞接部42c以樞接複數的晶 圓搭載部44以外,其餘結構皆與上述實施例3相同。第几 圖則係表示第7a圖中所示之複數桿部42a,的前視圖。由此 第7b圖中可知,複數的晶圓搭載部44係以如『摩天輪』般 的方式分別樞接於複數的樞接部42c而順著桿部,之旋 轉來移動’因此在移動的過程中,晶圓3〇表面之凸塊就合 如同上述實施例1中所述般,其周圍皆可受到化學溶液 的沖洗而達到被全方位清洗的效果。 因此,藉由使用上述本發明實施例4之濕式工 除了能夠達到與實施例3柄同之去除光阻及殘餘物的效果Page 10 507264 V. Description of the Invention (7) Except for the part 42a ', the rest of the structure is the same as that of the embodiment j described above. Figure 6b is a front view of the lever portion 42a shown in Figure 6a. From the second figure, it can be seen that the wafer mounting portion 44 is pivotally connected to the pivot portion 42c and moves along the rotation of the lever portion 42a in a manner like a "ferris wheel". Therefore, during the movement process, The bumps on the surface of the wafer 30 will be as described in the above embodiment j, and the surroundings may be washed by the chemical solution 32 to achieve the effect of being cleaned in all directions. ^ Therefore 'By using the above-mentioned wet workbench of Embodiment 3 of the present invention, the effect of removing the photoresist and residue can be effectively improved, and the excess photoresist or residue sandwiched between the bumps and the bumps can be achieved. Residues at the corners of the pattern exist for the purpose of completely removing the hard-to-remove parts. Embodiment 4 Referring to Fig. 7a, the structure of a wet workbench according to Embodiment 4 of the present invention is not intended. In the fourth embodiment, the structure is the same as that of the third embodiment except that the lever portion 42a is changed to a plurality and each pivot portion 42a is provided with a pivoting portion 42c to pivotally connect the plurality of wafer mounting portions 44. . The first plan is a front view of the plurality of lever portions 42a shown in FIG. 7a. From this figure in Fig. 7b, it can be seen that the plurality of wafer mounting portions 44 are each pivotally connected to the plurality of pivotal portions 42c in a manner like a "Ferris wheel" and move along the rods to rotate. Therefore, the moving During the process, the bumps on the surface of the wafer 30 are as described in the above embodiment 1, and the surroundings can be washed by the chemical solution to achieve the effect of being cleaned in all directions. Therefore, by using the wet process of Example 4 of the present invention, the same effect as that of Example 3 can be achieved to remove the photoresist and residue.

第11頁 507264 五、發明說明(8) 外,並能一次同時清洗數量更多的晶圓,而進一步具有縮 短整體製程時間之優點。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍内,當可作各種之更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。Page 11 507264 V. Description of the invention (8) In addition, it can clean a larger number of wafers at the same time, which has the advantage of shortening the overall process time. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application.

0503-6977tw ; TSMC2001-0835 ; peterliou.ptd 第12頁0503-6977tw; TSMC2001-0835; peterliou.ptd page 12

Claims (1)

川/264 /、、申請專利範圍 一種用於去除光 晶圓,包括: 一清洗槽,上述清 、一旋轉機構,具有 上述清洗槽内;以及 ^ —搭載部,樞接於 隨著上述旋轉部之旋轉 2 ·如申請專利範圍 物之濕式工作檯,其中 •如申請專利範圍 I式工作檯,其中 4·如申請專利範圍 物之濕式工作檯,其中 5 ·如申請專利範圍 物之濕式工作檯,其中 如申請專利範圍 濕式工作檯,其中 至少 物之 物之 阻及殘餘物之濕式工作檯,適用於 洗槽内具有清洗用化學溶液; 一旋轉部,且上述旋轉部係設置於 上述旋轉部,係用以搭載上述晶圓 而浸泡於上述清洗用化學溶液中。 第1項所述之用於去除光阻及殘餘 更包括有一動力部。 第2項所述之用於去除光阻及殘餘 上述動力部為馬達。. 第1項所遽之用於/要除光阻及殘餘 上述旋轉部為一圓形盤部。 第1項所述之用於去除光阻及殘餘 上述旋轉部為一多邊形盤部。 第1項所述之用於去除光阻及殘餘 上述旋轉部為一桿部。 0503-6977tw ; TSMC2001-0835 ; peterliou.ptd 第13頁Chuan / 264 / 、 Applicable patent scope A method for removing optical wafers, including: a cleaning tank, the above-mentioned cleaning and a rotating mechanism, with the above cleaning tank; and a mounting part, which is pivotally connected with the rotating part Rotate 2 · As a patent-type wet workbench, of which · As a patent-applicable scope workbench, of which 4. · As a patent-applied wet-table work bench, of which 5 · As a patent-applicable wet-table workbench Type workbench, such as a patented wet workbench, which has at least the resistance of the object and the residue of the wet workbench, which is suitable for the washing tank with a cleaning chemical solution; a rotating part, and the rotating part is The rotating part is provided for mounting the wafer and immersing the wafer in the cleaning chemical solution. The first item for removing photoresist and residue includes a power part. Item 2 is used to remove photoresist and residue. The power unit is a motor. The use and removal of photoresistance and residues mentioned in item 1 The above rotating part is a circular disk part. Item 1 is used to remove photoresist and residue. The rotating part is a polygonal disk part. Item 1 is used to remove photoresist and residue. The rotating part is a rod part. 0503-6977tw; TSMC2001-0835; peterliou.ptd page 13
TW90132416A 2001-12-26 2001-12-26 Wet bench for removing photoresist and residue TW507264B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI406318B (en) * 2005-12-02 2013-08-21 Carl Zeiss Microscopy Llc Method of making a gas field system, method of aligning an ion source with an ion optic system, method of forming an electrically conductive tip of a gas field ion source, ion source system, method of removing chemical species from an ion beam, gas field
CN103633184A (en) * 2012-08-22 2014-03-12 亚智科技股份有限公司 Processing system and method for depositing thin films on substrate of solar cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI406318B (en) * 2005-12-02 2013-08-21 Carl Zeiss Microscopy Llc Method of making a gas field system, method of aligning an ion source with an ion optic system, method of forming an electrically conductive tip of a gas field ion source, ion source system, method of removing chemical species from an ion beam, gas field
CN103633184A (en) * 2012-08-22 2014-03-12 亚智科技股份有限公司 Processing system and method for depositing thin films on substrate of solar cell
CN103633184B (en) * 2012-08-22 2016-08-03 亚智科技股份有限公司 The processing system of the substrate deposition thin film of solaode and method

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