WO2016070939A1

WO2016070939A1 - Apparatus and method for treatment of flexible substrates using an electron beam

Info

Publication number: WO2016070939A1
Application number: PCT/EP2014/074085
Authority: WO
Inventors: Günter Klemm; Volker Hacker; Roland Trassl
Original assignee: Applied Materials, Inc.
Priority date: 2014-11-07
Filing date: 2014-11-07
Publication date: 2016-05-12
Also published as: TWI686836B; TW201621966A; CN107078008A; CN107078008B

Abstract

According to the present disclosure, a charged particle device for treatment of a moveable substrate and a method for treatment of a moving substrate in a processing system are provided. The charged particle device includes a source for forming a beam of charged particles for treatment of the substrate moving along a transport direction and a beam displacement device for moving the beam of charged particles from a first beam trajectory to at least a second beam trajectory along the transport direction.

Description

APPARATUS AND METHOD FOR TREATMENT OF FLEXIBLE SUBSTRATES USING AN ELECTRON BEAM

FIELD

[001] The present disclosure relates to an apparatus and method for the treatment of flexible substrates. In particular, the present disclosure relates to an apparatus and method for the treatment of flexible substrates using an electron beam that results in a more homogenous treatment of the substrate.

BACKGROUND

[002] Electron sources are known from a plurality of fields. For example, electron beams are used for material modification, charging of surfaces, imaging of samples, and the like.

[003] Modern manufacturing processes for processing large area substrates or webs, for instance, for manufacturing of large area foils, thin-film solar cells, and the like have a tendency towards increasing the overall processing speeds in order to decrease the cost of ownership. Further, in order to increase the throughput of a manufacturing apparatus, the energy density provided by a source onto a substrate, foil, sheets or web in certain processes may also be increased.

[004] During manufacturing processes employing electron sources, operational conditions may cause discharges such as arcs, which may disrupt and/or interrupt the voltage supply. Disrupting and/or interrupting the voltage supply of, for instance, the electron source during manufacturing processes may cause an interruption of the electron beam, which may reduce the quality of manufactured substrates. Even if such interruptions only occur for a fraction of a second (e.g. a few milliseconds) the detrimental effect on the substrate may be enough to cause the substrate to be unusable.

[005] Accordingly, there is an ongoing need for an improved apparatus and method for the treatment of flexible substrates using an electron source. SUMMARY

[006] In view of the above, according to an aspect, a charged particle device for treatment of a moveable substrate is provided. The device includes: a source for forming a beam of charged particles for treatment of the substrate moving along a transport direction; and a beam displacement device for moving the beam of charged particles from a first beam trajectory to at least a second beam trajectory along the transport direction.

[007] Further, a method is provided for treatment of a moving substrate in a processing system. The method includes: moving the substrate along a transport direction; treating the substrate with a beam of charged particles; detecting a first error signal; and displacing the beam of charged particles from a first beam trajectory to a second beam trajectory along the transport direction upon detection of the error signal.

[008] Further aspects, advantages and features of the present disclosure are apparent from the dependent claims, the description and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[009] Some of the above mentioned embodiments will be described in more detail in the following description of typical embodiments with reference to the following drawings in which:

[0010] Fig. 1 to Fig. 3 show a schematic view of a charged particle device treating a substrate over time according to embodiments herein;

[0011] Fig. 4 shows schematically the movement of a beam of charged particles with respect to a moving substrate according to embodiments described herein; [0012] Fig. 5 shows schematically the time characteristic of displaced beams of charged particles with respect to one or more electrical discharges and one or more detection signals according to embodiments described herein;

[0013] Fig. 6 shows a schematic view of a charged particle device according to embodiments described herein;

[0014] Fig. 7 shows a schematic view of a further charged particle device according to embodiments described herein;

[0015] Fig. 8 shows a schematic view of yet a further charged particle device according to embodiments;

[0016] Fig. 9 shows a schematic view of yet a further charged particle device according to embodiments;

[0017] Fig. 10 shows a perspective view of the charged particle device of Fig. 6 according to embodiments described herein;

[0018] Fig. 11 shows a schematic view of a system for controlling an electron source according to embodiments described herein;

[0019] Fig. 12 shows a schematic view of a charged particle source according to embodiments described herein;

[0020] Fig. 13 shows a schematic view of a charged particle source according to further embodiments described herein;

[0021] Fig. 14 shows a yet further schematic view of the charged particle source shown in Fig. laccording to embodiments described herein; and

[0022] Fig. 15 shows schematically a method for treatment of a moving substrate according to embodiments described herein. DETAILED DESCRIPTION

[0023] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in each figure. Within the following description of the drawings, the same reference numbers refer to the same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation and is not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet further embodiments. It is intended that the present disclosure includes such modifications and variations.

[0024] Embodiments described herein relate to electron sources, in particular, linear electron sources and methods of operating electron sources, which can be used for a plurality of applications. According to embodiments herein, the beam of charged particles that is produced by an electron source may be displaced in order to improve modern manufacturing methods of substrates including films, sheets, foils, webs and the like. The charged particle devices and methods described herein are not limited to the use of flexible substrates but may equally well be utilized for the treatment of rigid substrates. The term "substrate" as used herein shall refer to both inflexible substrates, e.g., a wafer or a glass plate, and flexible substrates, such as, webs and foils. The terms "charged particle beam", "beam of charged particles" and "beam" are used interchangeably herein.

[0025] According to embodiments herein, a charged particle device is provided for the treatment of substrates, in particular, for the treatment of moveable substrates. The charged particle device may include a charged particle source for forming a beam of charged particles for the treatment of the substrate moving along a transport direction. For example, the charged particle source may form a linear beam of charged particles such as electrons. According to embodiments herein, the charged particle device may be used in polymerization reactions that may, for example, form polymer films on flexible substrates.

[0026] According to embodiments herein, the charged particle device may further be adapted to advantageously displace the beam of charged particles from a first position to at least a second position along at least the transport direction of a substrate that may be moved along a transport direction. Displacing the beam of charged particles may include changing the path of the beam of charged particles from a first path or first beam trajectory to at least a second path or second beam trajectory along at least the transport direction of the moving substrate. Not limited to any one of the embodiments described herein, the charged particle device may additionally be adapted to displace the beam of charged particles in an opposite direction to the transport direction of the substrate.

[0027] According to embodiments described herein, a method for the treatment of substrates, in particular, for the treatment of moving substrates in processing systems is provided. The method improves the quality of treated substrates and the manufacturing efficiency for producing such treated substrates. The method includes treating a substrate moving along a transport direction with a beam of charged particles and displacing the beam of charged particles along the transport direction of the substrate upon receiving an error signal indicative of an error on the substrate and/or of an error in the treatment process.

[0028] In embodiments herein, the error signal may, for example, indicate that arcing has occurred during the treatment of the substrate. Generally, the high voltages employed in charged particle devices for treating substrates may cause occasional arcing, which may cause the beam of charged particles to be interrupted for a few milliseconds. The interruption of the charged particle beam may lead to portions of the substrate not getting treated, in particular, if the substrate is moving along a transport direction. The method according to embodiments herein may displace the beam of charged particles along the transport direction of the moving substrate in order to treat the portion of the substrate that did not get treated due to the interruption of the beam of charged particles caused, for instance, by an electric arc.

[0029] Fig. 1 to Fig. 3 illustrates a charged particle device 100 treating a substrate over time according to embodiments herein. The charged particle device 100 includes a housing 112, which acts as the anode of the electron source. The front portion 113 of the housing 112 has an opening 114, for example a slit-opening. The lateral cross- section of the opening may cover at least 1/10 of the substrate width. According to embodiments herein, the lateral cross-section of the opening may be described as the extension of the opening in a direction of the substrate width. For example, the opening may have a dimension along the direction of the substrate width of at least 1/10 of the substrate width. According to embodiments herein, the width of the beam of charged particles, i.e. a dimension along the substrate transport direction, may be 3 mm to 3 cm in the plane of the substrate. In embodiments herein, the opening 114 measured in a direction perpendicularly to the longitudinal direction of the charged particle device 100 may be, for instance, from 3 mm to 8 mm, e.g. 4 mm or 6 mm. Within the housing 112 a cathode 110 is provided. Electrons that are generated in the housing and which are accelerated towards the front portion 113 of the housing 112 can exit the linear electron source through the opening 114.

[0030] According to different embodiments, the anode can, for example, be manufactured from a material like copper, aluminum, steel, mixtures thereof, and the like. According to different embodiments, which can be combined with other embodiments described herein, the cathode can include a material selected from the group consisting of: steel, stainless steel, copper, aluminium, graphite, CFC (carbon- fiber-reinforced carbon), composites thereof, or mixtures thereof.

[0031] According to embodiments described herein, which can be combined with other embodiments of charged particle devices, the charged particle device can be mounted within a vacuum chamber (not shown in the Figs.). The region exterior of the housing 112 and, in particular, the region between the opening 114 of the electron source and the target for impingement of the electrons can be evacuated to a pressure of, for example, 10^"1 to 10^"9 mbar. The charged particle device 100 may be connected to a gas supply having a gas conduit (not shown in the Fig.). The flow of gas can be regulated such that the pressure within the housing corresponds to a pressure above 10-3 mbar, typically a pressure above 10^" mbar. According to different embodiments described herein, the gas which is inserted in the housing 112 through, for instance, a gas conduit can be a gas at least from the group of noble gases, e.g., argon, N₂, 0₂, and mixtures thereof.

[0032] According to embodiments described herein, which can be combined with other embodiments described herein, the cathode 110 may be connected to a variable power supply via an electrical conduit or conductor, i.e. an electrical connection 120. The electrical conductor may pass through an isolating cathode support member 122. According to yet further embodiments, the isolating cathode support member 122 may also be provided in a gas sealing manner such that the pressure difference from the interior of the housing 112 and the exterior of the housing 112 can be maintained. The housing 112 may be grounded and acts as an anode. The voltage between the cathode 110 and the anode may result in the generation of plasma. Charged particles such as electrons generated in the plasma may be accelerated towards the anode. Electrons being accelerated towards the front portion 113 may exit the charged particle device 100 through the opening 114 as a beam of electrons.

[0033] According to embodiments herein, in addition to one or more isolating cathode support members, the cathode may be connected to the back wall of the housing of the charged particle device by one or more electrically insulating cathode support elements 124, for example, two, three, four or more electrically insulating cathode support elements (e.g. see Fig. 11). According to embodiments herein, the one or more electrically insulating cathode support elements may support the cathode and ensure an equal spacing, in a direction parallel to the length direction of the charged particle device, between the cathode and the back wall of the housing. This ensures that a predetermined dark space is provided between the cathode and the back wall of the housing. In embodiments herein, the one or more electrically insulating cathode support elements may, for instance, be guided via holes through the back wall of the housing. The one or more electrically insulating cathode support elements may be arranged movable (e.g. spring-loaded) in order to allow for a thermal expansion of the cathode, in particular, in order to allow for a linear thermal expansion of the cathode in a direction parallel to the length direction of the charged particle device.

[0034] Further, according to embodiments herein, the charged particle device may be adapted to increase the extraction efficiency of charged particles from the charged particles source that are projected as beam of charged particles towards the substrate. Increasing the extraction efficiency may include minimizing secondary emission and increasing the energy transmission efficiency from the charged particle device to the substrate to be treated. For example, a charged particle device as shown in and described with respect to FIGS. 12 to 14 may also be provided in embodiments described with respect to FIGS. 1 to 11. The increased extraction efficiency may be beneficial for positioning a beam displacement device.

[0035] According to some embodiments, the power supply for providing a voltage to the cathode 110 is adapted for controllably providing a voltage in a range of for example -5 kV to -30 kV, typically in a range of -5 kV to -14 kV. Fig. 1 shows a cross- sectional view of the charged particle device. The cathode 110 may be mounted within the housing 112 and may be spaced away from the housing 112. Typically, the cathode 110 may be spaced away from the housing 112 at a distance that is sufficiently large to substantially reduce or prevent arcing and can for example be in a range of 2 to 12 mm, typically 3 to 8 mm, for example, 4 to 5 mm. According to embodiments described herein, the separation spaces between the cathode and the housing may be chosen to be sufficiently large to prevent arcing and sufficiently small to substantially prevent gas discharge between the cathode and the housing in regions where a gas discharge is not intended, for instance, in regions other than the region in front of the cathode, between the cathode 110 and the opening 114 of the charged particle device 100.

[0036] According to different embodiments described herein, which can be applied to the embodiments of charged particle device described herein, the energy distribution of the emitted linear electron beam may be controlled by the potential of the cathode and the pressure within the housing 112. For instance, for a relatively thick cathode sheath and a relatively thin plasma region a plurality of different energies can be generated depending on the position of the electron generation in the cathode sheath. The thin plasma region may reduce the probability of energy dissipation within the plasma region. However, if the thickness of the plasma region is increased there may be an increasing likelihood that the electrons generated in the cathode sheath interact with electrons and ions in the plasma region. High energy electrons, generated in the cathode sheath that interact with electrons and ions in the plasma region may dissipate their energy to other particles, such that a smaller energy distribution may occur. According to embodiments described herein, by adjusting the operation parameters the energy distribution (FWHM) can typically be below 50%, 30% or 10% of the maximum electron energy. For example, values below 1000 eV such as 100 or 10 eV can be generated. It will be apparent for a person of ordinary skill in the art that the above mentioned values for an energy distribution width will also have a minimum value, which is given by a theoretical minimum, and which might be in a range of 0.1 to 1 eV.

[0037] According to embodiments herein, the shape of the cathode 110 may include a concave portion 111. The concave portion 111 advantageously facilitates to better direct the initial velocity of the charged particles generated in the vicinity of the cathode 110 towards the front portion 113 and, in particular, towards the opening 114 of the charged particle device 100. According to yet further embodiments, the second electrode or cathode may include one or more beam shaping extensions that protrude from the first side of the second electrode in a direction towards the front wall of the housing for guiding the charged particle beam through the slit opening, as for example shown in FIGS 12, 13 and 14.

[0038] The charged particle device 100 illustrated in Fig. 1 through Fig. 3 shows the treatment of a substrate over time according to embodiments herein. The embodiment shown in Fig. 1 includes a charged particle device 100, which forms a beam of charged particles 115 that is directed towards a substrate 117. The substrate moves along a transport direction 101. The beam of charged particles 115 may be directed towards the substrate along a first axis 102. The first axis 102 may correspond to an initial position, an initial axis, a first angle or a first beam trajectory of the beam of charged particles. The first axis 102 may, for instance, be perpendicular to the surface of the substrate 117.

[0039] A short circuit (e.g. due to arcing) may, for instance, interrupt the beam of charged particles 115 during the treatment of the substrate 117 moving along the transport direction 101. The interruption of the beam of charged particles 115 may last up to a few milliseconds and may lead to a region 118 (hereinafter generally referred to as "untreated region") on the substrate 117 that is left untreated.

[0040] In order to ensure an advantageous uniform and continuous treatment of a substrate upon detection of a short circuit, the charged particle device 100 according to embodiments herein may be adapted to change the position or angle of the beam of charged particles 115 at least along the transport direction 101 of the substrate 117. [0041] The geometry of the charged particle devices shown in the figures, particularly the cross-sectional views shown e.g. in FIG. 1 to 3. depicts an example of the charged particle device according to embodiments herein. The specific geometry shown in the figures is not intended to limit the scope of the present disclosure in any way. Further adaptations of the charged particle device with different geometries are within the scope of the present disclosure. For example, a charged particle device as shown in and described with respect to FIGS. 12 to 14 may also be provided in embodiments described herein. The increased extraction efficiency may be beneficial for positioning a beam displacement device.

[0042] In embodiments described herein, the charged particle device 100 may be adapted such that the beam of charged particles 115 may be moved from a first position 106 to a second position 107 along the transport direction 101 of the substrate 117. Equally, one may say that the beam of charged particles is moved from a first beam trajectory to a second beam trajectory along the transport direction of the substrate. This movement is generally indicated by arrow 103 in Fig. 2.

[0043] According to embodiments herein, the first position 106 may be described as the region of impact of the beam of charged particles 115 on the substrate 117 when the beam of charged particles 115 is directed towards the substrate along the first axis 102. The second position 107 may be described as the region of impact of the beam of charged particles 115 on the substrate 117 when the beam of charged particles 115 is directed towards the substrate along the second axis 105 (see Fig. 2).

[0044] In embodiments described herein, upon detection of the short circuit, the beam of charged particles 115 may be displaced, e.g. displaced abruptly (herein also referred to as "jump"), along the transport direction 101 of the substrate 117 to the untreated region 118 on the substrate 117. The velocity with which the beam of charged particles 115 is displaced along the transport direction 101 may generally be greater than the velocity of the substrate 117 moving in the transport direction 101.

[0045] According to embodiments herein, the beam of charged particles 115 may be displaced from the first position 106 along the first axis 102 by an angle alpha (a) to the second position 107 along the second axis 105. In embodiments herein, the second axis may be representative of a second beam trajectory. Angle alpha (a) 116 (hereinafter also referred to as charged particle beam angle) may be defined as the angle between the first axis 102 and the second axis 105 of the beam of charged particles 115. In embodiments herein, the magnitude of angle alpha (a) 116 may vary depending on the velocity of the substrate 117 moving along the transport direction 101. Generally, the maximum value of the angle alpha (a) 116 may be determined by physical limitations of the charged particle device 100 and the transport system of the substrate 117.

[0046] In general, according to embodiments herein, a larger charged particle beam angle (a) displaces the beam of charged particle a greater distance 150 along the transport direction 101 of the substrate 117 than a smaller charged particle beam angle (a) (e.g. see Fig. 2). The distance 150 in the transport direction of the substrate along which the beam of charged particles is displaced may generally be described as the shortest distance between the position of a first point projected onto the surface of the substrate 117 along the first axis 102 of the beam of charged particles 115 and a second point projected onto the surface of the substrate 117 along the second axis 105 of the beam of charged particles 115.

[0047] In embodiments described herein, the beam of charged particles 115 may be moved, through a first charged particle beam angle (a) 116, from its initial first position 106 to the second position 107 along the transport direction 101 of the substrate 117 in order to treat the untreated region 118 of the substrate 117, which is moving in the transport direction 101. According to embodiments herein, the intensity of the beam of charged particles 115 may vary when moving the beam of charged particles 115 from the first position 106 to the second position 107 or may remain constant.

[0048] For example, in embodiments herein, the charged particle device may be adapted such that the intensity of the beam of charged particles 115 may be modulated during the movement of the beam of charged particles 115 from the first position 106 to the second position 107 and/or back to the first position 106. For instance, the intensity of the beam of charged particles 115 may be varied (decreased or increased) in order to compensate for the movement and/or the previous treatment. [0049] According to embodiments herein, the beam of charged particles 115 may stay or pause in the second position 107 for a first predetermined period of time. For example, the beam of charged particle 115 may stay in the second position 107 until the untreated region 118 of the substrate 117 has moved completely past the beam of charged particles 115. The beam of charged particles 115 may stay in the second position 107 for at least 10 s, less than 5 s or less than 1 s. The beam of charged particles 115 may be moved back from the second position 107 to the first position 106 within a second predetermined period of time (see Fig. 3). The total period of time (including the first and second predetermined periods of time) may, for instance, be less than 10 s, less than 5 s or a few milliseconds. According to embodiments herein, total period of time for the beam of charged particles to move from the first position to the second position may be less than the total period of time for the beam of charged particles to move from the second position to the first position.

[0050] In embodiments herein, the first predetermined period of time at which the beam of charged particles 115 stays in the second position 107 may be dependent on the total amount of time of the short circuit, the total amount of time during which the beam of charged particles 115 was interrupted, the movement velocity of the substrate 117 and/or the intensity of the beam of charged particles 115.

[0051] For example, if the untreated region 118 extends over a large area across the substrate 117 along the transport direction 101, the beam of charged particles 115 may remain at the second position 107 for a longer period of time than when the untreated region 118 extends over a small area across the substrate 117 along the transport direction 101.

[0052] In embodiments herein, the charged particle device 100 may be adapted to move the beam of charged particles 115 back from the second position 107 to the first position 106 within the second predetermined period of time. The charged particle device 100 may move the beam of charged particles 115 back to its original position through the first charged particle beam angle (a) 116 along the transport direction 101 of the substrate 117. The movement direction of the beam of charged particles 115 is generally indicated by arrow 104 in Fig. 3. In general, the beam of charged particles 115 may be moved back from the second position 107 to the first position 106 gradually over time. [0053] According to embodiments described herein, the charged particle device 100 may be adapted such that the movement velocity of the beam of charged particles 115 when moved from the first position 106 to the second position 107 may be greater than the movement velocity of the beam of charged particles 115 when moved from the second position 107 back to the first position 106.

[0054] Fig. 4 shows schematically a different view of the movement of a linear beam of charged particles 115 of the charged particle device 100 with respect to a moving substrate 117 according to embodiments described herein. Upon detection of a short circuit, the charged particle device may be adapted to move the beam of charged particles 115 along the transport direction 101 of the substrate 117 to an untreated region 118 on the substrate 117.

[0055] According to further embodiments, the beam of charged particles 115 may, for instance, be moved in the transport direction 101 slightly beyond the untreated region 118 of the substrate 117 in order to fully expose the untreated region 118 to the linear beam of charged particles 115. Arrow 123 (shown in Fig. 4) generally indicates the movement direction in the transport direction 101 of the beam of charged particles 115 towards the untreated region 118. Arrow 125 (shown in Fig. 4) generally indicates the movement direction in an opposite direction to the transport direction 101 of the beam of charged particles 115 returning back to its original position. The beam of charged particles 115 generally moves over and then away from the untreated region 118. The beam of charged particles 115 performs a treatment of the untreated region 118 as the beam moves over the untreated region 118.

[0056] Fig. 5 shows schematically the time characteristic of displaced beams of charged particles with respect to one or more electrical discharges and one or more detection signals according to embodiments described herein.

[0057] According to embodiments herein, for short interruptions of the beam of charged particles, such as, e.g. 1 ms to 4 ms, the beam of charged particles may be displaced a calculated value onto the untreated region. The beam of charged particles may return to its original position after a predetermined amount of time. For small angles of deflection, the magnitude of the deflection signal, such as for instance the current, for the magnetic field may be determined by the equation [1] below.

[0058] J = k - vb - Ubl/2 / a Eq. [1]

[0059] In the above equation [1] k denotes a constant; Ub denotes the acceleration voltage; vb denotes the substrate velocity; and a denotes the distance between the charged particle source and the substrate.

[0060] A first portion of graph 500 indicates the movement of the beam of charged particles over time for a single arc. With respect to the first portion of the graph 500, a first error signal 501 indicative of an arc may be detected by a charged particle device as described herein. The first error signal may be correlated to a first blanking interval 511. A change in the deflection signal 521 supplied to the charged particle device may move the beam of charged particles in order to treat a region on the substrate, which did not get treated due to the arc. Over time 540 the deflection signal supplied to the charged particle device may gradually be returned to normal.

[0061] A second portion of the graph 500 indicates the movement of the beam of charged particles over time for a double arc. A first error signal 501 and second error signal 502 indicative of, for example, a first arc and a second arc respectively may be detected by a charged particle device as described herein. The first signal 501 may be correlated to a first blanking interval 511 and the second signal 502 to a second blanking interval 512 correspondingly. A first change in the magnitude of the deflection signal 521 supplied to the charged particle device may move the beam of charged particles in order to treat a first region on the substrate, which did not get treated due to the first arc. Over time 540 the magnitude of the deflection signal supplied to the charged particle device may gradually be returned to normal. A second change in the magnitude of the deflection signal 522 supplied to the charged particle device, optionally before the magnitude of the first deflection signal supplied to the charged particle device has returned to normal, may move the beam of charged particles in order to treat a second region on the substrate, which did not get treated due to the second arc. Over time 540 the magnitude of the deflection signal supplied to the charged particle device may gradually be returned to normal. [0062] For example, in the embodiments described herein, a first change in the magnitude of the deflection signal 521 supplied to the charged particle device may, for instance, be an increase of the voltage or current supplied to a beam deflection device of the charged particle beam device from a normal value to a first value. Over time 540 the voltage or current supplied to the beam deflection device of the charged particle beam device may gradually be returned from the first value to the normal value (i.e. the voltage or current may be decreased). A second change in the magnitude of the deflection signal 522 supplied to the charged particle device may, for instance, be an increase of the voltage or current supplied to the beam deflection device of the charged particle beam device to a second value, optionally before the first value supplied to the beam deflection device of the charged particle beam device has returned to the normal value.

[0063] According to embodiments herein, the first value of the supplied deflection signal may be the same as the second value of the supplied deflection signal. However, in yet further embodiments herein, the first value and the second value of the supplied deflection signal may be different. Generally, in the embodiments herein, the magnitude of the supplied deflection signal may be dependent on the displacement distance of the beam of charged particles in the transport direction of the substrate in order to reach the untreated region of the substrate.

[0064] In general, according to embodiments herein, one, two, three or more error signals may be detected over time and may initiate a displacement of the beam of charged particles along the transport direction to different untreated regions of the substrate. According to embodiments herein, displacing the beam of charged particles may occur in a consecutive manner. The beam of charged particles may be displaced and subsequently returned to the initial charged particle beam position separately for each detected error signal. According to yet further embodiments herein, the beam of charged particles may be displaced to treat a different untreated region before returning to the initial charged particle beam position. For instance, the absolute value of the first deflection signal for displacing the beam of charged particles upon detection of a first error signal may be larger than the absolute value of the second deflection signal for displacing the beam of charged particles upon detection of a second error signal which may be larger than the absolute value of the third deflection signal for displacing the beam of charged particles upon detection of a third error signal and so forth.

[0065] Figs. 6 to 10 show various embodiments of the charged particle device described herein. Fig. 6 shows a charged particle device 200 that includes all the components of the charged particle device 100 described with respect to Figs. 1-3. According to the embodiment shown in Fig. 6, the charged particle device 200 may include a beam displacement device 210. The beam displacement device may be designed as one or more air-core coils. The embodiment shown in Fig. 6 includes at least one pair of air- core coils 211, 212 arranged to face each other on opposite sides of the beam of charged particles 115. The air-core coils 211, 212 may be connected to a variable voltage source (not shown in the Figs.). The charged particle device may be adapted to vary the current supplied to the air-core coils 211, 212 for generating a magnetic field that may displace the beam of charged particles 115.

[0066] According to the embodiment shown in Fig. 6, the beam of charged particles 115 may be deflected from a first axis 102 along which the beam is projected towards the substrate 117 to a second axis 105. Advantageously, the charged particle beam angle alpha (a) 116 between the first axis 102 and the second axis 105 may be varied depending on the magnitude of current applied to the air-core coils 211, 212.

[0067] For example, increasing the current applied to the air-core coils 211, 212 may increase the strength of the generated magnetic field, which may increase the charged particle beam angle (a) 116. In general, according to embodiments herein, a larger charged particle beam angle (a) deflects the beam of charged particle a greater distance 150 along the transport direction 101 of the substrate 117 than a smaller charged particle beam angle (a). The distance 150 along the transport direction of the substrate along which the beam of charged particles is deflected may generally be described as the shortest distance between the position of a first point projected onto the surface of the substrate 117 along the first axis 102 of the beam of charged particles 115 and a second point projected onto the surface of the substrate 117 along the second axis 105 of the beam of charged particles 115. [0068] Decreasing the current applied to the air-core coils 211, 212 may decrease the strength of the magnetic field, which may decrease the charged particle beam angle (a) 116. According to embodiments herein, the current applied to the air-core coils 211, 212 is typically increased rapidly to warrant an advantageous rapid, jump-like movement of the beam of charged particles 115 along the transport direction 101 of the substrate 117. The current applied to the air-core coils 211, 212 is typically reduced gradually to warrant a slower return of the beam of charged particles 115 to the initial position of the beam of charged particles 115 along the first projection axis 102.

[0069] Fig. 7 shows a charged particle device 201 that includes all the components of the charged particle device 100 described with respect to Figs. 1-3. According to the embodiment shown in Fig. 7, the charged particle device 201 may include a beam displacement device 220. The beam displacement device may be designed as one or more electrodes. The embodiment shown in Fig. 7 includes at least one pair of electrodes 221, 222 arranged to face each other on opposite sides of the beam of charged particles 115. The electrodes 221, 222 may be connected to a variable voltage source (not shown in the Figs.). The charged particle device may be adapted to vary the voltage supplied to the electrodes 221, 222 for generating an electrostatic field that may displace the beam of charged particles 115. The electrostatic field may be beneficial as the electrostatic field can be switched faster as compared to the magnetic field.

[0070] According to the embodiment shown in Fig. 7, the beam of charged particles 115 may be deflected from a first axis 102 along which the beam is projected towards the substrate 117 to a second axis 105. The charged particle beam angle alpha (a) 116 between the first axis 102 and the second axis 105 may be varied depending on the magnitude of voltage applied to the electrodes 221, 222.

[0071] Similar to the embodiment shown in Fig. 6, increasing the voltage applied to the electrodes 221, 222 may increase the strength of the generated electrostatic field, which may increase the charged particle beam angle (a) 116. In general, according to embodiments herein, a larger charged particle beam angle (a) deflects the beam of charged particle a greater distance 150 along the transport direction 101 of the substrate 117 than a smaller charged particle beam angle (a). The distance 150 along the transport direction of the substrate along which the beam of charged particles is deflected may generally be described as the shortest distance between the position of a first point projected onto the surface of the substrate 117 along the first axis 102 of the beam of charged particles 115 and a second point projected onto the surface of the substrate 117 along the second axis 105 of the beam of charged particles 115.

[0072] Decreasing the voltage applied to the electrodes 221, 222 may decrease the strength of the electrostatic field, which may decrease the charged particle beam angle (a) 116. According to embodiments herein, the voltage applied to the electrodes 221, 222 is typically increased rapidly to warrant a rapid jump-like movement of the beam of charged particles 115 along the transport direction 101 of the substrate 117. The voltage applied to the electrodes 221, 222 is typically reduced gradually to warrant a slower return of the beam of charged particles 115 to the initial position of the beam of charged particles 115 along the first projection axis 102.

[0073] Fig. 8 shows a charged particle device 202 that includes all the components of the charged particle device 100 described with respect to Figs. 1-3. According to the embodiment shown in Fig. 8, the charged particle device 202 may include a beam displacement device 230. The beam displacement device may be designed as one or more permanent magnets. The embodiment shown in Fig. 8 includes at least two permanent magnets 231, 232 arranged to face each other on opposite sides of the beam of charged particles 115. The embodiment of Fig. 8 is particularly advantageous because the permanent magnets may function without being connected to a variable voltage supply. This simplifies the charged particle device and reduces the overall cost of ownership.

[0074] According to the embodiment shown in Fig. 8, the beam of charged particles 115 may be deflected from a first axis 102 along which the beam is projected towards the substrate 117 to a second axis 105. Advantageously, the charged particle beam angle alpha (a) 116 between the first axis 102 and the second axis 105 may be varied depending on the magnitude of voltage applied to the cathode 110 of the charged particle device 202.

[0075] For example, decreasing the voltage applied to the cathode 110 may increase the effect of deflection of the magnetic field of the permanent magnets 231, 232 on the beam of charged particles 115, which may increase the charged particle beam angle (a) 116. In general, according to embodiments herein, a larger charged particle beam angle (a) deflects the beam of charged particle a greater distance 150 along the transport direction 101 of the substrate 117 than a smaller charged particle beam angle (a). The distance 150 along the transport direction of the substrate along which the beam of charged particles is deflected may generally be described as the shortest distance between the position of a first point projected onto the surface of the substrate 117 along the first axis 102 of the beam of charged particles 115 and a second point projected onto the surface of the substrate 117 along the second axis 105 of the beam of charged particles 115.

[0076] Increasing the voltage applied to the cathode 110 may decrease the degree of deflection by the magnetic field of the permanent magnets 231, 232, which may decrease the charged particle beam angle (a) 116. According to embodiments herein, the voltage applied to the cathode 110 is typically decreased rapidly to warrant a rapid, jump-like movement of the beam of charged particles 115 along the transport direction 101 of the substrate 117. The voltage applied to the cathode 110 is typically increased gradually to warrant a slower return of the beam of charged particles 115 to the initial position of the beam of charged particles 115 along the first projection axis 102.

[0077] Fig. 9 shows a charged particle device 203 that includes all the components of the charged particle device 100 described with respect to Figs. 1-3. According to the embodiment shown in Fig. 9, the charged particle device 203 may include a beam displacement device 240. The beam displacement device 240 may be designed as a displacement arrangement for rotating and/or displacing the source from a first source position to a second source position (indicated by the dashed lines in Fig. 9). The displacement arrangement may include a mechanical system for displacing the source from at least a first position to a second position in order to change the charged particle beam angle (a) 116.

[0078] According to the embodiment shown in Fig. 9, in the first position of the source, the beam of charged particles 115 may be projected along a first axis 102 towards the substrate 117. In the second position of the source, the beam of charged particles 115 may be projected along a second axis 105 towards the substrate 117. Both the first 102 and second axes 105 may project in straight lines from the cathode 110 of the charged particle device 203 to the substrate 117. According to embodiments herein the first axis 102 and the second axis 105 may be described as a first beam trajectory and a second beam trajectory that differ from each other.

[0079] According to embodiments herein, the beam of charged particles 115 projected along the second axis 105 is downstream along the transport direction 101 of the substrate 117 from the beam of charged particles 115 projected along the first axis 102.

[0080] The embodiment of the charged particle device 203 shown in Fig. 9 may be combined with any of the displacement devices 210, 220, 230 of the embodiments shown in Fig. 6 to Fig. 8 to yield further advantageous embodiments of charged particle devices that may provide a greater range of motion or distance along the transport direction of the substrate for displacing the beam of charged particles 115.

[0081] Fig. 10 shows a perspective view of the charged particle device of Fig. 6 according to embodiments described herein. In general, the following dimensions of the charged particle device 200 may apply to any of the charged particle devices 201, 202, 203 described herein.

[0082] In particular, Fig. 10 shows the extension of the charged particle device 200. According to embodiments herein, the charged particle device 200 may extend in a longitudinal direction 160 such as to cover at least 1/10 of the substrate width. Similarly, the slit opening 114 may also cover at least 1/10 of the substrate width and/or may extend across the longitudinal extension of the charged particle device 200. According to yet further embodiments, at least the beam of charged particles may be dimensioned to cover at least 1/10 of the substrate width.

[0083] In general, the linear beam of charged particles 115 as well as the beam displacement device 210, represented as one or more air-core coils 211, 212 (see also Fig. 6) in the present embodiment may extend in a longitudinal direction 160 of the charged particle device 200 to cover the width of the substrate.

[0084] According to embodiments herein, the longitudinal extension 161 of the linear beam of charged particles 115 may be variable. For example, the longitudinal extension 161 of the beam of charged particles 115 may be adapted to the width of the substrate and/or to the width of the treatment area on the substrate moving along a transport direction.

[0085] Fig. 11 shows a schematic view of a system for controlling an electron source according to embodiments described herein. The system 700 includes a charged particle device 202 having a cathode 110, and an anode provided by the housing 112 having a slit opening 114 provided in the front face of the charged particle device 202. According to embodiments herein, the system 700 for treating a substrate may include any one or more of the charged particle devices 200, 201, 202, 203 described herein (e.g. see Fig. 6 to Fig. 9).

[0086] A high voltage can be provided to the cathode 110 by the electrical connection 120. The housing may be grounded to provide the anode on a ground potential. A gas like noble gases, e.g., argon, N2, 02, mixtures thereof or the like may be provided via a gas conduit 130 from a gas tank 70 through one or more valves 72 into the housing 112 for generating plasma. Generally, according to some embodiments described herein, one or more of the elements of a gas conduit, a valve, a gas tank, and the like can be used in a gas supply for supplying a gas like noble gases, e.g., argon, N2, 02, mixtures thereof or the like into the housing of the charged particle device. According to further embodiments, which can be yielded by combinations with other embodiments, at least two gas supplies or even at least seven gas supplies can be provided. The two or more gas supplies may typically share components like the gas tank, gas conduits from the tank to a gas distributor, and/ or valves.

[0087] The one or more valves 72 may be controlled by controller 90 as indicated by arrow 74. According to some embodiments described herein, which can be combined with other embodiments described herein, the one or more valves 72 can be controlled with a reaction time in a range of 1 to 10 msec. For example, in the case of arcing occurring between the cathode and the anode an advantageously fast reaction can be realized.

[0088] Generally, the current and the electron beam intensity can be controlled by the amount of gas provided in the plasma region. The current provided to the linear electron source may be proportional to the current provided by the emission of electrons. For example, if the current should be reduced, the one or more valves 72 may be controlled such that the amount of gas in the plasma region is increased.

[0089] The high voltage for a cathode 110 may be provided by the power supply 80. According to some embodiments, the controller 90 measures the current provided from the constant voltage source 80 to the cathode. This is indicated by arrow 95 in Fig. 11. Further, as indicated by arrow 82 the voltage supply, that is power supply 80, may include a detection device such as a sensor. According to embodiments herein, the detection device may, for instance, be an arcing control. If arcing occurs between the cathode and the anode the current might show a rapid increase which can be detected by the arcing rejection means of the power supply. According to some embodiments, which can be combined with other embodiments described herein, the voltage supply may be adapted for switching off and on in a millisecond range, for example 1 msec to 10 msec. Generally, the reaction time might depend on the velocity of a substrate being moved along the electron source. Thus, for very fast moving substrates, the reaction time might even be faster or can be lower if the substrate is not moved or only slowly moved. If arcing occurs, the power supply 80 can be immediately switched off and further switched on again immediately after the arcing disappears. On the one hand, this allows for stable operation of the linear electron source. On the other hand, the operation can be quasi-continuous. This is in particular relevant if the linear electron source is used for applications for which a target is a fast moving web, foil and the like.

[0090] As described above, according to embodiments herein, the charged particle device described herein may be adapted for switching the power supply off and on in a millisecond range upon the detection of an arc or short circuit. Surprisingly, it turned out that a short circuit or arc may interrupt the beam of charged particles unwantedly. Generally, the wanted and/or unwanted interruptions of the beam of charged particles may cause a region on the substrate moving along a transport direction to be left out and not get treated.

[0091] Advantageously according to embodiments herein, upon the detection of a short circuit and/or upon interrupting the beam of charged particles, the charged particle device 202 may be adapted to displace the beam of charged particles 115 from a first position to at least a second position along at least the transport direction 101 of the moving substrate 117. Displacing the beam of charged particles 115 may include changing the path of the beam of charged particles from a first path or first beam trajectory to at least a second path or second beam trajectory along at least the transport direction 101 of the moving substrate 117. For example, the beam of charged particles 115 may be deflected from a first axis 102 along which the beam is projected towards the substrate 117 to a second axis 105. Advantageously, the charged particle beam angle alpha (a) 116 between the first axis 102 and the second axis 105 may be varied depending on the magnitude of voltage applied to the cathode 110 of the charged particle device 202.

[0092] In particular, upon detection of the short circuit, the beam of charged particles 115 may be moved abruptly (herein also referred to as "jump") along the transport direction 101 of the substrate 117 to an untreated region on the substrate 117. The velocity with which the beam of charged particles 115 is moved along the transport direction 101 may generally be greater than the velocity of the substrate 117 moving in the transport direction 101.

[0093] According to embodiments herein, the controller 90 may be adapted to, for instance, decrease the voltage applied to the cathode 110 via variable power supply 80 upon the detection of an arc or short circuit. This is indicated by arrow 96 in Fig. 11. Decreasing the acceleration voltage of the charged particle device 202 may increase the effect of deflection of the magnetic field of the permanent magnets 231, 232 on the beam of charged particles 115, which may increase the charged particle beam angle (a) 116. In general, according to embodiments herein, a larger charged particle beam angle (a) deflects the beam of charged particle a greater distance 150 along the transport direction 101 of the substrate 117 than a smaller charged particle beam angle (a). Similar to the description with respect to Fig. 8 above, the distance 150 along the transport direction of the substrate along which the beam of charged particles is deflected may generally be described as the shortest distance between the position of a first point projected onto the surface of the substrate 117 along the first axis 102 of the beam of charged particles 115 and a second point projected onto the surface of the substrate 117 along the second axis 105 of the beam of charged particles 115. [0094] Further, the controller may be adapted to gradually increase the acceleration voltage of the charged particle device 202, which may decrease the effect of deflection of the magnetic field of the permanent magnets 231, 232 that may decrease the charged particle beam angle (a) 116. According to embodiments herein, the voltage applied to the cathode 110 is typically decreased rapidly to warrant a rapid, jump-like movement of the beam of charged particles 115 along the transport direction 101 of the substrate 117. The voltage applied to the cathode 110 is typically increased gradually to warrant a slower return of the beam of charged particles 115 to the initial position of the beam of charged particles 115 along the first projection axis 102.

[0095] According to further embodiments herein, the controller may generally be adapted to correlate the signal indicative of an interruption of the beam of charged particles such as an arc or short circuit with a position on the substrate at which the beam of charged particles was interrupted. The controller may further be adapted to trigger a movement, optionally a temporary movement, of the beam of charged particles to the position on the substrate, which is moving along a transport direction, at which the beam of charged particles was interrupted. According to embodiments herein, the controller may communicate with a variable power supply, which is connected to, for instance, a beam displacement device in order to displace the beam of charged particles along the transport direction.

[0096] According to embodiments herein, a main control unit 92, which may have a display device 91 and an input device 93 like a keyboard, a mouse, a touch screen, or the like, may provide predetermined values for the current and the voltage. The predetermined current, i.e. the electron beam intensity may be provided to the controller 90 as indicated by arrow 94. The controller 90 may, for instance, measure the present current and adjusts the gas flow in the event the present current is not equal to the predetermined current. The main control unit 92 may further give a predetermined value for a voltage to the variable power supply 80 as indicated by arrow 84 in Fig. 11. The voltage provided between the cathode and the anode can be used to influence the energy of the emitted electrons. During normal operation of the system 700, the power supply 80 may set the cathode 110 on a constant potential in a range of -3 to -30, typically -5 to -10 kV, for example -10 kV. Since the anode is grounded, a constant voltage between the cathode and the anode may be applied.

[0097] Fig. 12 shows a schematic view of a charged particle source according to embodiments described herein. Not limited to any particular embodiment described herein, the charged particle source described with respect to Fig. 12, Fig. 13 and Fig. 14 may be utilized in any other embodiment described herein. In particular, Fig. 12 shows a section of a charged particle source 300 for treatment of a substrate in a typical cross- section along a direction, which is perpendicular to a longitudinal axis of the charged particle device. The longitudinal axis of the charged particle device may be defined as the direction into and out of the page. According to some embodiments herein, the charged particle device may be adapted to increase the extraction efficiency of charged particles from the charged particles source that are projected as beam of charged particles towards the substrate. Increasing the extraction efficiency may result in the ability to provide a larger distance between the substrate and the charged particle device. In turn, this can allow for improved positioning of a beam deflection device.

[0098] According to embodiments herein, the charged particle source 300 may include a housing 310. The housing 310 may provide a first electrode. According to embodiments herein, the first electrode may be the anode, which may optionally be grounded. The housing 310 may have a back wall 312 and a front wall 314. The front wall 314 and the back wall 312 of the housing 310 may be connected to each other via a first side wall 311 and a second side wall 313. According to embodiments herein, the first side wall 311 and the second side wall 313 may be arranged parallel to each other.

[0099] In embodiments described herein, the front wall 314 of the housing 310 may include an extraction aperture, which may hereinafter be referred to as slit opening 316. The slit opening 316 may be adapted for trespassing of a beam of charged particles. According to embodiments herein, the slit opening 316 may divide the front wall 314 of the housing 310 into a first front wall portion 315 and a second front wall portion 317. The first front wall portion 315 and the second front wall portion 317 may be symmetric with respect to the line of symmetry 301 defined as a plane dividing the charged particle source 300 into equal halves. For instance, the line of symmetry 301 may be perpendicular to the back wall 312 of the housing 310 of the charged particle source 300. The slit opening 316 may define a length direction of the charged particle source 300. In the exemplary embodiment shown in Fig. 12, the length direction of the charged particle source 300 may be described as being into or out of the page.

[00100] According to embodiments herein, the front wall 314 of the housing 310 including the first front wall portion 315 and/or the second front wall portion 317 may be configured to be arranged towards a second electrode 320. For instance, the first front wall portion 315 and/or the second front wall portion 317 may be inclined towards the second electrode 320. Generally, according to embodiments herein, during operation of the charged particle source 300, plasma may be formed within the housing 310, in the space 302 between the second electrode 320 and the front wall 314 of the housing 310. Further, according to embodiments herein, end walls (not shown in the figures) may cover either end of the housing of the charged particle source 300. Furthermore, according to embodiments described herein, the charged particle source 300 may include at least one connection element selected from the group consisting of: a connection element for electrical power, a connection element for a gas, and a connection element for a cooling fluid.

[00101] According to embodiments herein, the second electrode 320 has at least a first side 322 facing the slit opening 316 of the housing 310 (i.e. the first side of the second electrode may also be referred to as a front side of the second electrode). In embodiments described herein, the first side 322 may be curved. The curvature of the first side 322 may increase the extraction efficiency of the charged particle source 300. For example, the first side 322 may be curved away from the slit opening 316 and be referred to as a concave first side, which may increase the surface area of the second electrode 320 and which may help to focus the beam of charged particles emitted from the second electrode towards the slit opening 316. The second electrode 320 may also have a second side 324 facing the back wall 312 of the housing 310 (i.e. the second side of the second electrode may also be referred to as a rear side of the second electrode).

[00102] According to embodiments herein, the second electrode 320 may have one or more beam shaping extensions 325, 329. The one or more beam shaping extensions 325, 329 may protrude from the second electrode 320 in a direction towards the front wall 314 of the housing 310. Generally, the one or more beam shaping extensions may extend in a direction parallel to the longitudinal direction of the second electrode 320. Not limited to any one particular embodiment described herein, the second electrode may include a single beam shaping extension, two beam shaping extensions or a plurality of beam shaping extensions.

[00103] According to embodiments herein, the one or more beam shaping extensions 325, 329 may be configured to guide a charged particle beam emanating from the second electrode 320 through the slit 316 in order to further increase the extraction efficiency of the charged particle source 300. In particular, the one or more beam shaping extensions may be adapted such that during operation, electric field lines formed between the one or more beam shaping extensions 325, 329 and the housing 310 of the charged particle source 300 guide electrons, which are generated by the interaction of ions from the plasma with the second electrode 320, towards the slit 316. An exemplary trajectory of the beam of charged particles including the Coulomb repulsion of electrons by space charge is illustrated in Fig. 12 (see reference number 305).

[00104] In embodiments described herein, the second electrode 320 of the charged particle source 300 may include a first beam shaping extension 325 and a second beam shaping extension 329. The first beam shaping extension 325 and the second beam shaping extension 329 may be arranged on opposite sides of the second electrode 320. According to embodiments herein, the first beam shaping extension and/or the second beam shaping extension may be integrally formed with the second electrode. In yet further embodiments described herein, the first beam shaping extension and/or the second beam shaping extension may be manufactured separately and connected to the second electrode during assembly of the second electrode.

[00105] According to embodiments herein, the one or more beam shaping extensions 325, 329 may have at least a first side 328, 332, which may be arranged to be adjacent to the first side 322 of the second electrode 320. In embodiments described herein, the first side 328, 332 of the one or more beam shaping extensions 325, 329 may be curved. According to embodiments described herein, the one or more beam shaping extensions 325, 329 may each have a second side 326, 330. The second sides 326, 330 of the one or more beam shaping extensions 325, 329 may be configured to face the side wall 311 and the second side wall 313 of the housing 310 respectively. In embodiments described herein, the second sides 326, 330 of the one or more beam shaping extensions 325, 329 may be arranged to be parallel with respect to at least one of the first side wall 311 and second side wall 313 of the housing 310.

[00106] Further, according to embodiments herein, the one or more beam shaping extensions 325, 129 may have a front side 327, 331 that faces the front wall 314 of the housing 310. For instance, the front side 327 of the first beam shaping extension 325 may face in a direction towards the first front wall portion 315 of the housing 310. The front side 331 of the second beam shaping extension 329 may face in a direction towards the second front wall portion 317 of the housing 310. In embodiments described herein, the edge that may be formed between the one or more front sides 327, 331 and the one or more second sides 326, 330 may support the ignition of plasma during operation of the charged particle source 300. Further, the orientation of the one or more front sides 327, 331 may be parallel to the second side 324 of the second electrode 320.

[00107] Generally, the one or more beam shaping extensions 325, 329 of the second electrode 320 may be arranged to be spaced away from the first side wall 311 and the second side wall 313 of the housing 310 respectively. A dark space may be formed in the space between the one or more second sides 326, 330 of the one or more beam shaping extensions 325, 329 and the first side wall 311 and/or second side wall 313 of the housing 310, respectively. In embodiments herein, the second electrode 320 may also be spaced away from the back wall 312 of the housing 310 such that a dark space is formed in the space between the second side 324 of the second electrode 320 and the back wall 312 of the housing 310.

[00108] According to embodiments herein, the charged particle source 300 may include a cooling system for cooling the housing 310, which may further improve the energy efficiency of the charged particle source 300. For instance, a cooling system 350 that includes at least one passageway to accommodate a cooling fluid may be arranged to cool the back wall 312 of the housing 310. According to embodiments herein, the cooling system may be formed integrally with the housing 310. According to further embodiments herein, the cooling system may, for instance, be formed at least partially within the back wall 312 of the housing 310.

[00109] Fig. 13 shows a section of a charged particle source 400 for treatment of a substrate in a typical cross-section along a direction which is perpendicular to a longitudinal axis of the charged particle device. The longitudinal axis of the charged particle source may be defined as the direction into and out of the page.

[00110] According to embodiments herein, the charged particle source 400 has a similar set-up to the charged particle source 300 shown in Fig. 12. All the features described with respect to Fig. 12, except for the differences described below, also apply to the embodiment shown in Fig. 13 and Fig. 14.

[00111] With respect to Fig. 13, according to embodiments herein, the second electrode 420 may have one or more beam shaping extensions 425, 429. The one or more beam shaping extensions 425, 429 may protrude from the second electrode 420 in a direction towards the front wall 414 of the housing 410. Generally, the one or more beam shaping extensions may extend in a direction parallel to the longitudinal direction of the second electrode 420.

[00112] Similarly to the one or more beam shaping extensions described with respect to Fig. 12, the one or more beam shaping extensions of the embodiment shown in Fig. 13 may be configured to guide a charged particle beam emanating from the second electrode 420 through the slit 416 in order to increase the extraction efficiency of the charged particle source 400. In particular, the one or more beam shaping extensions may be adapted such that during operation, electric field lines formed between the one or more beam shaping extensions 425, 429 and the housing 410 of the charged particle source 400, guide electrons that are generated by the interaction of ions from the plasma with the second electrode 420, towards the slit opening. An exemplary trajectory of the beam of charged particles including the Coulomb repulsion of electrons by space charge is illustrated in Fig. 13 (see reference number 405).

[00113] In embodiments described herein, the second electrode 420 of the charged particle source 400 may include a first beam shaping extension 425 and a second beam shaping extension 429. The first beam shaping extension 425 and the second beam shaping extension 429 may be arranged on opposite ends of the second electrode 420. According to embodiments herein, at least one of the first beam shaping extension 425 and the second beam shaping extension 429 may be integrally formed with the second electrode 420. In yet further embodiments described herein, at least one of the first beam shaping extension 425 and the second beam shaping extension 429 may be manufactured separately and connected to the second electrode 420 during assembly of the second electrode 420.

[00114] According to embodiments herein, the one or more beam shaping extensions 425, 429 may have at least a first side 428, 432, which may be arranged to be adjacent to the first side 422 of the second electrode 420. In embodiments described herein, the first side 428, 432 of the one or more beam shaping extensions 425, 429 may be curved. According to embodiments described herein, the one or more beam shaping extensions 425, 229 may each have a second side 426, 430. The second sides 426, 430 of the one or more beam shaping extensions 425, 429 may be configured to face a first side wall 411 and a second side wall 413 of the housing 410 respectively. In embodiments described herein, the second sides 426, 430 of the one or more beam shaping extensions 425, 429 may be arranged to be parallel with respect to at least one of the first side wall 411 and second side wall 413 of the housing 410.

[00115] In embodiments described herein, the first side 428 of the first beam shaping extension 425 may be inclined, for instance, with respect to at least one of the first side wall 411 and second side wall 413 of the housing 410. For example, the acute angle (α') formed between a straight line extending parallel to the first side 428 of the first beam shaping extension 425 and a straight line extending parallel to the first side wall 411 of the housing 410 may be from 5° to 85°, for instance, 35°, 45° or 55°. Alternatively, the inclination of the first side 428 of the first beam shaping extension 425 may be defined with respect to a longitudinal axis of the beam of charged particles 407. For instance, the acute angle (a") formed between a straight line extending parallel to the first side 428 of the first beam shaping extension 425 and the longitudinal axis of the beam of charged particles 407 may be from 5° to 85°, for instance, 35°, 45° or 55°. According to embodiments herein, similarly the first side 432 of the second beam shaping extension 429 may be inclined, for instance, with respect to at least one of the first side wall 411 and second side wall 413 of the housing 410. For example, the acute angle (α" ') formed between a straight line extending parallel to the first side 432 of the second beam shaping extension 429 and a straight line extending parallel to the second side wall 413 of the housing 410 may be from 5° to 85°, for instance, 35°, 45° or 55°. Alternatively, the inclination of the first side 432 of the first second beam shaping extension 429 may be defined with respect to a longitudinal axis of the beam of charged particles 407. For instance, the acute angle (a" ") formed between a straight line extending parallel to the first side 432 of the second beam shaping extension 429 and the longitudinal axis of the beam of charged particles 407 may be from 5° to 85°, for instance, 35°, 45° or 55°.

[00116] Further, in embodiments herein the first side 428 and the second side 426 of the first beam shaping extension 425 may be adjacent to each other. The first side 428 and the second side 426 may form an edge at the point where the first and secon d side meet. Similarly, the first side 432 and the second side 430 of the second beam shaping extension 429 may be adjacent to each other. The first side 432 and the second side 430 may also form an edge at the point where the first and second side meet. The small radius of curvature of the edge formed between the first side 428 and the second side 426 of the first beam shaping extension 425, and the edge formed between the first side 432 and the second side 430 of the second beam shaping extension 429 may support the ignition of plasma during operation of the charged particle source 400.

[00117] To even better describe the charged particle source according to embodiments described herein, Fig. 14 shows the same section of the charged particle source 300 as illustrated in Fig. 12. In general, Fig. 14 refers to the embodiment shown in Fig. 12. However, the dimensions of the features and their relationship with each other also apply to other embodiments described herein, in particular, for instance, with respect to the embodiment shown in Fig. 13. Further, the geometry of the charged particle sources shown in the figures, particularly the cross-sectional views shown e.g. in Fig. 12 and Fig. 13 depict examples of the charged particle source according to embodiments herein. The specific geometry shown in the figures is not intended to limit the scope of the present disclosure in any way. Further adaptations of the charged particle source with different geometries are within the scope of the present disclosure.

[00118] In general, the charged particle source 300 may have a width 604 greater than 30 mm, for instance, anywhere from 30 to 80 mm, such as, for example, 50 mm. The charged particle source 300 may have a height 601 greater than 70 mm, for instance, anywhere from 70 mm to 130 mm, such as, for example, 100 mm. Further, the second electrode 320 may have a height 602 greater than 30 mm, for instance, anywhere from 30 mm to 50 mm, such as, for example, 40 mm. Furthermore, the height 603 of the slit opening 316 may be greater than 2 mm, for instance, anywhere from 2 mm to 10 mm, such as, for example, 6 mm.

[00119] Fig. 14 further shows a parallel projection 609 of the charged particle source 300 on a projection plane 610. The projection plane may function as a coordinate system in one-dimensional space. The width of the back wall 312 of the housing 310 may, for example, be defined as the length 611 along the projection plane 610. According to embodiments herein, the length 611 may be greater than 3 mm, for instance, anywhere from 3 mm to 30 mm, such as, for instance, 10 mm. Generally, according to embodiments herein, a dark space separates the back wall 312 of the housing 310 from the second electrode 320. The dark space may have a width defined by the length 612 along the projection plane. The length 612 may be greater than 2 mm, for instance, anywhere from 2 mm to 10 mm, such as, for example, 5 mm. The second electrode 320 may have a width defined by the length 613 along the projection plane. The length 613 may be greater than 5 mm, for instance, anywhere from 5 mm to 30 mm, such as, for example, 10 mm. The one or more beam shaping extensions 325, 329 may protrude from the second electrode 320 in a direction towards the front wall, in particular, towards the first front wall portion 315 and/or second front wall portion 317 of the housing 310 by a length 614. The length 614 may be greater than 2 mm, for instance, anywhere from 2 mm to 20 mm, such as, for instance, 5 mm. Not limited to any particular embodiment herein, each of the beam shaping extensions may protrude from the second electrode in a direction towards the front wall of the housing by a different length 614. [00120] Further according to embodiments herein, the shortest distance between the first beam shaping extension 325 and/or the second beam shaping extension 329 with respect to the front wall portion of the housing 310 may be defined by length 615. According to embodiments herein, length 615 may be greater than 10 mm, for instance, anywhere from 10 mm to 60 mm, such as, for instance, 30 mm. In the embodiments described herein, the length 616 along the projection plane 609 between the furthest and closest point of the front wall of the housing 310 with respect to the one or more beam shaping extensions 325, 329 may be greater than 0 mm, for instance, anywhere from 0 mm to 30 mm, such as, for instance, 15 mm.

[00121] In general, the embodiments shown in Fig. 12, Fig. 13 and Fig. 14 may increase the extraction efficiency of the charged particle source and may increase the density of charged particles transmitted from a charged particle source to a substrate to be treated. An increased charged particle density may allow the distance between the charged particle source and the substrate to be treated to be larger. This, for instance, facilitates the arrangement of the beam displacement device. Further, a larger distance between the charged particle source and the substrate may also facilitate the displacement of the beam of charged particles. Accordingly, also embodiments described with respect to FIGS. 1 to 11 can be provided with a charged particle beam device as described herein, in order to benefit from the increased extraction efficiency.

[00122] According to embodiments herein, a larger distance between the charged particle source and the substrate may decrease the energy requirement for displacing the beam of charged particles. In particular, the beam displacement device may deflect the beam of charged particles closer to the source. Deflecting the beam of charged particles closer to the source may facilitate the magnitude of deflection of the beam of charged particles at the substrate level to be relatively high with a relatively small initial deflection by the beam displacement device. This may, for instance, allow for an overall larger degree of displacement of the beam of charged particle at the substrate level with a reduced energy consumption of the beam displacement device.

[00123] Fig. 15 shows schematically a method 1200 for treatment of a moving substrate according to embodiments described herein. The method generally includes moving 1210 the substrate along a transport direction and treating 1220 the substrate with a beam of charged particles. The method further includes detecting 1230 an error signal. Furthermore, the method includes displacing 1240 the beam of charged particles from a first beam trajectory to a second beam trajectory along the transport direction of the substrate upon detection of the error signal. The charged particle beam device and method for treatment of a moving substrate with a beam of charged particles according to embodiments herein, provides the advantage that even during interruptions of the beam of charged particles the resulting substrate includes no untreated region and exhibits, for example, a more homogenous polymer layer.

[00124] According to embodiments described herein, displacing 1240 the beam of charged particles may include displacing the beam of charged particles from a first beam trajectory to a second beam trajectory in a direction along the transport direction of the substrate. The displacement of the beam of charged particles may also be described with respect to changing the charged particle beam angle from a first value to a second value. In general, according to embodiments herein, displacing the beam of charged particles includes changing the trajectory of the beam of charged particles and the charged particle beam angle.

[00125] In the embodiments described herein, displacing the beam of charged particles generally occurs whilst moving the substrate along the transport direction. Further, detecting an error signal may optionally include detecting an error signal indicative of an interruption of the beam of charged particles. For instance, the error signal may be indicative of a short circuit, an electric arc or the like.

[00126] According to embodiments herein, displacing the beam of charged particles at least along the transport direction may further include displacing the beam of charged particles to a first region on the substrate at which the beam of charged particles was interrupted.

[00127] Displacing the beam of charged particles at least along the transport direction may further include at least one element chosen from the following group: applying a magnetic field to the charged particle beam, applying an electrostatic field to the charged particle beam, changing the acceleration voltage of the charged particle beam, displacing or rotating the charged particle source for forming the beam of charged particles from a first source position to a second source position.

[00128] According to embodiments herein, the method 1200 for treatment of a moving substrate may further include returning 1250 the beam of charged particles from the second beam trajectory to the first beam trajectory after a first predetermined period of time. In general, the length of the first predetermined period of time may be dependent on at least one element chosen from the following list: the movement velocity of the substrate, the time duration of the interruption, and the intensity of the beam of charged particles.

[00129] According to yet further embodiments herein, the total period of time for displacing the charged particle beam from the first beam trajectory to the second beam trajectory may be less than the total period of time for returning the charged particle beam from the second beam trajectory to the first beam trajectory.

[00130] In embodiments described herein, the method for treatment of a substrate may further include displacing 1260 the beam of charged particles to a third beam trajectory, which optionally includes displacing the beam of charged particles to a second region on the substrate at which the beam of charged particles was interrupted before returning the beam of charged particles from the second beam trajectory to the first beam trajectory or whilst returning the beam of charged particles from the second beam trajectory to the first beam trajectory.

[00131] In yet further embodiments herein, the method for treatment of a substrate may further include displacing the beam of charged particles to a fourth, fifth and sixth beam trajectory, which optionally includes displacing the beam of charged particles to a third, fourth and fifth region on the substrate at which the beam of charged particles was interrupted. Moving the beam of charged particles to the a third, fourth and fifth region on the substrate may, for instance, occur before returning the beam of charged particles from any previous beam trajectory to the first beam trajectory or whilst returning the beam of charged particles from any previous beam trajectory to the first beam trajectory. In general, displacing the beam of charged particles from a first beam trajectory to an nth beam trajectory includes displacing the beam of charged particles to an n+1 region on the substrate at which the beam of charged particles was interrupted.

[00132] Further according to embodiments herein, displacing the beam of charged particles along the transport direction may be initiated only when the detected error signal exceeds a predetermined threshold.

[00133] In yet further embodiments herein, the method for treatment of a moving substrate may include moving the substrate along a transport direction and treating the substrate with a beam of charged particles. The method may further include detecting an error signal and displacing the beam of charged particles from a first beam trajectory to a second beam trajectory against the transport direction of the substrate upon detection of the error signal. In particular, the embodiments described above with respect to Figs. 6 to 14 apply for both displacing the beam of charged particles in and against the transport direction of the substrate upon detection of an error signal.

[00134] Although specific features of various embodiments of the disclosure may be shown in some drawings and not in others, this is for convenience only. Any feature of a drawing may be referenced and/or claimed in combination with any feature of any other drawing.

[00135] This written description uses examples to disclose the disclosure, including the best mode, and also to enable any person skilled in the art to practice the described subject-matter, including making and using any devices or systems and performing any incorporated methods. While various specific embodiments have been disclosed in the foregoing, those skilled in the art will recognize that the spirit and scope of the claims allows for equally effective modifications. Especially, mutually non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and may include such modifications and other examples that occur to those skilled in the art. Such other examples are intended to be within the scope of the claims if they have structural elements that do not differ from the literal language of the claims, or if they include equivalent structural elements with insubstantial differences from the literal language of the claims.

Claims

1. A charged particle device for treatment of a moveable substrate, the device comprising: a source for forming a beam of charged particles for treatment of the substrate moving along a transport direction; and a beam displacement device for moving the beam of charged particles from a first beam trajectory to at least a second beam trajectory along the transport direction.

2. The charged particle beam device according to claim 1, further including a controller in communication with the beam displacement device and optionally a detection device for detecting an error signal indicative of an interruption of the beam of charged particles, wherein the controller is adapted to trigger the beam displacement device to move the beam of charged particles from the first beam trajectory to the second beam trajectory along the transport direction when the error signal is detected.

3. The charged particle device according to claim 2, wherein the detection device is a sensor configured to detect a short circuit.

4. The charged particle device according to any of claims 2 to 3, wherein the controller is adapted to correlate the error signal indicative of an interruption of the beam of charged particles with a position on the substrate at which the beam of charged particles was interrupted in order to trigger the beam displacement device to move the beam of charged particles, optionally temporarily move the beam of charged particles, from the first beam trajectory to the second beam trajectory along the transport direction such that the beam of charged particles impacts on the substrate at the position at which the beam of charged particles was interrupted.

5. The charged particle device according to any of claims 1 to 4, wherein the beam displacement device includes an arrangement for generating a magnetic field and/or electrostatic field, and optionally wherein the beam displacement device includes at least one element chosen from the following group: one or more air-core coils, one or more permanent magnets, one or more electrodes, and an arrangement for rotating or displacing the source from a first source position to a second source position.

6. The charged particle device according to any of claims 1 to 5, wherein the source further includes a housing providing a first electrode, the housing having a back wall and a front wall; a slit opening in the housing for trespassing of a beam of charged particles, the slit opening defining a length direction of the charged particle device; and a second electrode being arranged within the housing and having a first side facing the slit opening, wherein the second electrode includes one or more beam shaping extensions that protrude from the first side of the second electrode in a direction towards the front wall of the housing for guiding the charged particle beam through the slit opening.

7. A method for treatment of a moving substrate in a processing system, the method comprising: moving the substrate along a transport direction; treating the substrate with a beam of charged particles; detecting a first error signal; and displacing the beam of charged particles from a first beam trajectory to a second beam trajectory along the transport direction upon detection of the error signal.

8. The method according to claim 7, wherein displacing the beam of charged particles from a first beam trajectory to a second beam trajectory occurs whilst moving the substrate along the transport direction and optionally wherein detecting a first error signal includes detecting an error signal indicative of an interruption of the beam of charged particles.

9. The method according to any of claims 7 or 8, wherein detecting a first error signal includes detecting an error indicative of a short circuit.

10. The method according to any of claims 8 or 9, wherein displacing the beam of charged particles to the second beam trajectory includes displacing the beam of charged particles to a first region on the substrate at which the beam of charged particles was interrupted.

11. The method according to any of claims 8 to 10, wherein displacing the beam of charged particles to the second beam trajectory includes at least one element chosen from the following group: applying a magnetic field to the charged particle beam, applying an electrostatic field to the charged particle beam, changing an acceleration voltage of the charged particle beam, displacing or rotating a source for forming the beam of charged particles from a first source position to a second source position.

12. The method according to any of claims 8 to 11, further including returning the beam of charged particles to the first beam trajectory after a first predetermined period of time and optionally wherein a length of the first predetermined period of time is dependent on at least one element chosen from the following list: a movement velocity of the substrate, a time duration of the interruption of the beam of charged particles, and a intensity of the beam of charged particles.

13. The method according to claim 12, wherein a total period of time for displacing the charged particle beam from the first beam trajectory to the second beam trajectory is less than the total period of time for returning the charged particle beam from the second beam trajectory to the first beam trajectory.

14. The method according to any of claims 8 to 13, further including displacing the beam of charged particles to a third beam trajectory upon detecting a second error signal, which optionally includes displacing the beam of charged particles to a second region on the substrate at which the beam of charged particles was interrupted before returning the beam of charged particles from the second beam trajectory to the first beam trajectory or whilst returning the beam of charged particles from the second beam trajectory to the first beam trajectory.

15. A charged particle device for treatment of a moveable substrate, the device comprising: a source for forming a beam of charged particles for treatment of the substrate moving along a transport direction; a beam displacement device for moving the beam of charged particles from a first beam trajectory to at least a second beam trajectory along the transport direction; a controller in communication with the beam displacement device; and a detection device for detecting an error signal indicative of an interruption of the beam of charged particles, wherein the controller is adapted to trigger the beam displacement device to move the beam of charged particles from the first beam trajectory to the second beam trajectory when the error signal is detected.