TW201434047A - 具分頁抹除之非揮發性半導體記憶體 - Google Patents

具分頁抹除之非揮發性半導體記憶體 Download PDF

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Publication number
TW201434047A
TW201434047A TW103119146A TW103119146A TW201434047A TW 201434047 A TW201434047 A TW 201434047A TW 103119146 A TW103119146 A TW 103119146A TW 103119146 A TW103119146 A TW 103119146A TW 201434047 A TW201434047 A TW 201434047A
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TW
Taiwan
Prior art keywords
voltage
word lines
erase
block
unselected
Prior art date
Application number
TW103119146A
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English (en)
Chinese (zh)
Inventor
Jin-Ki Kim
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of TW201434047A publication Critical patent/TW201434047A/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW103119146A 2006-03-29 2007-03-20 具分頁抹除之非揮發性半導體記憶體 TW201434047A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US78689706P 2006-03-29 2006-03-29
US84359306P 2006-09-11 2006-09-11
US11/715,838 US7551492B2 (en) 2006-03-29 2007-03-08 Non-volatile semiconductor memory with page erase

Publications (1)

Publication Number Publication Date
TW201434047A true TW201434047A (zh) 2014-09-01

Family

ID=38540746

Family Applications (2)

Application Number Title Priority Date Filing Date
TW096109567A TWI445006B (zh) 2006-03-29 2007-03-20 具分頁抹除之非揮發性半導體記憶體
TW103119146A TW201434047A (zh) 2006-03-29 2007-03-20 具分頁抹除之非揮發性半導體記憶體

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW096109567A TWI445006B (zh) 2006-03-29 2007-03-20 具分頁抹除之非揮發性半導體記憶體

Country Status (8)

Country Link
US (6) US7551492B2 (enExample)
EP (2) EP2211351A1 (enExample)
JP (4) JP5528798B2 (enExample)
KR (2) KR101453573B1 (enExample)
CN (2) CN101461008B (enExample)
CA (1) CA2644493A1 (enExample)
TW (2) TWI445006B (enExample)
WO (1) WO2007109883A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI729221B (zh) * 2017-02-28 2021-06-01 南韓商愛思開海力士有限公司 記憶體裝置及其操作方法
TWI760063B (zh) * 2020-12-04 2022-04-01 大陸商長江存儲科技有限責任公司 用於立體nand快閃記憶體中的擦除和重設的方法

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