DE60229649D1 - Nichtflüchtige Speicheranordnungsarchitektur, zum Beispiel vom Flash-Typ mit einer seriellen Übertragungsschnittstelle - Google Patents

Nichtflüchtige Speicheranordnungsarchitektur, zum Beispiel vom Flash-Typ mit einer seriellen Übertragungsschnittstelle

Info

Publication number
DE60229649D1
DE60229649D1 DE60229649T DE60229649T DE60229649D1 DE 60229649 D1 DE60229649 D1 DE 60229649D1 DE 60229649 T DE60229649 T DE 60229649T DE 60229649 T DE60229649 T DE 60229649T DE 60229649 D1 DE60229649 D1 DE 60229649D1
Authority
DE
Germany
Prior art keywords
volatile memory
memory array
transmission interface
serial transmission
array architecture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60229649T
Other languages
English (en)
Inventor
Salvatore Polizzi
Maurizio Francesco Perroni
Paolino Schillaci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60229649D1 publication Critical patent/DE60229649D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4204—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus
    • G06F13/4234—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/30—Reduction of number of input/output pins by using a serial interface to transmit or receive addresses or data, i.e. serial access memory
DE60229649T 2002-11-28 2002-11-28 Nichtflüchtige Speicheranordnungsarchitektur, zum Beispiel vom Flash-Typ mit einer seriellen Übertragungsschnittstelle Expired - Lifetime DE60229649D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02425730A EP1424635B1 (de) 2002-11-28 2002-11-28 Nichtflüchtige Speicheranordnungsarchitektur, zum Beispiel vom Flash-Typ mit einer seriellen Übertragungsschnittstelle

Publications (1)

Publication Number Publication Date
DE60229649D1 true DE60229649D1 (de) 2008-12-11

Family

ID=32241384

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60229649T Expired - Lifetime DE60229649D1 (de) 2002-11-28 2002-11-28 Nichtflüchtige Speicheranordnungsarchitektur, zum Beispiel vom Flash-Typ mit einer seriellen Übertragungsschnittstelle

Country Status (3)

Country Link
US (1) US7151705B2 (de)
EP (1) EP1424635B1 (de)
DE (1) DE60229649D1 (de)

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US7558900B2 (en) * 2004-09-27 2009-07-07 Winbound Electronics Corporation Serial flash semiconductor memory
US7652922B2 (en) * 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
US11948629B2 (en) 2005-09-30 2024-04-02 Mosaid Technologies Incorporated Non-volatile memory device with concurrent bank operations
JP5193045B2 (ja) * 2005-09-30 2013-05-08 モサイド・テクノロジーズ・インコーポレーテッド 出力制御部を備えたメモリ
US7747833B2 (en) 2005-09-30 2010-06-29 Mosaid Technologies Incorporated Independent link and bank selection
US20070076502A1 (en) * 2005-09-30 2007-04-05 Pyeon Hong B Daisy chain cascading devices
US8069328B2 (en) * 2006-03-28 2011-11-29 Mosaid Technologies Incorporated Daisy chain cascade configuration recognition technique
US8335868B2 (en) 2006-03-28 2012-12-18 Mosaid Technologies Incorporated Apparatus and method for establishing device identifiers for serially interconnected devices
US8364861B2 (en) * 2006-03-28 2013-01-29 Mosaid Technologies Incorporated Asynchronous ID generation
US7551492B2 (en) * 2006-03-29 2009-06-23 Mosaid Technologies, Inc. Non-volatile semiconductor memory with page erase
US7802064B2 (en) 2006-03-31 2010-09-21 Mosaid Technologies Incorporated Flash memory system control scheme
CN101174253A (zh) * 2006-06-02 2008-05-07 旺宏电子股份有限公司 在多模总线的多引脚传输数据的方法及装置
EP2487794A3 (de) 2006-08-22 2013-02-13 Mosaid Technologies Incorporated Modulare Befehlsstruktur für einen Speicher und Speichersystem
US8700818B2 (en) * 2006-09-29 2014-04-15 Mosaid Technologies Incorporated Packet based ID generation for serially interconnected devices
US7817470B2 (en) * 2006-11-27 2010-10-19 Mosaid Technologies Incorporated Non-volatile memory serial core architecture
US7853727B2 (en) 2006-12-06 2010-12-14 Mosaid Technologies Incorporated Apparatus and method for producing identifiers regardless of mixed device type in a serial interconnection
US8331361B2 (en) 2006-12-06 2012-12-11 Mosaid Technologies Incorporated Apparatus and method for producing device identifiers for serially interconnected devices of mixed type
US8271758B2 (en) 2006-12-06 2012-09-18 Mosaid Technologies Incorporated Apparatus and method for producing IDS for interconnected devices of mixed type
US7818464B2 (en) * 2006-12-06 2010-10-19 Mosaid Technologies Incorporated Apparatus and method for capturing serial input data
US8010709B2 (en) 2006-12-06 2011-08-30 Mosaid Technologies Incorporated Apparatus and method for producing device identifiers for serially interconnected devices of mixed type
US7529149B2 (en) * 2006-12-12 2009-05-05 Mosaid Technologies Incorporated Memory system and method with serial and parallel modes
US8984249B2 (en) * 2006-12-20 2015-03-17 Novachips Canada Inc. ID generation apparatus and method for serially interconnected devices
US7613049B2 (en) * 2007-01-08 2009-11-03 Macronix International Co., Ltd Method and system for a serial peripheral interface
US8010710B2 (en) * 2007-02-13 2011-08-30 Mosaid Technologies Incorporated Apparatus and method for identifying device type of serially interconnected devices
JP5385156B2 (ja) * 2007-02-16 2014-01-08 モサイド・テクノロジーズ・インコーポレーテッド 半導体デバイスおよび複数の相互接続デバイスを有するシステムの電力消費を低減するための方法
US8086785B2 (en) 2007-02-22 2011-12-27 Mosaid Technologies Incorporated System and method of page buffer operation for memory devices
US8046527B2 (en) * 2007-02-22 2011-10-25 Mosaid Technologies Incorporated Apparatus and method for using a page buffer of a memory device as a temporary cache
US7796462B2 (en) 2007-02-22 2010-09-14 Mosaid Technologies Incorporated Data flow control in multiple independent port
US7916557B2 (en) 2007-04-25 2011-03-29 Micron Technology, Inc. NAND interface
EP2179364B1 (de) 2007-08-15 2011-01-12 Nxp B.V. 12c-bus-schnittstelle mit parallelbetriebsmodus
WO2009062280A1 (en) * 2007-11-15 2009-05-22 Mosaid Technologies Incorporated Methods and systems for failure isolation and data recovery in a configuration of series-connected semiconductor devices
US7913128B2 (en) 2007-11-23 2011-03-22 Mosaid Technologies Incorporated Data channel test apparatus and method thereof
US7983099B2 (en) 2007-12-20 2011-07-19 Mosaid Technologies Incorporated Dual function compatible non-volatile memory device
US7940572B2 (en) 2008-01-07 2011-05-10 Mosaid Technologies Incorporated NAND flash memory having multiple cell substrates
US7957173B2 (en) * 2008-10-14 2011-06-07 Mosaid Technologies Incorporated Composite memory having a bridging device for connecting discrete memory devices to a system
US8134852B2 (en) * 2008-10-14 2012-03-13 Mosaid Technologies Incorporated Bridge device architecture for connecting discrete memory devices to a system
US8549209B2 (en) * 2008-11-04 2013-10-01 Mosaid Technologies Incorporated Bridging device having a configurable virtual page size
US20100115172A1 (en) * 2008-11-04 2010-05-06 Mosaid Technologies Incorporated Bridge device having a virtual page buffer
US8386887B2 (en) * 2010-09-24 2013-02-26 Texas Memory Systems, Inc. High-speed memory system
US9697872B2 (en) 2011-12-07 2017-07-04 Cypress Semiconductor Corporation High speed serial peripheral interface memory subsystem
US9053066B2 (en) * 2012-03-30 2015-06-09 Sandisk Technologies Inc. NAND flash memory interface
TWI501240B (zh) * 2012-06-14 2015-09-21 Winbond Electronics Corp 快閃記憶體及操作記憶體裝置的方法
US20150155039A1 (en) * 2013-12-02 2015-06-04 Silicon Storage Technology, Inc. Three-Dimensional Flash NOR Memory System With Configurable Pins
US9385721B1 (en) 2015-01-14 2016-07-05 Sandisk Technologies Llc Bulk driven low swing driver
JP2018014050A (ja) * 2016-07-22 2018-01-25 東芝メモリ株式会社 メモリシステム
US9792994B1 (en) 2016-09-28 2017-10-17 Sandisk Technologies Llc Bulk modulation scheme to reduce I/O pin capacitance
CN111813705A (zh) * 2020-06-28 2020-10-23 上海华虹宏力半导体制造有限公司 串行闪存及其地址控制方法

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US4897818A (en) * 1983-12-30 1990-01-30 Texas Instruments Incorporated Dual-port memory with inhibited random access during transfer cycles
US5808929A (en) * 1995-12-06 1998-09-15 Sheikholeslami; Ali Nonvolatile content addressable memory
US6510487B1 (en) * 1996-01-24 2003-01-21 Cypress Semiconductor Corp. Design architecture for a parallel and serial programming interface
US5966723A (en) * 1997-05-16 1999-10-12 Intel Corporation Serial programming mode for non-volatile memory
US6466505B1 (en) * 2001-05-02 2002-10-15 Cypress Semiconductor Corp. Flexible input structure for an embedded memory
US6650141B2 (en) * 2001-12-14 2003-11-18 Lattice Semiconductor Corporation High speed interface for a programmable interconnect circuit

Also Published As

Publication number Publication date
EP1424635A1 (de) 2004-06-02
US20050213421A1 (en) 2005-09-29
US7151705B2 (en) 2006-12-19
EP1424635B1 (de) 2008-10-29

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