DE60300477D1 - Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren - Google Patents

Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren

Info

Publication number
DE60300477D1
DE60300477D1 DE60300477T DE60300477T DE60300477D1 DE 60300477 D1 DE60300477 D1 DE 60300477D1 DE 60300477 T DE60300477 T DE 60300477T DE 60300477 T DE60300477 T DE 60300477T DE 60300477 D1 DE60300477 D1 DE 60300477D1
Authority
DE
Germany
Prior art keywords
memory device
volatile memory
vertical nanotubes
nanotubes
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60300477T
Other languages
English (en)
Other versions
DE60300477T2 (de
Inventor
Won-Bong Choi
Jo-Won Lee
Ho-Kyu Kang
Chung-Woo Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE60300477D1 publication Critical patent/DE60300477D1/de
Application granted granted Critical
Publication of DE60300477T2 publication Critical patent/DE60300477T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE60300477T 2002-11-15 2003-11-11 Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren Expired - Lifetime DE60300477T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020020071041A KR100790859B1 (ko) 2002-11-15 2002-11-15 수직 나노튜브를 이용한 비휘발성 메모리 소자
KR2002071041 2002-11-15

Publications (2)

Publication Number Publication Date
DE60300477D1 true DE60300477D1 (de) 2005-05-12
DE60300477T2 DE60300477T2 (de) 2006-02-23

Family

ID=32171633

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60300477T Expired - Lifetime DE60300477T2 (de) 2002-11-15 2003-11-11 Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren

Country Status (6)

Country Link
US (1) US6930343B2 (de)
EP (1) EP1420414B1 (de)
JP (2) JP4047797B2 (de)
KR (1) KR100790859B1 (de)
CN (1) CN1317768C (de)
DE (1) DE60300477T2 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10250829B4 (de) * 2002-10-31 2006-11-02 Infineon Technologies Ag Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle
US6982903B2 (en) * 2003-06-09 2006-01-03 Nantero, Inc. Field effect devices having a source controlled via a nanotube switching element
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
KR101015498B1 (ko) * 2003-06-14 2011-02-21 삼성전자주식회사 수직 카본나노튜브 전계효과트랜지스터 및 그 제조방법
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US7374793B2 (en) 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US20050167655A1 (en) 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7211844B2 (en) * 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US7829883B2 (en) 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7109546B2 (en) 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
US9231201B2 (en) * 2004-06-30 2016-01-05 Nxp B.V. Electric device with a layer of conductive material contacted by nanowires
KR100666187B1 (ko) * 2004-08-04 2007-01-09 학교법인 한양학원 나노선을 이용한 수직형 반도체 소자 및 이의 제조 방법
US7233071B2 (en) * 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
DE102004049452A1 (de) * 2004-10-11 2006-04-20 Infineon Technologies Ag Mikroelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines mikroelektronischen Halbleiterbauelements
KR100657910B1 (ko) * 2004-11-10 2006-12-14 삼성전자주식회사 멀티비트 플래시 메모리 소자, 그 동작 방법, 및 그 제조방법
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7535016B2 (en) * 2005-01-31 2009-05-19 International Business Machines Corporation Vertical carbon nanotube transistor integration
KR100688542B1 (ko) * 2005-03-28 2007-03-02 삼성전자주식회사 수직형 나노튜브 반도체소자 및 그 제조방법
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7838943B2 (en) * 2005-07-25 2010-11-23 International Business Machines Corporation Shared gate for conventional planar device and horizontal CNT
US7352607B2 (en) 2005-07-26 2008-04-01 International Business Machines Corporation Non-volatile switching and memory devices using vertical nanotubes
EP1763037A1 (de) 2005-09-08 2007-03-14 STMicroelectronics S.r.l. Auf passivierten Nanopartikeln basierende Kohlenstoffnanoröhrenspeicherzelle mit schwebendem gate und deren Herstellungsverfahren
DE102005046427B4 (de) * 2005-09-28 2010-09-23 Infineon Technologies Ag Leistungstransistor mit parallelgeschalteten Nanodrähten
KR100723412B1 (ko) * 2005-11-10 2007-05-30 삼성전자주식회사 나노튜브를 이용하는 비휘발성 메모리 소자
KR100695167B1 (ko) * 2006-01-04 2007-03-14 삼성전자주식회사 다중벽 탄소나노튜브를 이용한 불휘발성 탄소나노튜브메모리 소자 및 그 동작방법
KR100721020B1 (ko) * 2006-01-20 2007-05-23 삼성전자주식회사 콘택 구조체를 포함하는 반도체 소자 및 그 형성 방법
GB0611557D0 (en) * 2006-06-12 2006-07-19 Univ Belfast Nanostructured systems and a method of manufacture of the same
KR100806129B1 (ko) 2006-08-02 2008-02-22 삼성전자주식회사 탄소 나노 튜브의 형성 방법
KR100749751B1 (ko) 2006-08-02 2007-08-17 삼성전자주식회사 트랜지스터 및 그 제조 방법
KR100745769B1 (ko) * 2006-09-11 2007-08-02 삼성전자주식회사 나노와이어 전기기계 스위칭 소자 및 그 제조방법, 상기나노와이어 전기기계 소자를 이용한 전기기계 메모리 소자
WO2008069485A1 (en) * 2006-12-05 2008-06-12 Electronics And Telecommunications Research Institute The electronic devices using carbon nanotubes having vertical structure and the manufacturing method thereof
KR100820174B1 (ko) 2006-12-05 2008-04-08 한국전자통신연구원 수직구조의 탄소나노튜브를 이용한 전자소자 및 그제조방법
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
GB0801494D0 (en) * 2007-02-23 2008-03-05 Univ Ind & Acad Collaboration Nonvolatile memory electronic device using nanowire used as charge channel and nanoparticles used as charge trap and method for manufacturing the same
US8546863B2 (en) 2007-04-19 2013-10-01 Nxp B.V. Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
KR100866966B1 (ko) 2007-05-10 2008-11-06 삼성전자주식회사 비휘발성 메모리 소자, 그 제조 방법 및 반도체 패키지
WO2008146760A1 (ja) * 2007-05-24 2008-12-04 National Institute Of Advanced Industrial Science And Technology 記憶素子及びその読み出し方法
US20090179253A1 (en) 2007-05-25 2009-07-16 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US8633537B2 (en) 2007-05-25 2014-01-21 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US8940645B2 (en) 2007-05-25 2015-01-27 Cypress Semiconductor Corporation Radical oxidation process for fabricating a nonvolatile charge trap memory device
US9449831B2 (en) 2007-05-25 2016-09-20 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
WO2009072984A1 (en) * 2007-12-07 2009-06-11 Agency For Science, Technology And Research A silicon-germanium nanowire structure and a method of forming the same
JP2011507230A (ja) * 2007-12-07 2011-03-03 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ メモリセルおよびその製造方法
KR101002336B1 (ko) * 2008-02-04 2010-12-20 엘지디스플레이 주식회사 나노 디바이스, 이를 포함하는 트랜지스터, 나노 디바이스및 이를 포함하는 트랜지스터의 제조 방법
AU2009269703A1 (en) * 2008-07-07 2010-01-14 Nanunanu Ltd. Inorganic nanotubes
US8212237B2 (en) 2008-07-09 2012-07-03 Qunano Ab Nanostructured memory device
KR101061150B1 (ko) * 2009-05-22 2011-08-31 서울대학교산학협력단 발광 디바이스와 이의 제조 방법
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US8405189B1 (en) * 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
TWI476948B (zh) * 2011-01-27 2015-03-11 Hon Hai Prec Ind Co Ltd 外延結構及其製備方法
FR2980918B1 (fr) * 2011-10-04 2014-03-07 Univ Granada Point memoire ram a un transistor
CN111180525B (zh) * 2012-03-31 2023-08-08 经度快闪存储解决方案有限责任公司 具有多个氮氧化物层的氧化物氮化物氧化物堆栈
CN102931237B (zh) * 2012-10-10 2015-07-22 哈尔滨工程大学 垂直非对称环栅mosfet器件的结构及其制造方法
US9917169B2 (en) * 2014-07-02 2018-03-13 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and method of formation
US10222346B2 (en) * 2017-01-09 2019-03-05 National Research Council Of Canada Decomposable S-tetrazine based polymers for single walled carbon nanotube applications
CN110176489A (zh) * 2019-05-14 2019-08-27 中国科学院微电子研究所 纳米级晶体管及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3392547B2 (ja) * 1994-11-21 2003-03-31 株式会社東芝 不揮発性半導体記憶装置
JPH102002A (ja) * 1996-06-17 1998-01-06 Daiwa:Kk 排水桝と排水桝の内底形成方法
JPH1093083A (ja) * 1996-09-18 1998-04-10 Toshiba Corp 半導体装置の製造方法
DE60028343T2 (de) * 1999-02-12 2007-05-24 Board Of Trustees Operating Michigan State University, East Lansing Nanokapseln mit geladenen teilchen, deren verwendung und verfahren zu ihrer herstellung
JP2001077219A (ja) * 1999-06-29 2001-03-23 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
KR100343210B1 (ko) * 1999-08-11 2002-07-10 윤종용 단일 전자 충전 ｍｎｏｓ계 메모리 및 그 구동 방법
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
JP4112358B2 (ja) * 2000-07-04 2008-07-02 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 電界効果トランジスタ
US20020130311A1 (en) * 2000-08-22 2002-09-19 Lieber Charles M. Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
KR100393189B1 (ko) * 2001-01-10 2003-07-31 삼성전자주식회사 탄소나노튜브를 이용한 ｍｒａｍ 및 그 제조 방법
EP1341184B1 (de) * 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Speicheranordnung mit kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung
US6515325B1 (en) * 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same

Also Published As

Publication number Publication date
CN1317768C (zh) 2007-05-23
EP1420414B1 (de) 2005-04-06
JP2007329500A (ja) 2007-12-20
KR100790859B1 (ko) 2008-01-03
JP5307993B2 (ja) 2013-10-02
KR20040043043A (ko) 2004-05-22
US20040095837A1 (en) 2004-05-20
EP1420414A1 (de) 2004-05-19
CN1501503A (zh) 2004-06-02
JP4047797B2 (ja) 2008-02-13
JP2004172616A (ja) 2004-06-17
US6930343B2 (en) 2005-08-16
DE60300477T2 (de) 2006-02-23

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