DE60211987D1 - Nichtflüchtiger Halbleiterspeicher mit zirkularem Einschreiben - Google Patents

Nichtflüchtiger Halbleiterspeicher mit zirkularem Einschreiben

Info

Publication number
DE60211987D1
DE60211987D1 DE60211987T DE60211987T DE60211987D1 DE 60211987 D1 DE60211987 D1 DE 60211987D1 DE 60211987 T DE60211987 T DE 60211987T DE 60211987 T DE60211987 T DE 60211987T DE 60211987 D1 DE60211987 D1 DE 60211987D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
circular writing
writing
circular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60211987T
Other languages
English (en)
Other versions
DE60211987T2 (de
Inventor
Hideo Isogai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE60211987D1 publication Critical patent/DE60211987D1/de
Publication of DE60211987T2 publication Critical patent/DE60211987T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
DE2002611987 2001-03-14 2002-03-13 Halbleiterspeichervorrichtung mit nichtflüchtigem Speicher, in den Daten zirkulär geschrieben werden Expired - Fee Related DE60211987T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001073170 2001-03-14
JP2001073170A JP2002278850A (ja) 2001-03-14 2001-03-14 半導体装置

Publications (2)

Publication Number Publication Date
DE60211987D1 true DE60211987D1 (de) 2006-07-20
DE60211987T2 DE60211987T2 (de) 2007-02-01

Family

ID=18930635

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002611987 Expired - Fee Related DE60211987T2 (de) 2001-03-14 2002-03-13 Halbleiterspeichervorrichtung mit nichtflüchtigem Speicher, in den Daten zirkulär geschrieben werden

Country Status (3)

Country Link
EP (1) EP1241677B1 (de)
JP (1) JP2002278850A (de)
DE (1) DE60211987T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2393273A (en) 2002-09-20 2004-03-24 Sharp Kk Method and apparatus for detecting an error in writing to persistent memory
KR100490603B1 (ko) * 2002-12-06 2005-05-27 (주) 라모스테크놀러지 플래시 메모리 동작 제어 방법 및 장치
NO324607B1 (no) * 2003-11-24 2007-11-26 Thin Film Electronics Asa Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering
JP4586469B2 (ja) * 2004-09-15 2010-11-24 ソニー株式会社 メモリ制御装置、メモリ制御方法、プログラム
JP2006085596A (ja) * 2004-09-17 2006-03-30 Mitsubishi Electric Corp 情報記録読出装置
JP2006107363A (ja) * 2004-10-08 2006-04-20 Toshiba Corp 携帯可能電子装置と携帯可能電子装置に用いられるメモリアクセス方法
JP4529765B2 (ja) * 2005-03-31 2010-08-25 コニカミノルタビジネステクノロジーズ株式会社 画像形成装置
JP2008191855A (ja) * 2007-02-02 2008-08-21 Sony Corp 半導体記憶装置及びメモリ制御方法
KR20100013485A (ko) * 2008-07-31 2010-02-10 삼성전자주식회사 메모리 장치 및 웨어 레벨링 방법
JP2011198409A (ja) * 2010-03-19 2011-10-06 Toshiba Information Systems (Japan) Corp 不揮発性メモリ
FR2959586B1 (fr) 2010-04-30 2012-06-22 Proton World Int Nv Procede d'ecriture et de lecture dans une memoire d'atomicite

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618798A (ja) * 1984-06-21 1986-01-16 Nec Corp 不揮発性記憶装置
JPH0421999A (ja) * 1990-05-15 1992-01-24 Mitsubishi Electric Corp 分割型メモリ書き込み方式
FR2665791B1 (fr) * 1990-08-13 1994-11-10 Didier Mazingue Procede de mise a jour d'une memoire eeprom.
FR2712412B1 (fr) * 1993-11-12 1996-02-09 Peugeot Dispositif de sauvegarde de données dans un ensemble à microprocesseur notamment de véhicule automobile.
FR2730833B1 (fr) * 1995-02-16 1997-03-28 Gemplus Card Int Procede de mise a jour securisee de memoire eeprom

Also Published As

Publication number Publication date
DE60211987T2 (de) 2007-02-01
EP1241677A1 (de) 2002-09-18
JP2002278850A (ja) 2002-09-27
EP1241677B1 (de) 2006-06-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee