DE602004017805D1 - 1R1D R-RAM-Array mit potenzialfreier P-Wanne - Google Patents

1R1D R-RAM-Array mit potenzialfreier P-Wanne

Info

Publication number
DE602004017805D1
DE602004017805D1 DE602004017805T DE602004017805T DE602004017805D1 DE 602004017805 D1 DE602004017805 D1 DE 602004017805D1 DE 602004017805 T DE602004017805 T DE 602004017805T DE 602004017805 T DE602004017805 T DE 602004017805T DE 602004017805 D1 DE602004017805 D1 DE 602004017805D1
Authority
DE
Germany
Prior art keywords
floating
well
ram array
ram
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004017805T
Other languages
English (en)
Inventor
Sheng Teng Hsu
Wei Pan
Weiwei Zhuang
Fengyan Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE602004017805D1 publication Critical patent/DE602004017805D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
DE602004017805T 2003-02-27 2004-02-19 1R1D R-RAM-Array mit potenzialfreier P-Wanne Expired - Lifetime DE602004017805D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/376,796 US6849564B2 (en) 2003-02-27 2003-02-27 1R1D R-RAM array with floating p-well

Publications (1)

Publication Number Publication Date
DE602004017805D1 true DE602004017805D1 (de) 2009-01-02

Family

ID=32908004

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004017805T Expired - Lifetime DE602004017805D1 (de) 2003-02-27 2004-02-19 1R1D R-RAM-Array mit potenzialfreier P-Wanne

Country Status (6)

Country Link
US (1) US6849564B2 (de)
EP (1) EP1469519B1 (de)
JP (1) JP4718119B2 (de)
KR (1) KR100602507B1 (de)
DE (1) DE602004017805D1 (de)
TW (1) TWI249815B (de)

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US6962648B2 (en) * 2003-09-15 2005-11-08 Global Silicon Net Corp. Back-biased face target sputtering
US20060081466A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima High uniformity 1-D multiple magnet magnetron source
US7425504B2 (en) * 2004-10-15 2008-09-16 4D-S Pty Ltd. Systems and methods for plasma etching
KR100593750B1 (ko) * 2004-11-10 2006-06-28 삼성전자주식회사 이성분계 금속 산화막을 데이터 저장 물질막으로 채택하는교차점 비휘발성 기억소자 및 그 제조방법
KR100657911B1 (ko) * 2004-11-10 2006-12-14 삼성전자주식회사 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US7323349B2 (en) * 2005-05-02 2008-01-29 Sharp Laboratories Of America, Inc. Self-aligned cross point resistor memory array
KR100630437B1 (ko) 2005-08-31 2006-10-02 삼성전자주식회사 비휘발성 유기물 저항 메모리 장치 및 그 제조 방법
US20070084717A1 (en) * 2005-10-16 2007-04-19 Makoto Nagashima Back-biased face target sputtering based high density non-volatile caching data storage
US20070084716A1 (en) * 2005-10-16 2007-04-19 Makoto Nagashima Back-biased face target sputtering based high density non-volatile data storage
US20070132049A1 (en) * 2005-12-12 2007-06-14 Stipe Barry C Unipolar resistance random access memory (RRAM) device and vertically stacked architecture
US20070205096A1 (en) * 2006-03-06 2007-09-06 Makoto Nagashima Magnetron based wafer processing
US8395199B2 (en) 2006-03-25 2013-03-12 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US7932548B2 (en) 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US20080011603A1 (en) * 2006-07-14 2008-01-17 Makoto Nagashima Ultra high vacuum deposition of PCMO material
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
JP4251576B2 (ja) * 2006-07-28 2009-04-08 シャープ株式会社 不揮発性半導体記憶装置
US8308915B2 (en) 2006-09-14 2012-11-13 4D-S Pty Ltd. Systems and methods for magnetron deposition
KR100780964B1 (ko) * 2006-11-13 2007-12-03 삼성전자주식회사 셀 다이오드를 구비하는 상변화 메모리 소자 및 그의제조방법
CN101501852B (zh) * 2006-11-20 2012-08-29 松下电器产业株式会社 非易失性存储元件阵列
KR20090080751A (ko) * 2008-01-22 2009-07-27 삼성전자주식회사 저항성 메모리 소자 및 그 제조방법
KR20100130419A (ko) * 2009-06-03 2010-12-13 삼성전자주식회사 이종접합 다이오드와 그 제조방법 및 이종접합 다이오드를 포함하는 전자소자
KR101043384B1 (ko) * 2009-06-24 2011-06-21 주식회사 하이닉스반도체 고온 초전도체를 이용한 자기저항 램
KR101661306B1 (ko) * 2010-02-23 2016-09-30 삼성전자 주식회사 반도체 소자 및 그 제조방법
TWI572074B (zh) * 2015-02-04 2017-02-21 力晶科技股份有限公司 電阻式隨機存取記憶體及其製造方法

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US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5818749A (en) * 1993-08-20 1998-10-06 Micron Technology, Inc. Integrated circuit memory device
US5629889A (en) * 1995-12-14 1997-05-13 Nec Research Institute, Inc. Superconducting fault-tolerant programmable memory cell incorporating Josephson junctions
JP2000206220A (ja) * 1999-01-11 2000-07-28 Mitsubishi Electric Corp 磁界検出素子
US6437640B1 (en) * 2000-09-12 2002-08-20 The Aerospace Corporation Addressable diode isolated thin film array
US6992365B2 (en) * 2001-10-12 2006-01-31 Ovonyx, Inc. Reducing leakage currents in memories with phase-change material
JP2003249626A (ja) * 2001-12-18 2003-09-05 Mitsubishi Electric Corp 半導体記憶装置
JP2005536052A (ja) * 2002-08-14 2005-11-24 オヴォニクス，インコーポレイテッド プログラム可能デバイスのためのコンタクト改善方法及び装置

Also Published As

Publication number Publication date
EP1469519A3 (de) 2006-03-22
US20040171215A1 (en) 2004-09-02
EP1469519B1 (de) 2008-11-19
TWI249815B (en) 2006-02-21
KR20040077492A (ko) 2004-09-04
US6849564B2 (en) 2005-02-01
TW200427000A (en) 2004-12-01
JP2004260162A (ja) 2004-09-16
JP4718119B2 (ja) 2011-07-06
EP1469519A2 (de) 2004-10-20
KR100602507B1 (ko) 2006-07-19

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