SG149680A1 - Film formation apparatus and film formation method and cleaning method - Google Patents

Film formation apparatus and film formation method and cleaning method

Info

Publication number
SG149680A1
SG149680A1 SG200500710-9A SG2005007109A SG149680A1 SG 149680 A1 SG149680 A1 SG 149680A1 SG 2005007109 A SG2005007109 A SG 2005007109A SG 149680 A1 SG149680 A1 SG 149680A1
Authority
SG
Singapore
Prior art keywords
film formation
cleaning method
cleaning
heating
torr
Prior art date
Application number
SG200500710-9A
Other languages
English (en)
Inventor
Shunpei Yamazaki
Masakazu Murakami
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG149680A1 publication Critical patent/SG149680A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
SG200500710-9A 2001-12-12 2002-12-04 Film formation apparatus and film formation method and cleaning method SG149680A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001379273 2001-12-12
JP2002046967 2002-02-22

Publications (1)

Publication Number Publication Date
SG149680A1 true SG149680A1 (en) 2009-02-27

Family

ID=26625028

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200207346A SG114589A1 (en) 2001-12-12 2002-12-04 Film formation apparatus and film formation method and cleaning method
SG200500710-9A SG149680A1 (en) 2001-12-12 2002-12-04 Film formation apparatus and film formation method and cleaning method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG200207346A SG114589A1 (en) 2001-12-12 2002-12-04 Film formation apparatus and film formation method and cleaning method

Country Status (7)

Country Link
US (3) US6776847B2 (ja)
EP (1) EP1319732B1 (ja)
JP (2) JP5111287B2 (ja)
KR (1) KR100955595B1 (ja)
CN (2) CN1319116C (ja)
SG (2) SG114589A1 (ja)
TW (1) TWI286348B (ja)

Families Citing this family (167)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7517551B2 (en) * 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
US6770562B2 (en) * 2000-10-26 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
TWI262034B (en) * 2002-02-05 2006-09-11 Semiconductor Energy Lab Manufacturing system, manufacturing method, method of operating a manufacturing apparatus, and light emitting device
TWI286044B (en) 2002-02-22 2007-08-21 Semiconductor Energy Lab Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus
SG113448A1 (en) * 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
US7309269B2 (en) * 2002-04-15 2007-12-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
US6642092B1 (en) * 2002-07-11 2003-11-04 Sharp Laboratories Of America, Inc. Thin-film transistors formed on a metal foil substrate
JP3690380B2 (ja) * 2002-08-02 2005-08-31 セイコーエプソン株式会社 材料の配置方法、電子装置の製造方法、電気光学装置の製造方法
US20040123804A1 (en) * 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
JP5072184B2 (ja) 2002-12-12 2012-11-14 株式会社半導体エネルギー研究所 成膜方法
WO2004101844A1 (en) * 2002-12-18 2004-11-25 Cardinal Cg Company Plasma-enhanced film deposition
US7211461B2 (en) * 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
WO2004090928A1 (ja) * 2003-04-04 2004-10-21 Matsushita Electric Industrial Co. Ltd. プラズマディスプレイパネルの製造方法
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US7211454B2 (en) * 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
KR100699994B1 (ko) 2004-08-30 2007-03-26 삼성에스디아이 주식회사 라미네이션 장비 및 레이저 열전사 방법
US7315047B2 (en) 2004-01-26 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR100830388B1 (ko) * 2004-03-29 2008-05-20 도쿄엘렉트론가부시키가이샤 막 형성 장치 및 막 형성 방법
JP2006066884A (ja) * 2004-07-27 2006-03-09 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体
WO2006016669A1 (en) * 2004-08-13 2006-02-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100699993B1 (ko) * 2004-08-30 2007-03-26 삼성에스디아이 주식회사 레이저 열전사 방법
US20060081184A1 (en) * 2004-10-19 2006-04-20 Yeh Te L Evaporation mask with high precision deposition pattern
KR100626037B1 (ko) * 2004-11-18 2006-09-20 삼성에스디아이 주식회사 마스크 세정방법
US7431807B2 (en) * 2005-01-07 2008-10-07 Universal Display Corporation Evaporation method using infrared guiding heater
JP4554378B2 (ja) * 2005-01-21 2010-09-29 富士通セミコンダクター株式会社 窒化膜の形成方法、半導体装置の製造方法及びキャパシタの製造方法
US7918940B2 (en) * 2005-02-07 2011-04-05 Semes Co., Ltd. Apparatus for processing substrate
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2006330684A (ja) * 2005-04-26 2006-12-07 Kyocera Corp マスク洗浄装置、マスク洗浄方法、蒸着膜の形成方法、ｅｌディスプレイの製造装置、及びｅｌディスプレイの製造方法
JP4758159B2 (ja) * 2005-07-19 2011-08-24 株式会社日立ハイテクノロジーズ プラズマエッチング装置および微粒子除去方法
JP5014603B2 (ja) * 2005-07-29 2012-08-29 株式会社アルバック 真空処理装置
US7615501B2 (en) * 2005-08-11 2009-11-10 3M Innovative Properties Company Method for making a thin film layer
US7572741B2 (en) * 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
WO2007034541A1 (ja) * 2005-09-21 2007-03-29 Tadahiro Ohmi 減圧蒸着装置及び減圧蒸着方法
KR101130545B1 (ko) * 2005-11-26 2012-03-23 엘지디스플레이 주식회사 유기 전계발광 표시소자의 유기 발광물질 증착방법
US20070178225A1 (en) * 2005-12-14 2007-08-02 Keiji Takanosu Vapor deposition crucible, thin-film forming apparatus comprising the same, and method of producing display device
EP1801843B1 (de) * 2005-12-22 2013-07-03 Applied Materials GmbH & Co. KG Anlage und Verfahren zur Behandlung von Substraten
DE102005061563A1 (de) * 2005-12-22 2007-07-19 Applied Materials Gmbh & Co. Kg Anlage zur Behandlung von Substraten und Verfahren
DE102006003847B4 (de) * 2006-01-26 2011-08-18 Siemens AG, 80333 Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat
US8261690B2 (en) * 2006-07-14 2012-09-11 Georgia Tech Research Corporation In-situ flux measurement devices, methods, and systems
TW200809739A (en) * 2006-08-08 2008-02-16 Ritdisplay Corp Method for fabricating active matrix organic electro-luminescence display panel
WO2008069259A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
JP4974672B2 (ja) * 2006-12-28 2012-07-11 東京エレクトロン株式会社 圧力波発生装置
KR100866935B1 (ko) * 2007-02-26 2008-11-04 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법
US20080214007A1 (en) * 2007-03-02 2008-09-04 Texas Instruments Incorporated Method for removing diamond like carbon residue from a deposition/etch chamber using a plasma clean
CN101271869B (zh) * 2007-03-22 2015-11-25 株式会社半导体能源研究所 发光器件的制造方法
JP2008248311A (ja) * 2007-03-30 2008-10-16 Fujifilm Corp 真空蒸着装置
US20080268136A1 (en) * 2007-04-27 2008-10-30 Canon Kabushiki Kaisha Method of producing organic light emitting apparatus
EP1998389B1 (en) 2007-05-31 2018-01-31 Applied Materials, Inc. Method of cleaning a patterning device, method of depositing a layer system on a substrate, system for cleaning a patterning device, and coating system for depositing a layer system on a substrate
WO2008149741A1 (ja) * 2007-05-31 2008-12-11 Ulvac, Inc. プラズマ処理装置のドライクリーニング方法
KR101563237B1 (ko) * 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
US20090098309A1 (en) * 2007-10-15 2009-04-16 Advantech Global, Ltd In-Situ Etching Of Shadow Masks Of A Continuous In-Line Shadow Mask Vapor Deposition System
KR20090041314A (ko) * 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
US8153201B2 (en) 2007-10-23 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light-emitting device, and evaporation donor substrate
US8425974B2 (en) * 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
JP2009138210A (ja) * 2007-12-04 2009-06-25 Sony Corp 成膜装置および成膜方法ならびに発光装置の製造方法
KR101689519B1 (ko) * 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
WO2009099002A1 (en) * 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
JP5416987B2 (ja) 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP2009231277A (ja) * 2008-02-29 2009-10-08 Semiconductor Energy Lab Co Ltd 製造装置
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
KR101143623B1 (ko) * 2008-03-10 2012-05-09 에스케이하이닉스 주식회사 산화 처리를 이용한 위상반전마스크 형성방법
US8182863B2 (en) * 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
US7993945B2 (en) * 2008-04-11 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US7932112B2 (en) * 2008-04-14 2011-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
JP5159689B2 (ja) * 2008-04-25 2013-03-06 株式会社半導体エネルギー研究所 発光装置の作製方法
EP2135970A1 (en) * 2008-06-20 2009-12-23 Applied Materials, Inc. Processing system and method for processing a substrate
JP5469950B2 (ja) * 2008-08-08 2014-04-16 株式会社半導体エネルギー研究所 発光装置の作製方法
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
KR100994118B1 (ko) * 2009-01-13 2010-11-15 삼성모바일디스플레이주식회사 유기 발광 소자 및 그 제조 방법
JP5088331B2 (ja) * 2009-01-26 2012-12-05 東京エレクトロン株式会社 熱処理装置用の構成部品及び熱処理装置
EP2230703A3 (en) 2009-03-18 2012-05-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus and manufacturing method of lighting device
FR2946462B1 (fr) 2009-06-09 2011-07-01 Commissariat Energie Atomique Procede de realisation d'au moins un microcomposant avec un masque unique
US8486737B2 (en) * 2009-08-25 2013-07-16 Samsung Display Co., Ltd. Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same
JP5328726B2 (ja) * 2009-08-25 2013-10-30 三星ディスプレイ株式會社 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法
DE102009038519B4 (de) * 2009-08-25 2012-05-31 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Herstellung von Stöchiometriegradientenschichten
JP5677785B2 (ja) * 2009-08-27 2015-02-25 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
JP5611718B2 (ja) * 2009-08-27 2014-10-22 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
JP4599469B1 (ja) 2009-08-31 2010-12-15 富士フイルム株式会社 有機電界発光素子用材料及び有機電界発光素子
US20110052795A1 (en) * 2009-09-01 2011-03-03 Samsung Mobile Display Co., Ltd. Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same
KR101073558B1 (ko) * 2009-10-08 2011-10-17 삼성모바일디스플레이주식회사 기판 합착 장치 및 기판 합착 방법
US8876975B2 (en) 2009-10-19 2014-11-04 Samsung Display Co., Ltd. Thin film deposition apparatus
EP2315234A1 (en) * 2009-10-20 2011-04-27 Applied Materials, Inc. Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices
KR101156431B1 (ko) * 2009-12-01 2012-06-18 삼성모바일디스플레이주식회사 증착 장치 및 이를 이용한 유기 발광 소자 제조 방법
KR101084184B1 (ko) * 2010-01-11 2011-11-17 삼성모바일디스플레이주식회사 박막 증착 장치
KR101174875B1 (ko) * 2010-01-14 2012-08-17 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR101193186B1 (ko) 2010-02-01 2012-10-19 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
JP5237982B2 (ja) * 2010-03-10 2013-07-17 株式会社日立ハイテクノロジーズ 有機ｅｌ用蒸着マスククリーニング装置、有機ｅｌディスプレイの製造装置および有機ｅｌ用蒸着マスククリーニング方法
KR101156441B1 (ko) * 2010-03-11 2012-06-18 삼성모바일디스플레이주식회사 박막 증착 장치
KR101202348B1 (ko) 2010-04-06 2012-11-16 삼성디스플레이 주식회사 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법
US8894458B2 (en) 2010-04-28 2014-11-25 Samsung Display Co., Ltd. Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method
KR101223723B1 (ko) 2010-07-07 2013-01-18 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
TW201204845A (en) * 2010-07-16 2012-02-01 Hon Hai Prec Ind Co Ltd Processing apparatus for smoothing film material and evaporation deposition device with same
KR20120039944A (ko) * 2010-10-18 2012-04-26 삼성모바일디스플레이주식회사 기판 증착 시스템 및 증착 방법
KR101738531B1 (ko) 2010-10-22 2017-05-23 삼성디스플레이 주식회사 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR101723506B1 (ko) 2010-10-22 2017-04-19 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR20120045865A (ko) 2010-11-01 2012-05-09 삼성모바일디스플레이주식회사 유기층 증착 장치
DE102010062082A1 (de) * 2010-11-29 2012-05-31 4Jet Sales + Service Gmbh Reinigen von Oberflächen in Vakuumapparaturen mittels Laser
CN103237916B (zh) * 2010-12-03 2015-07-22 夏普株式会社 蒸镀装置和回收装置
KR20120065789A (ko) 2010-12-13 2012-06-21 삼성모바일디스플레이주식회사 유기층 증착 장치
KR101760897B1 (ko) 2011-01-12 2017-07-25 삼성디스플레이 주식회사 증착원 및 이를 구비하는 유기막 증착 장치
US9722212B2 (en) * 2011-02-14 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Lighting device, light-emitting device, and manufacturing method and manufacturing apparatus thereof
US20120263887A1 (en) * 2011-04-13 2012-10-18 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for ion-assisted atomic layer deposition
US8940411B2 (en) 2011-04-25 2015-01-27 General Electric Company Materials for optoelectronic devices
KR101852517B1 (ko) 2011-05-25 2018-04-27 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR101840654B1 (ko) 2011-05-25 2018-03-22 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR101857249B1 (ko) 2011-05-27 2018-05-14 삼성디스플레이 주식회사 패터닝 슬릿 시트 어셈블리, 유기막 증착 장치, 유기 발광 표시장치제조 방법 및 유기 발광 표시 장치
TWI433625B (zh) 2011-07-04 2014-04-01 Ind Tech Res Inst 軟性電子元件的製法
KR101826068B1 (ko) 2011-07-04 2018-02-07 삼성디스플레이 주식회사 유기층 증착 장치
DE102011113274A1 (de) * 2011-09-01 2013-03-07 Schmid Vacuum Technology Gmbh Beschichtungsanlage
JP5779804B2 (ja) * 2011-10-12 2015-09-16 日東電工株式会社 有機エレクトロルミネッセンス素子の製造方法
JP2013161570A (ja) * 2012-02-02 2013-08-19 Nitto Denko Corp 有機ｅｌデバイスの製造方法及び製造装置
US20130137273A1 (en) * 2011-11-28 2013-05-30 Infineon Technologies Ag Semiconductor Processing System
JP5875851B2 (ja) * 2011-12-20 2016-03-02 株式会社アルバック 薄膜製造方法、薄膜製造装置
CN102534506A (zh) * 2012-01-20 2012-07-04 纳峰真空镀膜（上海）有限公司 低温真空镀膜装置
US8785235B2 (en) * 2012-02-10 2014-07-22 Tsmc Solar Ltd. Apparatus and method for producing solar cells
CN103325953B (zh) * 2012-03-19 2016-02-10 瀚宇彩晶股份有限公司 有机发光二极管封装及其封装方法
US20130302937A1 (en) * 2012-05-10 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Film Formation Apparatus, Method for Forming Film, Method for Forming Multilayer Film or Light-Emitting Element, and Method for Cleaning Shadow Mask
KR101938365B1 (ko) * 2012-07-31 2019-04-12 삼성디스플레이 주식회사 증착 장치 및 이를 이용한 증착량 측정 방법
KR102003199B1 (ko) * 2012-12-18 2019-07-24 주식회사 원익아이피에스 박막증착장치
KR102075527B1 (ko) 2013-05-16 2020-02-11 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
CN104213078A (zh) * 2013-05-30 2014-12-17 海洋王照明科技股份有限公司 一种低浓度掺杂的蒸发设备
KR102181233B1 (ko) * 2013-07-19 2020-11-23 삼성디스플레이 주식회사 기상 증착 장치 및 이를 이용한 표시 장치의 제조방법
CN103474453B (zh) * 2013-09-23 2016-09-21 京东方科技集团股份有限公司 电致发光装置及其制备方法
JP2015133444A (ja) * 2014-01-15 2015-07-23 株式会社東芝 半導体製造装置および半導体装置の製造方法
WO2015140731A1 (en) * 2014-03-18 2015-09-24 3D-Oxides Deposition process based on stencil mask and application to the fabrication of tags supporting multi-functional traceable codes
EP2999019B1 (en) * 2014-09-19 2019-06-12 Novaled GmbH Organic light-emitting diode including an electron transport layer stack comprising different lithium compounds and elemental metal
CN104404450B (zh) * 2014-10-28 2018-06-01 深圳市华星光电技术有限公司 用于升华型oled材料蒸镀的坩埚
CN104460072B (zh) * 2014-12-31 2018-01-05 深圳市华星光电技术有限公司 基板烘烤装置
CN106256925B (zh) * 2015-06-18 2020-10-02 佳能特机株式会社 真空蒸镀装置、蒸镀膜的制造方法和有机电子器件的制造方法
CN105088142B (zh) * 2015-07-30 2017-06-16 京东方科技集团股份有限公司 一种蒸镀方法
WO2017048696A1 (en) * 2015-09-16 2017-03-23 Advantech Global, Ltd Evaporative deposition with improved deposition source
CN105137660A (zh) * 2015-09-25 2015-12-09 京东方科技集团股份有限公司 一种光配向膜杂质去除装置和方法
CN105132861A (zh) * 2015-10-13 2015-12-09 京东方科技集团股份有限公司 一种蒸镀掩膜版以及蒸镀设备
JP6585180B2 (ja) * 2015-10-22 2019-10-02 東京エレクトロン株式会社 膜形成装置及び膜形成方法
CN107282547A (zh) * 2016-03-30 2017-10-24 东莞新科技术研究开发有限公司 电子元件的清洗方法
CN106222615B (zh) * 2016-08-23 2019-05-21 电子科技大学 高通量组合材料芯片及其制备方法、制备装置
JP2019503431A (ja) * 2016-12-12 2019-02-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板上に材料を堆積する装置、基板上に１つ以上の層を堆積するシステム、及び真空堆積システムをモニタする方法
EP3366804B1 (en) * 2017-02-22 2022-05-11 Satisloh AG Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
EP3366805B1 (en) * 2017-02-24 2022-01-12 Satisloh AG Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses, and heating device for it
WO2018166622A1 (en) * 2017-03-17 2018-09-20 Applied Materials, Inc. Methods of operating a vacuum processing system
US10886468B2 (en) 2017-04-14 2021-01-05 Sakai Display Products Corporation Manufacturing method and manufacturing apparatus for organic EL display device
KR102488145B1 (ko) * 2017-05-30 2023-01-17 삼성디스플레이 주식회사 마스크 세정 장치 및 마스크 세정 방법
CN107123754A (zh) * 2017-06-14 2017-09-01 京东方科技集团股份有限公司 一种有机电致发光器件及制备方法、蒸镀设备
JP6662840B2 (ja) * 2017-12-11 2020-03-11 株式会社アルバック 蒸着装置
US10766057B2 (en) * 2017-12-28 2020-09-08 Micron Technology, Inc. Components and systems for cleaning a tool for forming a semiconductor device, and related methods
US10227693B1 (en) * 2018-01-31 2019-03-12 Axcelis Technologies, Inc. Outgassing impact on process chamber reduction via chamber pump and purge
JP6588128B2 (ja) * 2018-05-24 2019-10-09 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置の製造方法及び製造装置
CN108807129B (zh) * 2018-06-21 2020-09-01 北京蜃景光电科技有限公司 镀膜腔室清洗装置及镀膜腔室清洗方法
RU2711292C1 (ru) * 2018-11-21 2020-01-16 Акционерное Общество "Российский Концерн По Производству Электрической И Тепловой Энергии На Атомных Станциях" (Ао "Концерн Росэнергоатом") Способ дезактивации элемента конструкции ядерного реактора
KR102469600B1 (ko) * 2018-12-03 2022-11-22 가부시키가이샤 아루박 성막장치 및 성막방법
JP7309882B2 (ja) * 2018-12-21 2023-07-18 アプライド マテリアルズ インコーポレイテッド 真空チャンバ内で基板をコーティングするための気相堆積装置及び方法
KR102697922B1 (ko) * 2019-01-09 2024-08-22 삼성전자주식회사 원자층 증착 장치 및 이를 이용한 박막 형성 방법
US11266005B2 (en) * 2019-02-07 2022-03-01 Fermi Research Alliance, Llc Methods for treating superconducting cavities
CN110016696B (zh) * 2019-03-25 2023-04-07 广东工业大学 一种基于光致导电电极板的微电铸装置及其微电铸方法
WO2020222065A1 (ja) * 2019-04-30 2020-11-05 株式会社半導体エネルギー研究所 固体二次電池の製造装置及び固体二次電池の作製方法
CN109972099B (zh) * 2019-05-10 2020-11-27 福建农林大学 一种制备片状氧化铁的方法
KR20210061639A (ko) * 2019-11-20 2021-05-28 캐논 톡키 가부시키가이샤 성막 장치, 이를 사용한 성막 방법 및 전자 디바이스 제조 방법
CN111367361B (zh) * 2020-02-29 2023-04-21 重庆顺贞科技有限公司 一种笔记本外壳转轴
RU2740591C1 (ru) * 2020-05-27 2021-01-15 Федеральное государственное бюджетное образовательное учреждение высшего образования "Ростовский государственный университет путей сообщения" (ФГБОУ ВО РГУПС) Способ получения многослойных износостойких алмазоподобных покрытий
CN115768916A (zh) * 2020-06-29 2023-03-07 应用材料公司 喷嘴组件、蒸发源和用于将蒸发的材料沉积至基板上的沉积系统和方法
CN112634758A (zh) * 2020-12-18 2021-04-09 惠州视维新技术有限公司 一种柔性屏的封装方法及封装系统
CN113075858A (zh) * 2021-03-26 2021-07-06 歌尔股份有限公司 中间转印模板的处理方法
WO2023011733A1 (en) * 2021-08-06 2023-02-09 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Method of operating an evaporation system, deflection device, and evaporation system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000355769A (ja) * 1999-06-14 2000-12-26 Mitsubishi Electric Corp クリーニングガスの除害方法および除害装置
US6271498B1 (en) * 1997-06-23 2001-08-07 Nissin Electric Co., Ltd Apparatus for vaporizing liquid raw material and method of cleaning CVD apparatus

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130661A (ja) * 1984-07-19 1986-02-12 Matsushita Electric Ind Co Ltd 被膜形成装置
JPS61235553A (ja) * 1985-04-12 1986-10-20 Citizen Watch Co Ltd 有色ｉｐパタ−ン被膜の形成方法
US5039561A (en) * 1986-08-25 1991-08-13 Minnesota Mining And Manufacturing Company Method for preparing an article having surface layer of uniformly oriented, crystalline, organic microstructures
JPH01119662A (ja) * 1987-10-30 1989-05-11 Sumitomo Electric Ind Ltd 有機物薄膜の製造法
US4987851A (en) 1988-01-12 1991-01-29 Kabushiki Kaisha Toshiba Apparatus for forming organic thin film
JPH0445259A (ja) * 1990-06-11 1992-02-14 Ulvac Japan Ltd 成膜装置
JPH04236759A (ja) * 1991-01-19 1992-08-25 Hitachi Cable Ltd 蒸着装置
JP3049799B2 (ja) * 1991-02-27 2000-06-05 ソニー株式会社 プラズマ処理装置
JPH06116097A (ja) * 1992-10-08 1994-04-26 Mitsubishi Kasei Corp 不純物が添加された有機ポリシラン薄膜又は炭化ケイ素薄膜及びその製造方法
JP3115134B2 (ja) * 1992-11-27 2000-12-04 松下電器産業株式会社 薄膜処理装置および薄膜処理方法
JPH0762526A (ja) * 1993-08-19 1995-03-07 Mitsubishi Chem Corp 有機電界発光素子の製造方法
JP3044168B2 (ja) * 1994-09-20 2000-05-22 三菱電機株式会社 有機分子の薄膜製造方法および薄膜パターン製造方法
JPH08319586A (ja) * 1995-05-24 1996-12-03 Nec Yamagata Ltd 真空処理装置のクリーニング方法
US6106627A (en) * 1996-04-04 2000-08-22 Sigma Laboratories Of Arizona, Inc. Apparatus for producing metal coated polymers
KR100479000B1 (ko) 1996-05-15 2005-08-01 세이코 엡슨 가부시키가이샤 박막디바이스,액정패널및전자기기및박막디바이스의제조방법
US6037712A (en) 1996-06-10 2000-03-14 Tdk Corporation Organic electroluminescence display device and producing method thereof
JPH10102234A (ja) * 1996-09-26 1998-04-21 Canon Inc スパッタ装置及び該装置を用いた成膜方法
US6294025B1 (en) * 1996-11-01 2001-09-25 THEVA DüNNSCHICHTTECHNIK GMBH Device for producing oxidic thin films
JP4059946B2 (ja) 1996-12-06 2008-03-12 株式会社アルバック 有機薄膜形成装置及び有機材料の再利用方法
JPH10294181A (ja) * 1997-02-24 1998-11-04 Toray Ind Inc 有機電界発光素子およびその製造方法
DE69825893T2 (de) * 1997-05-08 2005-09-08 Matsushita Electric Industrial Co., Ltd., Kadoma Vorrichtung und verfahren zur herstellung eines aufzeichnungsträgers
JP3801730B2 (ja) * 1997-05-09 2006-07-26 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及びそれを用いた薄膜形成方法
JPH1161386A (ja) * 1997-08-22 1999-03-05 Fuji Electric Co Ltd 有機薄膜発光素子の成膜装置
TW475078B (en) 1997-09-30 2002-02-01 Toshiba Corp Liquid crystal display device and production of liquid crystal display device
US6337102B1 (en) 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
JPH11172418A (ja) * 1997-12-12 1999-06-29 Ulvac Corp 成膜装置
JP2000174094A (ja) * 1998-12-08 2000-06-23 Hitachi Ltd 半導体製造装置
TW455912B (en) * 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
JP2000243566A (ja) * 1999-02-19 2000-09-08 Sharp Corp 有機電界発光素子及びその製造方法
JP3734239B2 (ja) * 1999-04-02 2006-01-11 キヤノン株式会社 有機膜真空蒸着用マスク再生方法及び装置
JP2000328229A (ja) * 1999-05-19 2000-11-28 Canon Inc 真空蒸着装置
JP2001149877A (ja) * 1999-11-29 2001-06-05 Japan Steel Works Ltd:The 処理装置内のクリーニング方法及び装置
TW490714B (en) * 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
US20020011205A1 (en) * 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
JP4785269B2 (ja) 2000-05-02 2011-10-05 株式会社半導体エネルギー研究所 発光装置の作製方法及び成膜装置のクリーニング方法
JP3628939B2 (ja) * 2000-06-27 2005-03-16 松下電器産業株式会社 露光方法及び露光装置
JP2002322556A (ja) * 2001-02-21 2002-11-08 Semiconductor Energy Lab Co Ltd 成膜方法及び成膜装置
US7432116B2 (en) * 2001-02-21 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for film deposition
TWI277363B (en) * 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
TW589920B (en) 2003-04-04 2004-06-01 Au Optronics Corp Evaporation apparatus for organic light emitted diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271498B1 (en) * 1997-06-23 2001-08-07 Nissin Electric Co., Ltd Apparatus for vaporizing liquid raw material and method of cleaning CVD apparatus
JP2000355769A (ja) * 1999-06-14 2000-12-26 Mitsubishi Electric Corp クリーニングガスの除害方法および除害装置
US6544488B1 (en) * 1999-06-14 2003-04-08 Mitsubishi Denki Kabushiki Kaisha Method for decomposing a cleaning gas for cleaning a film deposition chamber

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US7763320B2 (en) 2010-07-27
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TW200303574A (en) 2003-09-01
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JP2008308766A (ja) 2008-12-25
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US20030124764A1 (en) 2003-07-03
US6776847B2 (en) 2004-08-17
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US7316983B2 (en) 2008-01-08
CN101054657A (zh) 2007-10-17
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US20050106322A1 (en) 2005-05-19
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TWI286348B (en) 2007-09-01
KR100955595B1 (ko) 2010-05-03

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