DE10345824A1 - Anordnung zur Abscheidung von atomaren Schichten auf Substraten - Google Patents
Anordnung zur Abscheidung von atomaren Schichten auf Substraten Download PDFInfo
- Publication number
- DE10345824A1 DE10345824A1 DE10345824A DE10345824A DE10345824A1 DE 10345824 A1 DE10345824 A1 DE 10345824A1 DE 10345824 A DE10345824 A DE 10345824A DE 10345824 A DE10345824 A DE 10345824A DE 10345824 A1 DE10345824 A1 DE 10345824A1
- Authority
- DE
- Germany
- Prior art keywords
- source
- arrangement
- connected together
- atomic layers
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Die Erfindung betrifft eine Anordnung zur Abscheidung von atomaren Schichten auf Substraten zur Erzeugung sehr dünner Filme in einer evakuierbaren Reaktionskammer, wobei die Substrate bzw. Wafer auf einer Waferaufnahme angeordnet sind und die Reaktionskammer über Ventile mit einer Quelle für TMA, Wasser sowie einem Reinigungsgas verbunden ist. Durch die Erfindung soll eine wesentliche Verbesserung des Beschichtungsprozesses erreicht werden. Erreicht wird das dadurch, dass die Quelle für TMA und die Quelle für Wasser über Einrichtungen zur direkten oder indirekten Einspritzung des TMA und des Wassers in die Reaktionskammer (1) mit dieser verbunden sind. Vorzugsweise bestehen die Einrichtungen zur Einspritzung aus Ventilen Vp1, Vp2, die als Einspritzventile ausgebildet sind.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10345824A DE10345824A1 (de) | 2003-09-30 | 2003-09-30 | Anordnung zur Abscheidung von atomaren Schichten auf Substraten |
US10/954,006 US20050126483A1 (en) | 2003-09-30 | 2004-09-29 | Arrangement for depositing atomic layers on substrates |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10345824A DE10345824A1 (de) | 2003-09-30 | 2003-09-30 | Anordnung zur Abscheidung von atomaren Schichten auf Substraten |
Publications (1)
Publication Number | Publication Date |
---|---|
DE10345824A1 true DE10345824A1 (de) | 2005-05-04 |
Family
ID=34399180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10345824A Withdrawn DE10345824A1 (de) | 2003-09-30 | 2003-09-30 | Anordnung zur Abscheidung von atomaren Schichten auf Substraten |
Country Status (2)
Country | Link |
---|---|
US (1) | US20050126483A1 (de) |
DE (1) | DE10345824A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018120580A1 (de) * | 2018-08-23 | 2020-02-27 | Infineon Technologies Ag | Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4074461B2 (ja) * | 2002-02-06 | 2008-04-09 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、半導体装置の製造方法 |
JP3985899B2 (ja) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | 基板処理装置 |
JP4691625B2 (ja) * | 2003-03-24 | 2011-06-01 | 独立行政法人科学技術振興機構 | カーボンナノ構造物の高効率合成方法、及び装置 |
US7628861B2 (en) * | 2004-12-17 | 2009-12-08 | Mks Instruments, Inc. | Pulsed mass flow delivery system and method |
US7628860B2 (en) * | 2004-04-12 | 2009-12-08 | Mks Instruments, Inc. | Pulsed mass flow delivery system and method |
FR2900070B1 (fr) * | 2006-04-19 | 2008-07-11 | Kemstream Soc Par Actions Simp | Dispositif d'introduction ou d'injection ou de pulverisation d'un melange de gaz vecteur et de composes liquides et procede de mise en oeuvre dudit dispositif. |
FR2900071B1 (fr) * | 2006-08-24 | 2009-02-13 | Kemstream Soc Par Actions Simp | Dispositif d'introduction ou d'injection ou de pulverisation d'un melange de gaz vecteur et de composes liquides et procede de mise en oeuvre dudit dispositif |
TWI506391B (zh) * | 2010-04-15 | 2015-11-01 | Novellus Systems Inc | 氣體及液體注射系統 |
JP5859586B2 (ja) * | 2013-12-27 | 2016-02-10 | 株式会社日立国際電気 | 基板処理システム、半導体装置の製造方法および記録媒体 |
JP6413293B2 (ja) * | 2014-03-27 | 2018-10-31 | 東京エレクトロン株式会社 | 成膜方法及び記憶媒体 |
CN113416945B (zh) * | 2021-06-24 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 原子层沉积设备的进气装置及原子层沉积设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000079019A1 (en) * | 1999-06-24 | 2000-12-28 | Prasad Narhar Gadgil | Apparatus for atomic layer chemical vapor deposition |
US20020160585A1 (en) * | 2001-02-02 | 2002-10-31 | Chang-Boo Park | Thin film deposition method |
US6521047B1 (en) * | 1999-11-08 | 2003-02-18 | Joint Industrial Processors For Electronics | Process and apparatus for liquid delivery into a chemical vapor deposition chamber |
WO2003016590A2 (de) * | 2001-08-01 | 2003-02-27 | Infineon Technologies Ag | Vorrichtung zur zufuhr von gasgemischen zu einem cvd-reaktor |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US168075A (en) * | 1875-09-21 | Improvement in furnace-grates for steam-generators | ||
US14566A (en) * | 1856-04-01 | Improved former for spiral springs | ||
US9019A (en) * | 1852-06-15 | Charles fleischbl | ||
US160585A (en) * | 1875-03-09 | Improvement in reversible pinions for watches | ||
ATE139580T1 (de) * | 1989-09-26 | 1996-07-15 | Canon Kk | Gasversorgungsvorrichtung und ihre verwendung für eine filmabscheidungsanlage |
JP3163687B2 (ja) * | 1991-11-12 | 2001-05-08 | 富士通株式会社 | 化学気相成長装置及び化学気相成長膜形成方法 |
JP3222518B2 (ja) * | 1991-12-26 | 2001-10-29 | キヤノン株式会社 | 液体原料気化装置および薄膜形成装置 |
EP0602595B1 (de) * | 1992-12-15 | 1997-07-23 | Applied Materials, Inc. | Verdampfung von flüssigen Reaktionspartnern für CVD |
JP3340532B2 (ja) * | 1993-10-20 | 2002-11-05 | 株式会社日立製作所 | ビデオの検索方法および装置 |
US6449662B1 (en) * | 1997-01-13 | 2002-09-10 | Micro Ear Technology, Inc. | System for programming hearing aids |
US5966499A (en) * | 1997-07-28 | 1999-10-12 | Mks Instruments, Inc. | System for delivering a substantially constant vapor flow to a chemical process reactor |
US6110556A (en) * | 1997-10-17 | 2000-08-29 | Applied Materials, Inc. | Lid assembly for a process chamber employing asymmetric flow geometries |
JP3065041B2 (ja) * | 1998-10-29 | 2000-07-12 | アプライド マテリアルズ インコーポレイテッド | 半導体デバイスの成膜方法及び成膜装置 |
US6503330B1 (en) * | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
KR100444149B1 (ko) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | Ald 박막증착설비용 클리닝방법 |
KR100461845B1 (ko) * | 2002-01-07 | 2004-12-14 | 주성엔지니어링(주) | 액체운송장치의 안정성 확보 시스템 |
US6932871B2 (en) * | 2002-04-16 | 2005-08-23 | Applied Materials, Inc. | Multi-station deposition apparatus and method |
US7279432B2 (en) * | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US7192486B2 (en) * | 2002-08-15 | 2007-03-20 | Applied Materials, Inc. | Clog-resistant gas delivery system |
-
2003
- 2003-09-30 DE DE10345824A patent/DE10345824A1/de not_active Withdrawn
-
2004
- 2004-09-29 US US10/954,006 patent/US20050126483A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000079019A1 (en) * | 1999-06-24 | 2000-12-28 | Prasad Narhar Gadgil | Apparatus for atomic layer chemical vapor deposition |
US6521047B1 (en) * | 1999-11-08 | 2003-02-18 | Joint Industrial Processors For Electronics | Process and apparatus for liquid delivery into a chemical vapor deposition chamber |
US20020160585A1 (en) * | 2001-02-02 | 2002-10-31 | Chang-Boo Park | Thin film deposition method |
WO2003016590A2 (de) * | 2001-08-01 | 2003-02-27 | Infineon Technologies Ag | Vorrichtung zur zufuhr von gasgemischen zu einem cvd-reaktor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018120580A1 (de) * | 2018-08-23 | 2020-02-27 | Infineon Technologies Ag | Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck |
US11479854B2 (en) | 2018-08-23 | 2022-10-25 | Infineon Technologies Ag | Apparatus and method of depositing a layer at atmospheric pressure |
Also Published As
Publication number | Publication date |
---|---|
US20050126483A1 (en) | 2005-06-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8127 | New person/name/address of the applicant |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |
|
8130 | Withdrawal |