JP5111287B2 - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP5111287B2 JP5111287B2 JP2008205956A JP2008205956A JP5111287B2 JP 5111287 B2 JP5111287 B2 JP 5111287B2 JP 2008205956 A JP2008205956 A JP 2008205956A JP 2008205956 A JP2008205956 A JP 2008205956A JP 5111287 B2 JP5111287 B2 JP 5111287B2
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Description
本発明における成膜装置の構成について図1を用いて説明する。図1は、本発明の成膜装置における断面図の一例である。
とすることが好ましく、基板10は、被成膜面を下向きにしてセットされている。フェイスダウン方式とは、基板の被成膜面が下を向いた状態で成膜する方式をいい、この方式によればゴミの付着などを抑えることができる。
から導入することによって成膜室の大気開放を極力さけることが好ましい。成膜室を大気開放することにより、内壁には水分をはじめ様々なガスが吸着し、これが真空排気をすることにより再度放出される。吸着したガスの放出が収まり真空度が平衡値に安定するまでの時間は、数十〜数百時間を要する。そのために成膜室の壁をベーキング処理してその時間を短縮させている。しかし、繰り返し大気開放することは効率的な手法ではないので、専用の材料交換室を設けることが望ましい。
を分離し、高純度EL材料のみで成膜を行ってもよい。また、本明細書中では、高純度EL材料よりも昇華温度の高い物質(不純物)を高温材料とよび、昇華温度の低い物質(不純物)を低温材料とよぶことにする。また、高温と低温の中間に位置する温度で昇華する高純度EL材料を中温材料と呼ぶことにする。なお、温度毎に析出した材料を予め質量分析(GC−MS)等の分析により調べておくことで、純粋なEL材料の昇華温度を調べることができる。
装置内部に不純物が導入されるのを防ぐため、導入するガスとしては、窒素や希ガス等の不活性ガスを用いる。装置内部に導入されるこれらのガスは、装置内に導入される前にガス精製機により高純度化されたものを用いる。従って、ガスが高純度化された後に成膜装置に導入されるようにガス精製機を備えておく必要がある。これにより、ガス中に含まれる酸素や水、その他の不純物を予め除去することができるため、装置内部にこれらの不純物が導入されるのを防ぐことができる。
なお、基板を搬入する前に成膜室内は真空排気しておくことが好ましい。
このアニール(脱気)によって基板に付着した酸素や水分などの不純物や、基板上に形成した膜中の酸素や水分などの不純物を除去する。こうして除去された不純物を成膜室から除去するため、真空排気を行うことが好ましく、さらに真空度を高めてもよい。
に示したフローに対応している。
ここでは、実施の形態1と異なる成膜装置を図3に示す。
本発明における成膜装置の構成について図13を用いて説明する。図13は、本発明の成膜装置における断面図の一例である。
物理的な成膜法の代表的な例として、真空下で蒸発源から蒸発材料を蒸発させて成膜する真空蒸着法が知られている。また、化学的な成膜法の代表的な例として、原料ガスを基板上に供給し、気相中または基板表面での化学反応により成膜するCVD(化学蒸着)法が知られている。
は約550℃であるので分解はしない。蒸発させる有機材料によってはSiH4、或いはSiHXと反応して化合物を形成する場合もある。また、成膜室中に僅かに残っている酸素(または水分)を捕獲してSiOXを生成するため、成膜室中および膜中において有機材料を劣化させる要因となる酸素(または水分)を減らすことができ、結果的に発光素子の信頼性を向上させることができる。また、生成されたSiOxはそのまま膜中に含ませてもよい。
なお、ここでのアライメントの方法については、図5で説明した方法で行えばよい。また、成膜室503でアライメントを行ってもよい。なお、搬送室(A)502は排気系500bを備えている。また、ロード室501とは図示しないゲートで密閉遮断されている。
また、搬送室(A)502とは図示しないゲートで密閉遮断されている。
また、搬送室(B)506とは図示しないゲートで密閉遮断されている。さらに成膜室(A)503と同様に図示しないゲートで密閉遮断されたクリーニング予備室513dを備えている。
なお、これらの複数の機能を有し、緑色発光を示す有機化合物膜を形成する有機化合物としては公知の材料を用いれば良い。
また、搬送室(C)508とは図示しないゲートで密閉遮断されている。さらに成膜室(A)503と同様に図示しないゲートで密閉遮断されたクリーニング予備室513fを備えている。
また、一つの蒸着源に備えられる有機化合物は必ずしも一つである必要はなく、複数であっても良い。例えば、蒸着源に発光性の有機化合物として備えられている一種類の材料の他に、ドーパントとなりうる別の有機化合物を一緒に備えておいても良い。なお、これらの複数の機能を有し、青色発光を示す有機化合物膜を形成する有機化合物としては公知の材料を用いれば良い。
本実施例では、成膜室(D)712内の成膜部713において、発光素子の陰極となる導電膜としてAl−Li合金膜(アルミニウムとリチウムとの合金膜)を成膜する。なお、周期表の1族もしくは2族に属する元素とアルミニウムとを共蒸着することも可能である。
図8は、アクティブマトリクス型発光装置の断面図である。なお、能動素子としてここでは薄膜トランジスタ(以下、「TFT」と記す)を用いているが、MOSトランジスタを用いてもよい。
この加熱処理は、電気炉の熱処理または強光の照射を用いればよい。電気炉の熱処理で行う場合は、500℃〜650℃で4〜24時間で行えばよい。ここでは脱水素化のための熱処理(500℃、1時間)の後、結晶化のための熱処理(550℃、4時間)を行って結晶構造を有するシリコン膜を得た。なお、ここでは炉を用いた熱処理を用いて結晶化を行ったが、短時間での結晶化が可能なランプアニール装置で結晶化を行ってもよい。
ここでは、第3のエッチング条件としてエッチング用ガスにCF4とCl2とを用い、それぞれのガス流量比を30/30(sccm)とし、1Paの圧力でコイル型の電極に500WのRF(13.56MHz)電力を投入してプラズマを生成してエッチングを60秒行った。基板側(試料ステージ)にも20WのRF(13.56MHz)
電力を投入し、実質的に負の自己バイアス電圧を印加する。この後、レジストからなるマスクを除去せずに第4のエッチング条件に変え、エッチング用ガスにCF4とCl2とO2とを用い、それぞれのガス流量比を20/20/20(sccm)とし、1Paの圧力でコイル型の電極に500WのRF(13.56MHz)電力を投入してプラズマを生成して約20秒程度のエッチングを行った。基板側(試料ステージ)にも20WのRF(13.56MHz)電力を投入し、実質的に負の自己バイアス電圧を印加する。なお、ここでは、第3のエッチング条件及び第4のエッチング条件を第2のエッチング処理と呼ぶこととする。この段階で第1の導電層804aを下層とし、第2の導電層804bを上層とするゲート電極804および各電極805〜807が形成される。
第3のドーピング処理はイオンドープ法、もしくはイオン注入法で行えば良い。
n型を付与する不純物元素として、典型的にはリン(P)または砒素(As)を用いる。ここでは、イオンドープ法を用い、フォスフィン(PH3)を水素で5%に希釈したガスを流量40sccmとし、ドーズ量を2×1015atoms/cm2とし、加速電圧を80keVとして行う。この場合、レジストからなるマスクと第1の導電層及び第2の導電層がn型を付与する不純物元素に対するマスクとなり、第3の不純物領域813、814、826〜828が形成される。第3の不純物領域には1×1020〜1×1021/cm3の濃度範囲でn型を付与する不純物元素を添加される。ここでは、第3の不純物領域と同じ濃度範囲の領域をn+領域とも呼ぶ。
が添加された領域(n--領域)であるが、p型を付与する不純物元素の濃度がその1.5〜3倍添加されていて導電型はp型となっている。ここでは、第4の不純物領域と同じ濃度範囲の領域をp+領域とも呼ぶ。
とを示したが、該TFTのゲート電極の先には複数のTFTなどからなる様々な回路を設けてもよく、特に限定されないことは言うまでもない。
のみを示したが、該TFTのゲート電極の先には複数のTFTなどからなる様々な回路を設けてもよく、特に限定されないことは言うまでもない。
また、カバー材620には凹部を設け、乾燥剤621を設置してもよい。
Claims (4)
- 成膜室内で蒸発源から有機化合物材料を蒸発させる際に、モノシラン、ジシラン、トリシラン、SiF 4 、GeH 4 、GeF 4 、SnH 4 、CH 4 、C 2 H 2 、C 2 H 4 又はC 6 H 6 から選ばれた一種又は複数種を、前記成膜室内に流して基板上に有機化合物膜を蒸着した後、前記基板を前記成膜室から取り出し、前記蒸着の際に用いた蒸着マスクと対向する位置に可動式の電極を移動し、前記蒸着マスクと前記可動式の電極との間でプラズマを発生させることを特徴とする成膜方法。
- 成膜室内で蒸発源から有機化合物材料を蒸発させる際にモノシランを前記成膜室内に流して基板上に有機化合物膜を蒸着した後、前記基板を前記成膜室から取り出し、前記蒸着の際に用いた蒸着マスクと対向する位置に可動式の電極を移動し、前記蒸着マスクと前記可動式の電極との間でプラズマを発生することを特徴とする成膜方法。
- 成膜室内で蒸発源から有機化合物材料を蒸発させる際にモノシランとフォスフィンを前記成膜室内に流して基板上に有機化合物膜を蒸着した後、前記基板を前記成膜室から取り出し、前記蒸着の際に用いた蒸着マスクと対向する位置に可動式の電極を移動し、前記蒸着マスクと前記可動式の電極との間でプラズマを発生することを特徴とする成膜方法。
- 成膜室内で蒸発源から有機化合物材料を蒸発させる際に、AsH 3 、B 2 H 2 、BF 4 、H 2 Te、Cd(CH 3 ) 2 、Zn(CH 3 ) 2 、(CH 3 ) 3 In、H 2 Se、BeH 2 、トリメチルガリウム、またはトリエチルガリウムを、前記成膜室内に流して基板上に有機化合物膜を蒸着した後、前記基板を前記成膜室から取り出し、前記蒸着の際に用いた蒸着マスクと対向する位置に可動式の電極を移動し、前記蒸着マスクと前記可動式の電極との間でプラズマを発生することを特徴とする成膜方法。
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CN1319116C (zh) | 2007-05-30 |
KR100955595B1 (ko) | 2010-05-03 |
SG149680A1 (en) | 2009-02-27 |
KR20030048348A (ko) | 2003-06-19 |
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US20050106322A1 (en) | 2005-05-19 |
CN1428817A (zh) | 2003-07-09 |
US6776847B2 (en) | 2004-08-17 |
JP5288660B2 (ja) | 2013-09-11 |
US7763320B2 (en) | 2010-07-27 |
US7316983B2 (en) | 2008-01-08 |
CN101054657B (zh) | 2012-05-23 |
TW200303574A (en) | 2003-09-01 |
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