JP7117396B2 - 成膜装置および成膜方法 - Google Patents
成膜装置および成膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 26
- 239000007789 gas Substances 0.000 claims description 97
- 239000011347 resin Substances 0.000 claims description 65
- 229920005989 resin Polymers 0.000 claims description 65
- 238000004140 cleaning Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 37
- 239000001301 oxygen Substances 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 239000002994 raw material Substances 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000008016 vaporization Effects 0.000 claims description 5
- 238000009834 vaporization Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 description 10
- 239000006200 vaporizer Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
- B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
- B05D3/065—After-treatment
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Crystals, And After-Treatments Of Crystals (AREA)
- Coating Apparatus (AREA)
Description
前記チャンバは、成膜室を有するチャンバ本体と、窓部を有し前記チャンバ本体に取り付けられた天板とを有する。
前記ステージは、前記成膜室に配置され、基板を支持する支持面を有する。
前記光源ユニットは、前記天板に設置され、前記窓部を介してエネルギ線を前記支持面に照射する照射源を有する。
前記ガス供給部は、前記エネルギ線の照射を受けて硬化するエネルギ線硬化樹脂を含む原料ガスを前記成膜室に供給する。
前記クリーニングユニットは、前記チャンバに接続され、前記天板に付着した前記エネルギ線硬化樹脂を除去するクリーニングガスを前記成膜室へ導入する。
前記照射源から前記窓部を介してエネルギ線を照射することで、前記エネルギ線硬化樹脂の硬化物層が形成される。
前記天板に付着したエネルギ線硬化樹脂がクリーニングガスで除去される。
成膜装置100は、チャンバ10を備える。チャンバ10は、チャンバ本体11と、チャンバ本体11の開口部11aを気密に閉塞する天板12とを有する。
成膜装置100は、ステージ15と、光源ユニット20と、ガス供給部30と、クリーニングユニット40とをさらに備える。
チャンバ本体11は、上部が開口する金属製の直方体形状の真空容器であり、内部に成膜室13を有する。成膜室13は、チャンバ本体11の底部に接続された真空排気系19を介して所定の減圧雰囲気に排気または維持することが可能に構成される。
ステージ15は、成膜室13に配置される。ステージ15は、基板Wを支持する支持面151aを有するステージ本体151を有する。
光源ユニット20は、カバー21と、照射源22とを有する。カバー21は、天板12の上に配置され、照射源22を収容する光源室23を有する。光源室23は、例えば、大気雰囲気である。照射源22は、ステージ15の支持面151aに向けて、天板12の窓部121を介してエネルギ線としての紫外線UVを照射する光源であり、典型的には、紫外線ランプで構成される。これに限られず、照射源22には、紫外線UVを発光する複数のLED(Light Emitting Diode)がマトリクス状に配列された光源モジュールが採用されてもよい。
ガス供給部30は、紫外線UVの照射を受けて硬化する樹脂(紫外線硬化樹脂)を含む原料ガスを成膜室13へ供給する。ガス供給部30は任意に構成可能であり、本実施形態ではシャワープレート31と、空間部32とを有する。
そこで本実施形態では、天板12、シャワープレート31、チャンバ本体11の開口部11a等に付着した原料ガス中の樹脂成分を除去するためのクリーニングユニット40を備える。
クリーニングユニット40は、チャンバ10に接続され、空間部32にクリーニングガスを導入する。本実施形態においてクリーニングユニット40は、クリーニングガスとして酸素プラズマを発生させるプラズマ発生器41を含む。
続いて、以上のように構成される本実施形態の成膜装置100を用いた成膜方法について説明する。
成膜工程では、紫外線硬化樹脂を含む原料ガスの供給工程と、紫外線樹脂層の硬化工程とを有する。
クリーニング工程は、原料ガスの供給が停止した状態で実施される。各プラズマ発生器41(411,412)において発生した酸素プラズマ(酸素ラジカル)は、配管42を介してガス供給部30の空間部32へ導入される。空間部32の内面(天板12、シャワープレート31、チャンバ本体11の開口部11a)に付着した紫外線硬化樹脂の炭素は、酸素ラジカルと結合してCO2として気化し、分解される。分解した紫外線硬化樹脂は、成膜室13を介して真空排気系19により排気される。
以上の実施形態では、ガス供給部30をシャワープレート31で構成したが、これに限られない。例えば図3に示すように、ガス供給部30'として、天板12とステージ15との間に配置された複数のガス供給配管33が採用されてもよい。
11…チャンバ本体
12…天板
13…成膜室
15…ステージ
20…光源ユニット
22…照射源
30,30'…ガス供給部
31…シャワープレート
32…空間部
40…クリーニングユニット
41,411,412…プラズマ発生器
100…成膜装置
151a…支持面
121…窓部
122…枠部
311…ガス供給孔
341…第1の加熱源
Claims (3)
- 成膜室を有するチャンバ本体と、前記チャンバ本体に取り付けられた天板とを有し、前記天板は、窓部と、前記窓部を支持し第1の加熱源を含む枠部とを有するチャンバと、
前記成膜室に配置され、基板を支持する支持面を有するステージと、
前記天板に設置され、前記窓部を介してエネルギ線を前記支持面に照射する照射源を有する光源ユニットと、
前記天板に対向して配置され前記エネルギ線を透過させる材料で構成され、成膜室に対向した面に第2の加熱源が取り付けられたシャワープレートと、前記天板と前記シャワープレートとの間に形成され、前記エネルギ線の照射を受けて硬化するエネルギ線硬化樹脂を含む原料ガスが導入される空間部とを有し、原料ガスを前記空間部から前記シャワープレートを通して前記成膜室に供給するガス供給部と、
前記チャンバに接続され、前記窓部に堆積した前記エネルギ線硬化樹脂を除去するクリーニングガスを前記原料ガスとは異なる配管から前記空間部へ導入するクリーニングユニットと
を具備し、
前記第1の加熱源は、前記枠部を前記エネルギ線硬化樹脂の気化温度以上に加熱し、
前記第2の加熱源は、前記シャワープレートを前記エネルギ線硬化樹脂の気化温度以上に加熱し、
前記クリーニングユニットは、前記クリーニングガスとして酸素プラズマを発生させるプラズマ発生器を含み、
前記プラズマ発生器は、前記ガス供給部の一辺に沿って配置される複数の第1プラズマ発生器と、前記一辺に隣接する他の二辺にそれぞれ配置される複数の第2プラズマ発生器とを含み、
前記第1プラズマ発生器は、互いに隣接して配置され、
前記第2プラズマ発生器は、互いにオフセットして配置される
成膜装置。 - 請求項1に記載の成膜装置であって、
前記照射源は、紫外線ランプである
成膜装置。 - 請求項1又は2に記載の成膜装置を用いた成膜方法であって、
前記ガス供給部から前記支持面に支持された基板上に前記原料ガスを供給することで、前記基板上にエネルギ線硬化樹脂を堆積させ、
前記照射源から前記窓部を介してエネルギ線を照射することで、前記エネルギ線硬化樹脂の硬化物層を形成し、
前記窓部に堆積したエネルギ線硬化樹脂を前記クリーニングガスで除去する
成膜方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2018226772 | 2018-12-03 | ||
JP2018226772 | 2018-12-03 | ||
PCT/JP2019/035460 WO2020115980A1 (ja) | 2018-12-03 | 2019-09-10 | 成膜装置および成膜方法 |
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JPWO2020115980A1 JPWO2020115980A1 (ja) | 2021-09-02 |
JP7117396B2 true JP7117396B2 (ja) | 2022-08-12 |
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JP2008088483A (ja) | 2006-09-29 | 2008-04-17 | Tokyo Electron Ltd | 蒸着装置およびその運転方法 |
JP2012162806A (ja) | 2001-12-12 | 2012-08-30 | Semiconductor Energy Lab Co Ltd | クリーニング方法 |
JP2013064187A (ja) | 2011-09-20 | 2013-04-11 | Ulvac Japan Ltd | 成膜装置及び成膜方法 |
JP2015529395A (ja) | 2012-08-23 | 2015-10-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Uvチャンバを洗浄するための方法及びハードウェア |
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JP2012162806A (ja) | 2001-12-12 | 2012-08-30 | Semiconductor Energy Lab Co Ltd | クリーニング方法 |
JP2008088483A (ja) | 2006-09-29 | 2008-04-17 | Tokyo Electron Ltd | 蒸着装置およびその運転方法 |
JP2013064187A (ja) | 2011-09-20 | 2013-04-11 | Ulvac Japan Ltd | 成膜装置及び成膜方法 |
JP2015529395A (ja) | 2012-08-23 | 2015-10-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Uvチャンバを洗浄するための方法及びハードウェア |
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