WO2012073908A1 - 蒸着装置および回収装置 - Google Patents
蒸着装置および回収装置 Download PDFInfo
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- WO2012073908A1 WO2012073908A1 PCT/JP2011/077433 JP2011077433W WO2012073908A1 WO 2012073908 A1 WO2012073908 A1 WO 2012073908A1 JP 2011077433 W JP2011077433 W JP 2011077433W WO 2012073908 A1 WO2012073908 A1 WO 2012073908A1
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- vapor deposition
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Definitions
- the present invention relates to a vapor deposition apparatus and a collection apparatus that can collect vapor deposition material deposited on unnecessary portions.
- flat panel displays have been used in various products and fields, and further flat panel displays are required to have larger sizes, higher image quality, and lower power consumption.
- an organic EL display device including an organic EL element using electroluminescence (hereinafter referred to as “EL”) of an organic material is an all-solid-state type, low voltage drive, and high-speed response.
- EL organic EL display device
- the organic EL display device has a configuration in which, for example, an organic EL element electrically connected to a TFT is provided on a substrate made of a glass substrate or the like provided with a TFT (thin film transistor).
- the organic EL element is a light emitting element that can emit light with high luminance by low voltage direct current drive, and has a structure in which a first electrode, an organic EL layer, and a second electrode are stacked in this order. One electrode is electrically connected to the TFT.
- the organic EL layer a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer
- a hole injection layer a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer
- a full-color organic EL display device is generally formed by arranging organic EL elements of red (R), green (G), and blue (B) as sub-pixels on a substrate, and using TFTs. Image display is performed by selectively emitting light from these organic EL elements with a desired luminance.
- At least a light emitting layer made of an organic light emitting material that emits light of each color is formed in a predetermined pattern for each organic EL element that is a light emitting element.
- a vacuum deposition method using a deposition mask called a shadow mask for example, a vacuum deposition method using a deposition mask called a shadow mask, an inkjet method, a laser transfer method, or the like can be applied.
- vacuum deposition is currently the most common method.
- a vapor deposition material placed in a heating container called a crucible or a boat is heated and sublimated to deposit a thin film of the vapor deposition material on a substrate.
- a deposition mask can be formed only in a desired region by bringing a shadow mask having only a desired region open into close contact with the substrate and performing vapor deposition through the opening of the shadow mask.
- a shutter that determines whether or not vapor deposition particles are released toward a substrate placed directly above a crucible or the like containing a vapor deposition material, and a replaceable state so that the inside of the chamber of the vapor deposition apparatus is not contaminated by the vapor deposition material
- the deposition material attached to the non-opening part of the deposition prevention plate, shadow mask, etc. installed in is all wasted.
- the material constituting the second electrode is a metal, and the unit price of the material is less expensive than the organic material constituting the organic EL layer, but the organic material constituting the organic EL layer is electrically conductive, carrier It is a special functional material having transportability, light emission characteristics, thermal and electrical stability, and its material unit price is very expensive.
- Patent Document 1 discloses a method of capturing a vapor deposition material adhering to a shutter in a storage unit by reheating and cooling with a shroud.
- Patent Document 2 discloses a method in which a vapor deposition material adhering to a shutter plate is heated and melted by a heater in the shutter and dropped into a vapor deposition source.
- the vapor deposition material adhering to the shutter can be collected and reused.
- FIG. 16 is a diagram showing a schematic configuration of the vacuum evaporation apparatus 200 described in Patent Document 3. As shown in FIG.
- the vacuum vapor deposition apparatus 200 has a vapor deposition chamber 211 in which the inside is evacuated, and an adhesion preventing plate 216 is disposed along the inner wall of the vapor deposition chamber 211.
- a substrate holder 219 for holding the substrate to be processed 220 and the vapor deposition mask member 230 is disposed at an upper position in the vapor deposition chamber 211, and the vapor deposition mask member 230 is disposed on the film formation surface side of the substrate to be processed 220. It is in a state of being overlaid at a predetermined position.
- a plurality of mask openings 310 corresponding to the vapor deposition pattern for the substrate to be processed 220 are formed in the vapor deposition mask member 230.
- shutter part 215 which can interrupt
- a vapor deposition material recovery tool 217 having a blocking wall 271 and a vapor flow discharge port 270 is arranged in the vacuum vapor deposition apparatus 200 so as to cover the vapor outlet 212a.
- a method is disclosed in which after vapor deposition is performed in a state where the divergence angle V1 of the steam flow toward is controlled, the vapor deposition material recovery tool 217 is taken out and the vapor deposition material deposited on the blocking wall 271 is recovered and reused. Yes.
- the vapor deposition material deposited other than the substrate to be processed 220 is reduced, that is, the portion is attached to the blocking wall 271 of the vapor deposition material collection tool 217, thereby efficiently collecting and reusing the vapor deposition material. It is described that it can.
- JP 2008-127642 A released on June 5, 2008
- JP 2008-223102 A published September 25, 2008
- the vapor deposition process is almost performed except for a short period of time, ie, the time when the substrate is taken in and out of the chamber and the shadow mask is in close contact with the substrate, in other words, the shutter is in an open state for most of the time.
- the deposition amount of the vapor deposition material on the portion other than the shutter is large, and the collection of only the vapor deposition material adhering to the shutter cannot efficiently collect and reuse the vapor deposition material.
- Patent Document 2 a process of completely dropping the dissolved material into the vapor deposition source (dropping depending on gravity and cannot be accelerated) is required. If a time for performing such a process is secured, the throughput of the apparatus is reduced. The problem of deteriorating arises.
- the shutter and shroud and the housing portion are provided for each evaporation source.
- the shape and size of the evaporation source vary. These members must also be designed in a shape and size suitable for each.
- the versatility of these members is reduced, resulting in an increase in apparatus cost.
- the cost of the apparatus is increased by components such as a shutter and a housing unit having a heating function.
- Patent Document 3 there is a problem that even if the amount of material adhering to other than the barrier wall and the substrate to be processed is reduced, it cannot be recovered.
- the conventional method cannot recover the vapor deposition material efficiently and at low cost.
- the present invention has been made in view of the above-described problems, and an object thereof is to provide a vapor deposition apparatus and a collection apparatus that can efficiently collect a vapor deposition material at a low cost.
- the vapor deposition apparatus of the present invention is a vapor deposition apparatus that deposits vapor deposition particles released from a vapor deposition material storage unit provided in a vapor deposition source on a substrate in a vapor deposition chamber,
- the vapor deposition particles released from the vapor deposition material storage unit in the first direction are vapor-deposited on the substrate, and the vapor deposition particles released in the second direction different from the first direction can be removed from the vapor deposition apparatus.
- the first member is vapor-deposited, and at least a part of the first member is formed by connecting a plurality of small pieces, and each of the small pieces is provided with a connecting portion capable of connecting and disassembling the small pieces. It is characterized by being.
- substrate is vapor-deposited on the 1st member which can be removed from the said vapor deposition apparatus, and several small pieces are connected to at least one part of the said 1st member.
- each of the small pieces is provided with a connecting portion that can connect and disassemble the small pieces.
- a general-purpose piece can be connected (by assembling) to produce the first member.
- the first member can be detached from the vapor deposition apparatus, and the small pieces constituting the first member can be easily disassembled.
- the first direction means a direction in which the vapor deposition particles emitted from the vapor deposition material storage unit are not blocked by the first member during the direction toward the substrate, and the second direction is Means all directions other than the first direction.
- the recovery device of the present invention heats at least one of the small piece and the storage member by storing a storage member in which a plurality of the small pieces included in the vapor deposition apparatus are stored, A sublimation unit for sublimating the vapor deposition particles deposited on the small piece and a first capture unit for capturing the sublimated vapor deposition particles are provided.
- the sublimation process of the vapor deposition particle in a sublimation part since the sublimation part and the 1st capture
- a storage member storing a plurality of small pieces on which vapor deposition particles are vaporized
- a sublimation unit that sublimates the vapor deposition particles deposited on the small piece by heating at least one of the small piece and the storage member, and a first capture unit that captures the sublimated vapor deposition particles. It is characterized by.
- the said vapor deposition apparatus is equipped in the collection
- the vapor deposition particles emitted from the vapor deposition material storage unit in the first direction are vapor deposited on the substrate, and in a second direction different from the first direction.
- the emitted vapor deposition particles are vapor-deposited on a first member that can be removed from the vapor deposition apparatus, and at least a part of the first member is formed by connecting a plurality of small pieces. It is the structure provided with the connection part which can connect and disassemble small pieces.
- the recovery device of the present invention is configured so that the small piece provided in the vapor deposition apparatus is stored in the small piece, and at least one of the small piece and the storage member is heated, thereby heating the small piece. It is the structure provided with the sublimation part which sublimates the vapor deposition particle which vapor-deposited, and the 1st capture
- the recovery device of the present invention includes the vapor deposition device, a storage member in which a plurality of small pieces on which vapor deposition particles are vapor-deposited in the vapor deposition chamber provided in the vapor deposition device, the small pieces, It is the structure provided with the sublimation part which sublimates the vapor deposition particle vapor-deposited on the said small piece by heating at least one of the said storage member, and the 1st capture
- FIG. 1 It is a figure which shows schematic structure of the vacuum evaporation system of one embodiment of this invention. It is a figure which shows the shape of the small piece used in the vacuum evaporation system of one embodiment of this invention, and its assembly method. It is a figure which shows another example of the small piece which can be used in the vacuum evaporation system of one embodiment of this invention. It is a figure which shows another example of the small piece which can be used in the vacuum evaporation system of one embodiment of this invention. It is a figure which shows a mode that the some small piece decomposed
- FIG. 1 It is a figure which shows schematic structure of the collection
- FIG. 1 It is a figure which shows schematic structure of the vacuum evaporation system by which the control board of further another embodiment of this invention is formed with the small piece. It is sectional drawing of the organic EL element which comprises the display part of the conventional organic EL display apparatus. It is the schematic diagram which showed the method of forming a pattern vapor deposition film on a board
- FIG. 13 shows a cross-sectional view of an organic EL element constituting a display unit of an organic EL display device.
- An interlayer insulating film 102, a first electrode 103, and an edge cover 104 are formed on a substrate 101 on which a thin film transistor (TFT) 100 is formed.
- TFT thin film transistor
- alkali-free glass or plastic can be used as the substrate 101.
- alkali-free glass having a thickness of 0.7 mm is used as the substrate 101.
- the interlayer insulating film 102 and the edge cover 104 a known photosensitive resin can be used.
- the photosensitive resin include acrylic resin and polyimide resin.
- a photosensitive acrylic resin is used as the interlayer insulating film 102 and the edge cover 104.
- the first electrode 103 is formed in a pattern corresponding to each pixel by photolithography and etching after an electrode material is formed by sputtering or the like.
- the first electrode 103 various conductive materials can be used, but in the case of a bottom emission type organic EL element that emits light to the substrate side, it needs to be transparent or translucent. On the other hand, in the case of a top emission type organic EL element that emits light from the side opposite to the substrate, the second electrode 107 needs to be transparent or translucent.
- the TFT is manufactured by a known method.
- the manufacture of an active matrix organic EL display device in which a TFT is formed in each pixel will be described.
- the present invention is not limited to this, and the present invention also applies to a passive matrix organic EL display device without a TFT. Is applicable.
- the edge cover 104 is formed so as to cover the end portion of the first electrode 103 in order to prevent the organic EL layer from becoming thin at the end portion of the first electrode 103 and short-circuiting with the second electrode 107.
- the first electrode 103 is exposed at a portion where the edge cover 104 is not provided. This exposed portion becomes a light emitting portion of each pixel.
- Each organic EL layer is formed on the first electrode 103.
- the organic EL layer include a hole injection layer and a hole transport layer 105, a light emitting layer (106R / 106G / 106B), an electron transport layer formed in the same shape as the second electrode 107, although not shown in the figure. Examples thereof include an electron injection layer.
- a carrier blocking layer for blocking the flow of carriers such as holes and electrons may be inserted as necessary.
- One layer may have a plurality of functions. For example, one layer serving as both a hole injection layer and a hole transport layer may be formed.
- the first electrode 103 is an anode, and from the first electrode 103 side, a hole injection layer / hole transport layer 105, a light emitting layer (106R / 106G / 106B), an electron transport layer (not shown), an electron An injection layer (not shown) and the second electrode 107 were stacked in this order as a cathode.
- the order of stacking is reversed.
- a bottom emission organic EL element is used, and ITO (indium-tin oxide) is used as the first electrode 103.
- ITO indium-tin oxide
- a known material can be used as the material of the organic EL layer.
- the light emitting layer (106R / 106G / 106B) may be a single material or a mixed type in which a certain material is used as a host material and another material is mixed as a guest material or a dopant.
- the light emitting layers (106R, 106G, 106B) are formed using a single material.
- FIG. 14 is a schematic view showing a method of forming a pattern vapor deposition film on a substrate by vacuum vapor deposition.
- the vapor deposition material is heated and sublimated by the vapor deposition source 120.
- the sublimated vapor deposition particles reach the substrate 101 on which the first electrode 103 shown in FIG. 13 is formed through the shadow mask 110 having the opening 110a at a desired position.
- the shadow mask 110 is in close contact with the substrate 101. As a result, a vapor deposition film is formed at a desired position on the substrate 101.
- the film is formed on the entire surface of the display unit, only the entire region of the display unit and the region where film formation is required are opened.
- the film is formed using the open mask as the shadow mask 110.
- the film is formed using the fine mask having an opening only in the portion as the shadow mask 110.
- FIG. 15 shows the manufacturing process of the organic EL display device.
- the substrate 101 having the first electrode 103 formed on the TFT substrate is manufactured (S1).
- a hole injection layer / hole transport layer 105 is formed on the entire surface of the substrate 101 by vacuum deposition (S2, S3).
- the light emitting layer (106R / 106G / 106B) is formed at a predetermined location by vacuum deposition (S4).
- an electron transport layer, an electron injection layer, and the second electrode 107 are formed in this order by vacuum deposition (S5, S6, S7).
- the region (display unit) of the organic EL element is sealed with respect to the substrate on which the vapor deposition has been completed so that the organic EL element is not deteriorated by moisture or oxygen in the atmosphere (S8).
- Sealing includes a method of forming a film that is difficult to transmit moisture and oxygen by a CVD method or the like, and a method of bonding a glass substrate or the like with an adhesive or the like.
- an organic EL display device is manufactured, and a desired display can be performed by causing a current to flow from the driving circuit formed outside to the organic EL element in each pixel to emit light.
- FIG. 1 is a diagram showing a schematic configuration of the vacuum vapor deposition apparatus 1.
- a vapor deposition material storage unit 2 provided in the vapor deposition source 13, a deposition plate 3 and a shutter 4 are arranged.
- the deposition material storage unit 2 is only one in the vacuum chamber 5, and the deposition preventing plate 3 prevents other components in the chamber 5 from being contaminated by deposition particles.
- the shutter 4 is used when vapor deposition is unnecessary (for example, a time until a stable vapor deposition rate is obtained, a time until the substrate 101 is not present or until the substrate 101 and the shadow mask 110 are aligned and brought into close contact with each other). ) Prevents the vapor deposition particles from being released (injected) into the vacuum chamber 5. That is, it serves to open or shield the discharge port 6 of the deposition preventing plate 3.
- the deposition preventing plate 3 and the shutter 4 are each constituted by assembling small pieces 3a, 3b, 4a, and 4b having a substantially rectangular shape.
- the sizes of the small pieces 3a, 3b, 4a, and 4b are about 10 cm on one side, 5 to 10 cm on the other side, and the plate thickness is about 1 mm.
- a plurality of these small pieces 3a, 3b, 4a, and 4b are used to assemble them into a desired overall shape. Further, the small pieces 3a, 3b, 4a, and 4b are not in contact with each other so that a void is generated between the small pieces 3a, 3b, 4a, and 4b, and the vapor deposition particles do not pass through the gaps to contaminate other components in the vacuum chamber 5. It is assembled so that there is no gap.
- stainless steel is used as the material of the small pieces 3a, 3b, 4a, and 4b.
- the small pieces 3a, 3b, 4a, and 4b are formed in the shape shown in FIG. 2 below.
- the present invention is not limited to this. Can take shape and size. Moreover, the thing in which some of the sides are curved may be used.
- FIG. 2 shows a method used in the present embodiment.
- the small pieces 3a, 3b, 4a, and 4b are substantially square, but the corners are notched and have an octagonal shape.
- a female member having a hole (connecting portion) as shown in FIG. 2 (a) and a male member having a protruding portion (connecting portion) as shown in FIG. 2 (b) are as shown in FIG. 2 (c). By assembling, the assembly is performed.
- the members can be assembled without interfering with each other.
- the vacuum deposition apparatus 1 provided with the shutter 4 together with the deposition preventing plate 3 has been described as an example.
- the present invention can also be applied to a configuration in which the shutter 4 is not provided. .
- the entire deposition preventing plate 3 and shutter 4 are constituted by small pieces 3a, 3b, 4a, and 4b, but only a part thereof is constituted by small pieces 3a, 3b, 4a, and 4b. May be.
- each of the small pieces 3a, 3b, 4a, and 4b is provided with a connecting portion that can connect and disassemble the small pieces.
- FIG. 3 shows another example of a small piece that can be used in the present embodiment.
- each small piece is a quadrangle and is folded on four sides.
- the folded sides of the two opposite sides are the same, and the other two sides are folded to the opposite side.
- the numbers on the small pieces in the figure indicate the layer numbers.
- the bottom number is the 0th layer, and the layer numbers increase toward the front of the page.
- FIG. 3 (d) shows an A-A 'cross section
- FIG. 3 (e) shows a B-B' cross section.
- the numbers shown in the figure are the layer numbers described above.
- a gap is generated between the third layer and the zeroth layer, as seen in FIG. 3D.
- the vapor deposition flow of the vapor deposition material released from the vapor deposition material storage portion is arranged so as not to pass through this gap.
- the vapor deposition material passes through the gap by devising the position of the gap and the arrangement of the vapor deposition source so that there is no flight of vapor deposition particles that can pass through the gap, as indicated by the dashed-dotted arrows in the figure. Rather, it is captured by the components assembled in small pieces.
- this gap can be adjusted according to the plate thickness of the small piece and the length of folding. For example, by reducing the thickness of the small piece, the width of the gap can be made smaller, or by increasing the folding length (enhancing the meshing range), the incident angle of the deposited particles can be further limited. can do.
- FIG. 4 shows still another example of a small piece that can be used in the present embodiment.
- the small piece is a quadrangle and the four sides are folded into an L shape.
- the L-shaped portion is omitted from the corner as shown in FIGS. 4 (a) and 4 (b).
- assembly is performed by engaging the back and front as a pair.
- the L-shaped part is omitted at the corners, it is possible to assemble the components without interfering with each of the small pieces, and at the same time, the voids through which the vapor deposition particles can pass due to the overlapping of the small pieces at the meshing part and the corner part Is missing.
- the small piece does not come off naturally and the component does not break down into small pieces.
- a protrusion or a bowl-shaped structure can be added to the L-shape portion as appropriate.
- SUS is used as the material of the small pieces 3a, 3b, 4a, and 4b.
- the present invention is not limited to this, and it goes without saying that any material can be selected within the scope to which the present invention can be applied.
- a vacuum vapor deposition device is prepared, and the deposition plate 3 and the shutter 4 using the small pieces 3a, 3b, 4a, and 4b are provided. This was applied only in the vacuum deposition apparatus 1 for forming the hole injection layer / hole transport layer.
- the deposition preventing plate 3 and the shutter 4 using the small pieces 3a, 3b, 4a, and 4b may be applied to other than the vacuum chamber of the vacuum deposition apparatus 1 that forms the hole injection layer / hole transport layer.
- the material as the deposition material was deposited on the deposition preventing plate 3 and the shutter 4. .
- the vacuum chamber 5 for forming the hole injection layer / hole transport layer is opened to the atmosphere, and the deposition preventing plate 3 and the shutter 4 to which the vapor deposition material is adhered are disassembled into individual pieces 3a, 3b, 4a, and 4b and taken out. It was.
- FIG. 5 is a diagram showing a state in which a plurality of disassembled small pieces 3a, 3b, 4a, and 4b are arranged and stored in the stocker 7.
- the stocker 7 has a box shape, and a plurality of disassembled small pieces 3a, 3b, 4a, and 4b can be inserted and fixed.
- the stocker 7 has an inner size of 10 cm in height, 10.5 cm in width, and 50 cm in length, and has grooves formed so that small pieces can be arranged in the length direction at a pitch of 3 mm.
- the stocker 7 has an inner size of 10 cm in height, 10.5 cm in width, and 50 cm in length, and has grooves formed so that small pieces can be arranged in the length direction at a pitch of 3 mm.
- it is not limited to this.
- FIG. 6 is a diagram showing a schematic configuration of the recovery apparatus 10 that recovers the vapor deposition material adhering to the small pieces 3a, 3b, 4a, and 4b.
- the recovery device 10 includes a resublimation chamber (sublimation unit) 11, a storage chamber 12, and a vapor deposition source 13 provided in the vacuum vapor deposition device 1 shown in FIG.
- the storage chamber 12 and the storage chamber 12 and the vapor deposition source 13 are connected by pipes 15 and 16 that can be opened and closed.
- FIG. 6 only the vapor deposition source 13 of the vacuum vapor deposition apparatus 1 shown in FIG. 1 is illustrated, but the recovery apparatus 10 is formed integrally with the vacuum vapor deposition apparatus 1.
- the stocker 7 storing the small pieces 3a, 3b, 4a, and 4b is then placed in the resublimation chamber 11.
- the resublimation chamber 11 can be evacuated to a degree of vacuum of about 10 ⁇ 5 Pa, and the temperature of the inner wall can be adjusted to a temperature at which the material does not adhere.
- the stocker 7 is provided with a heater 14, and the stocker 7 and the small pieces 3a, 3b, 4a, and 4b are heated by the heater 14 in a state where the sublimation chamber 11 is evacuated.
- the resublimation chamber 11 is connected with a temperature-adjustable storage chamber 12 via a pipe 15, and the storage chamber 12 is further connected to a vapor deposition source 13.
- the pipes 15 and 16 can be opened and closed, and the temperature can be adjusted.
- the temperature of the storage chamber 12 is adjusted to a temperature at which the vapor deposition material sublimated again from the small pieces 3 a, 3 b, 4 a, and 4 b reattaches to the surface of the storage chamber 12.
- the stocker 7 and the small pieces 3a, 3b, 4a, and 4b are heated by the heater 14, and the temperature is increased to a temperature at which the hole injection layer / hole transport layer material attached to the small pieces 3a, 3b, 4a, and 4b is sublimated.
- the inner wall of the resublimation chamber 11 is at a temperature at which the vapor deposition material does not adhere, the vapor deposition material did not adhere.
- an inert gas is used so as not to react with the sublimated vapor deposition material.
- Ar gas is used as the carrier gas.
- the carrier gas may be circulated. As a result, the vapor deposition material that cannot be captured in the storage chamber 12 but has flowed away with the carrier gas can be taken into the storage chamber 12 again.
- Ar gas is flowed at a flow rate of 30 sccm.
- the inner wall of the storage chamber 12 is adjusted to a temperature at which the vapor deposition material adheres, the vapor deposition material adheres again within the storage chamber 12. In this way, all the vapor deposition materials were transferred from the small pieces 3a, 3b, 4a, and 4b to the storage chamber 12.
- the pipe 16 between the storage chamber 12 and the vapor deposition source 13 is opened, and the inner wall temperature of the storage chamber 12 is made higher than the temperature at which the vapor deposition material adheres.
- the temperature of the vapor deposition material container was set to a temperature at which the vapor deposition material adhered. Accordingly, the vapor deposition material is transferred from the storage chamber 12 to the vapor deposition source 13 in the same manner as the vapor deposition material is transferred from the small pieces 3a, 3b, 4a, and 4b of the resublimation chamber 11 to the storage chamber 12. All of the deposition material was transferred.
- the hole injection layer / hole transport layer material adhering to the deposition preventing plate 3 and the shutter 4 could be recovered and reused.
- an organic EL vapor deposition apparatus equipped with a recovery apparatus 10 that recovers and reuses through such a process an organic EL display apparatus with high material utilization efficiency could be produced.
- the method of the present invention is applied to the hole transport layer / hole injection layer material.
- the present invention is not limited to this, and the present invention can also be used for other single material layers.
- it can be applied to a metal material constituting the second electrode 107, the stocker 7, the small pieces 3a, 3b, 4a and 4b, the resublimation chamber 11, the pipes 15 and 16, the housing chamber 12 and the like are made of metal. It is necessary to make the material capable of withstanding the temperature at which the material sublimates, which is not advantageous as an apparatus cost. Therefore, it is desirable to apply to an organic material having a sublimation temperature lower than that of a metal material.
- the stocker 7 is heated by the heater 14, but not limited to this, the stocker 7 and the small pieces 3 a, 3 b, 4 a, 4 b are heated by heating the inner wall of the sublimation chamber 11. May be. In that case, since the temperature of the resublimation chamber 11 is at least higher than the temperature at which the vapor deposition material that has been sublimated adheres, there is no need to separately adjust the temperature of the resublimation chamber 11.
- the deposition preventing plate 3 and the shutter 4 are configured by the small pieces 3a, 3b, 4a, and 4b whose shape and size are limited, the shape and size of the vacuum chamber 5 are not limited.
- the anti-adhesion plate 3 and the shutter 4 having any shape and size can be constituted by the small pieces 3a, 3b, 4a, and 4b.
- the manufacturing cost of the vacuum evaporation apparatus 1 used for manufacturing the organic EL can be reduced.
- adhesion prevention board 3 and the shutter 4 were comprised by the small pieces 3a * 3b * 4a * 4b, it is applicable not only to this but another structure.
- the common stocker 7 can be used, and the size of the resublimation chamber 11 is also the shape of the vacuum chamber 5. It can be made common regardless of size.
- the manufacturing cost of the vacuum vapor deposition apparatus 1 and the recovery apparatus 10 used for manufacturing the organic EL can be reduced as compared with the case where the deposition plate and the shutter having an arbitrary shape and size are used.
- the storage chamber 12 since the storage chamber 12 was installed, the storage chamber 12 does not necessarily need to be installed.
- the operation timing of the resublimation chamber 11 and the operation timing of the vapor deposition source 13 can be separated.
- the material adhering to the small pieces 3 a, 3 b, 4 a, 4 b depending on the time of vapor deposition is mixed in the storage chamber 12.
- the characteristic variation can be averaged.
- the impurities sublimated together with the vapor deposition material in the resublimation chamber 11 can be captured in the storage chamber 12 so as not to reach the vapor deposition source 13.
- the accommodation chamber 12 be provided.
- the resublimation chamber 11 in which the stocker 7 storing the small pieces 3a, 3b, 4a, and 4b is installed is connected to the vapor deposition source 13 of the vacuum vapor deposition apparatus 1 through the storage chamber 12 or directly. Although an example was shown, it is not connected to the vapor deposition source 13 of the vacuum vapor deposition apparatus 1, and each may be independent.
- a recovery device (sublimation purification device) 10 a including the resublimation chamber 11 and the storage chamber 12 can be provided independently of the vacuum vapor deposition device 1. Also in this case, the effect of the present invention as shown in the first embodiment can be obtained.
- FIG. 7 shows a recovery device 10a which is a modification of the first embodiment. 7 is the same as the configuration of only the sublimation chamber 11 and the storage chamber 12 in FIG. 6, and for convenience of explanation, members having the same functions as those shown in the drawings of the first embodiment are the same. Reference numerals are assigned and explanations thereof are omitted.
- the temperature rise of the material often depends on the thermal conductivity of the material itself.
- the material near the surface of the container may be excessively heated to cause thermal decomposition. To avoid this, an extra device such as a stirrer is required.
- the recovery device (sublimation purification device) 10a as in this modification, the vapor deposition particles that are thinly attached to the surface of the small pieces 3a, 3b, 4a, and 4b are efficiently transferred by heat conduction from the small pieces 3a, 3b, 4a, and 4b. Since it can be heated well, there are few parts depending on the thermal conductivity of the material itself, and it is not necessary to provide an overheat prevention device such as a stirrer. Therefore, the structure of the recovery device (sublimation purification device) 10a can be simplified, and the device cost can be reduced and the size can be reduced.
- the storage chamber 12 may be provided with a vapor deposition material recovery container (for example, a crucible or a boat) that can be stored in the vapor deposition material storage unit 2 provided in the vapor deposition source 13 of the vacuum vapor deposition apparatus 1.
- a vapor deposition material recovery container for example, a crucible or a boat
- the vapor deposition material collection container from which the vapor deposition material has been collected can be stored in the vapor deposition material storage unit 2 provided in the vacuum vapor deposition apparatus 1 and used as it is.
- FIG. 8 is a diagram showing a schematic configuration of the recovery apparatus 10b.
- the deposition plate and the shutter were assembled by assembling small pieces in the vacuum chamber of the vacuum deposition apparatus for forming the hole injection layer / hole transport layer material.
- the shape and size of the small piece are the same as those in the first embodiment, but the material of the small piece is tantalum (Ta) in the present embodiment.
- the deposition plate and shutter with the material adhered thereto were disassembled into small pieces, stored in a stocker 7a made of the same tantalum material as the small pieces, and placed in the resublimation chamber 11.
- the stocker 7a and the small piece are connected to a power source 17 so that electricity can be supplied from outside the vacuum chamber.
- the stocker 7a After reducing the sublimation chamber 11 to a vacuum degree of 10 ⁇ 5 Pa, the stocker 7a was energized. At the same time, the small piece was energized, and the temperature of the stocker 7a and the small piece rose to the sublimation temperature of the material adhering to the small piece by Joule heat. As a result, the vapor deposition material sublimated and desorbed from the small piece.
- the vapor deposition material adhering to the deposition plate and the shutter can be collected and reused, so that it is possible to realize the vacuum vapor deposition apparatus 1 and the collection apparatus 10b with high material utilization efficiency that can be used as an organic EL manufacturing apparatus. As a result, a low-cost organic EL display device can be realized.
- the stocker 7a and the small pieces are conductive, they can be directly heated by Joule heat by energization, and the temperature of the small pieces can be increased efficiently. Therefore, the vapor deposition material can be collected and reused with less energy, and as a result, it can contribute to lowering the manufacturing cost of the organic EL display device.
- the stocker 7a and the small pieces are conductive.
- the present invention is not limited to this, and only the stocker 7a may be conductive. In that case, the stocker 7a is heated by Joule heat by energization, and the small piece is heated by heat transfer.
- only the small piece may be conductive. In that case, it is necessary to make electrical connection to each small piece so that the small piece can be directly energized. Considering the ease of electrical connection and the energy efficiency of the temperature rise of the small piece, it is preferable that both the stocker 7a and the small piece are conductive.
- the stocker 7a and the small piece material are tantalum (Ta).
- the present invention is not limited to this, and it has a function of generating Joule heat by energization and thereby sublimating the vapor deposition material attached to the small piece. As long as various materials can be used.
- Embodiment 3 Next, a third embodiment of the present invention will be described based on FIG. 9 and FIG.
- the present embodiment is different from the first and second embodiments in that a mechanism capable of separating and recovering the mixed vapor deposition material is provided in the recovery apparatus, and other configurations are the same as those of the first embodiment.
- a mechanism capable of separating and recovering the mixed vapor deposition material is provided in the recovery apparatus, and other configurations are the same as those of the first embodiment.
- members having the same functions as those shown in the drawings of Embodiments 1 and 2 are given the same reference numerals, and descriptions thereof are omitted.
- FIG. 9 is a diagram showing a schematic configuration of the vacuum vapor deposition apparatus 1a.
- a vapor deposition material storage unit 2a provided in the vapor deposition source 13a and a vapor deposition material storage unit 2b provided in the vapor deposition source 13b are disposed.
- a landing plate 3 and a shutter 4 are arranged.
- an adhesion preventing plate 3 for the entire inside of the vacuum chamber 5a is also provided.
- the deposition preventing plate 3 and the shutter 4 are configured by assembling the small pieces 3a, 3b, 4a, and 4b as described above.
- a light emitting layer was formed on the substrate 101 using the vacuum deposition apparatus 1a. Specifically, the material was formed on the TFT substrate in the vacuum chamber 5 of the vacuum deposition apparatus 1 shown in FIG. 1 for forming the hole injection layer / hole transport layer.
- a light emitting layer composed of two types of a host material and a guest material was formed in the vacuum chamber 5a of the vacuum deposition apparatus 1a for forming the light emitting layer.
- the material 2 is formed on the substrate 101.
- a film made of a mixture of types was prepared.
- the guest material can emit light with high efficiency by receiving energy from the host material.
- the electron transport layer, the electron injection layer, and the second electrode were formed into a film in a vacuum chamber of another vacuum deposition apparatus and sealed to produce an organic EL display device.
- FIG. 10 is a diagram showing a schematic configuration of the recovery apparatus 10c.
- the vacuum chamber 5a was opened, the deposition preventing plate 3 and the shutter 4 were disassembled into small pieces 3a, 3b, 4a, and 4b, stored in the stocker 7, and then put into the resublimation chamber 11 as shown in FIG. .
- the stocker 7 and the resublimation chamber 11 are the same as those in the first embodiment, and the storage chambers 12a and 12b correspond to the vapor deposition material storage portion 2a provided in the vapor deposition source 13a and the vapor deposition material storage portion 2b provided in the vapor deposition source 13b. Are provided.
- a separation chamber 18 provided with a plurality of inner walls 18a in a lever state is provided.
- the separation chamber 18 has an inner wall 18a that can be adjusted to at least a temperature at which the vapor deposition material can sublime.
- the mixed vapor deposition material was separated and collected by the following procedure.
- the small pieces 3a, 3b, 4a, and 4b in the stocker 7 were raised to a temperature at which the two kinds of vapor deposition materials were sublimated together.
- the inner wall temperature of the resublimation chamber 11 is maintained at a temperature at which both materials do not adhere.
- the pipe 20 connecting the resublimation chamber 11 and the separation chamber 18 was opened, and the sublimated material was guided to the separation chamber 18.
- the plurality of inner walls 18a in the separation chamber 18 are maintained at such a temperature that the material with the higher sublimation temperature adheres and the other does not adhere.
- the guest material since the sublimation temperature of the guest material is higher than that of the host material, the guest material adheres to the inner wall 18a of the separation chamber 18, but the host material does not adhere.
- the host material Since the host material does not adhere to the inner wall 18a of the separation chamber 18, it passes through the separation chamber 18 as it is and flows into the storage chamber 12a. Since the storage chamber 12a is set to a temperature at which the host material adheres, the host material was eventually collected in the storage chamber 12a.
- the pipe 19a between the separation chamber 18 and the storage chamber 12a was closed. If the transfer of the guest material from the resublimation chamber 11 to the separation chamber 18 has been completed, the pipe 20 connecting the resublimation chamber 11 and the separation chamber 18 is also closed.
- the temperature of the inner wall 18a of the separation chamber 18 was raised to a temperature at which the guest material sublimates.
- the pipe 19b connecting the separation chamber 18 and the storage chamber 12b was opened. Thereby, the sublimated guest material flows into the storage chamber 12b. Since the temperature of the storage chamber 12b is set to a temperature at which the guest material adheres, the guest material was collected in the storage chamber 12b.
- the host material and the guest material could be separated and collected in the storage chamber 12a and the storage chamber 12b by the above process.
- the material utilization efficiency can be further improved compared to the case of collecting and reusing a small piece to which only a single material is attached.
- the present invention is not limited to this, and three or more kinds of materials are mixed. Even if it adheres to a small piece, the method of the present invention can be applied.
- a storage chamber is provided and connected to the separation chamber, and the difference in sublimation temperature of each vapor deposition material is utilized so that only one type of material does not adhere to the inner wall of the separation chamber.
- the temperature of the inner wall of the separation chamber By adjusting the temperature of the inner wall of the separation chamber, one kind of vapor deposition material can be taken out from the separation chamber and guided and collected in a specific storage chamber. By sequentially repeating this procedure, it is possible to cope with three or more mixed states.
- the plurality of inner walls 18a are arranged in the levered state in the separation chamber 18.
- the present invention is not limited to this, and the structure of the separation chamber can be various. For example, a large number of mesh filters may be arranged in the separation chamber, and the material to be adhered may be adhered to these filters.
- the piping port from the resublimation chamber to the storage chamber is not provided in the separation chamber. It is desirable that the straight line connecting the piping port always meets the structure.
- the method of constructing the plurality of inner walls 18a in the lever state as shown in the drawing is effective for easily realizing the above conditions.
- the separation chamber 18 is provided and the mixed vapor deposition material is separated.
- the present invention is not limited to this, and the separation chamber 18 is provided with the function of the separation chamber 18 to the resublimation chamber 11 and the stocker 7. It is possible that 18 is not provided. In that case, by adjusting the temperature of the resublimation chamber 11 or the stocker 7 or both, a state in which only one kind of vapor deposition material is sublimated is generated, and the sublimated material is stored in a specific storage chamber. You can collect at.
- the separation chamber 18 is separately provided. It is preferable to provide it.
- the mixing ratio of the mixed material adhering to the deposition preventing plate 3 and the shutter 4 is assumed to vary depending on the installation position and function of the component, the stocker 7 is mixed with the small pieces constituting them.
- the substrate is stored in the sublimation chamber 11 and sublimated in the resublimation chamber 11, there is a possibility that the mixture ratio of the obtained recovered material is different from the mixture ratio used at the time of deposition of the substrate.
- a vapor deposition source that separately releases a single material is prepared, the amount of emission is adjusted according to the emission from the vapor deposition source for mixed materials, and co-evaporation is performed, so that vapor deposition having a desired mixing ratio is achieved.
- a film can be formed on the substrate.
- the mixed vapor deposition material can be recovered and reused.
- FIG. 4 a fourth embodiment of the present invention will be described based on FIG.
- the present embodiment is different from the first to third embodiments in that it does not have a re-sublimation chamber connected from the outside but has a vapor deposition source 13c that can store the stocker 7 instead.
- Other configurations are the same as those described in the first to third embodiments.
- members having the same functions as those shown in the drawings of Embodiments 1 to 3 are given the same reference numerals, and descriptions thereof are omitted.
- FIG. 11 is a diagram showing a schematic configuration of the vacuum vapor deposition apparatus 1b.
- the vacuum vapor deposition apparatus 1b has a vapor deposition source 13c in which the stocker 7 can be stored.
- a nozzle port 21 is provided in the vapor deposition material storage unit 2 c, and the vapor deposition material is discharged from the nozzle port 21 toward the deposition target substrate 101.
- the deposition preventing plate 3 and the shutter 4 to which the vapor deposition material is adhered are disassembled into small pieces 3a, 3b, 4a, and 4b and stored in the stocker 7.
- the stocker 7 is installed in the vapor deposition source 13c.
- the stocker 7 and the small pieces 3a, 3b, 4a, and 4b are heated, and the vapor deposition material sublimated in the vapor deposition material storage portion 2c passes through the nozzle port 21 and is vacuumed. Released into the chamber 5.
- the temperature rise of the material often depends on the thermal conductivity of the material itself.
- the material near the surface of the container is excessively heated and may cause thermal decomposition, and in order to avoid this, the heating temperature could not be increased.
- the higher the heating temperature the higher the vapor deposition rate.
- the heating temperature cannot be increased for the reasons described above, it is difficult to obtain a high vapor deposition rate.
- the material thinly attached to the surface of the small pieces 3a, 3b, 4a, and 4b can be efficiently heated by heat conduction from the small pieces 3a, 3b, 4a, and 4b. There are few parts depending on thermal conductivity, and the heating temperature can be increased.
- the deposition rate can be further increased.
- the occurrence of thermal decomposition of the vapor deposition material can be further suppressed.
- the vapor deposition material storage unit 2c having one nozzle port 21 is used.
- the present invention is not limited to this, and a vapor deposition material storage unit having a plurality of nozzle ports or having slit ports is used. May be.
- the amount of material sublimated in the deposition material storage unit and released through each nozzle port or slit port is set.
- a uniform method is mentioned.
- the recovery and reuse of the vapor deposition material can be performed simultaneously without separation.
- FIG. 12 is a diagram showing a schematic configuration of a vacuum deposition apparatus 1c in which the control plate 22 is formed of small pieces 22a and 22b.
- a plurality of control plates 22 provided between the vapor deposition material storage portion 2d and the vapor deposition mask 110 receive vapor deposition particles incident on the space 23 between the control plates. Since the trapping is selectively performed according to the incident angle, only the vapor deposition particles having a predetermined incident angle or less are incident on the opening of the mask 110.
- control plate 22 is formed by assembling the small pieces 22a and 22b used in the first embodiment.
- the vapor deposition material adhering to these small pieces can be collected by the above-described method, and a vacuum vapor deposition apparatus 1c that can collect the vapor deposition material efficiently and at low cost can be realized.
- the method of the present invention uses a vacuum deposition method, and various other productions having the purpose of efficiently and simply collecting and reusing the deposited material attached to the components in the vacuum chamber.
- the present invention can be applied to an apparatus and a product using the apparatus.
- vapor deposition apparatus of the present invention during a predetermined period, at least vapor deposition particles emitted in the first direction from the vapor deposition material storage unit are provided between the vapor deposition material storage unit and the substrate, and the vapor deposition is performed. It is preferable that vapor deposition is performed on a second member that can be removed from the apparatus, and at least a part of the second member is formed by connecting a plurality of small pieces.
- the second member for example, at least a part of the shutter portion is also formed by connecting the plurality of small pieces.
- the second member can be detached from the vapor deposition apparatus, and the small pieces constituting the second member can be easily disassembled.
- the first member may be a deposition plate for preventing the vapor deposition chamber from being contaminated by the vapor deposition particles.
- the first member is provided between the substrate and the opening through which the vapor deposition particles are discharged from the vapor deposition material storage unit, and is orthogonal to the normal direction of the substrate.
- a plurality of control plates may be formed along the direction at predetermined intervals so as to sandwich the opening.
- At least a part of the deposition preventive plate and the control plate that are assumed to deposit a relatively large amount of the vapor deposition particles are formed by connecting the plurality of small pieces.
- the vapor deposition source is formed so as to be capable of storing a storage member in which a plurality of the small pieces are stored.
- a plurality of small pieces on which a large amount of vapor deposition material is vapor-deposited by the storage member can be heated at one time, and the vapor deposition material to be collected and reused can be easily sublimated.
- the vapor deposition source provided in the vapor deposition apparatus is formed so as to be capable of storing a storage member in which a plurality of small pieces on which the vapor deposition material is vapor deposited is stored, material recovery and reuse can be performed simultaneously.
- the first capturing part is connected to a vapor deposition material storage part provided in the vapor deposition apparatus, and is heated at a temperature equal to or higher than the sublimation temperature of the vapor deposition particles captured by the first capturing part. It is preferable to supply the trapped vapor deposition particles to the vapor deposition material storage unit.
- the sublimation process of the vapor deposition particles in the sublimation part since the sublimation part and the first capturing part are provided, and the first capturing part is connected to the vapor deposition material storage part, the sublimation process of the vapor deposition particles in the sublimation part;
- the step of capturing the sublimated vapor deposition particles in the first capture unit and the step of supplying the vapor deposition particles captured in the first capture unit to the vapor deposition material storage unit can be separated and recovered.
- the throughput of the apparatus can be improved.
- acquisition part can be supplied as it is to the vapor deposition material storage part with which the said vapor deposition apparatus was equipped, vapor deposition material can be collect
- a recovery device can be realized.
- the first capturing unit may be the vapor deposition source.
- the process time of supplying the trapped vapor deposition particles from the first trapping unit to the vapor deposition source can be omitted, so that the throughput of the recovery device can be further improved.
- the first capturing unit includes a vapor deposition material recovery container that can be stored in a vapor deposition material storage unit provided in a vapor deposition source of the vapor deposition device.
- the trapped vapor deposition particles are preferably recovered.
- the first capturing unit includes the vapor deposition material recovery container that can be stored in the vapor deposition material storage unit, and the captured vapor deposition particles are recovered in the vapor deposition material recovery container. It has become.
- the vapor deposition material collection container from which the vapor deposition material is collected can be stored in the vapor deposition material storage unit provided in the vapor deposition apparatus and used as it is, the throughput of the collection apparatus can be improved.
- At least one of the small piece and the storage member is formed of a conductive material, and is heated by Joule heat by energization to sublimate the vapor deposition particles deposited on the small piece. preferable.
- the small piece and the storage member are disposed in the sublimation part, and the vapor deposition particles deposited on the small piece are sublimated by heating the wall surface of the sublimation part.
- the wall surface of the sublimation part is a temperature at which only one type of vapor deposition particles vapor-deposited on the small piece is sublimated. It is preferable to be heated.
- At least two different kinds of vapor deposition particles are vapor-deposited on the small piece, and at least one of the small piece and the storage member has only one kind of vapor deposition particles vapor-deposited on the small piece. It is preferably heated to a temperature to be sublimated.
- the recovery device of the present invention at least two types of different vapor deposition particles are deposited on the small piece, and a separation unit is provided between the sublimation unit and the first capturing unit,
- the separation part has a plurality of inner walls capable of adjusting the temperature in contact with at least two different vapor deposition particles sublimated in the sublimation part, and the temperature of the inner wall is at least two different vapor deposition particles sublimated.
- the sublimation temperature is set at the lowest temperature or higher and lower than the second lowest temperature, and the at least two different kinds of vapor deposition particles sublimated in the sublimation part are connected to the first through the separation part. It is preferable to be supplied to the capturing part.
- the vapor deposition particles can be effectively separated and recovered using the separation unit even in a state where a plurality of types of vapor deposition particles are sublimated in the sublimation chamber.
- the inner wall temperature of the separation part is set by setting the temperature of the inner wall to be equal to or higher than the second lowest temperature. It is preferable that the vapor deposition particles deposited on are sublimated and supplied to a second trapping unit different from the first trapping unit.
- the temperature of the inner wall is set to two or more kinds of vapor deposition particles vapor deposited on the inner wall of the separation part.
- the sublimation temperature is set to the lowest temperature or higher and lower than the second lowest temperature, only one type of vapor deposition particles is sublimated in the two or more types of vapor deposition particles deposited on the inner wall of the separation part. It is preferable to be supplied to a second capturing unit different from the one capturing unit.
- the vapor deposition particles deposited on the separation unit can be separated and recovered effectively.
- the present invention can be applied to a vapor deposition apparatus or a collection apparatus that collects a vapor deposition material.
- Vacuum deposition equipment 1 Vapor deposition material storage 3 Deposition plate 3a / 3b Small piece 4 Shutter 4a / 4b Small piece 5, 5a Vacuum chamber (deposition chamber) 7, 7a Stocker (storage member) 10, 10a, 10b, 10c Sublimation purification equipment (recovery equipment) 11 Re-sublimation room (sublimation section) 12, 12a, 12b Storage chamber (capturing part) 13, 13a, 13b, 13c Deposition source 14 Heater 15 Piping 16, 16a, 16b Piping 17 Power supply 18 Separation chamber (separation part) 18a Inner wall 19a / 19b Piping 20 Piping 21 Nozzle port (opening) 22 Control board 22a, 22b Small piece 101 Substrate 110 Shadow mask
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Abstract
Description
図13は、有機EL表示装置の表示部を構成する有機EL素子の断面図を示したものである。
(変形例1)
上述した回収装置においては、小片3a・3b・4a・4bを格納したストッカ7を設置する再昇華室11が収容室12を介してあるいは直接、真空蒸着装置1の蒸着源13に接続されている例を示したが、真空蒸着装置1の蒸着源13に接続されておらず、各々が独立していてもよい。
次に、図8に基づいて、本発明の第2の実施形態について説明する。本実施の形態においては、小片(未図示)およびストッカ7aの少なくとも一方は、導電性を有しており、通電することで加熱できるようになっている点において実施の形態1とは異なっており、その他の構成については実施の形態1において説明したとおりである。説明の便宜上、上記の実施の形態1の図面に示した部材と同じ機能を有する部材については、同じ符号を付し、その説明を省略する。
次に、図9および図10に基づいて、本発明の第3の実施形態について説明する。本実施の形態においては、混合された蒸着材料を分離、回収し得る機構が回収装置内に設けられている点において実施の形態1および2とは異なっており、その他の構成については実施の形態1および2において説明したとおりである。説明の便宜上、上記の実施の形態1および2の図面に示した部材と同じ機能を有する部材については、同じ符号を付し、その説明を省略する。
次に、図11に基づいて、本発明の第4の実施形態について説明する。本実施の形態においては、外部から接続された再昇華室を有しておらず、代わりにストッカ7を格納できる蒸着源13cを有している点において実施の形態1から3とは異なっており、その他の構成については実施の形態1から3において説明したとおりである。説明の便宜上、上記の実施の形態1から3の図面に示した部材と同じ機能を有する部材については、同じ符号を付し、その説明を省略する。
次に、図12に基づいて、本発明の第5の実施形態について説明する。本実施の形態においては、真空蒸着装置1cに備えられた制御板22が小片22a・22bで形成されている例を示しており、その他の構成については実施の形態1から3において説明したとおりである。説明の便宜上、上記の実施の形態1から3の図面に示した部材と同じ機能を有する部材については、同じ符号を付し、その説明を省略する。
2 蒸着材料収納部
3 防着板
3a・3b 小片
4 シャッタ
4a・4b 小片
5、5a 真空チャンバ(蒸着室)
7、7a ストッカ(格納部材)
10、10a、10b、10c 昇華精製装置(回収装置)
11 再昇華室(昇華部)
12、12a、12b 収容室(捕捉部)
13、13a、13b、13c 蒸着源
14 ヒータ
15 配管
16、16a、16b 配管
17 電源
18 分離室(分離部)
18a 内壁
19a・19b 配管
20 配管
21 ノズル口(開口部)
22 制御板
22a、22b 小片
101 基板
110 シャドウマスク
Claims (17)
- 蒸着室において、蒸着源に備えられた蒸着材料収納部から放出された蒸着粒子を、基板上に蒸着させる蒸着装置であって、
上記蒸着材料収納部から第1の方向に放出される蒸着粒子は、上記基板上に蒸着され、
上記第1の方向とは異なる第2の方向に放出される蒸着粒子は、上記蒸着装置から取り外しできる第1の部材に蒸着され、
上記第1の部材の少なくとも一部は、複数個の小片が連結されてなり、
上記小片の各々には、上記小片同士を連結および分解できる連結部が備えられていることを特徴とする蒸着装置。 - 所定期間においては、少なくとも上記蒸着材料収納部から第1の方向に放出される蒸着粒子は、上記蒸着材料収納部と上記基板との間に備えられ、且つ、上記蒸着装置から取り外しできる第2の部材に蒸着され、
上記第2の部材の少なくとも一部は、複数個の上記小片が連結されてなることを特徴とする請求項1に記載の蒸着装置。 - 上記第1の部材は、上記蒸着粒子によって上記蒸着室が汚染されるのを防止するための防着板であることを特徴とする請求項1または2に記載の蒸着装置。
- 上記第1の部材は、上記蒸着材料収納部から蒸着粒子が放出される開口部と上記基板との間に備えられ、且つ、上記基板の法線方向に直交する方向に沿って、上記開口部を間に挟むように所定間隔で形成された複数の制御板であることを特徴とする請求項1または2に記載の蒸着装置。
- 上記蒸着源は、上記小片が複数個格納された格納部材を格納可能に形成されていることを特徴とする請求項1から4の何れか1項に記載の蒸着装置。
- 請求項1から4の何れか1項に記載の蒸着装置に備えられた上記小片が複数個格納された格納部材と、
上記小片および上記格納部材の少なくとも一方を加熱することによって、上記小片に蒸着された蒸着粒子を昇華させる昇華部と、
上記昇華された蒸着粒子を捕捉する第1の捕捉部と、を備えた回収装置。 - 請求項1から4の何れか1項に記載の蒸着装置と、
上記蒸着装置に備えられた蒸着室において、蒸着粒子が蒸着された小片が複数個格納された格納部材と、
上記小片および上記格納部材の少なくとも一方を加熱することによって、上記小片に蒸着された蒸着粒子を昇華させる昇華部と、
上記昇華された蒸着粒子を捕捉する第1の捕捉部と、を備えた回収装置。 - 上記第1の捕捉部は、上記蒸着装置に備えられた蒸着材料収納部に連結されており、
上記第1の捕捉部を捕捉した蒸着粒子の昇華温度以上で加熱することによって、上記蒸着材料収納部に上記捕捉した蒸着粒子を供給することを特徴とする請求項7に記載の回収装置。 - 上記第1の捕捉部は、上記蒸着源であることを特徴とする請求項7に記載の回収装置。
- 上記第1の捕捉部には、上記蒸着装置の蒸着源に備えられた蒸着材料収納部に格納できる蒸着材料回収容器が備えられており、
上記蒸着材料回収容器に、上記捕捉した蒸着粒子が回収されることを特徴とする請求項6または7に記載の回収装置。 - 上記小片および上記格納部材の少なくとも一方は、導電性材料で形成されており、通電によるジュール熱によって加熱を行い、上記小片に蒸着された蒸着粒子を昇華させることを特徴とする請求項6から10の何れか1項に記載の回収装置。
- 上記小片および上記格納部材は、上記昇華部に配置され、
上記昇華部の壁面を加熱することにより、上記小片に蒸着された蒸着粒子を昇華させることを特徴とする請求項6から10の何れか1項に記載の回収装置。 - 上記小片には、少なくとも2種類の異なる蒸着粒子が蒸着されており、
上記昇華部の壁面は、上記小片に蒸着された1種類の蒸着粒子のみが昇華される温度に加熱されていることを特徴とする請求項12に記載の回収装置。 - 上記小片には、少なくとも2種類の異なる蒸着粒子が蒸着されており、
上記小片および上記格納部材の少なくとも一方は、上記小片に蒸着された1種類の蒸着粒子のみが昇華される温度に加熱されていることを特徴とする請求項6から11の何れか1項に記載の回収装置。 - 上記小片には、少なくとも2種類の異なる蒸着粒子が蒸着されており、
上記昇華部と上記第1の捕捉部との間には、分離部が備えられており、
上記分離部は、上記昇華部において昇華された少なくとも2種類の異なる蒸着粒子と接する温度調整が可能な複数の内壁を有するとともに、上記内壁の温度は、上記昇華された少なくとも2種類の異なる蒸着粒子の昇華温度中、最も低い温度以上、2番目に低い温度未満で設定されており、
上記昇華部において昇華された上記少なくとも2種類の異なる蒸着粒子は、上記分離部を介して、上記第1の捕捉部に供給されることを特徴とする請求項6から12の何れか1項に記載の回収装置。 - 上記分離部の内壁に蒸着した蒸着粒子が1種類である場合には、上記内壁の温度を上記2番目に低い温度以上に設定することにより、上記分離部の内壁に蒸着した蒸着粒子は昇華され、上記第1の捕捉部とは異なる第2の捕捉部に供給されることを特徴とする請求項15に記載の回収装置。
- 上記分離部の内壁に蒸着した蒸着粒子が、2種類以上である場合には、上記内壁の温度を、上記分離部の内壁に蒸着した2種類以上の蒸着粒子の昇華温度中、最も低い温度以上、2番目に低い温度未満に設定することにより、上記分離部の内壁に蒸着した上記2種類以上の蒸着粒子中、1種類の蒸着粒子のみが昇華され、上記第1の捕捉部とは異なる第2の捕捉部に供給されることを特徴とする請求項15に記載の回収装置。
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US20130239891A1 (en) | 2013-09-19 |
JPWO2012073908A1 (ja) | 2014-05-19 |
JP5362920B2 (ja) | 2013-12-11 |
CN103237916A (zh) | 2013-08-07 |
CN103237916B (zh) | 2015-07-22 |
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