SG114589A1 - Film formation apparatus and film formation method and cleaning method - Google Patents
Film formation apparatus and film formation method and cleaning methodInfo
- Publication number
- SG114589A1 SG114589A1 SG200207346A SG200207346A SG114589A1 SG 114589 A1 SG114589 A1 SG 114589A1 SG 200207346 A SG200207346 A SG 200207346A SG 200207346 A SG200207346 A SG 200207346A SG 114589 A1 SG114589 A1 SG 114589A1
- Authority
- SG
- Singapore
- Prior art keywords
- film formation
- cleaning method
- formation apparatus
- cleaning
- formation method
- Prior art date
Links
- 230000015572 biosynthetic process Effects 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 238000004140 cleaning Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001379273 | 2001-12-12 | ||
JP2002046967 | 2002-02-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG114589A1 true SG114589A1 (en) | 2005-09-28 |
Family
ID=26625028
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200500710-9A SG149680A1 (en) | 2001-12-12 | 2002-12-04 | Film formation apparatus and film formation method and cleaning method |
SG200207346A SG114589A1 (en) | 2001-12-12 | 2002-12-04 | Film formation apparatus and film formation method and cleaning method |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200500710-9A SG149680A1 (en) | 2001-12-12 | 2002-12-04 | Film formation apparatus and film formation method and cleaning method |
Country Status (7)
Country | Link |
---|---|
US (3) | US6776847B2 (ja) |
EP (1) | EP1319732B1 (ja) |
JP (2) | JP5111287B2 (ja) |
KR (1) | KR100955595B1 (ja) |
CN (2) | CN1319116C (ja) |
SG (2) | SG149680A1 (ja) |
TW (1) | TWI286348B (ja) |
Families Citing this family (163)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7517551B2 (en) * | 2000-05-12 | 2009-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light-emitting device |
US6770562B2 (en) * | 2000-10-26 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and film formation method |
TWI262034B (en) * | 2002-02-05 | 2006-09-11 | Semiconductor Energy Lab | Manufacturing system, manufacturing method, method of operating a manufacturing apparatus, and light emitting device |
TWI286044B (en) * | 2002-02-22 | 2007-08-21 | Semiconductor Energy Lab | Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus |
SG113448A1 (en) * | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
EP1369499A3 (en) | 2002-04-15 | 2004-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
US6642092B1 (en) * | 2002-07-11 | 2003-11-04 | Sharp Laboratories Of America, Inc. | Thin-film transistors formed on a metal foil substrate |
JP3690380B2 (ja) * | 2002-08-02 | 2005-08-31 | セイコーエプソン株式会社 | 材料の配置方法、電子装置の製造方法、電気光学装置の製造方法 |
US20040123804A1 (en) | 2002-09-20 | 2004-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system and manufacturing method of light emitting device |
JP5072184B2 (ja) | 2002-12-12 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 成膜方法 |
CA2509952A1 (en) * | 2002-12-18 | 2004-11-25 | Cardinal Cg Company | Plasma-enhanced film deposition |
US7211461B2 (en) * | 2003-02-14 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
WO2004090928A1 (ja) * | 2003-04-04 | 2004-10-21 | Matsushita Electric Industrial Co. Ltd. | プラズマディスプレイパネルの製造方法 |
JP4493926B2 (ja) * | 2003-04-25 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 製造装置 |
US7211454B2 (en) * | 2003-07-25 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate |
KR100699994B1 (ko) | 2004-08-30 | 2007-03-26 | 삼성에스디아이 주식회사 | 라미네이션 장비 및 레이저 열전사 방법 |
US7315047B2 (en) | 2004-01-26 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
WO2005093120A1 (ja) * | 2004-03-29 | 2005-10-06 | Tokyo Electron Limited | 成膜装置および成膜方法 |
JP2006066884A (ja) * | 2004-07-27 | 2006-03-09 | Tokyo Electron Ltd | 成膜方法、成膜装置及び記憶媒体 |
WO2006016669A1 (en) * | 2004-08-13 | 2006-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR100699993B1 (ko) * | 2004-08-30 | 2007-03-26 | 삼성에스디아이 주식회사 | 레이저 열전사 방법 |
US20060081184A1 (en) * | 2004-10-19 | 2006-04-20 | Yeh Te L | Evaporation mask with high precision deposition pattern |
KR100626037B1 (ko) * | 2004-11-18 | 2006-09-20 | 삼성에스디아이 주식회사 | 마스크 세정방법 |
US7431807B2 (en) * | 2005-01-07 | 2008-10-07 | Universal Display Corporation | Evaporation method using infrared guiding heater |
JP4554378B2 (ja) * | 2005-01-21 | 2010-09-29 | 富士通セミコンダクター株式会社 | 窒化膜の形成方法、半導体装置の製造方法及びキャパシタの製造方法 |
US7918940B2 (en) * | 2005-02-07 | 2011-04-05 | Semes Co., Ltd. | Apparatus for processing substrate |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2006330684A (ja) * | 2005-04-26 | 2006-12-07 | Kyocera Corp | マスク洗浄装置、マスク洗浄方法、蒸着膜の形成方法、elディスプレイの製造装置、及びelディスプレイの製造方法 |
JP4758159B2 (ja) * | 2005-07-19 | 2011-08-24 | 株式会社日立ハイテクノロジーズ | プラズマエッチング装置および微粒子除去方法 |
JP5014603B2 (ja) * | 2005-07-29 | 2012-08-29 | 株式会社アルバック | 真空処理装置 |
US7615501B2 (en) * | 2005-08-11 | 2009-11-10 | 3M Innovative Properties Company | Method for making a thin film layer |
US7572741B2 (en) * | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
US20090263566A1 (en) * | 2005-09-21 | 2009-10-22 | Tadahiro Ohmi | Reduced Pressure Deposition Apparatus and Reduced Pressure Deposition Method |
KR101130545B1 (ko) * | 2005-11-26 | 2012-03-23 | 엘지디스플레이 주식회사 | 유기 전계발광 표시소자의 유기 발광물질 증착방법 |
US20070178225A1 (en) * | 2005-12-14 | 2007-08-02 | Keiji Takanosu | Vapor deposition crucible, thin-film forming apparatus comprising the same, and method of producing display device |
EP1801843B1 (de) * | 2005-12-22 | 2013-07-03 | Applied Materials GmbH & Co. KG | Anlage und Verfahren zur Behandlung von Substraten |
DE102005061563A1 (de) * | 2005-12-22 | 2007-07-19 | Applied Materials Gmbh & Co. Kg | Anlage zur Behandlung von Substraten und Verfahren |
DE102006003847B4 (de) * | 2006-01-26 | 2011-08-18 | Siemens AG, 80333 | Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat |
US8261690B2 (en) * | 2006-07-14 | 2012-09-11 | Georgia Tech Research Corporation | In-situ flux measurement devices, methods, and systems |
TW200809739A (en) * | 2006-08-08 | 2008-02-16 | Ritdisplay Corp | Method for fabricating active matrix organic electro-luminescence display panel |
WO2008069259A1 (en) * | 2006-12-05 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device |
JP4974672B2 (ja) * | 2006-12-28 | 2012-07-11 | 東京エレクトロン株式会社 | 圧力波発生装置 |
KR100866935B1 (ko) * | 2007-02-26 | 2008-11-04 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라즈마처리장치 및 플라즈마처리방법 |
US20080214007A1 (en) * | 2007-03-02 | 2008-09-04 | Texas Instruments Incorporated | Method for removing diamond like carbon residue from a deposition/etch chamber using a plasma clean |
CN101271869B (zh) * | 2007-03-22 | 2015-11-25 | 株式会社半导体能源研究所 | 发光器件的制造方法 |
JP2008248311A (ja) * | 2007-03-30 | 2008-10-16 | Fujifilm Corp | 真空蒸着装置 |
US20080268136A1 (en) * | 2007-04-27 | 2008-10-30 | Canon Kabushiki Kaisha | Method of producing organic light emitting apparatus |
JPWO2008149741A1 (ja) * | 2007-05-31 | 2010-08-26 | 株式会社アルバック | プラズマ処理装置のドライクリーニング方法 |
EP1998389B1 (en) | 2007-05-31 | 2018-01-31 | Applied Materials, Inc. | Method of cleaning a patterning device, method of depositing a layer system on a substrate, system for cleaning a patterning device, and coating system for depositing a layer system on a substrate |
KR101563237B1 (ko) * | 2007-06-01 | 2015-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 제조장치 및 발광장치 제작방법 |
US20090098309A1 (en) * | 2007-10-15 | 2009-04-16 | Advantech Global, Ltd | In-Situ Etching Of Shadow Masks Of A Continuous In-Line Shadow Mask Vapor Deposition System |
US8153201B2 (en) | 2007-10-23 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing light-emitting device, and evaporation donor substrate |
KR20090041314A (ko) * | 2007-10-23 | 2009-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판 및 발광장치의 제조방법 |
US8425974B2 (en) * | 2007-11-29 | 2013-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation donor substrate and method for manufacturing light-emitting device |
JP2009138210A (ja) * | 2007-12-04 | 2009-06-25 | Sony Corp | 成膜装置および成膜方法ならびに発光装置の製造方法 |
KR101689519B1 (ko) * | 2007-12-26 | 2016-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법 |
US8080811B2 (en) | 2007-12-28 | 2011-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing evaporation donor substrate and light-emitting device |
WO2009099002A1 (en) * | 2008-02-04 | 2009-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing light-emitting device |
US20090218219A1 (en) * | 2008-02-29 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Apparatus |
WO2009107548A1 (en) * | 2008-02-29 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
JP5416987B2 (ja) | 2008-02-29 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
JP5238544B2 (ja) * | 2008-03-07 | 2013-07-17 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
KR101143623B1 (ko) * | 2008-03-10 | 2012-05-09 | 에스케이하이닉스 주식회사 | 산화 처리를 이용한 위상반전마스크 형성방법 |
US8182863B2 (en) | 2008-03-17 | 2012-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
US7993945B2 (en) * | 2008-04-11 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
US7932112B2 (en) * | 2008-04-14 | 2011-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
US8409672B2 (en) * | 2008-04-24 | 2013-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device |
JP5159689B2 (ja) * | 2008-04-25 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
EP2135970A1 (en) * | 2008-06-20 | 2009-12-23 | Applied Materials, Inc. | Processing system and method for processing a substrate |
JP5469950B2 (ja) * | 2008-08-08 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
US8486736B2 (en) * | 2008-10-20 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
JP5291607B2 (ja) * | 2008-12-15 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
KR100994118B1 (ko) * | 2009-01-13 | 2010-11-15 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 및 그 제조 방법 |
JP5088331B2 (ja) * | 2009-01-26 | 2012-12-05 | 東京エレクトロン株式会社 | 熱処理装置用の構成部品及び熱処理装置 |
EP2230703A3 (en) | 2009-03-18 | 2012-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus and manufacturing method of lighting device |
FR2946462B1 (fr) | 2009-06-09 | 2011-07-01 | Commissariat Energie Atomique | Procede de realisation d'au moins un microcomposant avec un masque unique |
DE102009038519B4 (de) * | 2009-08-25 | 2012-05-31 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur Herstellung von Stöchiometriegradientenschichten |
JP5328726B2 (ja) * | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
US8486737B2 (en) * | 2009-08-25 | 2013-07-16 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
JP5611718B2 (ja) * | 2009-08-27 | 2014-10-22 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
JP4599469B1 (ja) * | 2009-08-31 | 2010-12-15 | 富士フイルム株式会社 | 有機電界発光素子用材料及び有機電界発光素子 |
US20110052795A1 (en) * | 2009-09-01 | 2011-03-03 | Samsung Mobile Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
KR101073558B1 (ko) * | 2009-10-08 | 2011-10-17 | 삼성모바일디스플레이주식회사 | 기판 합착 장치 및 기판 합착 방법 |
US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
EP2315234A1 (en) * | 2009-10-20 | 2011-04-27 | Applied Materials, Inc. | Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices |
KR101156431B1 (ko) * | 2009-12-01 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 증착 장치 및 이를 이용한 유기 발광 소자 제조 방법 |
KR101084184B1 (ko) | 2010-01-11 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101174875B1 (ko) | 2010-01-14 | 2012-08-17 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101193186B1 (ko) | 2010-02-01 | 2012-10-19 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
JP5237982B2 (ja) * | 2010-03-10 | 2013-07-17 | 株式会社日立ハイテクノロジーズ | 有機el用蒸着マスククリーニング装置、有機elディスプレイの製造装置および有機el用蒸着マスククリーニング方法 |
KR101156441B1 (ko) | 2010-03-11 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101202348B1 (ko) | 2010-04-06 | 2012-11-16 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
KR101223723B1 (ko) | 2010-07-07 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
TW201204845A (en) * | 2010-07-16 | 2012-02-01 | Hon Hai Prec Ind Co Ltd | Processing apparatus for smoothing film material and evaporation deposition device with same |
KR20120039944A (ko) * | 2010-10-18 | 2012-04-26 | 삼성모바일디스플레이주식회사 | 기판 증착 시스템 및 증착 방법 |
KR101723506B1 (ko) | 2010-10-22 | 2017-04-19 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101738531B1 (ko) | 2010-10-22 | 2017-05-23 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR20120045865A (ko) | 2010-11-01 | 2012-05-09 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
DE102010062082A1 (de) * | 2010-11-29 | 2012-05-31 | 4Jet Sales + Service Gmbh | Reinigen von Oberflächen in Vakuumapparaturen mittels Laser |
WO2012073908A1 (ja) * | 2010-12-03 | 2012-06-07 | シャープ株式会社 | 蒸着装置および回収装置 |
KR20120065789A (ko) | 2010-12-13 | 2012-06-21 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
KR101760897B1 (ko) | 2011-01-12 | 2017-07-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 구비하는 유기막 증착 장치 |
JP2012186158A (ja) * | 2011-02-14 | 2012-09-27 | Semiconductor Energy Lab Co Ltd | 照明装置及び発光装置の作製方法及び製造装置 |
US20120263887A1 (en) * | 2011-04-13 | 2012-10-18 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for ion-assisted atomic layer deposition |
US8940411B2 (en) | 2011-04-25 | 2015-01-27 | General Electric Company | Materials for optoelectronic devices |
KR101852517B1 (ko) | 2011-05-25 | 2018-04-27 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101840654B1 (ko) | 2011-05-25 | 2018-03-22 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101857249B1 (ko) | 2011-05-27 | 2018-05-14 | 삼성디스플레이 주식회사 | 패터닝 슬릿 시트 어셈블리, 유기막 증착 장치, 유기 발광 표시장치제조 방법 및 유기 발광 표시 장치 |
KR101826068B1 (ko) | 2011-07-04 | 2018-02-07 | 삼성디스플레이 주식회사 | 유기층 증착 장치 |
TWI433625B (zh) | 2011-07-04 | 2014-04-01 | Ind Tech Res Inst | 軟性電子元件的製法 |
DE102011113274A1 (de) * | 2011-09-01 | 2013-03-07 | Schmid Vacuum Technology Gmbh | Beschichtungsanlage |
JP5779804B2 (ja) * | 2011-10-12 | 2015-09-16 | 日東電工株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
JP2013161570A (ja) * | 2012-02-02 | 2013-08-19 | Nitto Denko Corp | 有機elデバイスの製造方法及び製造装置 |
US20130137273A1 (en) * | 2011-11-28 | 2013-05-30 | Infineon Technologies Ag | Semiconductor Processing System |
JP5875851B2 (ja) * | 2011-12-20 | 2016-03-02 | 株式会社アルバック | 薄膜製造方法、薄膜製造装置 |
CN102534506A (zh) * | 2012-01-20 | 2012-07-04 | 纳峰真空镀膜(上海)有限公司 | 低温真空镀膜装置 |
US8785235B2 (en) * | 2012-02-10 | 2014-07-22 | Tsmc Solar Ltd. | Apparatus and method for producing solar cells |
CN103325953B (zh) * | 2012-03-19 | 2016-02-10 | 瀚宇彩晶股份有限公司 | 有机发光二极管封装及其封装方法 |
US20130302937A1 (en) * | 2012-05-10 | 2013-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Film Formation Apparatus, Method for Forming Film, Method for Forming Multilayer Film or Light-Emitting Element, and Method for Cleaning Shadow Mask |
KR101938365B1 (ko) * | 2012-07-31 | 2019-04-12 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착량 측정 방법 |
KR102003199B1 (ko) * | 2012-12-18 | 2019-07-24 | 주식회사 원익아이피에스 | 박막증착장치 |
KR102075527B1 (ko) | 2013-05-16 | 2020-02-11 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
CN104213078A (zh) * | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | 一种低浓度掺杂的蒸发设备 |
KR102181233B1 (ko) * | 2013-07-19 | 2020-11-23 | 삼성디스플레이 주식회사 | 기상 증착 장치 및 이를 이용한 표시 장치의 제조방법 |
CN103474453B (zh) * | 2013-09-23 | 2016-09-21 | 京东方科技集团股份有限公司 | 电致发光装置及其制备方法 |
JP2015133444A (ja) * | 2014-01-15 | 2015-07-23 | 株式会社東芝 | 半導体製造装置および半導体装置の製造方法 |
CN106460167B (zh) * | 2014-03-18 | 2019-06-14 | 3D-奥克赛茨公司 | 化学气相沉积方法 |
EP2999019B1 (en) * | 2014-09-19 | 2019-06-12 | Novaled GmbH | Organic light-emitting diode including an electron transport layer stack comprising different lithium compounds and elemental metal |
CN104404450B (zh) * | 2014-10-28 | 2018-06-01 | 深圳市华星光电技术有限公司 | 用于升华型oled材料蒸镀的坩埚 |
CN104460072B (zh) * | 2014-12-31 | 2018-01-05 | 深圳市华星光电技术有限公司 | 基板烘烤装置 |
CN112011765B (zh) * | 2015-06-18 | 2022-10-21 | 佳能特机株式会社 | 蒸镀装置及其控制方法、以及成膜方法 |
CN105088142B (zh) * | 2015-07-30 | 2017-06-16 | 京东方科技集团股份有限公司 | 一种蒸镀方法 |
WO2017048696A1 (en) * | 2015-09-16 | 2017-03-23 | Advantech Global, Ltd | Evaporative deposition with improved deposition source |
CN105137660A (zh) * | 2015-09-25 | 2015-12-09 | 京东方科技集团股份有限公司 | 一种光配向膜杂质去除装置和方法 |
CN105132861A (zh) * | 2015-10-13 | 2015-12-09 | 京东方科技集团股份有限公司 | 一种蒸镀掩膜版以及蒸镀设备 |
JP6585180B2 (ja) * | 2015-10-22 | 2019-10-02 | 東京エレクトロン株式会社 | 膜形成装置及び膜形成方法 |
CN107282547A (zh) * | 2016-03-30 | 2017-10-24 | 东莞新科技术研究开发有限公司 | 电子元件的清洗方法 |
CN106222615B (zh) * | 2016-08-23 | 2019-05-21 | 电子科技大学 | 高通量组合材料芯片及其制备方法、制备装置 |
JP2019503431A (ja) * | 2016-12-12 | 2019-02-07 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板上に材料を堆積する装置、基板上に1つ以上の層を堆積するシステム、及び真空堆積システムをモニタする方法 |
EP3366804B1 (en) * | 2017-02-22 | 2022-05-11 | Satisloh AG | Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses |
EP3366805B1 (en) * | 2017-02-24 | 2022-01-12 | Satisloh AG | Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses, and heating device for it |
WO2018166622A1 (en) * | 2017-03-17 | 2018-09-20 | Applied Materials, Inc. | Methods of operating a vacuum processing system |
WO2018189906A1 (ja) | 2017-04-14 | 2018-10-18 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置の製造方法及び製造装置 |
KR102488145B1 (ko) * | 2017-05-30 | 2023-01-17 | 삼성디스플레이 주식회사 | 마스크 세정 장치 및 마스크 세정 방법 |
CN107123754A (zh) * | 2017-06-14 | 2017-09-01 | 京东方科技集团股份有限公司 | 一种有机电致发光器件及制备方法、蒸镀设备 |
JP6662840B2 (ja) * | 2017-12-11 | 2020-03-11 | 株式会社アルバック | 蒸着装置 |
US10766057B2 (en) * | 2017-12-28 | 2020-09-08 | Micron Technology, Inc. | Components and systems for cleaning a tool for forming a semiconductor device, and related methods |
US10227693B1 (en) * | 2018-01-31 | 2019-03-12 | Axcelis Technologies, Inc. | Outgassing impact on process chamber reduction via chamber pump and purge |
JP6588128B2 (ja) * | 2018-05-24 | 2019-10-09 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置の製造方法及び製造装置 |
CN108807129B (zh) * | 2018-06-21 | 2020-09-01 | 北京蜃景光电科技有限公司 | 镀膜腔室清洗装置及镀膜腔室清洗方法 |
RU2711292C1 (ru) * | 2018-11-21 | 2020-01-16 | Акционерное Общество "Российский Концерн По Производству Электрической И Тепловой Энергии На Атомных Станциях" (Ао "Концерн Росэнергоатом") | Способ дезактивации элемента конструкции ядерного реактора |
WO2020115980A1 (ja) * | 2018-12-03 | 2020-06-11 | 株式会社アルバック | 成膜装置および成膜方法 |
KR20200086582A (ko) * | 2019-01-09 | 2020-07-17 | 삼성전자주식회사 | 원자층 증착 장치 및 이를 이용한 박막 형성 방법 |
CN110016696B (zh) * | 2019-03-25 | 2023-04-07 | 广东工业大学 | 一种基于光致导电电极板的微电铸装置及其微电铸方法 |
CN109972099B (zh) * | 2019-05-10 | 2020-11-27 | 福建农林大学 | 一种制备片状氧化铁的方法 |
KR20210061639A (ko) * | 2019-11-20 | 2021-05-28 | 캐논 톡키 가부시키가이샤 | 성막 장치, 이를 사용한 성막 방법 및 전자 디바이스 제조 방법 |
CN111367361B (zh) * | 2020-02-29 | 2023-04-21 | 重庆顺贞科技有限公司 | 一种笔记本外壳转轴 |
RU2740591C1 (ru) * | 2020-05-27 | 2021-01-15 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Ростовский государственный университет путей сообщения" (ФГБОУ ВО РГУПС) | Способ получения многослойных износостойких алмазоподобных покрытий |
CN112634758A (zh) * | 2020-12-18 | 2021-04-09 | 惠州视维新技术有限公司 | 一种柔性屏的封装方法及封装系统 |
CN113075858A (zh) * | 2021-03-26 | 2021-07-06 | 歌尔股份有限公司 | 中间转印模板的处理方法 |
WO2023011733A1 (en) * | 2021-08-06 | 2023-02-09 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Method of operating an evaporation system, deflection device, and evaporation system |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04236759A (ja) * | 1991-01-19 | 1992-08-25 | Hitachi Cable Ltd | 蒸着装置 |
JPH08319586A (ja) * | 1995-05-24 | 1996-12-03 | Nec Yamagata Ltd | 真空処理装置のクリーニング方法 |
JPH10294181A (ja) * | 1997-02-24 | 1998-11-04 | Toray Ind Inc | 有機電界発光素子およびその製造方法 |
JP2000282219A (ja) * | 1999-04-02 | 2000-10-10 | Canon Inc | 有機膜真空蒸着用マスク再生方法及び装置 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6130661A (ja) * | 1984-07-19 | 1986-02-12 | Matsushita Electric Ind Co Ltd | 被膜形成装置 |
JPS61235553A (ja) * | 1985-04-12 | 1986-10-20 | Citizen Watch Co Ltd | 有色ipパタ−ン被膜の形成方法 |
US5039561A (en) * | 1986-08-25 | 1991-08-13 | Minnesota Mining And Manufacturing Company | Method for preparing an article having surface layer of uniformly oriented, crystalline, organic microstructures |
JPH01119662A (ja) * | 1987-10-30 | 1989-05-11 | Sumitomo Electric Ind Ltd | 有機物薄膜の製造法 |
US4987851A (en) | 1988-01-12 | 1991-01-29 | Kabushiki Kaisha Toshiba | Apparatus for forming organic thin film |
JPH0445259A (ja) * | 1990-06-11 | 1992-02-14 | Ulvac Japan Ltd | 成膜装置 |
JP3049799B2 (ja) * | 1991-02-27 | 2000-06-05 | ソニー株式会社 | プラズマ処理装置 |
JPH06116097A (ja) * | 1992-10-08 | 1994-04-26 | Mitsubishi Kasei Corp | 不純物が添加された有機ポリシラン薄膜又は炭化ケイ素薄膜及びその製造方法 |
JP3115134B2 (ja) * | 1992-11-27 | 2000-12-04 | 松下電器産業株式会社 | 薄膜処理装置および薄膜処理方法 |
JPH0762526A (ja) * | 1993-08-19 | 1995-03-07 | Mitsubishi Chem Corp | 有機電界発光素子の製造方法 |
JP3044168B2 (ja) * | 1994-09-20 | 2000-05-22 | 三菱電機株式会社 | 有機分子の薄膜製造方法および薄膜パターン製造方法 |
US6106627A (en) * | 1996-04-04 | 2000-08-22 | Sigma Laboratories Of Arizona, Inc. | Apparatus for producing metal coated polymers |
KR100516316B1 (ko) | 1996-05-15 | 2005-09-23 | 세이코 엡슨 가부시키가이샤 | 디바이스 제조 방법 및 전자 디바이스 제조 방법 |
US6037712A (en) | 1996-06-10 | 2000-03-14 | Tdk Corporation | Organic electroluminescence display device and producing method thereof |
JPH10102234A (ja) * | 1996-09-26 | 1998-04-21 | Canon Inc | スパッタ装置及び該装置を用いた成膜方法 |
US6294025B1 (en) * | 1996-11-01 | 2001-09-25 | THEVA DüNNSCHICHTTECHNIK GMBH | Device for producing oxidic thin films |
JP4059946B2 (ja) | 1996-12-06 | 2008-03-12 | 株式会社アルバック | 有機薄膜形成装置及び有機材料の再利用方法 |
CN1144198C (zh) * | 1997-05-08 | 2004-03-31 | 松下电器产业株式会社 | 光记录媒体制造装置和制造方法 |
JP3801730B2 (ja) * | 1997-05-09 | 2006-07-26 | 株式会社半導体エネルギー研究所 | プラズマcvd装置及びそれを用いた薄膜形成方法 |
US6271498B1 (en) * | 1997-06-23 | 2001-08-07 | Nissin Electric Co., Ltd | Apparatus for vaporizing liquid raw material and method of cleaning CVD apparatus |
JPH1161386A (ja) * | 1997-08-22 | 1999-03-05 | Fuji Electric Co Ltd | 有機薄膜発光素子の成膜装置 |
TW475078B (en) | 1997-09-30 | 2002-02-01 | Toshiba Corp | Liquid crystal display device and production of liquid crystal display device |
US6337102B1 (en) | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
JPH11172418A (ja) * | 1997-12-12 | 1999-06-29 | Ulvac Corp | 成膜装置 |
JP2000174094A (ja) * | 1998-12-08 | 2000-06-23 | Hitachi Ltd | 半導体製造装置 |
TW455912B (en) * | 1999-01-22 | 2001-09-21 | Sony Corp | Method and apparatus for film deposition |
JP2000243566A (ja) * | 1999-02-19 | 2000-09-08 | Sharp Corp | 有機電界発光素子及びその製造方法 |
JP2000328229A (ja) * | 1999-05-19 | 2000-11-28 | Canon Inc | 真空蒸着装置 |
JP2000355769A (ja) * | 1999-06-14 | 2000-12-26 | Mitsubishi Electric Corp | クリーニングガスの除害方法および除害装置 |
JP2001149877A (ja) * | 1999-11-29 | 2001-06-05 | Japan Steel Works Ltd:The | 処理装置内のクリーニング方法及び装置 |
TW490714B (en) | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
JP4785269B2 (ja) | 2000-05-02 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法及び成膜装置のクリーニング方法 |
US20020011205A1 (en) | 2000-05-02 | 2002-01-31 | Shunpei Yamazaki | Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device |
JP3628939B2 (ja) * | 2000-06-27 | 2005-03-16 | 松下電器産業株式会社 | 露光方法及び露光装置 |
JP2002322556A (ja) * | 2001-02-21 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 成膜方法及び成膜装置 |
US7432116B2 (en) * | 2001-02-21 | 2008-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for film deposition |
TWI277363B (en) * | 2002-08-30 | 2007-03-21 | Semiconductor Energy Lab | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
TW589920B (en) | 2003-04-04 | 2004-06-01 | Au Optronics Corp | Evaporation apparatus for organic light emitted diode |
-
2002
- 2002-12-04 SG SG200500710-9A patent/SG149680A1/en unknown
- 2002-12-04 SG SG200207346A patent/SG114589A1/en unknown
- 2002-12-10 EP EP02027587A patent/EP1319732B1/en not_active Expired - Lifetime
- 2002-12-12 CN CNB021542295A patent/CN1319116C/zh not_active Expired - Fee Related
- 2002-12-12 US US10/318,793 patent/US6776847B2/en not_active Expired - Lifetime
- 2002-12-12 CN CN2007100890376A patent/CN101054657B/zh not_active Expired - Fee Related
- 2002-12-12 KR KR1020020079021A patent/KR100955595B1/ko not_active IP Right Cessation
- 2002-12-12 TW TW091136004A patent/TWI286348B/zh not_active IP Right Cessation
-
2004
- 2004-08-09 US US10/913,467 patent/US7316983B2/en not_active Expired - Fee Related
-
2007
- 2007-09-21 US US11/858,962 patent/US7763320B2/en not_active Expired - Fee Related
-
2008
- 2008-08-08 JP JP2008205956A patent/JP5111287B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-23 JP JP2012097248A patent/JP5288660B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04236759A (ja) * | 1991-01-19 | 1992-08-25 | Hitachi Cable Ltd | 蒸着装置 |
JPH08319586A (ja) * | 1995-05-24 | 1996-12-03 | Nec Yamagata Ltd | 真空処理装置のクリーニング方法 |
JPH10294181A (ja) * | 1997-02-24 | 1998-11-04 | Toray Ind Inc | 有機電界発光素子およびその製造方法 |
JP2000282219A (ja) * | 1999-04-02 | 2000-10-10 | Canon Inc | 有機膜真空蒸着用マスク再生方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1319732A1 (en) | 2003-06-18 |
CN1428817A (zh) | 2003-07-09 |
CN1319116C (zh) | 2007-05-30 |
EP1319732B1 (en) | 2012-03-21 |
US20030124764A1 (en) | 2003-07-03 |
SG149680A1 (en) | 2009-02-27 |
US6776847B2 (en) | 2004-08-17 |
US20080081115A1 (en) | 2008-04-03 |
US7316983B2 (en) | 2008-01-08 |
US7763320B2 (en) | 2010-07-27 |
KR100955595B1 (ko) | 2010-05-03 |
CN101054657B (zh) | 2012-05-23 |
KR20030048348A (ko) | 2003-06-19 |
US20050106322A1 (en) | 2005-05-19 |
JP2008308766A (ja) | 2008-12-25 |
JP2012162806A (ja) | 2012-08-30 |
JP5111287B2 (ja) | 2013-01-09 |
TW200303574A (en) | 2003-09-01 |
JP5288660B2 (ja) | 2013-09-11 |
TWI286348B (en) | 2007-09-01 |
CN101054657A (zh) | 2007-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG114589A1 (en) | Film formation apparatus and film formation method and cleaning method | |
EP1394842A4 (en) | METHOD FOR CLEANING A THIN FILM FORMING APPARATUS | |
IL145930A0 (en) | Pool cleaning method and apparatus | |
EP1460678A4 (en) | CLEANING METHOD AND APPARATUS AND METHOD AND APPARATUS FOR ETCHING | |
EP1407114A4 (en) | APPARATUS AND METHOD FOR INSTALLING ANCHOR BOLTS | |
GB0129669D0 (en) | Apparatus and method | |
GB0101259D0 (en) | Apparatus and method | |
GB0119977D0 (en) | Apparatus and method | |
SG102055A1 (en) | Cleaning method and apparatus | |
GB0111413D0 (en) | Apparatus and method | |
GB0105688D0 (en) | Apparatus and method | |
SG101451A1 (en) | Film forming apparatus and film forming method | |
GB0110732D0 (en) | Apparatus and method | |
GB0109628D0 (en) | Apparatus and method | |
GB0129238D0 (en) | Cleaning process and apparatus | |
GB0130891D0 (en) | Apparatus and method | |
GB0217574D0 (en) | Apparatus and method | |
GB0111411D0 (en) | Apparatus and method | |
GB0101084D0 (en) | Apparatus and method | |
GB0114342D0 (en) | Apparatus and method | |
GB0116579D0 (en) | Cleaning apparatus and method | |
GB0107458D0 (en) | Method and apparatus | |
GB0114575D0 (en) | Cleaning method and apparatus | |
GB0108852D0 (en) | Method and apparatus | |
GB0116228D0 (en) | Apparatus and method |