KR920008945A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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KR920008945A
KR920008945A KR1019910018236A KR910018236A KR920008945A KR 920008945 A KR920008945 A KR 920008945A KR 1019910018236 A KR1019910018236 A KR 1019910018236A KR 910018236 A KR910018236 A KR 910018236A KR 920008945 A KR920008945 A KR 920008945A
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thin film
substrate
light shielding
film
composite substrate
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KR1019910018236A
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KR100238640B1 (ko
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유타카 하야시
마사아키 가미야
요시카즈 고지마
히로시 다카스
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원본미기재
고교 기쥬츠인쵸 이시하라 준죠
하라 레이노스케
세이코 덴시고교 가부시키가이샤
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    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract

내용 없음

Description

반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명에 따른 반도체장치로 구성된 평판형 광제어장치의 구조를 설명하기 위한 분리사시도이다.

Claims (19)

  1. 지지기판과 이 지지기판상에 배치되는 차광성박막, 이 차광성박막상에 적어도 1곳이상에 배치되는 절연막 및 이 절연막상에 배치되는 반도체박막으로 적층구조를 이루는 복합기판과; 상기 복합기판상에서 적어도 1곳이상 상기 차광성박막이 제거된 부위에 배치되는 투명전극과; 상기 반도체박막에 형성된 채널영역과 이 채널영역의 도통을 제어하는 주게이트전극을 갖춘 트랜지스터로 구성되어 상기 투명 전극에 전기적으로 접속되는 스위칭소자로 구성되고, 상기 차광성박막은 채널영역을 사이에 두고 상기 주게이트전극의 반대편에 배치되는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 차광성박막은 도전성재료로 이루어진 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 상기 지지기판은 산화알루미늄으로 형성된 것을 특징으로 하는 반도체장치.
  4. 제1항에 있어서, 상기 채널영역은 실리콘 단결정으로 된 반도체박막으로 형성된 것을 특징으로 하는 반도체장치.
  5. 투광성절연재료로 이루어진 지지기판과, 이 지지기판강에 배치되는 차광박막과, 이 차광박막상에 적어도 1곳이상 배치되는 절연막과, 단결정재료로 이루어지고 상기 절연막상에 접착되는 반도체박막이 적층된 구조로서 구성된 것을 특징으로 하는 다층기판.
  6. 제5항에 있어서, 상기 차광성박막은 도전성재료로 이루어진 것을 특징으로 하는 다층기판.
  7. 제6항에 있어서, 상기 차광성박막은 폴리실리콘으로 이루어진 것을 특징으로 하는 다층기판.
  8. 제5항에 있어서, 상기 차광성박막은 지지기판상에 해테로에피택셜 성장하는 단결정실리콘으로 이루어지고, 상기 반도체박막은 차광성박막상에서 에피택셜성장된 것을 특징으로 하는 복합기판.
  9. 제6항에 있어서, 상기 차광성박막은 단층막 또는 제르마니움과 실리콘 제르마니움 그리고/ 또는 실리콘으로 구성된 다층막으로 된것을 특징으로 하는 복합기판.
  10. 제5항에 있어서, 상기 단층구조는 상기 지지기판과, 차광박막사이에 형성되는 잡지막이 포함되는 것을 특징으로 하는 복합기판.
  11. 제10항에 있어서, 상기 접지막은 옥시나이트라이드로 이루어진 것을 특징으로 하는 복합기판.
  12. 제10항에 있어서, 상기 접지막은 산화실리콘으로 이루어지고, 상기 지지기판은 산화실리콘을 주성분으로 하는 석영으로 이루어진 것을 특징으로 하는 복합기판.
  13. 제5항에 있어서, 상기 절연막은 질화실리콘으로 이루어진 것을 특징으로 하는 복합기판.
  14. 제5항에 있어서, 상기 절연막은 산화실리콘으로 이루어진 것을 특징으로 하는 복합기판.
  15. 제5항에 있어서, 상기 절연막은 질화실리콘과 산화실리콘으로 이루어진 다층막으로 된 것을 특징으로 하는 복합기판.
  16. 제5항에 있어서, 상기 반도체박막은 실리콘단결정박막으로 이루어진 것을 특징으로 하는 복합기판.
  17. 지지기판상에 차광박막과 절연막 및 반도체박막을 순차적으로 적층하여서된 적층레이어를 갖춘 기판을 형성하는 공정과; 상기 적층레이어를 선택적으로 에칭하여 패턴화된 차광박막을 형성하는 공정과; 상기 반도체박막내에 형성되는 채널영역과 이 채널영역을 덮는 주게이트 전극을 갖춘 트랜지스터로 구성되는 스위칭 소자를 행성하는 공정과; 상기 기판상에 구성된 상기 스위칭 소자에 전기적 접속을 이루게 되는 투명전극을 형성하는 공정으로 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.
  18. 지지기판과 이 지지기판상에 베치되는 차광박막, 이 차광박막상에 적어도 1곳이상에 배치되는 절연막, 이 절연막상에 배치되는 반도체박막, 이 반도체박막상에 배치되는 화소전극 및 이 화소전극을 도통시켜주기 위하여 상기 반도체박막에 배치되는 스위칭소자가 적층구조를 이루는 복합기판과; 일정한 간격의 공간을 유지하며 상기 복합기판과 대항하여 설치되는 배면기판과; 상기 화소전극의 도통에 따라 광학적으로 변화시키기 위하여 상기 공간내에 주입되는 전기광학재료로 구성된 것을 특징으로 하는 광제어장치.
  19. 제18항에 있어서, 트랜지스터로 구성된 상기 스위칭소자는 상기 반도체막막내에 형성되는 채널영역과 상기 채널영역의 도통을 제어하는 주게이트전극으로 구성되고, 상기 차광박막은 상기 채널영역을 사이에두고 상기 주게이트전극의 반대편에 형성된 것을 특징으로 하는 광표시장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910018236A 1990-10-16 1991-10-16 반도체장치 및 그 제조방법 KR100238640B1 (ko)

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US6040200A (en) 2000-03-21
USRE36836E (en) 2000-08-29
US5926699A (en) 1999-07-20
EP0481734B1 (en) 1999-12-29
US5759878A (en) 1998-06-02
KR100238640B1 (ko) 2000-01-15
US5672518A (en) 1997-09-30
DE69131879D1 (de) 2000-02-03
JPH04152574A (ja) 1992-05-26
EP0481734A3 (en) 1993-08-25
JPH0824193B2 (ja) 1996-03-06
EP0481734A2 (en) 1992-04-22
DE69131879T2 (de) 2000-05-04
US5233211A (en) 1993-08-03

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