KR20100105536A - 데이터 저장 및 적층가능 구성 - Google Patents
데이터 저장 및 적층가능 구성 Download PDFInfo
- Publication number
- KR20100105536A KR20100105536A KR1020107008767A KR20107008767A KR20100105536A KR 20100105536 A KR20100105536 A KR 20100105536A KR 1020107008767 A KR1020107008767 A KR 1020107008767A KR 20107008767 A KR20107008767 A KR 20107008767A KR 20100105536 A KR20100105536 A KR 20100105536A
- Authority
- KR
- South Korea
- Prior art keywords
- memory device
- input
- output
- stack
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/879—Bump connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/26—Configurations of stacked chips the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Image Processing (AREA)
- Editing Of Facsimile Originals (AREA)
- Non-Volatile Memory (AREA)
- Memory System (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1534507P | 2007-12-20 | 2007-12-20 | |
| US61/015,345 | 2007-12-20 | ||
| US3220308P | 2008-02-28 | 2008-02-28 | |
| US61/032,203 | 2008-02-28 | ||
| US12/168,354 | 2008-07-07 | ||
| US12/168,354 US8399973B2 (en) | 2007-12-20 | 2008-07-07 | Data storage and stackable configurations |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100105536A true KR20100105536A (ko) | 2010-09-29 |
Family
ID=40788405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107008767A Ceased KR20100105536A (ko) | 2007-12-20 | 2008-12-11 | 데이터 저장 및 적층가능 구성 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8399973B2 (https=) |
| EP (2) | EP2223300B1 (https=) |
| JP (2) | JP5469088B2 (https=) |
| KR (1) | KR20100105536A (https=) |
| CN (1) | CN101919002B (https=) |
| ES (1) | ES2439960T3 (https=) |
| TW (1) | TWI460846B (https=) |
| WO (1) | WO2009079749A1 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140080378A (ko) * | 2012-12-20 | 2014-06-30 | 에스케이하이닉스 주식회사 | 토큰 링 루프를 갖는 스택 패키지 |
| KR20140098542A (ko) * | 2013-01-31 | 2014-08-08 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| KR20150120617A (ko) * | 2014-04-18 | 2015-10-28 | 에스케이하이닉스 주식회사 | 반도체 칩 적층 패키지 |
| KR20160076044A (ko) * | 2014-12-22 | 2016-06-30 | 삼성전자주식회사 | 입출력 부하를 감소하는 적층형 메모리 칩, 이를 포함하는 메모리 모듈 및 메모리 시스템 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8472795B2 (en) * | 2006-09-19 | 2013-06-25 | Capso Vision, Inc | System and method for capsule camera with on-board storage |
| US8026740B2 (en) | 2008-03-21 | 2011-09-27 | Micron Technology, Inc. | Multi-level signaling for low power, short channel applications |
| US7978721B2 (en) | 2008-07-02 | 2011-07-12 | Micron Technology Inc. | Multi-serial interface stacked-die memory architecture |
| JP2010021449A (ja) * | 2008-07-11 | 2010-01-28 | Toshiba Corp | 半導体装置 |
| US9893004B2 (en) * | 2011-07-27 | 2018-02-13 | Broadpak Corporation | Semiconductor interposer integration |
| US8014166B2 (en) * | 2008-09-06 | 2011-09-06 | Broadpak Corporation | Stacking integrated circuits containing serializer and deserializer blocks using through silicon via |
| US8086913B2 (en) | 2008-09-11 | 2011-12-27 | Micron Technology, Inc. | Methods, apparatus, and systems to repair memory |
| JP5543094B2 (ja) * | 2008-10-10 | 2014-07-09 | ピーエスフォー ルクスコ エスエイアールエル | 低ノイズ半導体パッケージ |
| US8472199B2 (en) * | 2008-11-13 | 2013-06-25 | Mosaid Technologies Incorporated | System including a plurality of encapsulated semiconductor chips |
| US8674482B2 (en) * | 2008-11-18 | 2014-03-18 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Semiconductor chip with through-silicon-via and sidewall pad |
| US8259461B2 (en) * | 2008-11-25 | 2012-09-04 | Micron Technology, Inc. | Apparatus for bypassing faulty connections |
| US8900921B2 (en) * | 2008-12-11 | 2014-12-02 | Stats Chippac, Ltd. | Semiconductor device and method of forming topside and bottom-side interconnect structures around core die with TSV |
| JP2010192680A (ja) * | 2009-02-18 | 2010-09-02 | Elpida Memory Inc | 半導体装置 |
| US8328218B2 (en) * | 2009-07-13 | 2012-12-11 | Columbia Cycle Works, LLC | Commuter vehicle |
| US8264067B2 (en) * | 2009-10-09 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through silicon via (TSV) wire bond architecture |
| US9142262B2 (en) | 2009-10-23 | 2015-09-22 | Rambus Inc. | Stacked semiconductor device |
| US8421500B2 (en) * | 2009-11-30 | 2013-04-16 | International Business Machines Corporation | Integrated circuit with stacked computational units and configurable through vias |
| US9123552B2 (en) * | 2010-03-30 | 2015-09-01 | Micron Technology, Inc. | Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same |
| US8843692B2 (en) | 2010-04-27 | 2014-09-23 | Conversant Intellectual Property Management Inc. | System of interconnected nonvolatile memories having automatic status packet |
| KR20120024099A (ko) * | 2010-09-06 | 2012-03-14 | 삼성전자주식회사 | 멀티-칩 패키지 및 그의 제조 방법 |
| KR20120028484A (ko) * | 2010-09-15 | 2012-03-23 | 삼성전자주식회사 | 모바일 기기에 채용하기 적합한 복합형 반도체 장치 |
| KR101157032B1 (ko) * | 2010-11-17 | 2012-06-21 | 에스케이하이닉스 주식회사 | 반도체 장치 |
| US8363418B2 (en) * | 2011-04-18 | 2013-01-29 | Morgan/Weiss Technologies Inc. | Above motherboard interposer with peripheral circuits |
| JP2013050860A (ja) * | 2011-08-31 | 2013-03-14 | Renesas Electronics Corp | マイクロコンピュータ及びマルチマイクロコンピュータシステム |
| US9269646B2 (en) | 2011-11-14 | 2016-02-23 | Micron Technology, Inc. | Semiconductor die assemblies with enhanced thermal management and semiconductor devices including same |
| WO2013071399A1 (en) * | 2011-11-14 | 2013-05-23 | Mosaid Technologies Incorporated | Package having stacked memory dies with serially connected buffer dies |
| KR20130104430A (ko) * | 2012-03-14 | 2013-09-25 | 삼성전자주식회사 | 멀티-칩 패키지 및 그의 제조 방법 |
| US9343449B2 (en) * | 2012-07-06 | 2016-05-17 | Nvidia Corporation | Alternative 3D stacking scheme for DRAMs atop GPUs |
| WO2014097916A1 (ja) * | 2012-12-18 | 2014-06-26 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
| KR102018885B1 (ko) * | 2012-12-20 | 2019-09-05 | 삼성전자주식회사 | 관통전극을 갖는 반도체 소자 및 그 제조방법 |
| JP5843803B2 (ja) * | 2013-03-25 | 2016-01-13 | 株式会社東芝 | 半導体装置とその製造方法 |
| KR20150062760A (ko) | 2013-11-29 | 2015-06-08 | 에스케이하이닉스 주식회사 | 플립플롭 회로 및 이를 이용한 반도체 장치 |
| JP6071929B2 (ja) * | 2014-03-13 | 2017-02-01 | 株式会社東芝 | 半導体装置 |
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| US9825002B2 (en) | 2015-07-17 | 2017-11-21 | Invensas Corporation | Flipped die stack |
| US9490195B1 (en) | 2015-07-17 | 2016-11-08 | Invensas Corporation | Wafer-level flipped die stacks with leadframes or metal foil interconnects |
| US9871019B2 (en) | 2015-07-17 | 2018-01-16 | Invensas Corporation | Flipped die stack assemblies with leadframe interconnects |
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| US9508691B1 (en) | 2015-12-16 | 2016-11-29 | Invensas Corporation | Flipped die stacks with multiple rows of leadframe interconnects |
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| JP2020043258A (ja) * | 2018-09-12 | 2020-03-19 | キオクシア株式会社 | 半導体メモリおよびその製造方法 |
| CN110164488A (zh) * | 2019-04-08 | 2019-08-23 | 苏州汇峰微电子有限公司 | 一种支持多元存储配置的存储器 |
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| JP4977101B2 (ja) * | 2008-08-26 | 2012-07-18 | 株式会社東芝 | 積層型半導体装置 |
| JP2011166026A (ja) * | 2010-02-12 | 2011-08-25 | Elpida Memory Inc | 半導体装置 |
| JP5640406B2 (ja) | 2010-03-12 | 2014-12-17 | 株式会社リコー | 半導電性複合樹脂 |
-
2008
- 2008-07-07 US US12/168,354 patent/US8399973B2/en active Active
- 2008-12-11 WO PCT/CA2008/002145 patent/WO2009079749A1/en not_active Ceased
- 2008-12-11 EP EP08863853.1A patent/EP2223300B1/en active Active
- 2008-12-11 CN CN2008801192976A patent/CN101919002B/zh active Active
- 2008-12-11 JP JP2010538288A patent/JP5469088B2/ja not_active Expired - Fee Related
- 2008-12-11 EP EP13176085.2A patent/EP2650880A1/en not_active Withdrawn
- 2008-12-11 ES ES08863853.1T patent/ES2439960T3/es active Active
- 2008-12-11 KR KR1020107008767A patent/KR20100105536A/ko not_active Ceased
- 2008-12-16 TW TW097148910A patent/TWI460846B/zh active
-
2013
- 2013-02-12 US US13/765,059 patent/US9183892B2/en active Active
- 2013-06-10 JP JP2013121853A patent/JP5548803B2/ja not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140080378A (ko) * | 2012-12-20 | 2014-06-30 | 에스케이하이닉스 주식회사 | 토큰 링 루프를 갖는 스택 패키지 |
| KR20140098542A (ko) * | 2013-01-31 | 2014-08-08 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| KR20150120617A (ko) * | 2014-04-18 | 2015-10-28 | 에스케이하이닉스 주식회사 | 반도체 칩 적층 패키지 |
| KR20160076044A (ko) * | 2014-12-22 | 2016-06-30 | 삼성전자주식회사 | 입출력 부하를 감소하는 적층형 메모리 칩, 이를 포함하는 메모리 모듈 및 메모리 시스템 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2223300A1 (en) | 2010-09-01 |
| JP2011508936A (ja) | 2011-03-17 |
| EP2223300A4 (en) | 2011-03-02 |
| US20130182485A1 (en) | 2013-07-18 |
| EP2650880A1 (en) | 2013-10-16 |
| TW200943525A (en) | 2009-10-16 |
| JP2013232277A (ja) | 2013-11-14 |
| CN101919002B (zh) | 2013-11-06 |
| JP5469088B2 (ja) | 2014-04-09 |
| US8399973B2 (en) | 2013-03-19 |
| JP5548803B2 (ja) | 2014-07-16 |
| CN101919002A (zh) | 2010-12-15 |
| US20090161402A1 (en) | 2009-06-25 |
| WO2009079749A1 (en) | 2009-07-02 |
| EP2223300B1 (en) | 2013-09-18 |
| US9183892B2 (en) | 2015-11-10 |
| TWI460846B (zh) | 2014-11-11 |
| ES2439960T3 (es) | 2014-01-27 |
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