KR101432764B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR101432764B1
KR101432764B1 KR1020090105292A KR20090105292A KR101432764B1 KR 101432764 B1 KR101432764 B1 KR 101432764B1 KR 1020090105292 A KR1020090105292 A KR 1020090105292A KR 20090105292 A KR20090105292 A KR 20090105292A KR 101432764 B1 KR101432764 B1 KR 101432764B1
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South Korea
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layer
electrode
tft
circuit
thin film
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Korean (ko)
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KR20100054091A (ko
Inventor
히데카주 미야이리
타케시 오사다
켄고 아키모토
순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Shift Register Type Memory (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
KR1020090105292A 2008-11-13 2009-11-03 반도체장치의 제조방법 Expired - Fee Related KR101432764B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-291329 2008-11-13
JP2008291329 2008-11-13

Related Child Applications (1)

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KR1020140043337A Division KR101639181B1 (ko) 2008-11-13 2014-04-11 표시장치 및 반도체장치

Publications (2)

Publication Number Publication Date
KR20100054091A KR20100054091A (ko) 2010-05-24
KR101432764B1 true KR101432764B1 (ko) 2014-08-21

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020090105292A Expired - Fee Related KR101432764B1 (ko) 2008-11-13 2009-11-03 반도체장치의 제조방법
KR1020140043337A Expired - Fee Related KR101639181B1 (ko) 2008-11-13 2014-04-11 표시장치 및 반도체장치
KR1020160080636A Active KR101684853B1 (ko) 2008-11-13 2016-06-28 반도체장치, 게이트선 구동회로, 표시장치 및 전자기기

Family Applications After (2)

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KR1020140043337A Expired - Fee Related KR101639181B1 (ko) 2008-11-13 2014-04-11 표시장치 및 반도체장치
KR1020160080636A Active KR101684853B1 (ko) 2008-11-13 2016-06-28 반도체장치, 게이트선 구동회로, 표시장치 및 전자기기

Country Status (5)

Country Link
US (2) US8518739B2 (enExample)
JP (14) JP5577075B2 (enExample)
KR (3) KR101432764B1 (enExample)
CN (1) CN101740583B (enExample)
TW (1) TWI470806B (enExample)

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KR101633142B1 (ko) 2008-10-24 2016-06-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
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KR101291384B1 (ko) 2008-11-21 2013-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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