TWI470806B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI470806B
TWI470806B TW98138435A TW98138435A TWI470806B TW I470806 B TWI470806 B TW I470806B TW 98138435 A TW98138435 A TW 98138435A TW 98138435 A TW98138435 A TW 98138435A TW I470806 B TWI470806 B TW I470806B
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TW
Taiwan
Prior art keywords
electrode
gate electrode
layer
oxide semiconductor
semiconductor layer
Prior art date
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TW98138435A
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English (en)
Chinese (zh)
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TW201034203A (en
Inventor
Hidekazu Miyairi
Takeshi Osada
Kengo Akimoto
Shunpei Yamazaki
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Semiconductor Energy Lab
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Publication of TW201034203A publication Critical patent/TW201034203A/zh
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Publication of TWI470806B publication Critical patent/TWI470806B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Shift Register Type Memory (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
TW98138435A 2008-11-13 2009-11-12 半導體裝置及其製造方法 TWI470806B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008291329 2008-11-13

Publications (2)

Publication Number Publication Date
TW201034203A TW201034203A (en) 2010-09-16
TWI470806B true TWI470806B (zh) 2015-01-21

Family

ID=42164365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98138435A TWI470806B (zh) 2008-11-13 2009-11-12 半導體裝置及其製造方法

Country Status (5)

Country Link
US (2) US8518739B2 (enExample)
JP (14) JP5577075B2 (enExample)
KR (3) KR101432764B1 (enExample)
CN (1) CN101740583B (enExample)
TW (1) TWI470806B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI745420B (zh) * 2017-08-25 2021-11-11 聯華電子股份有限公司 半導體結構

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101579050B1 (ko) 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
CN103928476A (zh) 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20180137606A (ko) 2008-10-24 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR102556313B1 (ko) 2008-11-21 2023-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102221207B1 (ko) 2009-09-04 2021-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
CN102576734B (zh) 2009-10-21 2015-04-22 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
WO2011052368A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
KR102481935B1 (ko) 2009-11-06 2022-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8395156B2 (en) * 2009-11-24 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101741732B1 (ko) * 2010-05-07 2017-05-31 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101872927B1 (ko) * 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101862808B1 (ko) * 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101845480B1 (ko) * 2010-06-25 2018-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI541782B (zh) * 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 液晶顯示裝置
US20120001179A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8422272B2 (en) * 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101979758B1 (ko) * 2010-08-27 2019-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
KR101426515B1 (ko) * 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
US8916866B2 (en) * 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI525818B (zh) 2010-11-30 2016-03-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之製造方法
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9048327B2 (en) * 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
KR101952570B1 (ko) * 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8643008B2 (en) * 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6116149B2 (ja) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
US9660092B2 (en) * 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
US8698137B2 (en) 2011-09-14 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013084333A (ja) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd シフトレジスタ回路
US10014068B2 (en) * 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
CN104321967B (zh) * 2012-05-25 2018-01-09 株式会社半导体能源研究所 可编程逻辑装置及半导体装置
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
CN103268876B (zh) * 2012-09-27 2016-03-30 厦门天马微电子有限公司 静电释放保护电路、显示面板和显示装置
TWI627751B (zh) * 2013-05-16 2018-06-21 半導體能源研究所股份有限公司 半導體裝置
TWI624936B (zh) * 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
US20150069510A1 (en) * 2013-09-10 2015-03-12 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin film transistor, array substrate, and display panel
CN103474472B (zh) * 2013-09-10 2016-05-11 深圳市华星光电技术有限公司 一种薄膜晶体管、阵列基板及显示面板
CN103474473B (zh) * 2013-09-10 2016-02-03 深圳市华星光电技术有限公司 一种薄膜晶体管开关及其制造方法
TWI656633B (zh) * 2014-02-28 2019-04-11 日商半導體能源研究所股份有限公司 顯示裝置的製造方法及電子裝置的製造方法
WO2015159179A1 (en) * 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102354008B1 (ko) 2014-05-29 2022-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법 및 전자 기기
TWI841974B (zh) 2014-11-21 2024-05-11 日商半導體能源研究所股份有限公司 半導體裝置
KR102273500B1 (ko) * 2014-12-30 2021-07-06 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시 장치
CN104576658B (zh) * 2014-12-30 2017-11-14 天马微电子股份有限公司 一种阵列基板及其制作方法及显示器
KR20160096786A (ko) * 2015-02-05 2016-08-17 삼성디스플레이 주식회사 유기 발광 표시 장치
CN106298883B (zh) 2015-06-04 2020-09-15 昆山工研院新型平板显示技术中心有限公司 一种薄膜晶体管及其制备方法
US9496415B1 (en) 2015-12-02 2016-11-15 International Business Machines Corporation Structure and process for overturned thin film device with self-aligned gate and S/D contacts
JP6904730B2 (ja) 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 撮像装置
SG10201701689UA (en) 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
WO2017187301A1 (en) * 2016-04-28 2017-11-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
US10615187B2 (en) 2016-07-27 2020-04-07 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
KR20180076832A (ko) 2016-12-28 2018-07-06 엘지디스플레이 주식회사 전계 발광 표시 장치 및 그 제조 방법
CN108255331B (zh) * 2016-12-29 2024-03-08 京东方科技集团股份有限公司 柔性触摸屏及制作方法、显示屏及制作方法以及显示设备
JP6651050B2 (ja) * 2017-02-16 2020-02-19 三菱電機株式会社 薄膜トランジスタ、薄膜トランジスタ基板、液晶表示装置、及び、薄膜トランジスタ基板の製造方法
US10290665B2 (en) * 2017-04-10 2019-05-14 Shenzhen China Star Optoelectronics Technology Co., Ltd Array substrates, display devices, and the manufacturing methods thereof
JP6782211B2 (ja) * 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法
KR102566157B1 (ko) * 2018-06-28 2023-08-11 삼성디스플레이 주식회사 표시장치
US10804406B2 (en) 2018-10-30 2020-10-13 Sharp Kabushiki Kaisha Thin-film transistor substrate, liquid crystal display device including the same, and method for producing thin-film transistor substrate
US11488990B2 (en) 2019-04-29 2022-11-01 Sharp Kabushiki Kaisha Active matrix substrate and production method thereof
CN110211974B (zh) * 2019-06-12 2022-05-24 厦门天马微电子有限公司 一种阵列基板、显示面板及阵列基板的制造方法
CN111261108A (zh) * 2020-02-11 2020-06-09 深圳市华星光电半导体显示技术有限公司 栅极驱动电路
WO2022043826A1 (ja) 2020-08-27 2022-03-03 株式会社半導体エネルギー研究所 半導体装置、表示装置、及び電子機器
CN116613136A (zh) * 2022-02-09 2023-08-18 群创光电股份有限公司 电子装置
US12078903B2 (en) * 2022-09-09 2024-09-03 Sharp Display Technology Corporation Active matrix substrate and liquid crystal display device

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200303008A (en) * 2002-02-04 2003-08-16 Iljin Diamond Co Ltd Liquid crystal display for using poly thin film transistor
JP2003273228A (ja) * 2002-03-15 2003-09-26 Casio Comput Co Ltd 半導体装置および表示駆動装置
JP2003309266A (ja) * 2002-04-17 2003-10-31 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子の製造方法
US20050199959A1 (en) * 2004-03-12 2005-09-15 Chiang Hai Q. Semiconductor device
US20050275038A1 (en) * 2004-06-14 2005-12-15 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
TWI250654B (en) * 2005-07-13 2006-03-01 Au Optronics Corp Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof
US20060054888A1 (en) * 2002-06-13 2006-03-16 Yoshihiro Ito Semiconductor device and method for manufacturing semiconductor device
US20060286737A1 (en) * 2005-06-16 2006-12-21 Levy David H Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US20070054507A1 (en) * 2005-09-06 2007-03-08 Canon Kabushiki Kaisha Method of fabricating oxide semiconductor device
US20070063211A1 (en) * 2005-09-06 2007-03-22 Canon Kabushiki Kaisha Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
JP2007096055A (ja) * 2005-09-29 2007-04-12 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
TWI280664B (en) * 2004-06-24 2007-05-01 Chunghwa Picture Tubes Ltd Double gate thin film transistor, pixel structure, and fabrication method thereof
TW200730985A (en) * 2005-10-05 2007-08-16 Idemitsu Kosan Co Thin film transistor substrate and manufacturing method thereof
TW200735371A (en) * 2005-12-02 2007-09-16 Idemitsu Kosan Co Thin film transistor substrate and thin film transistor substrate manufacturing method
TW200737526A (en) * 2006-01-31 2007-10-01 Idemitsu Kosan Co TFT substrate, reflective TFT substrate and method for manufacturing such substrates
TW200739919A (en) * 2006-02-09 2007-10-16 Idemitsu Kosan Co Reflective TFT substrate and method for manufacturing reflective TFT substrate
TWI295855B (en) * 2006-03-03 2008-04-11 Ind Tech Res Inst Double gate thin-film transistor and method for forming the same
TWI299905B (en) * 2005-04-19 2008-08-11 Lg Display Co Ltd Method for fabricating thin film transistor of liquid crystal display device

Family Cites Families (173)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098680A (ja) * 1983-11-04 1985-06-01 Seiko Instr & Electronics Ltd 電界効果型薄膜トランジスタ
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63224258A (ja) * 1987-03-12 1988-09-19 Mitsubishi Electric Corp 薄膜トランジスタ
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63301565A (ja) 1987-05-30 1988-12-08 Matsushita Electric Ind Co Ltd 薄膜集積回路
JPH02156676A (ja) 1988-12-09 1990-06-15 Fuji Xerox Co Ltd 薄膜半導体装置
KR0133536B1 (en) * 1989-03-24 1998-04-22 Lg Electronics Inc Amorphous silicon thin film transistor with dual gates and
DE69107101T2 (de) 1990-02-06 1995-05-24 Semiconductor Energy Lab Verfahren zum Herstellen eines Oxydfilms.
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP2572003B2 (ja) 1992-03-30 1997-01-16 三星電子株式会社 三次元マルチチャンネル構造を有する薄膜トランジスタの製造方法
GB9208324D0 (en) * 1992-04-15 1992-06-03 British Tech Group Semiconductor devices
JPH06202156A (ja) 1992-12-28 1994-07-22 Sharp Corp ドライバーモノリシック駆動素子
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
US5847410A (en) 1995-11-24 1998-12-08 Semiconductor Energy Laboratory Co. Semiconductor electro-optical device
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JPH10290012A (ja) 1997-04-14 1998-10-27 Nec Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP4236716B2 (ja) * 1997-09-29 2009-03-11 株式会社半導体エネルギー研究所 半導体装置
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP2001284592A (ja) 2000-03-29 2001-10-12 Sony Corp 薄膜半導体装置及びその駆動方法
US7633471B2 (en) 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
US6828587B2 (en) 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
US6549071B1 (en) 2000-09-12 2003-04-15 Silicon Laboratories, Inc. Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
KR100776768B1 (ko) * 2001-07-21 2007-11-16 삼성전자주식회사 액정표시패널용 기판 및 그 제조방법
JP2003037268A (ja) * 2001-07-24 2003-02-07 Minolta Co Ltd 半導体素子及びその製造方法
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP2003243658A (ja) * 2002-02-12 2003-08-29 Seiko Epson Corp 半導体装置、電気光学装置、電子機器、半導体装置の製造方法、電気光学装置の製造方法
JP2003243657A (ja) * 2002-02-12 2003-08-29 Seiko Epson Corp 半導体装置、電気光学装置、電子機器、半導体装置の製造方法、電気光学装置の製造方法
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
JP4338988B2 (ja) * 2002-02-22 2009-10-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP2003280034A (ja) 2002-03-20 2003-10-02 Sharp Corp Ｔｆｔ基板およびそれを用いる液晶表示装置
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
JP4302535B2 (ja) * 2002-04-08 2009-07-29 サムスン エレクトロニクス カンパニー リミテッド ゲート駆動回路及びこれを有する液晶表示装置
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
KR100846464B1 (ko) * 2002-05-28 2008-07-17 삼성전자주식회사 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법
WO2003107314A2 (en) 2002-06-01 2003-12-24 Samsung Electronics Co., Ltd. Method of driving a shift register, a shift register, a liquid crystal display device having the shift register
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
KR100870522B1 (ko) 2002-09-17 2008-11-26 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US7271784B2 (en) * 2002-12-18 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP4314843B2 (ja) 2003-03-05 2009-08-19 カシオ計算機株式会社 画像読取装置及び個人認証システム
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
KR100913303B1 (ko) * 2003-05-06 2009-08-26 삼성전자주식회사 액정표시장치
JP2004070300A (ja) * 2003-06-09 2004-03-04 Sharp Corp シフトレジスタ、および、それを用いた画像表示装置
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005064344A (ja) * 2003-08-18 2005-03-10 Seiko Epson Corp 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置及び電子機器
JP4152857B2 (ja) * 2003-10-06 2008-09-17 株式会社半導体エネルギー研究所 画像読み取り装置
KR101019045B1 (ko) 2003-11-25 2011-03-04 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
CN100385478C (zh) * 2003-12-27 2008-04-30 Lg.菲利浦Lcd株式会社 包括移位寄存器的驱动电路以及使用其的平板显示器件
KR101019337B1 (ko) 2004-03-12 2011-03-07 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
JP4628004B2 (ja) * 2004-03-26 2011-02-09 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
CN100444405C (zh) 2004-07-02 2008-12-17 中华映管股份有限公司 双栅级薄膜电晶体与像素结构及其制造方法
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
JP5053537B2 (ja) * 2004-11-10 2012-10-17 キヤノン株式会社 非晶質酸化物を利用した半導体デバイス
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
CN101057333B (zh) 2004-11-10 2011-11-16 佳能株式会社 发光器件
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CN101057338B (zh) 2004-11-10 2011-03-16 佳能株式会社 采用无定形氧化物的场效应晶体管
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US8003449B2 (en) 2004-11-26 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a reverse staggered thin film transistor
JP2006164477A (ja) * 2004-12-10 2006-06-22 Casio Comput Co Ltd シフトレジスタ、該シフトレジスタの駆動制御方法及び該シフトレジスタを備えた表示駆動装置
KR101066493B1 (ko) 2004-12-31 2011-09-21 엘지디스플레이 주식회사 쉬프트 레지스터
KR101191157B1 (ko) 2004-12-31 2012-10-15 엘지디스플레이 주식회사 액정표시장치의 구동부
KR20060079043A (ko) * 2004-12-31 2006-07-05 엘지.필립스 엘시디 주식회사 쉬프트 레지스터
KR101078454B1 (ko) * 2004-12-31 2011-10-31 엘지디스플레이 주식회사 잡음이 제거된 쉬프트레지스터구조 및 이를 구비한액정표시소자
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US7410842B2 (en) 2005-04-19 2008-08-12 Lg. Display Co., Ltd Method for fabricating thin film transistor of liquid crystal display device
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
NO323168B1 (no) 2005-07-11 2007-01-08 Kristin Hovden Bevegelsesaktivert enhet.
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
CN100502049C (zh) 2005-08-03 2009-06-17 友达光电股份有限公司 具有双栅极结构的非晶硅薄膜晶体管及其制造方法
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101358954B1 (ko) 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
JP5250929B2 (ja) 2005-11-30 2013-07-31 凸版印刷株式会社 トランジスタおよびその製造方法
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
WO2007080813A1 (en) * 2006-01-07 2007-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device having the same
JP5164383B2 (ja) * 2006-01-07 2013-03-21 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
KR20080108223A (ko) 2006-01-31 2008-12-12 이데미쓰 고산 가부시키가이샤 Ｔｆｔ 기판, 반사형 ｔｆｔ 기판 및 이들의 제조 방법
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
JP5015472B2 (ja) * 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP5110803B2 (ja) 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
JP2007250982A (ja) * 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
JP2007286150A (ja) * 2006-04-13 2007-11-01 Idemitsu Kosan Co Ltd 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
KR100801961B1 (ko) * 2006-05-26 2008-02-12 한국전자통신연구원 듀얼 게이트 유기트랜지스터를 이용한 인버터
JP5386069B2 (ja) * 2006-06-02 2014-01-15 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
JP5069950B2 (ja) * 2006-06-02 2012-11-07 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
KR101217555B1 (ko) 2006-06-28 2013-01-02 삼성전자주식회사 접합 전계 효과 박막 트랜지스터
TWI342544B (en) * 2006-06-30 2011-05-21 Wintek Corp Shift register
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
TWI585730B (zh) 2006-09-29 2017-06-01 半導體能源研究所股份有限公司 顯示裝置和電子裝置
JP5468196B2 (ja) * 2006-09-29 2014-04-09 株式会社半導体エネルギー研究所 半導体装置、表示装置及び液晶表示装置
JP5116277B2 (ja) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
JP4990034B2 (ja) 2006-10-03 2012-08-01 三菱電機株式会社 シフトレジスタ回路およびそれを備える画像表示装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7646015B2 (en) 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP5090008B2 (ja) * 2007-02-07 2012-12-05 三菱電機株式会社 半導体装置およびシフトレジスタ回路
KR101410926B1 (ko) 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
KR100858088B1 (ko) 2007-02-28 2008-09-10 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP5042077B2 (ja) * 2007-04-06 2012-10-03 株式会社半導体エネルギー研究所 表示装置
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
TWI476921B (zh) 2008-07-31 2015-03-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
CN103928476A (zh) 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101579050B1 (ko) 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20180137606A (ko) 2008-10-24 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR102556313B1 (ko) 2008-11-21 2023-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP2021105772A (ja) * 2019-12-26 2021-07-26 株式会社日立製作所 リソース利用量の予測管理システム、リソース利用量の予測管理方法

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200303008A (en) * 2002-02-04 2003-08-16 Iljin Diamond Co Ltd Liquid crystal display for using poly thin film transistor
JP2003273228A (ja) * 2002-03-15 2003-09-26 Casio Comput Co Ltd 半導体装置および表示駆動装置
JP2003309266A (ja) * 2002-04-17 2003-10-31 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子の製造方法
US20060054888A1 (en) * 2002-06-13 2006-03-16 Yoshihiro Ito Semiconductor device and method for manufacturing semiconductor device
US20050199959A1 (en) * 2004-03-12 2005-09-15 Chiang Hai Q. Semiconductor device
US20050275038A1 (en) * 2004-06-14 2005-12-15 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
TWI280664B (en) * 2004-06-24 2007-05-01 Chunghwa Picture Tubes Ltd Double gate thin film transistor, pixel structure, and fabrication method thereof
TWI299905B (en) * 2005-04-19 2008-08-11 Lg Display Co Ltd Method for fabricating thin film transistor of liquid crystal display device
US20060286737A1 (en) * 2005-06-16 2006-12-21 Levy David H Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
TWI250654B (en) * 2005-07-13 2006-03-01 Au Optronics Corp Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof
US20070054507A1 (en) * 2005-09-06 2007-03-08 Canon Kabushiki Kaisha Method of fabricating oxide semiconductor device
US20070063211A1 (en) * 2005-09-06 2007-03-22 Canon Kabushiki Kaisha Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
JP2007096055A (ja) * 2005-09-29 2007-04-12 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
TW200730985A (en) * 2005-10-05 2007-08-16 Idemitsu Kosan Co Thin film transistor substrate and manufacturing method thereof
TW200735371A (en) * 2005-12-02 2007-09-16 Idemitsu Kosan Co Thin film transistor substrate and thin film transistor substrate manufacturing method
TW200737526A (en) * 2006-01-31 2007-10-01 Idemitsu Kosan Co TFT substrate, reflective TFT substrate and method for manufacturing such substrates
TW200739919A (en) * 2006-02-09 2007-10-16 Idemitsu Kosan Co Reflective TFT substrate and method for manufacturing reflective TFT substrate
TWI295855B (en) * 2006-03-03 2008-04-11 Ind Tech Res Inst Double gate thin-film transistor and method for forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI745420B (zh) * 2017-08-25 2021-11-11 聯華電子股份有限公司 半導體結構

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