KR100291970B1 - 반도체디바이스및그제조방법 - Google Patents
반도체디바이스및그제조방법 Download PDFInfo
- Publication number
- KR100291970B1 KR100291970B1 KR1019940014175A KR19940014175A KR100291970B1 KR 100291970 B1 KR100291970 B1 KR 100291970B1 KR 1019940014175 A KR1019940014175 A KR 1019940014175A KR 19940014175 A KR19940014175 A KR 19940014175A KR 100291970 B1 KR100291970 B1 KR 100291970B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- semiconductor film
- forming
- patterned
- nickel
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims description 86
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 61
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 39
- 239000010408 film Substances 0.000 claims description 274
- 239000013078 crystal Substances 0.000 claims description 111
- 238000000034 method Methods 0.000 claims description 60
- 238000002425 crystallisation Methods 0.000 claims description 59
- 230000008025 crystallization Effects 0.000 claims description 59
- 239000010409 thin film Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 33
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 22
- 238000000059 patterning Methods 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 222
- 229910052759 nickel Inorganic materials 0.000 abstract description 106
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 56
- 229910052710 silicon Inorganic materials 0.000 description 55
- 239000010703 silicon Substances 0.000 description 55
- 239000010410 layer Substances 0.000 description 34
- 238000000137 annealing Methods 0.000 description 29
- 239000011521 glass Substances 0.000 description 27
- 239000012298 atmosphere Substances 0.000 description 18
- 230000004913 activation Effects 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 230000001737 promoting effect Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 241001422033 Thestylus Species 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 229910005889 NiSix Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- -1 i.e. Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/016—Catalyst
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/154—Solid phase epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP93-174736 | 1993-06-22 | ||
| JP17473693 | 1993-06-22 | ||
| JP5180754A JPH0786304A (ja) | 1993-06-25 | 1993-06-25 | 半導体装置の作製方法 |
| JP93-180754 | 1993-06-25 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970076174A Division KR100291974B1 (ko) | 1993-06-22 | 1997-12-29 | 반도체장치 및 그제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100291970B1 true KR100291970B1 (ko) | 2001-09-17 |
Family
ID=26496241
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940014175A KR100291970B1 (ko) | 1993-06-22 | 1994-06-22 | 반도체디바이스및그제조방법 |
| KR1019970076174A KR100291974B1 (ko) | 1993-06-22 | 1997-12-29 | 반도체장치 및 그제조방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970076174A KR100291974B1 (ko) | 1993-06-22 | 1997-12-29 | 반도체장치 및 그제조방법 |
Country Status (4)
Families Citing this family (192)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6975296B1 (en) * | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| CN1052569C (zh) * | 1992-08-27 | 2000-05-17 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
| US5403762A (en) | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
| TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
| US6323071B1 (en) * | 1992-12-04 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor device |
| US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
| CN1052110C (zh) * | 1993-02-15 | 2000-05-03 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
| JP3662263B2 (ja) * | 1993-02-15 | 2005-06-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5985741A (en) | 1993-02-15 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP3562588B2 (ja) * | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| US6413805B1 (en) | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
| TW241377B (US20020125480A1-20020912-P00900.png) | 1993-03-12 | 1995-02-21 | Semiconductor Energy Res Co Ltd | |
| JP3535205B2 (ja) * | 1993-03-22 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| US5501989A (en) * | 1993-03-22 | 1996-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer |
| KR100186886B1 (ko) * | 1993-05-26 | 1999-04-15 | 야마자끼 승페이 | 반도체장치 제작방법 |
| US5818076A (en) | 1993-05-26 | 1998-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
| US6090646A (en) | 1993-05-26 | 2000-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| KR100355938B1 (ko) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
| US6713330B1 (en) | 1993-06-22 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor |
| US5488000A (en) | 1993-06-22 | 1996-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer |
| TW369686B (en) * | 1993-07-27 | 1999-09-11 | Semiconductor Energy Lab Corp | Semiconductor device and process for fabricating the same |
| US5663077A (en) | 1993-07-27 | 1997-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films |
| JP2814049B2 (ja) | 1993-08-27 | 1998-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| KR100333153B1 (ko) | 1993-09-07 | 2002-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
| JPH07109573A (ja) * | 1993-10-12 | 1995-04-25 | Semiconductor Energy Lab Co Ltd | ガラス基板および加熱処理方法 |
| TW264575B (US20020125480A1-20020912-P00900.png) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| CN1156918C (zh) * | 1993-12-02 | 2004-07-07 | 株式会社半导体能源研究所 | 半导体器件 |
| US5654203A (en) * | 1993-12-02 | 1997-08-05 | Semiconductor Energy Laboratory, Co., Ltd. | Method for manufacturing a thin film transistor using catalyst elements to promote crystallization |
| US6798023B1 (en) | 1993-12-02 | 2004-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film |
| US5869362A (en) * | 1993-12-02 | 1999-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| TW272319B (US20020125480A1-20020912-P00900.png) * | 1993-12-20 | 1996-03-11 | Sharp Kk | |
| KR100319332B1 (ko) | 1993-12-22 | 2002-04-22 | 야마자끼 순페이 | 반도체장치및전자광학장치 |
| JP3221473B2 (ja) | 1994-02-03 | 2001-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100279217B1 (ko) * | 1994-04-13 | 2001-02-01 | 야마자끼 순페이 | 반도체 장치 형성 방법, 결정성 반도체 막 형성 방법, 박막 트랜지스터 형성 방법 및 반도체 장치 제조 방법 |
| US6974763B1 (en) | 1994-04-13 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming semiconductor device by crystallizing amorphous silicon and forming crystallization promoting material in the same chamber |
| US6326248B1 (en) | 1994-06-02 | 2001-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor device |
| JP3621151B2 (ja) * | 1994-06-02 | 2005-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3067949B2 (ja) * | 1994-06-15 | 2000-07-24 | シャープ株式会社 | 電子装置および液晶表示装置 |
| KR100306527B1 (ko) * | 1994-06-15 | 2002-06-26 | 구사마 사부로 | 박막반도체장치의제조방법,박막반도체장치 |
| TW273639B (en) * | 1994-07-01 | 1996-04-01 | Handotai Energy Kenkyusho Kk | Method for producing semiconductor device |
| JPH0869967A (ja) * | 1994-08-26 | 1996-03-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| TW403993B (en) * | 1994-08-29 | 2000-09-01 | Semiconductor Energy Lab | Semiconductor circuit for electro-optical device and method of manufacturing the same |
| US6706572B1 (en) * | 1994-08-31 | 2004-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor using a high pressure oxidation step |
| JP3442500B2 (ja) | 1994-08-31 | 2003-09-02 | 株式会社半導体エネルギー研究所 | 半導体回路の作製方法 |
| TW374247B (en) * | 1994-09-15 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Method of fabricating semiconductor device |
| US6670640B1 (en) * | 1994-09-15 | 2003-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| US6242289B1 (en) | 1995-09-08 | 2001-06-05 | Semiconductor Energy Laboratories Co., Ltd. | Method for producing semiconductor device |
| US5712191A (en) * | 1994-09-16 | 1998-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| US5915174A (en) * | 1994-09-30 | 1999-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for producing the same |
| US6300659B1 (en) | 1994-09-30 | 2001-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and fabrication method for same |
| US5942768A (en) | 1994-10-07 | 1999-08-24 | Semionductor Energy Laboratory Co., Ltd. | Semiconductor device having improved crystal orientation |
| TW297950B (US20020125480A1-20020912-P00900.png) | 1994-12-16 | 1997-02-11 | Handotai Energy Kenkyusho Kk | |
| JP3469337B2 (ja) * | 1994-12-16 | 2003-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4130237B2 (ja) * | 1995-01-28 | 2008-08-06 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及び半導体装置の作製方法 |
| US7348227B1 (en) * | 1995-03-23 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR100265179B1 (ko) | 1995-03-27 | 2000-09-15 | 야마자끼 순페이 | 반도체장치와 그의 제작방법 |
| US6933182B1 (en) | 1995-04-20 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device and manufacturing system thereof |
| TW463378B (en) | 1995-06-01 | 2001-11-11 | Semiconductor Energy Lab | Method of manufacturing semiconductor device |
| JP4056571B2 (ja) * | 1995-08-02 | 2008-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3295679B2 (ja) * | 1995-08-04 | 2002-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6444506B1 (en) * | 1995-10-25 | 2002-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation |
| TW439003B (en) * | 1995-11-17 | 2001-06-07 | Semiconductor Energy Lab | Display device |
| US6800875B1 (en) | 1995-11-17 | 2004-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-luminescent display device with an organic leveling layer |
| JPH09146108A (ja) * | 1995-11-17 | 1997-06-06 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその駆動方法 |
| JP3907726B2 (ja) | 1995-12-09 | 2007-04-18 | 株式会社半導体エネルギー研究所 | 微結晶シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法 |
| JP3124480B2 (ja) * | 1995-12-12 | 2001-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW309633B (US20020125480A1-20020912-P00900.png) | 1995-12-14 | 1997-07-01 | Handotai Energy Kenkyusho Kk | |
| TW319912B (US20020125480A1-20020912-P00900.png) * | 1995-12-15 | 1997-11-11 | Handotai Energy Kenkyusho Kk | |
| US6204101B1 (en) | 1995-12-15 | 2001-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP3645379B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3645380B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
| JP3729955B2 (ja) | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6478263B1 (en) * | 1997-01-17 | 2002-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| JP3645378B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5985740A (en) * | 1996-01-19 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including reduction of a catalyst |
| US5888858A (en) | 1996-01-20 | 1999-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| US6180439B1 (en) | 1996-01-26 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device |
| US7056381B1 (en) | 1996-01-26 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of semiconductor device |
| US6465287B1 (en) | 1996-01-27 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization |
| US6063654A (en) * | 1996-02-20 | 2000-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor involving laser treatment |
| TW317643B (US20020125480A1-20020912-P00900.png) * | 1996-02-23 | 1997-10-11 | Handotai Energy Kenkyusho Kk | |
| TW335503B (en) * | 1996-02-23 | 1998-07-01 | Semiconductor Energy Lab Kk | Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method |
| TW374196B (en) | 1996-02-23 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same |
| JP3472024B2 (ja) | 1996-02-26 | 2003-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6100562A (en) * | 1996-03-17 | 2000-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US5602047A (en) * | 1996-06-13 | 1997-02-11 | Industrial Technology Research Institute | Process for polysilicon thin film transistors using backside irradiation and plasma doping |
| US6133119A (en) | 1996-07-08 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method manufacturing same |
| US6188452B1 (en) * | 1996-07-09 | 2001-02-13 | Lg Electronics, Inc | Active matrix liquid crystal display and method of manufacturing same |
| US5773329A (en) * | 1996-07-24 | 1998-06-30 | International Business Machines Corporation | Polysilicon grown by pulsed rapid thermal annealing |
| JPH10199807A (ja) | 1996-12-27 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 結晶性珪素膜の作製方法 |
| JPH10200114A (ja) * | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 薄膜回路 |
| US6764928B1 (en) * | 1997-02-20 | 2004-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an El display device |
| JP4242461B2 (ja) | 1997-02-24 | 2009-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH10282414A (ja) * | 1997-04-09 | 1998-10-23 | Canon Inc | ズームレンズ |
| JP3376247B2 (ja) * | 1997-05-30 | 2003-02-10 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置 |
| US6541793B2 (en) | 1997-05-30 | 2003-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and semiconductor device using thin-film transistors |
| US6307214B1 (en) | 1997-06-06 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
| JP3844561B2 (ja) | 1997-06-10 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6501094B1 (en) * | 1997-06-11 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a bottom gate type thin film transistor |
| JP3717634B2 (ja) * | 1997-06-17 | 2005-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3295346B2 (ja) | 1997-07-14 | 2002-06-24 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ |
| JP3830623B2 (ja) | 1997-07-14 | 2006-10-04 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
| US6326226B1 (en) | 1997-07-15 | 2001-12-04 | Lg. Philips Lcd Co., Ltd. | Method of crystallizing an amorphous film |
| US5940693A (en) * | 1997-07-15 | 1999-08-17 | Sharp Laboratories Of America, Inc. | Selective silicide thin-film transistor and method for same |
| JP3754184B2 (ja) | 1997-07-16 | 2006-03-08 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタを備えたフラットパネルディスプレイの作製方法 |
| JP3939399B2 (ja) * | 1997-07-22 | 2007-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH1140498A (ja) | 1997-07-22 | 1999-02-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP4318768B2 (ja) * | 1997-07-23 | 2009-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4180689B2 (ja) * | 1997-07-24 | 2008-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5950078A (en) * | 1997-09-19 | 1999-09-07 | Sharp Laboratories Of America, Inc. | Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates |
| KR100269312B1 (ko) * | 1997-10-14 | 2000-10-16 | 윤종용 | 실리콘막의결정화방법및이를이용한박막트랜지스터-액정표시장치(tft-lcd)의제조방법 |
| KR100340124B1 (ko) | 1998-02-10 | 2003-01-29 | 주승기 | 박막트랜지스터 제조방법 |
| US6060392A (en) * | 1998-02-11 | 2000-05-09 | National Semiconductor Corporation | Fabrication of silicides by excimer laser annealing of amorphous silicon |
| US6312979B1 (en) | 1998-04-28 | 2001-11-06 | Lg.Philips Lcd Co., Ltd. | Method of crystallizing an amorphous silicon layer |
| US6228693B1 (en) * | 1998-06-05 | 2001-05-08 | Sharp Laboratories Of America, Inc. | Selected site, metal-induced, continuous crystallization method |
| US6524662B2 (en) | 1998-07-10 | 2003-02-25 | Jin Jang | Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof |
| JP2000058839A (ja) | 1998-08-05 | 2000-02-25 | Semiconductor Energy Lab Co Ltd | 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法 |
| US6784034B1 (en) | 1998-10-13 | 2004-08-31 | Lg. Philips Lcd Co., Ltd. | Method for fabricating a thin film transistor |
| US6558986B1 (en) | 1998-09-03 | 2003-05-06 | Lg.Philips Lcd Co., Ltd | Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method |
| JP2000174282A (ja) | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US6475836B1 (en) * | 1999-03-29 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR100317641B1 (ko) | 1999-05-21 | 2001-12-22 | 구본준, 론 위라하디락사 | 박막 트랜지스터 및 그 제조방법 |
| US7339996B2 (en) | 1999-06-24 | 2008-03-04 | Intel Corporation | Receiver codec super set constellation generator |
| JP3579316B2 (ja) * | 1999-10-19 | 2004-10-20 | 三洋電機株式会社 | 半導体装置の製造方法 |
| US7098084B2 (en) * | 2000-03-08 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US6432804B1 (en) * | 2000-05-22 | 2002-08-13 | Sharp Laboratories Of America, Inc. | Sputtered silicon target for fabrication of polysilicon thin film transistors |
| KR100439345B1 (ko) | 2000-10-31 | 2004-07-07 | 피티플러스(주) | 폴리실리콘 활성층을 포함하는 박막트랜지스터 및 제조 방법 |
| KR100390522B1 (ko) | 2000-12-01 | 2003-07-07 | 피티플러스(주) | 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법 |
| US7045444B2 (en) * | 2000-12-19 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device that includes selectively adding a noble gas element |
| US7015422B2 (en) | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| US6858480B2 (en) | 2001-01-18 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| TWI221645B (en) * | 2001-01-19 | 2004-10-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US7151017B2 (en) * | 2001-01-26 | 2006-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US6770518B2 (en) * | 2001-01-29 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| US7115453B2 (en) * | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| JP2002231627A (ja) * | 2001-01-30 | 2002-08-16 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
| US7141822B2 (en) * | 2001-02-09 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP4993810B2 (ja) | 2001-02-16 | 2012-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5088993B2 (ja) * | 2001-02-16 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| SG114529A1 (en) * | 2001-02-23 | 2005-09-28 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| SG114530A1 (en) | 2001-02-28 | 2005-09-28 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US6830994B2 (en) * | 2001-03-09 | 2004-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a crystallized semiconductor film |
| JP4718700B2 (ja) | 2001-03-16 | 2011-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7052943B2 (en) | 2001-03-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US6812081B2 (en) * | 2001-03-26 | 2004-11-02 | Semiconductor Energy Laboratory Co.,.Ltd. | Method of manufacturing semiconductor device |
| TWI291729B (en) | 2001-11-22 | 2007-12-21 | Semiconductor Energy Lab | A semiconductor fabricating apparatus |
| JP2003163221A (ja) * | 2001-11-28 | 2003-06-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| TWI267145B (en) * | 2001-11-30 | 2006-11-21 | Semiconductor Energy Lab | Manufacturing method for a semiconductor device |
| US7133737B2 (en) | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
| US7214573B2 (en) * | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
| KR100477102B1 (ko) * | 2001-12-19 | 2005-03-17 | 삼성에스디아이 주식회사 | 금속유도화 측면결정화방법을 이용한 멀티플 게이트씨모스 박막 트랜지스터 및 그의 제조방법 |
| KR100477103B1 (ko) * | 2001-12-19 | 2005-03-18 | 삼성에스디아이 주식회사 | 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법 |
| JP3992976B2 (ja) * | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4030758B2 (ja) * | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7374976B2 (en) * | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
| JP4059095B2 (ja) * | 2003-02-07 | 2008-03-12 | セイコーエプソン株式会社 | 相補型薄膜トランジスタ回路、電気光学装置、電子機器 |
| KR100947525B1 (ko) * | 2003-03-12 | 2010-03-12 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 이의 제조방법 |
| US7348222B2 (en) * | 2003-06-30 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device |
| US7358165B2 (en) * | 2003-07-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing semiconductor device |
| US7247527B2 (en) * | 2003-07-31 | 2007-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, and laser irradiation apparatus |
| WO2005059971A2 (en) * | 2003-12-15 | 2005-06-30 | Koninklijke Philips Electronics N.V. | Active matrix pixel device with photo sensor |
| US6897118B1 (en) | 2004-02-11 | 2005-05-24 | Chartered Semiconductor Manufacturing Ltd. | Method of multiple pulse laser annealing to activate ultra-shallow junctions |
| US7459379B2 (en) * | 2004-03-26 | 2008-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR20050106256A (ko) * | 2004-05-04 | 2005-11-09 | 네오폴리((주)) | 금속유도측면결정화를 이용한 박막 트랜지스터의 제조방법 |
| US7705090B2 (en) * | 2004-08-20 | 2010-04-27 | Chevron Oronite Company Llc | Method for preparing polyolefins containing a high percentage of exo-olefin chain ends |
| WO2006023988A2 (en) * | 2004-08-20 | 2006-03-02 | Chevron Oronite Company Llc | Method for preparation of polyolefins containing exo-olefin chain ends |
| WO2006023742A2 (en) * | 2004-08-20 | 2006-03-02 | Chevron Oronite Company Llc | Method for preparation of polyolefins containing exo-olefin chain ends |
| US7381600B2 (en) * | 2004-12-02 | 2008-06-03 | The Hong Kong University Of Science And Technology | Method of annealing polycrystalline silicon using solid-state laser and devices built thereon |
| KR100653853B1 (ko) * | 2005-05-24 | 2006-12-05 | 네오폴리((주)) | 비금속 씨드 에피 성장을 이용한 비정질 반도체 박막의결정화 방법 및 이를 이용한 다결정 박막 트랜지스터의제조방법 |
| US7279426B2 (en) * | 2005-09-22 | 2007-10-09 | International Business Machines Corporation | Like integrated circuit devices with different depth |
| CN1975989B (zh) * | 2005-12-01 | 2010-09-29 | 香港科技大学 | 多晶硅薄膜的制备方法，用该方法制备的多晶硅和薄膜晶体管 |
| US8013073B2 (en) * | 2005-12-30 | 2011-09-06 | Chevron Oronite Company Llc | Method for preparing polyolefins containing vinylidine end groups using nonaromatic heterocyclic compounds |
| US7501476B2 (en) * | 2005-12-30 | 2009-03-10 | Chevron Oronite Company, Llc | Method for preparing polyolefins containing vinylidene end groups using azole compounds |
| US7816459B2 (en) * | 2005-12-30 | 2010-10-19 | Chevron Oronite Company Llc | Method for preparing polyolefins containing vinylidine end groups using polymeric nitrogen compounds |
| KR20080065460A (ko) * | 2007-01-09 | 2008-07-14 | 엘지전자 주식회사 | 수평 금속 유도 결정화를 이용한 저온 다결정 실리콘광기전력 변환소자의 제조방법 |
| US7754600B2 (en) * | 2007-03-01 | 2010-07-13 | Hewlett-Packard Development Company, L.P. | Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices |
| TWI348770B (en) * | 2007-09-28 | 2011-09-11 | Au Optronics Corp | Light sensor |
| US8394897B2 (en) * | 2008-03-25 | 2013-03-12 | Chevron Oronite Company Llc | Production of vinylidene-terminated polyolefins via quenching with monosulfides |
| JP5096572B2 (ja) * | 2008-05-29 | 2012-12-12 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US8063154B2 (en) | 2008-06-24 | 2011-11-22 | The University Of Southern Mississippi | Preparation of exo-olefin terminated polyolefins via quenching with alkoxysilanes or ethers |
| US8133954B2 (en) | 2008-10-22 | 2012-03-13 | Chevron Oronite Company Llc | Production of vinylidene-terminated and sulfide-terminated telechelic polyolefins via quenching with disulfides |
| US7888224B2 (en) * | 2008-11-14 | 2011-02-15 | Nanyang Technological University | Method for forming a shallow junction region using defect engineering and laser annealing |
| US8344073B2 (en) | 2009-01-16 | 2013-01-01 | The University Of Southern Mississippi | Functionalization of polyolefins with phenoxy derivatives |
| US8592527B2 (en) | 2010-06-14 | 2013-11-26 | University Of Southern Mississippi | Vinyl ether end-functionalized polyolefins |
| CN102610519A (zh) * | 2011-01-19 | 2012-07-25 | 广东中显科技有限公司 | 多晶硅薄膜晶体管的制造方法 |
| TW201245829A (en) * | 2011-05-05 | 2012-11-16 | Au Optronics Corp | Pixel structure and method for fabricating the same |
| WO2018111247A1 (en) | 2016-12-13 | 2018-06-21 | Intel Corporation | Passivation dielectrics for oxide semiconductor thin film transistors |
| KR101959754B1 (ko) * | 2018-02-27 | 2019-03-19 | 한국과학기술원 | 비냉각형 적외선 센서용 감지막 형성방법과 그에 따라 형성된 비냉각형 적외선 센서용 감지막 및 비냉각형 적외선 센서 제조방법과 그에 따라 제조된 적외선 센서 |
| CN109727875A (zh) * | 2018-12-25 | 2019-05-07 | 惠科股份有限公司 | 一种薄膜晶体管的制作方法和显示面板 |
| US11616057B2 (en) | 2019-03-27 | 2023-03-28 | Intel Corporation | IC including back-end-of-line (BEOL) transistors with crystalline channel material |
| JP7341052B2 (ja) * | 2019-12-26 | 2023-09-08 | 東京エレクトロン株式会社 | 膜形成方法及び膜形成装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0329316A (ja) * | 1989-06-26 | 1991-02-07 | Canon Inc | 半導体薄膜の形成方法 |
| JPH0491425A (ja) * | 1990-08-02 | 1992-03-24 | Fujitsu Ltd | 半導体装置の製造方法 |
Family Cites Families (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE28385E (en) | 1968-03-20 | 1975-04-08 | Method of treating semiconductor devices | |
| US3556880A (en) | 1968-04-11 | 1971-01-19 | Rca Corp | Method of treating semiconductor devices to improve lifetime |
| US4226898A (en) | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| US4309224A (en) | 1978-10-06 | 1982-01-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
| US4231809A (en) | 1979-05-25 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Method of removing impurity metals from semiconductor devices |
| DE2932569C2 (de) | 1979-08-10 | 1983-04-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Reduzierung der Dichte der schnellen Oberflächenzustände bei MOS-Bauelementen |
| US4300989A (en) | 1979-10-03 | 1981-11-17 | Bell Telephone Laboratories, Incorporated | Fluorine enhanced plasma growth of native layers on silicon |
| JPS56108231A (en) | 1980-02-01 | 1981-08-27 | Ushio Inc | Annealing method of semiconductor wafer |
| US4379020A (en) | 1980-06-16 | 1983-04-05 | Massachusetts Institute Of Technology | Polycrystalline semiconductor processing |
| US5262350A (en) | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
| JPS57194518A (en) | 1981-05-27 | 1982-11-30 | Toshiba Corp | Manufacture of polycrystalline silicon |
| JPS5840820A (ja) | 1981-09-03 | 1983-03-09 | Nec Corp | シリコン単結晶膜形成法 |
| AT380974B (de) | 1982-04-06 | 1986-08-11 | Shell Austria | Verfahren zum gettern von halbleiterbauelementen |
| JPS60105216A (ja) | 1983-11-11 | 1985-06-10 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
| US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| JPH0614540B2 (ja) | 1984-09-04 | 1994-02-23 | 工業技術院長 | 半導体薄膜結晶層の製造方法 |
| JPS6178120A (ja) | 1984-09-25 | 1986-04-21 | Sony Corp | 薄膜単結晶の製造方法 |
| EP0178447B1 (en) * | 1984-10-09 | 1993-02-17 | Fujitsu Limited | A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology |
| JPS61116820A (ja) | 1984-11-13 | 1986-06-04 | Fujitsu Ltd | 半導体のアニ−ル方法 |
| US5296405A (en) | 1985-08-02 | 1994-03-22 | Semiconductor Energy Laboratory Co.., Ltd. | Method for photo annealing non-single crystalline semiconductor films |
| US5753542A (en) * | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
| US5221423A (en) | 1986-05-20 | 1993-06-22 | Fujitsu Limited | Process for cleaning surface of semiconductor substrate |
| JPS62298151A (ja) | 1986-06-18 | 1987-12-25 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JPS63211759A (ja) | 1987-02-27 | 1988-09-02 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| US5248630A (en) * | 1987-07-27 | 1993-09-28 | Nippon Telegraph And Telephone Corporation | Thin film silicon semiconductor device and process for producing thereof |
| JPH01187875A (ja) | 1988-01-22 | 1989-07-27 | Seiko Epson Corp | 半導体素子の製造方法 |
| JP2623276B2 (ja) | 1988-01-22 | 1997-06-25 | 株式会社日立製作所 | 薄膜半導体装置の製造方法 |
| US5225355A (en) | 1988-02-26 | 1993-07-06 | Fujitsu Limited | Gettering treatment process |
| US5043224A (en) | 1988-05-12 | 1991-08-27 | Lehigh University | Chemically enhanced thermal oxidation and nitridation of silicon and products thereof |
| JPH02140915A (ja) | 1988-11-22 | 1990-05-30 | Seiko Epson Corp | 半導体装置の製造方法 |
| EP0390608B1 (en) | 1989-03-31 | 1999-06-09 | Canon Kabushiki Kaisha | Method for forming semiconductor thin-film and resulting semiconductor thin-film |
| US5200630A (en) | 1989-04-13 | 1993-04-06 | Sanyo Electric Co., Ltd. | Semiconductor device |
| US5278093A (en) | 1989-09-23 | 1994-01-11 | Canon Kabushiki Kaisha | Method for forming semiconductor thin film |
| JPH03284831A (ja) | 1990-03-30 | 1991-12-16 | Kyocera Corp | 半導体薄膜の形成方法 |
| DE69125886T2 (de) | 1990-05-29 | 1997-11-20 | Semiconductor Energy Lab | Dünnfilmtransistoren |
| US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
| JPH0492413A (ja) * | 1990-08-08 | 1992-03-25 | Canon Inc | 結晶薄膜の成長方法 |
| JP2973492B2 (ja) | 1990-08-22 | 1999-11-08 | ソニー株式会社 | 半導体薄膜の結晶化方法 |
| JP2838318B2 (ja) | 1990-11-30 | 1998-12-16 | 株式会社半導体エネルギー研究所 | 感光装置及びその作製方法 |
| JP2999271B2 (ja) * | 1990-12-10 | 2000-01-17 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2794678B2 (ja) | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
| JPH0824104B2 (ja) * | 1991-03-18 | 1996-03-06 | 株式会社半導体エネルギー研究所 | 半導体材料およびその作製方法 |
| US5946561A (en) * | 1991-03-18 | 1999-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| JPH05182923A (ja) | 1991-05-28 | 1993-07-23 | Semiconductor Energy Lab Co Ltd | レーザーアニール方法 |
| JP3255942B2 (ja) | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
| US5545571A (en) * | 1991-08-26 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making TFT with anodic oxidation process using positive and negative voltages |
| JPH0582442A (ja) | 1991-09-18 | 1993-04-02 | Sony Corp | 多結晶半導体薄膜の製造方法 |
| US5766344A (en) * | 1991-09-21 | 1998-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor |
| JPH05109737A (ja) | 1991-10-18 | 1993-04-30 | Casio Comput Co Ltd | 薄膜トランジスタの製造方法 |
| US5244819A (en) | 1991-10-22 | 1993-09-14 | Honeywell Inc. | Method to getter contamination in semiconductor devices |
| US5424230A (en) | 1992-02-19 | 1995-06-13 | Casio Computer Co., Ltd. | Method of manufacturing a polysilicon thin film transistor |
| US5254480A (en) | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
| JP2779289B2 (ja) * | 1992-05-11 | 1998-07-23 | シャープ株式会社 | 薄膜トランジスタの製造方法 |
| US5288662A (en) | 1992-06-15 | 1994-02-22 | Air Products And Chemicals, Inc. | Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning |
| US5300187A (en) | 1992-09-03 | 1994-04-05 | Motorola, Inc. | Method of removing contaminants |
| JP3165304B2 (ja) | 1992-12-04 | 2001-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法及び半導体処理装置 |
| TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
| US5843225A (en) | 1993-02-03 | 1998-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor and process for fabricating semiconductor device |
| JP3562588B2 (ja) | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| JP3662263B2 (ja) | 1993-02-15 | 2005-06-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN1052110C (zh) | 1993-02-15 | 2000-05-03 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
| US5275851A (en) * | 1993-03-03 | 1994-01-04 | The Penn State Research Foundation | Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates |
| TW241377B (US20020125480A1-20020912-P00900.png) | 1993-03-12 | 1995-02-21 | Semiconductor Energy Res Co Ltd | |
| JP3193803B2 (ja) * | 1993-03-12 | 2001-07-30 | 株式会社半導体エネルギー研究所 | 半導体素子の作製方法 |
| KR100355938B1 (ko) | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
| US5366926A (en) | 1993-06-07 | 1994-11-22 | Xerox Corporation | Low temperature process for laser dehydrogenation and crystallization of amorphous silicon |
| JP3450376B2 (ja) | 1993-06-12 | 2003-09-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5488000A (en) | 1993-06-22 | 1996-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer |
| US5985704A (en) | 1993-07-27 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| TW369686B (en) | 1993-07-27 | 1999-09-11 | Semiconductor Energy Lab Corp | Semiconductor device and process for fabricating the same |
| US5492843A (en) | 1993-07-31 | 1996-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device and method of processing substrate |
| TW279275B (US20020125480A1-20020912-P00900.png) | 1993-12-27 | 1996-06-21 | Sharp Kk | |
| JP3254072B2 (ja) * | 1994-02-15 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW273639B (en) * | 1994-07-01 | 1996-04-01 | Handotai Energy Kenkyusho Kk | Method for producing semiconductor device |
-
1994
- 1994-06-14 US US08/260,413 patent/US5488000A/en not_active Expired - Lifetime
- 1994-06-17 TW TW083105532A patent/TW253979B/zh not_active IP Right Cessation
- 1994-06-22 CN CN94108851A patent/CN1052571C/zh not_active Expired - Fee Related
- 1994-06-22 CN CNB991181115A patent/CN1156887C/zh not_active Expired - Lifetime
- 1994-06-22 KR KR1019940014175A patent/KR100291970B1/ko not_active IP Right Cessation
-
1997
- 1997-07-21 US US08/897,363 patent/US6319761B1/en not_active Expired - Lifetime
- 1997-12-29 KR KR1019970076174A patent/KR100291974B1/ko not_active IP Right Cessation
-
1999
- 1999-08-19 CN CNB991180569A patent/CN1139104C/zh not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0329316A (ja) * | 1989-06-26 | 1991-02-07 | Canon Inc | 半導体薄膜の形成方法 |
| JPH0491425A (ja) * | 1990-08-02 | 1992-03-24 | Fujitsu Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1156887C (zh) | 2004-07-07 |
| US5488000A (en) | 1996-01-30 |
| US6319761B1 (en) | 2001-11-20 |
| CN1283868A (zh) | 2001-02-14 |
| CN1139104C (zh) | 2004-02-18 |
| CN1255731A (zh) | 2000-06-07 |
| CN1102908A (zh) | 1995-05-24 |
| KR100291974B1 (ko) | 2001-11-22 |
| TW253979B (US20020125480A1-20020912-P00900.png) | 1995-08-11 |
| CN1052571C (zh) | 2000-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100291970B1 (ko) | 반도체디바이스및그제조방법 | |
| KR100297318B1 (ko) | 반도체장치제작방법 | |
| US6051453A (en) | Process for fabricating semiconductor device | |
| KR100186886B1 (ko) | 반도체장치 제작방법 | |
| KR100310407B1 (ko) | 반도체장치및그제조방법 | |
| KR0171437B1 (ko) | 반도체 회로 및 그 제조 방법 | |
| KR100228231B1 (ko) | 반도체 장치 및 그 제조방법 | |
| US5637515A (en) | Method of making thin film transistor using lateral crystallization | |
| KR100355938B1 (ko) | 반도체장치제작방법 | |
| KR100297878B1 (ko) | 반도체장치제작방법 | |
| US5851860A (en) | Semiconductor device and method for producing the same | |
| KR100209198B1 (ko) | 반도체장치 및 그 제조방법 | |
| JP3138169B2 (ja) | 半導体装置の製造方法 | |
| JPH07231098A (ja) | 半導体装置の作製方法 | |
| US7186601B2 (en) | Method of fabricating a semiconductor device utilizing a catalyst material solution | |
| KR100389561B1 (ko) | 반도체 장치의 제조방법 | |
| KR20030051501A (ko) | 반도체 장치 및 그의 제조 방법 | |
| JPH0897137A (ja) | 半導体装置およびその製造方法 | |
| US6713330B1 (en) | Method of fabricating a thin film transistor | |
| JPH07131034A (ja) | 半導体装置の作製方法 | |
| KR0180573B1 (ko) | 반도체 장치 및 그 제작방법 | |
| JPH08339960A (ja) | 半導体装置の作製方法 | |
| JP3949639B2 (ja) | 半導体装置の作製方法 | |
| JP3512550B2 (ja) | 半導体装置の作製方法 | |
| US20040155246A1 (en) | Semiconductor film and method of forming the same, and semiconductor device and display apparatus using the semiconductor film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20120220 Year of fee payment: 12 |
|
| LAPS | Lapse due to unpaid annual fee |