JPWO2011118108A1 - シリコーン樹脂製反射基材、その製造方法、及びその反射基材に用いる原材料組成物 - Google Patents
シリコーン樹脂製反射基材、その製造方法、及びその反射基材に用いる原材料組成物 Download PDFInfo
- Publication number
- JPWO2011118108A1 JPWO2011118108A1 JP2012506781A JP2012506781A JPWO2011118108A1 JP WO2011118108 A1 JPWO2011118108 A1 JP WO2011118108A1 JP 2012506781 A JP2012506781 A JP 2012506781A JP 2012506781 A JP2012506781 A JP 2012506781A JP WO2011118108 A1 JPWO2011118108 A1 JP WO2011118108A1
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- Prior art keywords
- silicone resin
- reflective
- raw material
- inorganic filler
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 239000002994 raw material Substances 0.000 title claims description 120
- 239000000758 substrate Substances 0.000 title claims description 108
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- 239000000463 material Substances 0.000 claims abstract description 131
- 239000000843 powder Substances 0.000 claims abstract description 88
- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 85
- 239000011256 inorganic filler Substances 0.000 claims abstract description 78
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 78
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 134
- -1 polysiloxane Polymers 0.000 claims description 109
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 102
- 229920001296 polysiloxane Polymers 0.000 claims description 51
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- 238000010438 heat treatment Methods 0.000 claims description 34
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
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- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 4
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- 238000001723 curing Methods 0.000 description 13
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Abstract
Description
R1 aSiO(4−a)/2
(式中、R1は非置換又は置換一価炭化水素基で、好ましくは炭素数1〜10、特に1〜8のものである。aは0.8〜2、特に1〜1.8の正数である。)
で示されるものが挙げられる。ここで、Rとしてはメチル基、エチル基、プロピル基、ブチル基等のアルキル基、ビニル基、アリル基、ブテニル基等のアルケニル基、フェニル基、トリル基等のアリール基、ベンジル基等のアラルキル基や、これらの炭素原子に結合した水素原子の一部又は全部がハロゲン原子で置換されたクロロメチル基、クロロプロピル基、3,3,3−トリフルオロプロピル基等のハロゲン置換炭化水素基、或いはシアノ基で置換された2−シアノエチル基等のシアノ基置換炭化水素基などが挙げられ、R1は同一であっても異なっていてもよいが、R1としてメチル基、特にジメチルシロキシ基を主成分となるようなメチル基であるものが、反射性発現、耐熱性・耐久性等の観点から好ましい。
R2-[Si(R3)2-O]b-[Si(R3)(R4)-O]c-R2
(R2は同一又は異なり前記R1で例示されたメチル基等の飽和炭化水素基若しくはフェニル基等の芳香族炭化水素基又は前記R1で例示されたアルケニル基、R3は同一又は異なり前記R1で例示された飽和炭化水素基若しくは芳香族炭化水素基、R4は前記R1で例示されたアルケニル基、b、cは正数)で模式的に示されるもので、ブロック共重合であってもランダム共重合であってもよいものである。
HdR5 eSiO(4-d-e)/2
(式中、R5はR1で例示された基、特に飽和炭化水素基、d及びeは、0<d<2、0.8≦e≦2となる数)で表されるものである。
具体的には、このようなオルガノハイドロジェンポリシロキサンの例としては、1,1,3,3−テトラメチルジシロキサン、1,3,5,7−テトラメチルテトラシクロシロキサン、1,3,5,7,8−ペンタメチルペンタシクロシロキサン等の末端にSi−H基を有するシロキサンオリゴマー;トリメチルシロキシ末端基含有メチルハイドロジェンポリシロキサン、トリメチルシロキシ末端基含有ジメチルシロキサン・メチルハイドロジェンシロキサン共重合体、シラノール末端基含有メチルハイドロジェンポリシロキサン、シラノール末端基含有ジメチルシロキサン・メチルハイドロジェンシロキサン共重合体、ジメチルハイドロジェンシロキシ末端基含有ジメチルポリシロキサン、ジメチルハイドロジェンシロキシ末端基含有メチルハイドロジェンポリシロキサン、ジメチルハイドロジェンシロキシ末端基含有ジメチルシロキサン・メチルハイドロジェンシロキサン共重合体のような主鎖の途中にSi−H基を有するホモポリマー又はコポリマーのハイドロジェンポリシロキサンが挙げられる。このようなオルガノハイドロジェンポリシロキサンは、R5 2(H)SiO1/2単位とSiO4/2単位とを含み、R5 3SiO1/2単位、R5 2SiO2/2単位、R5(H)SiO2/2単位、(H)SiO3/2単位又はR5SiO3/2単位を含んでいてもよいものである。
初期反射率の比較
(ポリフェニルシロキサン樹脂とポリジメチルシロキサン樹脂との比較)
ポリフェニルシロキサン樹脂(商品名XE14−C2508:モメンティブ・パフォーマンス・マテリアルズ)とポリジメチルシロキサン樹脂(商品名IVSM4500:モメンティブ・パフォーマンス・マテリアルズ社製)を用いて、アナターゼ型酸化チタン(商品名A−950:堺化学工業株式会社製)とルチル型酸化チタン(商品名GTR−100;堺化学工業株式会社製)とアルミナ(商品名AES12:住友化学株式会社製)を各々200質量部添加し、25μmのポリイミドを支持体に加熱プレスにて、150℃で10分間の硬化条件によって、縦70mm、横70mm、厚さ0.3mmのシリコーン白色反射板であるシリコーン樹脂製反射基材を作製した。それぞれの反射率を、分光光度計UV−3150(株式会社島津製作所製)を用いて測定した。その結果を示す図11よりすべてにおいてポリジメチルシロキサンをベースポリマーとした場合3〜5%の反射率の向上が見られた。
高温での経時後の反射率
ポリフェニルシロキサン樹脂(商品名XE14−C2508:モメンティブ・パフォーマンス・マテリアルズ)とポリジメチルシロキサン樹脂(商品名IVSM4500:モメンティブ・パフォーマンス・マテリアルズ社製)にアナターゼ型酸化チタン(商品名A−950:堺化学工業株式会社製)とルチル型酸化チタン(商品名GTR−100;堺化学工業株式会社製)をそれぞれ200質量部添加し、加熱プレスにて、25μmのポリイミドの支持体に150℃で10分間の硬化条件によって反射層を形成し、縦70mm、横70mm、厚さ0.3mmのシリコーン白色反射板であるシリコーン樹脂製反射基材を作製した。150℃で1000時間、加熱経過後の反射率を、分光光度計UV−3150(株式会社島津製作所製)を用いて測定した。その結果を示す図12より、ポリフェニルシロキサン樹脂のシリコーン白色反射板は短波長側で反射率の低下が見られるのに対し、ポリジメチルシロキサン樹脂のシリコーン白色反射板は反射率の低下が見られない。
ポリジメチルシロキサン樹脂(商品名IVSM4500:モメンティブ・パフォーマンス・マテリアルズ社製)にアナターゼ型酸化チタン(商品名A−950:堺化学工業株式会社製)とルチル型酸化チタン(商品名GTR−100;堺化学工業株式会社製)をそれぞれ100質量部添加し、加熱プレスにて、150℃で10分間の硬化条件によって反射層を形成し、縦70mm、横70mm、厚さ0.3mmのシリコーン白色反射板であるシリコーン樹脂製反射基材を作製した。それぞれの反射率を、分光光度計(商品名UV−3150;株式会社島津製作所製)を用いて初期反射率を測定した後、#1500のサンドペーパーでシリコーン白色反射板の表面をそれぞれ研磨し、再度反射率を測定する。その結果を示す図13より、研磨などで表面加工を行うことにより2〜3%反射率が向上した。
ポリジメチルシロキサン樹脂(商品名IVSM4500:モメンティブ・パフォーマンス・マテリアルズ社製)にシリコーン樹脂100質量部に対してルチル型酸化チタン(商品名GTR−100;堺化学工業株式会社製)を100質量部添加し、加熱プレスにて、25μmのポリイミドの支持体に150℃で10分間の硬化条件によって反射層を形成し、縦70mm、横70mm、厚さ50μmの白色のシリコーン樹脂製反射基材を作製した。
エポキシ樹脂100質量部に対してルチル型酸化チタン(商品名GTR−100;堺化学工業株式会社製)を100質量部添加したエポキシ樹脂組成物を用いたこと以外は、実施例4と同様にして、エポキシ樹脂白色反射シートを作製した。
支持体として、25μmのポリイミドフィルムに15μmの銅めっきを施した。これにフォトレジストを用いて、エッチング加工により回路を形成した。次に、アナターゼ型酸化チタンをシリコーン樹脂100質量部に対して150〜200質量部の範囲で配合を変え、必要によりシリコーンゴムパウダーを夫々適量ずつ加えてアナターゼ型酸化チタン含有白色反射材用の原材料組成物となし、これを回路の表面にLEDチップ及び配線を行う部分を除いて、スクリーン印刷を用いて30μmの厚みで塗布し、150℃×1時間加熱し、反射層を形成し、シリコーン樹脂製反射基材を作製した。このときシリコーン樹脂製反射基材は、反射層の硬度はJIS A型硬度計で80と、JIS D型硬度計で70の硬度とであった。
支持体として、25μmのポリイミドフィルムに15μmの銅めっきを施した。これにフォトレジストを用いて、エッチング加工により回路を形成した。回路の表面にLEDチップ及びその配線を行う銅めっき部分を含む全面に、アナターゼ型酸化チタンをシリコーン樹脂100質量部に対して150〜200質量部の範囲で配合を変え、必要によりシリコーンゴムパウダーを夫々適量加えてアナターゼ型酸化チタン含有白色反射材用の原材料組成物となし、これを、スクリーン印刷を用いて30μmの厚みで塗布し、150℃×1時間加熱し、反射層を形成した。このとき反射層の硬さはJIS D型硬度計で70の硬度を有していた。次いで、図7に示すように、銅めっきが露出するまで反射層を研削し、銅めっき部分とシリコーン樹脂部分とが区分けされたシリコーン樹脂製白色反射基材を作製した。
支持体として、25μmのポリイミドフィルムに15μmの銅めっきを施した。この銅めっきにフォトレジストを用いて、エッチング加工により回路を形成した。この回路の表面にLEDチップ及びその配線を行う部分を除いてポリイミドワニス(商品名;FC−114 ファイン・ポリイミドワニス:ファインケミカルジャパン社製)を2回塗りして加熱硬化し膜厚4μmのガスバリアー層を設けた。しかる後、実施例5と同様にしてシリコーン樹脂製白色反射基材(反射層の硬度は同値)を作製した。
シリコーン接着剤(商品名X−32−1964:信越化学工業株式会社製)にルチル型酸化チタン(商品名GTR−100;堺化学工業株式会社製)を100質量部添加しさらに反応抑制剤としてアセチレンアルコールを0.01部添加しシリコーン樹脂製反射基材に用いる液状の原材料組成物(粘度600Pa・s)を得た。この保存缶を開封後、室温において7日間放置し粘度を測定した結果変化が見られず、酸化チタンの沈降が見られず、150℃1時間の加熱硬化においても反射率、硬さとも初期の原材料組成物のものと同じ特性を示し、長期の保管性を示し、図1のようにLEDを実装でき、量産において生産性に優れていることが分かった。
一液型エポキシ樹脂性レジストインクにおいては、その保存缶の開封後、室温において24時間放置し確認した結果、外周が硬化し内部がゲル化し使用ができない状況であった。
チップオンフィルム(以下COFとする)として、厚さ38μmのポリイミドフィルムに厚さ8μmの導体(銅箔)に回路を形成し、ランドパターン部を除いてガスバリア層としてポリイミドワニス(商品名;FC−114 ファイン・ポリイミドワニス:ファインケミカルジャパン社製)を2回塗りして加熱硬化し膜厚4μmのガスバリアー層を設けたのち、スクリーン印刷により、ランドパターン部を除き白色無機フィラー含有原材料組成物を30μm塗布し、150℃×1時間で硬化させ、反射層を形成し、COFのシリコーン樹脂製反射基材を得た。白色無機フィラー含有原材料組成物はポリジメチルシロキサン樹脂(商品名IVSM4500:モメンティブ・パフォーマンス・マテリアルズ社製)100質量部にアナターゼ型酸化チタン(商品名A−950:堺化学工業株式会社製)とルチル型酸化チタン(商品名GTR−100;堺化学工業株式会社製)を80質量部添加したものである。このシリコーン樹脂製反射基材に日亜化学製白色LEDパッケージNSSW064を直接ランド部の上にマウントし、鉛フリーリフローに通しハンダを行い、高反射COF基板のフレキシブルLED照明基板を得た。この基板は厚みが薄く狭い箇所に挿入可能であり、熱による黄変がなく反射率98%のCOFとなった。また、金属と反射層との剥離も認めれなかった。
シリコーン樹脂原材料組成物を調製後、シロキシ基繰返単位を4〜10とする低分子量ポリシロキサンを300ppm未満になるまで、減圧下及び/又は200℃で維持した後、常圧に戻して用いたこと以外は、実施例1〜10と同様にして、シリコーン樹脂製反射基材を作製し、夫々LEDを実装してLED照明基板を製造したところ、電気接点障害、くもりの発生による照度低下などの現象は、認められなかった。
酸化チタンを、前記化学式(1)で示される反応性基含有ポリシロキサンをシランカップリング剤として浸漬し、表面処理したこと以外は、実施例1と同様にして、シリコーン樹脂製反射基材を作製したところ、表面処理しない場合よりも、前記表1で示す場合と同様に、樹脂製反射基材の曲げ強度と硬度とが、向上していた。
(実施例12)
実施例9と同様にして回路を形成した後、φ1mmに収まるランドパターン部を除いて酸化チタン含有ジメチルシリコーン樹脂原材料組成物をスクリーン印刷により塗布し、150℃×1時間で硬化させ、φ1mmの微細なランドパターンにダレることなく反射層を形成することができた。
実施例9と同様にして回路を形成した後、φ1mmに収まるランドパターン部を除いて酸化チタン含有ジメチルシリコーン樹脂原材料組成物をスクリーン印刷により塗布し、150℃×1時間で硬化させ、φ1mmの微細なランドパターンにダレることなく反射層を形成することができた。更に、サンドペーパー#1000を用い表面を研磨し、酸化チタン粉末を露出させた基板の反射率を測定したところ、3%の反射率向上が見られた。
実施例9と同様にして回路を形成した後、φ1mmに収まるランドパターン部を除いて無機白色フィラー粉末としてアナターゼ酸化チタンを100質量部、YAG蛍光体を3質量部含有させたジメチルシリコーン樹脂原材料組成物をスクリーン印刷により塗布し、150℃×1時間で硬化させ、φ1mmの微細なランドパターンにダレることなく反射層を形成することができた。サンドペーパー#1000を用い表面を研磨し、無機白色フィラー粉末を露出させた基板の反射率を測定したところ90%であった。400〜500nmの吸収が確認されその分反射率が低下したものの十分な反射率を維持できるとともに、550nmの励起光が確認された。
支持体として、25μmのポリイミドフィルムにプラズマ処理を行い、プライマー処理を行い反射層として、シリコーン樹脂100質量部に対してアルミナで表面処理を行ったアナターゼ型酸化チタン200質量部を配合し分散させ30μmの厚みで塗布し、その支持体の反対の面にはシリコーン粘着剤を30μmで塗工し、離型シートを積層し、150℃×1時間加熱し、反射層と粘着層を有したカバーレイフィルムを得た。このカバーレイフィルムを、回路を設けてあるFR−4基板にランドパターンを逃がすように穴を開け、位置を合わせて、貼り合わせた。
シリコーン樹脂原材料組成物を調製後、シロキシ基繰返単位を4〜10とする低分子量ポリシロキサンを300ppm未満になるまで、減圧下及び/又は200℃で維持した後、常圧に戻して用いたこと以外は、実施例1〜15と同様にして、シリコーン樹脂製反射基材を作製し、夫々LEDを実装してLED照明基板を製造したところ、何れも電気接点障害、くもりの発生による照度低下などの現象は、認められなかった。
酸化チタンを、前記化学式(1)で示される反応性基含有ポリシロキサンをシランカップリング剤として浸漬し、表面処理したこと以外は、実施例1と同様にして、シリコーン樹脂製反射基材を作製したところ、表面処理しない場合よりも、前記表1で示す場合と同様に、樹脂製反射基材の曲げ強度と硬度とが、向上していた。
チップオンボード(以下COBとする)として、ガラエポ基板(FR−4基板)に導体厚み8μm(銅箔)に回路を形成しランドパターン部を除き、ガスバリア層としてエポキシ樹脂でコーティングし150℃×4時間で硬化させたのち、スクリーン印刷により酸化チタン含有のシリコーン樹脂原材料組成物(シリコーン樹脂原材料組成物はポリジメチルシロキサン樹脂(商品名IVSM4500:モメンティブ・パフォーマンス・マテリアルズ社製)100質量部にアナターゼ型酸化チタン(商品名A−950:堺化学工業株式会社製)とルチル型酸化チタン(商品名GTR−100;堺化学工業株式会社製)を80質量部添加したもの)を塗布し、150℃×1時間で硬化させ、COFのシリコーン樹脂製反射層を有する反射基材を得た。そこに日亜化学製白色LEDパッケージNSSW064を直接フィルム上にマウントし、鉛フリーリフローに通しハンダを行い、高反射COB基板を得た。
製造例1と同様にしてCOBのシリコーン樹脂製反射層を有する基材を得た。そこにベアチップ(LED素子自体)を直接基板上のランドパターンに実装しワイヤー(金線)ボンディングし、シリコーン透明樹脂で封止を行い、ガラスエポキシLED照明基板を得た。この基板は熱による黄変もなく反射率98%のCOBとなった。
COBとしてBTレジン製基板(三菱ガス化学株式会社製)に導体厚み8μm(銅箔)を形成しランドパターン部を除き、ガスバリア層としてエポキシ樹脂を20μmコーティングし150℃×4時間で硬化させたのち、反射層をスクリーン印刷により塗布し、150℃×1時間で硬化させ、COBのシリコーン樹脂製反射層を有する基材を得た。そこにベアチップ(LED素子自体)を直接基板上のパターンに実装しワイヤー(金線)ボンディングしシリコーン透明樹脂で封止を行った。さらに、樹脂封止されたベアチップ周辺を囲むようにして反射枠として酸化チタン含有シリコーン樹脂原材料組成物をディスペンサーにより、高さ0.5mmで吐出したのち150℃×1時間で硬化させ厚物成形を行いシリコーン樹脂製反射枠付高反射COBを得た。
製造例1と同様にして回路を形成した後、φ1mmに収まるランドパターン部を除いて酸化チタン含有ジメチルシリコーン樹脂原材料組成物をスクリーン印刷により塗布し、150℃×1時間で硬化させ、φ1mmの微細なランドパターンにダレることなく反射層を形成することができた。
製造例1と同様にして回路を形成した後、φ1mmに収まるランドパターン部を除いて酸化チタンジメチルシリコーン樹脂原材料組成物をスクリーン印刷により塗布し、150℃×1時間で硬化させ、φ1mmの微細なランドパターンにダレることなく反射層を形成することができた。更に、サンドペーパー#1000を用い表面を研磨し、酸化チタン粉末を露出させた基板の反射率を測定したところ、3%の反射率向上が見られた。
製造例1と同様にして回路を形成した後、φ1mmに収まるランドパターン部を除いて無機白色フィラー粉末としてアナターゼ酸化チタンを100質量部、YAG蛍光体を3質量部含有させたジメチルシリコーン樹脂原材料組成物をスクリーン印刷により塗布し、150℃×1時間で硬化させ、φ1mmの微細なランドパターンにダレることなく反射層を形成することができた。サンドペーパー#1000を用い表面を研磨し、無機白色フィラー粉末を露出させた基板の反射率を測定したところ90%であった。400〜500nmの吸収が確認されその分反射率が低下したものの十分な反射率を維持できるとともに、550nmの励起光が確認された。
支持体として、25μmのポリイミドフィルムにプラズマ処理を行い、プライマー処理を行い反射層としてシリコーン樹脂100質量部に対してアルミナで表面処理を行ったアナターゼ型酸化チタン200質量部を配合し分散させ30μmの厚みで塗布し、その支持体の反対の面にはシリコーン粘着剤を10μmで塗工し、熱伝導層として、50μmのアルミ箔を積層し、更に粘着剤を10μmで塗工し離型シートを積層し、150℃×1時間加熱し、反射層と粘着層を有したカバーレイフィルムを得た。このカバーレイフィルムを、回路を設けてあるFR−4基板にランドパターンを逃がすように穴を開け、位置を合わせて、貼り合わせた。
実施例7と同様にシリコーン樹脂原材料組成物となし、これを25μmのポリイミドフィルムの支持体上の導電回路に半田付けしたベアチップの周りに最外直径3mmのケーシングとして、高さ1mmでドーナッツ状にポッティングして高反射枠を設け、チップ該当箇所を透明シリコーン樹脂で封止し、反射基材を作製した。この反射基材を曲率半径20mmに撓ませたが反射異常は起きなかった。このポッティングした箇所の硬度は、JIS D型硬度計により、ショアD硬度で70であった
Claims (27)
- 三次元架橋したシリコーン樹脂に、それよりも高屈折率の白色無機フィラー粉末が分散されつつ含有された反射層が、支持体上で膜状、立体状又は板状に形成されていることを特徴とするシリコーン樹脂製反射基材。
- 前記シリコーン樹脂が、非環状のジメチルシロキシ繰返単位を主成分として含んでいることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記シリコーン樹脂中に含まれる、シロキシ基繰返単位を4〜10とする低分子量ポリシロキサンが、最大でも300ppmであることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記反射層が、1〜2000μmの厚さで形成されていることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記シリコーン樹脂が、屈折率を1.35以上、1.65未満とすることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記白色無機フィラー粉末が、酸化チタン、アルミナ、硫酸バリウム、マグネシア、チッ化アルミニウム、チッ化ホウ素、チタン酸バリウム、カオリン、タルク、炭酸カルシウム、酸化亜鉛、シリカ、マイカ粉、粉末ガラス、粉末ニッケル及び粉末アルミニウムから選ばれる少なくとも1種の光反射剤であることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記白色無機フィラー粉末が、シランカップリング処理されてシリコーン樹脂中に分散されたものであることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記白色無機フィラー粉末が、アナターゼ型若しくはルチル型の前記酸化チタン、前記アルミナ、又は前記硫酸バリウムであることを特徴とする請求項6に記載のシリコーン樹脂製反射基材。
- 前記酸化チタンが、Al、Al2O3、ZnO、ZrO2、及び/又はSiO2で表面処理されて被覆されていることを特徴とする請求項8に記載のシリコーン樹脂製反射基材。
- 前記白色無機フィラー粉末が、平均粒径0.05〜50μmであって、前記シリコーン樹脂中に、2〜80質量%含有されていることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記反射層に、前記白色無機フィラー粉末と蛍光体とが分散されつつ含有されていることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記反射層の表面に、前記白色無機フィラー粉末と前記蛍光体との少なくとも何れかが露出していることを特徴とする請求項11に記載のシリコーン樹脂製反射基材。
- 前記反射層の表面が連続して、ナノメートル乃至マイクロメートルオーダーの凹凸形状、プリズム形状、及び/又は梨地面形状の何れかの非鏡面となっていることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記シリコーン樹脂の少なくとも一部の表面の研磨、粗面化、ざらついた金型による金型成形若しくはスタンプ成形、及び/又はケミカルエッチングによって、前記白色無機フィラー粉末の一部が、前記表面から露出していることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 導電パターンの付された前記支持体を覆う前記反射層が研磨され、前記導電パターンが露出していることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 前記表面の上に、金属膜が付されていることを特徴とする請求項15に記載のシリコーン樹脂製反射基材。
- 前記金属膜が、銅、銀、金、ニッケル、及びパラジウムから選ばれる少なくとも何れかの金属で形成されていることを特徴とする請求項16に記載のシリコーン樹脂製反射基材。
- 前記金属膜が、めっき被膜、金属蒸着被膜、金属溶射膜、又は接着された金属箔膜であることを特徴とする請求項16に記載のシリコーン樹脂製反射基材。
- 発光素子、発光装置及び光電変換素子の何れかの背面、外周及び/又は導光材反射面に、配置されていることを特徴とする請求項1に記載のシリコーン樹脂製反射基材。
- 三次元架橋したシリコーン樹脂へと重合させる重合性シリコーン樹脂原材料に、前記シリコーン樹脂よりも高屈折率の白色無機フィラー粉末を分散させて原材料組成物とした後、前記原材料組成物を膜状に支持体上に付し、三次元架橋させて前記シリコーン樹脂へ重合させることにより、反射層を前記支持体上で膜状、立体状又は板状に形成することを特徴とするシリコーン樹脂製反射基材の製造方法。
- 前記重合が、加湿、加圧及び紫外線照射の少なくとも何れかにより、なされることを特徴とする請求項20に記載のシリコーン樹脂製反射基材の製造方法。
- 前記重合が、金型内での射出成形、又は金型での押圧成形の際加熱及び/又は加圧により、なされることを特徴とする請求項20に記載のシリコーン樹脂製反射基材の製造方法。
- 前記金型の表面が、フッ素樹脂でコーティングされていることを特徴とする請求項22に記載のシリコーン樹脂製反射基材の製造方法。
- 前記重合性シリコーン樹脂原材料に、前記シリコーン樹脂への三次元架橋の架橋剤と、加熱によって失活又は揮発する反応抑制剤とが、分散して含有されており、前記シリコーン樹脂よりも高屈折率の白色無機フィラー粉末を分散させて、前記原材料組成物となした後、前記加熱によって前記重合がなされることを特徴とする請求項20に記載のシリコーン樹脂製反射基材の製造方法。
- 重合性シリコーン樹脂の原材料と、前記シリコーン樹脂の原材料を三次元架橋させる架橋剤と、前記シリコーン樹脂よりも高屈折率の白色無機フィラー粉末とが含まれた液状又は塑性の原材料組成物であって、請求項1に記載のシリコーン樹脂製反射基材を形成するために用いられる原材料組成物。
- 加熱によって失活又は揮発する反応抑制剤が含まれていることを特徴とする請求項25に記載の原材料組成物。
- 粘度調整のための有機溶剤及び/又は反応性希釈剤が含まれていることを特徴とする請求項25に記載の原材料組成物。
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JPWO2011118109A1 (ja) | 2013-07-04 |
WO2011118109A1 (ja) | 2011-09-29 |
EP2551929A4 (en) | 2013-08-14 |
US11326065B2 (en) | 2022-05-10 |
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CN106025053B (zh) | 2020-01-10 |
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WO2011118108A1 (ja) | 2011-09-29 |
HK1179048A1 (zh) | 2013-09-19 |
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